4428 results about "Organic semiconductor" patented technology

In one embodiment of the invention, a method of manufacturing a semiconductor device comprises the steps of: a) providing an organic semiconductor layer; b) depositing a reactive species on a portion of the organic semiconductor layer; and c) reacting the reactive species with the portion of the organic layer to form a dielectric layer.

The invention relates to the use of an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof. In order to be able to handle organic semiconductors more easily in the production process and to be able to produce electronic components with doped organic semiconductors more reproducibly, a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative may be used as a mesomeric compound, which under like evaporation conditions has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).

A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10-3 cm2 / Vs and a conductivity less than about 10-6 S / cm at 20 DEG C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.

The invention provides a display device in which parasitic capacitance associated with data lines and driving circuits is prevented using a bank layer whose primary purpose is to define areas on a substrate in which an organic semiconductor film is formed. When the organic semiconductor film for forming a luminescent element such as an electroluminescent element or an LED is formed is formed in pixel regions (7), the organic semiconductor film is formed in the areas surrounded by the bank layer (bank) formed of a black resist. The bank layer (bank) is also formed between an opposite electrode (op) and data lines (sig) for supplying an image signal to first TFTs (20) and holding capacitors (cap) in the pixel regions (7) thereby preventing parasitic capacitance associated with the data lines (sig).

A field effect transistor in which a continuous semiconductor layer comprises:a) an organic semiconductor; and,b) an organic binder which has an inherent conductivity of less than 10−6Scm−1 and a permittivity at 1,000 Hz of less than 3.3and a process for its production comprising:coating a substrate with a liquid layer which comprises the organic semiconductor and a material capable of reacting to form the binder; and,converting the liquid layer to a solid layer comprising the semiconductor and the binder by reacting the material to form the binder.

Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

In an active matrix display device, each pixel is provided with a pixel electrode, an organic semiconductor film deposited on the upper layer side of the pixel electrode, and a thin film luminescent element provided with an opposing electrode formed on the upper layer side of the organic semiconductor film. A protective film covering almost the entire surface of a substrate is formed on the upper layer of the opposing electrode. The protective film prevents the entry of moisture or oxygen to inhibit the deterioration of the thin film luminescent element.

The present invention relates to square planar transition metal complexes and their use in organic semiconductive materials as well as in electronic or optoelectronic components.

By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.

The invention relates to a tactile or contactless user interface device (50), comprising organic semiconductor components (52) made by depositing organic conducting and semiconducting material in liquid form on a dielectric support (54).

A bioelectronic microchip formed on a substrate (16) includes a plurality of field effect transistors (10), each including first (12) and second (14) electrodes on the substrate; and a channel (18) extending between the first and second electrodes. An organic semiconducting material fills the channel (18); and a dielectric layer (20) formed atop the first and second electrodes and the channel. An electrolyte (22) to hold a probe molecule may be formed on the dielectric. A third electrode (24) in proximity with the first and second electrodes and isolated therefrom contacts the dielectric. Capture of target molecules may be detected at each transistor through changes in source to drain characteristics. The method provides high density and low cost sensors, particularly in diagonistic and drug discovery applications.

A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.

Solid state photosensitive devices including photovoltaic devices are provided which comprise a first electrode and a second electrode in superposed relation; and at least one isolated Light Harvesting Complex (LHC) between the electrodes. Preferred photosensitive devices comprise an electron transport layer formed of a first photoconductive organic semiconductor material, adjacent to the LHC, disposed between the first electrode and the LHC; and a hole transport layer formed of a second photoconductive organic semiconductor material, adjacent to the LHC, disposed between the second electrode and the LHC. Solid state photosensitive devices of the present invention may comprise at least one additional layer of photoconductive organic semiconductor material disposed between the first electrode and the electron transport layer; and at least one additional layer of photoconductive organic semiconductor material, disposed between the second electrode and the hole transport layer. Methods of generating photocurrent are provided which comprise exposing a photovoltaic device of the present invention to light. Electronic devices are provided which comprise a solid state photosensitive device of the present invention.

The present invention relates to use of an organic matrix material for producing an organic semiconductor material, characterized in that the organic matrix material is comprised at least partly of a spirobifluorene compound, and the glass transition temperature of the organic matrix material is at least 120° C. and the highest occupied molecular orbital (HOMO) of the matrix material is at a maximum energy level of 5.4 eV; and also to an organic semiconductor material and electronic component.

A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.

PCT No. PCT / JP98 / 00823 Sec. 371 Date Oct. 28, 1998 Sec. 102(e) Date Oct. 28, 1998 PCT Filed Feb. 27, 1998 PCT Pub. No. WO98 / 38660 PCT Pub. Date Sep. 3, 1998In a capacitor comprising a pair of electrodes and a dielectric substance intervening between the two electrodes, one of the electrodes is composed of sintered niobium nitride. Preferably, the dielectric substance is composed of niobium oxide and the electrode other than the electrode composed of sintered niobium nitride is composed of an ingredient selected from electrolytes, organic semiconductors and inorganic semiconductors. This capacitor has good environmental stability and good leak current characteristics.

There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

In a multilayer organic device (10) comprising a substrate bearing an anode (12) and a cathode (20), wherein located between the anode (12) and the cathode (20) is at least a first layer (16) comprising a first organic semiconductor material; and a second layer (18) over the first layer (16) comprising a second organic semiconductor material; the first organic semiconductor material is a polymer and the second organic material is a polymer or an oligomer, the average molecular weight of the first organic semiconductor material being higher than the average molecular weight of the second organic semiconductor material.

A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing the organic semiconductor layer to be aligned.

A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.

Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing the organic semiconductor layer to be aligned.

Improved environmental barrier coatings and improved organic semiconductor devices employing the improved environmental barrier coatings are disclosed herein. Methods of making and using the improved coatings and devices are also described. An improved environmental barrier coating generally includes a primary barrier layer, a secondary barrier layer disposed on the primary barrier layer, and a passivation layer disposed on the secondary barrier layer. The secondary barrier layer is formed using atomic layer deposition.

An organic semiconductive material comprising at least one matrix material and at least one doping material, wherein the doping material is selected from an organic compound and wherein the matrix material is selected from an diamine compound, also an organic component and a mixture for producing a doped semiconductor layer.

A light-receiving device comprises, on a substrate, a first light-receiving part for detecting light of a first wavelength range, and a second light-receiving part for detecting light of a second wavelength range. At least a part of incident light is transmitted through the first light-receiving part and then received by the second light-receiving part. The central wavelength of the first wavelength range is longer than the central wavelength of the second wavelength range, and the first light-receiving part is composed of an organic semiconductor having an absorption spectral maximum in the first wavelength range.

The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.

A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.

The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.