46results about How to "Avoid programming" patented technology

A non-volatile memory system is programmed so as to reduce or avoid program disturb. In accordance with one embodiment, the storage elements of a NAND string are partitioned into at least two regions. A first boosting voltage is applied to the first region of the string while a second larger boosting voltage is applied to the second region. The first region includes the addressed row or selected word line for programming. The boosting voltages are applied to the NAND strings of a block while the NAND strings are being inhibited from programming. In this manner, the second boosting voltage can be made larger without inducing program disturb on the memory cells receiving the larger boosting voltage. The boosted voltage potentials of the NAND string channels are trapped within the first region by lowering the boosting voltage on one or more bounding rows. The second boosting voltage is then lowered and data is applied to the bit lines of the NAND strings to select the appropriate strings for programming. The trapped voltage potential discharges or remains in the boosted state for programming depending on whether a string is selected for programming or is to remain inhibited from programming.

A graphical user interface, implemented in a standard system management environment, accepts selections of logical instruction steps that are external to the standard system management environment. The logical instruction steps may include process steps, specify chemical formulae, or identify other components of master recipes that control drug manufacture or dispensing, as examples. The external logical instruction steps are introduced into the standard system management environment and approved. The standard system management environment subsequently controls the drug manufacturing or dispensing processes according to the external logical instruction steps.

A memory device comprises a drain select line, a source select line, word lines, and a string connected between a bit line and a common source line. A program-inhibited voltage is applied to the bit line and a first voltage of a positive potential is applied to the drain select line. A second voltage for activating a programmed memory cell is applied to a word line to which the programmed memory cell is connected. A programming operation is performed by applying a program voltage to a selected word line and applying a pass voltage to the unselected word lines.

A data storage device may include a memory die. The memory die includes a memory and a latch. A method may include receiving a command corresponding to a write operation to write information to the memory. The method may further include loading a set of bits into the latch prior to receiving the information at the memory die. The set of bits includes at least a first bit having a first value and a second bit having a second value that is different than the first value. The method further includes receiving the information at the memory die and overwriting at least a portion of the set of bits at the latch with the information.

An eFuse data alignment verification apparatus and method are provided. Alignment latches are provided in a series of latch units of a write scan chain and a logic unit is coupled to the alignment latches. A sequence of data that is scanned-into the series of latch units of the write scan chain preferably includes alignment data values. These alignment data values are placed in positions within the sequence of data that, if the sequence of data is properly scanned-into the series of latch units, cause the data values to be stored in the alignment latches. The logic unit receives data signals from the alignment latches and determines if the proper pattern of data values is stored in the alignment latches. If the proper pattern of data values is present in the alignment latches, then the data is aligned and a program enable signal is sent to the bank of eFuses.

A method and system is disclosed for prohibiting program disturbance in a memory array device. The system comprises a bit-line decoder coupled to each bit-line of the memory array for providing a predetermined current diverting path, a biased resistance module placed on the bit-line of the flash memory array through which a pull-up current provided by a predetermined power supply is diverted by the bit-line decoder when a cell of the flash memory array connecting to the bit-line is programmed. The programming current of the cell of the flash memory array is stabilized due to the diverted pull-up current. This invention can reduce variance of programming current by the bit-line decoder diverted pull-up current, so can obtain more exact programming current to get preferable productivity, and this mechanism can be used for upgrading bit-line.