28results about How to "Reduce square resistance" patented technology

The invention discloses a conductive glass fiber cloth, which comprises a glass fiber base cloth and a carbonized conductive layer formed on the glass fiber base cloth, and the carbonized conductive layer is obtained by coating conductive ink and calcining, the conductive ink is prepared from the following components in parts by weight: 10 to 30 parts of low-melting-point glass powder, 3 to 5 parts of graphene, 0.5 to 2 parts of single-walled carbon nanotubes, 0.1 to 0.5 part of conductive carbon black, 5 to 10 parts of resin, 0.1 to 0.3 part of dispersing agent, 0.01 to 0.03 part of anti-settling thixotropic agent, 0.01 to 0.05 part of silane coupling agent, 70 to 90 parts of water and 5 to 20 parts of ethanol. The conductive glass fiber cloth is high in sheet resistance stability, good in coating adhesion fastness, excellent in impact resistance and suitable for conductive functionalization of thin glass fiber cloth.

The invention relates to the technical field of conductive silver paste, and discloses high-thixotropy conductive silver paste and a preparation method thereof. The prepared conductive silver paste is prepared by taking spherical silver powder and modified flake silver powder as a conductive phase and glass powder as an inorganic binding phase, and adding an organic carrier, mixing and stirring. Compared with the flake silver powder, the modified flake silver powder has better conductivity, and has better and more stable dispersity in a matrix; the modified polyurea and the hydroxy acrylic resin are introduced into the organic carrier, and the thixotropy and the adhesive force of the silver paste are improved through the synergistic effect of the modified polyurea and the hydroxy acrylic resin. Therefore, the conductive silver paste has good application prospects in the fields of electronic products, solar cells and the like.

The invention belongs to the technical field of heterojunction bipolar transistors, and particularly relates to a heterojunction bipolar transistor and an MOCVD epitaxial growth method thereof. The heterojunction bipolar transistor provided by the invention comprises a transition layer arranged between a base region and an emission layer, and the MOCVD epitaxial growth method comprises the step of growing the transition layer on the surface of the base region by adopting a linear variable-temperature staged pulse metal organic chemical vapor deposition method, pH3 is continuously introduced within the total growth time of the linear variable-temperature staged pulse metal organic chemical vapor deposition method, and trimethyl indium, trimethyl gallium and silane are introduced in a single-cycle staged pulse manner; and the temperature of the reaction chamber is linearly increased from the base region growth temperature to the emission layer growth temperature within the time from the T1 initial moment to the TN initial moment. The heterojunction bipolar transistor obtained by the method provided by the invention is large in gain, low in sheet resistance and good in reliability.

The invention discloses a preparation method of a solar cell, the solar cell and a photovoltaic module, and the preparation method comprises the following steps: providing a cell piece, and arranging a transparent conductive layer on a light receiving surface and / or a backlight surface of the cell piece; performing microwave treatment on the transparent conductive layer on the light receiving surface and / or the backlight surface; and preparing an electrode on the surface of the transparent conductive layer. According to the invention, microwave processing is carried out on the transparent conductive layer in the cell, so that the mobility of the transparent conductive layer can be improved, the sheet resistance of the transparent conductive layer can be reduced, the contact resistivity between the transparent conductive layer and the electrode can be reduced, the series resistance of the cell is reduced, the filling factor value is improved, and finally the purpose of improving the cell efficiency is achieved.

According to the solar cell piece and the preparation method thereof, an emitting electrode is formed on the front face of the solar cell piece, and the doping degree of the emitting electrode in the edge area of the front face is larger than the doping degree of the emitting electrode in the middle area of the front face. By improving the doping degree of the edge area, the square resistance of the edge of the silicon wafer is reduced, the edge area is easier to react with the glass powder in the grid line slurry, and the influence of aluminum oxide formed by winding plating on the front surface when aluminum oxide is deposited on the back surface on the contact of the grid line slurry and the silicon wafer can be relatively reduced or compensated; and the edge EL reject ratio of the solar cell is reduced.

This invention belongs to the field of transparent conductive film technology, specifically relating to a flexible transparent conductive film with ordered silver nanowires and its preparation method. The preparation method includes the following steps: preparing AgNW conductive ink; coating a first layer of silver nanowires onto a substrate surface, and drying the resulting monolayer silver nanowire wet film; coating a second layer of silver nanowires onto the surface of the monolayer silver nanowire film along a coating direction perpendicular to the first coating; drying the resulting bilayer orthogonal silver nanowire wet film and then cold rolling it to obtain a flexible transparent conductive film with ordered silver nanowires. This flexible transparent conductive film with silver nanowires exhibits high light transmittance, low sheet resistance, and low surface roughness.

The invention discloses a transparent conductive electrode, a preparation method thereof and a semiconductor device applying the transparent conductive electrode, a metal wire layer is arranged on the surface of a transparent conductive layer or in at least part of the transparent conductive layer, and the metal wire layer comprises a plurality of metal wires, so that the surface resistance of the transparent conductive layer can be reduced, and the conductivity of the transparent conductive layer is improved. The conductivity of the whole formed by the transparent conducting layer and the metal wire layer is improved, and the transparency of the whole formed by the transparent conducting layer and the metal wire layer is kept to a great extent. Moreover, the transparent conductive layer is arranged to expose at least part of the metal wire layer, so that the transparent conductive layer is flat and not easy to break, particularly, the protective layer is arranged on the surface of the metal wire layer exposed on the transparent conductive layer, and the protective layer is made of metal oxide in the metal wire layer. The whole body formed by the transparent conductive layer and the metal wire layer also keeps good chemical / electrochemical inertness, and the stability of the transparent conductive electrode is improved.

The application provides a glass-based circuit board and a preparation method thereof, and the preparation method comprises the following steps: S1, preparing a conductive paste, wherein the conductive paste comprises a conductive metal and an organic binder; S2, applying the conductive paste on a glass substrate by printing; and S3, sintering the glass substrate coated with the conductive paste by laser to obtain the glass-based circuit board. The preparation method of the glass-based circuit board provided by the application forms a transient high temperature on the surface of the glass in a very short time by laser sintering based on the characteristics of the glass substrate and the conductive paste, which does not damage the strength of the glass substrate itself, and can completely sinter and solidify the ink, so that the conductive circuit and the glass substrate become an integrated structure, the adhesion between the conductive circuit and the glass substrate is improved, meanwhile, only metal conductive particles are left in the conductive circuit layer, the conductivity of the conductive circuit layer can be greatly improved, and the square resistance is reduced.

The utility model relates to nanometer silver wire technical field, specifically related to a kind of compression device for improving nanometer silver wire lap joint, the inside one side of bearing frame and the one side of bottom plate are rotatably connected with several rotating rods, and all rotating rods are all sleeved with compression sleeve, and the rotating rod of bearing frame inside and the rotating rod of bottom plate one side are one-to-one corresponding distribution, the top of frame body is fixedly connected with top plate, and the top side of top plate is fixedly connected with hydraulic oil cylinder by bolt, by introducing material surface cleaning function, compression gap hydraulic adjusting mechanism and multi-specification material adaptation structure, the defects of existing compression equipment in cleaning ability insufficient, adjusting flexibility poor and the like are successfully overcome, and the compression quality and product consistency of nanometer silver wire conductive film are significantly improved.

The invention belongs to the technical field of flexible electronic materials, and particularly relates to a multi-layer composite transparent electrode for a flexible substrate and a preparation method of the multi-layer composite transparent electrode. The electrode sequentially comprises a stress buffer layer, a transparent core layer and an interface optimization layer from the surface of the flexible substrate; the stress buffer layer is zinc oxide-tin oxide composite nanoparticles grafted with a silane coupling agent; the transparent core layer is a silver nanowire network of which the surface is coated with a tin-doped indium oxide shell layer; and the interface optimization layer is a molybdenum oxide and tungsten oxide blended film formed by controlling oxygen partial pressure. Through combination of multilayer material design and a low-temperature preparation process, the electrode has the characteristics of high light transmittance, low sheet resistance, excellent bending resistance, strong interface adhesion and high work function, and is suitable for flexible display and wearable electronic devices.

The utility model discloses a kind of coating equipment, the coating equipment is used to form buffer layer on the electron transport layer of perovskite solar cell, the coating equipment includes: ALD device, with ALD reaction cavity, when the perovskite solar cell passes through the ALD reaction cavity along X axis direction, the ALD device forms first buffer layer on the electron transport layer along Y axis positive direction;RPD device, with RPD reaction cavity, when the perovskite solar cell passes through the RPD reaction cavity along X axis direction, the RPD device forms second buffer layer on the electron transport layer along Y axis reverse direction;Turnover device, between the ALD device and the RPD device, when the perovskite solar cell passes through the turnover device, the turnover device overturns 180 degrees the perovskite solar cell.The coating equipment of the utility model can realize the preparation of buffer layer of low damage, high transmittance, low square resistance and high carrier mobility.

The application relates to the technical field of conductive glass preparation, in particular to high-performance ITO conductive glass and a preparation method thereof. The high-performance ITO conductive glass comprises, from top to bottom, a porous ITO film, an ITO film, an aluminum oxide film I, a glass substrate, an aluminum oxide film II, a niobium oxide film and a silicon dioxide film. The application innovatively prepares a porous ITO film on the surface of the ITO film, the porous structure in the porous ITO film can greatly reduce the scattering of light, and the light transmittance of the conductive glass is improved. Meanwhile, the porous ITO film has conductivity, and the carriers in the ITO film can be transmitted to the surface of the porous ITO film, so that the low square resistance of the ITO conductive glass is ensured, and the problem that the high light transmittance and the low square resistance of the ITO conductive glass cannot be simultaneously achieved is solved.

The invention discloses a multi-layer current collector with a latticed active region and a preparation method thereof, and the method comprises the following steps: carrying out the evaporation of two side surfaces of a base material belt, and forming a first metal layer; roll welding is carried out on the middle area of the base material belt after the first metal layer is evaporated, so that the metal layers on the two faces of the middle area of the base material belt are riveted; rolling the middle area of the base material strip subjected to roll welding; and respectively carrying out evaporation on the surfaces of the two sides of the base material belt again to form a second metal layer. Metal layers on the front side and the back side of the base material form a riveting connection mode, then the thickness of the metal layers is increased through secondary evaporation, and metal is deposited at the light-transmitting positions of the metal layers to form secondary riveting. The middle part of the prepared multi-layer current collector is the metal riveted latticed active region, so that the metal layer can be obviously prevented from falling off from the polymer layer.

The invention provides a method for carrying out boron diffusion on monocrystalline silicon, which comprises the following steps: carrying out pretreatment on monocrystalline silicon, and growing a boron-loving thin film layer to obtain monocrystalline silicon of which the surface is a boron-loving thin film layer; reacting the monocrystalline silicon with the boron-loving thin film layer on the surface in the presence of oxygen and a boron source to obtain a B2O3 thin film layer covering the boron-loving thin film layer; the method comprises the following steps: carrying out a first boron diffusion reaction on monocrystalline silicon subjected to two times of film layer growth under an oxygen-free condition, carrying out cooling and film removal, carrying out a second boron diffusion reaction in the presence of oxygen, and carrying out a boron elimination reaction on the monocrystalline silicon under nitrogen and hydrogen conditions to obtain the boron-diffused monocrystalline silicon. According to the invention, the boron-loving thin film layer and the hydrogen-assisted propulsion technology are utilized, a deep PN junction and a high-sheet-resistance boron diffusion effect are realized under the condition that the temperature does not exceed 940 DEG C, the damage of high temperature to the silicon wafer body is effectively avoided, the conversion efficiency of the solar cell is improved, and convenience is provided for subsequent production of the solar cell with a complex structure.

The invention relates to the technical field of semiconductor devices, in particular to a diamond and gallium nitride heterogeneous integrated complementary field effect transistor device. The device comprises an n-type GaN-based transistor unit (001), a p-type diamond-based transistor unit (002), an electrode connecting unit (003) and a diamond substrate (1), and the n-type GaN-based transistor unit (001) and the p-type diamond-based transistor unit (002) are both arranged on the diamond substrate (1). The first electrode connection metal (15a) is connected to the n-type GaN transistor gate electrode (8) and the p-type diamond transistor gate electrode (13), respectively, and the second electrode connection metal (15b) is connected to the n-type GaN transistor drain electrode (9) and the p-type diamond transistor source electrode (12), respectively. The complementary field effect transistor has the advantages of being wide in forbidden band width and low in inter-band tunneling probability, and the formed complementary field effect transistor has the advantages of being high in switching speed and low in power consumption.

This invention discloses a tungsten-copper electronic paste for medium-temperature co-fired ceramic substrates and its preparation method, belonging to the field of electronic pastes. By mass percentage, the paste consists of 80%–85% tungsten-copper powder, 5%–15% organic carrier, and 5%–10% binder phase. The preparation method includes: first preparing the organic carrier, then uniformly mixing the tungsten-copper powder and binder phase, followed by adding the organic carrier, and then thoroughly grinding and dispersing the mixture using a stirring and three-roll mill to obtain a uniform and stable tungsten-copper electronic paste. This invention, by optimizing the powder size and paste ratio, significantly reduces the sheet resistance of the conductive layer after sintering and improves conductivity while ensuring good co-firing compatibility with medium-temperature co-fired ceramics. The resulting paste exhibits excellent printability and rheological stability, with clear printed lines and a smooth surface. It shows no bubbling or delamination during sintering and is suitable for high-performance, high-reliability electronic packaging and substrate circuit manufacturing.

This invention relates to a conductive silver paste-specific glass powder for automotive rear window defroster lines, its preparation method, and its application. The glass powder comprises the following components in the indicated mass ratios: Bi₂O₃: 45-65%, SiO₂: 15-30%, B₂O₃: 5-12%, Al₂O₃: 1-5%, K₂O: 2-8%, Li₂O: 1-5%, CaO: 0.5-3%, and Sb₂O₃: 0.5-3%. It is processed according to the following steps: raw material selection, pretreatment, precise mixing, high-temperature melting, rapid water quenching, fine processing, and grading. Compared with existing technologies, this invention has advantages such as adaptability to high-temperature short-time sintering, high acid resistance, low sheet resistance, high welding strength, and high adhesion.

The application relates to the field of semiconductor photoelectric devices, and particularly discloses a light-emitting diode chip and a preparation method thereof. The preparation method comprises the following steps: S1, providing a substrate; S2, forming an epitaxial layer on the substrate; the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked on the substrate; S3, forming a bare area exposing the first semiconductor layer on the epitaxial layer; S4, forming a first ITO layer on the second semiconductor layer and adopting plasma bombardment treatment generated by N2O ionization to obtain a first transparent conductive layer; S5, forming a second ITO layer on the first transparent conductive layer and adopting plasma bombardment treatment generated by Ar ionization to obtain a second transparent conductive layer; S6, annealing the first transparent conductive layer and the second transparent conductive layer; and S7, forming a second electrode and a first electrode. According to the application, the brightness can be improved and the working voltage can be reduced.

The application provides a platinum thin film and a manufacturing method thereof, and the manufacturing method comprises the following steps: performing chemical mechanical polishing treatment on a ceramic substrate by using a polishing liquid to obtain a ceramic substrate with a predetermined roughness; depositing a platinum thin film on the ceramic substrate by using a magnetron sputtering method at a predetermined substrate temperature; and performing annealing treatment on the platinum thin film. The platinum thin film prepared by using the chemical mechanical polishing treatment and the multiple sputtering method has the advantages of thin thickness, low square resistance, high uniformity and low cost, and the electrical performance of the platinum thin film with thin thickness is equivalent to that of a thick film, the production cost is reduced while the good performance is ensured. Therefore, when the platinum thin film is applied to a resistance temperature sensor, the resistance temperature sensor can not only meet the requirement of accurate measurement of the environmental temperature of the resistance temperature sensor product, but also reduce the production cost of the resistance temperature sensor and improve the production efficiency.

The invention discloses low-temperature-coefficient copper paste for a high-power device and a manufacturing method thereof, and belongs to the field of electronic paste. The copper paste comprises the following components in percentage by weight: 40wt%-80wt% of copper powder, 0.5 wt%-10wt% of glass powder, 0.05 wt%-5wt% of oxide additive and 15wt%-50wt% of organic carrier, wherein the organic carrier comprises organic resin and an organic solvent. The preparation method comprises the following steps: weighing the components, uniformly mixing the components, and grinding until the average particle size of the copper powder is D50 (0.5-20 microns), the fineness of the tested slurry is less than or equal to 30 microns, and the viscosity range is 80-300 Pa.s, thereby obtaining the copper slurry of the corresponding embodiment. The problems that the temperature coefficient of existing copper paste is high, the accumulated heat effect of a device is remarkably increased under the high-power working condition, the device loses efficacy, and the reliability is reduced are solved. The method is widely applied to the technical field of wiring of low-thermal-resistance high-power component substrates and high-current wires.

This invention relates to the field of perovskite solar cell technology, specifically to a composite electrode layer, its preparation method, and a perovskite solar cell. The composite electrode layer of this invention includes a fluid-conducting layer and a transparent conductive layer. The fluid-conducting layer is located on one side surface of a glass substrate, and the transparent conductive layer covers both the fluid-conducting layer and the surface of the glass substrate. The fluid-conducting layer includes multiple arrayed metal wires. Along the length direction of the metal wires, any two adjacent metal wires form a accommodating region for the P1 channel of the perovskite solar cell. In the direction perpendicular to the length of the metal wires, the metal wires are spaced apart and form multiple carrier concentration and conduction regions on the transparent conductive layer. The composite electrode layer of this invention can be firmly fixed to the surface of the glass substrate, reducing the thickness of the transparent conductive layer, increasing the transmittance of the film layer, reducing the sheet resistance of the cell, and further improving the conversion efficiency of the perovskite solar cell.

The invention discloses a preparation method of a dielectric film surface titanium oxide nano composite metal electrode for a capacitor. A thermal evaporation method is adopted, metal titanium is used as an evaporation raw material, a continuous nano functional layer with chemical components close to those of titanium oxide can be deposited on a BOPP film under a non-vacuum condition, and the threshold thickness of a pure aluminum electrode can be reduced. On the premise of the same electrode thickness, the through-current capability of the metallized electrode is improved, and the adhesive force and the self-healing performance of the metal layer are obviously improved. Due to the high thermal conductivity and the high melting point of the titanium oxide functional layer, the lost electrode area of the composite electrode in a self-healing performance test is smaller, the composite electrode has the unique isolation self-healing characteristic, and capacitance loss caused by the self-healing process is reduced. Based on a traditional preparation method of vacuum evaporation of a capacitor manufacturer, the investment of pretreatment and other preparation cost is reduced, and the feasibility of the method applied to batch preparation is improved.

The present invention provides a lightly doped substrate, a substrate with a selective emitter, a solar cell and a preparation method and application thereof. The lightly doped substrate comprises a P-type silicon wafer layer, an N-type silicon layer, a first phosphorus silicon glass layer, an oxide layer and a second phosphorus silicon glass layer which are connected in sequence. In the subsequent heavy doping process, the lightly doped substrate of the present invention can increase the doping uniformity of the doping source on the surface of the silicon wafer on the one hand, and can reduce the square resistance of the heavily doped area on the other hand, thereby reducing the silver silicon contact resistance. The preparation method of the lightly doped substrate is simple, easy to implement and suitable for large-scale industrial production and application. The heavily doped area in the substrate with a selective emitter prepared by the lightly doped substrate has a high phosphorus content, a low and uniform square resistance of the heavily doped area, and a high light conversion efficiency.

The application provides an air atmosphere near-infrared laser sinterable oxidation-resistant copper paste and a preparation method thereof, and the main body of the paste is Cu@glass, which comprises a copper core, and a Bi2O3-B2O3-ZnO glass shell layer with a mass fraction of 5%-20% coated outside the copper core, and the particle size of the copper core is 200 nm-500 nm. The copper paste prepared by using the Cu@glass material greatly improves the near-infrared laser absorption efficiency and oxidation resistance of the Cu@glass particles under the coating structure of the glass shell, and the initial oxidation temperature and the near-infrared light absorption rate of the 10% glass-coated Cu@glass particles are 294 DEG C and 61.8% respectively, so that the stable necking and densification of the copper paste under the irradiation of the near-infrared laser are realized under the condition of the air atmosphere, and a copper conductor film layer with conductivity is obtained.

The invention discloses an activation and surface protection method for ion implantation SiC, and relates to the technical field of semiconductor manufacturing. Comprising the following steps: performing high-temperature ion implantation on a SiC wafer; pVD carbon film plating is carried out on the SiC wafer after high-temperature ion implantation; performing laser activation annealing on the SiC wafer plated with the carbon film; performing plasma physical etching on the annealed SiC wafer; carrying out sacrificial oxide layer treatment on the SiC wafer subjected to plasma physical etching; and carrying out BOE solution wet etching on the SiC wafer after sacrificial oxide layer treatment to obtain the SiC device. According to the method, through high-temperature ion implantation and laser annealing treatment and by adopting a multi-step carbon film removal process, the ion implantation impurity activation efficiency is remarkably improved, meanwhile, the morphology of the device is guaranteed, and the performance of the device is improved. The method has the advantages of simple process, high activation efficiency, good repeatability and the like, and is suitable for manufacturing SiC-based power semiconductor devices.

The application discloses a low-temperature conductive silver paste and a preparation method thereof, and relates to the technical field of conductive silver paste.The application takes two-dimensional silver nanosheets as a main body, and makes one-dimensional carbon nanotubes overlap and interpenetrate in the surface and gaps of the two-dimensional silver nanosheets through an evaporation self-assembly technology to form a silver nanosheet reinforcer.The carbon nanotubes have higher conductivity, can fill the gaps of the silver nanosheets, and can improve the conductivity of the silver paste; subsequently, the silver nanosheet reinforcer is compounded with silver nanoparticles to form a composite conductive filler, and the composite conductive filler is surface-modified by using 3,4-dimethoxyphenethylamine.The amino group on the 3,4-dimethoxyphenethylamine molecule can be adsorbed on the surface of the composite conductive filler through coordination, and the existence of benzene rings and methoxy groups increases the steric hindrance between the fillers, effectively improves the dispersion stability, and simultaneously, the strengthening of the uniformity of the conductive network further enhances the conductive performance of the conductive silver paste.The conductive silver paste prepared by the application has the effects of high conductivity and stability.

The invention belongs to the technical field of silver powder preparation, and particularly discloses silver powder with low silver content and a preparation method and application thereof. The silver powder preparation method comprises the following steps that S1, a reaction system containing silver ions or silver complexes is prepared, a dispersing agent and a surfactant are added into the reaction system, and stirring and mixing are conducted; s2, adding a reducing agent solution, stirring, mixing and reacting, and adding a coating agent; s3, centrifuging to obtain a solid, drying and crushing to obtain silver powder; wherein the surface active agent comprises an ionic surface active agent and a non-ionic surface active agent. The silver powder prepared through the method has an appropriate particle size range, low silver content, relatively low grain size and curing degree and high sintering activity, can be used for low-temperature rapid sintering, and has good application prospects in the field of manufacturing of electronic components.

The invention discloses a silver / silver chloride slurry for a CGM biosensor reference electrode and a preparation method and application thereof. The silver / silver chloride slurry comprises the following components by weight: 5-10 parts of a polymer resin, 8-12 parts of an organic solvent, 1-2 parts of a dispersant, 1-2 parts of a curing agent, 10-40 parts of silver chloride particles with a surface modifier, and 40-70 parts of silver powder; the silver powder has a flake powder particle size of 0.3-20um, a ball powder particle size of 0.1-10um, and a dendritic powder particle size of 0.5-15um; the silver chloride particles with a surface modifier have a particle size of 0.1-5um and a surface modifier content of 0.1-3% by weight. The silver / silver chloride slurry for a CGM biosensor reference electrode provided by the invention is particularly suitable for a stainless steel substrate, and the prepared reference electrode has the advantages of excellent adhesion, good bending resistance, low square resistance, good biocompatibility, excellent electrode stability, and the like.