64 results about "Electro-optic modulator" patented technology

This disclosure provides a signal monitoring method and apparatus, electronic devices, computer-readable storage media, and computer program products applicable to an electro-optic modulator. The signal monitoring method includes inputting a modulated voltage signal to the modulation circuit of an electro-optic modulator, the modulated voltage signal being obtained by superimposing a carrier voltage signal and a pulse voltage signal, wherein the amplitude of the carrier voltage signal is greater than the half-wavelength voltage Vpi of the electro-optic modulator and the amplitude of the pulse voltage signal is less than the peak-to-peak value Vpp of the carrier voltage signal; obtaining a photoelectric conversion detection signal corresponding to the output optical signal of the electro-optic modulator; and monitoring the presence of the pulse voltage signal in the modulated voltage signal based on the photoelectric conversion detection signal.

This invention discloses a method and system for measuring the frequency response of an electro-optic modulator based on a spectral analyzer. The system includes a laser, a 95:5 single-mode fiber splitter, an optical power meter, an electro-optic modulator, a control power supply, an RF signal generator, and a spectral analyzer. The measurement method includes the following steps: calculating a calibration factor to correct optical power drift through optical path splitting, driving the modulator by applying several discrete single-frequency RF points, and measuring the carrier power P0(f) using the spectral analyzer. i ) and the first-order sideband power P1(f i ), and determined by the power ratio R(f) i )=10 (P1‑P0) / 10 Combining the Jacobi–Anger expansion / Bessel function relation, the phase modulation index β(f) is solved by inverse solution. i Then, the phase transfer function H(f) at each frequency point is calculated and fitted. i The continuous frequency response S of the modulator is obtained. 21 This invention simplifies the testing process, reduces reliance on high-speed photodetectors and vector network analyzers, and enables high-precision electro-optic response testing of electro-optic modulators at high frequencies.

This application provides an electro-optic modulator chip, a packaging structure, and an electronic device, relating to the field of optical communication technology. The electro-optic modulator chip includes: a first end connected to an input light source, and a second end connected to an output light source and a monitoring end; the input light source is used to transmit an input optical signal to the electro-optic modulator; the electro-optic modulator modulates the input optical signal to obtain a modulated optical signal and a monitoring optical signal, and transmits the modulated optical signal to the output light source and the monitoring optical signal to the monitoring end; the output light source is used to output the modulated optical signal; the monitoring end is used to output the monitoring optical signal; the transmission direction of the optical signal is parallel to the plane of the substrate. The packaging structure includes: a substrate, a monitor, and the electro-optic modulator chip; the electro-optic modulator chip is fixedly mounted on the substrate; the monitor is fixedly mounted on the substrate; the monitor receives the monitoring optical signal output by the electro-optic modulator chip and performs optical power monitoring based on the monitoring optical signal to obtain the monitoring result.

The application discloses a packaging structure, an electro-optical modulator and an optical quantum computer, and relates to the technical field of optical communication. The packaging structure comprises a tube shell, a support and an electro-optical chip. The electro-optical chip is arranged on the tube shell through the support. The support is used for isolating the tube shell and the electro-optical chip. The packaging structure, the electro-optical modulator and the optical quantum computer can inhibit a parasitic mode and improve the electro-optical broadband of the electro-optical device.

This invention provides an improved electro-optic modulator for optical integrated circuits (PICs). [Solution] An electro-optic modulator for an optical integrated circuit includes a substrate, a first waveguide on a first portion of the substrate, a second waveguide on a second portion of the substrate, and a first electrode in contact with the first waveguide, wherein the first waveguide includes a first electrode located between the first electrode and the first portion of the substrate, and a second electrode in contact with the second waveguide, wherein the second waveguide includes a second electrode located between the second electrode and the second portion of the substrate.

The present application belongs to the technical field of wavefront distortion measurement, and particularly relates to a wavefront distortion measurement system and method caused by light field waist spot mismatch in a cavity enhancement system. In order to accurately capture the wavefront distortion signal caused by light field waist spot mismatch, an electro-optic modulator (EOM), a convex lens, a three-mirror ring cavity, a plane mirror, a multi-quadrant detector (MPD) and a frequency mixer are sequentially arranged on the outgoing light path of the laser. Through light field modulation, resonance amplification, phase-locked demodulation and quantitative calculation, an error signal reflecting the distortion degree of two types is extracted, the minimum measurable waist spot size and position change are derived, accurate feedback is provided for long-term stable locking of the optical cavity, additional distortion interference caused by the thermal effect of the laser is compensated, and the measurement accuracy and stability of the system are improved.

This utility model discloses an electro-optic modulator and an optical communication system. The electro-optic modulator includes: a housing, a cover plate, a modulator chip, an optical input port, an optical output port, an RF signal input, and an internal component. The housing has a cavity and an opening, and the cover plate is used to seal the opening. The modulator chip is disposed within the cavity. The optical input port and the optical output port are both connected to the modulator chip. The RF signal input is connected to the modulator chip. The internal component is disposed within the cavity and connected to the housing. The modulator chip is disposed between the housing and the internal component. By placing the internal component within the cavity of the electro-optic modulator housing and placing the modulator chip between the housing and the internal component, the space around the modulator chip can be significantly reduced, signal resonance can be reduced, return loss can be lowered, and the bandwidth of the electro-optic modulator can be increased.

A diaphragm-type optical fiber micro-vibration measurement apparatus and method based on a single-pass band microwave photonic filter. The apparatus comprises a broadband light source module (1), a three-port circulator (2), an AU diaphragm optical fiber micro-vibration sensor (3), an erbium-doped optical fiber amplifier (4), a polarization controller (5), an electro-optical modulator (6), a power supply module (7), a radio-frequency source module (8), a dispersion compensation optical fiber (9), a photoelectric detector (10), a data acquisition card (11) and a computer (12), wherein the broadband light source module (1) is connected to one port of the three-port circulator (2) by means of an optical fiber connection line.

An optical matrix multiplication unit for an optoelectronic system can be used to form an artificial neural network, having N input waveguides, M output waveguides and a plurality of matrix multiplication unit cells for signal processing of optical signals of one each of the N input waveguides and for transferring the processed signals into one each of the M output waveguides, wherein each of the matrix multiplication unit cells is allocated to one of the input waveguides and one of the output waveguides and undertakes a unique allocation between said two allocated waveguides. Each of the matrix multiplication unit cells has, for signal processing and signal transfer, a directional coupler, having an electrooptical modulator for transmission control of the directional coupler, interconnected between the allocated input waveguide and the allocated output waveguide.

The application relates to the field of high-speed optical communication devices, in particular to a high-bandwidth double-slow-wave-electrode thin-film lithium tantalate electro-optic modulator. The lithium tantalate electro-optic modulator comprises, from bottom to top, a substrate layer, a bonding layer, a thin-film lithium tantalate layer, a cladding layer and an electrode layer. The electrode layer comprises a signal electrode, a first ground electrode, a second ground electrode and a plurality of periodically arranged double-slow-wave-electrode structures combined by sawtooth and T-shaped structures. The application solves the problem that the thin-film lithium niobate modulator is difficult to realize stable work in high-speed and high-power applications due to the inherent strong birefringence and photorefractive effect of the material, realizes the speed matching between the radio frequency signal and the optical carrier, solves the speed mismatching problem in the electro-optic modulator, and improves the electro-optic bandwidth of the modulator.

This invention discloses a wavelength division multiplexing (WDM) trapping device and a method for measuring extremely weak forces in a single-beam vacuum optical trap. A fiber laser emits a laser beam, which passes sequentially along the fiber through a fiber acousto-optic modulator, a fiber beam splitter, and a 1064nm fiber collimator to obtain beam A. Beam A is transmitted through a dichroic mirror into a vacuum cavity, trapping and detecting micro / nano particles. Beams B, C, and D, obtained through multiple fiber beam splitters, a PPLN waveguide frequency doubling module, a fiber electro-optic modulator, and a 532nm fiber collimator, sequentially enter the vacuum cavity to triaxially cool the micro / nano particles in a vacuum environment. At this point, the micro / nano particles are in a stable state. A voltage is applied to the electrode plate, reducing the intensity of beam A, ultimately achieving a balance between electric field force and gravity. The electric field force is then used as the measurement value for the gravity of the micro / nano particles. This invention employs a wavelength division multiplexing method, achieving triaxial cooling, trapping, and detection with only one light source, and using optical fiber to replace most optical components, resulting in greater integration.

This invention discloses a heterogeneous integrated electro-optic modulator and its alignment method based on write field splicing compensation, relating to the field of silicon-based optoelectronics technology. The modulator comprises, from bottom to top, a silicon substrate with a thermal oxide layer, a bottom patterned waveguide layer, an intermediate transition dielectric layer, a top electro-optic thin film layer, and a top traveling-wave electrode structure. The bottom waveguide layer has a write field splicing region along the light propagation direction, within which a thermal compensation structure is configured, and a dedicated alignment mark is provided within a designated area. This mark is formed synchronously with the waveguide layer and the compensation structure within the same photolithographic write field. The top traveling-wave electrode structure is overlaid across layers based on this mark, forming a predetermined spatial matching relationship with the write field splicing region. This invention can solve the problems of optical scattering loss caused by long-distance bottom waveguide field-separated exposure splicing and the limited accuracy of cross-layer overlay after heterogeneous bonding, and achieves precise overlay positioning of the cross-layer traveling-wave electrode.

This invention provides a tunable on-chip frequency conversion system, comprising: a first laser for generating laser light of a first wavelength; a second laser for generating laser light of a second wavelength; an adjustable laser array, including at least one third laser for generating laser light of a third wavelength; a first photodetector for beating the first combined beam to obtain a fixed local oscillator signal; a second photodetector for beating the second combined beam to obtain an adjustable local oscillator signal; an electro-combiner for mixing the signal to be converted with the fixed local oscillator signal to obtain a mixed signal; an electro-optic modulator for modulating the third split beam, the mixed signal, and the adjustable local oscillator signal to form an optical carrier signal; and a third photodetector for beating the optical carrier signal to obtain a converted signal. This system employs double-conversion technology to achieve high-quality signal conversion, has tunability advantages, and can be widely applied in fields such as microwave photonic signal processing.

This document describes systems and techniques for using electro-optic modulators based on aluminum scandium nitride. For example, an apparatus or device may include an optical waveguide comprising aluminum scandium nitride (AlScN) formed as part of a piezoelectric layer having an axis from a first side to a second side of the waveguide. The apparatus or device may also include an electrical signal line formed on the first side of the waveguide and a reference node formed on the second side of the waveguide.

Silicon-silicon oxide-lithium niobate high bandwidth electro-optical modulator and integrated method, the wafer is from bottom to top silicon substrate layer, silicon oxide isolation layer, lithium niobate film layer, silicon oxide buffer layer and silicon film layer; The electro-optical modulator comprises a multimode interferometer, a mode spot converter, an electro-optical phase shift arm, a traveling wave electrode and a thermoelectric electrode. The present application forms a conventional silicon waveguide, a thin silicon waveguide and a silicon oxide waveguide by etching multiple times, and forms a traveling wave electrode and a thermoelectric electrode by metal deposition. The silicon oxide layer acts as a buffer layer to alleviate the thermal mismatch and lattice mismatch between the silicon wafer and the lithium niobate wafer, improve the reliability and yield of the electro-optical modulator based on the silicon-silicon oxide-lithium niobate wafer, and provide a new degree of freedom for the design of the electro-optical modulator. The present application is compatible with CMOS process, and takes advantage of silicon, silicon oxide and lithium niobate, which is conducive to improving the compactness and reliability of integration.

This invention relates to an InP-based Mach-Zehnder interferometer electro-optic modulator and its fabrication method, belonging to the field of electro-optic modulator fabrication technology. The invention discloses an InP-based Mach-Zehnder interferometer electro-optic modulator, comprising a sequentially connected optical input terminal, an optical modulation region, and an optical output terminal. The traveling wave electrode in the optical modulation region includes a microwave transmission line and several periodically arranged electrodes connected to the transmission line. The electrodes are located on the surface of a P-type contact layer of an active waveguide structure, and the active waveguide structure, from bottom to top, comprises an InP substrate layer and an epitaxial wafer. The epitaxial wafer, from bottom to top, comprises an N-type doped layer, spacer layer I, a quantum well layer, spacer layer II, a lightly doped P-type layer, a P-type doped layer, and a P-type contact layer.

This application relates to the field of electro-optic modulation technology, disclosing a silicon-based black phosphorus heterogeneous integrated electro-optic modulator and its fabrication method, aiming to solve the problems of low efficiency and limited bandwidth of silicon-based modulators, and high electrode absorption loss and poor environmental stability of black phosphorus devices. The modulator includes a field-effect substrate, a silicon-based waveguide, a black phosphorus modulation layer, an isolation cladding, and electrode units. The substrate consists of a silicon substrate and a buried oxide dielectric layer. The silicon-based waveguide adopts a micro-ring resonant structure, and the black phosphorus active layer is attached to the surface of the micro-ring waveguide. The isolation cladding fully covers the waveguide and the black phosphorus units, and reserves electrode mounting positions for physical isolation from the black phosphorus, with the electrodes embedded within. The device of this invention features low loss, low driving voltage, high modulation bandwidth, and high stability, is compatible with silicon-based CMOS processes, and is suitable for ultra-high-speed optical communication, silicon-based photonic integration, and other fields.

The application discloses an electro-optical modulator, a modulation method and a preparation method. The electro-optical modulator comprises a silicon substrate, a silicon dioxide insulating layer, an input waveguide, an input beam splitter, an output coupler, an output waveguide, waveguide arms and a silicon dioxide-graphene composite structure arranged on both sides of the waveguide arms. The waveguide arms are in two groups, and the two groups of waveguide arms are symmetrically arranged. Each group of waveguide arms is composed of a curved segment and a straight segment. The silicon dioxide-graphene composite structure comprises a silicon dioxide modulation arm and a graphene layer. The silicon dioxide modulation arm is symmetrically arranged with the straight segment. The graphene layer is arranged on the top plane of the silicon dioxide modulation arm and the side surface facing the waveguide arm, and forms a three-dimensional coupling structure which is coupled with the evanescent field around the waveguide arm. The electro-optical modulator can realize high-speed and low-loss conversion of electrical signals to optical signals, thereby improving the transmission quality and transmission efficiency of the optical communication system.

A method includes receiving light at a light input of an electro-optic modulator device. The method includes directing the light via the light input into optical waveguides in an optical layer of an electro-optic modulator of the electro-optic modulator device. The method includes receiving a signal at an electric input of the electro-optic modulator device. The electric input is associated with an input impedance. The method includes providing the signal to an electrode structure of the electro-optic modulator. The electrode structure generates an electrical field based on the signal. The electric field modulates light in the optical waveguides to produce modulated light based on the signal. The electrode structure includes a constant impedance section associated with a second impedance less than the input impedance. The method also includes providing the modulated light based on the signal from the optical layer to one or more output optic fibers.

This invention provides a method for controlling the operating point of an electro-optic modulator and an optical fiber sensing system. The control method includes: during the system initialization phase, performing a global scan and acquiring corresponding optical power response data; calculating the initialization completion degree and real-time drift rate; when the initialization completion degree and / or real-time drift rate meet the mode switching threshold condition, switching from the global scan mode to the local scan mode to achieve seamless connection between the two modes; using the bias voltage corresponding to the initial lowest point of the response curve obtained by the global scan fitting as the initial range center of the local scan, acquiring corresponding optical power response data, and calculating the frequency domain feature value E; using the frequency domain feature value E as the discrimination criterion, by analyzing the signal frequency domain energy distribution law, when the frequency domain feature value E meets the preset condition, locking the bias voltage corresponding to the frequency domain feature value E as the operating point of the electro-optic modulator. This method can effectively filter out environmental noise and circuit interference and accurately lock the operating point.

A photonic integrated circuit for modulating light includes an electro-optic modulator disposed along a top surface of a substrate. The electro-optic modulator includes an optical waveguide segment connected between two optical waveguide loop mirrors. At least one of the two optical waveguide loop mirrors includes a Mach-Zehnder modulator (MZM) having a pair of 2×2 optical couplers at opposite ends thereof to couple light in and out of the MZM, one of the 2×2 couplers being terminated by a waveguide loop. Substituting MZI tuning circuits comprising a thermal tuner connected in series between two directional couplers for the 2×2 optical couplers can compensate for coupler fabrication errors that may affect power splitting, ensuring a near perfect 50:50 power splitting ratio thus enabling improvements in both modulation voltage and modulation bandwidth.

An electro-optic modulator is disclosed with reduced switching voltage. The electro-optic modulator includes a modulator material film layer. The modulator material film layer includes a polymer matrix. Droplets of liquid crystals are dispersed within the polymer matrix. The liquid crystals are configured to modulate light transmissivity through the electro-optic modulator. Alkanes are dispersed within the droplets. The alkane additives reduce the switching voltage of the electro-optic modulator. n-decane and mineral oil compositions are experimentally demonstrated to reduce the switching voltage.

The embodiment of the application provides a kind of distributed optical fiber sensing system based on set sparse frequency sequence pulse light time domain reflection technology, it is related to optical fiber sensing technical field, including electro-optic modulator, laser frequency modulation module, line width compression module and optical fiber sensing module;The input end of electro-optic modulator is connected with light source, laser frequency modulation module includes fiber coupler and double parallel Mach-Zehnder modulator, the first input end of fiber coupler and the output end of electro-optic modulator are connected, the first output end of fiber coupler and the input end of double parallel Mach-Zehnder modulator are connected, the output end of double parallel Mach-Zehnder modulator and the second input end of fiber coupler are connected;The input end of line width compression module and the second output end of fiber coupler are connected;The output end of line width compression module is connected with the input end of acoustooptic modulator of optical fiber sensing module, to make that the spatial resolution, detection distance and frequency band width etc. Parameters of distributed optical fiber sensing system simultaneously have higher performance.

A system includes a gain module, an optical module, and a feedback module. The gain module processes a first portion of an electrical signal to generate a first compensated portion of the electrical signal, the first portion of the electrical signal having a first frequency range. The optical module generates an optical signal based on a combination of the first compensated portion of the electrical signal and a second portion of the electrical signal having a second frequency range that is higher than the first frequency range. The feedback module provides, to the gain module, an electrical feedback signal based at least in part on a signal strength of the optical signal. The gain module updates the first compensated portion of the electrical signal based on the electrical feedback signal.

The application provides an electro-optical modulator and an optical quantum computer, and relates to the technical field of electro-optical modulation.The electro-optical modulator comprises a waveguide optical path structure, a direct current bias structure and a radio frequency modulation structure.The waveguide optical path structure comprises an input end optical waveguide, a light splitting waveguide, a first modulation arm, a second modulation arm, a beam combining waveguide, a curved waveguide and an output end optical waveguide connected in sequence.The output end optical waveguide is arranged side by side with the input end optical waveguide and is connected with the curved waveguide.The direct current bias structure is arranged on the two sides of the first modulation arm.The radio frequency modulation structure is arranged on the two sides of the first modulation arm and the two sides of the plurality of second modulation arms.The light signal directions of the input end optical waveguide and the output end optical waveguide are opposite.Compared with the prior art, the application can realize the same side coupling of the input and output optical ports, the overall size is smaller, the degree of integration is higher, the light directly entering the light outlet port is avoided, the optical crosstalk is reduced, the extinction ratio is improved, and the optical signal transmission effect is improved.

This invention discloses an electro-optic modulator and its manufacturing method, belonging to the field of silicon photonics technology. The manufacturing method of the electro-optic modulator includes: providing a substrate; forming a first device pattern on the substrate; forming a protective layer flush with the top surface on the first device pattern and the substrate, wherein the first device pattern has a first region for ion implantation and a second region for ion implantation; forming a blocking pattern on the protective layer outside the first region, at least covering the second region; forming a first photoresist pattern on the protective layer for ion implantation of the first region, forming a first ion implantation region; removing the first photoresist pattern; forming a dielectric layer on the protective layer; and removing the dielectric layer on top of the blocking pattern; forming a second photoresist pattern on the dielectric layer, wherein the opening area of ​​the second photoresist pattern is not smaller than that of the blocking pattern; removing the blocking pattern; and performing ion implantation on the second region, forming a second ion implantation region. By setting the blocking pattern as an ion implantation mask and removing the blocking pattern in subsequent implantation, and then performing ion implantation again, two ion implantation regions with controllable spacing are formed, enabling the formation of a stable lateral PN junction structure.

The application discloses a monocrystal lithium niobate thin film and a preparation and application thereof, and belongs to the field of monocrystal growth. The application adopts a hydrothermal method to epitaxially grow a large-area high-quality monocrystal lithium niobate thin film on a monocrystal lithium niobate and lithium tantalate substrate for the first time, the surface of the thin film is smooth and continuous, and the interface is even atom-level smooth, thereby solving the problem that a large-area high-quality monocrystal lithium niobate thin film cannot be epitaxially grown for a long time. Moreover, the preparation method can be used for obtaining high-quality epitaxial monocrystal lithium niobate thin films with different thicknesses. The application has the advantages of simple process, easy control, low cost and easy production. The high-quality monocrystal lithium niobate thin film can be applied to the information field such as a surface acoustic wave device, an electro-optic modulation device and a photonic chip.

The application discloses a picosecond laser ultrasonic-based metal film plane stress measuring device and method, and the device comprises a femtosecond laser, an optical isolator, a 1 / 2 wave plate and a first polarization beam splitter; the first polarization beam splitter divides the incident laser into pump light and probe light, the pump light passes through a frequency doubling assembly and an electro-optic modulator, and the probe light passes through an adjustable optical delay line and a polarization control element, and the pump light and the probe light are combined at a dichroic mirror; the method comprises the following steps: changing the optical path difference of the pump light and the probe light; collecting the reflectivity change and averaging multiple times; performing background removal and digital filtering processing to obtain a smooth echo characteristic signal; applying a peak searching algorithm to determine the time delay corresponding to the first echo, and combining the known film thickness to calculate the longitudinal wave speed; calibrating the speed under different known stress conditions; establishing a speed-stress mapping relationship to obtain the in-plane residual stress value of the metal film. The application realizes sub-picosecond time, micron-level space and non-contact film stress detection.