The invention discloses a pi-shaped
chip high-
voltage pulse attenuation network
resistor and a manufacturing method thereof, and belongs to the technical field of electronic components. The network
resistor structure comprises a
ceramic substrate, a resistive layer, a resistive layer R1, a resistive layer R2, a resistive layer R3, a
surface electrode, a back
electrode, a side
electrode, an
electrode nickel-plated layer, an electrode lead-
tin-plated layer, a glass
protection layer and an
epoxy resin layer. The manufacturing method comprises the following steps: printing a
surface electrode on the upper surface of a
ceramic substrate, printing a back electrode on the lower surface of the
ceramic substrate, printing a resistive layer bridged on the
surface electrode, printing protective glass on the resistive layer, carrying out
laser resistance trimming on the resistive layer, printing an
epoxy resin protective layer and a mark on the protective glass, and
sputtering a
metal layer on the end surface. And preparing an electrode
nickel-plated layer and a lead-
tin-plated layer on the end surface. The problems that in the prior art, overheat
burnout is likely to occur, electrodes are likely to be eroded in a humid or
sulfur-containing environment, and the manufacturing precision and stability are difficult to improve and control are solved. The
resistor is widely applied to the technical field of attenuation network resistors.