Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

31114results about "Photomechanical exposure apparatus" patented technology

Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells

In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is foamed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and / or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.
Owner:ASML NETHERLANDS BV

Ultraviolet laser apparatus and exposure apparatus using same

An ultraviolet laser apparatus having a single-wavelength oscillating laser generating laser light between an infrared band and a visible band, an optical amplifier for amplifying the laser light, and a wavelength converting portion converting the amplified laser light into ultraviolet light using a non-linear optical crystal. An exposure apparatus transfers a pattern image of a mask onto a substrate and includes a light source having a laser apparatus emitting laser light having a single wavelength, a first fiber optical amplifier for amplifying the laser light, a light dividing device for dividing or branching the amplified laser light into plural lights, and second fiber optical amplifiers for amplifying the plural divided or branched lights, respectively, and a transmission optical system for transmitting the laser light emitted from the light source to the exposure apparatus.
Owner:NIKON CORP

Lithographic apparatus and device manufacturing method

In a lithographic apparatus, a localized area of the substrate surface under a projection system is immersed in liquid. The height of a liquid supply system above the surface of the substrate can be varied using actuators. A control system uses feedforward or feedback control with input of the surface height of the substrate to maintain the liquid supply system at a predetermined height above the surface of the substrate.
Owner:ASML NETHERLANDS BV

Projection optical system and exposure apparatus having the projection optical system

A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.
Owner:NIKON CORP

Lithographic apparatus and device manufacturing method

A lithographic projection apparatus wherein a liquid supply system provides a space between a projection system and a substrate with liquid. The liquid supply system comprises a member. A liquid seal is formed between the member and the substrate by a flow of liquid. In an embodiment, the liquid seal is formed by a flow of liquid from an inlet to an outlet of the member.
Owner:ASML NETHERLANDS BV

Projection exposure method and projection exposure system

In a method for manufacturing semiconductor devices and other finely structured parts, a projection objective (5) is used in order to project the image of a pattern arranged in the object plane of the projection objective onto a photosensitive substrate which is arranged in the region of the image plane (12) of the projection objective. In this case, there is set between an exit surface (15), assigned to the projection objective, for exposing light and an incoupling surface (11), assigned to the substrate, for exposing light a small finite working distance (16) which is at least temporarily smaller in size and exposure time interval than a maximum extent of an optical near field of the light emerging from the exit surface. As a result, projection objectives with very high numerical apertures in the region of NA>0.8 or more can be rendered useful for contactless projection lithography.
Owner:CARL ZEISS SMT GMBH

Catadioptric projection objective with geometric beam splitting

A catadioptric projection objective is used to project a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the formation of at least one real intermediate image and has an image-side numerical aperture NA>0.7. The projection objective comprises an optical axis and at least one catadioptric objective part that comprises a concave mirror and a first folding mirror. There are a first beam section running from the object plane to the concave mirror and a second beam section running from the concave mirror to the image plane. The first folding mirror is arranged with reference to the concave mirror in such a way that one of the beam sections is folded at the first folding mirror and the other beam section passes the first folding mirror without vignetting, the first beam section and the second beam section crossing one another in a cross-over region.
Owner:CARL ZEISS SMT GMBH

Lithography apparatus for manufacture of integrated circuits

An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 having a thickness of less than about 5000 angstroms, wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 with a thickness of less than about 5000 angstroms, comprising introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer, and directing light preferably with a wavelength of less than about 450 nm through the immersion fluid and onto the photoresist.
Owner:TAIWAN SEMICON MFG CO LTD

Method and device for immersion lithography

The present invention relates to an immersion lithographic system for patterning a work piece arranged at an image plane and covered at least partly with a layer sensitive to electromagnetic radiation. Said system comprising a source emitting electromagnetic radiation onto an object plane, a mask, adapted to receive and modulate said electromagnetic radiation at said object plane and to relay said electromagnetic radiation toward said work piece, and an immersion medium contacting at least a portion of a final lens of said lithographic system and a portion of said work piece, wherein an area of said contacting is restricted by capillary forces. The invention further relates to a method for patterning a workpiece.
Owner:MICRONIC LASER SYST AB

Stage device and exposure apparatus

A stage device suitable for exposure apparatus used to produce semiconductor devices, is movable in an area wider than the measurement area of interferometer for position measurement, and is capable of measuring the position with high precision. When a movable stage moves from the position where the laser beams from laser interferometers are not applied into the measurement area of the laser interferometer, the position of reference mark is measured by a wafer alignment sensor, and the measurement value measured by the laser interferometer is corrected based on the results of the measurement by the wafer alignment sensor. When another movable stage enters the measurement area of the laser interferometer, the position of the reference mark is similarly measured by a wafer alignment sensor, and the measurement value measured by the laser interferometer is corrected based on the results of the measurement by the wafer alignment sensor.
Owner:NIKON CORP

Liquid immersion type exposure apparatus

Disclosed is a liquid immersion type exposure apparatus which is applicable not only to a liquid immersion exposure apparatus of the type that an exposure substrate as a whole is immersed in a liquid vessel but also to a liquid immersion exposure apparatus of the type that a liquid medium is held in a portion between the exposure substrate and a termination end portion of a projection optical system, and by which production of bubbles can be reduced without interference with exposure. In one preferred from, a degassing system for removing a gas dissolved in the liquid is provided in a liquid medium supplying path and / or a liquid medium collecting path, by which production of bubbles is reduced sufficiently.
Owner:CANON KK

Refractive projection objective for immersion lithography

A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT / L≦0.4 holds for a distance ratio AT / L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.
Owner:CARL ZEISS SMT GMBH

Moving lens for immersion optical lithography

An apparatus for immersion optical lithography having a lens capable of relative movement in synchrony with a horizontal motion of a semiconductor wafer in a liquid environment where the synchronous motion of the lens apparatus and semiconductor wafer advantageously reduces the turbulence and air bubbles associated with a liquid environment. The relative motions of the lens and semiconductor wafer are substantially the same as the scanning process occurs resulting in optimal image resolution with minimal air bubbles, turbulence, and disruption of the liquid environment.
Owner:IBM CORP

Liquid immersion type exposure apparatus

Disclosed is a liquid immersion type exposure apparatus specifically arranged to maintain a liquid film between an exposure substrate and a terminal end portion of a projection optical system. In one preferred form, the liquid immersion type exposure apparatus includes a projection optical system for projecting a pattern of a mask onto a substrate, a liquid film forming system for forming a liquid film in a predetermined region between the projection optical system and the substrate, and a sensor for detecting disappearance of at least a portion of the liquid film in the predetermined region.
Owner:CANON KK

Liquid-filled balloons for immersion lithography

A liquid-filled balloon may be positioned between a workpiece, such as a semiconductor structure covered with a photoresist, and a lithography light source. The balloon includes a thin membrane that exhibits good optical and physical properties. Liquid contained in the balloon also exhibits good optical properties, including a refractive index higher than that of air. Light from the lithography light source passes through a mask, through a top layer of the balloon membrane, through the contained liquid, through a bottom layer of the balloon membrane, and onto the workpiece where it alters portions of the photoresist. As the liquid has a low absorption and a higher refractive index than air, the liquid-filled balloon system enhances resolution. Thus, the balloon provides optical benefits of liquid immersion without the complications of maintaining a liquid between (and in contact with) a lithographic light source mechanism and workpiece.
Owner:TWITTER INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products