120 results about "Relative permittivity" patented technology

Method and systems are provided that characterize a geological formation, which involve collecting or obtaining electrical signal data that results from interaction of electrical signals with the formation. The electrical signal data is processed to determine data characterizing relative permittivity and conductivity of the formation. The data characterizing relative permittivity and conductivity of the formation are used as inputs to models to determine data characterizing water saturation of the formation, particularly useful in formation evaluation and reservoir saturation dynamic monitoring in fresh water and mixed salinity environments.

A coil component includes an exterior body, a coil, and a pair of terminal electrodes. The coil is disposed inside the exterior body. The pair of terminal electrodes are electrically connected to the coil and are disposed on the exterior body. The exterior body includes a first portion that covers the coil and is made of a resin, and a second portion including a side surface on which the pair of terminal electrodes are disposed. The second portion includes a material having a relative permittivity lower than a relative permittivity of the resin and is disposed between the coil and the pair of terminal electrodes.

A photoelectric conversion apparatus includes an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. The photoelectric conversion apparatus further includes a first wiring portion electrically connected to the first semiconductor region; and a second wiring portion electrically connected to the second semiconductor region, An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer. There is a point at which dsio>(εsio / εprot)×dprot / 2 is satisfied, where dsio is a thickness of the oxide film, dprot is a thickness of the protective film, εsio is a relative permittivity of the oxide film, and εprot is a relative permittivity of the protective film. In a plan view from the second surface, the second wiring portion overlaps with at least a part of the second semiconductor region and does not overlap with the first semiconductor region.

An antenna system includes an antenna and a passive device for angular deflection of a main radiation lobe of the antenna, characterized in that the device consists of a lens, said lens having a constant thickness and having a progressive relative permittivity between an inner edge of the lens located on the side of the geometric center of the antenna and an outer edge of the lens located on the side of a periphery of the antenna, the profile of the relative permittivity as a function of distance to the geometrical center of the antenna being adapted such that the lens deflects the main radiation lobe of the antenna by a predefined deflection angle over at least a portion of an operating frequency band of the antenna.

To provide a metal-clad laminate with a low dielectric constant, a low dielectric loss tangent, and a low water absorption rate.SOLUTION: A metal-clad laminate according to the embodiment has a structure in which a metal foil is arranged on the outermost surface of a dielectric, which comprises a composite film filled with heat-resistant particles in polytetrafluoroethylene and having perfluoroalkoxyalkane layers placed on both sides. The heat-resistant particle filling rate in the dielectric is 40 to 65 vol%, the thickness of the dielectric is 25 to 100 μm, and the total thickness of the metal-clad laminate is 45 to 125 μm. The metal-clad laminate has a coefficient of thermal expansion (CTE) of 10 to 40 ppm / K, a dielectric constant (Dk) of 2.4 to 3.0, a dielectric loss tangent (Df) of 0.0005 to 0.0025, and a water absorption rate is 0.20% or less.SELECTED DRAWING: Figure 1

A multilayer body 1a is provided with metal tantalum 10 and a dielectric layer 20. The dielectric layer 20 is in contact with the metal tantalum 10 and contains an oxide containing tantalum and tungsten. At 120 Hz, the dielectric layer 20 has a relative permittivity greater than 27 and equal to or smaller than 41.7.

[Problem] To provide an insulating composition that contains hollow silica particles and can form a coating film with excellent mechanical characteristics, electrical characteristics (low relative permittivity, low dissipation factor, etc.), insulating properties, and the like, and to provide a base material comprising the coating film. [Solution] An insulating composition containing a resin and 5-70 vol% of hollow silica particles, wherein the hollow silica particles have a secondary particle median diameter (D50) of 0.2-10 μm and a specific gravity of at least 0.3 g / cm3 and less than 1.00 g / cm3, and the specific gravity of the hollow silica particles is less than the specific gravity of the resin.

To provide a copper clad laminate and a method for manufacturing the same that enables high adhesion between low-dielectric resin film and copper plating layer and good volume resistivity while suppressing transmission loss when applied to flexible circuit boards.SOLUTION: A copper clad laminate according to the present invention includes: a low dielectric resin film with a relative permittivity of 3.5 or less and a dielectric loss tangent of 0.008 or less at a frequency of 10 GHz; and an electroless copper plating layer laminated on at least one surface of the low dielectric resin film, the weighted average size of crystallites in the electroless copper plating layer is 25 to 300 nm, and the adhesion strength between the resin film and the electroless copper plating layer is 4.2 N / cm or more.SELECTED DRAWING: Figure 1

A feeding structure comprises: a dielectric plate for vehicle window having a first surface and a second surface opposite to the first surface; a feeding unit positioned on the first surface side of the dielectric plate; and a receiving unit positioned on the second surface side of the dielectric plate, wherein the dielectric plate includes a first dielectric region between the feeding unit and the receiving unit, and a second dielectric region adjacent to the first dielectric region in a plan view, and the second dielectric region has a relative permittivity lower than that of the first dielectric region when the feeding unit and the receiving unit are electromagnetically coupled to each other.

[Object]To provide a copper clad laminate that is capable of achieving high adhesion between a low dielectric resin film and a copper plating layer and a good volume resistivity while suppressing a transmission loss when being applied to a flexible circuit board, and a method for producing the copper clad laminate.[Solving Means]A copper clad laminate of the present invention includes a low dielectric resin film having a relative permittivity of 3.5 or lower and a dissipation factor of 0.008 or lower at a frequency of 10 GHz, and an electroless copper plating layer laminated on at least one surface of the low dielectric resin film. A weighted average size of crystallites in the electroless copper plating layer is 25 to 300 nm, and an adhesion strength between the resin film and the electroless copper plating layer is 4.2 N / cm or more.

[Problem] To provide a motor for an electric compressor that makes it possible to suppress a decrease in life of an insulator, and an electric compressor comprising said motor. [Solution] The motor for an electric compressor comprises stator core, an insulator that is in contact with the core, and a winding that is wound around the insulator. The insulator is made of a resin material having a relative permittivity of 3.7 or less and a dielectric loss tangent of 0.0004 or less.

A silicon carbide semiconductor device according to the present invention comprises a silicon carbide substrate. The silicon carbide substrate has a drift region that has a first conductivity type, a body region that is above the drift region and has a second conductivity type, a source region that is above the body region and has the first conductivity type, a connection region that is below the body region and has the second conductivity type, and an electric field relaxation region that is below the connection region and has the second conductivity type. A gate trench passes through the source region and the body region to the drift region. The drift region has a first semiconductor region that is between a first virtual plane that includes an upper end surface of the electric field relaxation region and a second virtual plane that includes a lower end surface of the body region. When d is the thickness of the first semiconductor region, N is the concentration of impurities that have the first conductivity type in the first semiconductor region, ε1 is the relative permittivity of the silicon carbide substrate, Vd is the diffusion potential of the silicon carbide substrate, ε0 is the permittivity of vacuum, and q is the elementary charge, d≤2×(2×ε1×ε0×Vd / (q×N))^0.5.

The interlayer filler material of the present invention has a relative permittivity ranging from 2.0 to 5.0 when the moisture content is 0%, and a relative permittivity ranging from 2.5 to 5.5 when the moisture content is 0.5%. The relative permittivity at 0.5% moisture content is greater than that at 0% moisture content. According to the present invention, an interlayer filler material is available that allows the relative permittivity to be adjusted to a desired range even when the material categories of the resin composition used to form the interlayer filler material are the same.

A rotor includes an outer rotor part and an inner rotor part provided inside the outer rotor part. The outer rotor part is a bonded magnet with a relative permittivity larger than 40 and equal to or smaller than 200. The inner rotor part is an insulating material with a relative permittivity equal to or smaller than 10. The rotor satisfies D2=D3 and 0.15≤(D3−D4) / (D1−D2), where D1 is an outer diameter of the outer rotor part, D2 is an inner diameter of the outer rotor part, D3 is an outer diameter of the inner rotor part, and D4 is an inner diameter of the inner rotor part.

The present invention provides a starting material coordination compound for forming a metal thin film, the starting material coordination compound having a central metal and a ligand coordinated to the central metal, (i) the atomic polarizability of the central metal being 45-51, and the starting material coordination compound for forming a metal thin film satisfying the following conditions: a polarization volume < = 200 and a relative dielectric constant < = 2.20; or (ii) the atomic polarizability of the central metal is 52-90, and the raw material coordination compound for forming a metal thin film satisfies the following conditions: polarization volume < = 240 and relative permittivity < = 2.50.

Disclosed is a polycrystalline ceramic dielectric comprising: crystal grain bulks made of a barium titanate-based ceramic; and grain boundaries comprising interfaces between the crystal grain bulks, wherein the composition of the grain boundaries is controlled using dopants. By controlling the grain boundary composition using dopants so that the dopants are distributed across a width of 5 nm or less and using a nano-sized, fine-grained barium titanate-based ceramic precursor, the grain boundary structure within the polycrystals may maintain electroneutrality, and their ferroelectricity may be controlled, thereby allowing for smoother polarization reaction. Accordingly, the present disclosure provides polycrystalline ceramic dielectrics that have dielectric properties such as high permittivity and low dielectric losses in a wide frequency range, a small amount of reduction in electric field-dependent relative permittivity, high temperature stability, non-reducibility under a reduction sintering condition, and resulting high insulation resistance, and a preparation method therefor.

To provide an oxide film, etc., having a small change rate of capacitance even in high temperature though having a high specific inductive capacity.SOLUTION: An oxide film includes an oxide crystal phase having Wadsley-Roth structure as a main crystal phase. A specific inductive capacity at 25°C is 125 or more at a frequency of 0.1 kHz or more and 100 kHz or less.SELECTED DRAWING: None

An exploration system (1) comprises: a ground penetrating radar (10) that explores underground; and a control device (40) that acquires known distance information indicating a distance from one point on the ground to one point underground and reference time information indicating the reference time required for a first electromagnetic wave to reach the one point underground from the one point on the ground, calculates the relative permittivity underground, calculates the propagation speed of the first electromagnetic wave by using the relative permittivity, and calculates, by using the propagation speed, the propagation distance of the first electromagnetic wave when the ground penetrating radar (10) conducts the exploration at a point different from the one point on the ground.

This invention discloses a method for analyzing the electrical performance range of an antenna radome based on interpolation. The method includes randomly generating multiple sets of thickness error and relative permittivity error distribution values ​​within the radome's thickness error range and relative permittivity error range; plotting the far-field radiation pattern of the antenna after adding the radome; extracting the variation range of electrical performance indicators from the pattern; discretizing the incident angle, polarization angle, thickness, and relative permittivity at various points on the radome; and calculating the transmission coefficient T of the main polarization component based on the discrete points. M Extract T M The amplitude and phase variation ranges are used to obtain T by interpolation. M In the sector-shaped interval formed in the complex domain, the sector-shaped interval is divided into polygonal intervals. The polygonal intervals are added together to calculate the range of changes in the far-field radiation pattern of the radome. The range of changes in the electrical performance index is extracted. It is determined whether the electrical performance index of the radome meets the preset requirements. If it does, the process ends. Otherwise, the number of segments in the sector arc is modified until the range of changes in the electrical performance index that meets the preset requirements is obtained.

The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20° C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20° C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz] / [the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20° C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20° C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz] / [the relative permittivity (a)] of 0.993-1.007.

The present invention provides an electromagnetic wave absorbing composition that exhibits a low dielectric constant and a high dielectric loss tangent, and shows excellent absorption characteristics in the high frequency band of 60 GHz to 90 GHz. [Solution] An electromagnetic wave absorbing composition, The electromagnetic wave absorbing composition comprises (A) an electromagnetic wave absorbing filler in an amount of 6% to 30% by mass relative to the entire electromagnetic wave absorbing composition, and (B) an organic resin in an amount of 70% to 94% by mass relative to the entire electromagnetic wave absorbing composition, wherein the (A) electromagnetic wave absorbing filler is formed into a sheet from three or more filler selection compositions with different amounts of the selected filler blended with the (B) organic resin, and the dielectric loss tangent and relative permittivity at 60 GHz to 90 GHz are measured using the free-space method with a vector network analyzer, and the obtained measured values ​​are plotted with the relative permittivity on the X axis and the dielectric loss tangent on the Y axis, and the slope of the linearly approximated line is 0.050 or higher.

A photoelectric conversion apparatus comprising an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer. There is a point at which dsio>(εsio / εprot)×dprot / 2 is satisfied, where dsio is a thickness of the oxide film, dprot is a thickness of the protective film, εsio is a relative permittivity of the oxide film, and εprot is a relative permittivity of the protective film.

The present invention provides an actuator that can easily adjust the electrostatic stress acting between electrodes. [Solution] The actuator comprises an insulating flexible bag that forms a housing, a liquid dielectric filled inside the flexible bag, a plurality of electrodes arranged on the inner circumferential surface of the flexible bag whose separation distance changes according to the applied voltage, an expansion section in which the liquid dielectric present between the electrodes flows in and expands in volume when the separation distance between the electrodes decreases, and a separator inserted between the electrodes. The separator is in the form of a film with its front and back surfaces facing the electrodes and has through holes that penetrate in the thickness direction. As a result, the applied voltage is directly applied to the capacitor portion where only liquid dielectric is filled between the electrodes, and by adjusting the relative permittivity of the liquid dielectric, the amount of charge induced between the electrodes can be adjusted accordingly.

To allow a user to measure a relative dielectric constant of a dielectric material with a simpler method.SOLUTION: In a dielectric constant measuring device 1, a dielectric material 30 is arranged between a transmission / reception unit 10 that transmits an electromagnetic wave R1 for measuring a relative dielectric constant and receives a reflection wave R2 of the electromagnetic wave R1 and a target 20 reflecting the electromagnetic wave R1. The dielectric constant measuring device measures receiving power of the electromagnetic wave R1 while changing a distance L between the transmission / reception unit 10 and the dielectric material 30, determines maximum power of the electromagnetic wave R1 and the minimum power of the electromagnetic wave, and measures the relative dielectric constant on the basis of a ratio of the minimum power of the electromagnetic wave R1 to the maximum power of the electromagnetic wave R1.SELECTED DRAWING: Figure 1

To provide a dielectric composition or the like having a small decrease in relative permittivity before and after application of a DC high voltage and having a high relative permittivity under a high electric field.SOLUTION: A dielectric composition according to the present invention comprises a crystalline phase comprising an Sr2NaNb5O15 based oxide having a tungsten bronze structure. The Sr2NaNb 5O15 based oxide has, in a synchrotron radiation XRD pattern measured at a measurement wavelength of 0.85 Å, a crystal structure having a peak top of the synchrotron radiation XRD pattern in the range of 10.7° to 11.0° at a diffraction angle 2θ and the ratio of the intensity of the peak having the peak top to the intensity of the maximum peak having the maximum intensity in the Sr2NaNb5O15 based oxide in the synchrotron radiation XRD pattern is 0.0043 or more.SELECTED DRAWING: Figure 4

The invention provides a dimming device, a display panel and a display device.Materials of a solid electrolyte layer of the dimming device comprise lithium salt and metal oxide, the molar ratio of the lithium salt to the metal oxide is 1: (2.0-20), anions of the lithium salt contain metal elements, silicon elements or germanium elements, and the metal elements are metal elements, silicon elements or germanium elements. The relative dielectric constant of the metal oxide is greater than 8. The lithium salt and the metal oxide are matched with each other, through flexible adjustment of the two components, the conductivity of the dimming device can be improved, the corresponding coloring and fading time can be prolonged, and then when the dimming device is applied to the peep-proof function of the display panel, the switching speed of a peep-proof mode and a normal display mode is increased, and the use experience is improved.

Described and illustrated is a method (12) for operating a TDR level measuring device (1), wherein the TDR level measuring device (1) has at least one probe (2) for conducting an electromagnetic signal and a measuring transducer (3), wherein the measuring transducer (3) has an electronic unit (4) for generating a measuring signal and for evaluating a reflected measuring signal and a process connection element (5), wherein the measuring transducer (3) is connected to a container (7) via the process connection element (5), wherein the process medium (8) to be measured is arranged in the container (7) and wherein a gaseous medium (9) is arranged above the process medium (8), wherein by means of detecting (17) and evaluating the amplitude A S a measuring signal emitted by the electronic unit (4) and the amplitude A R of a measurement signal reflected at the interface of the process connection element (5) and the container (7), the relative permittivity εr of the gaseous medium (9) is determined, characterized by that to determine the relative permittivity ε r the attenuation α 0 of the transmitted measuring signal by the measuring transducer (3) is taken into account, whereby to determine the attenuation α 0 the attenuation α e by the electronic unit (4) and the mechanical attenuation α m determined by the process connection element (5), and / or that the impedance ratio IFR 0 = Z 0_Sonde / Z MU is taken into account, where Z 0_Sonde the impedance of the probe (2) in vacuum and Z MU is the impedance of the transmitter (3) and where the impedance ratio IFR 0 in a reference gas with known permittivity ε r is determined.

A three-dimensional printing kit includes a build material composition and a dielectric agent. The build material composition includes a fluorinated polymeric material having an effective relative permittivity (εr) value ranging from >3 to ≤10,000. The dielectric agent includes a dielectric material having an effective relative permittivity (εr) value ranging from ≥1.1 to about ≤10,000.

To provide a flexible waveguide that has improved flexibility while suppressing degradation in the transmission efficiency of electrical signals in high frequency bands such as microwaves.SOLUTION: A flexible waveguide includes a rod-shaped dielectric and a conductor covering an outer surface of the dielectric, and the dielectric satisfies the following (a) and (b): (a) a density of 1.50 g / cm3 or less; (b) a relative dielectric constant measured at a frequency of 10 GHz of 2.3 or less and a dielectric loss measured at a frequency of 10 GHz of 0.0013 or less.SELECTED DRAWING: Figure 1

To provide a high dielectric constant film with a high relative permittivity and a low dielectric loss tangent. [Solution] A high dielectric constant film containing a thermoplastic resin and an inorganic filler, wherein the relative permittivity of the high dielectric constant film at 10 GHz is 10 or more, and the dielectric loss tangent of the high dielectric constant film at 10 GHz is 0.01 or less.