117results about How to "High relative permittivity" patented technology

The invention relates to the technical field of flexible electronics, in particular to a wearable flexible capacitive pressure sensor and a preparation method thereof. The structure of the wearable flexible capacitive pressure sensor comprises an upper electrode, a dielectric layer, a bottom electrode and a wire; the upper electrode and the bottom electrode are composed of polyimide matrixes and electrodes, and the wires are attached to the polyimide substrate and connected with the electrodes, wherein the dielectric layer is formed by mixing a compressible polymer matrix and a conductive filler, and the polymer matrix has an internal microstructure; the graphene aerogel is a conductive filler and is applied to a dielectric layer of a flexible capacitive pressure sensor. Compared with theprior art, the capacitance pressure sensor structure based on the electronic skin technology improves the capacitance value of the pressure sensor, improves the sensitivity of the sensor, and is widely applied to electronic skin as wearable electronic equipment to monitor human body health.

The disclosed is a dielectric ceramic composition in which dielectric particles 2a are formed. The dielectric particle 2a has a core 22a comprised of hexagonal barium titanate, and a shell 24a formed on an outer circumference of the core 22a and comprised of cubical or tetragonal barium titanate. The purpose of the present invention is to provide a new dielectric ceramic composition, in which permittivity is hardly lowered due to size effect, a good balance between high insulation resistance and permittivity can easily be achieved, and changes in insulation resistance and specific permittivity due to temperature are small; and an electronic component such as a multilayer ceramic capacitor using the dielectric ceramic composition as its dielectric layer.

A dielectric ceramic compact is provided which can be obtained by sintering at a low temperature of 1000° C. or less, can be obtained by co-sintering a dielectric ceramic composition with a metal having superior electrical conductivity, such as Ag, and has a high relative dielectric constant, a high Q and a small temperature coefficient of dielectric properties. The dielectric ceramic composition combines an xBaO-yTiO2-zReO3/2 ceramic composition and a glass composition; wherein 8<=x<=18, 52.5<=y<=65, 20<=z<=40, in which x, y, and z represent mole percent, x+y+z=100 and Re indicates a rare earth element, and the glass composition comprises about 10 to 25 wt % of SiO2, about 10 to 40 wt % of B2O3, about 25 to 55 wt % of MgO, 0 to about 20 wt % of ZnO, 0 to about 15 wt % of Al2O3, about 0.5 to 10 wt % of Li2O and 0 to about 10 wt % of RO in which R is at least one selected from the group consisting of Ba, Sr and Ca.

A process for producing structures in a semiconductor zone, has the steps of a) producing a trench (2) in the semiconductor zone (18), b) filling the trench with a photoresist (19), and c) exposing the photoresist (19) using ion beams (20), d) developing the photoresist (19). The energy density and ion dose for the ion beams (20) are selected in such a way that the photoresist (19) is only chemically changed at defined depths, so as to produce two regions, in the first region (21) of which the photoresist has been chemically changed at the defined depths by the ion beams (20), and in the second region of which the photoresist has been left chemically unchanged, so that during the developing step the photoresist is removed in precisely one of the two regions.

The invention discloses a crystalline silicon battery surface passive film and a manufacturing method of the crystalline silicon battery surface passive film. The crystalline silicon battery surface passive film comprises a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The silicon nitride film is deposited on the first silicon oxide film. The second silicon oxide film is deposited on the silicon oxide film. The thickness d1 of the first silicon oxide film is 10 nm-30 nm. The thickness d2 of the silicon nitride film is 30 nm-50 nm. The thickness d3 of the second silicon oxide film is 25 nm-50 nm. The probability of light full reflection is substantially increased, and namely more light enters a silicon wafer, so that more charge carriers are generated, and battery efficiency is improved.

The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.

An antenna system is provided that includes an antenna having an elongated conducting segment, such as a metal rod. An anisotropic metamaterial surrounds the elongated conducting segment of the antenna. The presence of the metamaterial remarkably expands the VSWR<2. An example antenna is a monopole antenna, such as a quarter-wavelength monopole antenna, surrounded by the metamaterial.

The invention relates to a dielectric layer for an embedded capacitance material and the embedded capacitance material. The dielectric layer is composed of a thin film layer with good flexibility and resin composition layers respectively arranged at the upper side and the lower side of the thin film layer. The thin film layer contains a conductive powder coated with a ceramic packing, and is prepared by the conductive powder coated with the ceramic packing and a resin composition. The embedded capacitance material provided by the invention has low tensile modulus, high elongation rate, excellent strength and excellent impact resistance, and prevents a fragmentation phenomenon from appearing during a double-sided etching process or a drilling process of a circuit board; and at the same time, the embedded capacitance material has high dielectric constant, and also has a current leakage preventing effect.

This coating liquid for forming a Bi-based dielectric thin film showing paraelectric or ferroelectric property contains a composite metal oxide expressed by the formula: {Bi<4-x>, (La, B<1-z>)}(Ti<3-y>, A)O<12+alpha>(wherein A is a metal element such as Ge; B is a rare earth element except lanthanum or a metal element such as Ca or Sr; 0<=x<4, 0<=y<=0.3, 0 C01G 29/00 C01G 23/00 C01G 1/02 B05D 5/12 H01B 3/12 C04B 35/46 H01L 21/31 H01L 27/108 H01L 27/11 17 29 3 2005/3/11 1830811 2006/9/13 000000000 Tokyo Ohka Kogyo Co., Ltd. Japan Sato Yoshimi Takeuchi Yoshiyuki yang hongjun 11256 Japan 2004/3/11 069837/2004

The invention provides a dielectric ceramic composition having high relative dielectric constant and AC breakdown voltage, low dielectric loss, good temperature characteristic and good sintering characteristic. The dielectric ceramic composition is provided with a main ingredient expressed by a formula of (Ba1-x-y, Cax, Sry)m(Til-z-a, Zrz, Sna), a first auxiliary ingredient, a second auxiliary ingredient, and a third auxiliary ingredient. 0.03<=x<=0.30; 0.00<=y<=0.05; 0.02<z<=0.2; 0<=a<=0.2; 0.04<=z+a<0.3; 0.97<=m<=1.03. The first auxiliary ingredient is zinc oxide, the second auxiliary ingredient is at least one oxide of the La, Pr, Pm, Nd, Sm, Eu, Gd, and Y, and the third auxiliary ingredient is at least one oxide of A1, Ga, In, Mg, Cu, Ni, Co, Fe, and Si. Compared to the 100 wt% of the main ingredient, the first auxiliary ingredient is 0.45-10 wt%, the second auxiliary ingredient is more than 0.0 wt%, and is less than 0.3 wt% by taking the oxide for matrixing, and the third auxiliary ingredient is 0.02-1.5wt% by taking the oxide for matrixing.

The invention provides a preparation method of Barium Titanate nano-powder, which comprises the following steps that: soluble barium salt is added into H2O2 solution to be mixed continuously, the pH value of the solution is adjusted with ammonia water, and the mixed solution is held statically, filtered, washed and vacuum-dried to obtain a precursor BaO2. H2O2 powder; then the BaO2.H2O2 and H2TiO3 are mixed and ground, KOH and KNO3 are added to be used as a flux, then absolute ethyl alcohol is added for grinding, the ultrasonic treatment on the mixed ground powder is undertaken, and after being dried and removed ethanol, the mixture is dissolved with deionized water, centrifugally separated and washed with deionized water after being roasted and cooled; and finally the sample is put into thin HNO3 solution to be immersed so as to remove the foreign matters, and the sample is centrifugally separated, washed and dried to obtain the barium titanate powder with the granularity of about 15 to 40 nm. The barium titanate powder prepared with the method has the advantages of small power granularity, uniform particles, low roasting temperature, simple production process, safe production process, difficult accumulation of the product particles, high purity of the product, high production efficiency and low implementation cost, and can be widely used for the preparation of different inorganic nano functional materials.

A forming method of a semiconductor structure includes the following steps: providing a substrate; forming a high k gate medium layer on the surface of the substrate; forming a sacrificial layer on the surface of the high k gate medium layer; conducting defect passivation annealing on the high k gate medium layer, wherein the defect passivation annealing is carried out in an atmosphere lacking defect passivation ions, and the defect passivation ions enter the high k gate medium layer via the sacrificial layer during the defect passivation annealing process; removing the sacrificial layer; and forming a gate electrode layer on the surface of the high k gate medium layer. According to the method, a problem of dielectric relaxation of the high k gate medium layer is overcome, the density of the high k gate medium layer and the density of an interfacial layer are increased, and thus the electrical performance of a semiconductor structure formed by the method is improved.

The invention discloses a radio frequency coaxial connector assembly suitable for blind matching and capable of allowing insertion offset. The radio frequency coaxial connector assembly comprises an escapement connector, an optical hole connector and an adaptor; the escapement connector comprises an escapement outer conductor, an escapement inner conductor and an escapement insulator; the adaptorcomprises a circular tubular adaptor outer conductor, an adaptor inner conductor and two adaptor insulators, wherein the two adaptor insulators are mounted in two end inner holes of the adaptor outerconductor respectively; each adaptor insulator is a hollow cylinder with an inner hole; a plurality of blind holes which extend in the axial direction are uniformly distributed in the cylinder body inthe circumferential direction of each adaptor insulator; the blind holes of the two adaptor insulators are arranged oppositely and positioned in the inner sides of the two end inner holes of the adaptor outer conductor; and the adaptor inner conductor is mounted in the inner holes of the two adaptor insulators. By virtue of the radio frequency coaxial connector assembly, the impedance in the connector interconnection interface part can be matched mutually, relatively high axial and radial offset is allowed, radio frequency electrical performance is improved, and signal transmission quality isimproved.

The invention relates to a copolymer-sylvite composite film material possessing a high dielectric constant, and its preparation method. The method comprises the following steps: weighing and mixing a polyvinylidene fluoride-hexafluoropropene (PVDF-HFP) copolymer and the sylvite according to a designed mass ratio; ball-milling in a ball milling jar with ethanol as a medium to form mixed powder, and adding an organic solvent to the mixed powder to fully dissolve the powder to obtain a mixed solution; and uniformly dumping the mixed solution to a clean and flat glass sheet to make the mixed solution uniformly flow, and drying the glass sheet in a constant temperature box to finally prepare the copolymer-sylvite composite film material with the thickness of 50-150mum. The relative dielectric constant of the composite film material is high to 10<5>-10<6> at 1kHz. The copolymer-sylvite composite film material prepared in the invention has a wide application prospect, and can be applied to polymer dielectric films and the like.

Dielectric ceramic high in energy density in low electric fields and a preparing method thereof are disclosed. The chemical formula of the dielectric ceramic is (1-x)BaTi<3>-xBaSnO3, wherein the x is a mole ratio, and 0.03<=x<=0.15. The dielectric ceramic having high energy storage performance in low electric fields is prepared by the preparing method adopting solid synthesis. According to the dielectric ceramic and the method, components and process steps are simple, operation is easy and repeatability is good. The dielectric ceramic is mainly used for the fields of portable and wearable electronic devices having a high integrated level and a small size.

The invention discloses a thin film capacitor. A capacitor core comprises a composite film, a double-side metalized ZnAl film, and a metal spraying layer. The composite film and the double-side metalized ZnAl film are arranged in a staggered manner. The double-side metalized ZnAl film is evaporated on two side surfaces of the composite film. Moreover, the outer end of the capacitor core is provided with the metal spraying layer. The composite layer is made of the following raw materials: polyethylene glycol terephthalate, 2-chloro-3-nitrotoluene, silicon-contained polycarbonate resin, conductive black, barium titanate, chemical resistant modifier, acetone, heat resistant agent, flame retardant synergist, cerous nitrate, chloro-series fire retardant, antioxygen, 3-cyano-5-fluborophenylboronic acid, nanocrystal cellulose, silver oxide, lactate cobalt, ammonium tetrathiomolybdate, sodium borohydride and inorganic nanoparticles. Through employing the self-made composite thin film, the capacitor is small in size, is light in weight, and is good in self-healing performance. The capacitor employs the technology of ZnAl edge thickening evaporation, is excellent in electrical performance, and is high in reliability.

A curable organopolysiloxane composition containing a fluoroalkyl group is disclosed. The composition comprises: (A) an organopolysiloxane containing a fluoroalkyl group, having at least two alkenyl groups in a molecule, where 10 mol % or more of all substitution groups on the silicon atoms is a fluoroalkyl group, and the average degree of polymerization is less than 150; (B) an organohydrogen polysiloxane having at least two silicon-bonded hydrogen atoms in a molecule at an amount where the silicon-bonded hydrogen atoms in the component is 0.1 to 1.0 mol with regard to a total of 1 mol of the alkenyl groups in component (A); (C) an effective amount of a hydrosilylation reaction catalyst; and optionally, (D) a solvent. The composition generally has a high dielectric constant and favorable transparency. A cured product and applications of the composition and the cured product thereof are also disclosed.