82 results about "External cavity laser" patented technology

The invention relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth wavelength-adjustable external cavity laser based on a planar metal grating, which comprises a gain chip, and the left end face and the right end face of the gain chip are respectively plated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and a second antireflection film and a third antireflection film are plated on the left end face and the right end face of the planar metal grating waveguide respectively; the planar metal grating waveguide comprises a grating waveguide substrate, a ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, a planar metal grating is arranged on the upper portion of the ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 700Hz and M2 less than 0.9 is realized.

The invention relates to the technical field of semiconductor lasers, in particular to an external cavity laser for realizing narrow linewidth through phase difference regulation and control of a bimetallic Bragg grating, which comprises a gain chip, a first high-reflection (HR) film is plated on the left end surface of the gain chip, and a first anti-reflection (AR) film is plated on the right end surface of the gain chip; a metal Bragg grating waveguide is arranged on the right side of the gain chip, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. Tests show that the side mode rejection ratio (SMSR) is increased to 65dB and the line width is compressed to 0.6 kHz by using an interference enhancement effect and a mode suppression mechanism.

The invention relates to an optical radiation source. It is an object of the invention to enable the generation of laser radiation with (ultra) narrow linewidth and to provide an optical radiation source which is robust and simple to control. The optical radiation source of the invention comprises: a laser source having a gain medium and an internal cavity configured to generate laser radiation at multiple frequencies separated by a first free spectral range, at least one external cavity in optical communication with the laser source, the external cavity having a plurality of resonance modes within the gain bandwidth of the laser source, wherein the resonance modes are separated by a second free spectral range which is different from the first free spectral range, wherein the external cavity is configured to act as a frequency-selective reflector to selectively reflect laser radiation generated by the laser source back into the gain medium, thereby causing the gain medium to lase predominantly at only one frequency, and wherein the optical radiation source is configured to couple a portion of the generated laser radiation out from the internal cavity and / or from the external cavity.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, the upper part of the substrate is provided with a ridge optical waveguide, and the upper part of the ridge optical waveguide is provided with a metal cover Bragg reflection grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

The invention relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth wavelength-adjustable external cavity laser based on a planar metal grating, which comprises a gain chip, and the left end face and the right end face of the gain chip are respectively plated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and a second antireflection film and a third antireflection film are plated on the left end face and the right end face of the planar metal grating waveguide respectively; the planar metal grating waveguide comprises a grating waveguide substrate, a ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, a planar metal grating is arranged on the upper portion of the ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 700Hz and M2 less than 0.9 is realized.

There is provided an external cavity laser, including: a photonic integrated platform including a gain chip providing a gain medium and at least one reflector chip, the photonic integrated platform including first and second functional layers made of different materials; a resonant cavity optically coupled to the gain medium and including a first and a second micro-ring resonators (MRR) in a Vernier configuration, the first MRR and second MRR extending within respective ones of the first and second functional layers made of different materials and having corresponding group indices, the first and second MRRs having different radii selected in view of said corresponding group indices; and a tuning mechanism for tuning a spectral response of at least one of the first and second MRR.

The application discloses a kind of photonic-assisted terahertz signal transmission system and method, including the terahertz signal photon generation module, transmission module and photoelectric conversion module connected in turn;The terahertz signal photon generation module is used to generate the optical signal containing terahertz signal;The transmission module is used to transmit the optical signal containing terahertz signal at different distances, and send it into photoelectric conversion module;The photoelectric conversion module is used to convert the received optical signal containing terahertz signal into terahertz signal.Setting a laser realizes multiple multi-band signal generation, avoids using external cavity laser to reduce the phase noise of generated signal, in addition, long-distance transmission is carried out using optical fiber, solve the technical problem that prior art cannot realize long-distance communication.

The invention relates to the technical field of semiconductor lasers, in particular to an external cavity laser for realizing narrow linewidth through phase difference regulation and control of a bimetallic Bragg grating, which comprises a gain chip, a first high-reflection (HR) film is plated on the left end surface of the gain chip, and a first anti-reflection (AR) film is plated on the right end surface of the gain chip; a metal Bragg grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. Tests show that the side mode rejection ratio (SMSR) is increased to 65dB and the line width is compressed to 0.6 kHz by using an interference enhancement effect and a mode suppression mechanism.

This invention relates to a high-power narrow-linewidth laser with weak feedback in an external cavity, comprising: a sub-source output section for outputting a sub-source; a laser output section for outputting narrow-linewidth laser light; an isolator disposed between the sub-source output section and the laser output section; a multilayer reflective film assembly deposited on the input end of the isolator or on the output end of the sub-source output section for filtering the sub-source to form transmitted light and feedback light; the rear end of the isolator outputs the transmitted light to the laser output section as narrow-linewidth laser output; the sub-source output section also receives the feedback light to achieve self-injection locking, possessing the advantages of high-power narrow-linewidth laser output, simple structure, low cost, simple process, relatively small packaging size, and ease of laser packaging.

The invention provides a tunable external cavity laser chip and a preparation method thereof, and relates to the technical field of lasers, the chip comprises a planar optical waveguide loop and a gain chip; a narrow-band transmission peak of a micro-ring resonator and an interference passband of a multi-channel interference module are preliminarily aligned through a phase shifter array and a first micro-ring phase shifter in a planar optical waveguide loop, and selection of a lasing working point is completed; and the common phase shifter and the second micro-ring phase shifter are used for cooperative driving, laser frequency sweeping is carried out on the basis of preliminary alignment, and accurate alignment of a narrow-band transmission peak and an external cavity longitudinal mode is maintained in the whole frequency sweeping process. Through cooperative driving of the common phase shifter and the micro-ring phase shifter, the sweep frequency bandwidth of the laser is increased, and frequent mode hopping of output laser in the tuning process is avoided; meanwhile, the periodic alignment reflection phenomenon in a reflection spectrum is avoided, the utilization rate of the gain interval of the semiconductor gain chip is greatly improved, and a larger tuning range is obtained under the condition that the quality of light beams is kept unchanged.

The application provides a device and a method for realizing PON rate adjustment based on Polar modulation, and relates to the technical field of passive optical networks.The device comprises a first external cavity laser, a second external cavity laser, a dual-polarization phase quadrature modulator, an arbitrary waveform generator, an erbium-doped fiber amplifier, a single-mode optical fiber, a variable optical attenuator, a coherent receiver and an oscilloscope.The method comprises the following steps: dynamically adjusting the number of information bits A, splicing check bits to form total information bits, optimizing the distribution of information bits and frozen bits according to the optical signal channel sorting result, performing polar encoding on the signal at the encoding end, and mapping the signal into a 16QAM code symbol sequence by using the Polar modulation technology; at the receiving end, calculating the LLR, calculating the path metric value of all paths and performing a pruning operation when the list width reaches a set value, and detecting the L candidate paths by using the CRC check after the decoding is completed.The application realizes flexible regulation and control of the transmission rate of different optical network units.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, the upper part of the substrate is provided with a ridge optical waveguide, and the upper part of the ridge optical waveguide is provided with a metal cover Bragg reflection grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

This invention belongs to the field of communication technology, specifically a millimeter-wave communication and sensing integrated transmission system based on LFM-OFDM signals. The system comprises a transmitter and a receiver. The transmitter mainly includes an input module, an optical modulator, a light source, and a photodetector. The input module generates the information to be modulated; the optical modulator modulates the information to be transmitted onto the sidebands of the optical carrier; an external cavity laser serves as the light source; and the photodetector performs photoelectric conversion. The receiver mainly includes an antenna, a demodulator, and an output module. The antenna receives the millimeter-wave signal and outputs it to the demodulator for demodulation at both the communication and sensing ends; the output module outputs the demodulated information. This system not only enables millimeter-wave band communication and sensing devices but also generates broadband LFM signals, achieving high-resolution sensing and high-speed communication.

The invention discloses a modulation grating Y-branch broadband tuning external cavity laser and equipment. The modulation grating Y-branch broadband tuning external cavity laser comprises a semiconductor optical amplifier (SOA) gain chip area; an outer cavity waveguide region; the semiconductor optical amplifier SOA gain chip area and the outer cavity waveguide area are in coupling connection through the coupling module, and the outer cavity waveguide area comprises a waveguide structure; the Y-branch sampling grating structure is arranged on the surface of the waveguide structure, the Y-branch sampling grating structure is provided with a first sampling grating and a second sampling grating, a chalcogenide phase change material layer is arranged on the surface of the first sampling grating or the second sampling grating, and the chalcogenide phase change material layer comprises a plane part and a convex part which are connected with each other; and the convex part is filled in the groove of the first sampling grating or the second sampling grating. Therefore, rapid and accurate multi-stage wavelength tuning of the external cavity laser can be realized in an extremely short time, and meanwhile, the power consumption of the external cavity laser is effectively reduced.

The invention provides an oil and gas pipeline hydrate generation monitoring system and method based on a phi-OTDR, and belongs to the technical field of pipeline natural gas monitoring. Comprising an external cavity laser, a coupler, an acousto-optic modulator, a first erbium-doped amplifier, a circulator, a to-be-detected optical fiber, a to-be-detected pipeline, a second erbium-doped amplifier, an attenuator, a frequency mixer, an optical detector, a low-pass filter, a data acquisition card and an upper computer. The external cavity laser is connected with the coupler, the coupler is connected with the acousto-optic modulator, the acousto-optic modulator is connected with the first bait-doped amplifier, the first bait-doped amplifier is connected with the circulator, the optical fiber to be measured is tightly laid on the outer wall of a pipeline to be measured, a port of the circulator is connected with the end of the optical fiber to be measured, and the circulator is connected with the second bait-doped amplifier. The second erbium-doped amplifier is connected with the attenuator, the attenuator is connected with the frequency mixer, the frequency mixer is connected with the coupler and the optical detector, the optical detector is connected with the low-pass filter, the low-pass filter is connected with the data acquisition card, and the data acquisition card is connected with the upper computer.

To provide an external resonant laser module capable of improving yield, and a method of manufacturing the same.SOLUTION: A laser module 1 includes a QCL element 2, a diffraction grating unit 5, lens holders 7A and 7B, and a mount member 4. A fourth mounting portion 44 of the mount member 4 is provided with a placement hole 44b into which a protruding portion 53c of the diffraction grating unit 5 is inserted. The placement hole 44b is longer than the protruding portion 53c so that the protruding portion 53c can be slid in an X-axis direction relative to the placement hole 44b. A wall surface 43c for positioning the diffraction grating unit 5 is provided between a third mounting portion 43 and the fourth mounting portion 44. The diffraction grating unit 5 has a positioning surface 53d facing the wall surface 43c. The diffraction grating unit 5 is fixed to the fourth mounting portion 44 in a state where the protruding portion 53c is inserted into the placement hole 44b and the positioning surface 53d is in surface contact with the wall surface 43c.SELECTED DRAWING: Figure 8

Disclosed is a refractive index sensor that includes a reference laser and a RI sensitive laser wherein the reference and RI sensitive lasers have reference and sensing oscillating frequencies respectively. The reference laser is configured to maintain the oscillating frequency at a constant value, upon exposure of the refractive index senor to an input sample, and the RI sensitive laser has the sensing oscillating frequency that varies based on a refractive index of the input sample, upon exposure to the input sample. The reference laser and RI sensitive lasers generate reference and sensing signals, and a photodiode receives and combines the reference and sensing signals to generate a combined signal that has a beat frequency proportional to the refractive index of the input sample. A computing unit determines the refractive index of the input sample based on the beat frequency.

The application relates to the technical field of semiconductor lasers, in particular to a high-performance intracavity laser based on a micro-gain grating region double-side AR plus an inclined angle, which comprises a high-performance intracavity laser based on a micro-gain grating region double-side AR plus an inclined angle, including a substrate layer and a back ridge waveguide; the back ridge waveguide is arranged on the upper end face of the substrate layer; the back ridge waveguide comprises a composite structure grating section located on the left side and a gain region waveguide section located on the right side; an i-layer semiconductor Bragg grating is etched in the composite structure grating section, and i is a natural number; a metal grating electrode is covered on the top of the composite structure grating section; a quantum well layer is arranged in the gain region waveguide section; a gain region electrode is covered on the top of the gain region waveguide section; and an inclined end face is arranged at the left end of the gain region waveguide section. The application overcomes the inherent defects of traditional DBR, DFB and traditional external cavity lasers from the aspects of structure and mechanism.

The invention relates to the technical field of semiconductor lasers, in particular to a high-speed wavelength-adjustable narrow-linewidth external cavity laser which comprises an InP gain chip optical waveguide, the left end face of the InP gain chip optical waveguide is plated with an optical high-reflection film, and the right end face of the InP gain chip optical waveguide is plated with a first optical antireflection film; the left end face of the lithium niobate waveguide is plated with a second optical antireflection film, and the right end face of the lithium niobate waveguide is plated with a third optical antireflection film; a lithium niobate film Bragg grating waveguide is arranged on the upper end face of the lithium niobate waveguide, a SiO2 layer is arranged below the lithium niobate film Bragg grating waveguide, and a Si substrate is arranged below the SiO2 layer; the right end face of the InP gain chip optical waveguide is aligned and attached to the left end face of the lithium niobate waveguide to form an outer cavity structure; a voltage control unit is further arranged on the upper end face of the lithium niobate waveguide. Through the 1-3cm ultra-long grating and mode matching optimization, the advantages of 0.8 kHz line width, 50nm tuning range, light beam quality with M less than 1.2 and device response speed mu s level are realized.

This application provides an external cavity laser and a lidar. The external cavity laser includes an active multimode gain chip and a passive optical chip. The active multimode gain chip and the passive optical chip are coupled together. The active multimode gain chip provides a multimode beam, which is then fed back to a single-mode source and output by the passive optical chip. The lidar includes a light source, a beam splitter, a phased array antenna, and a detection module, and includes the aforementioned external cavity laser. This application solves the technical problem of low power output in external cavity lasers in related technologies, thereby improving the power output of external cavity lasers.

The application relates to the technical field of semiconductor lasers, in particular to a high-speed wavelength-tunable narrow-line-width external cavity laser, which comprises an InP gain chip optical waveguide, the left end face of the InP gain chip optical waveguide is coated with an optical high-reflection film, and the right end face is coated with a first optical antireflection film; further comprising a lithium niobate waveguide, the left end face of the lithium niobate waveguide is coated with a second optical antireflection film, and the right end face is coated with a third optical antireflection film; a lithium niobate thin-film Bragg grating waveguide is arranged on the upper end face of the lithium niobate waveguide, a SiO2 layer is arranged below the lithium niobate thin-film Bragg grating waveguide, and a Si substrate is arranged below the SiO2 layer; the right end face of the InP gain chip optical waveguide is aligned and attached to the left end face of the lithium niobate waveguide, forming an external cavity structure; and a voltage control unit is further arranged on the upper end face of the lithium niobate waveguide. The application realizes 0.8 kHz line width, 50 nm tuning range and M2<1.2 beam quality through 1-3 cm super-long grating and mode matching optimization, and has the advantages of mu s level response speed of the device.

The invention provides a rubidium fountain atomic clock high-stability frequency control light path device and a rubidium fountain atomic clock high-stability frequency control light path method. The rubidium fountain atomic clock high-stability frequency control light path device comprises a main laser part and a re-pumping light part, upper cooling light, lower cooling light and detection light are formed through the main laser part; re-pumping light is formed through the re-pumping light part; the main laser part specifically comprises an ECDL external cavity laser, a 1 / 2 wave plate, a PBS prism, a mechanical switch 3, a reflector, an AOM acoustic optical modulator, a lens, a 1 / 4 wave plate and an optical fiber coupler. The re-pumping light part specifically comprises a DFB laser, a fourth AOM acousto-optic modulator 55, a seventh reflector 56, an eighth reflector 57 and an eighth optical fiber coupler 58, and high-stability laser frequency locking and frequency shifting are achieved through the devices.

The application belongs to the technical field of lasers, and particularly relates to a position adjusting device and method of a resonant cavity mirror of a tunable laser source, which comprises a mirror supporting mechanism and an actuating mechanism located below the mirror supporting mechanism; the mirror supporting mechanism comprises a mirror supporting arm, a cantilever and a mirror supporting plate; the lower end of the mirror supporting arm is connected to one end of the cantilever, the other end of the cantilever is rotationally connected to the actuating mechanism; the upper end of the mirror supporting arm is connected to the mirror supporting plate, and a mirror supporting point is arranged on one side of the mirror supporting plate. The position adjusting device of the resonant cavity mirror of the tunable laser source is designed in a separated mode, the machining difficulty can be reduced, the mirror clamping angle is variable, the resonant state of the resonant mirror can be adjusted, and the problem that the fixed resonant characteristics output realized by the assembly mode of the conventional integrated laser tuning source rotating body and the external cavity laser tuning source cavity body cannot meet the needs of users for various specifications of LM-TLS is solved.

The application relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth tunable wavelength external cavity laser based on a planar metal grating, which comprises a gain chip, the left and right end faces of the gain chip are respectively coated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and the left and right end faces of the planar metal grating waveguide are respectively coated with a second antireflection film and a third antireflection film; the planar metal grating waveguide comprises a grating waveguide substrate, a back ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, a planar metal grating is arranged on the upper portion of the back ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, the application realizes a 3dB linewidth of less than 700Hz and a beam quality of less than 0.9. 2 ​

An optical terminator includes a first termination waveguide. The first termination waveguide includes a curved waveguide and a curved waveguide. The curved waveguide includes only one maximum curvature portion. The curved waveguide includes only one maximum curvature portion. A first normal vector of the curved waveguide at the maximum curvature portion and a second normal vector of the curved waveguide at the maximum curvature portion are oriented in the same direction.

The invention discloses a fast tuning external cavity laser based on lead zirconate titanate. The photoelectric conversion device comprises a first gain chip and a lead zirconate titanate second chip, and the lead zirconate titanate second chip comprises an end face coupler, a phase shifter, an optical switch structure and a vernier resonator structure. Wherein the first gain chip is in end face optical coupling connection with one end of an end face coupler of the lead zirconate titanate second chip, the other end of the end face coupler sequentially passes through the phase shifter and the optical switch structure and then is connected with one end of the vernier resonator structure, the other end of the vernier resonator structure is connected with the output waveguide, and laser is output through the output waveguide; and each part in the lead zirconate titanate second chip adopts an optical waveguide structure, and a core layer in the optical waveguide structure adopts a lead zirconate titanate material. The external cavity laser structure capable of being tuned rapidly is achieved, rapid and large-range tuning can be achieved, high-power and high-side-mode-rejection-ratio laser output is achieved, and the external cavity laser structure has the advantages of being simple and convenient in process, compact in structure and the like.

This paper provides an improved external cavity laser (1) comprising a gain section (2) and an external cavity passive chip (3), the external cavity passive chip having a first end (31) optically coupled to the gain section (2) and a second end (35) providing laser output, the external cavity passive chip (3) having a cavity (33) between the first end (31) and a phase-shifted Bragg grating (FBG) (34).

The invention discloses an external cavity laser, a packaging method thereof and a light quantum computer. The packaging method of the external cavity laser comprises the following steps: reversely conveying a first test light beam to an output light port of the external cavity chip, leading at least one part of the first test light beam out of the external cavity chip by using the light leading-out structure, and coupling the light output assembly and the external cavity chip according to the light power of the light beam led out by the light leading-out structure. And then a second test light beam is emitted to the input light port of the outer cavity chip by using the light source assembly, and the light source assembly and the outer cavity chip are coupled according to the magnitude of the light power output by the light output assembly. The light beam led out by the light leading-out structure does not pass through the external cavity filter, so that the wavelength of the first test light beam is not required, tuning is not needed, and the cost is saved. In the coupling process of the light source assembly, the gain chip is a wide-spectrum light source and still has good optical power output even if passing through the external cavity filter, monitoring is convenient, and the coupling alignment precision can be guaranteed.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, a ridge optical waveguide is arranged on the upper portion of the substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, and a metal cover Bragg reflection grating is arranged on the upper portion of the ridge optical waveguide. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

The invention discloses a vibratory immune external cavity laser based on a self-focusing retroreflector and an implementation method, and belongs to the technical field of semiconductor lasers. The laser comprises a semiconductor laser tube, a first collimating lens, an interference filter, a self-focusing retroreflector and a second collimating lens which are sequentially arranged along a light path. The core of the self-focusing retroreflector is that the self-focusing retroreflector adopts a self-focusing lens with two coated surfaces, an incident surface is coated with an antireflection film, and an emergent surface is coated with a partial reflection film, so that the focusing and optical feedback functions of light beams are integrated into a single element, and a traditional discrete structure of focusing lens and reflector is replaced. Through the integrated design, the number of discrete components and the installation and adjustment difficulty are fundamentally reduced, the mechanical stability and the environmental interference resistance of the laser are remarkably improved, and laser output with stable frequency and narrow line width can be achieved. Optionally, annular or inclined angle annular piezoelectric ceramics can be integrated to realize fine tuning of output wavelength.