The invention provides a
radio frequency device and a preparation method thereof, and the preparation method comprises the steps: providing a second substrate structure, inverting a
semiconductor structure where a first substrate structure is located, bonding the
semiconductor structure on the second substrate structure, and carrying out the
thinning and removal of bottom
silicon from the back surface of the bottom
silicon, and stopping the
thinning and removal of the bottom
silicon at the back surface of a middle insulating layer. The second substrate structure is used as a new substrate of the
radio frequency device, and the middle insulating layer in the first substrate structure is used for removing a stop layer,
thinning and removing bottom silicon, so that the
parasitic capacitance of the first substrate structure can be remarkably reduced, the negative effect of the
parasitic capacitance of the substrate is effectively eliminated, the
coupling effect of the substrate
capacitance is eliminated, and the reliability of the
radio frequency device is improved.
Signal leakage is reduced, the overall
breakdown voltage uniformity of the radio frequency switch is improved, and the
power processing capability is improved, so that the radio frequency performance of a radio frequency switch device is improved.