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56870 results about "Electric current" patented technology

An electric current is the rate of flow of electric charge past a point or region. An electric current is said to exist when there is a net flow of electric charge through a region. In electric circuits this charge is often carried by electrons moving through a wire. It can also be carried by ions in an electrolyte, or by both ions and electrons such as in an ionized gas (plasma).

Electrosurgical jaw structure for controlled energy delivery

A working end of a surgical instrument that carries first and second jaws for delivering energy to tissue. In a preferred embodiment, at least one jaw of the working end defines a tissue-engagement plane that contacts the targeted tissue. The cross-section of the engagement plane reveals that it defines a surface conductive portion that overlies a variably resistive matrix of a temperature-sensitive resistive material or a pressure-sensitive resistive material. An interior of the jaw carries a conductive material or electrode that is coupled to an Rf source and controller. In an exemplary embodiment, the variably resistive matrix can comprise a positive temperature coefficient (PTC) material, such as a ceramic, that is engineered to exhibit a dramatically increasing resistance (i.e., several orders of magnitude) above a specific temperature of the material. In use, the engagement plane will apply active Rf energy to captured tissue until the point in time that the variably resistive matrix is heated to its selected switching range. Thereafter, current flow from the conductive electrode through the engagement surface will be terminated due to the exponential increase in the resistance of variably resistive matrix to provide instant and automatic reduction of Rf energy application. Further, the variably resistive matrix can effectively function as a resistive electrode to thereafter conduct thermal energy to the engaged tissue volume. Thus, the jaw structure can automatically modulate the application of energy to tissue between active Rf heating and passive conductive heating of captured tissue to maintain a target temperature level.
Owner:ETHICON ENDO SURGERY INC

Jaw structure for electrosurgical instrument and method of use

An electrosurgical medical device and technique for creating thermal welds in engaged tissue that provides very high compressive forces. In one exemplary embodiment, at least one jaw of the instrument defines a tissue engagement plane carrying first and second surface portions that comprise (i) an electrically conductive material and (ii) a positive temperature coefficient (PTC) material having a selected increased resistance that differs at each selected increased temperature over a targeted treatment range. One type of PTC material is a doped ceramic that can be engineered to exhibit a selected positively sloped temperature-resistance curve over about 37° C. to 100° C. The 70° C. to 100° C. range can bracket a targeted “thermal treatment range” at which tissue welded can be accomplished. The engineered resistance of the PTC matrix at the upper end of the temperature range will terminate current flow through the matrix. In one mode of operation, the engagement plane cause ohmic heating within tissue from Rf energy delivery tissue PTC matrix is heated to exceed the treatment range. Thereafter, energy density in the engaged tissue will be modulated as the conductivity of the second portion hovers within the targeted treatment range to thereby provide optical tissue heating for purposes of tissue welding.
Owner:ETHICON ENDO SURGERY INC

Apparatus and method for creating, maintaining, and controlling a virtual electrode used for the ablation of tissue

The present invention provides an apparatus and a method for producing a virtual electrode within or upon a tissue to be treated with radio frequency alternating electric current, such tissues including but not limited to brain, liver, cardiac, prostate, breast, and vascular tissues and neoplasms. An apparatus in accordance with the present invention includes a source of super-cooled fluid for selectively providing super-cooled fluid to the target tissue to cause a temporary cessation of cellular or electrical activity, a supply of conductive or electrolytic fluid to be provided to the target tissue, and alternating current generator, and a processor for creating, maintaining, and controlling the ablation process by the interstitial or surficial delivery of the fluid to a tissue and the delivery of electric power to the tissue via the virtual electrode. A method in accord with the present invention includes delivering super-cooled fluid to the target tissue to cause a temporary cessation of cellular or electrical activity, evaluating whether the temporary cessation of cellular or electrical activity is the desired cessation of cellular or electrical activity, and if so, delivering a conductive fluid to the predetermined tissue ablation site for a predetermined time period, applying a predetermined power level of radio frequency current to the tissue, monitoring at least one of several parameters, and adjusting either the applied power and/or the fluid flow in response to the measured parameters.
Owner:MEDTRONIC INC

Electrochemical cell

A method for determining the concentration of a reduced (or oxidised) form of a redox species in an electrochemical cell of the kind comprising a working electrode and a counter electrode spaced from the working electrode by a predetermined distance, said method comprising the steps of: (1) applying an electric potential difference between the electrodes; (2) selecting the potential of the working electrode such that the rate of electro-oxidation of the reduced form (or electro-reduction of the oxidised form) of the species is diffusion controlled, (3) selecting the spacing between the working electrode and the counter electrode so that reaction products from the counter electrode arrive at the working electrode; (4) determining current as a function of time after application of the potential and prior to achievement of a steady state; (5) estimating the magnitude of the steady state current, and (6) obtaining from the change in current with time and the magnitude of the steady state current, a value indicative of the diffusion coefficient and/or of the concentration of the reduced form (or the oxidised form) of the species. Also disclosed is an apparatus for determining the concentration of a redox species in an electrochemical cell comprising: an electrochemical cell having a working electrode and a counter (or counter/reference) electrode, means for applying and electric potential difference between said electrodes, means for measuring the change in current with time, and characterised in that the working electrode is spaced from the counter electrode by less than 500 mum.
Owner:LIFESCAN INC

Power semiconductor devices and methods of manufacture

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.
Owner:SEMICON COMPONENTS IND LLC

Semiconductor light-emitting device and semiconductor light-emitting device

A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.
Owner:SAMSUNG ELECTRONICS CO LTD

Method for fabricating programmable memory array structures incorporating series-connected transistor strings

A three-dimensional flash memory array incorporates thin film transistors having a charge storage dielectric arranged in series-connected NAND strings to achieve a 4F2 memory cell layout. The memory array may be programmed and erased using only tunneling currents, and no leakage paths are formed through non-selected memory cells. Each NAND string includes two block select devices for respectively coupling one end of the NAND string to a global bit line, and the other end to a shared bias node. Pairs of NAND strings within a block share the same global bit line. The memory cells are preferably depletion mode SONOS devices, as are the block select devices. The memory cells may be programmed to a near depletion threshold voltage, and the block select devices are maintained in a programmed state having a near depletion mode threshold voltage. NAND strings on more than one layer may be connected to global bit lines on a single layer. By interleaving the NAND strings on each memory level and using two shared bias nodes per block, very little additional overhead is required for the switch devices at each end of the NAND strings. The NAND strings on different memory levels are preferably connected together by way of vertical stacked vias, each preferably connecting to more than one memory level. Each memory level may be produced with less than three masks per level.
Owner:SANDISK TECH LLC
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