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2591 results about "Voltage pulse" patented technology

Electronic paper display device, manufacturing method and driving method thereof

An electronic paper display device, a manufacturing method and a driving method thereof are disclosed. Micro protrusion members are formed at electrodes or at insulating layers. Consequently, the electrophoretic particles are prevented from being securely attached to an upper or the lower structure, and therefore, the quality of pictures is improved, and the contrast ratio of the pictures is increased. The relative sizes and the injection amounts of two kinds of electrophoretic particles are changed such that the relative sizes and the injection amounts of the electrophoretic particles are different from each other. Consequently, the driving voltage is lowered by excessively electrifying the electrophoretic particles of one kind. Protrusions are formed at the corresponding electrode such that a relatively large electric field is distributed around the electrode at which electrophoretic particles are located in the initial stage of voltage application. Consequently, the electrophoretic particles are easily separated from the electrode and moved even at low driving voltage. As such, the voltage level of the driving voltage pulse is lowered. Consequently, it is possible to further increase the response speed of the driving devices and to lower the internal voltage of the devices, thereby reducing the costs related to the driving devices.
Owner:LG ELECTRONICS INC

Staircase program verify for multi-level cell flash memory designs

A system for concurrently verifying programming of logical data in a multi-level-cell (MLC) flash memory device having a plurality of memory cells each configured to store N bits of logical data where N>=2. The MLC flash memory device has a plurality of memory cells capable of being storing N-bits of data in one of 2N distinct data storage levels, each data storage level corresponding to a discrete N-bit combination of logical data. The data storage levels include a default level, called the erased level, and 2N-1 program levels, including a lowest program level, 2N-2 intermediate program levels and a highest program level. For each memory cell to be verified as programmed, an N-bit combination of data to be verified is loaded into a program-verify circuit and a stepped voltage pulse having 2N-1 steps is applied to each memory cell. The stepped voltage pulse includes an initial step, at least one intermediate step and a final step with the initial step substantially equal to a program-verify voltage for the highest program level of the MLC flash memory within a the highest program level, each successive intermediate step is substantially equal to a program-verify voltage corresponding to an intermediate program level and the final step of the voltage pulse is substantially equal to a program-verify voltage for the lowest program level. Concurrently with the application of the stepped voltage pulse to each memory cell, the data storage level is verified as substantially within a program level corresponding to the N-bit combination for the memory cell. Subsequent to verifying the data storage level for a memory cell, the verified memory cell is inhibited form further application of a program pulse.
Owner:MONTEREY RES LLC
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