The invention relates to a circuit and a method for measuring the
threshold voltage of a PMOS (P-channel
Metal Oxide Semiconductor)
transistor in a
radiation environment, in particular to an on-
chip measuring circuit and a method for the
threshold voltage of the PMOS
transistor and a total
radiation dose monitoring circuit, and solves the problem that the existing device for measuring the
threshold voltage of the PMOS
transistor cannot monitor the change of the threshold
voltage on line. Or the size is large and the precision is low. According to the on-
chip measuring circuit for the threshold
voltage of the PMOS transistor, a differential mode is adopted, the subtracter circuit is used for sampling the
voltage at the source end and the drain end of the PMOS transistor, common-mode
noise generated by the outside to a measured
signal can be effectively eliminated, the on-
chip measuring circuit can be realized, the size and the weight of the measuring circuit are effectively reduced, and the cost is reduced. And real-time monitoring of the threshold voltage of the PMOS transistor is realized. Meanwhile, the invention further provides a total
radiation dose monitoring circuit, signals are processed and amplified at the near end of the PMOS transistor, the strength and the anti-interference capacity of the measured signals can be effectively improved, and the size is further reduced.