36 results about "Rib waveguides" patented technology

An optical device is disclosed which includes a single-mode waveguide (700) which supports a first optical mode in a first region and a second optical mode in a second region. The waveguide includes a guiding layer (703) having at least one wing (750) extended outwardly from the guiding layer (703). The guiding layer (703) may desirably have a rib waveguide (706, 707) cross sectional shape at the wings. The wings (750) decrease in width along the length of the guiding layer to convert a rib waveguide mode at the wings to a channel waveguide mode.

High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

A method and system for multi-mode integrated receivers are disclosed and may include receiving an optical signal from an optical fiber coupled to a chip comprising a photonic circuit. The photonic circuit may comprise an optical coupler, one or more multi-mode optical waveguides, and a detector. The received optical signal may be coupled to a plurality of optical modes in the one or more multi-mode optical waveguides, which are communicated to a detector to generate an electrical signal from the communicated modes. The optical coupler may comprise a grating coupler. The chip may comprise a CMOS chip, and the optical fiber may comprise a single-mode or a multi-mode fiber. The detector may comprise a germanium or silicon-germanium photodiode, and / or a waveguide detector. The optical fiber may be coupled to a top surface of the chip and the multi-mode optical waveguides may comprise rib waveguides.

A method and system for waveguide mode filters are disclosed and may include processing optical signals of a fundamental mode and higher-order modes by filtering the higher-order modes in rib waveguides in a photonic chip. The higher-order modes may be filtered utilizing doped regions and / or patterns in one or more slab sections in the rib waveguides. The patterns may be periodic or aperiodic along the rib waveguides. The higher-order modes may be filtered utilizing varying widths of slab sections, or doped, patterned, and / or salicided ridges on the slab sections in the rib waveguides. The higher-order modes may be attenuated by scattering and / or absorbing the modes. The chip may comprise a CMOS photonic chip.

A structure comprises an inner strip waveguide (1) and an outer rib waveguide (2) on a common substrate. The thicker inner waveguide (1) is patterned into an inner core layer (3). The thinner outer waveguide (2) is patterned into an outer core layer (4). The inner and outer waveguides are separated by a gap (5) being less than 500 nm. The structure forms an adiabatic coupler. In the method, the first (inner) waveguide (1) is patterned into the thicker inner core layer (3) by etching trenches (8). A thinner outer silicon layer (4) is attached on top of the inner-core layer (3) and the first waveguide (1) to form an outer core layer (4). The second (outer) waveguide (2) is patterned into the outer core layer (4).

In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

The invention discloses an electro-optical modulator using ribbed waveguides. An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

Provided are a polarization beam splitter and an optical device with high productivity. A polarization beam splitter (PBS) according to an exemplary embodiment of the present invention includes: a demultiplexer (11) that is formed of a rib waveguide (50) and demultiplexes input light into first input light and second input light; a multiplexer (14) that is formed of the rib waveguide (50) and multiplexes the first input light and the second input light that are obtained by demultiplexing the input light by the demultiplexer (11); a first arm waveguide (12) that is formed of a channel waveguide (51) and guides the first input light to the multiplexer (11); and a second arm waveguide (13) that is formed of the channel waveguide (51), generates a phase difference in the first input light propagating through the first arm waveguide, and guides the second input light to the multiplexer (14).

An optical waveguide device includes a substrate; a lower cladding disposed on the substrate; a rib waveguide including a slab disposed on the lower cladding and a single rib disposed on the slab contiguous to the slab; and an upper cladding disposed on the rib waveguide. The rib waveguide includes a first doped region having a first electric conductivity exhibiting a P-type electric conductivity across the rib and the slab and a second doped region being contiguous to the first doped region and having a second electric conductivity exhibiting an N-type electric conductivity across the rib and the slab.

The invention discloses an optoelectronic device which includes a rib waveguide, the rib waveguide including a ridge portion, incorporating a temperature-sensitive optically active region. The rib waveguide further includes a slab portion, which is positioned adjacent to the ridge portion. The device further includes a heater, which is disposed on top of the slab portion. The part of the heater closest to ridge portion is at least 2 micrometres away from the ridge portion. The device may also have a heater provided in an epitaxial crystalline cladding. In other embodiments the device also includes a bottom cladding layer, and may also include various thermal insulation enhancing cavities.