442results about How to "Small variation" patented technology

Thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are easily arranged in a matrix over a large substrate and have small characteristic variations. With amplifier circuits and driver circuits of display elements which include the thin film transistors including an oxide semiconductor containing indium, gallium, and zinc with small characteristic variations, intensity distribution of light received by the photodiodes arranged in a matrix is converted into electrical signals with high reproducibility and output, and the display elements arranged in a matrix can be uniformly driven.

A photoelectric conversion device includes a light detection circuit which includes an optical sensor to output a current signal corresponding to illuminance and a current-voltage conversion circuit to convert the current signal output from the optical sensor into a voltage signal; an amplifier to amplify the voltage signal output from the light detection circuit; a comparison circuit to compare voltage output from the amplifier and reference voltage and output the result to a control circuit; and the control circuit to determine an illuminance range to be detected depending on the output from the comparison circuit and output a control signal to the light detection circuit. The current-voltage conversion circuit has a function of changing a resistance value in accordance with the control signal.

An optical film in which a retardation film is laminated on one side of a polarizing plate, in which a transparent protective film is laminated on both sides of a polarizer, so that an absorbing axis of the polarizing plate and a slow axis of the retardation film may be perpendicular or may be parallel to each other, wherein a value Nz represented by Nz=(nx1-nzi)/(nx1-ny1) satisfies a range of 0.4 through 0.6, and an in-plane retardation Re1=(nx1-ny1)xd1 is 200 through 350 nm, where, a direction of the retardation film in which an in-plane refractive index within the film surface concerned gives a maximum is defined as X-axis, a direction perpendicular to X axis is defined as Y-axis, a thickness direction of the film is defined as Z-axis, refractive indexes in axial direction are defined as nx1, ny1, nz1, respectively, and a thickness of the film is defined as d1 (nm), and the transparent protective films comprise a thermoplastic saturated norbornene resin, may realize an easily viewable display with high contrast ratio in a wide range when applied to a display system and that may provide a retardation value stabilized under conditions of high temperature or high humidity.

The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer, forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.

An optical fiber which, at an optical fiber connecting end having a plurality of voids around the periphery of a core, has a light-permeable substance, such as a resin or glass whose refractive index is lower than that of quartz type substances, filled in the voids adjacent to the connecting end. An optical fiber connecting section where an optical fiber having a plurality of voids in a clad around the periphery of a core is connected to another optical fiber, wherein the optical fiber is connected end-to-end to aforesaid another optical fiber through a refractive index matching agent whose refractive index at the minimum temperature in actual use is lower than that of the core.

A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield contacts the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading. The top surface of the seed layer may be amorphous or crystalline to promote HB easy axis perpendicular growth.

An optical film in which a polarizing plate and a retardation film are laminated so that an absorbing axis of the polarizing plate and a slow axis of the retardation film may be perpendicular or may be parallel to each other, wherein a value Nz represented by Nz=(nx1-nz1)/(nx1-ny1) satisfies a range of 0.4 through 0.6, and an in-plane retardation Re1=(nx1-ny1)xd1 is 200 through 350 nm, where, a direction of the retardation film in which an in-plane refractive index within the film surface concerned gives a maximum is defined as X-axis, a direction perpendicular to X axis is defined as Y-axis, a thickness direction of the film is defined as Z-axis, refractive indexes in axial direction are defined as nx1, ny1, nz1, respectively, and a thickness of the film is defined as d1 (nm), may realize an easily viewable display with high contrast ratio in a wide range when applied to a display system, preferably used for a liquid crystal display operating in IPS mode.

A 6-axis force sensor includes bumper 10 with bumper axis 12 and press member 11 which has four horizontal beams 11a, 11b, 11c and 11d in a cross shape with end, side and bottom faces. Sensors 31, 32, 33, and 34 on end faces sense force in one direction and sense a moment acting on opposite end faces. Sensors 41, 42, 43, and 44 on side faces sense force in a second direction transverse to the first direction and sense a moment acting on opposite side faces. A film 20 on the bottom faces has four sensors 21, 22, 23, and 24, one on each bottom face, for sensing force in a direction transverse to the first and the second directions and sensing a moment acting on opposite sensors on the film.

The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer. The present invention makes it possible to obtain an interconnect structure having excellent switching characteristics and high stress resistance, and in particular, showing a small variation of threshold voltage before and after the stress tests, and thereby having high stability.

An ultrasonic diagnostic apparatus by which highly quantitative IMT (intima media thickness) measurement with little variations depending on examiners can be performed. The ultrasonic diagnostic apparatus includes: an ultrasonic probe for transmitting ultrasonic waves to an object to be inspected and receiving ultrasonic echoes generated by reflection of the ultrasonic waves in the object to output reception signals; a signal processing unit for performing at least envelope detection processing on the reception signals outputted from the ultrasonic probe to generate envelope data; a boundary detecting unit for detecting two boundaries representing intima media of a blood vessel based on difference or differential of values of the envelope data and amounts of change in the values of the envelope data; and an IMT calculating unit for calculating an IMT of the blood vessel based on the two boundaries detected by the boundary detecting unit.

To provide a highly reliable display device whose electrical element is applied with a low voltage. The display device is an active matrix FED display device whose pixel has an individual extraction gate electrode, an emitter array, a driving transistor which is connected to the emitter array in series, a potential control circuit which controls the potential of the extraction gate electrode, and a circuit which includes a switching element and a voltage holding element. By varying the potential of the extraction gate electrode in accordance with Vgs of the driving transistor, the active matrix driving method is performed by connecting a driving transistor to the emitter array in series and voltage which is applied to the driving transistor can be reduced.

A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable semiconductor device including an oxide semiconductor layer and exhibiting stable electric characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. In the semiconductor device, an oxide semiconductor layer is used for a channel formation region, a multilayer film which includes an oxide layer in which the oxide semiconductor layer is wrapped is provided, and an edge of the multilayer film has a curvature in a cross section.

The invention relates to a quantitative detection kit for NSE and a preparation method and application of the quantitative detection kit. The kit comprises a calibrator, a magnetic separation reagent, an enzyme reactant, a stable reinforcing agent and a chemiluminiscent substrate, wherein the calibrator is obtained by treating NSE antigen through a reducing agent solution and diluting the NSE antigen to a buffer solution containing a nonionic surfactant; the magnetic separation reagent is obtained by immunofixation of a biotinylation antibody and streptavidin magnetic particles; the enzyme reactant comprises a NSE tracing antibody marked by alkaline phosphatase; and the stable reinforcing agent comprises a multicomponent immune compound interfered by an anti-heterophilic antibody. The invention further relates to a preparation method of the kit and a method of applying the kit to quantitatively detect a tumor marker NSE. The kit is reliable in performance, high in flexibility, and wide in linear range, and matched up with an automatic instrument for use. At present, the kit has already obtained a third registration certificate of a diagnostic reagent in SFDA (State Food and Drug Administration).

A variable power relay optical system comprising: a variable power lens performing zooming a secondary image based on light from a primary image; and a rear group forming the secondary image based on the light passing through the variable power lens; the variable power lens consisting of, in order from the primary image side, a first group having positive power, a second group having negative power, a third group having positive power, and a fourth group having positive power, upon zooming from a high magnification end to a low magnification end, the fourth group being moved to the secondary image side, and a distance between the first group and the second group increasing, positions of the primary image and the secondary image, an entrance pupil of the variable power relay optical system, a pupil of the variable power lens, and an exit pupil of the variable power relay optical system being substantially kept constant, and the pupil of the variable power lens being disposed to the secondary image side of the last surface of the variable power lens.

The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability.

A matrix is formed using a plurality of memory cells in each of which a drain of the writing transistor is connected to a gate of a reading transistor and one electrode of a capacitor. A gate of the writing transistor, a source of the writing transistor, a source of the reading transistor, and a drain of the reading transistor are connected to a writing word line, a writing bit line, a reading bit line, and a bias line, respectively. In order to reduce the number of wirings, a writing word line to which the gate of the writing transistor is not connected is substituted for the reading word line. Further, the writing bit line is substituted for the reading bit line.

A sense amplifier comprises: a differential amplifier circuit configured to generate an amplified signal depending on a difference in voltage between bit lines; an output circuit receiving the amplified signal; and a load. The differential amplifier circuit comprises: a first output node supplying the amplified signal to the output circuit; and a second output node symmetrically placed with respect to the first output node and connected to the load. The output circuit comprises an output terminal for outputting an output signal generated based on the amplified signal. In response to a control signal, the load switches between a first capacitance value with which an offset voltage at the output terminal becomes a first voltage and a second capacitance value with which the offset voltage becomes a second voltage

A resistive random access memory device, a method for manufacturing the resistive random access memory device, and a method for operating the resistive random access memory device are disclosed. The resistive random access memory device includes a resistive switching memory element including two electrodes and a layer of variable-resistance material between the two electrodes, wherein the layer of variable-resistance material exhibits bipolar resistive switching behavior; and a Schottky diode including a metal layer and a p-doped semiconductor layer which contact each other, wherein the metal layer of the Schottky diode is coupled to one of the two electrodes of the resistive switching memory element. The present disclosure provides the resistive random access memory device operating in bipolar resistive switching scheme.

The invention discloses a C-reactive protein quantitative determination kit, belonging to the field of biological immune in-vitro diagnosis of medical devices. The kit comprises a calibrator, a quality control product, an antibody reagent, a magnetic particle reagent and a luminescent substrate. The invention also discloses a preparation method of the kit and a method for detecting C-reactive protein by using the kit. According to the preparation method disclosed by the invention, the antibody reagent is prepared from a C-reactive protein-coated antibody labeled by fluorescein isothiocyanate and a C-reactive protein-labeled antibody labeled by alkaline phosphatase, and the magnetic particle reagent is prepared by coupling an anti-fluorescein-isothiocyanate antibody with carboxyl magnetic beads so as to ensure that uniform mixing and separation are easily carried out in immunoreaction, and the reaction speed can be greatly increased; and a novel chemical luminescent substrate ALPS is used as the substrate, so that the sensitivity and specific performances of the kit can be improved. The detection kit disclosed by the invention is reliable in performance, high in sensitivity and wide in linear range, and can be matched with semi-automatic and full-automatic instruments for use.