Oscillator device (10) comprising: - a
ring oscillator circuit (20) with at least one
delay stage (50), wherein an output of a last
delay stage is fed back to an input of a first
delay stage, wherein each of the delay stages (50) is configured to receive a charging current and provide a delay which depends on the charging current, and wherein at least one of the delay stages (50) comprises a
metal-
oxide-
semiconductor field-effect
transistor; - a bias circuit (30) comprising an output terminal coupled to an input terminal of the
ring oscillator circuit (20), wherein the bias circuit (30) is configured to receive a temperature-independent reference
voltage (Vref) and comprises a
current source with a primary n-channel
metal-
oxide-
semiconductor NMOS
transistor (M0), wherein the
current source is configured toto supply a control current (Iptat) to the
ring oscillator circuit (20) which is proportional to a difference between the temperature-independent reference
voltage (Vref) and a gate-source
voltage (Vgs) of the primary NMOS
transistor (M0), wherein the gate-source voltage (Vgs) of the primary NMOS transistor (M0) includes a
negative temperature coefficient, wherein the bias circuit (30) further comprises: - a
differential amplifier (A) configured to compare the temperature-independent reference voltage (Vref) with a measurement voltage, - a feedback transistor (M3) with a gate-drain path of the feedback transistor (M3) arranged in a
negative feedback loop of the
differential amplifier (A), - a
resistor network (R),wherein a drain of the feedback transistor (M3) is coupled to a first terminal (1) of the
resistor network (R) and a drain of the primary NMOS transistor (M0) is coupled to a second terminal (2) of the
resistor network (R) and the measurement voltage is tapped at the first terminal (1) of the resistor network (R), and a
capacitor coupled to an output of the
differential amplifier (A) and the first terminal (1).