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2779 results about "Voltage divider" patented technology

In electronics, a voltage divider (also known as a potential divider) is a passive linear circuit that produces an output voltage (Vₒᵤₜ) that is a fraction of its input voltage (Vᵢₙ). Voltage division is the result of distributing the input voltage among the components of the divider. A simple example of a voltage divider is two resistors connected in series, with the input voltage applied across the resistor pair and the output voltage emerging from the connection between them.

Switch circuit and method of switching radio frequency signals

A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
Owner:PSEMI CORP

A digital high voltage DC power

The utility model relates to a digitized high voltage direct current power supply, and comprises a main power circuit, a digitized control circuit based on DSP and a control program of host computer based on PC, wherein the main power circuit comprises a three phase rectifying element [1], a soft start element [2], a filter element [3], a resonance inverting element [4], a high frequency and high voltage transformer [5], a doubling circuit [6] and a two-stage voltage divider [7]; the digitized control circuit based on DSP comprises an interface circuit of IPM drive signal, a high voltage feedback element, a resonance overcurrent protection element, a soft start circuit and a serial communication interface circuit. The voltage of power frequency electrical network is converted into DC voltage which is used as busbar voltage by three phase rectification, soft start and filter, and the busbar voltage is converted into 20KHz quasi-sine-wave by the resonance inverting element which is driven by a phase difference computed by the DSP according to feedback signal, and then 0-100Kv AC high voltage is output by the high frequency and high voltage transformer [5] and the doubling circuit [6]. The utility model adopts a host computer as a control device, and outputs the voltage via the control instructions of the DSP, therefore meets the requirements of voltage withstand test of insulation material.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI

Switch circuit and method of switching radio frequency signals

InactiveUS20050017789A1Improving RF switch isolationRaise the compression pointTransistorSolid-state devicesMOSFETEngineering
A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
Owner:PSEMI CORP
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