660 results about "Organic semiconductor" patented technology

The invention discloses a multicolor photoelectric response synaptic device and a preparation method thereof. The multicolor photoelectric response synaptic device is of a multi-layer structure. The multilayer structure comprises a transparent conductive electrode layer, a hole transport material layer, a lead-free perovskite layer, an electron transport material layer, an organic semiconductor charge transfer compound layer and a metal electrode layer in sequence along the light incidence direction. The preparation method comprises the steps of preparing the transparent conductive electrode layer; sequentially preparing a hole transport material layer, a lead-free perovskite layer, an electron transport material layer and an organic semiconductor charge transfer compound layer on the transparent conductive electrode layer through a spin coating method; and preparing the metal electrode layer on the organic semiconductor charge transfer compound layer through vacuum evaporation. The multicolor photoelectric response synaptic device is reasonable in structural design, can realize ultraviolet-visible-near infrared multicolor photoelectric synaptic function simulation, can realize a color identification function on red light, green light and blue light in a visible light wave band, and has a good application prospect.

According to an aspect, a detection device includes: a first detection circuit including a first photodiode sensitive to first light and a second photodiode sensitive to second light; and a second detection circuit including a third photodiode sensitive to third light. The first photodiode and the second photodiode are coupled in series and in opposite directions to form a first detection element. One end side of the first detection element is coupled to a first signal line via a first transistor. Another end side of the first detection element is configured to be supplied with a first drive signal. A cathode of the third photodiode is coupled to a second signal line via a second transistor. An anode of the third photodiode is configured to be supplied with a second drive signal.

The invention provides a multiband photoresponse nerve synapse device based on a two-dimensional and organic heterostructure, an array and application, and belongs to the technical field of organic electric solid-state devices. The device provided by the invention adopts a three-end bottom gate top contact structure and comprises a gate substrate, an insulating layer, a channel layer and a source / drain electrode, and the channel layer forms an II-type heterojunction by a two-dimensional semiconductor material with a narrow-band gap characteristic and an organic semiconductor material. The heterostructure realizes ultraviolet to far infrared (365nm-10 [mu] m) multiband photoelectric response, and shows synaptic plasticity under light pulse modulation, including short-term enhancement, long-term enhancement and learning-forgetting-re-learning characteristics. Large-area array preparation of the device can be realized through methods such as chemical vapor deposition, solution spin coating, jet printing or layer-by-layer self-assembly. The technology not only can be used for brain-like learning and memory simulation, but also can be applied to the fields of sensing and memory integrated intelligent systems, optical neural networks, artificial vision, multi-mode intelligent sensing and the like.

The invention relates to the field of solar cells, and discloses an organic compound, application thereof and a perovskite solar cell, and the organic compound has a structure shown in a formula (I). The organic compound provided by the invention has a proper energy level, is an organic semiconductor material with excellent performance, and can improve the efficiency of a perovskite solar cell device.

The invention discloses a high-temperature-resistant BOPP capacitor film and a preparation method and application thereof.The high-temperature-resistant BOPP capacitor film is prepared from polypropylene and organic semiconductor master batch, and the organic semiconductor master batch comprises a conjugated organic semiconductor polymer and a cyclic olefin polymer; the conjugated organic semiconductor polymer and the cyclic olefin polymer are added into the polypropylene to prepare the high-temperature-resistant BOPP capacitor film, the high-temperature-resistant BOPP capacitor film is used for preparing a thin-film capacitor, and the high-temperature-resistant performance of the thin-film capacitor can be remarkably improved.

The invention relates to an organic artificial synaptic transistor pressure sensor based on a suspension structure and an array, a preparation method and application thereof, and belongs to the technical field of semiconductor devices and sensing. The pressure sensor is composed of a substrate, source and drain electrodes, a supporting layer and a suspension structure based on an organic semiconductor layer, a dielectric passivation layer, a polyelectrolyte dielectric layer and a flexible grid electrode, and current change is caused through contact change between the organic semiconductor layer and the source and drain electrodes so as to achieve pressure response. The pressure sensor has the advantages of low power consumption, fast response, high sensitivity, wide detection range and the like, and can simulate a biological synapse function to realize a pressure synapse characteristic which is crucial to complex signal processing. In addition, the integrated array of the pressure sensors can be combined with an algorithm to realize high-accuracy touch recognition of braille characters. The results provide a new opportunity for the potential application of the method in bionic electronic skin, touch imaging, electrical equipment monitoring, sensing, storing and computing intelligent terminals and man-machine interaction systems.

The invention discloses a flexible gas flow velocity sensor based on ionic conductive gel, and a preparation method and application thereof. The flexible gas flow velocity sensor specifically comprises a semiconductor active layer and a pore-forming agent which are blended, performing spin coating and etching on the interdigital electrode substrate to prepare a semiconductor film with a porous structure; blending an ionic gel precursor solution; and spin-coating or drop-casting the precursor solution, and preparing the gel film with the ionic conduction characteristic through photo-crosslinking. The sensor provided by the invention can realize sensing response to different inert gases and different gas flow rates under low power consumption, and realizes detection application to human respiration through the Bluetooth test module. Air flow is introduced to regulate and control ion mobility, and the sensing performance of the device is improved by means of the porous organic semiconductor film. The flexible sensor can be attached to other objects or the surface of the inner wall of an airflow pipeline, the device is simple in structure and easy to miniaturize, and a millimeter-level micro sensor can be achieved. And the method is suitable for batch preparation of low-power-consumption miniaturized devices.

The invention relates to the technical field of solar cells, in particular to a perovskite cell, a preparation method of the perovskite cell, a laminated cell and a photovoltaic module. Electron-rich N atoms in dithienopyrrole (DTP) can improve the stability of an organic semiconductor material in an oxidation state, S atoms can interact with metal ions in a perovskite absorption layer, so that interface defects on the surface of perovskite are passivated, and meanwhile, DTP serves as a multifunctional electron-rich thiophene fused heterocyclic unit, so that the performance of the perovskite absorption layer is improved. The compound has the unique characteristics that the recombination energy is small, the mobility is high, N and thiophene sites can be chemically modified, and the compound can interact with metal ions. According to the invention, thiophene sites in DTP are chemically modified by adopting an electron-donating group containing aniline fluorene, so that the hole transport material has a deeper HOMO energy level, the HOMO energy level is better matched with the energy level of a perovskite material, better mobility is realized, and hole extraction and transport are facilitated.

The heat resistance of an organic semiconductor device including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer is improved. A heating step is performed after a layer containing an organometallic compound for a mask for an organic semiconductor layer, which is represented by General Formula (G1) below, is provided over the organic semiconductor layer.In General Formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, n represents an integer greater than or equal to 1 and less than or equal to 5, and n is the same as the valence of the metal M. Note that when n is greater than or equal to 2, a plurality of Ars may be the same or different and Xs may be the same or different. When Ar represents the substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group may be coordinated to the metal M.

The invention relates to the technical field of photosensitive sensing, and discloses an organic semiconductor material and an organic field effect transistor, the organic semiconductor material comprises a main body transmission material and a photosensitive doping material, the photosensitive doping material comprises a donor and an acceptor, the lowest unoccupied molecular orbital energy level of the main body transmission material is higher than the highest occupied molecular orbital energy level of a donor of the photosensitive doping material; the lowest unoccupied molecular orbital energy level of the main body transmission material is lower than the lowest unoccupied molecular orbital energy level of an acceptor of the photosensitive doped material; the highest occupied molecular orbital energy level of the host transport material is lower than the highest occupied molecular orbital energy level of the donor of the photosensitive doped material. The organic semiconductor material has a light negative response characteristic.

An organic semiconductor device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-transport layer and alight-emitting layer. The hole-transport layer is positioned between the anode and the light-emitting layer. The hole-transport layer is not in contact with the anode. The hole-transport layer includes a transport layer material for a light-emitting device and the GSP_slope that is a potential gradient of a surface potential of an evaporated film of the material is higher than or equal to 20 (mV / nm).

The invention provides an organic semiconductor powder-methyl fullerene modified spraying type polyurea material and a preparation method thereof, and relates to the technical field of polyurea materials. The preparation method comprises the following steps: adding a [6, 6]-phenyl-C61-methyl butyrate solution into a polyurea blend, carrying out an ultrasonic reaction, coating a mold with a reaction solution after the reaction is finished, and drying to obtain the organic semiconductor powder-methyl fullerene modified spraying type polyurea material. Compared with a traditional insulating sheath, the prepared spraying type polyurea material has better thermal performance and electrical performance, insulation protection difficulty caused by cross arm appearance difference is effectively eliminated, and the maintenance cost caused by bird damage and foreign matter is reduced. The spraying type polyurea material has the advantages that the curing time is short, dripping and hanging objects cannot be formed to influence the physical properties, meanwhile, the material waste can be effectively reduced, and the spraying type polyurea material has higher economical efficiency and wider application scenes.

The invention discloses an electric field sensor preparation method based on ion migration and injection characteristics, and relates to the technical field of electric field sensors. The method comprises the following steps: selecting a polymer matrix material and an ionic electrolyte, and carrying out microstructure regulation and control, film forming process regulation and control and surface modification on the basis of the selected polymer matrix material and ionic electrolyte to prepare a solid polymer electrolyte; selecting an organic semiconductor material, and regulating and controlling the hydrophilic or hydrophobic property of the material based on the selected organic semiconductor material to prepare an organic semiconductor; performing interface optimization between the solid polymer electrolyte and the organic semiconductor, and preparing an electric field sensor with a set detection range based on the optimized solid polymer electrolyte and organic semiconductor; the interface optimization is used to increase ion implantation and migration efficiency. According to the invention, measurement of electric fields with different frequencies, different amplitudes and different ranges can be realized, and efficient response and stability of the sensor can be ensured.

The invention provides an organic photoelectrochemical synaptic transistor and a preparation method and a regulation and control method thereof, and belongs to the technical field of transistors. The transistor comprises a substrate, a gate electrode, a source electrode, a drain electrode, an organic semiconductor channel layer and an electrolyte layer; according to the invention, various synaptic plasticity functions can be realized on a single synaptic transistor device through a simple and efficient preparation process; the method has the advantages of simplicity, high efficiency and convenience in large-scale integration. The synergistic effect of photons, electrons and ions is used as a regulation and control mechanism, a single-component n-type organic semiconductor is used as a channel layer material, voltage programming pulses are applied to a grid electrode, light irradiation is applied to a channel layer to simulate biological synaptic stimulation, output current is obtained at a source electrode and a drain electrode to simulate post-biological synaptic current, and the potential safety hazard is eliminated. Information encryption, compiling, hiding and recovery of the Morse code are simulated based on the output pulse current, and the method can be widely applied to the brain-like intelligence field of cognitive judgment with information double anti-counterfeiting encryption.

The invention discloses a polypropylene composite material as well as a preparation method and application thereof. The polypropylene composite material comprises the following raw materials: polypropylene and an organic semiconductor master batch, the polypropylene composite material is prepared by adding the organic semiconductor master batch into the polypropylene, the polypropylene composite material is used for preparing the BOPP capacitor film, and then the BOPP capacitor film is used for preparing the thin-film capacitor, so that the high-temperature resistance of the thin-film capacitor can be remarkably improved.

The invention discloses an organic semiconductor heterojunction photoelectric self-adaptive memristor and a preparation method thereof, and belongs to the field of neuromorphic devices, and the memristor sequentially comprises a substrate, a bottom electrode, a lower active layer, an upper active layer and a top electrode from bottom to top; the upper active layer is prepared from an organic material zinc phthalocyanine, and the lower active layer is prepared from an organic material N, N-tricosylperylene-3, 4, 9, 10-tetracarboxylic diimide. The memristor prepared by the invention realizes simulation of desensitization behavior and retina light adaptation function, and adaptivity modes are switched according to a stimulation type time-sharing trigger mechanism to support multi-mode perception and adaptive information processing in a dynamic environment, so that the development of a neuromorphic device for simulating the adaptivity function of a biological sensory system is promoted.

The invention relates to the technical field of semiconductors, in particular to a semiconductor carrier mobility prediction method and system, and the method comprises the steps: building a Markos jump rate which represents the transmission of charges in an organic semiconductor through a discontinuous jump mechanism; a main equation under the steady-state condition is established based on the Markos jump rate, and the main equation is used for representing that in the simulated charge transfer system, the charge occupation probability of each site depends on each other through the charge jump process and reaches balance under the steady state; establishing a hole mobility model and a mobility correction factor irrelevant to density, and establishing a mobility model based on the hole mobility model and the mobility correction factor; establishing a weak density dependency function based on the effective temperature, establishing an improved mobility model based on the weak density dependency function and the mobility model, and predicting the mobility of the semiconductor carrier based on the improved mobility model; the migration rate prediction error can be reduced, and the prediction precision can be improved.

The present invention discloses a preparation method of a wearable organic semiconductor fiber SERS sensor for analyzing glucose and uric acid in sweat. The method uses PEDOT:PSS and PVA as raw materials for spinning, and is sequentially modified using an Ag NWs solution and a 4-MPBA ethanol solution. The solution configuration is simple, and the wet spinning process for fiber preparation is simple to operate, with easy control of parameters, enabling continuous production. Compared with SERS sensors in the prior art, the wearable organic semiconductor fiber SERS sensor can be integrated with clothing and has good comfort performance, good flexibility and mechanical properties, and excellent SERS performance with high sensitivity. It can achieve long-term, stable, portable, and remote intelligent monitoring of human sweat information.

The invention relates to the technical field of gas sensing, in particular to a chemical resistance type gas sensor based on an organic semiconductor polymer film and a preparation method and application thereof, and the chemical resistance type gas sensor comprises a substrate, and a conversion element and a sensing element which are integrated on the substrate; the sensing element is an organic semiconductor polymer P3HT film; a P3HT solution is spin-coated on a substrate integrated with an interdigital electrode to form a P3HT thin film, then vacuum oxygen plasma treatment is performed by adopting a Hall ion source to modify the P3HT thin film, so that the chemical resistance type gas sensor for ammonia gas sensing is successfully constructed, the surface of the P3HT thin film subjected to oxygen plasma treatment has an oxygen-containing functional group, and the surface of the P3HT thin film subjected to oxygen plasma treatment has an oxygen-containing functional group. The P3HT thin film has excellent conductivity, when ammonia gas contacts with the surface of the P3HT thin film, the resistance change of the P3HT thin film can be detected by an instrument, then the sensitivity of the sensor is obtained, and compared with the prior art, the gas sensor is high in ammonia gas responsivity and has high-selectivity low detection limit.

The invention discloses an organic semiconductor material containing an eight-membered aza fused ring as well as a preparation method and application of the organic semiconductor material. The structural formula of the organic semiconductor material containing the eight-membered aza fused ring is as shown in formula (I)-formula (IX). The organic semiconductor material containing the eight-membered aza fused ring can be used as a light-emitting material in an organic light-emitting diode, and has the characteristics of high-efficiency dark blue light emission and narrow half-peak width, so that an organic electroluminescent device with excellent photoelectric performance is obtained, and the application of organic electroluminescence in the field of ultra-high-definition display is finally realized.

Provided are small molecules for organic photovoltaic cells lacking pendant aliphatic groups with labile hydrogens. Small-molecule OPVs grown by vacuum thermal evaporation are resistant to degradation by 30 keV proton irradiation, in contrast to polymer-based OPVs that suffer a 50% efficiency loss under similar conditions. Also provided are formulations comprising these compounds. Further provided are optoelectronic devices that utilize these compounds.

Organic bipolar transistor (100), comprising a crystalline first organic semiconductor layer (108) on or above a substrate (102), wherein the crystalline first organic semiconductor layer (108) has a first conduction type; and a crystalline second organic semiconductor layer (112) on or above the crystalline first organic semiconductor layer (108), wherein the crystalline second organic semiconductor layer (112) has a second conduction type, wherein the first conduction type differs from the second conduction type, wherein the crystalline first organic semiconductor layer (108) has a first dopant and the crystalline second organic semiconductor layer (112) has a second dopant which differs from the first dopant; wherein the crystalline first organic semiconductor layer (108) exhibits a first crystallinity and the crystalline second organic semiconductor layer (112) exhibits a second crystallinity, where the second crystallinity is less than or equal to the first crystallinity; a third organic semiconductor layer (110) arranged between the crystalline first organic semiconductor layer (108) and the crystalline second organic semiconductor layer (112), wherein the third organic semiconductor layer (110) is undoped, wherein the third organic semiconductor layer (110) has a third crystallinity that is less than or equal to the first crystallinity of the crystalline first organic semiconductor layer (108); and a fourth organic semiconductor layer (116) arranged on or above the crystalline second organic semiconductor layer (112), wherein the fourth organic semiconductor layer (116) has the same conduction type as the crystalline first organic semiconductor layer (108), wherein the fourth organic semiconductor layer (116) has a fourth crystallinity that is less than or equal to the second crystallinity of the crystalline second organic semiconductor layer (112).

The invention discloses a multifunctional synaptic transistor with an organic ternary heterogeneous coupling structure and a manufacturing method thereof, and belongs to the field of organic optical synaptic transistors. The multifunctional synaptic transistor comprises an electrode, a substrate, a gate dielectric layer and an organic PN junction, the organic PN junction comprises an N-type organic semiconductor layer and a P-type organic semiconductor layer stacked on the N-type organic semiconductor layer, a chiral COF layer with the area smaller than that of the P-type organic semiconductor layer is arranged on the P-type organic semiconductor layer, the electrode comprises a source electrode and a drain electrode, and the source electrode and the drain electrode are both in contact with the chiral COF layer and the P-type organic semiconductor layer. Through optical pulse input information, polarization and multi-wavelength photoelectric information can be acquired, processed and stored by utilizing a photoelectric response enhancement effect formed by a ternary heterogeneous coupling structure, efficient integration of multiple functions such as circular polarization light identification, wide spectrum response and bidirectional synapse is realized, and a new scheme is provided for a compact intelligent visual system.

The invention discloses a source electrode, a vertical organic field effect transistor and a preparation method of the vertical organic field effect transistor. The preparation method of the source electrode comprises the following steps: preparing a source electrode precursor solution; preparing a self-assembly interface; preparing a low-dimensional material film; exposing the transfer inlet; transferring a low-dimensional material film; volatilizing the solvent; and annealing treatment. The vertical organic field effect transistor is characterized in that a grid substrate, a dielectric layer, a source electrode, an organic semiconductor layer and a drain electrode are sequentially stacked, and a test contact point is arranged on the source electrode. According to the invention, the preparation of the vertical organic field effect transistor source electrode with low roughness and low cost is realized, and a high-performance vertical organic field effect transistor device with high switching current ratio and large current density characteristics is realized.

A method of manufacturing a monolithic micro LED display component (2), the method comprising: depositing an LED (210) on a top surface (205a) of a substrate (205); depositing a base layer (240) over the LEDs (210), the base layer (240) forming a planar layer that isolates the LEDs (210); processing an organic thin film transistor (260), OTFT, on the base layer (240) by depositing a source (256) and a drain (258) and an active channel comprising an organic semiconductor layer (262); and after processing the OTFT (260), etching a base layer hole (242, 244), the base layer hole (242, 244) including a hole through the base layer (240) to allow a connection between the LED (210) and the OTFT (260).

The invention relates to a nerve interface device based on a transparent organic thin film transistor and a manufacturing method thereof. The device comprises a substrate, a first electrode layer comprising a plurality of source electrodes, a plurality of drain electrodes and a plurality of first electrodes, an organic semiconductor layer, a first insulating layer, a second electrode layer comprising a plurality of gate electrodes and a plurality of second electrodes, an interconnection wire layer, a biological electrode layer and a packaging layer which are sequentially arranged from bottom to top, a plurality of neural interface units are arranged in the device, each neural interface unit comprises a plurality of transistors, at least one capacitor and two biological electrodes, each transistor comprises a source electrode, a drain electrode, a gate electrode, an organic semiconductor layer and a first insulating layer between the transistor electrodes, two polar plates of each capacitor are respectively a first electrode and a second electrode which are opposite in position; the material of each layer of the device is a transparent flexible material. The device is low in cost, large in area, high in channel number, long in service life, and high in time and spatial resolution.

The invention discloses a preparation method of a wearable organic semiconductor fiber SERS (Surface Enhanced Raman Scattering) sensor for analyzing glucose and uric acid in sweat, PEDOT: PSS and PVA are used as raw materials for spinning, an Ag NWs solution and a 4-MPBA ethanol solution are sequentially used for modification, the solution preparation is simple, a wet spinning process is simple to operate during fiber preparation, parameters are easy to control, and the preparation method is suitable for industrial production. Compared with an SERS (Surface Enhanced Raman Scattering) sensor in the prior art, continuous production can be realized, and compared with the SERS sensor in the prior art, the SERS sensor can be integrated with clothes, has good comfort performance, good flexibility and mechanical property, excellent SERS performance and high sensitivity, and can realize long-term, stable, portable and remote intelligent monitoring on human body sweat information.

The invention is directed to a compound of formula (I) for use in organic electronic devices, an organic semiconductor layer comprising the compound of formula (I), an organic electronic device comprising the organic semiconductor layer, and a display device comprising the organic electronic device. Wherein R1, R2, R3 and R4 are independently selected from F, Cl, CN or CF3; R′ is selected from formula (II); R″ is selected from formula (III); R5 is selected from substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl or CN; and the “*” denotes the binding position.

A macromolecular compound for providing an organic semiconductor material exhibiting excellent conversion efficiency; a starting-material compound having high material design freedom; and methods for producing thereof. The macromolecular compound comprising a benzobisthiazole structural unit is represented by the formula (1):in the formula (1), T1, T2, B1, and B2 represent heteroaryl groups, the heteroaryl groups are optionally each independently substituted by an organosilyl group, a halogen atom, or a hydrocarbon group, and at least one of the heteroaryl groups represented by T1, T2, B1, and B2 is substituted by a halogen atom.

The present invention discloses a method for a functional layer of a high-precision non-destructive lithographic organic field-effect transistor compatible with a flexible elastic material. The method comprises the following steps: depositing a functional layer of an organic field-effect transistor on the surface of a substrate, and preparing a water-resistant protective layer or a double protective layer of a water-resistant protective layer and a solvent-resistant protective layer on the functional layer; spin-coating a photoresist on the solvent-resistant protective layer or the double protective layer for lithography to form a patterned photoresist film; etching the substrate; and sequentially post-treating the substrate to remove the patterned photoresist film, the water-resistant protective layer and the solvent-resistant protective layer to obtain the product. The method of the present invention has a simple process and universality. It can not only lithograph an organic semiconductor layer, but also lithograph an organic insulating layer and a polymer electrode layer. All the lithographic patterning of each functional layer of the organic field-effect transistor can be achieved by one lithography method.