1800 results about "Organic semiconductor" patented technology

In one embodiment of the invention, a method of manufacturing a semiconductor device comprises the steps of: a) providing an organic semiconductor layer; b) depositing a reactive species on a portion of the organic semiconductor layer; and c) reacting the reactive species with the portion of the organic layer to form a dielectric layer.

The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof, to organic semiconductive materials and to electronic and optoelectronic components.

The invention provides a display device in which parasitic capacitance associated with data lines and driving circuits is prevented using a bank layer whose primary purpose is to define areas on a substrate in which an organic semiconductor film is formed. When the organic semiconductor film for forming a luminescent element such as an electroluminescent element or an LED is formed is formed in pixel regions (7), the organic semiconductor film is formed in the areas surrounded by the bank layer (bank) formed of a black resist. The bank layer (bank) is also formed between an opposite electrode (op) and data lines (sig) for supplying an image signal to first TFTs (20) and holding capacitors (cap) in the pixel regions (7) thereby preventing parasitic capacitance associated with the data lines (sig).

A field effect transistor in which a continuous semiconductor layer comprises:

• • a) an organic semiconductor; and,
  • b) an organic binder which has an inherent conductivity of less than 10⁻⁶Scm⁻¹ and a permittivity at 1,000 Hz of less than 3.3

and a process for its production comprising:

coating a substrate with a liquid layer which comprises the organic semiconductor and a material capable of reacting to form the binder; and,

converting the liquid layer to a solid layer comprising the semiconductor and the binder by reacting the material to form the binder.

In an active matrix display device, each pixel is provided with a pixel electrode, an organic semiconductor film deposited on the upper layer side of the pixel electrode, and a thin film luminescent element provided with an opposing electrode formed on the upper layer side of the organic semiconductor film. A protective film covering almost the entire surface of a substrate is formed on the upper layer of the opposing electrode. The protective film prevents the entry of moisture or oxygen to inhibit the deterioration of the thin film luminescent element.

The present invention relates to square planar transition metal complexes and their use in organic semiconductive materials as well as in electronic or optoelectronic components.

A bioelectronic microchip formed on a substrate (16) includes a plurality of field effect transistors (10), each including first (12) and second (14) electrodes on the substrate; and a channel (18) extending between the first and second electrodes. An organic semiconducting material fills the channel (18); and a dielectric layer (20) formed atop the first and second electrodes and the channel. An electrolyte (22) to hold a probe molecule may be formed on the dielectric. A third electrode (24) in proximity with the first and second electrodes and isolated therefrom contacts the dielectric. Capture of target molecules may be detected at each transistor through changes in source to drain characteristics. The method provides high density and low cost sensors, particularly in diagonistic and drug discovery applications.

A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.

Solid state photosensitive devices including photovoltaic devices are provided which comprise a first electrode and a second electrode in superposed relation; and at least one isolated Light Harvesting Complex (LHC) between the electrodes. Preferred photosensitive devices comprise an electron transport layer formed of a first photoconductive organic semiconductor material, adjacent to the LHC, disposed between the first electrode and the LHC; and a hole transport layer formed of a second photoconductive organic semiconductor material, adjacent to the LHC, disposed between the second electrode and the LHC. Solid state photosensitive devices of the present invention may comprise at least one additional layer of photoconductive organic semiconductor material disposed between the first electrode and the electron transport layer; and at least one additional layer of photoconductive organic semiconductor material, disposed between the second electrode and the hole transport layer. Methods of generating photocurrent are provided which comprise exposing a photovoltaic device of the present invention to light. Electronic devices are provided which comprise a solid state photosensitive device of the present invention.

The present invention relates to use of an organic matrix material for producing an organic semiconductor material, characterized in that the organic matrix material is comprised at least partly of a spirobifluorene compound, and the glass transition temperature of the organic matrix material is at least 120° C. and the highest occupied molecular orbital (HOMO) of the matrix material is at a maximum energy level of 5.4 eV; and also to an organic semiconductor material and electronic component.

PCT No. PCT/JP98/00823 Sec. 371 Date Oct. 28, 1998 Sec. 102(e) Date Oct. 28, 1998 PCT Filed Feb. 27, 1998 PCT Pub. No. WO98/38660 PCT Pub. Date Sep. 3, 1998In a capacitor comprising a pair of electrodes and a dielectric substance intervening between the two electrodes, one of the electrodes is composed of sintered niobium nitride. Preferably, the dielectric substance is composed of niobium oxide and the electrode other than the electrode composed of sintered niobium nitride is composed of an ingredient selected from electrolytes, organic semiconductors and inorganic semiconductors. This capacitor has good environmental stability and good leak current characteristics.

In a multilayer organic device (10) comprising a substrate bearing an anode (12) and a cathode (20), wherein located between the anode (12) and the cathode (20) is at least a first layer (16) comprising a first organic semiconductor material; and a second layer (18) over the first layer (16) comprising a second organic semiconductor material; the first organic semiconductor material is a polymer and the second organic material is a polymer or an oligomer, the average molecular weight of the first organic semiconductor material being higher than the average molecular weight of the second organic semiconductor material.

A thin film transistor comprises a layer of organic semiconductor material and spaced apart first and second contact means or electrodes in contact with said material. A multilayer dielectric comprises a first dielectric layer having a thickness of 200 nm to 500 nm, in contact with the gate electrode and a second dielectric layer in contact with the organic semiconductor material, and wherein the first dielectric layer comprise a continuous first polymeric material having a relatively higher dielectric constant less than 10 and the second dielectric layer comprises a continuous second non-fluorinated polymeric material having a relatively lower dielectric constant greater than 2.3. Further disclosed is a process for fabricating such a thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing the organic semiconductor layer to be aligned.

A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.

Improved environmental barrier coatings and improved organic semiconductor devices employing the improved environmental barrier coatings are disclosed herein. Methods of making and using the improved coatings and devices are also described. An improved environmental barrier coating generally includes a primary barrier layer, a secondary barrier layer disposed on the primary barrier layer, and a passivation layer disposed on the secondary barrier layer. The secondary barrier layer is formed using atomic layer deposition.

An organic semiconductive material comprising at least one matrix material and at least one doping material, wherein the doping material is selected from an organic compound and wherein the matrix material is selected from an diamine compound, also an organic component and a mixture for producing a doped semiconductor layer.

A light-receiving device comprises, on a substrate, a first light-receiving part for detecting light of a first wavelength range, and a second light-receiving part for detecting light of a second wavelength range. At least a part of incident light is transmitted through the first light-receiving part and then received by the second light-receiving part. The central wavelength of the first wavelength range is longer than the central wavelength of the second wavelength range, and the first light-receiving part is composed of an organic semiconductor having an absorption spectral maximum in the first wavelength range.

The invention relates to the use of an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof. In order to be able to handle organic semiconductors more easily in the production process and to be able to produce electronic components with doped organic semiconductors more reproducibly, a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative may be used as a mesomeric compound, which under like evaporation conditions has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).

The invention relates to a capacitive flexible pressure sensor based on a composite material dielectric layer and a preparation method of the capacitive flexible pressure sensor and belongs to the technical field of sensors. The flexible pressure sensor includes an upper flexible substrate and a lower flexible substrate, and an upper conducting layer attached to the inner surface of the upper flexible substrate and a lower conducting layer attached to the inner surface of the lower flexible substrate. The composite material dielectric layer is arranged between the upper conducting layer and the lower conducting layer. Compared with the prior art, doping is performed on dielectric layer polymer resin of the capacitive flexible pressure sensor. The doping material includes metal conductors, ferroelectric ceramics, carbon material and organic semiconductors. By adopting the above doping material, the flexibility of the capacitive flexible pressure sensor is improved effectively and the application and promotion of the sensor are facilitated.

To provide an organic field effect transistor with stable characteristics and a long life span, an organic field effect transistor includes a gate electrode 8 formed on an organic semiconductor film 2 made of an organic semiconductor material with a gate insulating film 3 interposed therebetween; and a source electrode 6 and a drain electrode 7 provided so as to come in contacts with the organic semiconductor film with the gate electrode 8 interposed therebetween. At least one of the source electrode 6 and the drain electrode 7 is formed in contact with the organic semiconductor film 2 with charge injection layers 4 and 5 made of an inorganic material interposed therebetween.

An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.

A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.

Provided is an inverter having a new structure capable of easily controlling a threshold voltage according to position in fabricating an inverter circuit on a plastic substrate using an organic semiconductor. A driver transistor is formed with a dual-gate structure and a positive bias voltage is applied to the top gate of the driver transistor so that a body effect appears in the organic semiconductor. Accordingly, the threshold voltage is shifted to a negative zone due to positive potential applied to the top gate of the driver transistor so that the driver transistor acts as an enhancement type transistor. A dual-gate organic structure may be applied to a load transistor rather than the driver transistor, or a p-type dual-gate organic transistor structure may be applied to both the driver transistor and the load transistor. Lifespan of the device can be increased, reliability of the device can be improved, and an organic inverter can be provided in which characteristics of organic electronic elements are easily adjusted according to circuit design even after the organic electronic elements are fabricated.

A process for encapsulating a component made of organic semiconductors is provided which includes steps of: a) providing a housing including a substrate with electrical connections and a cover; b) mixing a soldering glass with at least one of a binder and a solvent; c) applying the soldering glass at least to the cover, in the form of an encircling bank; d) expelling the binder or solvent; e) sintering-on of the solder; f) covering the substrate with layers which represent the semiconductor component together with electrodes; g) placing the cover onto the substrate; and h) locally heating the soldering glass by means of a light source with a predetermined peak wavelength, wherein the housing parts and soldering glass are matched to one another such that their coefficients of thermal expansion differ from one another by less than 1.0×10⁻⁶K⁻¹.

An image sensor 1 has a substrate 2 and primary light-receiving pixels 4 arrayed in the direction of the surface of the substrate, and the primary light-receiving pixels are formed by laminating plural secondary light-receiving pixels 10, 20 and 30 which sense lights in different wavelength ranges, respectively, via at least sealing insulation layers 18 and 28 between adjacent secondary light-receiving pixels in the thickness direction. Each secondary light-receiving pixel includes a photoelectric conversion portion 14, 24, or 34 for photoelectrically converting the lights and a signal output portion 12, 22 or 32 for outputting signals from a thin film transistor 40 according to charges generated by the photoelectric conversion portion, and the active layer 48 of the thin film transistor is formed from an oxide semiconductor or organic semiconductor.

In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.

An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

A vertical organic thin film transistor is provided along with an organic light-emitting transistor, which is characterized in that an active layer is formed of a p-type organic semiconductor compound having a dielectric constant of 3.5 or more, and work function values of an anode and a cathode are different from each other. The vertical organic thin film transistor is advantageous because it exhibits excellent current-voltage properties due to a short channel length, and has simple fabrication processes. Also, in the vertical organic thin film transistor, current properties in response to the gate voltage are of an enhancement type. Therefore, the vertical organic thin film transistor may be fabricated into the organic light-emitting transistor through a simple process.

The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.