622 results about "Current mirror" patented technology

The present application discloses a computing-in-memory circuit, chip and electronic device, wherein the computing-in-memory circuit comprises: a resistive random access memory array, a clamping circuit, a current mirror and an analog-to-digital conversion circuit; the clamping circuit is connected between a signal input terminal and the resistive random access memory array, configured to input clamping voltage signal to the N resistive random access memories selected of the resistive random access memory array, wherein N is an integer and N≥2; the current mirror is connected between the resistive random access memory array and the analog-to-digital conversion circuit, configured to output convergence current to the analog-to-digital conversion circuit based on the N-way currents output from the N resistive random access memories selected; the analog-to-digital conversion circuit configured to convert the convergence current to a digital signal.

The invention discloses a negative voltage clamping circuit and method. The negative voltage clamping circuit comprises a current mirroring module which is used for providing a reference current Iref and generating a corresponding reference current according to a preset current proportion mirroring; the voltage detection module is connected with the current mirror module and the negative voltage input end of the chip and is used for detecting the voltage VS of the negative voltage input end; and the clamping control module is connected with the current mirroring module and the voltage detection module, and the clamping control module is configured to be switched on when the voltage VS of the negative voltage input end exceeds a preset clamping threshold value and clamp the voltage VS of the negative voltage input end within a preset range. According to the negative voltage clamping circuit, the change of the negative voltage input end can be monitored in real time, it is ensured that the clamping control module responds rapidly when the voltage exceeds a threshold value, the negative voltage is limited within a safe range, circuit damage or performance reduction caused by too low voltage is avoided, and therefore the stability and reliability of a chip are improved.

A filter stage system comprising a continuous-time baseband filter comprising a feedback loop employing at least one first impedance node and at least one second impedance node, wherein the at least one first impedance node has a higher impedance than the at least one second impedance node, and wherein the at least one first impedance node provides a dominant pole and the at least one second impedance node provides a non-dominant pole, and wherein the continuous-time baseband filter generates a filtered current, and a mirror component mirrors the filtered current to an output.

Provided in the present invention are a current mirror circuit, a multi-channel LED drive circuit and a drive system. The current mirror circuit comprises a first mirroring transistor, which generates a first bias voltage on the basis of a reference current; an independent control module, which is connected between a gate of the first mirroring transistor and a gate of a second mirroring transistor and, on the basis of an enable signal, turns on or off the second mirroring transistor, wherein during turning on, after the gate voltage of the second mirroring transistor is pulled to being consistent with the first bias voltage, a path between the gate of the first mirroring transistor and the gate of the second mirroring transistor is turned on, and during turning off, after the path between the gate of the first mirroring transistor and the gate of the second mirroring transistor is cut off, the second mirroring transistor is turned off; and a second mirroring transistor, which is controlled by an output signal of the independent control module and performs mirroring amplification on the reference current, so as to obtain an output current. Without the need to use multiple mirror current sources or provide an operational amplifier circuit as a buffer, the present invention allows for low crosstalk between control operations of multiple LED constant-current drive circuits.

The invention discloses a low-voltage cascode NMOS (N-channel Metal Oxide Semiconductor) current mirror circuit which comprises a basic current mirror circuit, a biasing circuit and an operational amplifier feedback network, the basic current mirror circuit is used for forming a current mirror by adopting an NMOS (N-channel metal oxide semiconductor) transistor pair, and generating a corresponding output current IOUT after mirroring the received reference current IIN; the bias circuit is used for providing bias voltage for the basic current mirror circuit; the operational amplifier feedback network is used for forming a closed-loop feedback network of the basic current mirror circuit through the operational amplifier, so that the voltage of the input end of the basic current mirror circuit is equal to the voltage of the output end of the basic current mirror circuit. According to the invention, the operational amplifier is introduced to form a closed loop feedback network, so that the potentials of the input / output branches of the basic current mirror circuit are strictly matched, and the problem that the mirror image precision of a traditional structure is reduced due to drain electrode voltage mismatch is solved.

A low dropout regulator includes output terminal circuit and amplifier. The output terminal circuit is configured to generate output voltage according to input voltage and is configured to generate feedback voltage according to the output voltage. The amplifier is configured to generate control voltage to the output terminal circuit according to reference voltage and the feedback voltage, so as to adjust the output voltage, wherein the amplifier includes input stage circuit, current mirror circuit and filter circuit. The input stage circuit is configured to receive the reference voltage and the feedback voltage to generate a differential output. The filter circuit is configured to filter the input voltage to generate dependent current related to noise of the input voltage on the current mirror circuit, wherein the current mirror circuit is configured to output the control voltage according to the differential output and the dependent current.

Methods, systems, and devices for devices and techniques to modify a clock signal are described. A memory system may include a delay adjustment circuit coupled with a clock signal path to compensate for changes in the delay of a clock signal due to fluctuations in a supply voltage. The delay adjustment circuit may include a current mirror, a first compensation component coupled with the clock signal path, and a second compensation component coupled with the clock signal path. The current mirror may be configured to output, based on the supply voltage, a first control signal to the first compensation component and a second control signal to the second compensation component. The compensation components may be configured to modify the clock signal along the clock signal path based on the received control signals.

The application discloses a kind of nonvolatile memory-based pulse neuron circuit, it is related to the technical field of pulse neural network.The nonvolatile memory-based pulse neuron circuit includes: voltage dividing resistor network, current mirror circuit and MRAM pulse neuron module with temperature accumulation effect;Wherein, the voltage dividing resistor network receives target synapse array pulse signal and carries out voltage dividing processing to the target synapse array pulse signal, generates voltage dividing signal;The current mirror circuit is connected with the voltage dividing resistor network, and the current signal of the MRAM pulse neuron module is output according to the voltage dividing signal adaptation;The MRAM pulse neuron module is connected with the current mirror circuit, and the current signal is accumulated according to the temperature, and when temperature accumulation reaches threshold temperature, emits pulse signal.

The invention discloses a current mirror circuit for compensating a current source to be calibrated, which comprises a compensating current source, a current mirror and a voltage unit, and is characterized in that the compensating current source is used for providing compensating current to the input end of the current mirror; the current mirror is used for outputting corresponding mirror current at the output end of the current mirror according to the compensation current, and compensating the current source Iu to be corrected through the mirror current; the voltage unit is used for providing bias voltage for the current mirror and maintaining the voltages of the input end and the output end of the current mirror to be equal. According to the current source calibration circuit, the voltage of the input end and the voltage of the output end of the current mirror are kept equal through the voltage unit, so that the influence of the MOS channel length modulation effect can be avoided, accurate copying of the current is achieved, and the accuracy of the current source calibration process is improved.

A circuit for reducing a temperature-induced frequency drift in a voltage to current (V2I) converter based voltage-controlled oscillator (VCO) for at least one wide band phase-locked loop (PLL), the circuit includes a V2I resistor node of the V2I converter, the V2I resistor node being at one end of a resistor, the VCO, and a current controlled oscillator (CCO), and the circuit is configured to provide a fixed offset current to the V2I resistor node to cause at least one V2I output current to have a value conversely proportional to absolute temperature (CTAT), the at least one V2I output current being output by the V2I converter, and mirror the at least one V2I output current to the CCO to reduce the temperature-induced frequency drift at a lower frequency band of the VCO.

A power semiconductor device includes at least one power semiconductor element having an emitter terminal through which an emitter current flows and a sense terminal through which a sense current proportional to the emitter current flows, and a first current mirror circuit. The sense terminal is connected to an output terminal of the first current mirror circuit, and an input terminal of the first current mirror circuit is connected to a first current source.

Disclosed are a bootstrap control circuit and a voltage converting device. The bootstrap control circuit includes a current mirror, a diode string, a switch, a control voltage generator and a first transistor. The current mirror, based on an input voltage, mirrors a bias current to generate a mirror current. The diode string is coupled between the current mirror and a reference voltage end. The switch has a first end coupled to the diode string, a control end of the switch receives a first control voltage, a second end of the switch provides a second control voltage. The first transistor, based on the input voltage, generates an output voltage according to the second control voltage.

According to one embodiment, a drive detection device includes: a first terminal; a second terminal; a first transistor having a first end connected to the first terminal, a second end connected to a first node, and a control end connected to the second terminal; a second transistor having a first end connected to the second terminal, a second end connected to a second node, and a control end connected to the first terminal; a first current mirror circuit having an input end connected to the first node and an output end connected to the second node; a current source having an input end connected to the second node; and a third transistor having a control end connected to the second node.

The application discloses a kind of LDO circuits, including operational amplifier, voltage division sampling circuit and power tube that are electrically connected with each other, wherein, it further includes an overshoot adjusting circuit, which is connected with operational amplifier, including capacitor, first MOS tube, second MOS tube and first mirror unit, one end of capacitor is connected with power supply, the other end is connected with the grid of first MOS tube, first mirror unit is commonly connected, the source and drain of first MOS tube are connected with operational amplifier, the source of second MOS tube is connected with power supply, an external voltage is input to the grid of second MOS tube, the drain of second MOS tube is connected with first mirror unit, and first mirror unit mirrors the current on the circuit of second MOS tube to the circuit on capacitor.The LDO circuit of the application smoothly solves the problem of overshoot of output voltage during power-on process, prevents the damage of circuit device due to voltage overshoot during operation, and improves the reliability of the entire circuit.

The application discloses a current regulating circuit, a first control module is arranged between the gate of a first PMOS and the gate of a second PMOS, when receiving a first closing instruction, the first control module controls the gate of the second PMOS to be connected with the gate of the first PMOS, the second PMOS is turned on, the first PMOS and the second PMOS are connected in common-gate to form a current mirror and output current; when receiving a first opening instruction, the first control module controls the second PMOS to be turned off, and the second PMOS cannot output current. When the second PMOS is turned on, the current output by the drain of the second PMOS directly flows into the output end of the current regulating circuit, the second PMOS is prevented from being affected by the on-voltage drop, so that the second PMOS stably works in a saturation region, the working condition of the second PMOS as the current mirror is met, and the stability of the current regulating circuit is ensured.

This disclosure relates to a start-up circuit for a bandgap circuit for generating a reference voltage, a current mirror of the bandgap circuit including a first MOS transistor. The start-up circuit includes a second transistor and a third transistor in a current mirror configuration, the control terminals of which are coupled through a first resistor, and a fourth MOS transistor between a terminal for applying a supply voltage and a control terminal of the second transistor, the fourth MOS transistor being in a current-mirror configuration with respect to the first MOS transistor.

The application discloses a current monitoring circuit and a monitoring method. The current monitoring circuit comprises a Zener diode, an operational amplifier, a first MOSFET, a second MOSFET and a current mirror circuit. The current monitoring circuit and the monitoring method do not need to use a single-chip integrated or customized power tube, and accurately provide a current proportional to a current flowing through a required monitoring power switch for system monitoring.

A bias circuit may generate one or more bias outputs for a crystal oscillator. The bias circuit may include a first current mirror, a second current mirror, and a third current mirror. A capacitor may be coupled between the second current mirror and the third current mirror. In operation, a first bias output may be generated by a third current mirror, and a second bias output may be generated by a second current mirror. The first bias output and the second bias output may be coupled to a crystal oscillator.

A semiconductor integrated circuit device includes first and second transistors constituting a current mirror. The transistors are each constituted by a plurality of units each having an active region. Dummy transistors are each constituted by a plurality of units each having an active region, the plurality of units being placed at positions overlapping the corresponding units of the first and second transistors in planar view. The active regions of the first and second transistors are formed line-symmetrically. The active regions of the dummy transistors are also formed line-symmetrically. In the dummy transistors, sources and drains at symmetric positions have the same electrical connection state.

The application provides a low-power bandgap reference circuit, a chip and a reference voltage generation method, and solves the problems of high power consumption and the need to use an operational amplifier and a resistor in the prior art bandgap reference, and comprises the following components connected in series: a positive temperature coefficient module comprising a first transistor, a second transistor and a first MOS tube, a difference between base-emitter voltages of the first transistor and the second transistor generating a positive temperature coefficient voltage on the first MOS tube; a clamping module comprising a first clamping MOS tube and a second clamping MOS tube, the clamping module being used to provide equal first clamping voltage and second clamping voltage; a negative temperature coefficient module comprising a first MOS tube and a second MOS tube, threshold voltages of the first MOS tube and the second MOS tube serving as a negative temperature coefficient voltage; a current mirror module proportionally copying a current of a branch in which the first transistor is located to a branch in which the negative temperature coefficient module is located and a branch in which the second transistor is located, and the negative temperature coefficient voltage and the positive temperature coefficient voltage being added together to serve as a reference voltage.

The application provides a pulse current generation circuit, a low-noise frequency reducer and a satellite receiver. The circuit comprises a pulse generation module, a current generation module and a current mirror module, the current generation module is electrically connected with the pulse generation module and the current mirror module, and the current mirror module is used for being electrically connected with an output end of an LDO in the low-noise frequency reducer. The pulse generation module receives a square wave signal and outputs a first pulse voltage at a falling edge of the square wave signal, and the current generation module generates a first current according to the first pulse voltage; the current mirror module outputs a pulse current according to the first current, and the pulse current is a pull-down current connected to the output end of the LDO. The pulse current generation circuit of the application generates and outputs the pull-down pulse current only in the period when the modulation wave needs to drop, effectively reduces the invalid current loss in the period when no demand is required, greatly reduces the average power consumption in the LNB power modulation process, and greatly improves the power conversion efficiency during the LNB power modulation.

Wireless circuitry is provided that includes an amplifier configured to receive a radio-frequency signal, a measurement circuit coupled to a power supply terminal of the amplifier and configured to output a measured value, and control circuitry configured to adjust one or more components associated with the amplifier based on the measured value output from the measurement circuit. The measurement circuit can include a transformer or a current mirror circuit. The control circuitry can selectively adjust an input matching circuit, an output matching circuit, and / or one or more bias voltages for the amplifier based on the measured value. The control circuitry can switch one or more amplifiers in and out of use depending on the measured value.

An overcurrent protection circuit that limits a current to be monitored based on a current limit signal includes: a first transistor and a second transistor configured to form an amplifier input stage that receives input of a detection signal according to the current to be monitored; a third transistor configured to generate a current output signal according to a difference between the detection signal and a reference signal, and configured to form an amplifier output stage that inputs the current output signal as a negative feedback to the amplifier input stage; and a current mirror circuit configured to generate the current limit signal by replicating a signal based on the current output signal.

To provide a current generation circuit capable of improving the accuracy of a current value.SOLUTION: The current generation circuit includes a first current mirror circuit that generates a second current obtained by subtracting a first current from an input current, a second current mirror circuit that generates a third current obtained by subtracting the second current from the input current, and an output terminal that outputs the third current.SELECTED DRAWING: Figure 2

The utility model discloses a current detection circuit, and the current mirror circuit is connected through the output side switch tube mirror image in the measured circuit, thereby the power supply current of measured circuit is imaged as mirror current, and the operational amplifier circuit, current mirror circuit and current detection switch tube constitute the feedback path, because the operational amplifier circuit gain is greater than the preset gain, then the operational amplifier circuit is high gain operational amplifier, utilizes the virtual breakage virtual short feature of high gain operational amplifier, makes the voltage of two input ends of operational amplifier circuit consistent, namely makes the voltage of the output end of current mirror circuit and the voltage of the second end of output side switch tube same, thereby ensures the proportion between mirror current and power supply current is current mirror ratio, and further ensures that current detection module can accurately determine the power supply current of measured circuit according to the mirror current of the second end of current detection switch tube and current mirror ratio, and determines whether power supply current is greater than the preset overcurrent threshold, to realize the accurate current detection of measured circuit.

The invention provides a current mirror image circuit from a low-voltage domain to a high-voltage domain. The current mirror image circuit comprises a bias current generating unit and a first transistor which are located in the low-voltage domain, a second transistor and a third transistor which are located in the high-voltage domain, and a copying unit, bias current provided by the bias current generation unit generates a first voltage drop on the first transistor; the copying unit is used for generating a second voltage drop equal to the first voltage drop on the second transistor according to the first voltage drop so as to generate a mirror current of the bias current on the second transistor; and the third transistor is a high-voltage-resistant transistor and is used for providing output current according to the mirror current. According to the scheme, the high precision of the output current can be ensured while the current is transmitted from the low-voltage domain to the high-voltage domain, and the overall area is small.

The invention provides a band-gap reference voltage starting circuit based on a numerical control adjustable threshold and high robustness, and relates to the field of bandgap circuits, the band-gap reference voltage starting circuit comprises a threshold detection module, a latch, a PTAT current core module and a current mirror, positive temperature coefficient current and negative temperature coefficient current are mutually counteracted to obtain first-order compensated PTAT current, and the first-order compensated PTAT current is used for starting the bandgap reference voltage starting circuit. The current bias voltage is input into a current mirror module, and a plurality of currents are copied and input into other modules in the circuit so as to ensure normal work of a chip. Meanwhile, a branch in the current mirror generates reference voltage through reference current, the reference voltage is input to a threshold detection module to detect whether the PTAT current core module works at an ideal working point or not, if the PTAT current core module does not work at a target working point, copied current in the current mirror is far lower than a target value, and reference voltage output is far lower than the target value. And the threshold detection module works, and the circuit is restarted and forcibly dragged back to the target working point.

A circuit (300) includes a power semiconductor device (310) and a current mirror circuit (320). The power semiconductor device (310) is located in a switched current path (315) between a switching node (620) and a reference potential. The current mirror circuit (320) includes a first transistor (Q1) and a second transistor (Q2) and mirrors a reference current IRef through the first transistor (Q1) by controlling an output current Iout through the second transistor (Q2). The first transistor (Q1) is outside the switched current path (315) and is electrically connected in series with the power semiconductor device (310) in a first current path (100). The second transistor (Q2) is located in a second current path (200). The first current path (100) and the second current path (200) are electrically connected in parallel.

The invention relates to a display structure and display equipment, and the display structure comprises a signal input module which is used for receiving an external control signal, and generating a reference current and a reference voltage according to the external control signal; the cascade amplification module is connected with the output end of the signal input module, the cascade amplification module comprises at least two cascade current mirrors, and the at least two cascade current mirrors are used for carrying out cascade amplification on the reference current according to the reference voltage so as to generate and output amplified current; the partition driving module is connected with the output end of the cascade amplification module, and the partition driving module is used for receiving the amplified current and transmitting the amplified current to pixel array partitions through sequential control; and the pixel array is connected with the output end of the partition driving module, the pixel array comprises a plurality of pixel array partitions, and each pixel array partition is used for receiving the amplified current to emit light. According to the scheme of the invention, the driving capability can be improved so as to improve the light-emitting brightness of a large-area pixel with a large-current requirement.

The invention provides a variable gain CTLE structure and a transceiver, and the structure comprises a load module which is provided with a first access point and a second access point; the transconductance module is composed of a plurality of transconductance units, and each transconductance unit comprises a first branch and a second branch which are symmetrically arranged; one end of the first branch is connected with the first access point, and the other end is connected with the first current source; one end of the second branch is connected with the second access point, and the other end is connected with the second current source; the first branch circuit and the second branch circuit are provided with MOS tubes. A first adjustable resistor and a first adjustable capacitor which are arranged in parallel are also connected between the first branch and the second branch; each transconductance unit is controlled through a current mirror switch, and the gain of each MOS tube is controlled through the current mirror switch. According to the scheme, the wide-range gain adjustment of the CTLE can be realized on the premise of maintaining the CTLE function, and the PGA function is included, so that the analog front-end stage number can be reduced, and the system power consumption and noise can be improved.