58 results about "Relative permittivity" patented technology

A photoelectric conversion apparatus includes an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. The photoelectric conversion apparatus further includes a first wiring portion electrically connected to the first semiconductor region; and a second wiring portion electrically connected to the second semiconductor region, An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer. There is a point at which dsio>(εsio / εprot)×dprot / 2 is satisfied, where dsio is a thickness of the oxide film, dprot is a thickness of the protective film, εsio is a relative permittivity of the oxide film, and εprot is a relative permittivity of the protective film. In a plan view from the second surface, the second wiring portion overlaps with at least a part of the second semiconductor region and does not overlap with the first semiconductor region.

[Problem] To provide an insulating composition that contains hollow silica particles and can form a coating film with excellent mechanical characteristics, electrical characteristics (low relative permittivity, low dissipation factor, etc.), insulating properties, and the like, and to provide a base material comprising the coating film. [Solution] An insulating composition containing a resin and 5-70 vol% of hollow silica particles, wherein the hollow silica particles have a secondary particle median diameter (D50) of 0.2-10 μm and a specific gravity of at least 0.3 g / cm3 and less than 1.00 g / cm3, and the specific gravity of the hollow silica particles is less than the specific gravity of the resin.

A feeding structure comprises: a dielectric plate for vehicle window having a first surface and a second surface opposite to the first surface; a feeding unit positioned on the first surface side of the dielectric plate; and a receiving unit positioned on the second surface side of the dielectric plate, wherein the dielectric plate includes a first dielectric region between the feeding unit and the receiving unit, and a second dielectric region adjacent to the first dielectric region in a plan view, and the second dielectric region has a relative permittivity lower than that of the first dielectric region when the feeding unit and the receiving unit are electromagnetically coupled to each other.

[Object]To provide a copper clad laminate that is capable of achieving high adhesion between a low dielectric resin film and a copper plating layer and a good volume resistivity while suppressing a transmission loss when being applied to a flexible circuit board, and a method for producing the copper clad laminate.[Solving Means]A copper clad laminate of the present invention includes a low dielectric resin film having a relative permittivity of 3.5 or lower and a dissipation factor of 0.008 or lower at a frequency of 10 GHz, and an electroless copper plating layer laminated on at least one surface of the low dielectric resin film. A weighted average size of crystallites in the electroless copper plating layer is 25 to 300 nm, and an adhesion strength between the resin film and the electroless copper plating layer is 4.2 N / cm or more.

The interlayer filler material of the present invention has a relative permittivity ranging from 2.0 to 5.0 when the moisture content is 0%, and a relative permittivity ranging from 2.5 to 5.5 when the moisture content is 0.5%. The relative permittivity at 0.5% moisture content is greater than that at 0% moisture content. According to the present invention, an interlayer filler material is available that allows the relative permittivity to be adjusted to a desired range even when the material categories of the resin composition used to form the interlayer filler material are the same.

The present invention provides a starting material coordination compound for forming a metal thin film, the starting material coordination compound having a central metal and a ligand coordinated to the central metal, (i) the atomic polarizability of the central metal being 45-51, and the starting material coordination compound for forming a metal thin film satisfying the following conditions: a polarization volume < = 200 and a relative dielectric constant < = 2.20; or (ii) the atomic polarizability of the central metal is 52-90, and the raw material coordination compound for forming a metal thin film satisfies the following conditions: polarization volume < = 240 and relative permittivity < = 2.50.

Disclosed is a polycrystalline ceramic dielectric comprising: crystal grain bulks made of a barium titanate-based ceramic; and grain boundaries comprising interfaces between the crystal grain bulks, wherein the composition of the grain boundaries is controlled using dopants. By controlling the grain boundary composition using dopants so that the dopants are distributed across a width of 5 nm or less and using a nano-sized, fine-grained barium titanate-based ceramic precursor, the grain boundary structure within the polycrystals may maintain electroneutrality, and their ferroelectricity may be controlled, thereby allowing for smoother polarization reaction. Accordingly, the present disclosure provides polycrystalline ceramic dielectrics that have dielectric properties such as high permittivity and low dielectric losses in a wide frequency range, a small amount of reduction in electric field-dependent relative permittivity, high temperature stability, non-reducibility under a reduction sintering condition, and resulting high insulation resistance, and a preparation method therefor.

An exploration system (1) comprises: a ground penetrating radar (10) that explores underground; and a control device (40) that acquires known distance information indicating a distance from one point on the ground to one point underground and reference time information indicating the reference time required for a first electromagnetic wave to reach the one point underground from the one point on the ground, calculates the relative permittivity underground, calculates the propagation speed of the first electromagnetic wave by using the relative permittivity, and calculates, by using the propagation speed, the propagation distance of the first electromagnetic wave when the ground penetrating radar (10) conducts the exploration at a point different from the one point on the ground.

This invention discloses a method for analyzing the electrical performance range of an antenna radome based on interpolation. The method includes randomly generating multiple sets of thickness error and relative permittivity error distribution values ​​within the radome's thickness error range and relative permittivity error range; plotting the far-field radiation pattern of the antenna after adding the radome; extracting the variation range of electrical performance indicators from the pattern; discretizing the incident angle, polarization angle, thickness, and relative permittivity at various points on the radome; and calculating the transmission coefficient T of the main polarization component based on the discrete points. M Extract T M The amplitude and phase variation ranges are used to obtain T by interpolation. M In the sector-shaped interval formed in the complex domain, the sector-shaped interval is divided into polygonal intervals. The polygonal intervals are added together to calculate the range of changes in the far-field radiation pattern of the radome. The range of changes in the electrical performance index is extracted. It is determined whether the electrical performance index of the radome meets the preset requirements. If it does, the process ends. Otherwise, the number of segments in the sector arc is modified until the range of changes in the electrical performance index that meets the preset requirements is obtained.

The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20° C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20° C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz] / [the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20° C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20° C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz] / [the relative permittivity (a)] of 0.993-1.007.

The present invention provides an electromagnetic wave absorbing composition that exhibits a low dielectric constant and a high dielectric loss tangent, and shows excellent absorption characteristics in the high frequency band of 60 GHz to 90 GHz. [Solution] An electromagnetic wave absorbing composition, The electromagnetic wave absorbing composition comprises (A) an electromagnetic wave absorbing filler in an amount of 6% to 30% by mass relative to the entire electromagnetic wave absorbing composition, and (B) an organic resin in an amount of 70% to 94% by mass relative to the entire electromagnetic wave absorbing composition, wherein the (A) electromagnetic wave absorbing filler is formed into a sheet from three or more filler selection compositions with different amounts of the selected filler blended with the (B) organic resin, and the dielectric loss tangent and relative permittivity at 60 GHz to 90 GHz are measured using the free-space method with a vector network analyzer, and the obtained measured values ​​are plotted with the relative permittivity on the X axis and the dielectric loss tangent on the Y axis, and the slope of the linearly approximated line is 0.050 or higher.

A photoelectric conversion apparatus comprising an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer. There is a point at which dsio>(εsio / εprot)×dprot / 2 is satisfied, where dsio is a thickness of the oxide film, dprot is a thickness of the protective film, εsio is a relative permittivity of the oxide film, and εprot is a relative permittivity of the protective film.

The present invention provides an actuator that can easily adjust the electrostatic stress acting between electrodes. [Solution] The actuator comprises an insulating flexible bag that forms a housing, a liquid dielectric filled inside the flexible bag, a plurality of electrodes arranged on the inner circumferential surface of the flexible bag whose separation distance changes according to the applied voltage, an expansion section in which the liquid dielectric present between the electrodes flows in and expands in volume when the separation distance between the electrodes decreases, and a separator inserted between the electrodes. The separator is in the form of a film with its front and back surfaces facing the electrodes and has through holes that penetrate in the thickness direction. As a result, the applied voltage is directly applied to the capacitor portion where only liquid dielectric is filled between the electrodes, and by adjusting the relative permittivity of the liquid dielectric, the amount of charge induced between the electrodes can be adjusted accordingly.

The invention provides a dimming device, a display panel and a display device.Materials of a solid electrolyte layer of the dimming device comprise lithium salt and metal oxide, the molar ratio of the lithium salt to the metal oxide is 1: (2.0-20), anions of the lithium salt contain metal elements, silicon elements or germanium elements, and the metal elements are metal elements, silicon elements or germanium elements. The relative dielectric constant of the metal oxide is greater than 8. The lithium salt and the metal oxide are matched with each other, through flexible adjustment of the two components, the conductivity of the dimming device can be improved, the corresponding coloring and fading time can be prolonged, and then when the dimming device is applied to the peep-proof function of the display panel, the switching speed of a peep-proof mode and a normal display mode is increased, and the use experience is improved.

A three-dimensional printing kit includes a build material composition and a dielectric agent. The build material composition includes a fluorinated polymeric material having an effective relative permittivity (εr) value ranging from >3 to ≤10,000. The dielectric agent includes a dielectric material having an effective relative permittivity (εr) value ranging from ≥1.1 to about ≤10,000.

To provide a high dielectric constant film with a high relative permittivity and a low dielectric loss tangent. [Solution] A high dielectric constant film containing a thermoplastic resin and an inorganic filler, wherein the relative permittivity of the high dielectric constant film at 10 GHz is 10 or more, and the dielectric loss tangent of the high dielectric constant film at 10 GHz is 0.01 or less.

An antenna lens placed within an outer shell having an outer side comprising a circular surface and opposed side dimensioned to fit into an upper end of an antenna, the lens densificated centrically and having antenna ridges in some embodiments. This antenna lens is useful to provide a cost-effective solution to problems associated with relative permittivity.

An insulating spacer comprises a conical spacer body that supports a central conductor, is positioned around the central conductor, and has an axial direction identical to that of the central conductor. The spacer body includes a concave surface forming section, which creates a conical concave surface, and a convex surface forming section, which creates a conical convex surface. In the concave surface forming section, the relative permittivity is specified such that it gradually decreases in the direction of inclination from the side of the central conductor to the intermediate section within the conical shape, while the relative permittivity remains constant from the intermediate section to the outer circumferential edge.In the convex surface forming section, the relative permittivity is set such that it is constant from the side of the central conductor to the intermediate region in the inclination direction, while the relative permittivity is set such that it gradually increases from the intermediate region to the side of the outer circumferential edge.

This invention discloses an adaptive voltage-equalizing thin-film array capacitor, relating to the field of capacitors. It comprises: multiple composite dielectric films of the same thickness stacked sequentially, each composite dielectric film having a non-uniformly distributed relative permittivity, forming at least two regions with different permittivity; each composite dielectric film has at least two sets of mutually isolated electrode layers, each set of electrode layers corresponding one-to-one with a region on the composite dielectric film with a different permittivity and covering the upper and lower surfaces of the composite dielectric film in that region, thereby forming a capacitor unit in each region. This invention, by inversely relating the non-uniform distribution of permittivity to dielectric strength and matching the electrode layer area, makes the capacitance value of each series-connected capacitor unit adapt to its dielectric strength, thereby achieving adaptive and balanced voltage distribution of each unit without adding external voltage-equalizing components, significantly improving the overall voltage withstand capability and service life of the capacitor.

The invention relates to the technical field of electromagnetic energy enhancement and electromagnetic power synthesis, and the existing method is extremely sensitive to the position of a radiation point source in a material and the change of the sectional area of the material, and has high dependence on the numerical value of the relative dielectric constant E or the relative permeability mu of the material. The invention provides an electromagnetic energy enhancement structure based on a dielectric constant near-zero metamaterial, and the structure is characterized in that electromagnetic energy supply structures are located at the periphery of an electromagnetic energy collection region, and the electromagnetic energy collection region and all the electromagnetic energy supply structures are disposed in a metal boundary; energy radiated by the electromagnetic energy supply structures is transmitted to the electromagnetic energy collection area through the filling area to be received, linear superposition of electromagnetic energy in the electromagnetic energy collection area is achieved, the intensity of the output electromagnetic energy is regulated and controlled by adjusting the number of the electromagnetic energy supply structures, and nearly 100% energy transmission efficiency can be achieved.

To provide a printed circuit board that can achieve good transmission characteristics for waveguides. [Solution] The printed circuit board has a first surface and a second surface located opposite the first surface, and comprises a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer consisting of one or more insulating layers located between the first and second insulating layers, a fifth insulating layer consisting of one or more insulating layers located between the first and third insulating layers, a through-hole located across the fourth insulating layer, the first insulating layer and the fifth insulating layer, and a first inner wall conductor covering the inner wall of the first through-hole. The insulator of the second insulating layer and an insulator continuous with the insulator of the third insulating layer are located in the through-hole, and the relative permittivity of the insulator of the second insulating layer and the insulator of the third insulating layer is smaller than the relative permittivity of the insulators of the first, fourth, and fifth insulating layers.

Semiconductor device (10, 10b), comprising: a semiconductor base body (100) having a first main surface (100a) and a second main surface (100b); a first electrode (4); and a second electrode (5), wherein the semiconductor base body (100) comprises: a first semiconductor layer (2) of a first conductivity type, which is arranged on the side of the second main surface (100b) of the semiconductor base body (100); a second semiconductor layer (1) of the first conductivity type, which has a concentration of impurities of the first conductivity type that is lower than that of the first semiconductor layer (2) and is located closer to the first main surface (100a) than the first semiconductor layer (2); and a third semiconductor layer (3) of a second conductivity type, which is located closer to the first main surface (100a) than the second semiconductor layer (1), wherein the first semiconductor layer (2) is electrically connected to the second electrode (5) in the second main surface (100b), wherein the third semiconductor layer (3) is electrically connected to the first electrode (4) in the first main surface (100a), wherein a defect concentration distribution of the third semiconductor layer (3) with respect to a thickness direction of the semiconductor base body (100) exhibits a plurality of peak values, wherein a thickness W of the third semiconductor layer (3), a thickness W N- the second semiconductor layer (1), the elementary charge q, a relative permittivity ε s of the semiconductor material of the semiconductor base body (100), the vacuum permittivity ε0, a nominal voltage V r , a nominal current density J r , a charge carrier lifetime τ of a charge carrier of the second conductivity type in the second semiconductor layer (1), a dosage amount D A the third semiconductor layer (3), a mean charge carrier concentration n Avg , an electric charge density N' D , and α(τ), which is given below as Formula 2 and which represents a ratio between an average charge carrier concentration of the second semiconductor layer (1) in a one-state of the semiconductor device (10, 10b) and an electrical charge concentration in a depletion layer around a boundary of the second semiconductor layer (1) and the third semiconductor layer (3) in the middle of the second semiconductor layer (1) during a recovery process of the semiconductor device (10, 10b), where α(τ) is a factor of proportionality and is represented by the following Formula 1, N ' D = α ( τ ) n A vg fulfill the following formula 3: α ( τ ) = 4.15 ( I n ( 2.58 τ + 1 ) ) 4.77 + 225 W > 1.6 ε s ε 0 V rq DA − 2 q WN − DA 2.5 α ( τ ) J r τ

A conductive two-dimensional particle-containing composition including: a conductive two-dimensional particle of a layered material including one or a plurality of layers; a dispersion medium having a relative permittivity greater than that of water; and a fluorine element and an oxygen element on a surface of the conductive two-dimensional particle, wherein the one or plurality of layers includes a layer body represented by: MmXn, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is 1 to 4, and m is more than n and 5 or less, and a modifier or terminal T existing on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom.

A capacitor dielectric layer, a method for manufacturing the same, and a capacitor structure, wherein the capacitor dielectric layer comprises at least two laminates among a first laminate, a second laminate, and a third laminate stacked along a first direction, each laminate comprising a first dielectric layer and a second dielectric layer, the main crystal phase of the first dielectric layer being at least one of a tetragonal structure phase and an orthorhombic structure phase, and the main crystal phase of the second dielectric layer being at least one of a tetragonal structure phase and an orthorhombic structure phase. The above capacitor dielectric layer has a high relative permittivity and a low leakage current.

In this invention, a dielectric includes a region in which relative permittivity continuously changes.

An aerosol-generating device includes a cavity configured to accommodate an aerosol-generating article, a radiating element, and a printed circuit board. The printed circuit board may include a ground layer, a first dielectric, a second dielectric, a source layer, and a control layer that is separated from the source layer by a gap, and relative permittivity of the first dielectric is less than relative permittivity of the second dielectric.

This aerosol-generating device may comprise: a cavity configured to accommodate an aerosol-generating article; a radiator; and a printed circuit board. The printed circuit board may include a ground layer, a first dielectric, a second dielectric, a source layer, and a control layer separated from the source layer by a gap, and the relative permittivity of the first dielectric may be smaller than that of the second dielectric.

A high-frequency-dielectric-heating-adhesive-sheet includes: a first adhesive layer containing a first thermoplastic resin; a second adhesive layer containing a second thermoplastic resin; and an intermediate layer, a ratio DPM / DP1 of dielectric property DPM of the intermediate layer to dielectric property DP1 of the first adhesive layer and a ratio DPM / DP2 of the dielectric property DPM of the intermediate layer to dielectric property DP2 of the second adhesive layer are each less than one, and the dielectric property DP1, the dielectric property DP2, and the dielectric property DPM are values of dielectric property (tanδ / ε′r) of the first adhesive layer, the second adhesive layer, and the intermediate layer, respectively. tanδ denotes a dielectric dissipation factor at 23 degrees C. and a frequency of 40.68 MHz and ε′r denotes a relative permittivity at 23 degrees C. and the frequency of 40.68 MHz.

The present invention reduces Vπ⋅L. An optical modulator (1) comprises an optical waveguide (2), a first cladding layer (3), a first electrode (4), a second electrode (5), and a second cladding layer (7). The first cladding layer (3) covers the optical waveguide (2). The first electrode (4) is spaced apart in the width direction from a first end (21) of the optical waveguide (2) in the width direction. The second electrode (5) is spaced apart in the width direction from a second end (22) of the optical waveguide (2) in the width direction, and a voltage is applied between the first electrode (4) and the second electrode (5). The second cladding layer (7) covers the first cladding layer (3). The refractive index of the first cladding layer (3) is lower than the refractive index of the optical waveguide (2). The relative permittivity of the second cladding layer (7) is higher than the relative permittivity of the first cladding layer (3). The second cladding layer (7) has a slit (72) overlapping the optical waveguide (2). The relative permittivity inside the slit (72) is lower than the relative permittivity of the second cladding layer (7).

A display apparatus includes a display element on a substrate, and an encapsulation layer covering the display element. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The organic encapsulation layer has a relative permittivity of 2.3 to 2.7, and the second inorganic encapsulation layer has a density of greater than 1.8 g / cm3 and less than 2.03 g / cm3.