1313results about "Laser arrangements" patented technology

The invention belongs to the related technical field of lasers, and provides a high-power subnanosecond-nanosecond laser in order to solve the problems that the range adjustment and the application range of an existing laser are limited, and the structural stability needs to be improved. A modulation semiconductor seed source, an optical fiber pre-amplifier, a light beam isolation system, a high repetition frequency solid pre-amplifier, an acousto-optic modulator frequency reduction module and a multi-stage solid single-pass main amplifier are sequentially arranged along an optical path, continuous adjustable output of repetition frequency and pulse width is achieved, the adjustable range of the repetition frequency is 100 kHz to 1 MHz, the adjustable range of the pulse width is 100 ps to 10 ns, and the adjustable range of the pulse width is 100 ps to 10 ns. The laser power and the light beam quality are remarkably improved, and the method is suitable for the fields of high-precision micromachining, nonlinear optical research, medical cosmetology and the like.

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

The invention discloses a high-power picosecond pulse train laser with programmable sub-pulse energy and a method, and relates to the related technical field of lasers, the high-power picosecond pulse train laser comprises a mode-locked fiber laser, an acousto-optic modulator and a solid amplification chain which are sequentially arranged along an optical transmission path; the mode-locked fiber laser generates a mode-locked picosecond pulse sequence; the acousto-optic modulator performs pulse selection and pulse string grouping on the mode-locked picosecond pulse sequence, and performs pre-programming shaping on sub-pulse energy in a pulse string according to set intensity distribution to generate a pre-shaped pulse string; the solid amplification chain comprises at least one stage of solid amplifier, and the solid amplifier comprises a dichroscope, a laser gain crystal, a coupling optical assembly and an LD pumping source; and the dichroscope is used for focusing the pre-shaped pulse string amplified at the previous stage and the LD pump light transmitted by the coupling optical assembly into the laser gain crystal. Independent programmable regulation and control of the energy of each sub-pulse in the pulse string are realized, and the energy distribution of each sub-pulse in the pulse string can be flexibly adjusted.

The invention discloses a semiconductor laser, which comprises a laser light source; the polarizer comprises an incident side, a first reflection light-emitting side, a second reflection light-emitting side and a transmission light-emitting side; the first wave plate is arranged on the first reflection light emitting side; the second wave plate is arranged on the transmission light-emitting side; during working, laser emitted by the laser light source comprises first polarized light and second polarized light, the polarization directions of the first polarized light and the second polarized light are perpendicular to each other, and the laser enters the polarizer from the incidence side; the first polarized light is reflected by the polarizer, passes through the first wave plate to be subjected to polarization turning and is emitted along a first emergent light path, and part of light reflected back along the first emergent light path on the working surface passes through the first wave plate to be subjected to polarization turning again and passes through the polarizer to be emitted from a second reflection emergent light side; the second polarized light passes through the polarizer and the second wave plate to be subjected to polarization turning and is emitted out along a second emergent light path, and part of light reflected back along the second emergent light path on the working surface is subjected to polarization turning through the second wave plate again, then enters the polarizer and is reflected out from the second reflection emergent light side.

A coherent optical injection locking (COIL) apparatus generates multiple optical source outputs from a single optical source generated by a parent laser. The COIL apparatus includes a plurality of optical source generators each having a child laser, of lesser performance than the parent laser, that is injection locked to the single optical source. The optical source generators may have one or both of a shared configuration and a cascaded configuration that replicates the single optical source, or a single wavelength of the single optical source when it is a comb source.

The invention relates to an optoelectronic laser device comprising: a semiconductor layer stack having an active zone arranged between a first layer of a first conductivity type and a second layer of a second conductivity type, at least one structure designed to constrict current in the active zone to generate laser radiation, and a first front side extending from a first top side in the direction of a first bottom side opposite the first top side and having an exit window for the laser radiation generated in the active zone;a carrier substrate with an electrical via extending from a second top side to an opposite second bottom side, and a second front side extending from the second bottom side toward the second top side, the second front side having a first section adjoining the second top side and a second section set back from the first section; and an electrical contact layer arranged on the first bottom side and configured to be arranged on a contact element and electrically connected to the first layer. The first top side and the second bottom side are arranged adjacent to one another in contact, and the electrical via is electrically connected to the second layer.

A semiconductor light emitting device includes an edge-emitting element including emitters, a first front-surface electrode, a second front-surface electrode, first wires, and second wires. The emitters include a first emitter including a first element electrode, and a second emitter including a second element electrode. The first front-surface electrode is electrically connected to the first element electrode. The second front-surface electrode is electrically connected to the second element electrode. The first wires are electrically connecting the first element electrode to the first front-surface electrode. The second wires are electrically connecting the second element electrode to the second front-surface electrode. In plan view, a largest distance between adjacent ones of the second wires in the first direction is greater than a largest distance between adjacent ones of the first wires in the first direction.

The invention discloses a wavelength thermal tuning photon integrated device and a preparation method thereof.The device comprises a substrate, a modulator layer, a front sampling grating layer, a gain layer, a rear sampling grating layer, a cover layer and an electric contact layer, the cover layer and the electric contact layer jointly form a shallow ridge waveguide structure, and the shallow ridge waveguide structure is transversely arranged in the center of the upper portion of each functional layer; the whole cover layer and the electric contact layer are etched according to a preset ridge-shaped strip pattern, a cantilever beam structure is transversely arranged in the post-sampling grating layer, the cantilever beam structure comprises a cantilever beam and air grooves in the two sides of the cantilever beam, and the cantilever beam is located under the shallow ridge waveguide structure; the cantilever beam structure is formed by etching the rear sampling grating layer below the shallow ridge waveguide structure according to a preset cantilever strip pattern; according to the technical scheme, wavelength thermal tuning is achieved through collaborative design of the shallow ridge waveguide structure and the cantilever beam grating structure, limitation of material carrier concentration is avoided, thermal response is fast, and power consumption is remarkably reduced.

The utility model belongs to the field of laser application, and relates to beam shaping of a laser, in particular to a small-divergence-angle laser based on a beam shaping technology. The problems that in the prior art for laser diode collimation, astigmatism of the diode cannot be calibrated through single-lens collimation, and cost is increased due to the fact that fast axis collimation and slow axis collimation need to customize a fast axis collimating lens with a proper focal length are solved. The utility model discloses a small-divergence-angle laser based on a beam shaping technology. A first collimating lens, a fast-axis beam shrinking device and a beam expander are sequentially arranged on an emergent light path of a first laser diode; the light emitting point of the first laser diode is located at the focal point of the first collimating lens, the fast axis beam shrinking device comprises a first cylindrical lens and a second cylindrical lens, and the focal points of the first cylindrical lens and the second cylindrical lens coincide. According to the utility model, the divergence angle of the laser diode is reduced to 0.1 mrad, so that the diameter of a light spot at 500m is less than 100mm, and the actual light spot observed in an experiment is 80mm.

Configurations are disclosed for multi-wavelength optical devices and systems. In particular, multi-wavelength optical devices that include separate chips optically connected via phonic wire bonds. The disclosed configurations can utilize photonic wire bond interconnects and photonic wire bond interconnection techniques, which may facilitate low-cost implementation of wavelength division multiplexed optical systems.

The invention discloses a preparation method and structure of a tunable laser, and the method comprises the steps: carrying out the surface layout of a substrate, and sequentially dividing the substrate into a front gain region, a front phase region, a common grating region, a rear phase region and a rear gain region; growing an active layer, manufacturing a butt-joint mask pattern in the gain region, etching to remove the active layer in the common grating region and the phase region, performing butt-joint growth of a passive layer, removing a mask, manufacturing a grating in the common grating region, and growing a cladding and an electric contact layer; manufacturing an inverted table shallow ridge waveguide structure, and etching an electrical isolation trench; and a cantilever arm structure is manufactured and formed in the common grating area, a titanium-platinum heating resistor, a grating electrode and a grounding electrode are manufactured, and the tunable laser is obtained after preparation of a P-surface electrode and an N-surface electrode is completed. The back-to-back double lasers share the thermal tuning grating, double-end light emitting and wavelength synchronous control are achieved, the cantilever arm structure of the grating ridge waveguide is manufactured, energy consumption of wavelength tuning is reduced, and a solution is provided for large-scale use of tunable light emitting chips in the future.

Implementations described herein are related to a diode driver that recirculates residual current from an operating current pulse in an inductor. Such recirculation produces a diagnostic current pulse to a diode array for measuring a voltage drop across a portion of the array. For example, after a controller charges an inductor of a diode driver to deliver operating current pulses to a portion of a diode array for illumination, the controller causes a residual current to remain and recirculate in the inductor. In some implementations, in response to the recirculating current reaching a monitoring threshold, the controller delivers a monitoring pulse to the portion of the diode array to measure a voltage drop across the portion of the diode array. In some implementations, the controller may infer defectivity in the portion of the array from such voltage drop measurements over time.

The invention discloses a beat frequency comparison device mediated by an optical frequency comb. The beat frequency comparison device comprises the optical frequency comb, a first frequency stabilized laser, a first beat frequency device, a first frequency mixer, a first high-pass filter, a second frequency stabilized laser, a second beat frequency device, a second frequency mixer, a second high-pass filter, a DDS signal generator, a third frequency mixer and a low-pass filter. Frequency-stabilized lasers output by the first frequency-stabilized laser and the second frequency-stabilized laser and an optical frequency comb output by the optical frequency comb are subjected to beat frequency in the first beat frequency device and the second beat frequency device respectively, and first beat frequency and second beat frequency are obtained; the first beat frequency and the second beat frequency are mixed with the carrier envelope offset frequency of the optical frequency comb, and a first sum frequency and a second sum frequency are filtered out; the first sum frequency obtains a synthetic frequency through direct digital frequency synthesis; the second sum frequency and the synthetic frequency are mixed in the third mixer, and then the difference frequency is filtered out through the low-pass filter. According to the invention, beat frequency comparison of frequency-stabilized lasers with different wavelengths can be realized, and the influence of the stability of the optical frequency comb is avoided.

A light emitting device comprising a germanium first layer; a nucleation layer; a buffer layer comprising a III-V composition; and an active layer. The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fabricated in an environment which must be free, or substantially free, of arsenic.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

A stepless semiconductor laser device (10), comprising a chip base (11), a plurality of laser chips (119), a plurality of fast-axis collimating mirrors (12), a plurality of slow-axis collimating mirrors (13), a plurality of first reflecting mirrors (14) and a beam-combining assembly, wherein the plurality of laser chips (119) are arranged on a surface of one side of the chip base (11), and the plurality of laser chips (119) have the same height in a direction perpendicular to the surface of the chip base (11); the plurality of laser chips (119) are divided into two rows and respectively serve as a first light-emitting assembly (111) and a second light-emitting assembly (112), and the plurality of laser chips (119) in the first light-emitting assembly (111) and the plurality of laser chips (119) in the second light-emitting assembly (112) are arranged in a staggered manner; in the light emission direction of each laser chip (119), a fast-axis collimating mirror (12), a slow-axis collimating mirror (13) and a first reflecting mirror (14) are arranged in sequence; and the beam-combining assembly is located on light reflection paths of the first reflecting mirrors (14) and is configured to perform beam combination on laser light that passes through the first reflecting mirrors (14).

The invention provides a broadband tunable light emitting chip based on an asymmetric multi-quantum well technology and a preparation method, the tunable light emitting chip comprises a plurality of laser units distributed in columns, and each column of laser units comprises a plurality of lasers connected in series; the laser units achieve single-waveguide laser output through cascade Y waveguide combination, each laser comprises an asymmetric multi-quantum well layer and a grating layer, the thickness of each quantum well is gradually decreased from top to bottom, and a grating is located on the surface of the upper limiting layer. The tunable lasers connected in series and in parallel are adopted, and single-waveguide laser output is achieved through cascade Y waveguide combination; the asymmetric multiple quantum wells are arranged, so that the overall tunable range of the laser can be widened; a sampling grating is manufactured through a reconstruction equivalent chirp technology to select a lasing wavelength, and pi phase shift is introduced to carry out phase matching so as to ensure single wavelength output; according to the invention, gains can be provided for a plurality of laser units, the density of monolithic integration is improved, the transmission capacity is increased, and the single-mode yield is improved.

A laser diode drive circuit is provided includes one or more laser diodes, a driving switching element that switches between a state in which a current is supplied to the one or more laser diodes and a state in which the current is not supplied, a driving capacitor that supplies a current to the one or more laser diodes, a drive circuit, and a boot strap circuit that supplies a voltage to the drive circuit. The boot strap circuit includes a capacitor and an inductor that suppresses a flow of a current that flows to the capacitor and to the one or more laser diodes connected in parallel during charging of the capacitor.

A control apparatus for a light source including a plurality of gas discharge chambers with a blower being arranged in each gas discharge chamber. The control apparatus includes: a fault monitoring module configured to, at regular intervals of usage of the light source, monitor one or more operating conditions of the light source, and, for each monitored operating condition, determine a fault status and a fault type that relates to which blower of a gas discharge chamber influences the monitored operating condition; and a control module configured to receive the determined fault statuses and the determined fault types from the fault monitoring module; select at least one gas discharge chamber; and send an instruction to the blower in the selected at least one gas discharge chamber, the instruction being based on the determined fault statuses and the determined fault types.

The invention provides a multi-wavelength integrated light source system and a manufacturing method thereof, the multi-wavelength integrated light source system comprises a PCSEL array and a photon integrated circuit, the PCSEL array comprises a plurality of PCSEL units, and photonic crystal structures of at least two PCSEL units in the plurality of PCSEL units are configured to have mutually different preset geometric parameters so as to respectively emit light with different wavelengths; the photonic integrated circuit comprises at least one wavelength division multiplexer; the photonic integrated circuit is formed on the photonic integration platform, and the PCSEL array and the photonic integrated circuit are physically bonded in a hybrid integration mode, so that light of different wavelengths emitted from at least two PCSEL units is coupled to different input ends of the wavelength division multiplexer.

A computer-implemented method for maintaining a light source includes, using a computer, learning, for each of M machine learning models, where each model is trained to classify a state of a module of the light source as requiring or not requiring maintenance, to (1) form a pair of performance parameters in a set of N performance parameters, (2) scoring each of the pairs to produce a pair score, and (3) summing the scores to produce a model score; the model with the highest score is also implemented, and the state of a particular module of a particular light source is repeatedly classified over time as maintenance is required or not required using the implemented model; and performing maintenance of the particular module when indicated by the model, where M is an integer greater than 1, and N is an integer greater than 2.

The invention relates to an optoelectronic arrangement comprising a first semiconductor laser device and a photonically integrated element optically coupled to the first semiconductor laser device. The first semiconductor laser device has a first laser light exit surface for coupling out a laser light generated by the first semiconductor laser device, wherein the first semiconductor laser device is configured to emit laser light having a different divergence angle in two mutually perpendicular directions.The photonically integrated element comprises a first laser light coupling surface which is optically coupled to the first laser light exit surface, a first waveguide section which adjoins the first laser light coupling surface and is designed to guide the laser light coupled into the first laser light coupling surface, a first light-shaping element which is at least optically coupled to the first waveguide section and is designed to shape the laser light emitted by the first semiconductor laser device in such a way that the laser light has a substantially equal divergence angle in the two mutually perpendicular directions after being coupled out of the photonically integrated element, and a first coupling-out element which is operatively connected to the first light-shaping element for emitting the shaped laser light.

The invention provides a high-power external cavity tunable quantum cascade laser output module. The high-power external cavity tunable quantum cascade laser output module comprises a first lens, a first half-wave plate and a first mid-infrared grid polaroid which are sequentially arranged along a light path of a first laser; a second lens, a second half-wave plate, a second mid-infrared grid polarizer and a third half-wave plate are sequentially arranged along the light path of the second laser; emergent light of the first mid-infrared grid polaroid and the third half-wave plate is converged on different surfaces of the third mid-infrared grid polaroid, the first blazed grating is arranged on a reflection light path of the first mid-infrared grid polaroid, and the second blazed grating is arranged on a reflection light path of the second mid-infrared grid polaroid. According to the invention, the problems of wavelength locking and low polarization beam combination efficiency caused by insufficient polarization state of the quantum cascade laser can be effectively solved, narrow linewidth output and wavelength tuning of the quantum cascade laser can be realized, and even high-power dual-wavelength tunable output can be realized through polarization beam combination structure expansion.

The invention provides an arc-shaped arrangement semiconductor laser light source and a preparation method thereof. The arc-shaped arrangement semiconductor laser light source comprises a plurality of laser chips which are arranged at intervals along a first arc line, each laser chip is provided with a light-emitting surface, the center point of each light-emitting surface is located on the first arc line, and the light-emitting surfaces face the same focal point; and the plurality of driving electrodes are respectively connected with the corresponding laser chips, each driving electrode is used for controlling the corresponding laser chip to emit laser beams from the light-emitting surface according to a control signal loaded by the driving electrode, and the laser beams are converged at a focus.

A light emitting device characterized by comprising: a base portion having a mounting surface; a first light emitting element disposed on the mounting surface and having one or more light reflection members and a first light exit surface facing the one or more light reflection surfaces, the one or more light reflection members providing one or more light reflection surfaces on one virtual plane, the first light emitting element being disposed on the mounting surface with the first light exit surface when viewed from above being at an angle to the one or more light reflection surfaces, light exiting the first light exit surface irradiating the one or more light reflection surfaces; and a second light emitting element which has a second light exit surface facing the one or more light reflection surfaces and which is disposed on the mounting surface with the second light exit surface when viewed from above being at an angle to the first light exit surface, light exiting the second light exit surface irradiating the one or more light reflection surfaces. Light from the first light emitting element that has been reflected by the one or more light reflection surfaces and light from the second light emitting element become closer to each other and then enter a light extraction region of the light emitting device.

Provided is a semiconductor laser diode including multiple active layers and a grating layer. The semiconductor laser diode includes two (or more than two) active layers, a grating layer, and a tunnel junction. The grating layer and the tunnel junction are provided between the two active layers. The tunnel junction is electrically connected to the two active layers, and the two active layers share and are optically coupled to the grating layer, thereby improving the external quantum efficiency and slope efficiency of the semiconductor laser diode.

A spectral linewidth adjusting method includes: adjusting a timing of a first trigger signal for amplifying and converting a portion of a first pulse laser beam to a second pulse laser beam and / or a timing of a second trigger signal for amplifying and converting a portion of second continuous light to a third pulse laser beam and adjusting a spectrum of a fourth pulse laser beam obtained by performing sum-frequency mixing of the second and third pulse laser beams to a first spectrum in a non-Gaussian shape; and modulating a wavelength of the second continuous light within time corresponding to one pulse of the third pulse laser beam and adjusting the spectrum of the fourth pulse laser beam to a second spectrum having a spectral linewidth wider than the first spectrum through generation of a modulation signal for supplying the modulation signal to an optical phase modulator.

The invention provides a red-blue complex coaxial laser device, which comprises an infrared laser, N blue lasers and a beam combiner, the infrared laser is connected with the beam combiner through an infrared transmission optical fiber, and the N blue lasers are respectively connected with the beam combiner through N blue transmission optical fibers; the beam combiner comprises a first incident optical fiber, N second incident optical fibers and a coaxial composite optical fiber, the first incident optical fiber is connected with a fiber core of the coaxial composite optical fiber, and the N second incident optical fibers are connected with an outer cladding of the coaxial composite optical fiber; the infrared light transmission optical fiber is connected with the first incident optical fiber, and the N blue light transmission optical fibers are connected with the N second incident optical fibers in a one-to-one correspondence manner; n is an integer greater than or equal to 1. According to the red and blue complex coaxial laser device, coaxial output of blue light and infrared light can be achieved, transmission energy is high, the machining effect is improved, the structure is simple, and the size is small.

The utility model discloses a tunable laser light source for spectrum sensing, which comprises a tunable DFB laser array chip, a star coupler chip, an SOA array chip and an optical fiber array which are connected through waveguides, tunable lasers in each row are connected through waveguides, the lasers with adjacent wavelengths are distributed on different waveguides, and the optical fiber array is connected with the star coupler chip. The light output end of each waveguide is provided with an SOA. According to the utility model, the star-shaped coupler is adopted to uniformly distribute energy of light with different wavelengths of the tunable laser array to each light output waveguide, and the energy respectively enters different fiber grating sensors or fiber MEMS sensors and the like to realize temperature or strain sensing at the same time and realize multiplexing tree-shaped sensing and demodulation at the same time; the energy loss in the transmission process is reduced; the chips of different material systems are coupled by adopting a photon lead bonding or butt joint growth technology, the photon lead bonding technology does not need high-precision alignment, the processing efficiency is high, low-cost hybrid integration among the chips is realized, and the device is integrally compact.

The invention provides an on-chip integrated laser light source and an optical coupling integration method thereof.The on-chip integrated laser light source comprises a silicon optical substrate and a light source chip assembly integrated on the silicon optical substrate, and the silicon optical substrate comprises an optical signal transmission waveguide; the light source chip assembly comprises a surface-emitting distributed feedback laser chip so as to generate laser beams emitted in the direction perpendicular to the surface of the chip. The on-chip integrated laser light source further comprises a grating coupling structure arranged between the surface emission distributed feedback laser chip and the optical signal transmission waveguide. The light-emitting surface of the surface-emitting distributed feedback laser chip is arranged towards the silicon light substrate, and a laser beam generated by the surface-emitting distributed feedback laser chip is directly projected and coupled into the light signal transmission waveguide through the grating coupling structure; the surface-emitting distributed feedback laser chip is fixedly combined on the silicon optical substrate through a flip chip technology, so that the high-precision end face alignment requirement of the heterogeneous integrated waveguide is converted into high-efficiency grating coupling based on a surface light emitting mode. In this way, harsh end face coupling is converted into efficient grating coupling.