306 results about "Optical modulator" patented technology

Disclosed herein is an optical frequency comb generator for a distributed acoustic anomaly detection system. The system can include a continuous wave frequency modulated laser source configured to generate a laser signal. The system can include an acousto-optical modulator configured to modulate the laser signal by altering an amplitude and / or frequency of the laser signal based on an RF drive signal applied to the AOM, and to output an optical pulse with multiple frequency sidebands based on the modulation. The output can form an optical frequency comb usable detecting and locating acoustic anomalies within a structure under observation.

The invention relates to the technical field of laser light source measurement, and discloses a wide-range narrow-linewidth laser wavelength and linewidth measurement system, which can be flexibly matched with the center frequency of laser to be measured through the arrangement of a tunable laser, breaks through the strict limitation of the existing beat frequency method on the center frequency, effectively expands the measurement range, and improves the measurement accuracy. By combining the synergistic effect of the absorption cell and the locking loop, the system stability is improved, the measurement precision of narrow linewidth laser is guaranteed, the integration time can be flexibly adapted without tedious adjustment of a delay optical path or change of parameters of acquisition equipment through the cooperation of the optical modulator and the delay optical fiber, the problem of inconsistent measurement resolution under different integration time is avoided, and the measurement accuracy is improved. And the accuracy of short-time measurement is obviously improved. The system integrates wavelength and line width measurement functions, can measure line width, center wavelength and long-time frequency stability of to-be-measured laser, is reasonable in structural design, retains the advantage of high precision of a beat frequency method, overcomes the defects that an existing method is narrow in measurement range and inconvenient to adjust integral time, and improves the measurement accuracy of the to-be-measured laser. And the measurement requirements of wide-range and narrow-linewidth laser are met.

The utility model provides a laser ablation device which comprises a first laser light source used for emitting treatment laser; the optical splitter is arranged at the output end of the first laser light source and is used for splitting the treatment laser into multiple paths of split laser; wherein the branch lasers are arranged in rows and columns; the optical modulator is arranged at the output end of the optical splitter and is used for performing independent power regulation and control on each branch laser; the optical fiber coupler is arranged at the output end of the optical modulator and is used for coupling the branch lasers into the optical fiber branches of the optical fiber array one by one; the optical fiber array is connected between the optical fiber coupler and the focusing micro-lens array, and each optical fiber branch corresponds to one focusing micro-lens of the focusing micro-lens array; and the focusing microlens array is used for focusing the split laser onto the diseased tissue in space through focusing microlenses for ablation treatment. The technical scheme can be used for ablation treatment of various irregular pathological tissues, and damage to surrounding healthy tissues is avoided.

The present disclosure provides an optical modulating structure. The optical modulating structure includes a lower member extending along an insulating layer, a first protrusion over the lower member, and a second protrusion over the lower member and separated from the first protrusion. A first mask layer is formed over the optical modulating structure, wherein the first mask layer covers the second protrusion and a first portion of the lower member between the first protrusion and the second protrusion. A first doping region is formed in an exposed portion of the lower member and at least a portion of an exposed sidewall of the first protrusion. A dielectric layer is formed between the first protrusion and the second protrusion. A method for manufacturing the optical modulating structure is also provided.

An optical device includes: a second light source configured to emit laser light having a wavelength different from that of measurement light emitted from a first light source; a light splitter; a first mirror configured to add a first modulation signal to the measurement light and add a displacement signal to the laser light; a second mirror configured to reflect a second beam of the measurement light; a first color separator configured to separate the second beam of the measurement light from a second laser light beam based on a difference in wavelength; an optical modulator driven based on a drive signal and configured to add a second modulation signal to the second laser light beam after the separation; a first photodetector configured to receive the measurement light including a sample-derived signal and the first modulation signal; and a second photodetector configured to receive the laser light including the displacement signal and the second modulation signal.

The invention relates to the technical field of integrated photoelectron and electro-optical modulation, in particular to a thin-film lithium niobate electro-optical modulator structure and a preparation method of the thin-film lithium niobate electro-optical modulator structure. The buried layer is located on the upper surface of the substrate; the partially-etched thin film lithium niobate layer comprises a partially-etched thin film lithium niobate flat plate layer and a thin film lithium niobate ridge waveguide, the partially-etched thin film lithium niobate flat plate layer is located on the upper surface of the buried layer and exposes a part of the buried layer, and the thin film lithium niobate ridge waveguide is located on the partially-etched thin film lithium niobate flat plate layer; the partially-etched buffer layer is located on the partially-etched thin film lithium niobate layer, and the side wall of the partially-etched thin film lithium niobate flat plate layer is exposed; and the metal electrode is in electric contact with the side wall of the partially etched thin film lithium niobate flat plate layer. Therefore, the problems of low-frequency modulation waveform distortion, direct-current bias point drift and the like caused by electro-optical relaxation and electric field shielding of a related thin-film lithium niobate electro-optical modulator are solved.

A waveguide for an optical modulator system includes multiple tapered portions, or regions, designed to couple a CMBH laser light source to a ridge modulator. Using a waveguide with different tapered portions, transmission efficiency between the CMBH light source and the ridge modulator is improved, thus allowing the optical modulator to be used in high-speed applications. Waveguide described herein may include tapered portions in which, along a single direction, include one portion that tapers to a reduced width while another portion tapers to an increased width.

A photonic random access memory employs series connected photosensors to define switching nodes driving optical modulators, the series connection operating to reduce the effect of photosensor dark current.

A waveguide structure and an optical modulator structure of a photonic integrated circuit are formed in a dielectric region above a substrate of a semiconductor device. Openings are then formed through the dielectric region and to the substrate so that material can be removed from the substrate to form air gaps between the substrate and the dielectric region. The openings are then sealed by depositing dielectric material in the openings. Sealing the openings reduces the likelihood of exposure of the dielectric region and other regions of the semiconductor device to exposure to environmental elements such as humidity and oxygen. The reduced likelihood of exposure to these environmental elements, due to sealing the openings, may reduce the likelihood and / or rate of formation of defects in the dielectric region and the other regions of the semiconductor device.

Photonics integrated circuits having a backside waveguide and modulator integrated using a deep via are provided. In one aspect, a semiconductor device includes: a photonics integrated circuit having an optical waveguide and an optical modulator on a frontside of the semiconductor device, where the optical waveguide and the optical modulator have flat bottom surfaces facing a backside of the semiconductor device; and contacts including deep vias that connect a top surface of the optical modulator to the backside of the semiconductor device. Alternatively, the optical waveguide and the optical modulator can have flat top surfaces facing the frontside of the semiconductor device. A method of forming the present semiconductor devices is also provided.

Some embodiments are directed to a transparent substrate for an optical modulator. The light modulator has an optical layer. The transparent substrate has at least one electrode system applied to the substrate. The electrode system includes a stack of a substrate-side electrode, an energy conversion layer, and an optical layer-side electrode. The optical layer-side electrode is arranged for modulating an electric field in the optical layer. The energy conversion layer is configured to convert energy outside the substrate and a voltage difference between the substrate-side electrode and the optical layer-side electrode.

The present invention makes it easier to ensure that the relation between a second cladding layer and an optical waveguide material layer is as designed. This method for manufacturing an optical modulator (1) comprises a first substrate forming step and a bonding step. In the first substrate forming step, a first substrate (100) is formed. The first substrate (100) includes: a second cladding layer (7) having a planar main surface (701); and a support substrate (10). The first substrate (100) has a planar main surface (111). In the bonding step, a second substrate (200) is prepared, the second substrate (200) having a first main surface (211) and a planar second main surface (212), and in which an optical waveguide material that serves as the basis of an optical waveguide material layer (20) including an optical waveguide (2) is exposed on the second main surface (212), the main surface (111) of the first substrate (100) and the second main surface (212) of the second substrate (200) are arranged to face one another, and then the first substrate (100) and the second substrate (200) are bonded together.

The embodiment of the invention provides an optical modulator, a wavelength selection switch, a port-level optical switch, an optical cross connection and an optical communication system, and aims to reduce insertion loss in an optical switching process. In the optical modulator provided by the invention, an included angle is formed between a first surface of a first substrate and a second surface of a second substrate, and a liquid crystal layer is located between the first substrate and the second substrate, so that an included angle is formed between an incident light beam of a signal light beam irradiating the optical modulator and an emergent light beam emitted from the optical modulator; the first substrate is provided with a first electrode layer, the second substrate is provided with a second electrode layer, the refractive index of the liquid crystal layer is changed by adjusting the first electrode layer and the second electrode layer to generate electric fields with different intensities, the included angle between the incident light beam and the emergent light beam is further adjusted, and the signal light beam is emitted to a target output port; deflection of the signal light beams is achieved through the refraction principle, the insertion loss of the signal light beams in the optical modulator is reduced, and then the insertion loss in the optical switching process is reduced.

To provide an optical modulator capable of reducing electrical loss while suppressing an increase in size.SOLUTION: The optical modulation device (100) includes optical waveguides (1), first electrodes (2R, 2L), second electrodes (3), and first wiring electrodes (4OR, 4OL). The first electrodes (2R, 2L) are arranged on one side in a height direction (HD) with respect to the optical waveguides (1) and extend along a part of the optical waveguides (1). The second electrode (3) is disposed on the other side in the height direction of the optical modulator (100) with respect to the optical waveguide (1). The first wiring electrodes (40 R, 40 L) are disposed on the side opposite to the optical waveguide (1) with respect to the first electrodes (2R, 2L) in the height direction (HD) of the optical modulator (100) and are electrically connected to the first electrodes (2R, 2L). The first line electrodes (4OR, 4OL) include line portions disposed so as to be drawn out from end portions in the extending direction of the first electrodes (2R, 2L) when viewed along the height direction (HD).SELECTED DRAWING: Figure 2A

A laser interferometer includes: a laser light source configured to emit first laser light; an optical modulator including a vibration element that generates a vibration component in a direction intersecting an incident surface of the first laser light, and configured to modulate the first laser light by using the vibration element to generate second laser light including a modulation signal; a photodetector configured to receive the second laser light and third laser light that includes a sample signal generated by the first laser light being reflected by an object, and output a light reception signal; a demodulation circuit configured to demodulate the sample signal from the light reception signal based on a reference signal; and an oscillation circuit configured to operate using the vibration element as a signal source and output the reference signal to the demodulation circuit.

A laser interferometer includes: a laser light source configured to emit first laser light; an optical modulator including a vibration element and configured to modulate the first laser light using the vibration element and generate second laser light including a modulation signal; a light receiving element configured to receive third laser light including a sample signal generated by the first laser light being reflected by an object and the second laser light, and output a light reception signal; a demodulation circuit configured to demodulate the sample signal from the light reception signal; and a correction circuit configured to detect a force acting on the vibration element from a change in vibration of the vibration element and correct the light reception signal based on the force.

This optical modulator includes a light absorbing layer (102) formed on a substrate (101). The light absorbing layer (102) is formed in a core shape extending in a predetermined direction on the substrate (101). The light absorbing layer (102) has a multiple quantum well structure made of a compound semiconductor. The multiple quantum well structure of the light absorbing layer (102) gradually changes such that the photoluminescence wavelength of the light absorbing layer (102) gradually increases from the light incident side toward the light emission side. The spacing between the photoluminescence wavelength on the light incident side and that on the light emission side of the light absorbing layer (102) can be 10 nm or more.

This application relates to the field of optical technology and discloses an optical component. A beam splitter assembly intersects with a first optical path. The beam splitter assembly includes a first beam splitter and a second beam splitter. The first beam splitter intersects with a first beam to transmit a first split beam from the first beam. The second beam splitter intersects with a second beam to transmit a second split beam from the second beam. An optical modulator intersects with the first and second beam splitters to modulate their phase. Lens assemblies are respectively disposed on a second and a third optical path to amplify and rotate the first split beam before projecting it onto a first region to form a first pattern. Lens assemblies amplify and rotate the second split beam before projecting it onto a second region to form a second pattern. The horizontal resolution of the first and second patterns is greater than their vertical resolution. The first and second patterns combine to form an elongated image. This provides an optical component and a head-up display system for improving horizontal resolution and image size.

An illumination optical system is configured to convert an intensity distribution of incident light in a long axis direction from a Gaussian distribution, to thereby bring an intensity distribution of a shaped beam on a modulation surface of an optical modulator in the long axis direction into a top hat distribution, and to guide the incident light to the optical modulator as parallel light in the long axis direction and as convergent light in the short axis direction. A short axis side light shielding part is disposed at a condensing position on a short axis side of a modulated beam which is emitted from the optical modulator and is convergent light on a short axis side and blocks a non-zero-order diffracted beam on the short axis side of the modulated beam.

The invention discloses a laser decoherence and holographic display speckle noise suppression system and method based on controllable fog scattering. The system comprises a laser light source module, an optical shaping module, a fog scattering module and a holographic display module which are arranged in sequence. The fog scattering module generates a scattering medium layer composed of micron-sized fog drops in an ultrasonic atomization or airflow disturbance mode, so that the space and time coherence of the collimated laser is reduced under the action of multiple times of scattering, and therefore speckle noise in holographic display imaging is effectively restrained. By adjusting the particle size distribution, the concentration and the disturbance frequency of the fog drops, continuous controllability of the decoherence intensity can be achieved, and the imaging brightness and the imaging definition are both considered. The system is simple in structure and high in compatibility, and can be directly embedded into an existing computer-generated holographic display system without an additional optical modulation device; and meanwhile, the method has the advantages of low cost, high real-time performance, suitability for a multiband laser system and the like, and is suitable for the optical fields of holographic display, laser projection, interference measurement and the like.

Some embodiments relate to an electrophoretic optical modulator with asymmetric electrode driving. An alternating current signal is applied to a plurality of electrodes on at least two substrates, resulting in an electric field between the substrates. The amplitude of the alternating current signal is modulated, resulting in a low electric field region moving relative to the electrodes.

An optical semiconductor device includes: a substrate; an optical modulator including a semiconductor layer having a first conductivity type layer, an absorbing layer and a second conductivity type layer which are formed in this order on the substrate, a first electrode connected to the first conductivity type layer, and a second electrode connected to the second conductivity type layer; a first pad connected to the first electrode; and a second pad connected to the second electrode, wherein the semiconductor layer includes a waveguide, a first terrace and a second terrace positioned on opposite sides with respect to the waveguide, the first pad and the second pad are placed on the first terrace via an insulating film, and the first conductivity type layer is removed in the first terrace between the first pad and the second pad.

The invention discloses an ultra-wideband weak signal detection method and system based on all-optical oscillation and phase-amplitude conversion. The method comprises the steps that spontaneous radiation light generated by an erbium-doped optical fiber amplifier is used as an optical carrier; modulating a weak radio frequency signal to be measured received by an antenna to the optical carrier through an optical modulator to form a modulated optical signal; the modulated optical signal is injected into an all-optical oscillation circuit composed of double loops, the all-optical oscillation circuit generates multimode optical oscillation by adjusting an optical attenuator, and the all-optical oscillation circuit comprises a double-loop interference structure; performing phase-amplitude conversion by adjusting the delay difference of the two light paths in the double loops to form an equivalent microwave photon filter so as to select and amplify the modulated light signal corresponding to the radio frequency signal of the set frequency band; and converting the selected and amplified modulated optical signal into an electric signal, and performing spectral analysis to detect the weak radio frequency signal to be detected.

The invention discloses an optical modulator, an optical signal modulation method and electronic equipment, and belongs to the technical field of silicon-based optoelectronic integrated chips. The optical modulator comprises a single-mode bus waveguide, the input end of the single-mode bus waveguide is used for receiving incident light in a first mode, and the output end of the single-mode bus waveguide is used for outputting output light in the first mode; the front resonant cavity waveguide is provided with an antisymmetric grating structure and is used for exciting the incident light in the first mode into forward light in a second mode and converting the forward light in the second mode and backward light in a third mode; and the rear resonant cavity waveguide is provided with an antisymmetric grating structure, is cascaded with the front resonant cavity waveguide and is used for influencing the resonance distribution state of the optical signals transmitted in the front resonant cavity waveguide by adjusting the phase of the optical signals transmitted in the rear resonant cavity waveguide so as to realize the modulation of the output light of the single-mode bus waveguide.

A temperature strain separable dynamic and static combined measurement distributed optical fiber sensing system, comprising: laser, optical modulator, radio frequency signal generator, optical filter, DFB laser, polarization controller, first acoustooptic modulator, depolarizer, erbium-doped fiber amplifier, two optical circulators, optical wavelength division multiplexer, receiving module, signal acquisition and processing module are arranged in sequence, the application carries out temperature sensing to the back Raman scattering light of the pulse while receiving the Rayleigh scattering light of the detection pulse, and controls the time interval of adjacent pump pulse and detection pulse to carry out three-bit pulse coding and decoding, so that the back Raman scattering signals of individual pulse in pulse pair are separated in time, and finally the simultaneous measurement of dynamic variable (vibration) and static variable (temperature, static strain) is realized and the spatial resolution of measurement is ensured not to be lost.

An optical semiconductor device includes: a substrate; an optical modulator including a semiconductor layer having a first conductive type layer, an absorbing layer and a second conductive type layer which are formed in this order on the substrate, a first electrode connected to the first conductive type layer, and a second electrode connected to the second conductive type layer; a first pad connected to the first electrode; and a second pad connected to the second electrode, wherein the semiconductor layer includes a waveguide, a first terrace and a second terrace positioned on the opposite sides with respect to the waveguide, the first pad and the second pad are placed on the first terrace via an insulating film, and a groove is formed in the semiconductor layer between the first pad and the second pad.

There are provided: a light source to generate a laser beam; an optical modulator to superimpose a communication signal on the laser beam; an OHPA to amplify the laser beam; a collimator including a fiber connector and a collimator lens to convert the laser beam amplified into spatial light, and emit the spatial light; an optical telescope to enlarge a beam width of the spatial light and emit the spatial light to a spatial transmission path; a drive mechanism capable of adjusting a focal length of the collimator lens; and a drive controller to determine a drive amount of the drive mechanism in such a manner that a product of a free space loss calculated from a distance between the spatial optical communication transceiver and a spatial optical communication transceiver and a transmission gain determined by a beam spread angle of the spatial light is constant.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

A first optical port of vapour cell 1 receives a probe laser beam which leaves the cell via a second optical port. A first portion of the emerging probe beam is directed to optical modulator 3 which a

The present application provides a kind of optical modulator, even in the case where signal electrode traverses light branch part or light synthesis part, the degradation of transmission characteristic is inhibited.An optical modulator is constituted by forming optical waveguide and modulation electrode for modulating optical wave propagating in the optical waveguide on substrate, and housing the substrate in the housing, characterized in that the optical waveguide at least has light branch part for branching one optical wave into two or light synthesis part for synthesizing two optical waves into one, the modulation electrode has signal electrode and ground electrode, and part of the signal electrode is configured to traverse the light branch part or the light synthesis part, the optical modulator is provided with suppression unit (for example, resin layer) for suppressing the change of intensity ratio of optical wave branched in the light branch part or intensity ratio of optical wave synthesized in the light synthesis part due to the signal electrode traversing the light branch part or the light synthesis part.