1323 results about "Current mirror" patented technology

The invention discloses a power-on reset circuit, and relates to the technical field of integrated circuits, in order to eliminate static power consumption of the power-on reset circuit and reduce power consumption of the power-on reset circuit, the power-on reset circuit comprises a discharge delay circuit, a current mirror circuit and a buffer circuit; the discharge delay circuit comprises a capacitor and an NMOS (N-channel Metal Oxide Semiconductor) tube M4, and the NMOS tube M4 is used for discharging the capacitor; the current mirror image circuit comprises an NMOS tube M2, an NMOS tube M3 and a PMOS tube M9. The grid electrode of the NMOS tube M2 and the grid electrode of the PMOS tube M9 are respectively connected with the output end of the buffer circuit; the grid electrode of the NMOS tube M3 is respectively connected with the source electrode of the PMOS tube M9, the drain electrode of the NMOS tube M2 and the grid electrode of the NMOS tube M4; the current mirror image circuit is used for turning off the NMOS tube M2 after the reset signal is ended, and pulling up the drain electrode voltage of the NMOS tube M3 to the power supply voltage through the PMOS tube M9, so that the NMOS tube M3 enters a deep linear region, and a direct current path from the power supply to the ground in the current mirror image circuit is cut off; and the buffer circuit is used for outputting a reset signal according to the voltage change of the capacitor in the discharge delay circuit.

The invention relates to a high-precision temperature sensor based on complementary dynamic element matching and a zoom analog-to-digital converter and a working method, and belongs to the technical field of sensor improvement, and the sensor comprises an analog front end, an analog-to-digital converter, a digital rear end and a control logic. An improved chopping technology is adopted, and one clock signal is adopted to control two sub operational amplifiers, so that the output stability and precision of the analog front end are improved. A complementary dynamic element matching technology is utilized, errors caused by voltage drop at the two ends of a switch are reduced, the influence of channel charge injection is counteracted, a scaling type analog-to-digital converter design is provided for an analog-to-digital conversion part, and balance among power consumption, speed and precision is achieved. According to the method, a 10-bit successive approximation register analog-to-digital converter is used for measuring a numerical value and a change trend, and the numerical value and the change trend are analyzed, so that the expression effects of a current mirror structure, a transistor, a filter and the like are evaluated, the aging of the transistor is found in advance, and a clear direction is provided for future design improvement.

The invention discloses a low-output-ripple automatic-current-sharing interleaving buck converter and a control method thereof.The converter comprises a main power circuit and an auxiliary compensation circuit, and the main power circuit adopts two interleaving main branches to achieve voltage conversion and energy transmission; automatic current sharing of the circuit is realized through the integrated network switch module and PWM signal control; the auxiliary compensation circuit adopts a current mirror image compensation principle, and adjusts the magnitude of the compensation current by comparing the difference between the output current of the main power circuit and the reference current, so as to effectively suppress the output current ripple; the control method comprises the steps of output voltage monitoring, PI adjustment, duty ratio modulation and a complementary control mechanism, current ripple phase offset is ensured, and the system stability and efficiency are improved. Compared with the prior art, the method has the advantages that the complexity of a control system is reduced, the working efficiency is improved, the current ripples are effectively eliminated, and the method has relatively high practical value and popularization prospect.

In an example, a level shifter includes a low side having first and second inputs. The level shifter also includes a high side, where the high side has a latch having first and second terminals. The high side also includes a current comparator including first and second current mirrors. The high side includes isolation circuitry including first and second transistors, in which the first transistor has a first control terminal, the second transistor has a second control terminal, the first transistor is coupled between the first terminal and the first current mirror, the second transistor is coupled between the second terminal and the second current mirror, the first control terminal is coupled to the second current mirror, and the second control terminal is coupled to the first current mirror.

A level shifter includes: a low voltage domain configured to output non-overlapping first and second current pulses based on opposite edges of a logic input signal; and a high voltage domain comprising a latch and a current mirror circuit configured to mirror the non-overlapping first and second current pulses such that the latch is set when the first current pulse is active and reset when the second current pulse is active. The current mirror circuit includes a first mirroring path for the first current pulse and a second mirroring path for the second current pulse. The level shifter has a common mode slew current that is added to the non-overlapping first and second current pulses. The first mirroring path and the second mirroring path are cross-coupled such that the common mode slew current is reduced or cancelled before the non-overlapping first and second current pulses are input to the latch.

The present application discloses a computing-in-memory circuit, chip and electronic device, wherein the computing-in-memory circuit comprises: a resistive random access memory array, a clamping circuit, a current mirror and an analog-to-digital conversion circuit; the clamping circuit is connected between a signal input terminal and the resistive random access memory array, configured to input clamping voltage signal to the N resistive random access memories selected of the resistive random access memory array, wherein N is an integer and N≥2; the current mirror is connected between the resistive random access memory array and the analog-to-digital conversion circuit, configured to output convergence current to the analog-to-digital conversion circuit based on the N-way currents output from the N resistive random access memories selected; the analog-to-digital conversion circuit configured to convert the convergence current to a digital signal.

A radio frequency (RF) voltage limiter for a radio frequency identification (RFID) transponder is provided. The RF voltage limiter includes an envelope detector configured to track an envelope of a signal received at the antenna. The envelope detector has an output for providing an envelope signal. A peak detector is included and has an input coupled to the output of the envelope detector. The peak detector includes a current mirror having an input coupled to the output of the envelope detector, and an output configured to provide a control signal. A shunt circuit is coupled to provide an impedance to the antenna in response to the control signal. The impedance decreases with an increasing voltage of the control signal to limit a maximum voltage at the antenna. In another embodiment, a method is provided for limiting a RF voltage at the antenna.

A self-calibrating driver circuit (100, 300, 400, 500, 700) for a laser diode is disclosed. The circuit comprises a configurable current source (105, 305, 405, 505), a current mirror (115, 315, 415) configured to mirror a current from the configurable current source to a first transistor (120, 320, 420, 520, 720) and to a second transistor (125, 325, 425, 725), and a control circuit (140, 340, 440). The control circuit is configured to monitor a current through the first transistor at a first time, and to configure the current source based on the current through the first transistor to provide a desired current to the second transistor for driving the laser diode at a subsequent second time. A radiation-emitting device comprising one or more of the self-calibrating driver circuits and at least one radiation-emitting element is also disclosed.

The invention discloses a reference voltage generation module, a power supply system, an image sensor, equipment and a vehicle, the reference voltage generation module comprises a self-bias current source, a micro-current source, a first current mirror and a first reference circuit, the self-bias current source comprises the micro-current source used for generating bias current with a positive temperature coefficient, and the micro-current source is used for generating bias current with a negative temperature coefficient; the first current mirror is connected with the micro current source, and the first current mirror is of a low-voltage cascode structure and is used for performing mirror image output on the bias current; the first reference circuit is connected with the first current mirror, and the first reference circuit is used for generating a current with a negative temperature coefficient and generating a first reference voltage based on the bias current and the current with the negative temperature coefficient. The reference voltage generation module does not need to be compensated by a capacitor, so that the starting time and the response speed of the system are ensured.

A capacitance measurement circuit includes an analog front-end (AFE) circuit with current mirror circuits, a parasitic capacitor, an AD converter, an output shift register, and a controller. The controller disconnects a capacitor to be measured and connects one current mirror circuit to record an AFE output voltage VN collected at an inverting input terminal of the AD converter, then connects the capacitor to be measured to collect an AFE output voltage VP at a non-inverting input terminal of the AD converter, and converts a value of (VP−VN) into a first digital signal; determines, based on the value of the first digital signal, a connection number m of the current mirror circuits, controls the analog front-end circuit to connect m current mirror circuits, and repeat the steps to obtain a second digital signal; and shift the second digital signal based on the connection number m to obtain a capacitance measurement value.

The invention discloses a low-temperature drift reference circuit, which belongs to the technical field of electronic circuits and comprises a starting unit, a reference core unit and a base current absorption unit, the starting unit is connected with the reference core unit and the base current absorption unit, and the reference core unit is connected with the base current absorption unit. According to the low-temperature-drift reference circuit, the T-type resistor network is adopted, negative temperature coefficient voltage is compensated depending on a positive temperature coefficient voltage expansion item, and low-temperature-drift reference voltage can be obtained; the magnitude of the reference voltage can be adjusted by changing the proportional relation between the resistance type and the resistance value of the resistance network and the current mirror.

An example cascode voltage regulator circuit includes a first transistor coupled to an input voltage terminal and configured as a source follower to provide an output voltage at a source terminal, a second transistor coupled in series between the source terminal of the first transistor and an output terminal, the second transistor configured as a current limiter, and a current mirror coupled between respective first and second control terminals of the first and second transistors, the current mirror configured to receive a first current indicative of a source follower current flowing through the first transistor and to turn off the second transistor by coupling the first and second control terminals together responsive to the source follower current exceeding a threshold. In an example, the first transistor is a drain-extended NMOS device and the second transistor is a drain-extended PMOS device.

The invention discloses a current sampling circuit and a current sampling method based on a gallium nitride power tube, and belongs to the technical field of circuits. A temperature compensation module in the current sampling circuit can ensure that the on-resistance proportions of a silicon sampling tube and an upper tube / a lower tube are kept consistent in different temperature ranges; when the upper tube is conducted, the first temperature compensation module controls the first negative feedback module to generate a positive current or a negative current in proportion to a sampling current, the first current mirror image module outputs the positive current or the negative current to the sampling module, and the sampling module calculates the sampling current of the upper tube according to the positive current or the negative current; when the lower tube is switched on, the second temperature compensation module controls the second negative feedback module to generate a positive current or a negative current in proportion to the sampling current, the second current mirror image module outputs the positive current or the negative current to the sampling module, and the sampling module calculates the sampling current of the lower tube according to the positive current or the negative current. According to the invention, temperature compensation can be carried out, and bidirectional current sampling can be realized.

A current leakage limit circuit connected to a circuit with current leakage and a leakage compensation circuit includes a first current mirror with a first transistor and a second transistor and a current source connected to the first transistor. The second transistor is connected between the circuit and the leakage compensation circuit and limits a compensation current flowing between the circuit and the leakage compensation circuit. The current flowing from the current source through the first transistor limits the current flowing through the second transistor.

The invention provides a floating power supply, a circuit system and electronic equipment. The floating power supply comprises a voltage drop bias unit, a bias current source, a power supply transistor, a first voltage stabilizing transistor and a second voltage stabilizing transistor, the voltage drop bias unit carries out fixed voltage drop on an external input power supply according to the bias current of the bias current source to obtain a bias voltage and outputs the bias voltage; the power transistor follows the bias voltage to obtain a power supply voltage and outputs the power supply voltage to a load from a first end of the power transistor. The first voltage stabilizing transistor and the second voltage stabilizing transistor form a current mirror structure, and the width-to-length ratio of the first voltage stabilizing transistor and the second voltage stabilizing transistor is greater than 1, so that the load current flowing through the power supply transistor is at least doubled, and the area requirement on the power supply transistor is at least doubled, namely, the influence of power supply voltage jump on the bias of the power supply transistor is reduced; therefore, rapid stabilization of the power supply voltage can be realized through a current source with smaller output, and finally low-cost and low-power-consumption power supply voltage stabilization is realized.

A power converter for dynamically adjusting voltage headroom based on a current is provided. The power converter includes a high-side switch, a low-side switch, a sensor circuit, a current source, a mirror circuit, a reference voltage adjusting circuit and a control circuit. The sensor circuit senses a current flowing through a power receiving component to output a sensed current to a first terminal of a first transistor of a current mirror. A first terminal of the second transistor of the current mirror is connected to the current source. The reference voltage adjusting circuit sets a reference voltage according to a current from a node between the first terminal of the second transistor and the current source. The control circuit controls the high-side switch and the low-side switch according to the reference voltage.

In an example, a system includes an amplifier having an output stage configured to provide an output voltage, where the output stage includes a p-channel transistor and an n-channel transistor. The system includes a sense transistor having a gate coupled to a gate of the p-channel transistor, where the sense transistor is configured to sense a current of the p-channel transistor and produce a sense current. The system includes a current mirror coupled to the sense transistor and configured to provide the sense current to a gate of a control transistor, the control transistor having a source coupled to the gate of the p-channel transistor. The system includes a reference current source coupled to the control transistor and configured to provide a reference current. The control transistor is configured to adjust a gate current provided to the p-channel transistor based on comparing the sense current to the reference current.

The invention discloses a high-performance reference voltage implementation method and circuit. The method comprises the following steps: constructing a framework adaptive to low power supply voltage, and determining initial working parameters by selecting a conventional CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process device; a low reference voltage value generation module is designed, a low-voltage NMOS device in a sub-threshold region is matched with a current mirror and a resistance network to output accurate low voltage, and interference is suppressed. First-order and second-order temperature compensation is implemented, and the temperature stability of the reference voltage is improved by utilizing devices with different temperature characteristics and specific NMOS electric leakage characteristics at high temperature. An ultra-low power consumption OP is designed, a low-voltage NMOS and a high-voltage native device are combined, and a bias circuit is optimized. The circuit integrates a low reference voltage module, a first-order temperature compensation module, a second-order temperature compensation module, an ultra-low power consumption OP module and the like. Finally, the working power supply voltage as low as 1V, the power consumption smaller than 100nA and the excellent second-order temperature compensation effect in the full-temperature range are achieved, and stable and accurate reference voltage is provided for related circuits.

The invention belongs to the technical field of electronic circuits, and particularly relates to an oscillator circuit for a PWM controller. Comprising an oscillator module which comprises a feedback loop and a current detection circuit; the hiccup module is used for gating and outputting an input signal by a data selector according to the level of the input PWM logic control signal so as to control the on-off of a transmission gate, establishing a charging and discharging process and providing a delay starting function for the oscillator module; and the jittering frequency module outputs current sources Iref0 of different sizes by performing combined gating on a current source I'ref and current sources I1-I4, outputs four paths of current sources Iref1-Iref4 of different sizes through a current mirror array mirror image, and provides charging and discharging current for the oscillator module and the hiccup module. By dynamically adjusting the PWM frequency, the switching frequency is matched with the load requirement, the invalid switching frequency is reduced, and the power consumption is greatly reduced.

The invention discloses a negative voltage clamping circuit and method. The negative voltage clamping circuit comprises a current mirroring module which is used for providing a reference current Iref and generating a corresponding reference current according to a preset current proportion mirroring; the voltage detection module is connected with the current mirror module and the negative voltage input end of the chip and is used for detecting the voltage VS of the negative voltage input end; and the clamping control module is connected with the current mirroring module and the voltage detection module, and the clamping control module is configured to be switched on when the voltage VS of the negative voltage input end exceeds a preset clamping threshold value and clamp the voltage VS of the negative voltage input end within a preset range. According to the negative voltage clamping circuit, the change of the negative voltage input end can be monitored in real time, it is ensured that the clamping control module responds rapidly when the voltage exceeds a threshold value, the negative voltage is limited within a safe range, circuit damage or performance reduction caused by too low voltage is avoided, and therefore the stability and reliability of a chip are improved.

A CTAT circuit that generates a CTAT current. The circuit includes two SOI transistors of a first conductivity type arranged in a current mirror configuration where the gates of the two transistors and the back gate contact of one of the transistors is connected to the drain of the other transistor. The SOI transistor of the first conductivity type whose back gate contact is connected to the drain of the other SOI transistor of the first conductivity type is located in current path that carries a CTAT current. In some embodiments, the drains of the two transistors are each coupled to a drain of a respective one of a second pair of SOI transistors of a second conductivity type, where the second pair of SOI transistors are also configured in a current mirror configuration.

The invention discloses a low-power-consumption low-temperature-drift band-gap reference voltage source which comprises a VBE nonlinear term compensation circuit and an output voltage generation circuit, the VBE nonlinear term compensation circuit is matched with a bipolar transistor through an MOS tube current mirror image, the nonlinear temperature drift of output voltage is compensated, linearized VBE voltage is generated, and the output voltage generation circuit is connected with the VBE nonlinear term compensation circuit. And the output voltage generation circuit generates a voltage in direct proportion to absolute temperature through a differential pair structure, superposes the voltage with the linearized VBE voltage, and outputs a reference voltage. According to the low-power-consumption low-temperature-drift band-gap reference voltage source, temperature drift is compensated through the VBE nonlinear term compensation circuit, the output voltage generation circuit integrates signals to generate initial stable reference voltage, the temperature drift coefficient trimming circuit finely adjusts the temperature drift coefficient, and finally the reference voltage which is high in precision, low in temperature drift and good in consistency is output.

The invention is suitable for the technical field of integrated circuits, and provides a high-voltage operational amplifier. Comprising a biasing circuit, a first current mirror circuit, a first slew rate boosting circuit, a first gain circuit, a second gain circuit, a second current mirror circuit, an input stage circuit, an output stage circuit, a chopping switch circuit, a first high-voltage protection circuit, a third current mirror circuit, a fourth current mirror circuit, a second slew rate boosting circuit and a fifth current mirror circuit. And a sixth current mirror circuit and a second high-voltage protection circuit. The precision of the operational amplifier under the 36V high voltage can be improved.

The invention relates to the technical field of analog integrated circuits, and discloses an LDO (Low Dropout Regulator) frequency compensation circuit based on a voltage-controlled current source, which comprises an input differential amplification module, a power regulation module, a frequency compensation module and a feedback voltage division module, and is characterized in that the output end of the input differential amplification module is electrically connected with the input end of the frequency compensation module; the frequency compensation module comprises a voltage-controlled current source and a compensation capacitor C1, the compensation capacitor C1 is matched with the voltage-controlled current source to adjust the loop frequency response, through a multi-stage current mirror and a Miller compensation network, pole distribution is optimized in a targeted mode, the Miller effect of the compensation capacitor C1 is matched, the dominant pole frequency can be actively lowered, a dominant pole is made to be away from a high-frequency area, and the loop phase margin is guaranteed; the self-excited oscillation is fundamentally suppressed, and the output voltage is stable and free of fluctuation.

The invention discloses a reference current generating circuit and a related calibration method. The reference current generation circuit comprises a temperature detection circuit, an adjustable resistor, a current mirror and a calibration circuit. The temperature detection circuit is used for detecting the temperature of the reference current generation circuit so as to provide voltage; the adjustable resistor is used for generating reference current according to the voltage; the current mirror is used for generating an output current according to the reference current. The calibration circuit comprises a resistor, a comparator and a control circuit. The resistor is used for generating an output voltage according to the output current; the comparator is used for comparing the output voltage with a reference voltage to generate a comparison result; and the control circuit is used for sequentially generating a plurality of control signals to the adjustable resistor and determining a final control signal according to the comparison result.

The embodiment of the invention discloses a level shift circuit and a high-voltage half-bridge driving chip. The level shift circuit comprises a first high-voltage switch tube, a second high-voltage switch tube, a cross coupling module and a conversion module; the controlled end of the first high-voltage switch tube is connected with a setting signal; a reset signal is accessed to the controlled end of the second high-voltage switch tube; the cross coupling module comprises a first current mirror and a second current mirror, first current is connected to the first end of the first current mirror, second current is connected to the first end of the second current mirror, and the first current is larger than or equal to N times of the second current; the first and second of the conversion module are respectively connected with the first and second current mirrors through the first and second nodes, and output signals are output. The level shift circuit can filter common-mode noise so as to ensure the stability of an output signal, a large resistor or capacitor does not need to be arranged, delay is reduced, and the signal transmission speed is increased.

Provided is a potentiostat-based electrochemical sensor detection device. The device comprises: a digital-to-analog converter (DAC) configured to receive a digital signal from a waveform generator and digital logic and output an analog signal corresponding to a reference voltage; a control amplifier (CA) configured to receive the analog signal corresponding to the reference voltage and apply the reference voltage to a reference electrode (RE); a gain-boosting current mirror configured to copy a sensor current of an electrochemical sensor and output a copied sensor current; a transimpedance amplifier configured to convert the copied sensor current into a voltage signal; a low-pass filter configured to block a high-frequency band signal component of the voltage signal; and an analog-to-digital converter (ADC) configured to perform digital signal processing on a signal having passed through the low-pass filter, wherein at least one of the gain-boosting current mirror and the transimpedance amplifier employs a dynamic element matching (DEM) technique using a plurality of choppers and a plurality of DEM clock signals.

The invention provides a process weak correlation frequency adjustable anti-aliasing filter circuit which is characterized by comprising a current generation module, a current mirror module, a control voltage generation module and an MOSFET-C anti-aliasing filter module. The anti-aliasing filter circuit with the adjustable frequency has the remarkable advantages that the anti-aliasing filter circuit with the adjustable frequency can generate cut-off frequency linearly related to the frequency of an input clock signal, and the anti-aliasing filtering function with the adjustable frequency is achieved. In addition, the circuit can effectively reduce the influence of technological parameters on the cut-off frequency, has good circuit performance, and meanwhile, compared with a cut-off frequency adjusting method of an existing on-chip filter circuit integrated control loop, the circuit is simple in structure, small in introduction power consumption and low in cost. And the anti-aliasing filtering requirement of the ADC acquisition front end within the input clock signal frequency range of 10 kHz to 100 kHz can be met.

The invention provides a band-gap reference circuit for a low-voltage circuit, which comprises a clamping operational amplifier circuit for receiving an input voltage and outputting an amplified input voltage under the control of a bias voltage; the feedback adjustment circuit performs feedback adjustment on the amplified input voltage to obtain a feedback voltage; the current mirror circuit generates reference voltage and reference current according to the feedback voltage; the transistor circuit generates a positive / negative temperature coefficient current by using a reference voltage and generates an input voltage. The reference voltage output circuit generates and outputs a bandgap reference voltage using the reference current. The threshold voltage of a transistor in the circuit is reduced by using a substrate bias technology, the input node of the clamping operation amplification circuit is optimized, the minimum power supply voltage for working of the circuit is reduced, the loop is improved by using the feedback adjustment circuit, the power supply suppression capability is improved, and the stability of the output band-gap reference voltage is improved; the problems of how to improve the minimum power supply voltage of the band-gap reference circuit and how to optimize the power supply suppression effect are solved.

The invention provides a resistor resistance value high-precision measuring circuit. The resistor resistance value high-precision measuring circuit comprises a chip power supply end, a grounding end, a current mirror circuit, an operational amplifier circuit, a current starvation type oscillator circuit and a switched capacitor circuit, wherein the switched capacitor circuit is controlled by the output frequency of the current starvation type oscillator circuit and can be equivalent to a resistor with a resistance value related to the output frequency; an equivalent resistor and a to-be-measured resistor which is arranged outside the chip and is connected with the signal input port are driven by the current mirror image circuit, and two obtained voltages related to the to-be-measured resistor and the equivalent resistor are output to the operational amplifier circuit for comparison. According to the current hunger type oscillator circuit, accurate resistance value measurement can be achieved, the influence of non-idealities such as the working voltage, temperature drift and threshold drift of the high-precision resistance value measurement circuit on accurate measurement of the to-be-measured resistance value is small, and the circuit structure is simple.