The invention discloses a BaTiO3-based high
dielectric ceramic with a
positive temperature coefficient at a low temperature, and belongs to the field of
dielectric ceramic preparation. The BaTiO3-based high-
dielectric ceramic is formed by
sintering a substrate BaTiO3 and dopants MgO, XaOb, MnO2, RcOd, SiO2 and YeOf, the
molar ratio of BaTiO3: MgO: XaOb: MnO2: RcOd: SiO2: YeOf is 100: x1: x2: x3: x4: x5: x6, a
doping element X is at least one of Nb, W and Mo, a
doping element R is at least one of
rare earth elements La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Tm, Yb and Lu, and a
doping element Y is at least one of Fe, Co and Ni; a, b, c, d, e and f are
atomic ratio numbers. The BaTiO3-based dielectric ceramic of the
system has a
positive temperature coefficient at a low temperature, an ultrahigh dielectric constant between 4000 and 4600,
dielectric loss of about 1% and high dielectric property, can meet the application of MLCC (Multiplayer
Ceramic Chip Capacitors) and
wafer capacitors, remarkably reduces the product size, reduces the circuit board volume, and is beneficial to
miniaturization and lightweight design of electronic products.