244 results about "RF switch" patented technology

An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.

Disclosed is a technology related to a low noise amplifier applied between an RF receiver and an RF switch. A phase difference matching circuit having the same phase difference as a positive gain amplifier is added to an output terminal of an attenuator of a low noise amplifier having a variable gain switching structure. In addition, a variable impedance circuit connected to an output terminal of the positive gain amplifier and an output terminal of a phase difference matching unit to finely adjust the phase difference of each output terminal may be further included.

Technologies directed to an energy efficient technique for Antennas as Sensors (A2S) systems used for detecting user input events are described. One electronic device includes a wireless communication component coupled to an antenna via a radio frequency (RF) path, and an RF switch selectively coupling the A2S system to the RF path. The radio sends RF signals to the antenna via the RF path in a first time window. The RF switch is controlled to selectively couple the A2S system to the RF path in the first time window. A processing device of the electronic device receives receiving an analog voltage signal representing impedance changes of the antenna in the first time window and determines, using the analog voltage signal, a user input event caused by a presence of an object in proximity to the antenna. The processing device performs an action in response to the user input event.

The invention relates to an RF series switching device with switching time acceleration. An RF switching device includes: a shunt switch having a first RF terminal, a second RF terminal coupled to ground, a main control input, and an acceleration control input; a series switch having a first RF terminal coupled to the first RF terminal of the shunt switch, a second RF terminal, a main control input, and an acceleration control input; and a switching time acceleration circuit having a positive acceleration path input, a negative acceleration path input, and a first output coupled to the main control input of the series switch.

A device useful as a switch including an input waveguide coupled to an output waveguide; a first diode circuit integrated with the input waveguide at a first termination; a second diode circuit integrated with the output waveguide at a second termination; and wherein the biasing the diode circuits switches the switch between an off state and an on state and achieves high isolation in the off state by absorbing input power in, reflecting the input power from, and frequency multiplying the input power using the diodes in the diodes circuits when the input power is received from the input waveguide. In one embodiment, the switch is a tunable, solid-state SPST switch for Gband radar applications.

The utility model discloses an electrically tunable filter with low insertion loss, which belongs to the technical field of electrically tunable filters, and comprises a PCB (printed circuit board) and a metal shell, the PCB is provided with electrical components of the electrically tunable filter, the PCB is provided with six layers, each layer of the PCB is grounded in a large area, and the ground is paved in the space outside component pads and wires of the PCB. The first layer, the third layer and the fifth layer of the PCB are wired, the second layer, the fourth layer and the bottom layer are all completely grounded, and radio frequency pin outgoing lines of a radio frequency switch U1 and a radio frequency switch U2 arranged on the PCB adopt 50-ohm impedance wiring on the first layer and the third layer; the filters arranged on the PCB are arranged in a bilateral symmetry mode. The product size is small, the first layer and the third layer are provided with 50-ohm impedance wiring, and the loss of a connecting line between a radio frequency port of the radio frequency switch and the input / output of the filter is reduced, especially the high-frequency part (1000-2500MHz).

An on-chip integrated microwave photonic phase-coded signal generation system relates to the field of microwave photonic technology. The system includes a laser, a power splitter, a radio frequency (RF) switch, a 90° hybrid coupler (HC), a dual-parallel dual-polarization Mach-Zehnder modulator (DP-DPMZM), a polarization-dependent cascaded phase modulator (PDC-PM), a polarization beam splitter, an erbium-doped fiber amplifier, and a photodetector. In this method, the local oscillator (LO) signal is split into two parts by a power splitter. One part is input into the X-DPMZM to obtain the carrier suppression +1st order sideband of the LO signal. The other part is controlled by an RF switch. When the RF switch is off, the Y-DPMZM only outputs an optical carrier; when the RF switch is on, the Y-DPMZM outputs the -1st order sideband of the LO signal. Then, two orthogonally polarized signals are input into the PDC-PM, which is driven by two independent coding signals. When the amplitude and mode of the coding signals are changed, a binary or quaternary phase-coded signal with a carrier frequency equal to or twice that of the LO signal can be obtained through a photodetector.

The present invention relates to an adaptive matching circuit and a matching method for a magnetic resonance radio frequency coil, and belongs to the field of magnetic resonance imaging technology. The circuit includes a receiving coil, an adjustable matching circuit, a radio frequency switch, a return loss detection circuit, and a single-chip control circuit; the circuit uses a binary method to adjust the voltage value across the variable capacitance diode in the adjustable matching circuit, and automatically detects the adaptation of the matching circuit through the return loss detection circuit to achieve instant adaptive circuit matching, and through the joint action of the adjustable matching circuit, the radio frequency switch, and the single-chip control circuit, the return loss at the center frequency point of the receiving coil reaches the maximum value to achieve the best matching. The present invention can effectively avoid the situation where the matching circuit cannot match, and improve the transmission efficiency of high-frequency signal energy.

The invention provides a radio frequency power amplification circuit and an adjusting method thereof. The radio frequency power amplification circuit comprises an image transmission module, a first radio frequency switch, a radio frequency power amplification module, a radio frequency low-noise amplifier, a second radio frequency switch and an antenna module, the radio frequency power amplification module comprises a GaN radio frequency power amplifier, the image transmission module is connected with an RFC of the first radio frequency switch, the GaN radio frequency power amplifier is connected between RF1 channels of the first radio frequency switch and the second radio frequency switch, and the radio frequency low noise amplifier is connected between RF2 channels of the first radio frequency switch and the second radio frequency switch. The antenna module is connected with the RFC of the second radio frequency switch; the two radio frequency switches are configured to control a radio frequency signal transmitted by the image transmission module to flow to the GaN radio frequency power amplifier in a radio frequency transmitting state, and the radio frequency signal is transmitted to the antenna module after being amplified; in the radio frequency receiving state, radio frequency signals received by the antenna module are controlled to flow to the radio frequency low-noise amplifier and are sent to the image transmission module after being amplified. According to the invention, ultra-long distance image transmission of the unmanned equipment can be realized.

A radio frequency (RF) switch circuit and a method for operation of a RF switch circuit. The RF switch circuit may include a first switch connected between a first port and an antenna port, a second switch connected between a second port and the antenna port, a third switch connected between the antenna port and ground, a fourth switch connected between the antenna port and the ground, and a switch control circuit configured to control the first switch, the second switch, and the third switch to be turned off and the fourth switch to be turned on in a low power mode.

Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and / or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.

A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.

This invention provides a radio frequency (RF) switch circuit and module. The RF switch circuit includes a first resistor and stacked switching units. Each stacked switching unit comprises multiple stages of stacked field-effect transistor (FET) circuits connected in series. Each stage of the stacked FET circuit includes a FET, a second resistor, and a bootstrap unit, which includes one or two bootstrap circuits. The bootstrap unit in each stage of the stacked FET circuit is used to raise the gate voltage of the corresponding FET during electrostatic discharge (ESD) to assist in turning on the FET and allowing the ESD current to be discharged through the path formed by the FET. This invention can prevent gate oxide breakdown or thermal damage caused by localized overheating of the FET acting as a switch during an ESD event in the RF switch circuit, thereby improving the stability of the RF switch circuit.

This invention provides an unmanned aerial vehicle (UAV) image transmission system and image transmission method. The system includes: a radio frequency (RF) transceiver, a balanced amplifier circuit, a low-noise amplifier, and an RF switch. The balanced amplifier circuit includes at least two parallel power amplifiers configured to superimpose the amplified signals from each power amplifier in phase to synthesize the output power. The RF transceiver generates a time-division duplex control signal to synchronously control the switching of each component between transmit and receive modes. By employing a balanced amplifier circuit, this invention enables each power amplifier to operate in a region with better linearity, thereby improving transmit power while ensuring the signal quality required for high-order modulation, thus balancing long-distance transmission and high-definition image quality.

The invention relates to a fully depleted semiconductor-on-insulator switch with built-in electrostatic discharge protection. The disclosed semiconductor structure includes: a semiconductor layer including a switching region having a first portion and a second portion side by side; and an RF switch having built-in ESD / surge protection. In one embodiment, an RF switch includes transistors connected in series, the transistors including: source / drain regions within a first portion of a switching region and a channel region laterally between the source / drain regions; and parallel gates adjacent to the channel regions, respectively, the gates traversing the first portion of the switching region without further extending onto the second portion. The outer source / drain regions are silicided and contacted, while the inner source / drain regions are not silicided and contacted. A second portion of the switching region is in contact with the source / drain region in the first region, is not silicided, and is doped or lightly doped. Thus, the second portion forms a resistive element connected in parallel with the serially connected transistors.

An apparatus of a radio unit (RU) may include a radio frequency (RF) switch selectively connected to an uplink path or a downlink path for time division duplex (TDD); at least one processor; and a memory including instructions. When executed individually or collectively by the at least one processor, the instructions may cause the apparatus to: receive a control plane message from a distributed unit (DU) within a downlink receive window; obtaining a segment for downlink scheduling based on data direction information and a segment type indicator of a generic header of the control plane message; and changing a path to which the RF switch is connected from an uplink path to a downlink path on the basis of the segmented command for increasing the symbol number and information for indicating the number of symbols.

Provided is a ferroelectric structure. The ferroelectric structure includes: a substrate; a lower electrode disposed on the substrate; a ferroelectric layer disposed on the lower electrode and including a two-dimensional ferroelectric material; and an upper electrode disposed on the ferroelectric layer, in which a current value of random intensity is obtained for the same voltage being applied.

The invention discloses a millimeter-wave oriented 1-bit transmission phase modulation metasurface unit, comprising an upper substrate and a lower substrate; the upper substrate has a top patch, and the lower substrate has a bottom patch; both patches are rectangular ring structures; the center of the top patch has a connection patch, and a PIN radio frequency switch is connected between the short side line of the top patch and the connection patch; the short side line of the bottom patch is connected to the rectangular patch; a metal stratum is provided between the two substrates, and a narrow gap with a through hole is provided on the stratum; one side line of the two patches is connected to the stratum through a first metal via hole, and the other side lines are connected to the stratum through a second metal via hole, and the connection patch is connected to the rectangular patch through a third metal via hole passing through the stratum through hole. The relative DC bias voltages of the via holes on both sides and the middle via hole are adjusted, and the two PIN radio frequency switches are controlled to be in opposite states, respectively, so that the metasurface unit presents two states, which is equivalent to the top patch being physically rotated 180°, thereby realizing 1-bit transmission phase modulation.

This invention provides an automated testing device for UAV data links, including an industrial control computer, a display, a spectrum analyzer, a programmable DC power source, a programmable adjustable attenuator, a fixed attenuator I, a fixed attenuator II, a power divider I, a power divider II, an RF switch, a shielded box I, and a shielded box II. The software of the industrial control computer includes a system management module and an automated testing module. The advantages of this invention are: it uses general-purpose testing equipment, is based on a computer-automated program, and controls the settings of each testing device via a bus to simulate remote control, telemetry, image data transmission and reception, and bit error rate statistics; it achieves automated testing of core functional performance indicators of UAV data links such as power consumption, transmit power, spectrum, functionality, receiver sensitivity, bit error rate, and latency.

The present application discloses a radio frequency switch, a radio frequency front-end module, a radio frequency front-end chip and a terminal device, and relates to the technical field of terminal devices. The radio frequency switch includes at least two antenna ports, a transceiver port and a plurality of output ports; one of the at least two antenna ports is electrically connected to the transceiver port and the plurality of output ports, so that the path between the antenna port and the transceiver port and the plurality of output ports flows through the transceiver signal; the other of the at least two antenna ports is electrically connected to the plurality of output ports, so that the path between the antenna port and the plurality of output ports flows through the received signal. Based on the solution of the present application, the area of ​​the radio frequency switch can be reduced and the insertion loss of the radio frequency switch can be optimized.

A wireless communication relay device includes a first transceiver and a second transceiver, each configured to operate over respective communication channels. The channels of the relay device may be configured for co-channel operation or adjacent channel operation. The relay is configured to operate according to a time division multiplexing schedule such that only one transceiver is active (receiving or transmitting) during a given time interval. During inactive intervals, antenna feeds corresponding to inactive transceivers are shunted to ground using controllable RF switches. This antenna feed shunting prevents inactive transceivers from receiving power emitted into the local RF environment, including power emitted by the active transceiver or reflected by surrounding surfaces.

The invention discloses a low-cost single-base-station high-precision positioning system and method.The system comprises a master control MCU, a UWB single chip, an RF switch and an antenna array, the antenna array is composed of a plurality of A1-AM antennas evenly distributed on a circle at intervals, and the center of the circle is provided with an antenna A0; the main control MCU is in communication connection with the UWB single chip, an RF1 port of the UWB single chip is respectively connected with A1-AM antennas in an antenna array through an RF switch, and the main control MCU controls the RF switch to sequentially select the antennas in the antenna array to access through a GPIO port; and an RF2 port of the UWB single chip is connected with the antenna A0. In the field of high-precision indoor positioning, three-dimensional high-precision positioning can be realized only by matching a single UWB chip with a radio frequency switch and an antenna array, and the overall cost and the working power consumption of a positioning system are effectively reduced.

The present invention relates to a negative voltage source switching circuit, including an enabling circuit, receiving an external positive power supply voltage VDD and a negative power supply voltage EXVSS, generating an enabling signal based on the negative power supply voltage EXVSS, when the negative power supply voltage EXVSS is invalid, the enabling signal is valid; when the negative power supply voltage EXVSS is valid, the enabling signal is invalid; a charge pump, based on a valid enabling signal, provides an internal negative voltage INVSS; a first transistor MS1 and a second transistor MS2, both including a control end, a first end and a second end; the first end of the first transistor MS1 is connected to the control end of the second transistor, and is used to receive the negative power supply voltage EXVSS; the first end of the second transistor is connected to the control end of the first transistor, and is used to receive the internal negative voltage INVSS; the second end of the first transistor is connected to the second end of the second transistor, and is used to output a negative working voltage VSS. The present invention also relates to a radio frequency switch chip.

Embodiments described herein include radio frequency (RF) switches. Generally, embodiments described herein selectively bias an output of one or more switch transistors in the RF switch. Such coupling can provide a bias that significantly reduces gate lag effects. In one embodiment, the RF switch includes an antenna node, a first input / output (I / O) node, a second I / O node, a field effect transistor (FET), a FET stack, and a bias coupling circuit. In this embodiment, the bias coupling circuit electrically couples a gate terminal of the FET to one or more FET output terminals of the FET stack to provide a bias voltage to the one or more output terminals.

Methods to mask an RF switch prior to a coating process and RF switches that have been masked according to these methods.

The invention discloses a passive current measuring device which comprises a first loop and a second loop, wherein the first loop is composed of a microstrip antenna, an RF switch, a rectifying circuit and a micro-power-consumption oscillator and used for intermittently reflecting or absorbing environment radio-frequency signals, and the second loop is composed of a magneto-dependent resistor, the rectifying circuit and the micro-power-consumption oscillator and used for converting a magnetic induction intensity value into a magneto-dependent resistor value. An innovative magneto-resistor technology is adopted and fused with a back scattering technology, passive non-contact measurement of current is achieved, an FPC board is tightly attached to the surface of a measured conductor, errors caused by different position angles of the measurement device are greatly reduced, the weight of the measurement device is reduced through the back scattering technology and radio frequency energy collection, and the measurement precision is improved. And the problem of unstable energy supply is solved.

An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.

A disclosed semiconductor structure includes a semiconductor layer including a switch area with side-by-side first and second portions and an RF switch with built-in ESD / power surge protection. The RF switch includes series-connected transistors, which include, within the first portion of the switch area, source / drain regions and channel regions positioned laterally between the source / drain regions; and parallel gates adjacent to the channel regions, respectively, and traversing the first portion of the switch area without extending further onto the second portion. Outer source / drain regions are silicided and contacted, whereas inner source / drain regions are unsilicided and uncontacted. The second portion of the switch area is in contact with the source / drain regions in the first area, is unsilicided, and is either undoped or low doped. Thus, the second portion makes up resistive elements connected in parallel to the series-connected transistors.

A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source / drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.

This application proposes a microwave RF switch design method, device, and storage medium based on analytical mechanics. The method includes: acquiring switch specification information, multi-band performance constraint information, and technical platform constraint information; constructing an analytical mechanics model using scalar functions or scalar functionals; optimizing the analytical mechanics model based on the switch performance constraint information; inputting the switch specification information, multi-band performance constraint information, and technical platform constraint information into the optimized analytical mechanics model to output switch parameters that satisfy the multi-band performance constraint information; and generating design specifications for the microwave RF switch based on the switch parameters. Based on this, this application uses an analytical mechanics model to collaboratively design microwave RF switches by integrating multi-band performance constraints and technical platform constraints with switch performance. This leverages cross-band and technical platform synergy optimization to achieve cross-band switch performance trade-offs, ensuring that the microwave RF switch has optimal performance indicators.