1846results about "Laser arrangements" patented technology

The invention belongs to the related technical field of lasers, and provides a high-power subnanosecond-nanosecond laser in order to solve the problems that the range adjustment and the application range of an existing laser are limited, and the structural stability needs to be improved. A modulation semiconductor seed source, an optical fiber pre-amplifier, a light beam isolation system, a high repetition frequency solid pre-amplifier, an acousto-optic modulator frequency reduction module and a multi-stage solid single-pass main amplifier are sequentially arranged along an optical path, continuous adjustable output of repetition frequency and pulse width is achieved, the adjustable range of the repetition frequency is 100 kHz to 1 MHz, the adjustable range of the pulse width is 100 ps to 10 ns, and the adjustable range of the pulse width is 100 ps to 10 ns. The laser power and the light beam quality are remarkably improved, and the method is suitable for the fields of high-precision micromachining, nonlinear optical research, medical cosmetology and the like.

The invention discloses an extensible multi-path beam combination laser assembly and a laser, and relates to the technical field of laser beam combination. The extensible multi-path beam combining laser assembly comprises a half-wave plate, a reflecting element, a polaroid, a Q switch, a controller and 2n basic lasers. The basic laser can output initial pulse laser with the polarization direction being the first direction, every two of the 2n initial pulse laser beams can be combined into 2n-1 pulse laser beams, and every two of the 2n-1 pulse laser beams can be combined into 2n-2 pulse laser beams until the 2n pulse laser beams are combined into one beam of output pulse laser. When the Q switch is turned on, the polarization direction of the pulse laser penetrating through the Q switch can be deflected by 90 degrees. When the pulse laser beams are combined, the first pulse laser beam passes through a Q switch and a reflecting element which are arranged along the light path of the first pulse laser beam, the polarization direction is the first direction or the second direction, and the first pulse laser beam is reflected to a polaroid arranged along the light path of the second pulse laser beam to be combined. Therefore, beam combination of multiple paths of laser is achieved, and even if light path faults exist, the multiple paths of laser after beam combination can be output.

An optical emission array includes an optical input portion configured to provide a parent laser source for the optical emission array, and an optical output portion including a plurality of child laser emitters. Each child laser emitter of the plurality of child laser emitters is injection-locked to the parent laser source. The optical emission array further includes at least two optical distribution branches (i) disposed between the optical input portion and the optical output portion, and (ii) optically connecting at least two child laser emitters of the plurality of child laser emitters, respectively, to the parent laser source.

The embodiment of the invention provides a light-emitting device and laser equipment, and relates to the technical field of laser. The light emitting device includes: a mounting substrate including a connection pattern, connection pads, and an in-board interconnection region, the connection pads being electrically connected through the in-board interconnection region and the connection pattern; the light-emitting unit comprises a packaging tube shell and a laser chip arranged in the packaging tube shell; the light-emitting units are fixed on the connecting patterns of the mounting substrate, and the laser chips of each color are electrically connected with the two corresponding connecting bonding pads through the side wall wires, the conductive structures, the conductive areas and the in-board interconnection areas, so that independent power supply of the laser chips of different colors is realized. The problem that the using number of the laser chips is limited by the driving circuit is solved, the number of the driving circuit is not increased while the number of the laser chips is increased, the working efficiency of the driving circuit is effectively improved, and the cost is reduced.

The invention provides an all-solid-state high-power single-frequency laser based on an optical fiber-slab mixed structure, and relates to the technical field of solid lasers, and the all-solid-state high-power single-frequency laser comprises an all-solid-state continuous single-frequency seed module, an optical fiber pulse modulation module, an optical fiber pre-amplification module, a slab laser pre-amplification module, a slab laser main amplification module and a frequency multiplication module which are sequentially arranged; the lath laser pre-amplifier and the lath laser main amplifier are used for compensating thermally induced aberration generated by lath laser through multi-pass amplification designed according to the spherical aberration self-compensation principle, and then the quality of light beams is improved. In addition, a discrete mirror group is adopted to replace a complete amplifier cavity mirror, spontaneous radiation and parasitic oscillation in the working process of the amplifier are effectively restrained, nearly hundred mJ-magnitude single-frequency pulse laser with excellent light beam quality can be obtained, and application to laser radar detection or industry can be met.

Integrated laser arrays, photonic devices, packages, and systems are disclosed. An example integrated laser array includes a first laser and a second laser, each laser including a light emitter structure and a waveguide having a grating. In one aspect, the effective pitch of the gratings of the first and second lasers differs by less than about 5 angstroms, while the gratings of the first and second lasers are fabricated at a resolution of at least 1 nm. In another aspect, each laser includes a waveguide having a left sidewall grating and a right sidewall grating, the effective widths of the waveguides of the first and second lasers are different, and an offset between the left sidewall grating and the right sidewall grating of the second laser is different than an offset between the left sidewall grating and the right sidewall grating of the first laser. The integrated laser arrays described herein may be particularly suited for implementation in dense wavelength division multiplexing systems.

The invention relates to the technical field of semiconductor lasers, and particularly provides an addressable semiconductor laser array, which comprises M # imgabs0 # N laser units, a plurality of anodes and a plurality of cathodes, the M # imgabs1 # N laser units are arranged in an array mode according to M # imgabs2 # N. For each anode in the multiple anodes, the laser units located in different rows and columns can be connected in series through the anodes to form inclined columns, the multiple anodes are connected in series to form multiple mutually-spaced inclined columns, and for each cathode in the multiple cathodes, the laser units in the same column are connected in series through the cathodes to form multiple mutually-spaced inclined columns. And all the cathodes are connected in parallel. According to the addressable semiconductor laser array, the lasers located in different rows and different columns are connected in series through the anodes, each laser unit can be controlled to emit light independently, any specific adjacent three laser units can emit light at the same time, then the addressable semiconductor laser array can emit light in various modes, and the application range of the addressable semiconductor laser array is widened.

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

A manufacturing method for a light-emitting device, the manufacturing method including: preparing a first substrate provided with a plurality of light-emitting bodies; preparing a second substrate including a first bonding portion having conductivity, a first pad portion electrically connected to the first bonding portion, and a first solder regulating portion located between the first bonding portion and the first pad portion, the second substrate including a solder formed on the first bonding portion; bonding a first object selected from the plurality of light-emitting bodies to the second substrate with the solder; and transferring the first object to the second substrate by separating the first substrate and the second substrate from each other.

The invention discloses a high-power picosecond pulse train laser with programmable sub-pulse energy and a method, and relates to the related technical field of lasers, the high-power picosecond pulse train laser comprises a mode-locked fiber laser, an acousto-optic modulator and a solid amplification chain which are sequentially arranged along an optical transmission path; the mode-locked fiber laser generates a mode-locked picosecond pulse sequence; the acousto-optic modulator performs pulse selection and pulse string grouping on the mode-locked picosecond pulse sequence, and performs pre-programming shaping on sub-pulse energy in a pulse string according to set intensity distribution to generate a pre-shaped pulse string; the solid amplification chain comprises at least one stage of solid amplifier, and the solid amplifier comprises a dichroscope, a laser gain crystal, a coupling optical assembly and an LD pumping source; and the dichroscope is used for focusing the pre-shaped pulse string amplified at the previous stage and the LD pump light transmitted by the coupling optical assembly into the laser gain crystal. Independent programmable regulation and control of the energy of each sub-pulse in the pulse string are realized, and the energy distribution of each sub-pulse in the pulse string can be flexibly adjusted.

Integrated laser arrays, photonic devices, packages, and systems are disclosed. An example integrated laser array includes first and second lasers, each laser including a light-emitter structure and a waveguide with a grating. In one aspect, effective pitches of the gratings of the first and second lasers are different by less than about 5 angstroms, while the gratings of the first and second lasers are fabricated with a resolution of at least 1 nanometer. In another aspect, each laser includes a waveguide with left and right sidewall gratings, effective widths of the waveguides of the first and second lasers are different, and an offset between the left and right sidewall gratings of the second laser is different from an offset between the left and right sidewall gratings of the first laser. Integrated laser arrays described herein may be particularly suitable for being implemented in dense wavelength division multiplexed systems.

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.

The invention discloses a high-power semiconductor laser array which is formed by sequentially and alternately placing and welding n semiconductor laser chips and n + 1 tungsten copper heat sinks, the width of each tungsten copper heat sink is larger than that of each semiconductor laser chip, and the upper surface and the lower surface of each semiconductor laser chip are wrapped by the tungsten copper heat sinks to form a sandwich structure. The emergent end face of the semiconductor laser chip extends out of the edge of the tungsten copper heat sink by 10-20 microns. The invention also discloses a packaging method. The current injection density of the laser module at the laser emitting end is low, so that the optical power density of the emitting end is reduced, the reliability of a device is improved, and the service life of the device is prolonged.

The invention belongs to the field of coherent combination, and discloses a multi-strategy segmented fusion adaptive SPGD algorithm for a laser coherent combination system. The method is used for solving the problems that in a traditional SPGD algorithm, due to the fact that a fixed gain coefficient and disturbance amplitude exist, the convergence speed and stability of the algorithm are contradictory, and the optimal performance is difficult to achieve in different environments and system states. According to the method, the algorithm is divided into three stages in the iteration process, and self-adaptive adjustment of the gain coefficient and the disturbance amplitude is realized according to the characteristics of a hardware system in combination with three different iteration strategies. According to the method, the convergence speed of the algorithm can be remarkably improved, meanwhile, the stability of the algorithm can be effectively improved, the algorithm has higher robustness in consideration of hardware system characteristics, and the good application prospect and feasibility of the algorithm are shown.

The invention discloses a semiconductor laser, which comprises a laser light source; the polarizer comprises an incident side, a first reflection light-emitting side, a second reflection light-emitting side and a transmission light-emitting side; the first wave plate is arranged on the first reflection light emitting side; the second wave plate is arranged on the transmission light-emitting side; during working, laser emitted by the laser light source comprises first polarized light and second polarized light, the polarization directions of the first polarized light and the second polarized light are perpendicular to each other, and the laser enters the polarizer from the incidence side; the first polarized light is reflected by the polarizer, passes through the first wave plate to be subjected to polarization turning and is emitted along a first emergent light path, and part of light reflected back along the first emergent light path on the working surface passes through the first wave plate to be subjected to polarization turning again and passes through the polarizer to be emitted from a second reflection emergent light side; the second polarized light passes through the polarizer and the second wave plate to be subjected to polarization turning and is emitted out along a second emergent light path, and part of light reflected back along the second emergent light path on the working surface is subjected to polarization turning through the second wave plate again, then enters the polarizer and is reflected out from the second reflection emergent light side.

Optical parametric amplifier with an amplifier crystal and a mirror arrangement with a plurality of mirrors, wherein the mirror arrangement has an input mirror and an output mirror, wherein pump light is coupled into the mirror arrangement via the input mirror, wherein signal light and idler light are generated in the amplifier crystal by means of the pump light, wherein the signal light leaves the mirror arrangement via the output mirror, wherein in the mirror arrangement the pump light is guided multiple times through the amplifier crystal, and wherein pump light and signal light are guided collinearly in the mirror arrangement.

Embodiments of the present application relate to the technical field of optical sensing, and provide a laser array and a laser radar. The differential resistance of the laser array is adjustable, and the optical power of output emitted laser light is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer, and a second reflecting layer which are sequentially arranged in an epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer, and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, a light blocking layer is further provided on the side of the fourth reflecting layer away from the second active layer, and the projection of the light blocking layer on the second active layer overlaps the projection of the second oxidation hole on the second active layer; the first laser is electrically connected to the second laser.

A semiconductor body is described, comprising an n-doped semiconductor layer (3), a p-doped semiconductor layer (4), and an active region (5). The active region (5) is located, at least partially, between the n-doped semiconductor layer (3) and the p-doped semiconductor layer (4). In a region (6) located on the side of the active region (5) facing away from the n-doped semiconductor layer (3), the electron density is higher than the hole density. Furthermore, a semiconductor laser and a method for manufacturing a semiconductor laser are specified.

A coherent optical injection locking (COIL) apparatus generates multiple optical source outputs from a single optical source generated by a parent laser. The COIL apparatus includes a plurality of optical source generators each having a child laser, of lesser performance than the parent laser, that is injection locked to the single optical source. The optical source generators may have one or both of a shared configuration and a cascaded configuration that replicates the single optical source, or a single wavelength of the single optical source when it is a comb source.

The invention provides a fiber laser dichroic mirror synthesis control system and method based on multi-dimensional real-time feedback. The method comprises the steps that all light sources output light beams with different wavelengths; each light source corresponds to a multi-dimensional adjustment module, and adjustment of multi-dimensional control parameters of each light beam is realized through the multi-dimensional adjustment module; the synthesis module realizes cascade synthesis of light beams through dichroic mirror arrays which are arranged according to the wavelength gradient of the light beams, outputs combined light beams, monitors the power, light spot morphology, spectrum and pointing data of the combined light beams in real time, and outputs monitoring data; and the feedback controller is used for converting the monitoring data into a multi-dimensional control vector and dynamically adjusting the multi-dimensional adjusting module corresponding to each light source to form multi-dimensional cooperative closed-loop control. According to the invention, the problem of light beam quality degradation caused by environmental disturbance of a traditional dichroic mirror synthesis system is solved, the anti-interference capability of the system is enhanced through multi-degree-of-freedom closed-loop control, modular expansion is supported at the same time, and rapid expansion can be realized when a synthesis laser unit needs to be newly added.

The invention relates to an optoelectronic laser device comprising: a semiconductor layer stack having an active zone arranged between a first layer of a first conductivity type and a second layer of a second conductivity type, at least one structure designed to constrict current in the active zone to generate laser radiation, and a first front side extending from a first top side in the direction of a first bottom side opposite the first top side and having an exit window for the laser radiation generated in the active zone;a carrier substrate with an electrical via extending from a second top side to an opposite second bottom side, and a second front side extending from the second bottom side toward the second top side, the second front side having a first section adjoining the second top side and a second section set back from the first section; and an electrical contact layer arranged on the first bottom side and configured to be arranged on a contact element and electrically connected to the first layer. The first top side and the second bottom side are arranged adjacent to one another in contact, and the electrical via is electrically connected to the second layer.

The utility model discloses a semiconductor laser optical fiber coupling module. The semiconductor laser optical fiber coupling module comprises a semiconductor laser chipset, a first collimating lens array, a first reflecting mirror, a wedge-shaped mirror, a polarization splitting prism, a first reflecting prism, a second reflecting prism, a second collimating lens and an optical fiber, the light beam emitted by the first reflector is not parallel to the base any more, is integrally deflected through the wedge-shaped mirror and then is parallel to the base again, and then enters the optical fiber after being reflected and deflected for several times. According to the semiconductor laser optical fiber coupling module, the step height is converted into the wedge-shaped lens angle through the wedge-shaped lens, no step height design exists between adjacent chips, two paths of light beams enter the optical fiber after being subjected to a series of light beam shaping, the overall height of the device is reduced, the size of the semiconductor laser is reduced, more chip sets can be arranged, and the device reliability is improved. And the output power of the semiconductor laser is improved.

The utility model provides a double-row packaged semiconductor laser, which belongs to the technical field of semiconductor lasers, and comprises a water channel, a water inlet and a water outlet are arranged at the bottom of the water channel, and a water inlet channel and a water outlet channel are arranged inside the water channel; the heat sink is fixedly arranged on one side of the water channel, and a plurality of heat dissipation teeth are arranged in each heat dissipation channel in the length direction of the channel; the lower ends of the two heat dissipation channels communicate with the water inlet channel, and the upper ends of the two heat dissipation channels communicate with the water outlet channel. Two laser chip sets; the two laser chips at the top end are connected in series; the two laser chip sets are packaged on one side of the heat sink and are respectively matched with the two heat dissipation channels; laser chips at the tail ends of the two laser chip sets are externally connected with a power supply through two lead electrodes; the front cover sleeves the outer sides of the heat sink and the two laser chip sets, and one end of the front cover is fixedly connected with the water channel; and the lens and the light guide crystal are sequentially and fixedly arranged on the two positioning steps respectively. The double-row packaged semiconductor laser can effectively solve the problems of poor heat dissipation and light spot homogenization.

A semiconductor light emitting device includes an edge-emitting element including emitters, a first front-surface electrode, a second front-surface electrode, first wires, and second wires. The emitters include a first emitter including a first element electrode, and a second emitter including a second element electrode. The first front-surface electrode is electrically connected to the first element electrode. The second front-surface electrode is electrically connected to the second element electrode. The first wires are electrically connecting the first element electrode to the first front-surface electrode. The second wires are electrically connecting the second element electrode to the second front-surface electrode. In plan view, a largest distance between adjacent ones of the second wires in the first direction is greater than a largest distance between adjacent ones of the first wires in the first direction.

The invention discloses a wavelength thermal tuning photon integrated device and a preparation method thereof.The device comprises a substrate, a modulator layer, a front sampling grating layer, a gain layer, a rear sampling grating layer, a cover layer and an electric contact layer, the cover layer and the electric contact layer jointly form a shallow ridge waveguide structure, and the shallow ridge waveguide structure is transversely arranged in the center of the upper portion of each functional layer; the whole cover layer and the electric contact layer are etched according to a preset ridge-shaped strip pattern, a cantilever beam structure is transversely arranged in the post-sampling grating layer, the cantilever beam structure comprises a cantilever beam and air grooves in the two sides of the cantilever beam, and the cantilever beam is located under the shallow ridge waveguide structure; the cantilever beam structure is formed by etching the rear sampling grating layer below the shallow ridge waveguide structure according to a preset cantilever strip pattern; according to the technical scheme, wavelength thermal tuning is achieved through collaborative design of the shallow ridge waveguide structure and the cantilever beam grating structure, limitation of material carrier concentration is avoided, thermal response is fast, and power consumption is remarkably reduced.

The utility model belongs to the field of laser application, and relates to beam shaping of a laser, in particular to a small-divergence-angle laser based on a beam shaping technology. The problems that in the prior art for laser diode collimation, astigmatism of the diode cannot be calibrated through single-lens collimation, and cost is increased due to the fact that fast axis collimation and slow axis collimation need to customize a fast axis collimating lens with a proper focal length are solved. The utility model discloses a small-divergence-angle laser based on a beam shaping technology. A first collimating lens, a fast-axis beam shrinking device and a beam expander are sequentially arranged on an emergent light path of a first laser diode; the light emitting point of the first laser diode is located at the focal point of the first collimating lens, the fast axis beam shrinking device comprises a first cylindrical lens and a second cylindrical lens, and the focal points of the first cylindrical lens and the second cylindrical lens coincide. According to the utility model, the divergence angle of the laser diode is reduced to 0.1 mrad, so that the diameter of a light spot at 500m is less than 100mm, and the actual light spot observed in an experiment is 80mm.

The invention relates to a stacked laser arrangement, including a first laser device having a light exit side and a semiconductor body which forms a resonator and has an active zone and two main sides and side faces arranged substantially perpendicular thereto; wherein the laser device has at least one contact region on a first of the two main sides. Moreover, a first spacer having a first contact main side and a contact side face is provided, with the contact main side having at least one contact line which leads from a contact region to a connection area on or adjacent to the contact side face. With its first main side facing the first contact main side, the first laser device is fastened to the first spacer such that the at least one contact region is electrically connected to the contact region of the first contact main side, and the side faces of the first laser device are spaced apart from the contact side face.

A light emitting device is provided including a wavelength conversion structure configured to convert electromagnetic radiation of a first wavelength in to an electromagnetic radiation of a second wavelength; a plurality of light sources, wherein at least one light source is configured to emit an electromagnetic radiation of the first wavelength, wherein the plurality of light sources are arranged on or above the wavelength conversion structure; and an optical metastructure configured as optical cavity comprising a resonance frequency at about the second wavelength.

The invention provides a system and a method for realizing coherent beam combination of a semiconductor laser array. The system comprises a seed source, a collimating mirror, a beam expander, a first beam splitter, the semiconductor laser array, a fast and slow axis collimator, a phase algorithm controller, a beam combiner and a high-speed photoelectric detector which are sequentially arranged along a laser transmission direction, a laser beam emitted by a seed source is collimated by a collimating mirror, the diameter of the laser beam is increased by a beam expander, and then the laser beam is divided into a plurality of sub-beams by a first beam splitter; respectively coupling and inputting the plurality of sub-beams into a semiconductor laser array for optical signal amplification; the amplified sub-beams are collimated, and a combined laser beam is generated through a beam combiner; the combined laser beam in the first preset proportion range is coupled and input into the high-speed photoelectric detector for optical signal detection, an optical signal is converted into an electric signal, the electric signal is fed back to the phase algorithm controller for active on-chip phase adjustment, the brightness of the combined laser beam is greatly improved, and the structure is simple.

[Problem] To accurately perform a distance measurement process even when the light emission timing of a light-emitting element fluctuates. [Solution] This distance measurement device comprises: a light-receiving unit for receiving a light pulse emitted intermittently by a light-emitting element and receiving a reflected light pulse from a distance-measurement object that reflects the light pulse emitted by the light-emitting element; a light emission time detection unit for detecting the light emission time of the light-emitting element on the basis of the light reception timing of the light pulse received by the light-receiving unit; a time shift unit for shifting the light reception timing of the reflected light pulse received by the light-receiving unit so that the light emission time of the light-emitting element detected by the light emission time detection unit becomes a reference time; and a histogram generation unit for generating, on the basis of the light reception timing of the reflected light pulse shifted by the time shift unit, a histogram showing the light reception frequency for each light reception time of the intermittently received reflected light pulse.