To provide a novel
composite oxide and a
semiconductor device which has excellent electric characteristics and of which the reliability is high.SOLUTION: A
composite oxide includes at least two regions 001 and 002. The region 001 contains In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be and Cu). The region 002 contains In, Zn and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be and Cu). When the
composite oxide is analyzed by energy dispersive X-
ray spectroscopy, the element M1 in the region 001 is detected less than the element M2 in the region 002. A
peripheral part of the region 001 is observed blurred by mapping analysis in the energy dispersive X-
ray spectroscopy.SELECTED DRAWING: Figure 1