363 results about "RF switch" patented technology

The invention provides a radio frequency front-end module. The radio frequency front-end module comprises a power amplifier, a single-pole double-throw radio frequency switch, a low-noise amplifier, a first single-pole single-throw radio frequency switch, a coupler, a double-pole double-throw radio frequency switch, a radio frequency amplifier, a second single-pole single-throw radio frequency switch, a detector and an operational amplifier. According to the radio frequency front-end module, when the processing capacity of the upper computer is weak or commands between the upper computer and the radio frequency front-end module are incompatible, the signal receiving capacity of the radio frequency front-end module can be improved, switching between a receiving bypass channel and a low-noise amplifier channel can be achieved in time, meanwhile, the complexity of transmitting power control is effectively reduced, radiation is reduced, and the reliability of transmitting power control is improved. The energy consumption is reduced, and the service life of the radio frequency front-end module is prolonged.

Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and / or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.

An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.

Disclosed is a technology related to a low noise amplifier applied between an RF receiver and an RF switch. A phase difference matching circuit having the same phase difference as a positive gain amplifier is added to an output terminal of an attenuator of a low noise amplifier having a variable gain switching structure. In addition, a variable impedance circuit connected to an output terminal of the positive gain amplifier and an output terminal of a phase difference matching unit to finely adjust the phase difference of each output terminal may be further included.

Technologies directed to an energy efficient technique for Antennas as Sensors (A2S) systems used for detecting user input events are described. One electronic device includes a wireless communication component coupled to an antenna via a radio frequency (RF) path, and an RF switch selectively coupling the A2S system to the RF path. The radio sends RF signals to the antenna via the RF path in a first time window. The RF switch is controlled to selectively couple the A2S system to the RF path in the first time window. A processing device of the electronic device receives receiving an analog voltage signal representing impedance changes of the antenna in the first time window and determines, using the analog voltage signal, a user input event caused by a presence of an object in proximity to the antenna. The processing device performs an action in response to the user input event.

The invention relates to an RF series switching device with switching time acceleration. An RF switching device includes: a shunt switch having a first RF terminal, a second RF terminal coupled to ground, a main control input, and an acceleration control input; a series switch having a first RF terminal coupled to the first RF terminal of the shunt switch, a second RF terminal, a main control input, and an acceleration control input; and a switching time acceleration circuit having a positive acceleration path input, a negative acceleration path input, and a first output coupled to the main control input of the series switch.

A device useful as a switch including an input waveguide coupled to an output waveguide; a first diode circuit integrated with the input waveguide at a first termination; a second diode circuit integrated with the output waveguide at a second termination; and wherein the biasing the diode circuits switches the switch between an off state and an on state and achieves high isolation in the off state by absorbing input power in, reflecting the input power from, and frequency multiplying the input power using the diodes in the diodes circuits when the input power is received from the input waveguide. In one embodiment, the switch is a tunable, solid-state SPST switch for Gband radar applications.

The utility model discloses an electrically tunable filter with low insertion loss, which belongs to the technical field of electrically tunable filters, and comprises a PCB (printed circuit board) and a metal shell, the PCB is provided with electrical components of the electrically tunable filter, the PCB is provided with six layers, each layer of the PCB is grounded in a large area, and the ground is paved in the space outside component pads and wires of the PCB. The first layer, the third layer and the fifth layer of the PCB are wired, the second layer, the fourth layer and the bottom layer are all completely grounded, and radio frequency pin outgoing lines of a radio frequency switch U1 and a radio frequency switch U2 arranged on the PCB adopt 50-ohm impedance wiring on the first layer and the third layer; the filters arranged on the PCB are arranged in a bilateral symmetry mode. The product size is small, the first layer and the third layer are provided with 50-ohm impedance wiring, and the loss of a connecting line between a radio frequency port of the radio frequency switch and the input / output of the filter is reduced, especially the high-frequency part (1000-2500MHz).

The invention belongs to the field of radio frequency chip testing, particularly relates to an automatic testing system for a programmable radio frequency transceiver chip, and aims to solve the problems that an existing testing system cannot meet the requirements of configuring and testing a to-be-tested chip in real time and cannot ensure the accuracy and stability of radio frequency parameter testing. The system comprises a controller and a test instrument which are integrated in a PXI case; the software control system runs in the controller; an input port and an output port of the radio frequency switch are respectively connected with the test instrument and the test adapter plate through radio frequency cables. The test adapter plate is respectively connected with the chip to be tested, the test instrument and the radio frequency switch array; the digital relay array is distributed and integrated on the test adapter plate; the digital relay array is respectively connected with a relay driver and a chip to be tested in the test instrument; and the chip control module is used for transmitting and receiving control instructions through the LAN interface and the controller. According to the system, the chip to be tested can be configured and tested in real time, and the accuracy and the stability of radio frequency parameter testing are improved.

An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in a low loss mode, in a bypass mode, or, optionally, in a signal function mode. Embodiments of the invention allow for both a single switch in the series input path to a target circuit while still having the ability to isolate the bypass path from the target circuit. In the low loss and bypass mode, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.

An on-chip integrated microwave photonic phase-coded signal generation system relates to the field of microwave photonic technology. The system includes a laser, a power splitter, a radio frequency (RF) switch, a 90° hybrid coupler (HC), a dual-parallel dual-polarization Mach-Zehnder modulator (DP-DPMZM), a polarization-dependent cascaded phase modulator (PDC-PM), a polarization beam splitter, an erbium-doped fiber amplifier, and a photodetector. In this method, the local oscillator (LO) signal is split into two parts by a power splitter. One part is input into the X-DPMZM to obtain the carrier suppression +1st order sideband of the LO signal. The other part is controlled by an RF switch. When the RF switch is off, the Y-DPMZM only outputs an optical carrier; when the RF switch is on, the Y-DPMZM outputs the -1st order sideband of the LO signal. Then, two orthogonally polarized signals are input into the PDC-PM, which is driven by two independent coding signals. When the amplitude and mode of the coding signals are changed, a binary or quaternary phase-coded signal with a carrier frequency equal to or twice that of the LO signal can be obtained through a photodetector.

The present invention relates to an adaptive matching circuit and a matching method for a magnetic resonance radio frequency coil, and belongs to the field of magnetic resonance imaging technology. The circuit includes a receiving coil, an adjustable matching circuit, a radio frequency switch, a return loss detection circuit, and a single-chip control circuit; the circuit uses a binary method to adjust the voltage value across the variable capacitance diode in the adjustable matching circuit, and automatically detects the adaptation of the matching circuit through the return loss detection circuit to achieve instant adaptive circuit matching, and through the joint action of the adjustable matching circuit, the radio frequency switch, and the single-chip control circuit, the return loss at the center frequency point of the receiving coil reaches the maximum value to achieve the best matching. The present invention can effectively avoid the situation where the matching circuit cannot match, and improve the transmission efficiency of high-frequency signal energy.

A radio frequency (RF) switch circuit that outputs signals input through first and second input ports to an output port is provided. The RF switch circuit includes a first series switch that outputs the signal input through the first input port; a first shunt switch connected to the first input port; a first attenuation circuit connected between the first shunt switch and ground and attenuating the signal output from the first input port to the output port; a detector that detects a magnitude of a signal output to the output port and generates a first control signal based on the magnitude of the detected signal; and a switch control circuit that controls the first series switch, the first shunt switch, and the first attenuation circuit with the first control signal and a second control signal to select a signal path between the first input port and the output port.

The invention belongs to the technical field of electronic reconnaissance, and discloses an ultra-wideband radio frequency receiving front-end SIP module system based on HTCC, which comprises a three-dimensional package for signal transmission, and the three-dimensional package comprises a BGA layer, a package internal signal transmission layer, a top microstrip wiring and a device placement layer; the miniaturization advantage is obvious: the packaging substrate is formed by sintering aluminum oxide ceramic at high temperature, and the packaging substrate has 12 layers and is small in size. And the system integration degree is high: a single SIP module can be integrated with radio frequency front-end systems such as an amplitude limiter, a radio frequency switch, a filter, a low noise amplifier, a digital control attenuator and the like, so that related function indexes are realized. According to the radio frequency transmission line and power supply structure design, the structure comprises a radio frequency signal transmission line and a power supply distribution line. Wherein the routing of the radio frequency layer adopts a quasi-coaxial-strip line-quasi-coaxial structure, and good signal transmission can be realized in a frequency band of 2-10GHz.

The invention provides a radio frequency power amplification circuit and an adjusting method thereof. The radio frequency power amplification circuit comprises an image transmission module, a first radio frequency switch, a radio frequency power amplification module, a radio frequency low-noise amplifier, a second radio frequency switch and an antenna module, the radio frequency power amplification module comprises a GaN radio frequency power amplifier, the image transmission module is connected with an RFC of the first radio frequency switch, the GaN radio frequency power amplifier is connected between RF1 channels of the first radio frequency switch and the second radio frequency switch, and the radio frequency low noise amplifier is connected between RF2 channels of the first radio frequency switch and the second radio frequency switch. The antenna module is connected with the RFC of the second radio frequency switch; the two radio frequency switches are configured to control a radio frequency signal transmitted by the image transmission module to flow to the GaN radio frequency power amplifier in a radio frequency transmitting state, and the radio frequency signal is transmitted to the antenna module after being amplified; in the radio frequency receiving state, radio frequency signals received by the antenna module are controlled to flow to the radio frequency low-noise amplifier and are sent to the image transmission module after being amplified. According to the invention, ultra-long distance image transmission of the unmanned equipment can be realized.

A radio frequency (RF) switch circuit and a method for operation of a RF switch circuit. The RF switch circuit may include a first switch connected between a first port and an antenna port, a second switch connected between a second port and the antenna port, a third switch connected between the antenna port and ground, a fourth switch connected between the antenna port and the ground, and a switch control circuit configured to control the first switch, the second switch, and the third switch to be turned off and the fourth switch to be turned on in a low power mode.

Provided is an RF switch device and a manufacturing method thereof and, more particularly, an RF switch device and a manufacturing method thereof that improve breakdown voltage characteristics and prevent an increase in the figure of merit (FoM) value, which has a trade-off relationship with the breakdown voltage characteristics, by decreasing the path along which holes move in a body region to a body contact by including a first (gate) electrode extending along a first direction between opposite ends of a second (gate) electrode extending in a second (orthogonal) direction.

Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and / or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.

A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.

This invention provides a radio frequency (RF) switch circuit and module. The RF switch circuit includes a first resistor and stacked switching units. Each stacked switching unit comprises multiple stages of stacked field-effect transistor (FET) circuits connected in series. Each stage of the stacked FET circuit includes a FET, a second resistor, and a bootstrap unit, which includes one or two bootstrap circuits. The bootstrap unit in each stage of the stacked FET circuit is used to raise the gate voltage of the corresponding FET during electrostatic discharge (ESD) to assist in turning on the FET and allowing the ESD current to be discharged through the path formed by the FET. This invention can prevent gate oxide breakdown or thermal damage caused by localized overheating of the FET acting as a switch during an ESD event in the RF switch circuit, thereby improving the stability of the RF switch circuit.

This invention provides an unmanned aerial vehicle (UAV) image transmission system and image transmission method. The system includes: a radio frequency (RF) transceiver, a balanced amplifier circuit, a low-noise amplifier, and an RF switch. The balanced amplifier circuit includes at least two parallel power amplifiers configured to superimpose the amplified signals from each power amplifier in phase to synthesize the output power. The RF transceiver generates a time-division duplex control signal to synchronously control the switching of each component between transmit and receive modes. By employing a balanced amplifier circuit, this invention enables each power amplifier to operate in a region with better linearity, thereby improving transmit power while ensuring the signal quality required for high-order modulation, thus balancing long-distance transmission and high-definition image quality.

The invention relates to a fully depleted semiconductor-on-insulator switch with built-in electrostatic discharge protection. The disclosed semiconductor structure includes: a semiconductor layer including a switching region having a first portion and a second portion side by side; and an RF switch having built-in ESD / surge protection. In one embodiment, an RF switch includes transistors connected in series, the transistors including: source / drain regions within a first portion of a switching region and a channel region laterally between the source / drain regions; and parallel gates adjacent to the channel regions, respectively, the gates traversing the first portion of the switching region without further extending onto the second portion. The outer source / drain regions are silicided and contacted, while the inner source / drain regions are not silicided and contacted. A second portion of the switching region is in contact with the source / drain region in the first region, is not silicided, and is doped or lightly doped. Thus, the second portion forms a resistive element connected in parallel with the serially connected transistors.

A high-electron-mobility transistor according to an embodiment of the present technology comprises a semiconductor layer, a gate electrode, and a gate insulating film provided between the semiconductor layer and the gate electrode. The gate insulating film has a first insulating film in contact with the semiconductor layer, and a second insulating film in contact with the first insulating film and the gate electrode. The first insulating film and the second insulating film satisfy the following relational expressions (A), (B), and (C).　Relational expression (A): EOT (T1) / EOT (T2) ≥ 1.43. Relational expression (B): EOT (T2) ≤ 0.75 nm. Relational expression (C): ε1 ≥ ε2. T1: thickness (nm) of first insulating film. T2: thickness (nm) of second insulating film. EOT (T1): equivalent oxide film thickness of first insulating film. EOT (T2): equivalent oxide film thickness of second insulating film. ε1: relative dielectric constant of first insulating film. ε2: relative dielectric constant of second insulating film. EOT: equivalent oxide film thickness (film thickness equivalent to that of silicon oxide film in terms of capacitance).

An apparatus of a radio unit (RU) may include a radio frequency (RF) switch selectively connected to an uplink path or a downlink path for time division duplex (TDD); at least one processor; and a memory including instructions. When executed individually or collectively by the at least one processor, the instructions may cause the apparatus to: receive a control plane message from a distributed unit (DU) within a downlink receive window; obtaining a segment for downlink scheduling based on data direction information and a segment type indicator of a generic header of the control plane message; and changing a path to which the RF switch is connected from an uplink path to a downlink path on the basis of the segmented command for increasing the symbol number and information for indicating the number of symbols.

Provided is a ferroelectric structure. The ferroelectric structure includes: a substrate; a lower electrode disposed on the substrate; a ferroelectric layer disposed on the lower electrode and including a two-dimensional ferroelectric material; and an upper electrode disposed on the ferroelectric layer, in which a current value of random intensity is obtained for the same voltage being applied.

Current beamforming antennas use an active phase shifter chipset attached to each radiating element to steer a beam, and this active phase shifter chipset consisting of a variable amplifier and a variable phase shifter is expensive due to the costs associated with semiconductor processing, amplifier bias, and control. The number of active phase shifter chipsets increases with RF power consumption, DC power consumption, and array size, thereby posing significant drawbacks in terms of development and operational resource investment. To address and improve these issues of existing beam streering antennas, presented is an operation method of the parts, entirety, and switches of a device in which a primary device that changes the steering angle of a beam through a metamaterial planar lens by changing the position of a radiating source, which is a purely passive component, and a series of patches are arranged for each position of the radiating source, without the need for a power divider, electromagnetic waves are incident onto the metamaterial lens through a simple selection of an RF switch, and a necessary phase compensation value at each point of the metamaterial lens is implemented through a combined structure of metal circular patches inside a metal ring, which more flexibly makes robust and sensitive resonance characteristics less susceptible to negative effects caused by changes in frequency signals or process errors even when the direction of incidence changes.

The invention discloses a millimeter-wave oriented 1-bit transmission phase modulation metasurface unit, comprising an upper substrate and a lower substrate; the upper substrate has a top patch, and the lower substrate has a bottom patch; both patches are rectangular ring structures; the center of the top patch has a connection patch, and a PIN radio frequency switch is connected between the short side line of the top patch and the connection patch; the short side line of the bottom patch is connected to the rectangular patch; a metal stratum is provided between the two substrates, and a narrow gap with a through hole is provided on the stratum; one side line of the two patches is connected to the stratum through a first metal via hole, and the other side lines are connected to the stratum through a second metal via hole, and the connection patch is connected to the rectangular patch through a third metal via hole passing through the stratum through hole. The relative DC bias voltages of the via holes on both sides and the middle via hole are adjusted, and the two PIN radio frequency switches are controlled to be in opposite states, respectively, so that the metasurface unit presents two states, which is equivalent to the top patch being physically rotated 180°, thereby realizing 1-bit transmission phase modulation.

Circuits and methods that provide wider bandwidth and smaller IM inductances for phase change material (PCM) based RF switch networks. The present invention recognizes that it is beneficial to consider the total high parasitic capacitance to ground of the various PCM switches in an RF switch network as constituting two or more separate capacitive contributions. This leads to several “split capacitance” concepts, including signal-path splitting, switch-block splitting, stacked-switch splitting, and splitting parasitic capacitances due to layout discontinuities, in which compensating impedance matching inductances are inserted between additive capacitances.

The present invention discloses a radio frequency switch chip and a radio frequency switch module, which relate to the field of radio frequency switches. The first area and the second area on the same substrate are two areas that can be physically separated. When the radio frequency switch of the required type can be realized by the first radio frequency switch group or the second radio frequency switch group alone, the entire radio frequency switch chip can be cut into two radio frequency switches for use. When the radio frequency switch of the required type needs to be realized by the first radio frequency switch group and the second radio frequency switch group at the same time, the entire radio frequency switch chip is directly used as a radio frequency switch. By reusing the first radio frequency switch group and / or the second radio frequency switch group on the same substrate, various types of radio frequency switches can be realized to meet various different needs, greatly reducing the complexity of the design and production process of the radio frequency switch and saving costs; the development cycle of the radio frequency switch can be effectively reduced, and the stocking cycle can be reduced.

This invention provides an automated testing device for UAV data links, including an industrial control computer, a display, a spectrum analyzer, a programmable DC power source, a programmable adjustable attenuator, a fixed attenuator I, a fixed attenuator II, a power divider I, a power divider II, an RF switch, a shielded box I, and a shielded box II. The software of the industrial control computer includes a system management module and an automated testing module. The advantages of this invention are: it uses general-purpose testing equipment, is based on a computer-automated program, and controls the settings of each testing device via a bus to simulate remote control, telemetry, image data transmission and reception, and bit error rate statistics; it achieves automated testing of core functional performance indicators of UAV data links such as power consumption, transmit power, spectrum, functionality, receiver sensitivity, bit error rate, and latency.