The invention provides a three-stage thermal field of a polysilicon
ingot furnace, which can efficiently reduce the phenomenon that carbon
powder falls into
liquid silicon because of relative movement between the
peripheral insulation part and the top insulation part in a growth process of a
silicon ingot. The three-stage thermal field of the polysilicon
ingot furnace comprises a furnace chamber,wherein the furnace chamber is internally provided with a top
insulation layer, a
peripheral insulation layer and a bottom insulation plate, the top
insulation layer, the
peripheral insulation layer and the bottom insulation plate form an insulation cavity in a
closed state, the insulation cavity is internally provided with a top heater, a peripheral heater and a
directional solidification block,and a gas inlet
pipe which exhausts gas downwards is arranged at the top insulation layer. The three-stage thermal field of the polysilicon ingot furnace is characterized in that the peripheral insulation layer comprises an upper part insulation layer and a lower part insulation layer, wherein the outside
edge surface of the upper part insulation layer is connected with an external fixing seat ina fastening way, the external fixing seat is connected with the inner wall of the furnace chamber in the fastening way, the outer wall of the lower part insulation layer clings to the inner wall of the upper part insulation layer, the outside
edge surface of the lower part insulation layer is connected with a vertical connecting rod, and the connecting rod is connected with a drive structure which drives in a vertical direction.