Three-stage thermal field of polysilicon ingot furnace

Abstract

The invention provides a three-stage thermal field of a polysilicon ingot furnace, which can efficiently reduce the phenomenon that carbon powder falls into liquid silicon because of relative movement between the peripheral insulation part and the top insulation part in a growth process of a silicon ingot. The three-stage thermal field of the polysilicon ingot furnace comprises a furnace chamber,wherein the furnace chamber is internally provided with a top insulation layer, a peripheral insulation layer and a bottom insulation plate, the top insulation layer, the peripheral insulation layer and the bottom insulation plate form an insulation cavity in a closed state, the insulation cavity is internally provided with a top heater, a peripheral heater and a directional solidification block,and a gas inlet pipe which exhausts gas downwards is arranged at the top insulation layer. The three-stage thermal field of the polysilicon ingot furnace is characterized in that the peripheral insulation layer comprises an upper part insulation layer and a lower part insulation layer, wherein the outside edge surface of the upper part insulation layer is connected with an external fixing seat ina fastening way, the external fixing seat is connected with the inner wall of the furnace chamber in the fastening way, the outer wall of the lower part insulation layer clings to the inner wall of the upper part insulation layer, the outside edge surface of the lower part insulation layer is connected with a vertical connecting rod, and the connecting rod is connected with a drive structure which drives in a vertical direction.

Description

technical field [0001] The invention relates to the technical field of the structure of a polysilicon ingot furnace, in particular to a three-stage heat field of a polysilicon ingot furnace. Background technique [0002] The polysilicon ingot furnace is mainly used to produce silicon semiconductor materials by casting ingots. The existing polysilicon ingot furnace adopts a two-stage thermal field structure. The structure is shown in figure 1 , one section is the upper heat preservation part, which is divided into four sides movable up and down heat preservation part 1, surrounding heater 2, top heater 3, top fixed heat preservation part 4; There is an air intake pipe 8 facing downwards. When the silicon ingot grows, it can move up and down around. The heat preservation part 1 moves upwards to expose the lower part of the directional solidified block 6 to dissipate heat downwards, so that the liquid silicon in the crucible 7 solidifies and grows upwards. Due to the movem...

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Problems solved by technology

Due to the movement of the movable insulating part 1 around, the friction between the movable insulating part 1 and the fixed insulating part 4 on the top will generate carbon dust, which will easily fall into the silicon material and contaminate the silicon material, making the battery produced later The life of the chip is greatly shortened. At the same time, the two-stage thermal field structure has a large heat dissipation channel, which will cause high energy consumption in production and lead to a long production cycle.

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