56 results about "External cavity laser" patented technology

The invention relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth wavelength-adjustable external cavity laser based on a planar metal grating, which comprises a gain chip, and the left end face and the right end face of the gain chip are respectively plated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and a second antireflection film and a third antireflection film are plated on the left end face and the right end face of the planar metal grating waveguide respectively; the planar metal grating waveguide comprises a grating waveguide substrate, a ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, a planar metal grating is arranged on the upper portion of the ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 700Hz and M2 less than 0.9 is realized.

The invention relates to the technical field of semiconductor lasers, in particular to an external cavity laser for realizing narrow linewidth through phase difference regulation and control of a bimetallic Bragg grating, which comprises a gain chip, a first high-reflection (HR) film is plated on the left end surface of the gain chip, and a first anti-reflection (AR) film is plated on the right end surface of the gain chip; a metal Bragg grating waveguide is arranged on the right side of the gain chip, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. Tests show that the side mode rejection ratio (SMSR) is increased to 65dB and the line width is compressed to 0.6 kHz by using an interference enhancement effect and a mode suppression mechanism.

There is provided an external cavity laser, including: a photonic integrated platform including a gain chip providing a gain medium and at least one reflector chip, the photonic integrated platform including first and second functional layers made of different materials; a resonant cavity optically coupled to the gain medium and including a first and a second micro-ring resonators (MRR) in a Vernier configuration, the first MRR and second MRR extending within respective ones of the first and second functional layers made of different materials and having corresponding group indices, the first and second MRRs having different radii selected in view of said corresponding group indices; and a tuning mechanism for tuning a spectral response of at least one of the first and second MRR.

The application discloses a kind of photonic-assisted terahertz signal transmission system and method, including the terahertz signal photon generation module, transmission module and photoelectric conversion module connected in turn;The terahertz signal photon generation module is used to generate the optical signal containing terahertz signal;The transmission module is used to transmit the optical signal containing terahertz signal at different distances, and send it into photoelectric conversion module;The photoelectric conversion module is used to convert the received optical signal containing terahertz signal into terahertz signal.Setting a laser realizes multiple multi-band signal generation, avoids using external cavity laser to reduce the phase noise of generated signal, in addition, long-distance transmission is carried out using optical fiber, solve the technical problem that prior art cannot realize long-distance communication.

The invention provides a tunable external cavity laser chip and a preparation method thereof, and relates to the technical field of lasers, the chip comprises a planar optical waveguide loop and a gain chip; a narrow-band transmission peak of a micro-ring resonator and an interference passband of a multi-channel interference module are preliminarily aligned through a phase shifter array and a first micro-ring phase shifter in a planar optical waveguide loop, and selection of a lasing working point is completed; and the common phase shifter and the second micro-ring phase shifter are used for cooperative driving, laser frequency sweeping is carried out on the basis of preliminary alignment, and accurate alignment of a narrow-band transmission peak and an external cavity longitudinal mode is maintained in the whole frequency sweeping process. Through cooperative driving of the common phase shifter and the micro-ring phase shifter, the sweep frequency bandwidth of the laser is increased, and frequent mode hopping of output laser in the tuning process is avoided; meanwhile, the periodic alignment reflection phenomenon in a reflection spectrum is avoided, the utilization rate of the gain interval of the semiconductor gain chip is greatly improved, and a larger tuning range is obtained under the condition that the quality of light beams is kept unchanged.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, the upper part of the substrate is provided with a ridge optical waveguide, and the upper part of the ridge optical waveguide is provided with a metal cover Bragg reflection grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

This invention belongs to the field of communication technology, specifically a millimeter-wave communication and sensing integrated transmission system based on LFM-OFDM signals. The system comprises a transmitter and a receiver. The transmitter mainly includes an input module, an optical modulator, a light source, and a photodetector. The input module generates the information to be modulated; the optical modulator modulates the information to be transmitted onto the sidebands of the optical carrier; an external cavity laser serves as the light source; and the photodetector performs photoelectric conversion. The receiver mainly includes an antenna, a demodulator, and an output module. The antenna receives the millimeter-wave signal and outputs it to the demodulator for demodulation at both the communication and sensing ends; the output module outputs the demodulated information. This system not only enables millimeter-wave band communication and sensing devices but also generates broadband LFM signals, achieving high-resolution sensing and high-speed communication.

The invention discloses a modulation grating Y-branch broadband tuning external cavity laser and equipment. The modulation grating Y-branch broadband tuning external cavity laser comprises a semiconductor optical amplifier (SOA) gain chip area; an outer cavity waveguide region; the semiconductor optical amplifier SOA gain chip area and the outer cavity waveguide area are in coupling connection through the coupling module, and the outer cavity waveguide area comprises a waveguide structure; the Y-branch sampling grating structure is arranged on the surface of the waveguide structure, the Y-branch sampling grating structure is provided with a first sampling grating and a second sampling grating, a chalcogenide phase change material layer is arranged on the surface of the first sampling grating or the second sampling grating, and the chalcogenide phase change material layer comprises a plane part and a convex part which are connected with each other; and the convex part is filled in the groove of the first sampling grating or the second sampling grating. Therefore, rapid and accurate multi-stage wavelength tuning of the external cavity laser can be realized in an extremely short time, and meanwhile, the power consumption of the external cavity laser is effectively reduced.

The invention provides an oil and gas pipeline hydrate generation monitoring system and method based on a phi-OTDR, and belongs to the technical field of pipeline natural gas monitoring. Comprising an external cavity laser, a coupler, an acousto-optic modulator, a first erbium-doped amplifier, a circulator, a to-be-detected optical fiber, a to-be-detected pipeline, a second erbium-doped amplifier, an attenuator, a frequency mixer, an optical detector, a low-pass filter, a data acquisition card and an upper computer. The external cavity laser is connected with the coupler, the coupler is connected with the acousto-optic modulator, the acousto-optic modulator is connected with the first bait-doped amplifier, the first bait-doped amplifier is connected with the circulator, the optical fiber to be measured is tightly laid on the outer wall of a pipeline to be measured, a port of the circulator is connected with the end of the optical fiber to be measured, and the circulator is connected with the second bait-doped amplifier. The second erbium-doped amplifier is connected with the attenuator, the attenuator is connected with the frequency mixer, the frequency mixer is connected with the coupler and the optical detector, the optical detector is connected with the low-pass filter, the low-pass filter is connected with the data acquisition card, and the data acquisition card is connected with the upper computer.

The application relates to the technical field of semiconductor lasers, in particular to a high-performance intracavity laser based on a micro-gain grating region double-side AR plus an inclined angle, which comprises a high-performance intracavity laser based on a micro-gain grating region double-side AR plus an inclined angle, including a substrate layer and a back ridge waveguide; the back ridge waveguide is arranged on the upper end face of the substrate layer; the back ridge waveguide comprises a composite structure grating section located on the left side and a gain region waveguide section located on the right side; an i-layer semiconductor Bragg grating is etched in the composite structure grating section, and i is a natural number; a metal grating electrode is covered on the top of the composite structure grating section; a quantum well layer is arranged in the gain region waveguide section; a gain region electrode is covered on the top of the gain region waveguide section; and an inclined end face is arranged at the left end of the gain region waveguide section. The application overcomes the inherent defects of traditional DBR, DFB and traditional external cavity lasers from the aspects of structure and mechanism.

The invention relates to the technical field of semiconductor lasers, in particular to a high-speed wavelength-adjustable narrow-linewidth external cavity laser which comprises an InP gain chip optical waveguide, the left end face of the InP gain chip optical waveguide is plated with an optical high-reflection film, and the right end face of the InP gain chip optical waveguide is plated with a first optical antireflection film; the left end face of the lithium niobate waveguide is plated with a second optical antireflection film, and the right end face of the lithium niobate waveguide is plated with a third optical antireflection film; a lithium niobate film Bragg grating waveguide is arranged on the upper end face of the lithium niobate waveguide, a SiO2 layer is arranged below the lithium niobate film Bragg grating waveguide, and a Si substrate is arranged below the SiO2 layer; the right end face of the InP gain chip optical waveguide is aligned and attached to the left end face of the lithium niobate waveguide to form an outer cavity structure; a voltage control unit is further arranged on the upper end face of the lithium niobate waveguide. Through the 1-3cm ultra-long grating and mode matching optimization, the advantages of 0.8 kHz line width, 50nm tuning range, light beam quality with M less than 1.2 and device response speed mu s level are realized.

This application provides an external cavity laser and a lidar. The external cavity laser includes an active multimode gain chip and a passive optical chip. The active multimode gain chip and the passive optical chip are coupled together. The active multimode gain chip provides a multimode beam, which is then fed back to a single-mode source and output by the passive optical chip. The lidar includes a light source, a beam splitter, a phased array antenna, and a detection module, and includes the aforementioned external cavity laser. This application solves the technical problem of low power output in external cavity lasers in related technologies, thereby improving the power output of external cavity lasers.

The application relates to the technical field of semiconductor lasers, in particular to a high-speed wavelength-tunable narrow-line-width external cavity laser, which comprises an InP gain chip optical waveguide, the left end face of the InP gain chip optical waveguide is coated with an optical high-reflection film, and the right end face is coated with a first optical antireflection film; further comprising a lithium niobate waveguide, the left end face of the lithium niobate waveguide is coated with a second optical antireflection film, and the right end face is coated with a third optical antireflection film; a lithium niobate thin-film Bragg grating waveguide is arranged on the upper end face of the lithium niobate waveguide, a SiO2 layer is arranged below the lithium niobate thin-film Bragg grating waveguide, and a Si substrate is arranged below the SiO2 layer; the right end face of the InP gain chip optical waveguide is aligned and attached to the left end face of the lithium niobate waveguide, forming an external cavity structure; and a voltage control unit is further arranged on the upper end face of the lithium niobate waveguide. The application realizes 0.8 kHz line width, 50 nm tuning range and M2<1.2 beam quality through 1-3 cm super-long grating and mode matching optimization, and has the advantages of mu s level response speed of the device.

The invention provides a rubidium fountain atomic clock high-stability frequency control light path device and a rubidium fountain atomic clock high-stability frequency control light path method. The rubidium fountain atomic clock high-stability frequency control light path device comprises a main laser part and a re-pumping light part, upper cooling light, lower cooling light and detection light are formed through the main laser part; re-pumping light is formed through the re-pumping light part; the main laser part specifically comprises an ECDL external cavity laser, a 1 / 2 wave plate, a PBS prism, a mechanical switch 3, a reflector, an AOM acoustic optical modulator, a lens, a 1 / 4 wave plate and an optical fiber coupler. The re-pumping light part specifically comprises a DFB laser, a fourth AOM acousto-optic modulator 55, a seventh reflector 56, an eighth reflector 57 and an eighth optical fiber coupler 58, and high-stability laser frequency locking and frequency shifting are achieved through the devices.

The application belongs to the technical field of lasers, and particularly relates to a position adjusting device and method of a resonant cavity mirror of a tunable laser source, which comprises a mirror supporting mechanism and an actuating mechanism located below the mirror supporting mechanism; the mirror supporting mechanism comprises a mirror supporting arm, a cantilever and a mirror supporting plate; the lower end of the mirror supporting arm is connected to one end of the cantilever, the other end of the cantilever is rotationally connected to the actuating mechanism; the upper end of the mirror supporting arm is connected to the mirror supporting plate, and a mirror supporting point is arranged on one side of the mirror supporting plate. The position adjusting device of the resonant cavity mirror of the tunable laser source is designed in a separated mode, the machining difficulty can be reduced, the mirror clamping angle is variable, the resonant state of the resonant mirror can be adjusted, and the problem that the fixed resonant characteristics output realized by the assembly mode of the conventional integrated laser tuning source rotating body and the external cavity laser tuning source cavity body cannot meet the needs of users for various specifications of LM-TLS is solved.

The application relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth tunable wavelength external cavity laser based on a planar metal grating, which comprises a gain chip, the left and right end faces of the gain chip are respectively coated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and the left and right end faces of the planar metal grating waveguide are respectively coated with a second antireflection film and a third antireflection film; the planar metal grating waveguide comprises a grating waveguide substrate, a back ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, a planar metal grating is arranged on the upper portion of the back ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, the application realizes a 3dB linewidth of less than 700Hz and a beam quality of less than 0.9. 2 ​

This paper provides an improved external cavity laser (1) comprising a gain section (2) and an external cavity passive chip (3), the external cavity passive chip having a first end (31) optically coupled to the gain section (2) and a second end (35) providing laser output, the external cavity passive chip (3) having a cavity (33) between the first end (31) and a phase-shifted Bragg grating (FBG) (34).

The invention discloses an external cavity laser, a packaging method thereof and a light quantum computer. The packaging method of the external cavity laser comprises the following steps: reversely conveying a first test light beam to an output light port of the external cavity chip, leading at least one part of the first test light beam out of the external cavity chip by using the light leading-out structure, and coupling the light output assembly and the external cavity chip according to the light power of the light beam led out by the light leading-out structure. And then a second test light beam is emitted to the input light port of the outer cavity chip by using the light source assembly, and the light source assembly and the outer cavity chip are coupled according to the magnitude of the light power output by the light output assembly. The light beam led out by the light leading-out structure does not pass through the external cavity filter, so that the wavelength of the first test light beam is not required, tuning is not needed, and the cost is saved. In the coupling process of the light source assembly, the gain chip is a wide-spectrum light source and still has good optical power output even if passing through the external cavity filter, monitoring is convenient, and the coupling alignment precision can be guaranteed.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, a ridge optical waveguide is arranged on the upper portion of the substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, and a metal cover Bragg reflection grating is arranged on the upper portion of the ridge optical waveguide. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

The invention discloses a vibratory immune external cavity laser based on a self-focusing retroreflector and an implementation method, and belongs to the technical field of semiconductor lasers. The laser comprises a semiconductor laser tube, a first collimating lens, an interference filter, a self-focusing retroreflector and a second collimating lens which are sequentially arranged along a light path. The core of the self-focusing retroreflector is that the self-focusing retroreflector adopts a self-focusing lens with two coated surfaces, an incident surface is coated with an antireflection film, and an emergent surface is coated with a partial reflection film, so that the focusing and optical feedback functions of light beams are integrated into a single element, and a traditional discrete structure of focusing lens and reflector is replaced. Through the integrated design, the number of discrete components and the installation and adjustment difficulty are fundamentally reduced, the mechanical stability and the environmental interference resistance of the laser are remarkably improved, and laser output with stable frequency and narrow line width can be achieved. Optionally, annular or inclined angle annular piezoelectric ceramics can be integrated to realize fine tuning of output wavelength.

This invention discloses an integrated external cavity laser and its usage method, relating to the fields of optical communication and photonic integrated devices. The integrated external cavity laser includes a pump source, a coupling module, and an external cavity module. The coupling module couples the pump light signal output from the pump source to the external cavity module. The external cavity module amplifies the pump light signal and splits it into two paths to adjust the splitting ratio between the two paths. The external cavity module also combines the two split light signals, using part of the combined light signal for output and part for return to be amplified again. This invention provides on-chip gain and increases the output power of the external cavity laser despite the limitations of existing integrated devices.

The utility model discloses a kind of narrow line width on-chip external cavity laser of high-speed tuning and laser radar.It contains gain chip and external cavity chip, external cavity chip includes end face coupler, phase shifter, wavelength selector, directional coupler and spiral resonator;Wherein gain chip and the end face coupler one end of external cavity chip are connected with end face optical coupling, end face coupler other end is connected with directional coupler one end in sequence after phase shifter, wavelength selector, directional coupler and spiral resonator are coupled connection, directional coupler other end connects output waveguide, and laser is exported by output waveguide.The utility model can realize the narrow line width laser output of high-speed tuning, to improve the resolution and detection accuracy of laser radar.

The invention relates to the technical field of optical communication, in particular to a silicon optical chip, an external cavity laser and a method for restraining a micro-ring nonlinear effect. The P-doped region and the N-doped region at the two sides of the micro-ring resonant waveguide are respectively connected with the ground and an input voltage through an electrical connection module, so that a transverse electric field is formed in the micro-ring resonant waveguide, and free carriers generated after light passes through the micro-ring resonant waveguide are removed through the transverse electric field; and on the other hand, the P-doped region and the N-doped region are respectively connected with an external input voltage and the ground through the electrical connection module, so that bias voltage control on the two sides of the micro-ring resonant waveguide can be realized on the basis of not increasing redundant pins, free carriers generated in the micro-ring resonant cavity are eliminated, and the reliability of the micro-ring resonant cavity is improved. Therefore, the nonlinear effect of the micro-ring resonant cavity is effectively suppressed, and the micro-ring resonant cavity has the advantages of being simple in structure and meeting the miniaturization requirement.

The application relates to the technical field of atmospheric optical remote sensing, and discloses a near-infrared laser heterodyne radiometer based on an external cavity laser, which comprises an optical path module and a signal processing module, the optical path module is electrically connected with the signal processing module, the optical path module comprises a sun tracking optical front end, a light chopper, a tunable external cavity laser, a light splitting coupler, a light combining coupler, a variable fiber attenuator and a balanced detector, the signal processing module comprises a band-pass filter, a power detector, a lock-in amplifier and a data acquisition card which are electrically connected in sequence, the data acquisition card is electrically connected with a computer, an RF output end of the balanced detector is electrically connected with an input end of the band-pass filter, the lock-in amplifier is electrically connected with the light chopper to receive a synchronous electric signal output by the light chopper, and the variable fiber attenuator is used for adjusting the reference light power, so that the light powers of a signal light channel and a reference light channel of the balanced detector are balanced, common mode noise suppression is realized.

The invention relates to the technical field of semiconductor lasers, in particular to a wavelength-adjustable external cavity laser based on a metal grating PZT film, which comprises a laser gain chip. The PZT thin film optical waveguide is arranged on the left side of the laser gain chip and abuts against the left end face of the laser gain chip; the HR high reflection film is plated on the left end face of the PZT thin film optical waveguide; the AR anti-reflection film is plated on the right end surface of the laser gain chip; the TEC temperature control module is arranged at the bottom of the laser gain chip and the PZT thin film optical waveguide; the PZT thin film optical waveguide comprises a Si substrate, a SiO2 bottom layer is arranged on the upper end face of the Si substrate, a PZT thin film is arranged in the middle of the upper end face of the SiO2 bottom layer, a metal grating is etched on the upper end face of the PZT thin film, a SiO2 wrapping layer is arranged on the metal grating, a positive electrode is plated on the upper end face of the SiO2 wrapping layer, and a negative electrode is plated on the lower end face of the Si substrate. The invention has the following beneficial effects: 1, the advantages of the PZT film optical waveguide; and 2, the end face of the light path is jointed and linked.

The application provides a waveguide external cavity laser, comprising: a gain chip for generating a light source; a passive external cavity chip for providing narrow-band feedback, comprising a mode spot converter, a grating and a waveguide, the gain chip being coupled with the grating via the mode spot converter; the waveguide being used for transmitting an optical signal; the grating being located at the side of the waveguide and comprising periodically arranged etching structures, the gratings on both sides of the waveguide being arranged in a staggered manner. Compared with the prior art, the application provides an integrated asymmetric side-coupling grating external cavity narrow-line-width semiconductor laser, which can output light of a specified wavelength without electrical tuning, the tuning of which only needs one control loop and meets the application requirement of kilohertz-level line width. In addition, while meeting the requirements of high side mode suppression ratio and narrow-line-width laser output, the size of the structure processed by the application is relatively large, the processing can be completed by using a low-process technology, and therefore the processing cost is lower.

There is provided an external cavity laser comprising: a photonic integration platform comprising a gain chip providing a gain medium and at least one reflector chip, the photonic integration platform comprising a first functional layer and a second functional layer made of different materials; a resonant cavity optically coupled to the gain medium and including first and second microring resonators (MRRs) in a vernier configuration, the first and second MRRs extending within respective ones of the first and second functional layers made of different materials and having respective group refractive indices, the first MRR and the second MRR have different radii selected according to the respective group refractive indexes; and a tuning mechanism for tuning a spectral response of at least one of the first MRR and the second MRR.

The application discloses a three-beam fiber laser external cavity spectrum synthesis method with reduced spectrum interval, which comprises the following steps: firstly, two doped fiber arrays are used to form a resonant cavity among a front cavity mirror, a transform lens, a blazed grating and an output coupling mirror, and a laser oscillation method is used to synthesize a beam containing wavelengths of lambda 1 and lambda 2; secondly, a reflector Bragg grating with a spectrum selectivity less than delta lambda = lambda 2 - lambda 1 is connected in series in the two-beam laser external cavity spectrum synthesis system; finally, a third doped fiber array is used to form an external cavity laser system among a front cavity mirror, the reflector Bragg grating and an output coupling mirror, and a wavelength of lambda 0 of a beam output by the array is incident on the reflector Bragg grating at a Bragg angle, and a diffracted beam of the reflector Bragg grating is coaxially transmitted with the synthesized beam containing the wavelengths of lambda 1 and lambda 2, so that the three-beam laser external cavity spectrum synthesis with a reduced spectrum interval is realized. The application further discloses a three-beam fiber laser external cavity spectrum synthesis system with a reduced spectrum interval.

The application discloses a chip-level Faraday anomalous dispersion atomic optical filter and a use method thereof, and belongs to the field of quantum precision measurement and laser technology. In order to solve the problems of low integration and poor regulation and control of the existing device, the first high borosilicate cover plate wafer, the MEMS gas chamber wafer, the second high borosilicate cover plate wafer and the MEMS scanning mirror wafer are vertically stacked and packaged, the annular magnet film, the ITO heating plating layer, the embedded thermal resistance and the wire grid polarization plating layer are integrated, and the angle and position adjustment are realized by utilizing the MEMS actuator to drive the second wire grid polarization plating layer. The application is mainly used for narrow linewidth frequency selection and frequency locking of an external cavity laser, and has the beneficial effects of small size, low power consumption, active feedback adjustment and batch production.

This application provides an external cavity laser and a lidar. The external cavity laser includes a laser driving modulation circuit, an active gain chip, and a silicon-based external cavity optical chip. The laser driving modulation circuit provides a laser driving signal and a modulation signal to the active gain chip. The active gain chip generates a laser beam based on the laser driving signal and modulates the laser beam based on the modulation signal to form a frequency-modulated laser beam, which is then provided to the silicon-based external cavity optical chip. This application solves the problem in related technologies where external cavity lasers cannot meet the modulation rate requirements of FMCW lidar, thereby improving the compatibility between external cavity lasers and FMCW lidar.