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7631 results about "Controllability" patented technology

Controllability is an important property of a control system, and the controllability property plays a crucial role in many control problems, such as stabilization of unstable systems by feedback, or optimal control.

Technology for processing high-concentration organic wastewater in composite electrochemical method

The invention relates to a technology for processing high-concentration organic wastewater in a composite electrochemical method, which comprises the main four steps of: pH adjustment, multidimensional electrocatalytic oxidization processing, micro coupling electric fenton reaction oxidation processing and coagulating sedimentation processing. The invention has the technical advantage that the technology has good breaking, chain scission, degradation effects to benzene ring organics, heterocyclic organics, polycyclic organics, macromolecule organics and sustaining organics, which have the most difficulty to degradation. Besides, the technology has no obvious selection to various kinds of high-concentration organic wastewater, has broad-spectrum processing effect, and is an effective measurement for pre-processing to high-concentration organic wastewater having difficulty to degradation. The invention is characterized in that the technology uses second-grade electrochemical processing equipment to realize third-grade advanced oxidation combination processing, effectively utilizes H2O2 and Fe2+ generated by the second-grade electrochemical processing equipment, and makes fenton oxidated and coupled in a micro reactor. During the technological processes, the oxidation capacity is strong to weak, and has reasonable distribution. The pH valve of wastewater does not need repeatedly adjusting. The invention has the obvious characteristics of low electric consumption, little medicine consumption, high processing efficiency, and good controllability.

Multi-shell-layer metal oxide hollow ball and preparation method thereof

The invention provides a multi-shell-layer metal oxide hollow ball and a preparation method thereof. A hydrothermal method is used for preparing a carbon ball template; metal salts are dissolved in carbon ball suspension liquid, and the gradient distribution, the depth and the number of metal salts entering carbon balls are controlled through regulating adsorption conditions such as metal salt concentration, solution pH value, soaking temperature and time and the like; and the heat treatment is carried out on the carbon balls adsorbing metal ions, and the multi-shell-layer metal oxide hollow ball can be obtained. The shell-layer of the hollow ball prepared by the method is formed by accumulating nanometer crystal particles of metal oxides, the shell layer number can be regulated and changed from two to four, and both the size of the hollow ball and the thickness of the shell layers are controllable. The method provided by the invention is simple and is easy to implement, the controllability is high, the pollution is little, the cost is low, and in addition, the general applicability is realized. The prepared product has a hollow structure and the shell layers with the thickness inthe nanometer level, simultaneously, the internal space can be effectively utilized through the multilayer structure, and the multi-shell-layer metal oxide hollow ball is applied to gas sensitivity and photocatalysis and has the more excellent performance through being compared with the traditional nanometer material and a single-layer hollow ball.

Public protocol Internet of things platform and device access method

ActiveCN109587228AImplement two-way authenticationRealize associationTransmissionAccess methodTransmission channel
The invention discloses a public protocol Internet of things platform and a device access method. The public protocol Internet of things platform uses eMQTT message-oriented middleware based on an MQTT communication protocol, the EMQTT message-oriented middleware is deployed on server nodes in a cluster mode, and message synchronization is maintained among the server nodes. A database, a Redis database and an HTTPS protocol message access interface are also included. The HTTPS protocol message access interface adapts an HTTPS request to an MQTT protocol. The server nodes are deployed with a load balancing service, a device access service, a device management service, and a theme authority management service. Each service carries out communication through an RESTful API interface. By usingthe public protocol Internet of things platform and the device access method, the bidirectional authentication between a device end and a server side is realized, and the association between a certificate user and the theme authority of publishing subscription is also realized. At the same time, adaption to the MQTT protocol is implemented, and the controllability of a device access authority anda data transmission authority, and the safety of a data encryption transmission channel are ensured.

Mesa-type bipolar transistor

In conventional mesa-type npn bipolar transistors, the improvement of a current gain and the miniaturization of the transistor have been unachievable simultaneously as a result of a trade-off being present between lateral diffusion and recombination of the electrons which have been injected from an emitter layer into a base layer, and a high-density base contact region—emitter mesa distance. In contrast to the above, the present invention is provided as follows:
    • The gradient of acceptor density in the depth direction of a base layer is greater at the edge of an emitter layer than at the edge of a collector layer. Also, the distance between a first mesa structure including the emitter layer and the base layer, and a second mesa structure including the base layer and the collector layer, is controlled to range from 3 μm to 9 μm. In addition, in order for the above to be implemented with high controllability, the base layer is formed of a first p-type base layer having an acceptor of uniform density, and a second p-type base layer whose density is greater than the uniform acceptor density of the first base layer while having a gradient in the depth direction of the second base layer. These features produce the advantageous effect that it is possible to provide a high-temperature adaptable, power-switching bipolar transistor that ensures a current gain high enough for practical use and is suitable for miniaturization.
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