6533results about "Photomechanical exposure apparatus" patented technology

The invention relates to an automatic visual alignment method and system based on a photoetching machine and a storage medium, and relates to the technical field of optical alignment. The automatic visual alignment method comprises the following steps: sequentially focusing image taking areas according to a preset multi-light-source visual focusing mechanism, recording corresponding global focusing parameters, and collecting corresponding original single-layer images; screening all the original single-layer images according to a preset image definition threshold value to obtain a to-be-detected image, and extracting corresponding key channel features; calculating a comprehensive feature error of the key channel features according to a preset image hierarchy template, and judging an initial focusing state in combination with a preset parameter error interval; correcting the global focusing parameter according to the initial focusing state in combination with a preset cooperative calibration mechanism, generating a corresponding control signal, and cooperatively tuning the corresponding visual equipment; through multi-light-source multi-time visual image capturing, the problem of poor alignment precision caused by light source errors and image capturing errors is reduced, the image matching accuracy is improved, and the visual alignment precision is improved.

The invention provides a manufacturing and processing photoetching method and system of a display panel, and relates to the technical field of photoetching processing. According to the method, the display panel substrate is subjected to cleaning, prime coating and partition division to form an imageable micro-mark covering all exposure partitions, and the thickness and the uniformity are measured after lower-layer supporting glue and upper-layer imaging glue are sequentially formed; carrying out in-situ acquisition and modeling by taking the micro-mark as an imaging object, and generating an exposure correction instruction and an overlapping energy table; performing partition exposure and real-time correction by using a digital micromirror, and completing development to obtain an anti-etching window with a steep side wall; and setting an etching window according to the exposure record and the window quality data, and executing low-damage etching and defect recovery to form stability evaluation data. According to the method, comprehensive improvement of high-precision exposure, pattern consistency and electrical stability is realized.

The invention discloses a method for clearly imaging a mask under an optical objective, and relates to the technical field of optical detection and image processing, and the method comprises the following steps: S1, constructing a light intensity distribution model based on the boundary condition of the field of view of the optical objective in combination with the reflection characteristic and incident angle change rule of a metal edge material, and determining the coverage range of metal edge reflection crosstalk, generating a mask boundary interference prediction map; s2, according to the mask boundary interference prediction map, performing region division on the micro-reflectivity image, extracting brightness gradient characteristics of reflectivity lifting in an interference region, and generating a brightness gradient parameter set required by image filtering; the method is based on light intensity modeling, fusion direction filtering, pixel stripping, gradient reconstruction and credibility weighted fusion, realizes closed-loop control from interference prediction to pixel restoration, has high resolution and adaptivity, can accurately strip edge reflection artifacts and restore a real image structure, remarkably reduces misjudgment and rework rate, and is suitable for large-scale popularization and application. And the mask yield and the stability of the detection system are improved.

The invention provides an optical proximity correction method and system based on mask error model optimization, and a terminal, and the method comprises the steps: building a data sample set containing a plurality of process conditions through obtaining a large amount of mask manufacturing data under a specific photoetching process; and based on the sample set, constructing a physical optical sub-model and a machine learning sub-model to form a mask error model for outputting a final mask key size value. And then, according to a plurality of preset alternative weight coefficient combinations, reconstructing an objective function which introduces a mask error term, calculating corresponding objective function values, and correcting the photoetching pattern by using an OPC algorithm corresponding to each objective function value to obtain performance index data so as to determine an optimal weight coefficient combination. And finally, optimizing the OPC algorithm by using the target function of the optimal combination, thereby realizing the accurate correction of the photoetching pattern, and improving the precision and yield of semiconductor manufacturing. According to the method, the mask error model comprehensively considering physical optics and machine learning is established, and the OPC process is introduced, so that the influence of the mask error can be predicted and compensated more accurately, the critical dimension deviation and the like are reduced, and the device performance and the yield are improved. The method can adapt to different process conditions, and parameters and weight coefficients can be dynamically adjusted. And moreover, rework can be reduced, automatic adjustment is realized through closed-loop feedback control, the production stability and efficiency are improved, and the cost is reduced.

A control device (100) for controlling a number N, with N ≥ 1, of actuators (200) for actuating N optical elements of an optical system, comprising a control node (K2) coupling to the actuator (200) for providing a control voltage (V2) for the actuator (200), an amplifier (110) configured to receive a supply voltage (V1) provided at an input node (K1) and to provide an output voltage (V3) at an output node (K3), wherein the amplifier (110) comprises a plurality M, with M ≥ 2, of current sources (111, 112) comprising at least one charge-controlled current source (112) and a holding capacitor (113) for maintaining the level of the provided output voltage (V3), and a buffer coupled between the output node (K3) and the control node (K2). (120), which is designed to,to decouple the control node (K2) from the output node (K3) and to provide the control voltage (V2) for the actuator (200) based on the level of the output voltage (V3) of the holding capacitor (113).

Provided are a photosensitive transfer material capable of producing a resin pattern with reduced defects, a method for producing a resin pattern using the photosensitive transfer material, a method for producing circuit wiring, and a method for producing a touch panel, and a polyethylene terephthalate film. The present invention provides a temporary support and a photosensitive resin layer disposed on the temporary support, and the number of foreign particles having a major axis of 3 μm or more contained in the temporary support is 0.5 / mm 2 The following are photosensitive transfer materials and their applications.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

The invention discloses an off-line adjusting device and method for light spot position offset adjustment, and belongs to the technical field of optical precision adjustment. The device comprises a single-beam light-emitting direction adjusting device, a single-beam light-emitting position adjusting device and a multi-beam angle adjusting device which can be formed on the same off-line platform by configuring different detection units. The method comprises the following steps of: calibrating a light source by using the devices in sequence, and constructing an ideal light source assembly with accurate direction, accurate position and multi-beam parallelism; the whole device is installed to a complete machine system to serve as an absolute reference, and a complete machine optical element is adjusted to make a light spot reach a preset position; and finally, replacing with a customized light source and carrying out fine adjustment by taking the calibrated optical element as a reference. According to the method, decoupling of light source calibration and optical element calibration is achieved through the process of establishing the benchmark offline, transmitting the benchmark through the whole machine and customizing light source adaptation, the installation and adjustment precision, efficiency and repeatability are remarkably improved, and dependence on operation experience is reduced.

The invention discloses a fiber bragg grating femtosecond laser direct writing system and method based on light field regulation and control. The system comprises a femtosecond laser source, a polarization control module, a light beam expanding module, a light field modulation module, a 4f filtering imaging module, an oil immersed objective lens, a precision positioning and optical fiber clamping module, an observation module and a computer control module. The method comprises the following steps: firstly, fixing a standard single-mode optical fiber to be processed on a three-dimensional precision displacement platform; then programmable wavefront modulation is carried out on the femtosecond laser through a light field modulation module, and a multi-focus array is generated; then focusing the multi-focus array into the fiber core through an oil-immersed objective lens to realize one-time parallel inscribing of a plurality of refractive index modulation RIM regions; and finally, the computer control module controls the three-dimensional precision displacement platform to move at a constant speed in the axial direction of the optical fiber, and parallel integrated inscribing of a plurality of FBG structures is completed. According to the invention, the inscribing precision and inscribing efficiency of fiber bragg grating femtosecond laser direct writing are improved.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and / or patterning performance of the imaging layer.

The present invention relates to photohardenable compositions and methods of forming an object, the method preferably including a photohardenable composition described herein. Preferred photohardenable compositions and methods include a photohardenable resin component, a first photoinitiator that is activatable by exposure to light at a first wavelength and light at a second wavelength, and a second photoinitiator that is activatable by exposure to light at a third wavelength, wherein the first, second, and third wavelengths are not the same, and the third wavelength is shorter than the first wavelength and the second wavelength. Preferred first photoinitators include photoswitchable photoinitiators. Preferably the second light-activated photoinitiator comprises a free-radical photoinitiator. Hardenable resin compositions and methods of forming an object including the hardenable resin composition are also disclosed.

In the case of forming a fine resist pattern, it is desired to further reduce the roughness of the resist pattern.SOLUTION: A substrate processing apparatus comprising: a heat treatment unit configured to bake a resist film; an exposure unit configured to irradiate the resist film having a portion irradiated with a first radioactive ray with a second radioactive ray; a development unit configured to form a resist pattern by development for removing a part of the resist film; and a control unit configured to control the exposure unit such that the second radioactive ray is collectively irradiated to an entire region of the resist film including the portion irradiated with the first radioactive ray and a portion other than the portion irradiated with the first radioactive ray. The first radiation is ionizing radiation or non-ionizing radiation, and the second radiation is non-ionizing radiation. When the first radiation is non-ionizing radiation, the second radiation is non-ionizing radiation having a wavelength longer than the wavelength of the first radiation. The resist film includes a metal oxide photoresist material.SELECTED DRAWING: Figure 1

The invention relates to the field of integrated circuit manufacturing, in particular to a light source mask collaborative optimization method and device, and the method comprises the steps: obtaining an initial light source and an initial mask pattern; the initial mask pattern is a binary image; determining the adjusted initial light source and the adjusted initial mask pattern corresponding to the minimum function value of the light source mask collaborative optimization loss function as an optimized light source and an optimized mask pattern; the light source mask collaborative optimization loss function comprises a main pattern edge error item and a sub-resolution auxiliary pattern printing item; obtaining a simulation photoetching image, and judging whether a sub-resolution auxiliary pattern is printed in the simulation photoetching image or not; when the printed sub-resolution auxiliary pattern exists, outputting the latest optimized mask pattern as a process iteration mask pattern; calculating a proportion value; and when the proportion value does not exceed the qualified upper limit value, outputting an optimized light source and process iteration mask pattern. The method can ensure that no sub-resolution auxiliary pattern is printed and a larger process window is reserved.

The invention discloses a high-precision temperature control method and system for a photoetching machine, and belongs to the technical field of photoetching machine temperature control. The method comprises the following steps: acquiring a temperature array on the lower surface of a mask, heat flux density distribution of a bearing surface of an exposure table and a hot pressure difference signal of an air floating layer, carrying out feature coding, and constructing a high-dimensional thermal coupling situation feature matrix; a dynamic thermal weight correlation map is generated based on the matrix, exposure key nodes serve as anchor points, and explicit modeling is conducted on nonlinear thermal paths among the nodes through a graph neural network; further calculating the spatial gradient change rate of the heat flux per unit area of the mask region according to the thermal weight map, and mapping the spatial gradient change rate to an exposure table temperature control array to generate a nonlinear control function curved surface; and dynamically adjusting power output and response delay parameters of the local heating unit according to the control function, so that dynamic thermal field equalization with nanoscale precision can be realized, thermal drift is effectively inhibited, and the photoetching imaging quality and the yield of an advanced process are improved.

The invention discloses an overlay error real-time correction system based on image recognition and dynamic fitting, and belongs to the field of semiconductor advanced packaging and manufacturing. The system comprises an image acquisition module, an error decoupling module and a dynamic compensation module to form closed-loop control. The image acquisition module adopts a high-resolution linear array CCD (Charge Coupled Device) and an AI (Artificial Intelligence) algorithm to realize high-speed and high-precision mark identification and error quantization; the error decoupling module performs decoupling and trend prediction on system errors and random errors by using PCA, a region weight matrix, LSTM and the like; and the dynamic compensation module realizes mu s-level partition graph compensation by a DMD optical system based on an error thermodynamic diagram through heterogeneous platform operation. The system supports the real-time processing of more than 100Hz, the average overlay error is less than or equal to 0.3 mu m and the response time is less than 5 seconds in the FOPLP and other processes, the problems of lag, low precision and the like of the traditional method are effectively solved, and the manufacturing yield and the production line efficiency are remarkably improved.

The invention relates to the technical field of photoresist, in particular to a color photoresist spraying and developing process for a high-resolution display panel, which comprises the following steps: S1, preparing composite color photoresist; s2, substrate pretreatment; s3, a spraying process; s4, pre-baking is carried out; s5, exposure is carried out; s6, developing; s7, carrying out post-baking; by optimizing the components and process parameters of the color photoresist, the core problems of difficult high-resolution forming, poor film adhesion and insufficient solvent resistance in the traditional process are effectively solved: on one hand, the modified resin and the fluorine-containing monomer are combined and matched with the plasma substrate for pretreatment, so that the adhesion grade of the photoresist film and the substrate reaches 0 grade; the solvent wiping resistance is more than 300 times, so that the long-term use reliability requirement of a terminal product is met; and on the other hand, spraying, pre-baking, exposure and developing parameters are synergistically regulated and controlled, and a stable color paste dispersion system is combined, so that high-resolution pattern forming greater than or equal to 590PPI is realized.

A method for mounting, preferably bonding, an optical element (14) for microlithography to a mounting element (2) is presented and described, as is a mounting device (1) for mounting, preferably bonding, an optical element (14) for microlithography to a mounting element (2). The described method and mounting device are proposed to enable fast and precise mounting of an optical element (14) for microlithography to a mounting element (2), regardless of the diameter of the receiving opening (11) of the mounting element (2). An optical module for microlithography is also described.

The invention discloses an SRAF adding method and device, a storage medium and electronic device.The SRAF adding method comprises the steps that a target layer layout, an original SRAF and a process design rule are obtained; extracting target features from the target layer layout, and extracting a minimum safety interval from the process design rules; expanding the target feature and the original SRAF according to the minimum safety distance to form a blocking region; calculating a difference set of the blocking region and the target layer layout boundary to obtain a plurality of blank regions; generating a plurality of candidate SRAFs based on the blank area, and determining a target SRAF from the plurality of candidate SRAFs according to a preset rule; and combining the target SRAF with the candidate SRAF to generate a final SRAF set. According to the embodiment of the invention, the blank area can be automatically identified, and the SRAF can be adaptively generated in the blank area.

To provide technology suitable for performing highly precise measurement of optical characteristics.SOLUTION: An evaluation method for evaluating an optical characteristic of a projection optical system is provided. The evaluation method includes a measurement step of illuminating a test reticle having a test pattern disposed on an object plane of the projection optical system, and measuring an amount of positional deviation of an image of the test pattern formed on an image plane of the projection optical system, and an estimation step of estimating the optical characteristic of the projection optical system based on a result of the measurement, wherein in the estimation step, the optical characteristic is estimated using a polynomial model including a regularization term.SELECTED DRAWING: Figure 2

The invention relates to the technical field of semiconductor detection, in particular to a wafer bright field illumination and imaging system, a wafer defect detection device and a wafer defect detection method, the system comprises an illumination module, a beam combining module, an objective lens module and an acquisition imaging module; wherein the illumination module generates an illumination light beam adaptive to a wafer detection view field; the beam combining module realizes non-interference separated transmission of an illumination light path and an acquisition light path through a reflection area and a transmission area which work independently; the objective lens module converges the light beams reflected by the reflection area to the surface of the wafer, and controls the light beams to form illumination only at the edge of an entrance pupil so as to realize off-axis illumination; meanwhile, the reflected light beams on the surface of the wafer are collimated and then transmitted to the transmission area; and the acquisition imaging module receives the parallel light beams, converts optical signals into electric signals, and generates a wafer surface image. According to the invention, the problems of high energy loss, high cost, low detection rate and insufficient resolution of a traditional bright field detection system are effectively solved.

The invention relates to the technical field of computational lithography, in particular to a curve OPC verification method, device and equipment and a storage medium. Determining a target curve segment on the target curve graph; determining sampling points on the target curve segment, and acquiring deviation distances from the sampling points to the to-be-checked simulation curve graph along normal directions of corresponding tangent lines, and curvatures corresponding to the sampling points; according to the deviation distance and curvature of each sampling point, determining a curve EPE of the simulation curve graph to be checked on the target curve segment; and when the curve EPE exceeds the EPE threshold value, determining the to-be-checked simulation curve graph as a to-be-corrected simulation curve graph. According to the method, different weights are given to the sampling points with different curvatures according to the corresponding curvatures, so that the accuracy of curve OPC verification is greatly improved, and the calculation power consumption in the calculation process is remarkably reduced.

The invention relates to the technical field of optical waveguide master mask manufacturing processes, and discloses a monitoring and correcting method and system for an optical waveguide master mask etching process, and the method comprises the steps: setting a plurality of monitoring regions and corresponding monitoring point positions, and collecting the real-time monitoring data of each monitoring point position; inputting real-time monitoring data into the etching analysis model to obtain a real-time etching coefficient of each monitoring point; judging whether correction is needed or not according to the real-time corrosion coefficient, and if yes, determining a plurality of local defect areas and generating a correction instruction; a correction instruction is issued, a feedback time node is set, a correction data packet of each local defect area is collected according to the feedback time node, a correction evaluation value is generated, whether the local defect area is corrected again or not is judged according to the correction evaluation value, and real-time monitoring and accurate correction of the etching process are effectively achieved. The problems that in a traditional etching process, defects are known after being perceived due to lack of real-time monitoring, and resources are wasted due to global reworking are solved.

The invention relates to an optical proximity effect correction method and device, equipment and a storage medium. The optical proximity effect correction method comprises the steps of obtaining a first correction basis of a target pattern based on a plurality of patterns included in the target pattern; according to the first correction basis, determining a first preset compensation value corresponding to the first correction basis from a first process compensation value table; and correcting the initial layout corresponding to the target pattern into a first corrected layout according to the first preset compensation value. The optical proximity effect correction method can realize efficient development.

The invention discloses a logic chip mask defect detection method, and relates to the technical field of integrated circuit manufacturing, and the method comprises the following steps: S1, constructing a scattering response model of sub-wavelength inorganic particles on the surface of a mask, and constructing a scattering response model of sub-wavelength inorganic particles on the surface of the mask under a set multi-angle polarized light incidence condition; non-linear disturbance influence of inorganic particles with different particle sizes on the reflected light phase in each incident polarization state is simulated, and a scattering response template containing standard phase disturbance characteristics is generated; and S2, based on a scattering response template, carrying out pixel-by-pixel matching analysis on the acquired multi-angle polarization phase diagram on the surface of the mask, identifying a local area matched with the template, and marking the local area as a suspected scattering interference area. According to the method, through construction of the scattering response template and multi-angle polarization consistency analysis, accurate distinguishing of artifacts and real defects is achieved, the recognition precision and stability under complex interference are improved in combination with structure retention type phase reconstruction and dynamic threshold recognition, and mask quality control and photoetching yield improvement are facilitated.

The embodiment of the invention provides a mask plate group, a manufacturing method thereof, and a mask plate imaging deviation correction method and system. The mask plate group comprises a plurality of mask plates; in the process of performing optical imaging on the plurality of masks, the theoretical optimal focusing values of the mask patterns on the plurality of masks are the same; wherein the mask patterns on the plurality of mask plates comprise the same monitoring pattern; the monitoring pattern is used for carrying out optical imaging deviation correction on the mask pattern on the mask plate, so that the mask pattern on the mask plate is subjected to optical imaging in the process of carrying out optical imaging on the plurality of mask plates; and the offset of the actual optimal focusing value of the mask patterns on the plurality of masks relative to the theoretical optimal focusing value is within a specified numerical range of 7.0%-7.5% of the technological process node corresponding to the mask group. According to the embodiment of the invention, the offset of the actual optimal focusing value of the mask patterns on the plurality of masks relative to the theoretical optimal focusing value is reduced, and the optical imaging consistency of the plurality of masks in the same mask group is improved.

The invention provides a method for keeping the consistency of an auxiliary pattern when the auxiliary pattern is added and a hole layer pattern, and belongs to the field of semiconductors. The method for keeping the consistency of the auxiliary pattern during the addition of the auxiliary pattern comprises the following steps: providing a hole layer pattern; the first auxiliary pattern extends in the first direction, the second auxiliary pattern extends in the second direction, if the extended first auxiliary pattern and the extended second auxiliary pattern are overlapped, a virtual area is formed on the diagonal line of the first hole pattern and the second hole pattern, and the first direction and the second direction are perpendicular to each other; based on the length of the center line of the virtual area, the auxiliary graph parallel to the long center line is reserved. According to the method, the auxiliary pattern parallel to the long center line is reserved based on the length of the center line of the virtual area, so that the added auxiliary pattern can be kept consistent even if the pattern of the hole layer pattern rotates, and the influence on OPC (Optical Proximity Correction) is avoided.

The embodiment of the utility model provides an objective lens damping device which comprises an objective lens damper, a flexible hinge structure is adopted in the objective lens damper, and the flexible hinge structure provides elastic support when external vibration or temperature changes so as to buffer vibration transmission and reduce stress caused by a thermal expansion effect; the upper layer of the objective lens damper is an objective lens contact end; the lower layer is a frame contact end and is provided with an interface connected with a frame; the middle layer is of a flexible hinge structure, necessary flexible supporting is provided, and therefore vibration isolation and thermal stress buffering are achieved. According to the utility model, the objective lens damper is arranged between the objective lens and the frame, so that the objective lens and the frame are flexibly connected through the scalability of the flexible hinge instead of being rigidly connected through a screw, a better protection effect on the objective lens is achieved, and the designed objective lens damper belongs to passive vibration reduction, so that the service life of the objective lens damper is prolonged. Only through mechanical design, the vibration isolator is easy to achieve, and vibration isolation and thermal decoupling are well achieved.

The invention relates to a conduit assembly (70, 90) for a fluid line (39, 42, 43) for a system (1, 101) for semiconductor technology, comprising at least one damping element (72.1, 72.2, 92) for damping acoustic vibrations in the fluid (79), wherein the conduit assembly (70, 90) has a compressible primary volume (77.1, 77.2, 97) into which the damping element (72.1, 72.2, 92) moves at least partially upon deformation. The conduit assembly (70, 90) is characterized in that it has a compressible secondary volume (78.1, 78.2, 98) which is formed as a part of the primary volume (77.1, 77.2, 97). The invention further relates to a system (1,101) for semiconductor technology with a conductor assembly (70,90) according to one of the embodiments described.

The invention relates to a thermalization plate (30) for a system (1,101) of semiconductor technology with at least two thermalization plate elements (40,41,50,51,52), wherein the thermalization plate (30) is characterized in that at least one thermalization plate element (40,41) is manufactured using an additive manufacturing process. Furthermore, the invention relates to a system (1,101) for semiconductor technology, in particular a projection exposure system (1,101). Furthermore, the invention relates to a method for manufacturing a thermalization plate (30) for a semiconductor technology system (1,101), with at least two interconnected thermalization plate elements (40,41,50,51,52), wherein at least one thermalization plate element (40,41) is manufactured using an additive manufacturing process and comprises the following process steps: - Production of at least one thermalization sheet element (40,41) using an additive manufacturing process. - Joining of the thermalization sheet elements (40,41,50,51,52) by laser welding.

The invention provides a method for correcting the layout of a photomask, and is applied to the technical field of semiconductors. According to the method and the device, a plurality of pixel graphs of which the interval lengths do not meet a preset range are screened out based on the interval lengths between adjacent pixel graphs, and then the key sizes of the screened pixel graphs are multiplied by N times according to different proportions, so that a plurality of first test photomasks are constructed; and then determining the optimal magnification ratio of the initial photomask based on the combination of the wafer data, the incremental limit suboptimal solution and the two-side clamping theorem, namely obtaining the target photomask, so that the unexpected effects are that the optimal magnification ratio of each pixel graph in the initial photomask can be rapidly determined only by using a small part of pixel graphs in the initial photomask, and the target photomask is obtained. The manufacturing efficiency and quality of the photomask and the space utilization rate of the photomask and the wafer are improved, and the manufacturing cost of the photomask is reduced.