306 results about "Organic semiconductor" patented technology

The invention provides a multiband photoresponse nerve synapse device based on a two-dimensional and organic heterostructure, an array and application, and belongs to the technical field of organic electric solid-state devices. The device provided by the invention adopts a three-end bottom gate top contact structure and comprises a gate substrate, an insulating layer, a channel layer and a source / drain electrode, and the channel layer forms an II-type heterojunction by a two-dimensional semiconductor material with a narrow-band gap characteristic and an organic semiconductor material. The heterostructure realizes ultraviolet to far infrared (365nm-10 [mu] m) multiband photoelectric response, and shows synaptic plasticity under light pulse modulation, including short-term enhancement, long-term enhancement and learning-forgetting-re-learning characteristics. Large-area array preparation of the device can be realized through methods such as chemical vapor deposition, solution spin coating, jet printing or layer-by-layer self-assembly. The technology not only can be used for brain-like learning and memory simulation, but also can be applied to the fields of sensing and memory integrated intelligent systems, optical neural networks, artificial vision, multi-mode intelligent sensing and the like.

Provided are small molecules for organic photovoltaic cells lacking pendant aliphatic groups with labile hydrogens. Small-molecule OPVs grown by vacuum thermal evaporation are resistant to degradation by 30 keV proton irradiation, in contrast to polymer-based OPVs that suffer a 50% efficiency loss under similar conditions. Also provided are formulations comprising these compounds. Further provided are optoelectronic devices that utilize these compounds.

Organic bipolar transistor (100), comprising a crystalline first organic semiconductor layer (108) on or above a substrate (102), wherein the crystalline first organic semiconductor layer (108) has a first conduction type; and a crystalline second organic semiconductor layer (112) on or above the crystalline first organic semiconductor layer (108), wherein the crystalline second organic semiconductor layer (112) has a second conduction type, wherein the first conduction type differs from the second conduction type, wherein the crystalline first organic semiconductor layer (108) has a first dopant and the crystalline second organic semiconductor layer (112) has a second dopant which differs from the first dopant; wherein the crystalline first organic semiconductor layer (108) exhibits a first crystallinity and the crystalline second organic semiconductor layer (112) exhibits a second crystallinity, where the second crystallinity is less than or equal to the first crystallinity; a third organic semiconductor layer (110) arranged between the crystalline first organic semiconductor layer (108) and the crystalline second organic semiconductor layer (112), wherein the third organic semiconductor layer (110) is undoped, wherein the third organic semiconductor layer (110) has a third crystallinity that is less than or equal to the first crystallinity of the crystalline first organic semiconductor layer (108); and a fourth organic semiconductor layer (116) arranged on or above the crystalline second organic semiconductor layer (112), wherein the fourth organic semiconductor layer (116) has the same conduction type as the crystalline first organic semiconductor layer (108), wherein the fourth organic semiconductor layer (116) has a fourth crystallinity that is less than or equal to the second crystallinity of the crystalline second organic semiconductor layer (112).

The invention discloses a multifunctional synaptic transistor with an organic ternary heterogeneous coupling structure and a manufacturing method thereof, and belongs to the field of organic optical synaptic transistors. The multifunctional synaptic transistor comprises an electrode, a substrate, a gate dielectric layer and an organic PN junction, the organic PN junction comprises an N-type organic semiconductor layer and a P-type organic semiconductor layer stacked on the N-type organic semiconductor layer, a chiral COF layer with the area smaller than that of the P-type organic semiconductor layer is arranged on the P-type organic semiconductor layer, the electrode comprises a source electrode and a drain electrode, and the source electrode and the drain electrode are both in contact with the chiral COF layer and the P-type organic semiconductor layer. Through optical pulse input information, polarization and multi-wavelength photoelectric information can be acquired, processed and stored by utilizing a photoelectric response enhancement effect formed by a ternary heterogeneous coupling structure, efficient integration of multiple functions such as circular polarization light identification, wide spectrum response and bidirectional synapse is realized, and a new scheme is provided for a compact intelligent visual system.

The invention discloses a source electrode, a vertical organic field effect transistor and a preparation method of the vertical organic field effect transistor. The preparation method of the source electrode comprises the following steps: preparing a source electrode precursor solution; preparing a self-assembly interface; preparing a low-dimensional material film; exposing the transfer inlet; transferring a low-dimensional material film; volatilizing the solvent; and annealing treatment. The vertical organic field effect transistor is characterized in that a grid substrate, a dielectric layer, a source electrode, an organic semiconductor layer and a drain electrode are sequentially stacked, and a test contact point is arranged on the source electrode. According to the invention, the preparation of the vertical organic field effect transistor source electrode with low roughness and low cost is realized, and a high-performance vertical organic field effect transistor device with high switching current ratio and large current density characteristics is realized.

The invention relates to a nerve interface device based on a transparent organic thin film transistor and a manufacturing method thereof. The device comprises a substrate, a first electrode layer comprising a plurality of source electrodes, a plurality of drain electrodes and a plurality of first electrodes, an organic semiconductor layer, a first insulating layer, a second electrode layer comprising a plurality of gate electrodes and a plurality of second electrodes, an interconnection wire layer, a biological electrode layer and a packaging layer which are sequentially arranged from bottom to top, a plurality of neural interface units are arranged in the device, each neural interface unit comprises a plurality of transistors, at least one capacitor and two biological electrodes, each transistor comprises a source electrode, a drain electrode, a gate electrode, an organic semiconductor layer and a first insulating layer between the transistor electrodes, two polar plates of each capacitor are respectively a first electrode and a second electrode which are opposite in position; the material of each layer of the device is a transparent flexible material. The device is low in cost, large in area, high in channel number, long in service life, and high in time and spatial resolution.

The application discloses a high-speed annealing equipment and method for an organic semiconductor thin film, and relates to the technical field of the organic semiconductor thin film. The high-speed annealing equipment for the organic semiconductor thin film comprises a sealed cavity for annealing the organic semiconductor thin film, a heating plate arranged in the sealed cavity, a temperature measuring element arranged on the surface of the heating plate and located below the thin film, a liquid nitrogen nozzle connected with the inner wall of the top of the sealed cavity and located directly above the thin film, a power supply electrically connected with the heating plate, and a PID controller electrically connected with the heating plate, the temperature measuring element and the power supply. The application solves the problem that the current thermal annealing method is difficult to realize high-speed and accurate temperature control, and the annealing equipment and method for the organic semiconductor thin film are not mature.

The invention belongs to the technical field of organic electroluminescent materials, and particularly relates to a triazine compound and an organic electroluminescent device thereof. The triazine compound provided by the invention has good electron transport performance, triazine is connected with a meta-substituted benzene ring, the other two substituents of the meta-substituted benzene ring are biphenyl, and at least one benzene ring of the biphenyl contains at least one nitrogen atom. The organic semiconductor material has good planarity and appropriate LUMO energy level, the good planarity can increase the mobility of electrons, the appropriate LUMO energy level can reduce the injection barrier of carriers, the voltage of a device can be reduced, the efficiency of the device can be improved, and the service life of the device can be prolonged.

This photodetection element comprises: a first electrode layer 11, a second electrode layer 12, a photoelectric conversion layer 13 located between the first electrode layer 11 and the second electrode layer 12, and an electron transport layer 21 located between the first electrode layer 11 and the photoelectric conversion layer 13, wherein the photoelectric conversion layer 13 includes quantum dots, the electron transport layer 21 contains a polymer that has a polymer chain including a structural unit derived from an n-type organic semiconductor.

The present invention relates to compounds of formula (I) as well as to their use as organic doping agent, as transport layer as absorbing layer, as charge injection layer, as organic semiconductor itself, organic semiconductive matrix material or as hole transport layer. The invention also relates to organic semiconductive materials, electronic components, organic field-effect transistor, semiconductor unit and electroluminescent arrangement in which the compounds of formula (I) are used.

The application discloses a method for P-type doping of an organic field effect transistor semiconductor layer and an organic field effect transistor prepared by the method. 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (F4-TCNQ) is dissolved in an orthogonal solvent of the organic semiconductor layer as a P-type dopant, and the P-type dopant is spin-coated on an organic semiconductor layer film which has been spin-coated in an air atmosphere, and the doping is activated by rapid thermal annealing, so that the problems caused by hopping transmission and Coulomb traps in charge transport are improved, the threshold voltage is reduced, and the on-off ratio is improved. For a P-type field effect transistor, the P-type doping enhances hole transport, effectively improves the saturation current, and suppresses electron transport, so that the power consumption is reduced when the transistor is turned off. The doping method is based on a solution method and is simple in process and low in preparation cost, can be applied to large-scale production, and has a good application prospect in flexible and portable electronic devices.

The application discloses a kind of copolymer organic semiconductor devices based on isolation and interconnection and preparation method, including substrate, photoetching blocking layer, insulating isolation layer, N organic field effect transistor and N-1 interconnection line;Photoetching blocking layer includes isolation layer and inorganic dielectric layer;Isolation layer is opened with N longitudinal through isolation groove along length direction;Inorganic dielectric layer includes lower dielectric layer and upper dielectric layer;Lower dielectric layer is located in N isolation, and upper dielectric layer is laid on the top of isolation layer and lower dielectric layer;Each organic field effect transistor includes semiconductor layer, source, drain and gate;Semiconductor layer is laid in the isolation groove at the bottom of corresponding lower dielectric layer section, and its material is organic copolymer.The application effectively utilizes isolation groove and photoetching blocking layer, and the semiconductor layer of different semiconductor materials is wrapped and isolated, so as to realize the integration of different organic field effect transistors on the same substrate, and the organic field effect transistor can realize effective interconnection.

The invention relates to an MXene-BTCN memristor, a preparation method of the MXene-BTCN memristor and a data storage structure, the MXene-BTCN memristor comprises a conductive substrate layer, a metal electrode layer arranged on the conductive substrate layer and an MXene-BTCN functional layer located between the conductive substrate layer and the metal electrode layer, and the MXene-BTCN functional layer is formed by compounding MXene and an organic semiconductor BTCN. BTCN molecules are introduced into an MXene layer through a surface engineering strategy, and a stable hybrid structure is formed by utilizing the interaction between a strongly electron-withdrawing-CN group in BTCN and the surface of MXene, so that the dispersity and the electrical stability of the material are improved. By regulating and controlling the electrode material, the device can respectively realize a fast bipolar switch (Au electrode) and synaptic gradual change modulation (Ag electrode), and has the functions of nonvolatile storage and brain-like calculation. The method not only has an application prospect in the field of high-performance storage, but also can be used for constructing a high-precision brain-like computing system.

The invention relates to the technical field of photoelectric detection, and discloses a wide-spectrum photoelectric detector based on a crystalline silicon-organic composite heterojunction, which comprises a crystalline silicon avalanche photodiode (APD) layer and an organic semiconductor active layer. Through an energy band matching design, the organic layer covers the surface of the micro-nano structure of the crystalline silicon APD to form a synergistic photoelectric response interface. The structure utilizes the high gain characteristic of the crystalline silicon APD and the broadband spectrum absorption advantage of the organic material to realize the broadband spectrum detection from visible light to near infrared light. In addition, the light capture efficiency is remarkably enhanced through the micro-nano structure design, and the exciton dissociation efficiency is improved through interface electric field regulation and control. The invention solves the problems of narrow spectral range and low sensitivity of the traditional photoelectric detector, and is suitable for medical health monitoring and high-speed optical communication systems.

Disclosed in the present invention are an optoelectronic computing-in-memory integrated device based on a semiconductor heterojunction, and a fabrication method therefor. The device comprises: a charge blocking layer, a charge trapping layer, a charge tunneling layer and a channel layer, which are sequentially arranged on a surface of a substrate; and source and drain electrodes arranged on two ends of the channel layer, wherein the channel layer comprises a two-dimensional semiconductor layer and an organic semiconductor layer, which are connected at one end to form a heterojunction, and the source and drain electrodes are respectively arranged on the two-dimensional semiconductor layer and the organic semiconductor layer; and the heterojunction formed by the two-dimensional semiconductor layer and the organic semiconductor layer simultaneously realizes carrier tuning and optoelectronic-signal response and achieve band alignment tuning, and cooperates with the charge trapping layer to complete in-situ computing and storage of information. The present invention constructs a channel material by using a heterojunction formed made up of a two-dimensional material and an organic material, thereby fabricating a neuromorphic electronic device having an optoelectronic storage effect, and the present invention is suitable for optoelectronic neuromorphic computing and applications.

The invention belongs to the technical field of organic photoelectric semiconductor materials, and relates to a 2.7-bis (triphenylpyrimidine) fluorene compound and application thereof. The invention provides a 2.7-bis (triphenylpyrimidine) fluorene compound which has a linear symmetric structure, and the overall structure has high photoluminescence quantum efficiency and good film forming characteristics. The compound provided by the invention has the characteristic of amplified spontaneous emission, and can realize an extremely low ASE threshold value when being used as an optical gain medium. The 2.7-bis (triphenylpyrimidine) fluorene compound provided by the invention is easy to prepare and has a good application prospect in the fields of organic optical pump lasers and organic semiconductors.

Provided is an organic modulation element including an organic modulation layer containing a plurality of organic semiconductor molecules, a first electrode, and a second electrode. Each of the plurality of organic semiconductor molecules is a molecule in which an excited state enabling reverse intersystem crossing from a lowest excited triplet state to a lowest excited singlet state is formed due to irradiation with the input light. In each of the plurality of organic semiconductor molecules, an intersystem crossing rate constant from the lowest excited singlet state to the lowest excited triplet state is greater than a reverse intersystem crossing rate constant from the lowest excited triplet state to the lowest excited singlet state, and the reverse intersystem crossing rate constant from the lowest excited triplet state to the lowest excited singlet state is greater than a non-radiative deactivation rate constant from the lowest excited triplet state to a ground state.

The invention relates to the technical field of organic synthesis chemistry and catalytic chemistry, and discloses a reaction method for obtaining a biaryl compound through Suzuki-Miyaura coupling based on C-S bond activation, aryl sulfide is used as an electrophilic reagent, aryl boric acid ester is used as a nucleophilic reagent, in the presence of a nickel catalyst, a bidentate ligand, alkali and copper salt, a reaction is performed in an organic solvent, and the biaryl compound is obtained. Thus, the corresponding biaryl compound is obtained. According to the method, traditional C-S bonds difficult to break can be efficiently activated under uniform conditions, electron-rich and electron-deficient aryl thioethers and various aryl borates are compatible, and the application range of a substrate is wide; meanwhile, the aryl sulfide does not need to be pre-oxidized or pre-functionalized, the steps are simple, the atom economy is high, and the method is suitable for large-scale production. The obtained biaryl compound can be widely applied to the fields of drug molecule synthesis, organic semiconductor materials and the like.

The application belongs to the technical field of organic semiconductor electronic devices, and discloses a flexible threshold value adjustable negative capacitance transistor and a preparation method, and a small logic circuit. The flexible threshold value adjustable negative capacitance transistor comprises a flexible substrate, an organic semiconductor layer, an organic dielectric layer, a source-drain electrode and two gate electrodes. The preparation method is as follows: a bottom gate electrode is prepared on the surface of the flexible substrate and an organic ferroelectric film is spin-coated; an organic polymer film is spin-coated on the surface of the organic dielectric layer as a semiconductor channel layer; a source / drain metal electrode is prepared; finally, an organic ferroelectric film is spin-coated and a top gate electrode is prepared. The application utilizes the negative capacitance principle of the organic ferroelectric transistor to reduce the working voltage and power consumption, and the double-gate structure is made to make the threshold voltage of the transistor adjustable, which has a great effect in the flexible logic circuit based on the unipolar device.

The invention relates to a funnel diode realized based on a nanopore modified dielectric polymer molecule monolayer, and relates to the technical field of semiconductor devices. The preparation method of the funnel diode comprises the following steps: forming a three-layer PVP dielectric film through bi-crosslinking treatment, and constructing a nanopore array on the surface of the three-layer PVP dielectric film by using a soft nanoimprint technology to form a polymer nano dielectric layer; sequentially depositing an organic semiconductor layer and a top electrode to complete a diode main body structure; and finally, integrating a molecular memory monolayer formed by gold nanoclusters or copper stearate. The device is compact in structure, the unidirectional convergence of current carriers is realized by utilizing a funnel effect generated by the nanopores, and the device has the characteristics of high-voltage rectification ratio and ultralow working voltage under the coordination of a single molecular layer, and has nonvolatile storage and synaptic plasticity.

Disclosed are an element comprising a substrate and at least two different optoelectronic devices, wherein the at least two different optoelectronic devices are monolithically fabricated on the substrate; and a method for producing the same. Also disclosed is an organic semiconductor laser diode comprising a substrate, an insulating grating, a first electrode, an organic layer and a second electrode in this order.

The invention discloses an active layer based on light regulation free radical bipolar doping, a device, an array and a visual system. The problems that existing neuromorphic vision hardware is low in integration level, single in function and difficult to meet complex requirements are solved. The active layer comprises an organic semiconductor material and a free radical dopant, and wavelength selective reversible bipolar doping can be realized: p-type doping is presented and excitatory response is generated under 808 nm irradiation, and n-type doping is presented and inhibitory response is generated under 450 nm irradiation. Based on the active layer, an optical reconfigurable bipolar neuromorphic device with a simple structure is constructed, and the device has dynamic synaptic characteristics and light-controlled bipolar photoelectric response at the same time. The device is used as a pixel unit, can be integrated on a large scale to form a neuromorphic visual array, and forms a complete system with a signal reading and processing unit. The system can synchronously execute multiple visual functions of motion detection, spatio-temporal information memory and contrast enhancement feature extraction at a sensing front end.

To provide a novel compound that exhibits excellent thermal and chemical stability, high carrier mobility, and high solubility in solvents, and is particularly suitable as an organic semiconductor, as well as a method for producing the same. [Solution] A compound represented by the following general formula (1). TIFF2026061690000041.tif30142 (In general formula (1), R 1 and R 2 Each of these independently represents a hydrogen atom, a halogen atom, a perfluoroalkylsulfonyloxy group, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group, and may further have substituents, and may have the following divalent linking group A, where the divalent linking group A is -O-, -S-, -NR 4 R represents a divalent linking group of any of the following: -, -CO-, -SO-, and -SO2-, or a divalent linking group formed by the bonding of two or more of these divalent linking groups. 4 (This represents a hydrogen atom, alkyl group, alkenyl group, alkynyl group, aryl group, or heteroaryl group.)

Provided is a bonded photocatalyst which is capable of exhibiting a higher catalytic activity than conventional bonded photocatalysts and which has an excellent degree of freedom in molecular design. The bonded photocatalyst has a solid medium between a hydrogen-generating photocatalyst containing an organic semiconductor and an oxygen-generating photocatalyst, the hydrogen-generating photocatalyst is bonded to the solid medium, and the oxygen-generating photocatalyst is bonded to the solid medium.

The application belongs to the technical field of organic semiconductor optoelectronics, and discloses a triphenylamine dicarboxy self-assembled hole transport material, a synthesis method and application as an optoelectronic device. The triphenylamine dicarboxy is used as an anchor group, a bridging unit and a hole transport unit are introduced into the molecular structure through a self-assembled monolayer strategy, thereby obtaining a hole transport material containing triphenylamine dicarboxy, which can solve the technical problems that the organic small molecules with anchor groups in the prior art have poor stability and poor device performance. The introduction of triphenylamine dicarboxy in the hole transport material can improve the efficiency of the optoelectronic device, prolong the service life of the optoelectronic device, including a perovskite solar cell, a perovskite light-emitting diode, a quantum dot light-emitting diode and the like.

A carbonyl-terminated quinonoid compound having a structure as represented by formula I, formula II or formula III, and a high-electron-mobility organic semiconductor material constructed by using same as an electron-deficient acceptor unit, and a preparation method therefor and the use thereof. The method provided by the present application is simple to operate and has a high product yield.

Provided is an aromatic compound which is an organic semiconductor material of a coating application type having high carrier mobility, high heat resistance, and high solubility.　The aromatic compound is represented by formula (5) or formula (5-2). Only one among the combinations of adjacent two of R25 to R28 constitutes formula (6) to form a five- or six-membered ring, and only one among the combinations of adjacent two of R29 to R32 constitutes formula (6-2) to form a five- or six-membered ring. X7 represents an oxygen atom, etc.; Y4 represents CR37, etc.; R25 to R33 each represent a hydrogen atom, etc.; and R33 is a group represented by formula (2). k and m are each 0 or 1 and l is an integer of 1-20.

The invention provides a polymer based on 2, 6-dibromo-4H-cyclopenta [1, 2-B: 5, 4-B] dithiophene-4-ketone as well as a preparation method and application of the polymer, and belongs to the technical field of organic photoelectric materials. The polymer based on the 2, 6-dibromo-4H-cyclopenta [1, 2-B: 5, 4-B] dithiophene-4-ketone provided by the invention is a polymer P-ODDTO-BT, a polymer P-ODDTO-TT and a polymer P-ODDTO-T with structures shown in a formula I, a formula II and a formula III respectively. The polymer provided by the invention has high carrier mobility on the basis of good thermal stability and photochemical stability, and is beneficial to application in the field of organic semiconductor materials.

The invention provides a perylene crystal / tungsten sulfide heterojunction material, a preparation method thereof and a nonlinear photonic device, the heterojunction material is composed of an organic semiconductor perylene crystal layer and an inorganic semiconductor tungsten sulfide layer, and the organic semiconductor perylene crystal layer and the inorganic semiconductor tungsten sulfide layer are combined through Van der Waals' force to form a surface-surface heterojunction structure. According to the structure, optical anisotropy and energy donor characteristics of perylene crystals are utilized, a WS2 layer second harmonic (SHG) signal is remarkably enhanced through dipole-dipole coupling, and the highest enhancement multiple can reach 650 times. Besides, the heterojunction material has excellent second harmonic performance and excellent light stability, and the preparation process of the heterojunction material is mild in condition and high in controllability. The heterojunction belongs to a novel material of the invention, and meanwhile, the huge application potential of the heterojunction in the nonlinear optical field is found for the first time, for example, the heterojunction can be applied to the fields of nonlinear optical frequency doubling chips, on-chip photon modulators, polarization programmable photonic devices and the like.