451 results about "Relative permittivity" patented technology

Systems, articles, and methods for improved capacitive electromyography (“EMG”) sensors are described. The improved capacitive EMG sensors include one or more sensor electrode(s) that is/are coated with a protective barrier formed of a material that has a relative permittivity ∈_r of about 10 or more. The protective barrier shields the sensor electrode(s) from moisture, sweat, skin oils, etc. while advantageously contributing to a large capacitance between the sensor electrode(s) and the user's body. In this way, the improved capacitive EMG sensors provide enhanced robustness against variations in skin and/or environmental conditions. Such improved capacitive EMG sensors are particularly well-suited for use in wearable EMG devices that may be worn by a user for an extended period of time and/or under a variety of skin and/or environmental conditions. A wearable EMG device that provides a component of a human-electronics interface and incorporates such improved capacitive EMG sensors is described.

A semiconductor device which includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer is provided. The thickness of the oxide semiconductor layer is greater than or equal to 1 nm and less than or equal to 10 nm. The gate insulating layer satisfies a relation where ε_r/d is greater than or equal to 0.08 (nm⁻¹) and less than or equal to 7.9 (nm⁻¹) when the relative permittivity of a material used for the gate insulating layer is ε_r and the thickness of the gate insulating layer is d. The distance between the source electrode and the drain electrode is greater than or equal to 10 nm and less than or equal to 1 μm.

A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.

A slot fed microstrip patch antenna (200) includes an electrically conducting ground plane (208), the ground plane (208) having at least one coupling slot (206) and at least a first patch radiator (209). An antenna dielectric substrate material (205) is disposed between the ground plane (208) and the first patch radiator (209), wherein at least a portion of the antenna dielectric (210) includes magnetic particles (214). A feed dielectric substrate (212) is disposed between a feed line (217) and the ground plane (208). Magnetic particles can also be used in the feed line (217) dielectric. Patch antennas according to the invention can be of a reduced size through use of high relative permittivity dielectric substrate portions, yet still be efficient through use of dielectrics including magnetic particles which permit impedance matching of dielectric medium interfaces, such as the feed line (217) into the slot (206).

The present invention provides for an electrically insulating fluid or material of high relative permittivity or dielectric constant. The fluid has a low conductivity and high relative strength and is applicable to pulsed power drilling applications.

A test fixture has a flexible plastic cable that acts as a waveguide. The Device-Under-Test (DUT) is a small transceiver and antenna that operate in the Extremely High-Frequency (EHF) band of 30-300 GHz. The size of the DUT transceiver is very small, limiting the power of emitted electromagnetic radiation so that close-proximity communication is used. The envelope for reception may only extend for about a centimeter from the DUT transceiver, about the same size as the test socket. A slot is formed in the test socket very near to the antenna. The slot receives one end of the plastic waveguide. The slot extends into the envelope by the DUT transceiver so that close-proximity radiation is captured by the plastic waveguide. The waveguide has a high relative permittivity and reflective metalized walls so that the radiation may be carried to a receiver that is outside the envelope.

A metamaterial radome/isolator system includes a radiation source for providing a radiation beam through the radome/isolator having a frequency beyond the bandgap region where the metamaterial permittivity and permeability are both positive and the metamaterial medium has a low, matched relative permittivity and relative permeability.

The present invention is to provide a diaper structure, which includes a diaper main body formed by a fabric layer, an anti-leak layer and an absorbent material layer sequentially from the inner side to outer side thereof, and a communication chip and a metal antenna attached to the outer surface of the anti-leak layer and connected with each other to form an RFID tag. Thus, when the absorbent material layer absorbs the urine passing through the fabric layer and the inner surface of the anti-leak layer is in contact with the urine on the surface of the absorbent material layer, the change in the relative permittivity of the anti-leak layer causes a change in the impedance value of the metal antenna and consequently a change in the wavelength of the electromagnetic wave signal transmitted by the RFID tag, thereby enabling rapid detection of a soaking wet condition of the diaper.

A low profile antenna includes an antenna and a ground plane structure operatively associated with the antenna. The ground plane structure has a generally planar surface, at least one protrusion extending from the planar surface and a dielectric substrate supported by the planar surface. The dielectric substrate includes a relative permeability (μ) of greater than or equal to about one and a relative permittivity (ε) of greater than or equal to about one.

A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film, an intermediate insulating film formed on the first silicon oxide film and having a relative permittivity of not less than 7, and a second silicon oxide film formed on the intermediate insulating film. A charge trap layer is formed at least in either first or second silicon oxide film or a boundary between the first silicon oxide film and the intermediate insulating film or a boundary between the second silicon oxide film and the intermediate insulating film.

A slot fed microstrip patch antenna (300) includes a conducting ground plane (308), the conducting ground plane (308) including at least one slot (306). A dielectric material is disposed between the ground plane (308) and at least one feed line (317), wherein at least a portion of the dielectric layer (313) includes magnetic particles (324). The dielectric layer between the feed line (317) and the ground plane (308) provides regions having high relative permittivity (313) and low relative permittivity (312). At least a portion of the stub (318) is disposed on the high relative permittivity region (313).

A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k/t≦0.85 (nm⁻¹).

A high relative-permittivity B-staged sheet obtained by incorporating an insulating inorganic filler having a relative permittivity of at least 500 at room temperature into a solvent-less resin component so as to have an insultaing inorganic filler content of 80 to 99% by weight, a high relative-permittivity prepreg obtained from the above high relative-permittivity B-staged sheet, a process for the production of the high relative-permittivity prepreg, and a printed wiring board obtained from any one of the above high relative-permittivity B-staged sheet and the high relative-permittivity prepreg.

In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.

A waveguide having a non-conductive material with a high permeability (μ, μ_r for relative permeability) and/or a high permittivity (∈, ∈_r for relative permittivity) positioned within a housing. When compared to a hollow waveguide, the waveguide of this invention, reduces waveguide dimensions by

The waveguide of this invention further includes ridges which further reduce the size and increases the usable frequency bandwidth.

Devices for storing energy at a high density are described. The devices include an electrode preformed to present a high exposed area onto which a dielectric is formed. The dielectric material has a high dielectric constant (high relative permittivity) and a high breakdown voltage, allowing a high voltage difference between paired electrodes to effect a high stored energy density.