1010 results about "Current mirror" patented technology

The invention relates to a high-precision temperature sensor based on complementary dynamic element matching and a zoom analog-to-digital converter and a working method, and belongs to the technical field of sensor improvement, and the sensor comprises an analog front end, an analog-to-digital converter, a digital rear end and a control logic. An improved chopping technology is adopted, and one clock signal is adopted to control two sub operational amplifiers, so that the output stability and precision of the analog front end are improved. A complementary dynamic element matching technology is utilized, errors caused by voltage drop at the two ends of a switch are reduced, the influence of channel charge injection is counteracted, a scaling type analog-to-digital converter design is provided for an analog-to-digital conversion part, and balance among power consumption, speed and precision is achieved. According to the method, a 10-bit successive approximation register analog-to-digital converter is used for measuring a numerical value and a change trend, and the numerical value and the change trend are analyzed, so that the expression effects of a current mirror structure, a transistor, a filter and the like are evaluated, the aging of the transistor is found in advance, and a clear direction is provided for future design improvement.

The invention discloses a low-output-ripple automatic-current-sharing interleaving buck converter and a control method thereof.The converter comprises a main power circuit and an auxiliary compensation circuit, and the main power circuit adopts two interleaving main branches to achieve voltage conversion and energy transmission; automatic current sharing of the circuit is realized through the integrated network switch module and PWM signal control; the auxiliary compensation circuit adopts a current mirror image compensation principle, and adjusts the magnitude of the compensation current by comparing the difference between the output current of the main power circuit and the reference current, so as to effectively suppress the output current ripple; the control method comprises the steps of output voltage monitoring, PI adjustment, duty ratio modulation and a complementary control mechanism, current ripple phase offset is ensured, and the system stability and efficiency are improved. Compared with the prior art, the method has the advantages that the complexity of a control system is reduced, the working efficiency is improved, the current ripples are effectively eliminated, and the method has relatively high practical value and popularization prospect.

The present application discloses a computing-in-memory circuit, chip and electronic device, wherein the computing-in-memory circuit comprises: a resistive random access memory array, a clamping circuit, a current mirror and an analog-to-digital conversion circuit; the clamping circuit is connected between a signal input terminal and the resistive random access memory array, configured to input clamping voltage signal to the N resistive random access memories selected of the resistive random access memory array, wherein N is an integer and N≥2; the current mirror is connected between the resistive random access memory array and the analog-to-digital conversion circuit, configured to output convergence current to the analog-to-digital conversion circuit based on the N-way currents output from the N resistive random access memories selected; the analog-to-digital conversion circuit configured to convert the convergence current to a digital signal.

A self-calibrating driver circuit (100, 300, 400, 500, 700) for a laser diode is disclosed. The circuit comprises a configurable current source (105, 305, 405, 505), a current mirror (115, 315, 415) configured to mirror a current from the configurable current source to a first transistor (120, 320, 420, 520, 720) and to a second transistor (125, 325, 425, 725), and a control circuit (140, 340, 440). The control circuit is configured to monitor a current through the first transistor at a first time, and to configure the current source based on the current through the first transistor to provide a desired current to the second transistor for driving the laser diode at a subsequent second time. A radiation-emitting device comprising one or more of the self-calibrating driver circuits and at least one radiation-emitting element is also disclosed.

A current leakage limit circuit connected to a circuit with current leakage and a leakage compensation circuit includes a first current mirror with a first transistor and a second transistor and a current source connected to the first transistor. The second transistor is connected between the circuit and the leakage compensation circuit and limits a compensation current flowing between the circuit and the leakage compensation circuit. The current flowing from the current source through the first transistor limits the current flowing through the second transistor.

A power converter for dynamically adjusting voltage headroom based on a current is provided. The power converter includes a high-side switch, a low-side switch, a sensor circuit, a current source, a mirror circuit, a reference voltage adjusting circuit and a control circuit. The sensor circuit senses a current flowing through a power receiving component to output a sensed current to a first terminal of a first transistor of a current mirror. A first terminal of the second transistor of the current mirror is connected to the current source. The reference voltage adjusting circuit sets a reference voltage according to a current from a node between the first terminal of the second transistor and the current source. The control circuit controls the high-side switch and the low-side switch according to the reference voltage.

The invention discloses a high-performance reference voltage implementation method and circuit. The method comprises the following steps: constructing a framework adaptive to low power supply voltage, and determining initial working parameters by selecting a conventional CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process device; a low reference voltage value generation module is designed, a low-voltage NMOS device in a sub-threshold region is matched with a current mirror and a resistance network to output accurate low voltage, and interference is suppressed. First-order and second-order temperature compensation is implemented, and the temperature stability of the reference voltage is improved by utilizing devices with different temperature characteristics and specific NMOS electric leakage characteristics at high temperature. An ultra-low power consumption OP is designed, a low-voltage NMOS and a high-voltage native device are combined, and a bias circuit is optimized. The circuit integrates a low reference voltage module, a first-order temperature compensation module, a second-order temperature compensation module, an ultra-low power consumption OP module and the like. Finally, the working power supply voltage as low as 1V, the power consumption smaller than 100nA and the excellent second-order temperature compensation effect in the full-temperature range are achieved, and stable and accurate reference voltage is provided for related circuits.

The invention belongs to the technical field of electronic circuits, and particularly relates to an oscillator circuit for a PWM controller. Comprising an oscillator module which comprises a feedback loop and a current detection circuit; the hiccup module is used for gating and outputting an input signal by a data selector according to the level of the input PWM logic control signal so as to control the on-off of a transmission gate, establishing a charging and discharging process and providing a delay starting function for the oscillator module; and the jittering frequency module outputs current sources Iref0 of different sizes by performing combined gating on a current source I'ref and current sources I1-I4, outputs four paths of current sources Iref1-Iref4 of different sizes through a current mirror array mirror image, and provides charging and discharging current for the oscillator module and the hiccup module. By dynamically adjusting the PWM frequency, the switching frequency is matched with the load requirement, the invalid switching frequency is reduced, and the power consumption is greatly reduced.

The invention discloses a negative voltage clamping circuit and method. The negative voltage clamping circuit comprises a current mirroring module which is used for providing a reference current Iref and generating a corresponding reference current according to a preset current proportion mirroring; the voltage detection module is connected with the current mirror module and the negative voltage input end of the chip and is used for detecting the voltage VS of the negative voltage input end; and the clamping control module is connected with the current mirroring module and the voltage detection module, and the clamping control module is configured to be switched on when the voltage VS of the negative voltage input end exceeds a preset clamping threshold value and clamp the voltage VS of the negative voltage input end within a preset range. According to the negative voltage clamping circuit, the change of the negative voltage input end can be monitored in real time, it is ensured that the clamping control module responds rapidly when the voltage exceeds a threshold value, the negative voltage is limited within a safe range, circuit damage or performance reduction caused by too low voltage is avoided, and therefore the stability and reliability of a chip are improved.

A CTAT circuit that generates a CTAT current. The circuit includes two SOI transistors of a first conductivity type arranged in a current mirror configuration where the gates of the two transistors and the back gate contact of one of the transistors is connected to the drain of the other transistor. The SOI transistor of the first conductivity type whose back gate contact is connected to the drain of the other SOI transistor of the first conductivity type is located in current path that carries a CTAT current. In some embodiments, the drains of the two transistors are each coupled to a drain of a respective one of a second pair of SOI transistors of a second conductivity type, where the second pair of SOI transistors are also configured in a current mirror configuration.

The invention discloses a low-power-consumption low-temperature-drift band-gap reference voltage source which comprises a VBE nonlinear term compensation circuit and an output voltage generation circuit, the VBE nonlinear term compensation circuit is matched with a bipolar transistor through an MOS tube current mirror image, the nonlinear temperature drift of output voltage is compensated, linearized VBE voltage is generated, and the output voltage generation circuit is connected with the VBE nonlinear term compensation circuit. And the output voltage generation circuit generates a voltage in direct proportion to absolute temperature through a differential pair structure, superposes the voltage with the linearized VBE voltage, and outputs a reference voltage. According to the low-power-consumption low-temperature-drift band-gap reference voltage source, temperature drift is compensated through the VBE nonlinear term compensation circuit, the output voltage generation circuit integrates signals to generate initial stable reference voltage, the temperature drift coefficient trimming circuit finely adjusts the temperature drift coefficient, and finally the reference voltage which is high in precision, low in temperature drift and good in consistency is output.

The invention is suitable for the technical field of integrated circuits, and provides a high-voltage operational amplifier. Comprising a biasing circuit, a first current mirror circuit, a first slew rate boosting circuit, a first gain circuit, a second gain circuit, a second current mirror circuit, an input stage circuit, an output stage circuit, a chopping switch circuit, a first high-voltage protection circuit, a third current mirror circuit, a fourth current mirror circuit, a second slew rate boosting circuit and a fifth current mirror circuit. And a sixth current mirror circuit and a second high-voltage protection circuit. The precision of the operational amplifier under the 36V high voltage can be improved.

The invention relates to the technical field of analog integrated circuits, and discloses an LDO (Low Dropout Regulator) frequency compensation circuit based on a voltage-controlled current source, which comprises an input differential amplification module, a power regulation module, a frequency compensation module and a feedback voltage division module, and is characterized in that the output end of the input differential amplification module is electrically connected with the input end of the frequency compensation module; the frequency compensation module comprises a voltage-controlled current source and a compensation capacitor C1, the compensation capacitor C1 is matched with the voltage-controlled current source to adjust the loop frequency response, through a multi-stage current mirror and a Miller compensation network, pole distribution is optimized in a targeted mode, the Miller effect of the compensation capacitor C1 is matched, the dominant pole frequency can be actively lowered, a dominant pole is made to be away from a high-frequency area, and the loop phase margin is guaranteed; the self-excited oscillation is fundamentally suppressed, and the output voltage is stable and free of fluctuation.

Provided is a potentiostat-based electrochemical sensor detection device. The device comprises: a digital-to-analog converter (DAC) configured to receive a digital signal from a waveform generator and digital logic and output an analog signal corresponding to a reference voltage; a control amplifier (CA) configured to receive the analog signal corresponding to the reference voltage and apply the reference voltage to a reference electrode (RE); a gain-boosting current mirror configured to copy a sensor current of an electrochemical sensor and output a copied sensor current; a transimpedance amplifier configured to convert the copied sensor current into a voltage signal; a low-pass filter configured to block a high-frequency band signal component of the voltage signal; and an analog-to-digital converter (ADC) configured to perform digital signal processing on a signal having passed through the low-pass filter, wherein at least one of the gain-boosting current mirror and the transimpedance amplifier employs a dynamic element matching (DEM) technique using a plurality of choppers and a plurality of DEM clock signals.

The invention provides a process weak correlation frequency adjustable anti-aliasing filter circuit which is characterized by comprising a current generation module, a current mirror module, a control voltage generation module and an MOSFET-C anti-aliasing filter module. The anti-aliasing filter circuit with the adjustable frequency has the remarkable advantages that the anti-aliasing filter circuit with the adjustable frequency can generate cut-off frequency linearly related to the frequency of an input clock signal, and the anti-aliasing filtering function with the adjustable frequency is achieved. In addition, the circuit can effectively reduce the influence of technological parameters on the cut-off frequency, has good circuit performance, and meanwhile, compared with a cut-off frequency adjusting method of an existing on-chip filter circuit integrated control loop, the circuit is simple in structure, small in introduction power consumption and low in cost. And the anti-aliasing filtering requirement of the ADC acquisition front end within the input clock signal frequency range of 10 kHz to 100 kHz can be met.

A filter stage system comprising a continuous-time baseband filter comprising a feedback loop employing at least one first impedance node and at least one second impedance node, wherein the at least one first impedance node has a higher impedance than the at least one second impedance node, and wherein the at least one first impedance node provides a dominant pole and the at least one second impedance node provides a non-dominant pole, and wherein the continuous-time baseband filter generates a filtered current, and a mirror component mirrors the filtered current to an output.

Techniques and apparatus for supplying power with offset voltage generation are provided. One example power supply circuit generally includes a first transistor including a source coupled to an input voltage (Vin) node and a drain coupled to an output voltage (Vout) node, a second transistor including a drain coupled to a gate of the first transistor, a third transistor including a drain coupled to the drain of the second transistor and to the gate of the first transistor, where a source of the third transistor is coupled to a reference potential node of the power supply circuit, an amplifier including a first input coupled to a reference voltage (Vref) node and an output coupled to a gate of the third transistor, and a voltage offset circuit coupled between the gate of the first transistor and a gate of the second transistor.

Provided in the present invention are a current mirror circuit, a multi-channel LED drive circuit and a drive system. The current mirror circuit comprises a first mirroring transistor, which generates a first bias voltage on the basis of a reference current; an independent control module, which is connected between a gate of the first mirroring transistor and a gate of a second mirroring transistor and, on the basis of an enable signal, turns on or off the second mirroring transistor, wherein during turning on, after the gate voltage of the second mirroring transistor is pulled to being consistent with the first bias voltage, a path between the gate of the first mirroring transistor and the gate of the second mirroring transistor is turned on, and during turning off, after the path between the gate of the first mirroring transistor and the gate of the second mirroring transistor is cut off, the second mirroring transistor is turned off; and a second mirroring transistor, which is controlled by an output signal of the independent control module and performs mirroring amplification on the reference current, so as to obtain an output current. Without the need to use multiple mirror current sources or provide an operational amplifier circuit as a buffer, the present invention allows for low crosstalk between control operations of multiple LED constant-current drive circuits.

The utility model provides a constant current source generation circuit, a row driving circuit, a driving chip, a display panel and a device. The constant current source generation circuit comprises a reference current generation unit used for switching an adjustment mode of a reference current according to a control signal, and generating and outputting the reference current with an adjustable current value according to the determined adjustment mode, the adjustment mode comprising determining the reference current according to a reference voltage and an external resistor or determining the reference current according to a built-in current source; the driving unit comprises a first current mirror group, is connected with the reference current generating unit and is used for outputting driving voltage and bias voltage of the first current mirror group; and the channel current output unit comprises a second current mirror group, the first current mirror group and the second current mirror group are matched to form a current mirror, the driving voltage and the bias voltage are provided for the second current mirror group, and the current mirror is used for carrying out mirror image processing on the reference current so as to output constant current source channel current. According to the invention, the current value adjusting range of the constant current source channel current is improved.

An input is coupled to a cathode of a laser diode having its anode coupled to a high-voltage-supply, with a cascoded current mirror having an input and output branches. The input branch is coupled between the high-voltage-supply and a sense resistor coupled to the input. The output branch is coupled between the high-voltage-supply and an output. A sense resistance is coupled between the output and ground, and includes a diode-coupled transistor coupled to the output and a resistor coupled between the diode-coupled transistor and ground. The input branch generates a current proportional to a voltage across the laser diode, and the output branch generates a mirrored current proportional to the current proportional to the voltage across the laser diode. A voltage proportional to the voltage across the laser diode is generated by the mirrored current flowing through the sense resistance. A comparison circuit compares this voltage to a threshold.

The embodiment of the invention discloses a temperature compensation circuit. The control ends of the first transistor, the second transistor, the third transistor and the fourth transistor in the current mirror are coupled. The currents of the output ends of the second transistor to the fourth transistor are all proportional to the current of the output end of the first transistor. A first resistor in the first branch is connected with the output end of the second transistor. And a second resistor in the second branch is connected with the output end of the third transistor. The temperature coefficients of the first resistor and the second resistor are different. The first input end of the amplifier is connected with the output end of the first transistor; the output end of the amplifier is connected with the control end of the first transistor. The two input ends of the comparator respectively obtain the first voltage output by the output end of the second transistor and the second voltage output by the output end of the third transistor and compare the first voltage and the second voltage. And the switching module is connected with the output end of the comparator, and outputs the first voltage and the second voltage to the second input end of the amplifier after proportionally weighting the first voltage and the second voltage.

The invention discloses a low-voltage cascode NMOS (N-channel Metal Oxide Semiconductor) current mirror circuit which comprises a basic current mirror circuit, a biasing circuit and an operational amplifier feedback network, the basic current mirror circuit is used for forming a current mirror by adopting an NMOS (N-channel metal oxide semiconductor) transistor pair, and generating a corresponding output current IOUT after mirroring the received reference current IIN; the bias circuit is used for providing bias voltage for the basic current mirror circuit; the operational amplifier feedback network is used for forming a closed-loop feedback network of the basic current mirror circuit through the operational amplifier, so that the voltage of the input end of the basic current mirror circuit is equal to the voltage of the output end of the basic current mirror circuit. According to the invention, the operational amplifier is introduced to form a closed loop feedback network, so that the potentials of the input / output branches of the basic current mirror circuit are strictly matched, and the problem that the mirror image precision of a traditional structure is reduced due to drain electrode voltage mismatch is solved.

The invention belongs to the technical field of electronic circuits, and provides a driving circuit for current regulation and control and a negative voltage charge pump circuit. The driving circuit comprises a soft start module, a control module, a driving module and a current mirror module. The control module is respectively connected with the soft start module, the driving module and a source electrode of a fourth power tube in the charge pump circuit, and the current mirror module is respectively connected with the soft start module and the driving module. The driving module is used for being connected with a grid electrode of a first power tube, a grid electrode of a second power tube, a grid electrode of a third power tube and a grid electrode of a fourth power tube in the charge pump circuit. The driving circuit provided by the invention can ensure that the current flowing through the third power tube in the initial stage of soft start is relatively small, so that the safety of the charge pump circuit is ensured; the current flowing through the third power tube is gradually increased, so that the output voltage of the charge pump circuit can be ensured to reach the target voltage after the soft start is finished, and the charge pump circuit can work normally.

A low dropout regulator includes output terminal circuit and amplifier. The output terminal circuit is configured to generate output voltage according to input voltage and is configured to generate feedback voltage according to the output voltage. The amplifier is configured to generate control voltage to the output terminal circuit according to reference voltage and the feedback voltage, so as to adjust the output voltage, wherein the amplifier includes input stage circuit, current mirror circuit and filter circuit. The input stage circuit is configured to receive the reference voltage and the feedback voltage to generate a differential output. The filter circuit is configured to filter the input voltage to generate dependent current related to noise of the input voltage on the current mirror circuit, wherein the current mirror circuit is configured to output the control voltage according to the differential output and the dependent current.

The invention relates to the technical field of DRAM (Dynamic Random Access Memory) circuit design, in particular to a sense amplifier based on flip point and current mirror compensation, a reading circuit and a chip. The invention designs a sensitive amplifier based on flip point and current mirror compensation. The sensitive amplifier comprises 11 NMOS (N-channel Metal Oxide Semiconductor) tubes M1-M11 and two PMOS (P-channel Metal Oxide Semiconductor) tubes P1-P2. Corresponding control logic is provided in cooperation with the provided sensitive amplifier, so that a pre-charging stage, an offset elimination stage, an offset compensation stage, a charge sharing and reference voltage amplification stage and an induction amplification stage are designed when the sensitive amplifier reads the DRAM storage unit. The sensitive amplifier provided by the invention has the advantages that the number of elements is small, the circuit area is not greatly increased, the high sensing yield is ensured, the offset voltage index is greatly reduced, and the reading speed is increased.

The invention discloses an overvoltage protection circuit and method. The circuit comprises a sampling circuit, a current mirror circuit, a charging circuit and a comparator circuit, the sampling circuit is used for sampling the voltage of the voltage detection end to obtain a sampled voltage; the current mirror circuit is used for scaling down the sampling voltage and charging the charging circuit; and the comparator circuit is used for detecting the voltage of the charging circuit and sending an overvoltage protection signal when determining that the charging voltage is greater than a preset overvoltage protection threshold value. According to the overvoltage protection circuit, the current flowing through the first capacitor is scaled down through the current mirror by the current mirror circuit, then the second capacitor is charged by the scaled-down current, and when the voltage on the capacitor reaches the threshold value, overvoltage protection is triggered. The voltage sampling network is a capacitor and has no static power consumption. And the capacitor can be integrated into the chip, so that the system integration level can be effectively improved.

Methods, systems, and devices for devices and techniques to modify a clock signal are described. A memory system may include a delay adjustment circuit coupled with a clock signal path to compensate for changes in the delay of a clock signal due to fluctuations in a supply voltage. The delay adjustment circuit may include a current mirror, a first compensation component coupled with the clock signal path, and a second compensation component coupled with the clock signal path. The current mirror may be configured to output, based on the supply voltage, a first control signal to the first compensation component and a second control signal to the second compensation component. The compensation components may be configured to modify the clock signal along the clock signal path based on the received control signals.

Disclosed in the present invention are a short-circuit current feedback limiting output stage control circuit and a use thereof. The output stage control circuit comprises a P-type control circuit for controlling a PMOS output transistor in a Class AB output stage and an N-type control circuit for controlling an NMOS output transistor in the Class AB output stage; the P-type control circuit comprises a first current mirror module used for mirroring output stage current of the PMOS output transistor, a first detection resistor used for collecting the output stage current of the PMOS output transistor, a first amplifier module used for generating a first feedback current on the basis of the output stage current of the PMOS output transistor mirrored by the first current mirror module, a first switch threshold module used for controlling the working state of the first amplifier module and a first bias circuit used for providing a first bias current; and the P-type control circuit outputs the first feedback current to the PMOS output transistor. According to the technical solution, the change trend of short-circuit current at different temperatures can be adjusted while the loop stability is ensured.

The present invention discloses a low-mismatch dynamic transconductance subsampling charge pump, comprising a floating capacitor bias unit, a switch unit, and a transconductance unit. The floating capacitor bias unit is connected to the transconductance unit, configured to store charge and generate a voltage signal to provide a potential for the transconductance unit. The switch unit is connected to the transconductance unit, configured to control the charging and discharging of the transconductance unit according to an input switching voltage. The transconductance unit is configured to convert the differential voltage into a charge and discharge current. The low-mismatch dynamic transconductance subsampling charge pump provided by the present invention reduces the mismatch caused by current mirror copying. Furthermore, the dynamic bias provided by the capacitor reduces the transconductance of the input transistor, thereby reducing noise in the subsampling charge pump and improving circuit performance.

The application discloses a kind of nonvolatile memory-based pulse neuron circuit, it is related to the technical field of pulse neural network.The nonvolatile memory-based pulse neuron circuit includes: voltage dividing resistor network, current mirror circuit and MRAM pulse neuron module with temperature accumulation effect;Wherein, the voltage dividing resistor network receives target synapse array pulse signal and carries out voltage dividing processing to the target synapse array pulse signal, generates voltage dividing signal;The current mirror circuit is connected with the voltage dividing resistor network, and the current signal of the MRAM pulse neuron module is output according to the voltage dividing signal adaptation;The MRAM pulse neuron module is connected with the current mirror circuit, and the current signal is accumulated according to the temperature, and when temperature accumulation reaches threshold temperature, emits pulse signal.