An anti-noise-interference high-voltage side gate driving circuit comprises a high-voltage level shifting circuit, an RS latch and a driver, the high-voltage level shifting circuit converts the two input low-voltage pulse signals into two high-voltage pulse signals to be output, the two high-voltage pulse signals are respectively processed and then enter the RS latch, the RS latch outputs the signals into the driver, and the driver outputs a driving signal to control an external power tube be to switched on and off. According to the anti-noise-interference high-voltage side gate driving circuit, the high-voltage level shifting circuit is improved, the improved high-voltage level shifting circuit comprises two completely-same independent parts, and each independent part comprises two LDMOSs, a delay unit, a Zener voltage regulator tube, a capacitor, a resistor and a middle-voltage PMOS. The circuit can remove d(i)V(/i)/dt interference noise and differential mode noise, the transmission of normal signals is not affected while the noise interference is removed, and meanwhile the allowable negative VS voltages are increased.