2595results about "Laser arrangements" patented technology

The invention belongs to the related technical field of lasers, and provides a high-power subnanosecond-nanosecond laser in order to solve the problems that the range adjustment and the application range of an existing laser are limited, and the structural stability needs to be improved. A modulation semiconductor seed source, an optical fiber pre-amplifier, a light beam isolation system, a high repetition frequency solid pre-amplifier, an acousto-optic modulator frequency reduction module and a multi-stage solid single-pass main amplifier are sequentially arranged along an optical path, continuous adjustable output of repetition frequency and pulse width is achieved, the adjustable range of the repetition frequency is 100 kHz to 1 MHz, the adjustable range of the pulse width is 100 ps to 10 ns, and the adjustable range of the pulse width is 100 ps to 10 ns. The laser power and the light beam quality are remarkably improved, and the method is suitable for the fields of high-precision micromachining, nonlinear optical research, medical cosmetology and the like.

The invention discloses a monolithic integrated light emitting chip and a manufacturing method thereof, and relates to the technical field of semiconductor devices.The chip comprises a substrate, a passive waveguide layer, a first laser layer, a second laser layer, a modulator layer, a wrapping layer and a contact layer, the passive waveguide layer is formed by etching according to a preset pattern, and the first laser layer is formed on the substrate; comprising two input branches and an output branch, a first laser layer is arranged on one of the input branches, a second laser layer and a modulator layer are arranged on the other optical signal input branch, paths of the two input branches are coupled into a path of the output branch, gratings are arranged on the two laser layers, and the modulator layer is arranged on the output branch. A cladding and a contact layer are disposed over the functional layers. The two different laser layers are integrated in the chip, and the optical signals emitted by the different laser layers are combined and output through the passive waveguide layer with the predetermined pattern, so that the cost of the optical emission module is effectively reduced, the power consumption is reduced, and the product reliability is improved.

The invention discloses an extensible multi-path beam combination laser assembly and a laser, and relates to the technical field of laser beam combination. The extensible multi-path beam combining laser assembly comprises a half-wave plate, a reflecting element, a polaroid, a Q switch, a controller and 2n basic lasers. The basic laser can output initial pulse laser with the polarization direction being the first direction, every two of the 2n initial pulse laser beams can be combined into 2n-1 pulse laser beams, and every two of the 2n-1 pulse laser beams can be combined into 2n-2 pulse laser beams until the 2n pulse laser beams are combined into one beam of output pulse laser. When the Q switch is turned on, the polarization direction of the pulse laser penetrating through the Q switch can be deflected by 90 degrees. When the pulse laser beams are combined, the first pulse laser beam passes through a Q switch and a reflecting element which are arranged along the light path of the first pulse laser beam, the polarization direction is the first direction or the second direction, and the first pulse laser beam is reflected to a polaroid arranged along the light path of the second pulse laser beam to be combined. Therefore, beam combination of multiple paths of laser is achieved, and even if light path faults exist, the multiple paths of laser after beam combination can be output.

The utility model provides a multi-single-tube semiconductor laser diode densely-arranged beam shaping and coupling device, comprising a semiconductor array laser used for emitting a first beam array and carrying out fast and slow axis collimation to obtain a second beam array; the light beam reflection separation system is used for performing separation arrangement on the second light beam array; the fast and slow axis conversion system is arranged on a light path where the light beam is emitted by the light beam reflection separation system and used for rotating the fast and slow axis of the second light beam array which is separated and arranged by 90 degrees; the confocal beam shrinking and expanding system is used for simultaneously focusing the fast axis light spots and the slow axis light spots of the separated and arranged second light beam array and then carrying out fast axis beam shrinking and slow axis beam expanding to obtain a third light beam array; the light beam reflecting and combining system is arranged on the light beam emergent light path of the confocal beam shrinking and expanding system and is used for closely arranging the third light beam array; and the focusing system is arranged on a light path where the light beams are emitted by the light beam reflecting and combining system, and is used for focusing the light spots of the closely arranged third light beam array to a target size.

An optical emission array includes an optical input portion configured to provide a parent laser source for the optical emission array, and an optical output portion including a plurality of child laser emitters. Each child laser emitter of the plurality of child laser emitters is injection-locked to the parent laser source. The optical emission array further includes at least two optical distribution branches (i) disposed between the optical input portion and the optical output portion, and (ii) optically connecting at least two child laser emitters of the plurality of child laser emitters, respectively, to the parent laser source.

The embodiment of the invention provides a light-emitting device and laser equipment, and relates to the technical field of laser. The light emitting device includes: a mounting substrate including a connection pattern, connection pads, and an in-board interconnection region, the connection pads being electrically connected through the in-board interconnection region and the connection pattern; the light-emitting unit comprises a packaging tube shell and a laser chip arranged in the packaging tube shell; the light-emitting units are fixed on the connecting patterns of the mounting substrate, and the laser chips of each color are electrically connected with the two corresponding connecting bonding pads through the side wall wires, the conductive structures, the conductive areas and the in-board interconnection areas, so that independent power supply of the laser chips of different colors is realized. The problem that the using number of the laser chips is limited by the driving circuit is solved, the number of the driving circuit is not increased while the number of the laser chips is increased, the working efficiency of the driving circuit is effectively improved, and the cost is reduced.

To provide an optical unit which is used inside of a laser oscillator of an external resonance type and capable of suppressing an output loss during external oscillation.SOLUTION: An optical unit 60 comprises a FAC lens array 63 and a beam twister array 64. A second surface 63b of the FAC lens array 63 includes a curvature part. A first surface 63a of the FAC lens array 63 and third and fourth surfaces 64a and 64b of the beam twister array 64 are flat surfaces. A first antireflection layer AR1 of a first reflection factor is provided on the flat surface, and a second antireflection layer AR2 of a second reflection factor is provided on the second surface 63b. The first and second reflection factors are lower than a predetermined reflection factor, and the second reflection factor is higher than the first reflection factor. A fluctuation rate of the reflection factor with respect to film thickness fluctuation of the second antireflection layer AR2 is smaller than that of the first antireflection layer AR1.SELECTED DRAWING: Figure 7B

A 2-micron large-energy solid two-way amplifier based on a single-frequency pulse optical fiber preceding stage can make full use of the small signal amplification capacity of optical fiber laser and the energy extraction capacity of solid laser, and meanwhile the problem that energy is difficult to improve due to the stimulated Brillouin scattering effect in an optical fiber is solved. And high-stability, high-repetition-frequency and large-energy single-frequency pulse laser output can be realized. The all-fiber cascade amplifier comprises an all-fiber cascade amplifier and a solid two-way amplifier, according to the all-fiber cascade amplifier, a continuous narrow-linewidth fiber laser is adopted as a seed source, continuous light is modulated into pulse light through an acousto-optic modulator, and the waveform, the pulse width and the repetition frequency of output pulse laser are adjusted; the modulated pulse light adopts a main oscillation power amplification structure and is preliminarily amplified by a polarization maintaining optical fiber amplifier; the solid-state amplifier adopts a two-way amplification structure, and further high-efficiency amplification is realized through solid-state two-way amplification. The whole laser system is compact in structure, stable, adjustable in parameter and capable of meeting application requirements of different scenes.

The invention provides an all-solid-state high-power single-frequency laser based on an optical fiber-slab mixed structure, and relates to the technical field of solid lasers, and the all-solid-state high-power single-frequency laser comprises an all-solid-state continuous single-frequency seed module, an optical fiber pulse modulation module, an optical fiber pre-amplification module, a slab laser pre-amplification module, a slab laser main amplification module and a frequency multiplication module which are sequentially arranged; the lath laser pre-amplifier and the lath laser main amplifier are used for compensating thermally induced aberration generated by lath laser through multi-pass amplification designed according to the spherical aberration self-compensation principle, and then the quality of light beams is improved. In addition, a discrete mirror group is adopted to replace a complete amplifier cavity mirror, spontaneous radiation and parasitic oscillation in the working process of the amplifier are effectively restrained, nearly hundred mJ-magnitude single-frequency pulse laser with excellent light beam quality can be obtained, and application to laser radar detection or industry can be met.

Integrated laser arrays, photonic devices, packages, and systems are disclosed. An example integrated laser array includes a first laser and a second laser, each laser including a light emitter structure and a waveguide having a grating. In one aspect, the effective pitch of the gratings of the first and second lasers differs by less than about 5 angstroms, while the gratings of the first and second lasers are fabricated at a resolution of at least 1 nm. In another aspect, each laser includes a waveguide having a left sidewall grating and a right sidewall grating, the effective widths of the waveguides of the first and second lasers are different, and an offset between the left sidewall grating and the right sidewall grating of the second laser is different than an offset between the left sidewall grating and the right sidewall grating of the first laser. The integrated laser arrays described herein may be particularly suited for implementation in dense wavelength division multiplexing systems.

The invention relates to the technical field of semiconductor lasers, and particularly provides an addressable semiconductor laser array, which comprises M # imgabs0 # N laser units, a plurality of anodes and a plurality of cathodes, the M # imgabs1 # N laser units are arranged in an array mode according to M # imgabs2 # N. For each anode in the multiple anodes, the laser units located in different rows and columns can be connected in series through the anodes to form inclined columns, the multiple anodes are connected in series to form multiple mutually-spaced inclined columns, and for each cathode in the multiple cathodes, the laser units in the same column are connected in series through the cathodes to form multiple mutually-spaced inclined columns. And all the cathodes are connected in parallel. According to the addressable semiconductor laser array, the lasers located in different rows and different columns are connected in series through the anodes, each laser unit can be controlled to emit light independently, any specific adjacent three laser units can emit light at the same time, then the addressable semiconductor laser array can emit light in various modes, and the application range of the addressable semiconductor laser array is widened.

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

A manufacturing method for a light-emitting device, the manufacturing method including: preparing a first substrate provided with a plurality of light-emitting bodies; preparing a second substrate including a first bonding portion having conductivity, a first pad portion electrically connected to the first bonding portion, and a first solder regulating portion located between the first bonding portion and the first pad portion, the second substrate including a solder formed on the first bonding portion; bonding a first object selected from the plurality of light-emitting bodies to the second substrate with the solder; and transferring the first object to the second substrate by separating the first substrate and the second substrate from each other.

The invention discloses a high-power picosecond pulse train laser with programmable sub-pulse energy and a method, and relates to the related technical field of lasers, the high-power picosecond pulse train laser comprises a mode-locked fiber laser, an acousto-optic modulator and a solid amplification chain which are sequentially arranged along an optical transmission path; the mode-locked fiber laser generates a mode-locked picosecond pulse sequence; the acousto-optic modulator performs pulse selection and pulse string grouping on the mode-locked picosecond pulse sequence, and performs pre-programming shaping on sub-pulse energy in a pulse string according to set intensity distribution to generate a pre-shaped pulse string; the solid amplification chain comprises at least one stage of solid amplifier, and the solid amplifier comprises a dichroscope, a laser gain crystal, a coupling optical assembly and an LD pumping source; and the dichroscope is used for focusing the pre-shaped pulse string amplified at the previous stage and the LD pump light transmitted by the coupling optical assembly into the laser gain crystal. Independent programmable regulation and control of the energy of each sub-pulse in the pulse string are realized, and the energy distribution of each sub-pulse in the pulse string can be flexibly adjusted.

A laser beam generation device includes power supply units, LD modules, a combiner, and a control device. The LD modules receive currents from the power supply units, and output laser beams. The combiner collects the laser beams and outputs one laser beam. The control device generates control signals such that power of the laser beam becomes a laser output setting value and such that the currents become current command values. Phases of pulses of the control signals are shifted from each other by 60 degrees.

Integrated laser arrays, photonic devices, packages, and systems are disclosed. An example integrated laser array includes first and second lasers, each laser including a light-emitter structure and a waveguide with a grating. In one aspect, effective pitches of the gratings of the first and second lasers are different by less than about 5 angstroms, while the gratings of the first and second lasers are fabricated with a resolution of at least 1 nanometer. In another aspect, each laser includes a waveguide with left and right sidewall gratings, effective widths of the waveguides of the first and second lasers are different, and an offset between the left and right sidewall gratings of the second laser is different from an offset between the left and right sidewall gratings of the first laser. Integrated laser arrays described herein may be particularly suitable for being implemented in dense wavelength division multiplexed systems.

A laser apparatus includes: one or more laser diodes and two or more optical combiners. Further, output sides of the one or more laser diodes are connected to an input side of one optical combiner among the two or more optical combiners, and an output side of the one optical combiner is connected to an input side of an optical combiner other than the one optical combiner.

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.

The invention discloses a high-power semiconductor laser array which is formed by sequentially and alternately placing and welding n semiconductor laser chips and n + 1 tungsten copper heat sinks, the width of each tungsten copper heat sink is larger than that of each semiconductor laser chip, and the upper surface and the lower surface of each semiconductor laser chip are wrapped by the tungsten copper heat sinks to form a sandwich structure. The emergent end face of the semiconductor laser chip extends out of the edge of the tungsten copper heat sink by 10-20 microns. The invention also discloses a packaging method. The current injection density of the laser module at the laser emitting end is low, so that the optical power density of the emitting end is reduced, the reliability of a device is improved, and the service life of the device is prolonged.

The invention belongs to the field of coherent combination, and discloses a multi-strategy segmented fusion adaptive SPGD algorithm for a laser coherent combination system. The method is used for solving the problems that in a traditional SPGD algorithm, due to the fact that a fixed gain coefficient and disturbance amplitude exist, the convergence speed and stability of the algorithm are contradictory, and the optimal performance is difficult to achieve in different environments and system states. According to the method, the algorithm is divided into three stages in the iteration process, and self-adaptive adjustment of the gain coefficient and the disturbance amplitude is realized according to the characteristics of a hardware system in combination with three different iteration strategies. According to the method, the convergence speed of the algorithm can be remarkably improved, meanwhile, the stability of the algorithm can be effectively improved, the algorithm has higher robustness in consideration of hardware system characteristics, and the good application prospect and feasibility of the algorithm are shown.

Photonic particles and methods of using particles in biological samples are disclosed. The particles are configured to emit laser light when stimulated by, for example, pump source energy. The particles may include: a gain medium having an inorganic material, an optical cavity having a high refractive index, and a coating having an organic material. The particles may be less than 3 microns along their longest axis. The particles may be attached to each other to form, for example, doublets and triplets. The particles may be injection locked by coupling an injection beam into the particles during pumping, so that the injection seeds are amplified to develop into laser oscillations. The microscope system may include a pump source, a beam scanner, a spectrometer having a resolution of less than 1 nanometer and an acquisition rate of greater than 1 kilohertz, and a spectrum analyzer configured to distinguish the spectral peaks output by the laser from a broadband background.

Consistent with the present disclosure, a compact laser with extended tunability (CLET) is provided that includes multiple segments or sections, at least one of which is curved, bent or non-collinear with other segments, so that the CLET has a compact form factor either as a singular laser or when integrated with other devices. The term CLET, as used herein, refers to any of the laser configurations disclosed herein having mirrors and a bent, angled or curved part, portion or section between such mirrors. If bent, the bent portion is preferably oriented at an angle of at least 30 degrees relative to other portions of the CLET. Alternatively, the curve or bend portion may be distributed over different sections of the CLET over a series of arcs, for example. The waveguide extending between the mirrors is continuous, such that light propagating along the waveguide is not divided or split. The waveguide also constitutes a continuous waveguide path.

A dual optical frequency comb light-emitting device includes a first optical-frequency-comb laser source that includes a first laser resonator having a first optical path length, a second optical-frequency-comb laser source that includes a second laser resonator having a second optical path length different from the first optical path length, and an optical coupler that causes a first portion of first optical-frequency-comb laser light emitted from the first laser resonator to enter the second laser resonator. The first optical-frequency-comb laser source outputs a second portion of the first optical-frequency-comb laser light to an outside. The second optical-frequency-comb laser source outputs second optical-frequency-comb laser light emitted from the second laser resonator to the outside.

The invention relates to the technical field of laser, in particular to an on-chip series edge-emitting semiconductor laser array and a process method. The on-chip series edge-emitting semiconductor laser array sequentially comprises a semi-insulating substrate, a non-doped buffer layer, a P-type heavily doped layer, a P-type tunnel junction layer, an N-type tunnel junction layer, an N-type cladding, an N-type waveguide layer, an active region, a P-type waveguide layer, a P-type cladding and a P-type cover layer from bottom to top. Table surfaces on the two sides of each light-emitting unit are deeply etched to the P-type heavily doped layer, and a lateral current diffusion suppression groove is formed between the bottoms of any two adjacent light-emitting units. An on-chip series edge-emitting semiconductor laser array structure is adopted, the parasitic effect is reduced through coplanar electrode design, upper and lower electrodes can be prepared through a single process to reduce the cost, lateral current diffusion suppression grooves are formed between light-emitting units to reduce crosstalk, the light-emitting units are connected in series to work under the same injection current, and the light-emitting efficiency is improved. The requirements of a driving circuit can be effectively reduced, and light-emitting uniformity is improved.

The invention relates to the technical field of optoelectronic devices, in particular to a multi-wavelength laser packaging device and detection equipment, and the multi-wavelength laser packaging device comprises a substrate, a box dam and a light-transmitting material which are sequentially arranged from bottom to top; the multi-wavelength laser packaging device further comprises a reflection component and a plurality of laser chips. The center of the reflection component is arranged at the center of the bottom of a cavity formed by the box dam, and the laser chips are symmetrically arranged on the two sides of the reflection component. The plurality of laser chips are used for emitting laser with at least one wavelength to irradiate an incidence point of the reflecting component; and the reflecting component is used for reflecting laser emitted by each laser chip, emitting the laser to the outside through the light-transmitting material, and converging the laser at a preset fixed distance from the chip. Different-wavelength lasers emitted by a plurality of integrated laser chips are converged at a fixed distance through the reflecting component, so that simultaneous detection of multi-wavelength lasers is realized, and portable design is facilitated.

A coherent fiber array laser power projection system scalable to large number of subapertures and includes sensors that produce signals dependent upon beam characteristics, and controllers configured to control beam characteristics to achieve either phasing of outgoing beams at transmitter plane or coherent beam combining at a remote target or both.

The invention provides a multichannel light emission chip array based on an asymmetric multi-quantum well technology, an asymmetric multi-quantum well layer is composed of compressive strain InGaAlAs quantum wells and tensile strain InGaAlAs quantum barriers, the compressive strain InGaAlAs quantum wells and the tensile strain InGaAlAs quantum barriers are distributed at intervals, and the light-emitting wavelengths of the compressive strain InGaAlAs quantum wells are gradually reduced from top to bottom to form an asymmetric structure; the grating layer is of an array structure composed of a plurality of gratings, a plurality of laser units are formed, the grating layer is manufactured by adopting a reconstruction equivalent chirp technology, a sampling grating structure with a uniform grating period is manufactured in each laser unit through holographic photoetching and ultraviolet lithography in sequence, and pi phase shift is arranged in the center of the sampling grating. The invention also provides a preparation method of the multi-channel light emission chip array. According to the invention, accurate control of emission wavelength can be realized, sufficient gain is provided for each laser unit through the quantum well with an asymmetric structure, the single-mode yield and transmission capacity are improved, the preparation difficulty of the grating is simplified, and the demand of emerging calculation application for the Internet transmission rate is met.

The invention discloses a semiconductor laser, which comprises a laser light source; the polarizer comprises an incident side, a first reflection light-emitting side, a second reflection light-emitting side and a transmission light-emitting side; the first wave plate is arranged on the first reflection light emitting side; the second wave plate is arranged on the transmission light-emitting side; during working, laser emitted by the laser light source comprises first polarized light and second polarized light, the polarization directions of the first polarized light and the second polarized light are perpendicular to each other, and the laser enters the polarizer from the incidence side; the first polarized light is reflected by the polarizer, passes through the first wave plate to be subjected to polarization turning and is emitted along a first emergent light path, and part of light reflected back along the first emergent light path on the working surface passes through the first wave plate to be subjected to polarization turning again and passes through the polarizer to be emitted from a second reflection emergent light side; the second polarized light passes through the polarizer and the second wave plate to be subjected to polarization turning and is emitted out along a second emergent light path, and part of light reflected back along the second emergent light path on the working surface is subjected to polarization turning through the second wave plate again, then enters the polarizer and is reflected out from the second reflection emergent light side.

Optical parametric amplifier with an amplifier crystal and a mirror arrangement with a plurality of mirrors, wherein the mirror arrangement has an input mirror and an output mirror, wherein pump light is coupled into the mirror arrangement via the input mirror, wherein signal light and idler light are generated in the amplifier crystal by means of the pump light, wherein the signal light leaves the mirror arrangement via the output mirror, wherein in the mirror arrangement the pump light is guided multiple times through the amplifier crystal, and wherein pump light and signal light are guided collinearly in the mirror arrangement.

A light source generates a high brightness combined light beam by coherently combining a plurality of light beams generated or amplified by an optical array comprising a plurality flared optical gain regions. The plurality of light beams generated or amplified by the optical array can have a common wavelength and can be passively or actively phase locked and coherently combined to generate the combined light beam. The plurality of light beams generated or amplified by the optical array can have different wavelengths and can be spectrally combined to generate the high brightness light beam. The radiance of the high brightness light beam can be greater than the radiance of the individual light beams, and its beam quality can be close to the beam quality of the individual light beams.