589 results about "Optical modulator" patented technology

An optical device includes: a first optical system; and a second optical system. The first optical system includes a first light splitting device configured to split measurement light emitted from a first light source into a first measurement light and a second measurement light and then mix the split measurement light, a first mirror configured to add a first modulation signal by being moved in an entering direction of the first measurement light and reflecting the first measurement light, a second mirror configured to reflect the second measurement light, and a first light receiving device configured to receive the measurement light including a sample-derived signal and the first modulation signal and output a first light receiving signal. The second optical system includes a second light source configured to emit laser light, an optical modulator configured to add a second modulation signal to the laser light, and a second light receiving device configured to receive the laser light including a displacement signal generated by reflection on the first mirror and the second modulation signal and output a second light receiving signal.

Disclosed herein is an optical frequency comb generator for a distributed acoustic anomaly detection system. The system can include a continuous wave frequency modulated laser source configured to generate a laser signal. The system can include an acousto-optical modulator configured to modulate the laser signal by altering an amplitude and / or frequency of the laser signal based on an RF drive signal applied to the AOM, and to output an optical pulse with multiple frequency sidebands based on the modulation. The output can form an optical frequency comb usable detecting and locating acoustic anomalies within a structure under observation.

An optical computation system includes a light source configured to produce a pump beam, an optical modulator configured to modulate the pump beam based on the modulation mask to generate a modulated beam, a non-linear medium configured to convert a portion of the modulated beam to a second harmonic (SH) beam and to produce an output including the SH beam and an unconverted portion of the pump beam, and a dichroic mirror configured to receive the output of the non-linear medium and to decouple the SH beam and the unconverted portion of the pump beam, a detector configured to detect a first optical power of the unconverted portion of the pump beam and to detect a second optical power of the SH beam, and a controller configured to generate an updated modulation mask based on the first and second optical powers for transmission to the optical modulator.

The invention relates to the field of performance testing of high-precision fiber-optic gyroscopes, and discloses an automatic testing method and system for the extinction ratio of a high-precision fiber-optic gyroscope, and the method comprises the following steps: constructing a signal light path and a reference light path, and combining the output light of the signal light path and the reference light path into a combined light signal in an orthogonal polarization state; integrally measuring the extinction ratio of the combined optical signal by using an extinction ratio tester to obtain a measured value; the control unit compares the measured value with a target value of 0dB and generates a control instruction based on a difference value; the voltage controller automatically adjusts the voltage of the integrated optical modulator in the signal light path according to the instruction, and iterative optimization is carried out through closed-loop feedback until the actually measured extinction ratio reaches a target value; and finally recording and solidifying the optimal voltage value. According to the invention, single and accurate extinction ratio overall measurement is used for replacing two times of error-prone independent optical power measurement, full-automatic closed-loop control is realized, the precision, efficiency and consistency of optical power balance are remarkably improved, and the skill requirements on operators are reduced.

An interface for an optical modulator and the optical modulator are described. The interface includes first and second differential line pairs. The first differential line pair has a first negative line and a first positive line arranged on opposing sides of a first waveguide. The first negative line is on a distal side of the first waveguide relative to a second waveguide. The first positive line is on a proximal side of the first waveguide relative to the second waveguide. The second differential line pair has a second negative line and a second positive line arranged on opposing sides of the second waveguide. The second negative line is on a distal side of the second waveguide relative to the first waveguide. The second positive line is on a proximal side of the second waveguide relative to the first waveguide. The first and second waveguides each include lithium niobate and / or lithium tantalate.

The invention relates to the technical field of laser light source measurement, and discloses a wide-range narrow-linewidth laser wavelength and linewidth measurement system, which can be flexibly matched with the center frequency of laser to be measured through the arrangement of a tunable laser, breaks through the strict limitation of the existing beat frequency method on the center frequency, effectively expands the measurement range, and improves the measurement accuracy. By combining the synergistic effect of the absorption cell and the locking loop, the system stability is improved, the measurement precision of narrow linewidth laser is guaranteed, the integration time can be flexibly adapted without tedious adjustment of a delay optical path or change of parameters of acquisition equipment through the cooperation of the optical modulator and the delay optical fiber, the problem of inconsistent measurement resolution under different integration time is avoided, and the measurement accuracy is improved. And the accuracy of short-time measurement is obviously improved. The system integrates wavelength and line width measurement functions, can measure line width, center wavelength and long-time frequency stability of to-be-measured laser, is reasonable in structural design, retains the advantage of high precision of a beat frequency method, overcomes the defects that an existing method is narrow in measurement range and inconvenient to adjust integral time, and improves the measurement accuracy of the to-be-measured laser. And the measurement requirements of wide-range and narrow-linewidth laser are met.

Improvements in and relating to Photonics An optical switch for receiving an optical signal from an optical signal source and for outputting the optical signal comprises an optical router configured for routing the optical signal conditional on the detection of a single photon. The optical router comprises and optical resonator, a first optical pathway part comprising the optical resonator, and a second optical pathway part. An optical input coupling part receives the optical signal for coupling the received optical signal into the first optical pathway part and into the second optical pathway part. An optical modulator coupled to a single-photon detector unit outputs a detection signal in response to the detection of a single photon. The optical modulator is configured, in response to the detection signal, to modulate the refractive index of the optical resonator to change an optical phase shift incurred by the optical signal upon passage through the optical resonator such that an optical interference results in a routing of the output optical signal to one of the first and second optical pathway parts selected conditional on the detection of a single photon.

The invention discloses a femtosecond optical comb large-size precision absolute distance measurement system in a complex environment. Comprising a source module, a beam splitter, a third dichroic mirror, a fundamental frequency femtosecond optical comb reference detector, a frequency doubling femtosecond optical comb reference detector, a fourth dichroic mirror, a frequency doubling femtosecond optical comb measurement detector, a fundamental frequency femtosecond optical comb measurement detector, a phase discriminator, a ranging zero point mirror and a corner reflector. The source module comprises an atomic clock, a femtosecond optical comb, an optical fiber beam splitter, a signal generator, an electro-optical modulator, a lens, a frequency multiplication module, a first collimation beam expander, a second collimation beam expander, a first dichroic mirror and a second dichroic mirror. According to the scheme, the defects that in the prior art, the measurement range is insufficient, complex industrial sites are difficult to adapt, and the real-time performance is poor are overcome, and a new way is provided for breaking through the technical bottleneck of large-range, high-precision, dead-zone-free, rapid and real-time measurement in a complex environment; and a technical support is provided for engineering application of a femtosecond optical comb precision distance measurement technology and development of a subsequent measurement prototype.

The utility model relates to the technical field of optical fiber communication, and discloses a polarization equalization transmitting assembly based on a coherent light silicon optical chip, which adopts a second optical splitter with an adjustable splitting ratio to split input continuous light and equalizes output light power of two paths of coherent light of X polarized light and Y polarized light. The two paths of coherent light of X polarized light and Y polarized light can be pre-adjusted only by adjusting the splitting ratio of the second optical splitter, optical power balance is achieved, high-speed electro-optical modulators in the two paths of coherent light do not need to be adjusted, the high-speed electro-optical modulators can be kept in the optimal state, an adjustable optical attenuator does not need to be additionally arranged in the two paths of coherent light, and the optical power balance is achieved. The utility model has the effects of improving the output power of the transmitting assembly, reducing the self power consumption of the transmitting assembly and improving the utilization efficiency of the high-speed photoelectric driver, and is more suitable for a small-sized packaged coherent optical module based on a coherent optical silicon optical chip.

An optical modulator includes a substrate defining a plane and first, second, and third PN junctions formed on the substrate. The first PN junction is formed on the substrate by a first region doped with a p-type doping abutting a second region doped with an n-type doping. The second PN junction is formed on the substrate adjacent to the second region of the first PN junction. The third PN junction is formed on the substrate adjacent to the first region of the first PN junction.

The present invention addresses the problem of providing: a composition and a polymer compound which are each capable of suppressing aggregation of a dye that has a nonlinear optical effect in a nonlinear optical material, and exhibiting a higher electro-optic effect with respect to the absorbance after poling; a nonlinear optical element which is obtained using the composition; and an optical modulator which comprises the nonlinear optical element and operates on the basis of an electro-optic effect. The present invention pertains to a composition which contains a compound represented by formula (1) and a compound represented by formula (3), wherein the content of the compound represented by formula (3) is 0.0001 mol% to 25 mol% inclusive relative to the total content of the compound represented by formula (1) and the compound represented by formula (3).　(Definitions of groups are as set forth in the description.)

The application relates to a packaging structure and a packaging method of an optical module and an optical chip, wherein the packaging structure comprises a receiving end assembly, a stepped metal heat sink and a silicon-based optical interconnection assembly attached to the stepped metal heat sink; the silicon-based optical interconnection assembly comprises a laser, a silicon optical beam splitter, a lens group, a light-transmitting compensation gasket, a silicon optical modulator and a fiber array; the laser and the silicon optical beam splitter form a coplanar coupling; the silicon optical beam splitter and at least part of the collimating lenses in the lens group are fixed on the light-transmitting compensation gasket; the fiber array and the silicon optical modulator realize waveguide matching through an active coupling mode; the silicon optical modulator and the receiving end assembly are arranged at a distance of at least a preset interval, and the fiber array and / or the receiving end assembly are covered with a metal isolation cover. The application solves the yield bottleneck caused by high cost of multiple light sources, pollution of an open light path and low reliability of glue in the prior art, and finally forms a packaging scheme with compact structure, stable process and high productivity.

A semiconductor device includes: a first section in a semiconductor substrate and configured to allow an optical signal to propagate; a second section including a first doped region and a third doped region, and configured as a first end to receive a modulating signal; a third section including the second doped region and a fourth doped region, and configured as a second end to receive the modulating signal; a fourth section, including a first height less than that of the first section and the second section, and arranged between the first section and the second section, the fourth section being an undoped region; and a fifth section immediately adjacent to the fourth section, the fifth section including a second height less than that of the first section and the second section, the fifth section arranged between the first section and the second section.

The utility model provides a laser ablation device which comprises a first laser light source used for emitting treatment laser; the optical splitter is arranged at the output end of the first laser light source and is used for splitting the treatment laser into multiple paths of split laser; wherein the branch lasers are arranged in rows and columns; the optical modulator is arranged at the output end of the optical splitter and is used for performing independent power regulation and control on each branch laser; the optical fiber coupler is arranged at the output end of the optical modulator and is used for coupling the branch lasers into the optical fiber branches of the optical fiber array one by one; the optical fiber array is connected between the optical fiber coupler and the focusing micro-lens array, and each optical fiber branch corresponds to one focusing micro-lens of the focusing micro-lens array; and the focusing microlens array is used for focusing the split laser onto the diseased tissue in space through focusing microlenses for ablation treatment. The technical scheme can be used for ablation treatment of various irregular pathological tissues, and damage to surrounding healthy tissues is avoided.

The present disclosure provides an optical modulating structure. The optical modulating structure includes a lower member extending along an insulating layer, a first protrusion over the lower member, and a second protrusion over the lower member and separated from the first protrusion. A first mask layer is formed over the optical modulating structure, wherein the first mask layer covers the second protrusion and a first portion of the lower member between the first protrusion and the second protrusion. A first doping region is formed in an exposed portion of the lower member and at least a portion of an exposed sidewall of the first protrusion. A dielectric layer is formed between the first protrusion and the second protrusion. A method for manufacturing the optical modulating structure is also provided.

An optical modulator, including: a substrate; a plurality of electro-optic material layers formed on the substrate; and an electrode formed on the electro-optic material layer; wherein the electro-optic material layer has a patterned RF portion waveguide that applies a modulated signal and a patterned DC portion waveguide that applies a direct current bias signal; and on a section perpendicular to a light propagation direction, the sectional area of the DC portion waveguide is greater than the sectional area of the RF portion waveguide.

An optical device includes: a second light source configured to emit laser light having a wavelength different from that of measurement light emitted from a first light source; a light splitter; a first mirror configured to add a first modulation signal to the measurement light and add a displacement signal to the laser light; a second mirror configured to reflect a second beam of the measurement light; a first color separator configured to separate the second beam of the measurement light from a second laser light beam based on a difference in wavelength; an optical modulator driven based on a drive signal and configured to add a second modulation signal to the second laser light beam after the separation; a first photodetector configured to receive the measurement light including a sample-derived signal and the first modulation signal; and a second photodetector configured to receive the laser light including the displacement signal and the second modulation signal.

The invention relates to the technical field of integrated photoelectron and electro-optical modulation, in particular to a thin-film lithium niobate electro-optical modulator structure and a preparation method of the thin-film lithium niobate electro-optical modulator structure. The buried layer is located on the upper surface of the substrate; the partially-etched thin film lithium niobate layer comprises a partially-etched thin film lithium niobate flat plate layer and a thin film lithium niobate ridge waveguide, the partially-etched thin film lithium niobate flat plate layer is located on the upper surface of the buried layer and exposes a part of the buried layer, and the thin film lithium niobate ridge waveguide is located on the partially-etched thin film lithium niobate flat plate layer; the partially-etched buffer layer is located on the partially-etched thin film lithium niobate layer, and the side wall of the partially-etched thin film lithium niobate flat plate layer is exposed; and the metal electrode is in electric contact with the side wall of the partially etched thin film lithium niobate flat plate layer. Therefore, the problems of low-frequency modulation waveform distortion, direct-current bias point drift and the like caused by electro-optical relaxation and electric field shielding of a related thin-film lithium niobate electro-optical modulator are solved.

Embodiments of the present application provide an optical device, a board, and an optical network. The optical device comprises optical modules, and can effectively reduce the power consumption of the optical modules and reduce the heat-dissipation difficulty of the optical modules. The optical device comprises a forwarding module, N processing modules, and M optical modules, where N and M are each any integer greater than 1. The forwarding module is connected to each of the N processing modules. The N processing modules comprise a target processing module, and the M optical modules comprise a target optical module. The target optical module comprises an optical modulator, and the optical modulator is connected to the target processing module via a first physical link, or, the target optical module comprises an optical detector, and the optical detector is connected to the target processing module via a second physical link.

The invention discloses a rapid prototyping preparation method for a GeTe-based phase change light modulator. According to the invention, the GeTe material is used as the phase change layer and also used as the photoresist, and the patterning treatment of the phase change material layer is synchronously completed through the exposure and development treatment of the GeTe material, so that the technological process is simplified, and the traditional gluing and stripping steps are not needed; the steps of gluing, baking and the like of the photoresist layer are reduced, the damage of temperature accumulation of the whole device to the phase change layer is reduced, the precision of the whole structure is improved, and the polarization sensitivity is improved. Meanwhile, the preparation process is optimized by taking the GeTe material as the phase change layer and the photoetching layer, and high-precision pattern transfer with the minimum cd of 200nm is realized.

A non-interferometric thin film lithium niobate electro-optical modulator for data transmission including a laser, configured to generate an input continuous wave light beam; a non-interferometric thin film lithium niobate modulator including an optical waveguide situated along with the coplanar transmission lines and the DC bias conductors. The propagation constant of the optical waveguide is tuned and modulated by the RF data signal and the DC bias voltage traveling on the coplanar transmission lines and the DC bias conductors. The modulator can be tuned at quadrature point by the DC bias voltage. The optical power can be modulated by the RF data signal travelling on the coplanar transmission line; a low noise RF amplifier for data signal amplification; and a bias tee for combining the data signal and DC bias voltage and send them to the coplanar transmission lines.

A waveguide for an optical modulator system includes multiple tapered portions, or regions, designed to couple a CMBH laser light source to a ridge modulator. Using a waveguide with different tapered portions, transmission efficiency between the CMBH light source and the ridge modulator is improved, thus allowing the optical modulator to be used in high-speed applications. Waveguide described herein may include tapered portions in which, along a single direction, include one portion that tapers to a reduced width while another portion tapers to an increased width.

The application discloses a vertical micro-mirror structure optical computing chip and a wafer-level intelligent manufacturing method thereof, and relates to the field of optical computing chips.The optical computing chip comprises a plurality of optical modulators and a plurality of quantum logic gates, and the optical modulators are provided with interference light paths based on vertical micro-mirrors, so that optical modulation is realized; the quantum logic gates construct stable light paths through the mirrors provided by the vertical micro-mirrors, realize interference by means of a beam splitter, and perform Hadamard transformation by a wave plate at the entrance or exit of a target light path, so that optical computing is realized; a deep-groove beam splitter or a deep-wall beam splitter is used as the beam splitter, the silicon walls in the deep-wall beam splitter are provided with a predetermined included angle perpendicular to the two side walls of the substrate, and the deep-groove beam splitter is manufactured in the following manner: a deep groove pattern is photoetched on the surface of a single-crystal silicon wafer; the deep groove with the predetermined angle is etched by deep etching and the side walls are smoothed; an optical thin film is deposited in the deep groove; the shape of the deep-groove beam splitter is photoetched and etched by deep etching, and the side walls are smoothed; and an optical antireflection film is grown on the vertical side walls.

The present application provides a composite waveguide structure and a preparation method thereof, belonging to the technical field of electro-optical modulators, comprising a first waveguide wafer, including a substrate, a SiO2 film, a first metal electrode, a first waveguide structure, a second metal electrode and a groove; the second metal electrode is connected to the first metal electrode through a metal interconnection through-hole, the second metal electrode is also connected to a thermal adjustment structure, a pad hole is provided above the second metal electrode, and the bottom of the groove is located above the first waveguide structure in the area to be bonded; the electro-optical film comprises a SiO2 film, a waveguide boss and a second waveguide structure, the waveguide boss and the second waveguide structure are located in the groove, the second waveguide structure is bonded to the bottom of the groove, a bonding reserved hole is provided on the SiO2 film, the position of which corresponds to the position of the pad hole, and the material of the second waveguide structure is an electro-optical material. The present application scheme improves the process structure compatibility between the bonding area and the non-bonding area, and the CMOS process compatibility of W2W in heterogeneous integration applications.

A photonic random access memory employs series connected photosensors to define switching nodes driving optical modulators, the series connection operating to reduce the effect of photosensor dark current.

A waveguide structure and an optical modulator structure of a photonic integrated circuit are formed in a dielectric region above a substrate of a semiconductor device. Openings are then formed through the dielectric region and to the substrate so that material can be removed from the substrate to form air gaps between the substrate and the dielectric region. The openings are then sealed by depositing dielectric material in the openings. Sealing the openings reduces the likelihood of exposure of the dielectric region and other regions of the semiconductor device to exposure to environmental elements such as humidity and oxygen. The reduced likelihood of exposure to these environmental elements, due to sealing the openings, may reduce the likelihood and / or rate of formation of defects in the dielectric region and the other regions of the semiconductor device.

Photonics integrated circuits having a backside waveguide and modulator integrated using a deep via are provided. In one aspect, a semiconductor device includes: a photonics integrated circuit having an optical waveguide and an optical modulator on a frontside of the semiconductor device, where the optical waveguide and the optical modulator have flat bottom surfaces facing a backside of the semiconductor device; and contacts including deep vias that connect a top surface of the optical modulator to the backside of the semiconductor device. Alternatively, the optical waveguide and the optical modulator can have flat top surfaces facing the frontside of the semiconductor device. A method of forming the present semiconductor devices is also provided.

The present disclosure provides an optical modulator capable of improving flatness of a surface of a resin portion. This optical modulator is provided with: a substrate; a first Mach-Zehnder modulation unit including a first semiconductor mesa portion provided on the substrate, a first mesa waveguide provided on the first semiconductor mesa portion, and a second mesa waveguide provided on the first semiconductor mesa portion; a second Mach-Zehnder modulation unit including a second semiconductor mesa portion provided on the substrate, a third mesa waveguide provided on the second semiconductor mesa portion, and a fourth mesa waveguide provided on the second semiconductor mesa portion; at least one protrusion provided on a bottom surface of a groove formed between the first semiconductor mesa portion and the second semiconductor mesa portion on the substrate; and a resin part which is provided in the groove and embeds the at least one protruding part.

Some embodiments are directed to a transparent substrate for an optical modulator. The light modulator has an optical layer. The transparent substrate has at least one electrode system applied to the substrate. The electrode system includes a stack of a substrate-side electrode, an energy conversion layer, and an optical layer-side electrode. The optical layer-side electrode is arranged for modulating an electric field in the optical layer. The energy conversion layer is configured to convert energy outside the substrate and a voltage difference between the substrate-side electrode and the optical layer-side electrode.