620results about "Laser arrangements" patented technology

The invention discloses a semiconductor laser, which comprises a laser light source; the polarizer comprises an incident side, a first reflection light-emitting side, a second reflection light-emitting side and a transmission light-emitting side; the first wave plate is arranged on the first reflection light emitting side; the second wave plate is arranged on the transmission light-emitting side; during working, laser emitted by the laser light source comprises first polarized light and second polarized light, the polarization directions of the first polarized light and the second polarized light are perpendicular to each other, and the laser enters the polarizer from the incidence side; the first polarized light is reflected by the polarizer, passes through the first wave plate to be subjected to polarization turning and is emitted along a first emergent light path, and part of light reflected back along the first emergent light path on the working surface passes through the first wave plate to be subjected to polarization turning again and passes through the polarizer to be emitted from a second reflection emergent light side; the second polarized light passes through the polarizer and the second wave plate to be subjected to polarization turning and is emitted out along a second emergent light path, and part of light reflected back along the second emergent light path on the working surface is subjected to polarization turning through the second wave plate again, then enters the polarizer and is reflected out from the second reflection emergent light side.

The invention discloses a wavelength thermal tuning photon integrated device and a preparation method thereof.The device comprises a substrate, a modulator layer, a front sampling grating layer, a gain layer, a rear sampling grating layer, a cover layer and an electric contact layer, the cover layer and the electric contact layer jointly form a shallow ridge waveguide structure, and the shallow ridge waveguide structure is transversely arranged in the center of the upper portion of each functional layer; the whole cover layer and the electric contact layer are etched according to a preset ridge-shaped strip pattern, a cantilever beam structure is transversely arranged in the post-sampling grating layer, the cantilever beam structure comprises a cantilever beam and air grooves in the two sides of the cantilever beam, and the cantilever beam is located under the shallow ridge waveguide structure; the cantilever beam structure is formed by etching the rear sampling grating layer below the shallow ridge waveguide structure according to a preset cantilever strip pattern; according to the technical scheme, wavelength thermal tuning is achieved through collaborative design of the shallow ridge waveguide structure and the cantilever beam grating structure, limitation of material carrier concentration is avoided, thermal response is fast, and power consumption is remarkably reduced.

Configurations are disclosed for multi-wavelength optical devices and systems. In particular, multi-wavelength optical devices that include separate chips optically connected via phonic wire bonds. The disclosed configurations can utilize photonic wire bond interconnects and photonic wire bond interconnection techniques, which may facilitate low-cost implementation of wavelength division multiplexed optical systems.

Implementations described herein are related to a diode driver that recirculates residual current from an operating current pulse in an inductor. Such recirculation produces a diagnostic current pulse to a diode array for measuring a voltage drop across a portion of the array. For example, after a controller charges an inductor of a diode driver to deliver operating current pulses to a portion of a diode array for illumination, the controller causes a residual current to remain and recirculate in the inductor. In some implementations, in response to the recirculating current reaching a monitoring threshold, the controller delivers a monitoring pulse to the portion of the diode array to measure a voltage drop across the portion of the diode array. In some implementations, the controller may infer defectivity in the portion of the array from such voltage drop measurements over time.

The invention discloses a beat frequency comparison device mediated by an optical frequency comb. The beat frequency comparison device comprises the optical frequency comb, a first frequency stabilized laser, a first beat frequency device, a first frequency mixer, a first high-pass filter, a second frequency stabilized laser, a second beat frequency device, a second frequency mixer, a second high-pass filter, a DDS signal generator, a third frequency mixer and a low-pass filter. Frequency-stabilized lasers output by the first frequency-stabilized laser and the second frequency-stabilized laser and an optical frequency comb output by the optical frequency comb are subjected to beat frequency in the first beat frequency device and the second beat frequency device respectively, and first beat frequency and second beat frequency are obtained; the first beat frequency and the second beat frequency are mixed with the carrier envelope offset frequency of the optical frequency comb, and a first sum frequency and a second sum frequency are filtered out; the first sum frequency obtains a synthetic frequency through direct digital frequency synthesis; the second sum frequency and the synthetic frequency are mixed in the third mixer, and then the difference frequency is filtered out through the low-pass filter. According to the invention, beat frequency comparison of frequency-stabilized lasers with different wavelengths can be realized, and the influence of the stability of the optical frequency comb is avoided.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

A spectral linewidth adjusting method includes: adjusting a timing of a first trigger signal for amplifying and converting a portion of a first pulse laser beam to a second pulse laser beam and / or a timing of a second trigger signal for amplifying and converting a portion of second continuous light to a third pulse laser beam and adjusting a spectrum of a fourth pulse laser beam obtained by performing sum-frequency mixing of the second and third pulse laser beams to a first spectrum in a non-Gaussian shape; and modulating a wavelength of the second continuous light within time corresponding to one pulse of the third pulse laser beam and adjusting the spectrum of the fourth pulse laser beam to a second spectrum having a spectral linewidth wider than the first spectrum through generation of a modulation signal for supplying the modulation signal to an optical phase modulator.

The invention provides an on-chip integrated laser light source and an optical coupling integration method thereof.The on-chip integrated laser light source comprises a silicon optical substrate and a light source chip assembly integrated on the silicon optical substrate, and the silicon optical substrate comprises an optical signal transmission waveguide; the light source chip assembly comprises a surface-emitting distributed feedback laser chip so as to generate laser beams emitted in the direction perpendicular to the surface of the chip. The on-chip integrated laser light source further comprises a grating coupling structure arranged between the surface emission distributed feedback laser chip and the optical signal transmission waveguide. The light-emitting surface of the surface-emitting distributed feedback laser chip is arranged towards the silicon light substrate, and a laser beam generated by the surface-emitting distributed feedback laser chip is directly projected and coupled into the light signal transmission waveguide through the grating coupling structure; the surface-emitting distributed feedback laser chip is fixedly combined on the silicon optical substrate through a flip chip technology, so that the high-precision end face alignment requirement of the heterogeneous integrated waveguide is converted into high-efficiency grating coupling based on a surface light emitting mode. In this way, harsh end face coupling is converted into efficient grating coupling.

The invention relates to a laser package comprising a base element having a mounting surface on which at least one semiconductor laser element is arranged to emit light along a first optical axis that runs substantially parallel to the mounting surface. The laser package also comprises an integrally formed deflecting element arranged in the beam path of the at least one semiconductor laser element on the mounting surface and configured to couple the light emitted along the first optical axis and coupled in via a light entry surface of the deflecting element to a second optical axis via a light exit surface of the deflecting element, which is offset substantially parallel to the first optical axis.Furthermore, the laser package comprises an optical arrangement which is arranged downstream of the deflecting element in the beam path of the at least one semiconductor laser element on the arrangement surface. The optical arrangement is configured to collimate light emitted by the at least one semiconductor laser element along at least one direction and / or is configured to homogenize light emitted by the at least one semiconductor laser element along at least one direction.

Provided is a pulse width expansion device for expanding the pulse width of a pulsed laser beam, the pulse width expansion device including a first optical pulse stretcher, a second optical pulse stretcher, a third optical pulse stretcher, and a fourth optical pulse stretcher disposed on the optical path of the pulsed laser beam, the first optical pulse stretcher, the second optical pulse stretcher, the third optical pulse stretcher, and the fourth optical pulse stretcher being disposed on the optical path of the pulsed laser beam. The optical path length of the delay optical path of the first optical pulse stretcher is L1, the optical path length of the delay optical path of the second optical pulse stretcher is L2, the optical path length of the delay optical path of the third optical pulse stretcher is L3, and the optical path length of the delay optical path of the fourth optical pulse stretcher is L4. When n is an integer of 2 or more, L2 is an integer multiple of 2 or more of L1, L3 satisfies (n-0. 75) * L1 < = L3 < = (n-0.25) * L1, and L4 satisfies (n-0.25) * L1 < = L4 < = (n + 0.25) * L1.

In an LD-pumped solid-state laser, where a solid-state laser crystal is excited by excitation light emitted from an LD to cause laser oscillation, and the resulting laser oscillation light of two frequencies is converted into a sum frequency, stable operation and cost reduction are achieved. [Solution] In an LD-pumped solid laser 1 comprising a solid laser crystal 19, an LD 11 that emits excitation light to excite the solid laser crystal 19, a resonator that resonates the light emitted from the solid laser crystal 19, and an optical wavelength conversion element 22 that converts the wavelength of solid laser oscillation light L21 and L22, a multiplexing means 21 is provided that receives the two solid laser oscillation light L21 and L22 from different directions and combines them into one, and the optical wavelength conversion element 22 converts the combined solid laser oscillation light L21 and L22 into a sum frequency.

The application discloses an independently replaceable space beam combining semiconductor laser array, which is used for solving the problems of high maintenance cost, high power loss and low space beam combining efficiency of a traditional semiconductor laser bar. The application comprises a carrier, N semiconductor lasers and N sets of beam shaping components which are arranged side by side and independently installed on the carrier. Each semiconductor laser comprises a positive electrode sheet, a semiconductor laser bar, a negative electrode sheet and an insulating pressing sheet which are connected in sequence from bottom to top. The positive electrode sheet is connected in series with the negative electrode sheet in the adjacent semiconductor laser. The light emitting end of each semiconductor laser bar is directed to the corresponding beam shaping component. The connecting end of each positive electrode sheet and negative electrode sheet is located at the back light end of the corresponding semiconductor laser bar. Each set of beam shaping components comprises a fast-axis collimator, a slow-axis collimator and a light path turning piece which are arranged in sequence along the light path. All the light path turning pieces are arranged in parallel, so that the space beam combining of the outgoing light of the semiconductor laser bar in the fast-axis direction is realized.

Task: To provide a technique that can reduce the volume of a moisture-proof space that seals a light source module in a moisture-proof manner. Solution: A light source module 100 comprises a first laser 117 for emitting red light, a second laser 118 for emitting green light, a third laser 119 for emitting blue light, an electronic cooling module 530 for adjusting the temperature of the first laser 117, a first housing 410 in which the first laser 117 is housed, and a second housing 420 in which the second laser 118 and the third laser 119 are housed.

A wavelength beam combining device includes: a plurality of laser light sources configured to emit a plurality of laser beams in a first direction and having mutually different peak wavelengths and central axes arranged in a second direction intersecting the first direction; a first diffraction grating disposed at a position where the plurality of laser beams are received, the first diffraction grating being configured to diffract the plurality of laser beams in different directions according to wavelengths of the laser beams to cause the diffracted laser beams to enter the second diffraction grating; a second diffraction grating configured to diffract the plurality of laser beams diffracted by the first diffraction grating to form a wavelength-combined beam, and to direct the wavelength-combined beam in the first direction; and an optical coupling unit configured to couple the wavelength-combined beam to an optical transmission fiber and to be movable in the second direction.

The invention relates to a method for producing at least one semiconductor laser. The method comprises: providing a semiconductor layer sequence having at least one ridge waveguide and a widened region, wherein the main direction of extension of the widened region runs transversely or perpendicularly with respect to the main direction of extension of the ridge waveguide; and forming at least one main structure of the semiconductor laser from the widened region, wherein the main structure is connected to the ridge waveguide and comprises a decoupling facet of the semiconductor laser. The main structure is stepped and / or at least one auxiliary structure is formed from the widened region, which auxiliary structure is laterally spaced from the main structure. The invention also relates to a semiconductor laser.

A laser device includes an oscillator outputting pulse laser light; an amplifier amplifying the pulse laser light; an optical pulse stretcher extending a pulse width of the pulse laser light; a beam divergence angle adjuster including an upstream lens arranged on an optical path of the pulse laser light, a downstream lens arranged downstream of the upstream lens, and an optical path length changing mechanism for changing an inter-lens optical path length between the upstream lens and the downstream lens; and a processor controlling the beam divergence angle adjuster and obtaining a repetition frequency or a duty of the pulse laser light, and to change, when the repetition frequency or the duty changes by a preset threshold or more, the inter-lens optical path length so that the beam divergence angle of the extended pulse laser light becomes small in accordance with the repetition frequency or the duty after the change.

A semiconductor light-emitting structure includes a semiconductor substrate layer, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, and a second limiting layer stacked in sequence. The active layer comprises a first superlattice active layer and a second superlattice active layer stacked in sequence, and the second superlattice active layer is located on a side of the first superlattice active layer away from the first waveguide layer. The semiconductor light-emitting structure further includes an insertion layer disposed between the second superlattice active layer and the first superlattice active layer. A refractive index of the insertion layer is less than an effective refractive index of the first superlattice active layer and less than an effective refractive index of the second superlattice active layer.

The invention relates to the technical field of high-power design in gas lasers, in particular to a folded tube which comprises a plurality of laser tubes which are arranged side by side and connected in series through U-shaped elbows. The number of the laser tubes is at least three, each laser tube makes contact with the side walls of at least two laser tubes, and every two adjacent laser tubes making contact with each other are fixedly connected. The natural stability of the triangle is utilized, the torsion resistance of the single laser tube and the overall rigidity of the folding tube are improved, and the transportation stability and the vibration resistance are remarkably improved.

The utility model provides a multiband laser chip integrated laser, which comprises a packaging shell, the packaging shell comprises a packaging base and a packaging cap, the packaging base is provided with a plurality of laser chips, the packaging shell is provided with a laser beam processing assembly, and the packaging cap is provided with a plurality of laser chips. Output light beams with different wavelengths emitted by the plurality of laser chips are output outwards after passing through the laser beam processing assembly; the packaging base is further provided with a temperature sensor, a heat sink and a temperature control module, the heat sink is arranged between the temperature control module and the laser chip, and one laser chip correspondingly adopts one temperature sensor, one heat sink and one temperature control module. In the packaging shell of the utility model, each laser chip is correspondingly provided with one temperature sensor, one heat sink and one temperature control module, thereby preventing mutual influence when the temperature control modules carry out temperature regulation and control on the laser chips.

A light source apparatus and an electrode design for use in a discharge chamber of the light source apparatus are provided. The discharge chamber is configured to hold a gas discharge medium configured to output a light beam. The light source apparatus includes a pair of opposing electrodes configured to excite the gas medium to form a discharge plasma. At least one electrode of the pair of opposing electrodes can include a recessed portion or a hollow portion at each end of the electrode or at other suitable locations. The disclosed electrode structure improves the uniformity of the erosion profile of the electrode as the local discharge particle flux is reduced at the recessed portion, significantly extending the lifetime of the discharge chamber by redistributing the discharge particle flux through the electrode with an optimized design of the electrode geometry.

An autocorrelator and a pulse amplifying device including the same are provided. The autocorrelator includes a parabolic mirror configured to transmit and reflect pulse laser beam, a prism on one side of the parabolic mirror and configured to split the pulse laser beam, a first lower retro-reflector under the prism and provided at a first distance from the prism to reflect a portion of the pulse laser beam, a first upper retro-reflector on the prism, provided at a second distance different from the first distance from the prism, and configured to reflect another portion of the pulse laser beam to generate a first time difference between pulses of the pulse laser beam upper retro-reflector, and a first sensor under the parabolic mirror and configured to receive the pulse laser beam to detect a pulse width of the pulse laser beam.

This utility model discloses a split-type laser and a laser output structure, including: a first laser generating structure, comprising a first pump source and a first doped fiber, wherein the first pump source is used to pump the first doped fiber to generate a first laser; a second laser generating structure, comprising a second pump source and a second doped fiber, wherein the second pump source is used to pump the second doped fiber to generate a second laser; and a laser output structure, wherein the laser output structure has a first output channel and a second output channel, the laser output structure being located on the propagation paths of the first laser and the second laser, and the laser output structure being capable of adjusting the ratio of the first laser and the second laser output by the first output channel and the second output channel. Both the first laser generating structure and the second laser generating structure have their own pump sources, making it easier for users to select the light source emitted by the laser.

Apparatuses, methods, and systems for a modulated laser are disclosed. The modulated laser includes a substrate including a plurality of laser segments, a first laser segment comprising a DC electrode, a second laser segment comprising an AC electrode, an isolation barrier formed between the first laser segment and the second laser segment, and a modulated laser cavity spanning from a rear face to a front face of the modulated laser inclusive of the plurality of laser segments, wherein a primary injection current supporting stimulated emission at a desired optical output power out of the front face of the modulated laser is generated when a DC bias is applied to the DC electrode, and wherein a carrier signal of the modulated laser is modulated when an AC signal is applied to the AC electrode, wherein the AC bias is independent of the DC bias.

The utility model discloses an automatic monitoring quick release type high-power beam combining laser, which comprises monochromatic lasers, each monochromatic laser is mounted through a channel assembly part, and a quick release type structure is arranged between a mounting base of each monochromatic laser and the channel assembly part; the quick-release structure comprises a first magnetic attraction assembly, a second magnetic attraction assembly and a switch assembly. The first magnetic attraction assembly is arranged on the installation base, the second magnetic attraction assembly is arranged on the channel installation face of the channel assembly part and controlled by the switch assembly, and the relative positions of the first magnetic attraction assembly and the second magnetic attraction assembly are switched between the first position and the second position. In the first position, magnetic attraction force for fixedly connecting the monochromatic laser to the channel assembly part is provided between the first magnetic attraction assembly and the second magnetic attraction assembly, in the second position, the magnetic attraction force between the first magnetic attraction assembly and the second magnetic attraction assembly is reduced, and the monochromatic laser is separated from the channel assembly part. According to the utility model, a user can flexibly disassemble, assemble and replace the monochromatic laser according to the actual requirements of different wavelengths.

In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.

An end-emitting laser (EEL) system and a method for manufacturing the same are disclosed. The EEL system comprises an EEL structure configured to generate laser radiation along a first longitudinal axis defined by the active layer of the EEL system. Furthermore, the EEL system comprises a photonic crystal structure. The photonic crystal structure is defined by a two-dimensional periodic array distributed within the array plane and is arranged to couple the generated laser radiation laterally across the EEL system. The presence of the photonic crystal structure within the EEL system causes light to be scattered within the photonic crystal in a direction perpendicular to the output field generated by the EEL system. The described EEL system makes it possible to increase the area of ​​the EEL system while maintaining single spatial and longitudinal mode operation, thereby obtaining a high-power coherent beam.

Reduces color unevenness in the light emitted from the light source device. [Solution] The light source device comprises a first semiconductor laser element for red light, a second semiconductor laser element for green light, a third semiconductor laser element for blue light, a planar optical wave circuit that optically couples with the first, second, and third semiconductor laser elements and emits red, green, and blue laser light from the same port, a lens positioned on the optical axis of the planar optical wave circuit and collimating the red, green, and blue laser light, and a translucent member positioned on the optical axis of the planar optical wave circuit and having a second light incident surface into which the red, green, and blue laser light emitted from the lens is incident, wherein the diffusion angle of the red laser light is greater than the diffusion angle of the green laser light and the diffusion angle of the blue laser light, and the second light incident surface has a first diffraction grating in a region where a portion of the red laser light overlaps and in a region where the green and blue laser light do not overlap, the pitch of which decreases as it moves from the center of the red laser light outward in at least one of the short axis and long axis directions of the red laser light.

In accordance with at least one aspect of this disclosure, a method for seeding an optical beam (106) includes, emitting an optical beam (106) from an energy source towards an optical amplifier along an optical axis, and rotating one or more optical elements disposed with in the beam path of the optical beam (106) between the energy source and the optical amplifier about the optical axis to a align the optical beam with a reference beam.