Dielectric layer for embedded capacitance material, embedded capacitance material, preparation method and use of embedded capacitance material

Abstract

The invention relates to a dielectric layer for an embedded capacitance material and the embedded capacitance material. The dielectric layer is composed of a thin film layer with good flexibility and resin composition layers respectively arranged at the upper side and the lower side of the thin film layer. The thin film layer contains a conductive powder coated with a ceramic packing, and is prepared by the conductive powder coated with the ceramic packing and a resin composition. The embedded capacitance material provided by the invention has low tensile modulus, high elongation rate, excellent strength and excellent impact resistance, and prevents a fragmentation phenomenon from appearing during a double-sided etching process or a drilling process of a circuit board; and at the same time, the embedded capacitance material has high dielectric constant, and also has a current leakage preventing effect.

Description

technical field [0001] The invention relates to the technical field of capacitance embedding materials, in particular to a dielectric layer for embedding capacitance materials applied to printed circuit boards, embedding capacitance materials, a preparation method and applications thereof. Background technique [0002] With the development of electronic devices towards high functionality and miniaturization, the proportion of passive devices in electronic systems is increasing. For example, the number of passive components in a mobile phone is 20 times that of active components. At present, passive devices are mainly surface-mounted (such as discrete capacitor devices), which occupy a large amount of space on the substrate, and there are many interconnections and soldering points on the surface, which greatly improves the electrical performance and reliability of materials and systems. reduce. In order to provide an electronic system that is lighter, better in performance,...

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Problems solved by technology

[0010] The U.S. patent application US6693793 discloses a heat-resistant organic film as a support material in the middle, although it solves the problem of the strength of the embedding material (that is, solves the brittleness), but because the organic film with a low dielectric constant is used as the intermediate interlayer, The dielectric constant of the obtained embedding material is not high

[0011] Chinese patent CN102285168A uses a porous organic film and a ceramic filler compound as an intermediate layer to make an embedding material. Although it solves the problems of strength and toughness, it cannot further increase the dielectric constant of the embedding material to a greater extent.

However, this patent does not solve the problem of brittleness (poor strength) of the embedding material caused by the addition of conductive powder and a large amount of ceramic fillers

[0013] In view of the above problems, the present invention proposes a method that can not only improve the strength of the embedding material, but also greatly increase the dielectric constant of the embedding material, and prevent the increase of leakage current.

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