789results about "Gated amplifiers" patented technology

A logarithmic amplifier includes programmable gain amplifiers each having a different gain, wherein an input of each of the programmable gain amplifiers is coupled to an input of the logarithmic amplifier; and a summing circuit having inputs coupled to a corresponding output of each of the programmable gain amplifiers and an output coupled to an output of the logarithmic amplifier, wherein the summing circuit generates a logarithmic transfer function having piecewise linear segments.

Apparatus and methods for reconfigurable power amplifiers are disclosed. In certain embodiments, a mobile device includes a transceiver configured to generate a first radio frequency signal of a first frequency band and a second radio frequency signal of a second frequency band, and a front-end system including a push-pull power amplifier configured to selectively amplify one of the first radio frequency signal or the second radio frequency signal based on a band control signal. The push-pull power amplifier includes an input balun, an output balun, and a pair of amplifiers coupled between the input balun and the output balun. The band control signal is operable to control an output capacitance of the pair of amplifiers.

A matching circuit, a radio frequency front-end circuit, a radio transceiver apparatus, and an electronic device are provided. The radio frequency front-end circuit includes a low noise amplifier and a power amplifier each coupled to an antenna through a matching circuit. The matching circuit includes a transformer, a capacitor, a first switch, and a first inductor element. The transformer is coupled to the power amplifier and the antenna. The capacitor is coupled to the transformer and to the low noise amplifier. The first switch is coupled to the capacitor and to the transformer and is grounded. The first inductor element is coupled to the capacitor and to the first switch and is grounded. A resonant network formed by the first inductor element and the first switch enables the radio frequency front-end circuit to in a wide frequency band.

Amplification circuitry is disclosed that couples neutralization transistors to amplification transistors to neutralize parasitic capacitance of the amplification transistors. Gates of a first amplification transistor and a first neutralization transistor are coupled together, and gates of a second amplification transistor and a second neutralization transistor are also coupled together. Drains of the first amplification transistor and the second neutralization transistor are coupled together, and drains of the second amplification transistor and the first neutralization transistor are also coupled together. Sources of neutralization transistors are coupled together at a node, such that a voltage swing of a first signal in the first neutralization transistor may be canceled by a voltage swing of a second signal in the second neutralization transistor. The node also couples to a resistor that prevents charge building in the neutralization transistors.

Methods and devices to improve nonlinearity performance of low noise amplifiers (LNAs) are disclosed. The described methods and devices reduce the capacitive loading of the LNA amplifying devices on the bypass path of the LNAs when operating in the bypass mode. This is performed by decoupling the active devices from ground to put the amplifying devices in a floating state, thus minimizing the impact of the gate-source capacitances of the amplifying devices on the overall linear performance of the LNA operating in the bypass mode.

A frontend circuit includes a wide-band filter, a transmit filter, and switches. The wide-band filter passes both the receive frequency band of a first communication frequency band and that of a second communication frequency band which is close to or overlaps that of the first communication frequency band. The transmit filter passes the transmit frequency band of the first or second communication frequency band. The switches are capable of simultaneously bringing, into conduction, at least two of multiple filters including the wide-band filter and the transmit filter. In carrier aggregation using the receive frequency bands of the first and second communication frequency bands, the switches simultaneously bring the wide-band filter and the transmit filter into conduction. Thus, in carrier aggregation using signals of multiple communication frequencies simultaneously in communication, attenuation of signals due to signal leakage in two receive frequency bands, which are close to each other, is suppressed.

Apparatus and methods for reconfigurable power amplifiers are disclosed. In certain embodiments, a mobile device includes a transceiver configured to generate a first radio frequency signal of a first frequency band and a second radio frequency signal of a second frequency band, and a front-end system including a push-pull power amplifier configured to selectively amplify one of the first radio frequency signal or the second radio frequency signal based on a band control signal. The push-pull power amplifier includes an input balun, an output balun, and a pair of amplifiers coupled between the input balun and the output balun. The band control signal is operable to control an input capacitance of the pair of amplifiers.

An oscillator (1) according to the present disclosure generates output power, and provides a microwave that is in accordance with the output power as an output wave. The oscillator (1) includes a signal generator (10), a power amplifier (20), and a temperature sensor (40). The signal generator (10) generates an oscillation signal. The power amplifier (20) includes a final stage device (22), and amplifies the oscillation signal to generate the output power. The temperature sensor (40) detects a temperature of the final stage device (22). The final stage device (22) is packaged. The temperature sensor (40) is disposed in a package (200) that includes the final stage device (22).

Disclosed is a technology related to a low noise amplifier applied between an RF receiver and an RF switch. A phase difference matching circuit having the same phase difference as a positive gain amplifier is added to an output terminal of an attenuator of a low noise amplifier having a variable gain switching structure. In addition, a variable impedance circuit connected to an output terminal of the positive gain amplifier and an output terminal of a phase difference matching unit to finely adjust the phase difference of each output terminal may be further included.

According to one embodiment, a low noise amplifier (LNA) circuit includes a first stage which includes: a first transistor; a second transistor coupled to the first transistor; a first inductor coupled in between an input port and a gate of the first transistor; and a second inductor coupled to a source of the first transistor, where the first inductor and the second inductor resonates with a gate capacitance of the first transistor for a dual-resonance. The LNA circuit includes a second stage including a third transistor; a fourth transistor coupled between the third transistor and an output port; and a passive network coupled to a gate of the third transistor. The LNA circuit includes a capacitor coupled in between the first and the second stages, where the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage.

Low noise amplifiers (LNAs) are disclosed herein. In certain embodiments, an LNA includes an input balun configured to convert a single-ended radio frequency (RF) receive signal to a differential RF receive signal, an amplifier chain configured to amplify the differential RF receive signal to generate a differential amplified RF receive signal, and an output balun configured to convert the differential amplified RF receive signal into a single-ended amplified RF receive signal. The LNA's amplifier chain is operable in multiple gain modes, and includes a first differential amplification stage, a second differential amplification stage, and a third differential amplification stage.

A packaged integrated circuit device includes a die that includes integrated radio frequency (RF) circuitry. The packaged integrated circuit device also includes a package substrate including metal layers electrically connected to the RF circuitry. The packaged integrated circuit device further includes an impedance adapter electrically connected to the RF circuitry and disposed between the die and the package substrate. The impedance adapter includes a passive component disposed on or in a body of the impedance adapter.

Apparatus and methods for power amplifier consolidation are disclosed. In certain embodiments, a power amplifier system includes a controllable attenuator that generates a 2G cellular transmit signal, a multi-throw switch including a first input that receives the 2G cellular transmit signal and a second input that receives a 5G cellular transmit signal, and a power amplifier including an input electrically connected an output of the multi-throw switch. The power amplifier amplifies the 2G cellular transmit signal in a first mode and amplifies the 5G cellular transmit signal in a second mode.

An apparatus includes a first plurality of switches having a first plurality of input nodes and a first common output node, a second plurality of switches having a second plurality of input nodes and a second common output node, a low noise amplifier having a low noise amplifier input node and a low noise amplifier output node, a first matching component having a first node coupled to the first common output node and a second node coupled to the low noise amplifier input node, and a second matching component having a third node coupled to the second common output node and fourth node coupled to the first common output node and the first node, where at least two matching network configurations of the first matching component and the second matching component are obtained by configuring respective states of the first plurality of switches and the second plurality of switches.

Disclosed in the present invention are a power amplifier module for implementing average power protection, an electronic device, and a method. The power amplifier module comprises: a controller, configured to provide logic control and bias voltage for a radio frequency power amplifier; the radio frequency power amplifier, configured to amplify the power of a radio frequency signal and then output the amplified radio frequency signal to a filter; and a filter for frequency bands, configured to filter the amplified radio frequency signal to obtain a radio frequency signal of a required specific frequency band. When the detected power of the radio frequency power amplifier is greater than or equal to a first power threshold, and the time during which the detected power is greater than or equal to the first power threshold reaches a first time threshold, the power amplifier module enters an average power protection operating mode, and the controller adjusts the gain of a power amplification unit, so as to protect the filter in the power amplifier module from being burnt out.

Systems, methods, and devices relate to tunable circuits for multimode power amplification. For example, a variable-gain amplification system can include an amplifier configured to provide an amplified signal and to selectively operate in at least a first gain mode and a second gain mode. The variable-gain amplification system can also include a tunable circuit configured to receive the amplified signal from the amplifier and to provide an output signal. The tunable circuit can be configured to implement a first turn ratio for the first gain mode and a second turn ratio for the second gain mode.

Disclosed is a transmitter. The transmitter includes a plurality of power amplifiers, each of the plurality of power amplifiers being configured to receive an RF input signal, a parallel power combiner configured to combine outputs of the plurality of power amplifiers to generate an RF output signal, a supply voltage switch configured to provide one supply voltage to the plurality of power amplifiers, the one supply voltage being selected from among a plurality of supply voltages of different voltage levels, and a controller configured to control an output power of the RF output signal by selecting the one supply voltage from among the plurality of supply voltages, and controlling whether to activate each of the plurality of power amplifiers.

A power amplifier includes a main switched capacitor power amplifier (SCPA), a peak SCPA, and a shunt inductor. The main SCPA is electrically coupled to a load. The peak SCPA is in parallel with the main SCPA and electrically coupled to the load. The shunt inductor is electrically coupled between the peak SCPA and the load.

The embodiment of the invention provides a power amplification circuit, radio frequency generation equipment and a communication system, which are applied to the technical field of wireless communication. The power amplification circuit comprises a first main amplification circuit, a second main amplification circuit, a first slave amplification circuit, a second slave amplification circuit, a first coupler, a second coupler, a first combiner and a second combiner. Wherein the pilot frequency power division characteristic is realized after a signal passes through the first coupler and the second coupler. The bandwidths of the first main amplification circuit and the second main amplification circuit are smaller than the bandwidths of the first slave amplification circuit and the second slave amplification circuit. And by narrowing the main amplification circuit, the design difficulty is reduced. Through the design of the combiner, the impedance of the two main amplification circuits is constant, so that the main amplification circuits are designed to be relatively independent, and the main amplification circuits can be easily replaced with other efficient frameworks to realize larger rollback amount. According to the embodiment of the invention, large-bandwidth, large-backoff-amount and high-efficiency power amplifier design can be carried out more easily.

The RF transistor amplifier includes a III-nitride based semiconductor layer structure and an RF transistor amplifier die having a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal, each on a top surface of the semiconductor layer structure; an interconnect structure on the top surface of the RF transistor amplifier die; and coupling elements between the RF transistor amplifier die and the interconnect structure that electrically connect the gate terminals, the drain terminals, and the source terminals to the interconnect structure.

Circuits and methods for providing ESD protection, particularly for LNAs lacking a DC blocking input capacitor (“capless LNAs”). Novel circuitry provides both improved ESD protection and an improved Noise Figure compared to conventional designs. One embodiment includes an integrated circuit including a voltage source pin and a plurality of low-noise amplifiers lacking a respective DC blocking input capacitor, each of the plurality of low-noise amplifiers including: a voltage source terminal coupled to the voltage source pin, an input terminal configured to receive a signal to be amplified, an output terminal configured to output an amplified version of the received signal to be amplified, an ESD protection circuit coupled to the input terminal and to both the voltage source terminal and a reference potential, and a distributed ESD clamp coupled between the reference potential and a node located between the ESD protection circuit and the voltage source terminal.

A low-noise amplifier (LNA) includes a first transistor, a second transistor, and a load coupled to a drain of the first transistor and a drain of the second transistor. The LNA also includes a first reactive impedance matching network including a first inductor and a second inductor inductively coupled with the first inductor, wherein the first inductor is coupled to a source of the first transistor, and the second inductor is coupled to a gate of the first transistor. The LNA also includes a second reactive impedance matching network including a third inductor and a fourth inductor inductively coupled with the third inductor, wherein the third inductor is coupled to a source of the second transistor, and the fourth inductor is coupled to a gate of the second transistor. The LNA also includes a switching circuit configured to enable or disable each of the reactive impedance matching networks.

An impedance matching network for a radio frequency (RF) transmission system can include first port for coupling to a first transistor differential pair. The network can further include a second port for coupling to a second transistor differential pair. The network can further include a matching network connected to the first port and the second port, the matching network comprised of a pair of coupled lines. Other aspects are described.

An electronic device and a method for wireless communication are provided. The electronic device includes a wireless communication circuit, a plurality of power amplification circuits, a first power modulator and a second power modulator configured to adjust a voltage output to at least one power amplification circuit connected among the plurality of power amplification circuits, a power switch configured to connect a first power amplification circuit among the plurality of power amplification circuits to the first power modulator or the second power modulator, memory storing one or more computer programs, and one or more processors communicatively coupled to the wireless communication circuit and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the electronic device to identify power amplification circuits for amplifying, respectively, transmission signals input to the wireless communication circuit, based on the identified power amplification circuits being connected to the first power modulator, control the power switch to connect the first power amplification circuit among the identified power amplification circuits to the second power modulator to simultaneously transmit the transmission signals using the identified power amplification circuits, and based on the identified power amplification circuits being connected to the first power modulator and second modulator, respectively, control the power switch to connect the first power amplification circuit among the identified power amplification circuits to the first power modulator to simultaneously transmit the transmission signals using the identified power amplification circuits.

According to some exemplary aspects, a tracker circuit includes at least a terminal configured to receive a first regulating voltage from a first converter circuit that is configured to convert an input voltage to the first regulating voltage. The tracker circuit also includes a second converter circuit configured to generate a plurality of discrete voltages based on the first regulating voltage and a first supply modulator configured to selectively output at least one of the plurality of discrete voltages to a first power amplifier. The first regulating voltage is provided to a second power amplifier without passing through the second converter circuit.

A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the gm of the input stage of the amplifier, thus improving the noise figure of the amplifier.

Improvement in heat dissipation capability is intended. A radio-frequency module includes a mounting substrate, a first transmission filter, a second transmission filter, a resin layer, and a shield layer. The second transmission filter is higher in power class than the first transmission filter. The resin layer covers at least part of an outer peripheral surface of the first transmission filter and covers at least part of an outer peripheral surface of the second transmission filter. The shield layer overlaps at least part of the second transmission filter in plan view in a thickness direction of the mounting substrate. At least part of a major surface of the second transmission filter on an opposite side to the mounting substrate side is in contact with the shield layer.

Circuits and methods include amplification circuitry coupled to a plurality of input signal paths and an output signal path and a unified signal path combining a feedback path couplable between a feedback node in the output signal path and the input signal path via a plurality of input switches and a passive gain path couplable between the feedback node in the output signal path and one or more input signal paths through the input switch. The circuit may include a first capacitor and a variable resistor coupled in series and a second capacitor coupled in series with a feedback path switch and a power supply rejection resistor. The passive gain path may further include a shunt switch coupled in series between a plurality of bypass switches to form a T-switch. A fast charging switch may be configurable to couple a second capacitor to a reference potential during a state change of the unified signal path.

A high-voltage input stage circuit without bias current includes a high-voltage conversion unit, a clamping unit and an input unit. The high-voltage conversion unit is connected to the clamping unit, and is used to generate a unique switching voltage based on the magnitude of the differential input voltage, and the switching voltage is respectively input into the positive phase clamping unit and the negative phase clamping unit of the clamping unit. The clamping unit is connected to the high-voltage conversion unit and the input unit, and is used to realize conduction or shutdown based on the switching voltage to input the differential input voltage into the input unit; the input unit is used to realize voltage output to the subsequent load.

A variable-gain multistage broadband low-noise amplifier comprises N (N > = 2) stages of amplifying circuits, the first stage of amplifying circuit and the second stage of amplifying circuit are connected through a first inter-stage matching circuit, a main circuit switch and an inter-stage matching circuit are sequentially connected between the subsequent stages of amplifying circuits in series, the input end is connected with an input matching circuit in series to be connected to the first stage of amplifying circuit, and the second stage of amplifying circuit is connected with a second stage of amplifying circuit. The Nth-stage amplification circuit is connected in series with a main switch and an output matching circuit in sequence to a signal output end; from the second stage, each stage of amplifying circuit and the main switch are integrally connected with a bypass switch in parallel; a source degeneration inductance scheme is adopted for input matching, and the noise performance is optimized; the overall gain flatness is improved through inter-stage matching; a multi-stage LC structure is adopted for output matching, and broadband matching in different gain modes is achieved; according to the invention, control of each switch is realized through logic level signals, switching of multiple gain modes is realized, the designed bandwidth reaches more than 10GHz, and the overall gain flatness and the noise coefficient in different gain modes are kept consistent.