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1097 results about "Magnetic domain" patented technology
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A magnetic domain is a region within a magnetic material in which the magnetization is in a uniform direction. This means that the individual magnetic moments of the atoms are aligned with one another and they point in the same direction. When cooled below a temperature called the Curie temperature, the magnetization of a piece of ferromagnetic material spontaneously divides into many small regions called magnetic domains. The magnetization within each domain points in a uniform direction, but the magnetization of different domains may point in different directions. Magnetic domain structure is responsible for the magnetic behavior of ferromagnetic materials like iron, nickel, cobalt and their alloys, and ferrimagnetic materials like ferrite. This includes the formation of permanent magnets and the attraction of ferromagnetic materials to a magnetic field. The regions separating magnetic domains are called domain walls, where the magnetization rotates coherently from the direction in one domain to that in the next domain. The study of magnetic domains is called micromagnetics.
System and method for transferring data to and from a magnetic shift register with a shiftable data column
InactiveUS20060120132A1Magnitude fringing fieldEasy to operateDigital storageShift registerData storing
A magnetic shift register utilizes a data column comprising a thin wire of magnetic material. A writing element selectively changes the direction of the magnetic moment in the magnetic domains to write the data to the data column. Associated with each domain wall are large magnetic fringing fields concentrated in a very small space. These magnetic fringing fields write to and read from the magnetic shift register. When the domain wall is moved close to another magnetic material, the fringing fields change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material. A reading element similar to a tunneling junction comprises a free layer and a pinned layer of magnetic material. Fringing fields change the direction of the magnetic moment in the free layer with respect to the pinned layer, changing electrical resistance of the reading element and “reading” data stored in the magnetic shift register.
Owner:GLOBALFOUNDRIES US INC
Method and system for providing domain wall assisted switching of magnetic elements and magnetic memories using such magnetic elements
A method and system for providing a magnetic element is described. The magnetic element includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. The free layer includes a first magnetic layer and at least one of a second magnetic layer and an intermediate layer. The intermediate layer would reside between the first and second magnetic layers. The free layer also includes at least one domain wall therein during switching. In addition, the magnetic element is configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.
Owner:SAMSUNG SEMICON
System and method for writing to a magnetic shift register
InactiveUS6898132B2Variable capacityHigh cost of readingLiquid applicationDigital storageShift registerMolecular physics
A writing device can change the direction of the magnetic moment in a magnetic shift register, thus writing information to the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to write to the magnetic shift register. When the domain wall is moved close to another magnetic material, the large fields of the domain wall change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material.
Owner:GLOBALFOUNDRIES US INC
Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same
InactiveUS7031178B2Highly localized and large magnetic fieldsComparable in costLiquid applicationDigital storageShift registerProcessor register
A magnetic shift register uses the inherent, natural properties of domain walls in magnetic materials to store data. The shift register uses spin electronics without changing the physical nature of its constituent materials. The shift register comprises a fine track or strip of magnetic materials. Information is stored as domain walls in the track. An electric current is applied to the track to move the magnetic moments along the track past a reading or writing device. In a magnetic material with domain walls, a current passed across the domain wall moves the domain wall in the direction of the current flow. As the current passes through a domain, it becomes “spin polarized”. When this spin polarized current passes through the next domain and across a domain wall, it develops a circle of spin torque. This spin torque moves the domain wall.
Owner:GLOBALFOUNDRIES U S INC
Magnetic Data Storage Device and Method
InactiveUS20100124091A1High densityNanoinformaticsSemiconductor/solid-state device manufacturingNanowire arrayMolecular physics
A data storage device comprises an array of parallel magnetic nanowires each having a uniaxial anisotropy with an easy axis substantially perpendicular to the longitudinal axis of the nanowire and which is rotated about the longitudinal axis along the length of the nanowire, and a magnetisation state that follows the easy axis, where each nanowire has a data input element for nucleating magnetic domains separated by domain walls in an end of the nanowire, the sequence of domains and walls representing binary data, and a data read-out element operable to detect the magnetisation at an end of the nanowire, the device also comprising a magnetic field source operable to generate a magnetic field rotating in a plane substantially perpendicular to the longitudinal axes of the nanowires so as to propagate domain walls along the at least one nanowire. Reversal of the direction of rotation of the magnetic field reverses the propagation direction of the domain walls, so that data can be moved in either direction along the nanowires.
Owner:INGENIA HLDG LTD
System and method for reading data stored on a magnetic shift register
A reading device reads the direction of the magnetic moment of domains in a magnetic shift register, thus reading information stored in the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to read data stored on to the magnetic shift register. The reading device reads the direction of the magnetic moment in a magnetic shift register, thus reading information stored in the domains.
Owner:GLOBALFOUNDRIES US INC
System and method for transferring data to and from a magnetic shift register with a shiftable data column
InactiveUS7236386B2More sensitivityMagnitude fringing fieldDigital storageShift registerProcessor register
A magnetic shift register utilizes a data column comprising a thin wire of magnetic material. A writing element selectively changes the direction of the magnetic moment in the magnetic domains to write the data to the data column. Associated with each domain wall are large magnetic fringing fields concentrated in a very small space. These magnetic fringing fields write to and read from the magnetic shift register. When the domain wall is moved close to another magnetic material, the fringing fields change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material. A reading element similar to a tunneling junction comprises a free layer and a pinned layer of magnetic material. Fringing fields change the direction of the magnetic moment in the free layer with respect to the pinned layer, changing electrical resistance of the reading element and “reading” data stored in the magnetic shift register.
Owner:GLOBALFOUNDRIES U S INC
Pump with an electrodynamically supported impeller and a hydrodynamic bearing between the impeller and the stator
A pump includes an impeller, a stator, and a plurality of magnets forming bearing poles coupled to a selected one of the stator or the impeller. The pump further includes a plurality of shorted coils coupled to the other of the stator and the impeller. The plurality of bearing poles and shorted coils co-operate to form an electrodynamic bearing during rotation of the impeller. The electrodynamic bearing supports the impeller either axially or radially during operation of the pump. Hydrodynamic bearing surfaces are provided for generating a hydrodynamic bearing between the impeller and stator. The plurality of magnets may comprise a plurality of distinct magnetic elements or a single element comprising a plurality of distinct magnetic domains. The plurality of distinct magnetic elements or domains may be arranged to form a Halbach array.
Owner:DAVIS WILLIAM D +1
System and method for reading data stored on a magnetic shift register
InactiveUS6920062B2Highly localized and large magnetic fieldsComparable in costDigital storageShift registerData storing
A reading device reads the direction of the magnetic moment of domains in a magnetic shift register, thus reading information stored in the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to read data stored on to the magnetic shift register. The reading device reads the direction of the magnetic moment in a magnetic shift register, thus reading information stored in the domains.
Owner:GLOBALFOUNDRIES US INC
Patterned multilevel perpendicular magnetic recording media
InactiveUS6947235B2Improve noiseImprove recording densityBase layers for recording layersPatterned record carriersMaterials scienceMagnetic moment
A patterned perpendicular magnetic recording medium has magnetic islands that contain stacks of individual magnetic cells to provide multilevel recording. Each cell in an island is formed of a material or set of materials to provide the cell with perpendicular magnetic anisotropy and is a single magnetic domain. Each cell is magnetically decoupled from the other cells in its island by nonmagnetic spacer layers. Thus each cell can have a magnetization (magnetic moment) in one of two directions (into or out of the plane of the layer making up the cell), and this magnetization is independent of the magnetization of the other cells in its island. This permits multiple magnetic levels or states to be recorded in each magnetic island.
Owner:WESTERN DIGITAL TECH INC
System and method for storing data in an unpatterned, continuous magnetic layer
ActiveUS20050078511A1High local magnetic fieldHigh densityNanoinformaticsMagnetic-field-controlled resistorsMagnetic storageThermal stability
Digital information is stored in an unpatterned magnetic film, using the inherent, natural properties of the domain walls in ferromagnetic materials to write data on an unpatterned magnetic film. Data is read from the unpatterned magnetic film using magnetic tunneling junctions (MTJs). To achieve sufficient thermal stability, the magnetic fields required to change the orientation of these magnetic regions may be much larger than can be provided by currents passing through wires. This larger magnetic field is achieved by using the domain wall fringing field generated at the boundary between two magnetic domain walls. The magnetic regions are written by using the fringing fields from magnetic domain walls in neighboring magnetic wires. These wires are brought close to the magnetic storage layer where the magnetic storage regions are to be written.
Owner:GLOBALFOUNDRIES US INC
Integrated Magneto-Optical Devices for Uni-Directional Optical Resonator Systems
A resonator system comprises an optical resonator that supports one or more pairs of nearly degenerate defect states. One or more magnetic domains comprising at least one gyrotropic material in the optical resonator cause magneto-optical coupling between the two states so that the system lacks time-reversal symmetry. In one embodiment, a single magnetic domain is used that dominates induced magneto-optical coupling between the defect states. The above resonator system may be used together with other components such as waveguides to form circulators, add drop filters, switches and memories.
Owner:THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIV
Magnetic recording medium, method of producing the same and magnetic recording and reproducing device
InactiveUS20020127433A1Excellent magnetic recordingExcellent reproducing characteristicBase layers for recording layersRecord information storageNon magneticComputer science
The present invention aims to provide a magnetic recording medium, a method for producing the same, and a magnetic recording and reproducing device which can prevent spike noise and improve the error rate. The present invention provides a magnetic recording medium, a method for producing the same, and a magnetic recording and reproducing device comprising at least one nonmagnetic substrate, a soft magnetic underlayer 2, an orientation control layer to control the orientation of the layer formed directly above the same, and a perpendicular magnetic layer having an axis of easy magnetization which is oriented mainly perpendicularly to the nonmagnetic substrate, and the soft magnetic underlayer 2 is formed with a multilayer structure having soft magnetic layers 21A and 21B, and one or more separation layers 22 interposed between the soft magnetic layers, and at least one of the soft magnetic layers 21A and 21B comprises a material with a structure having no magnetic domain walls.
Owner:SHOWA DENKO KK +1
Magnetic recording medium substrate and perpendicular magnetic recording medium
InactiveUS7955723B2Inhibition formationSuppress generation of medium noiseLayered productsRecord information storageNon magneticMagnetic characteristic
A perpendicular magnetic recording medium comprising a pair of soft magnetic layers that are laminated via a non-magnetic layer and antiparallel-coupled to each other and that are provided between a non-magnetic substrate and a magnetic recording layer, wherein spike noise and medium noise can be positively suppressed when information recording and reproduction are carried out at high recording surface density. At least one pair of soft magnetic layers are laid and formed via a non-magnetic layer on a substrate of a non-magnetic material so that magnetic characteristics obtained by integrating the pair of soft magnetic layers have a magnetic hysteresis to thereby prevent the formation of a magnetic domain wall.
Owner:WESTERN DIGITAL TECH INC
Magnetic sensing device, method of forming the same, magnetic sensor, and ammeter
ActiveUS7248045B2Suppressing appearanceInduction stabilityNanostructure applicationNanomagnetismHysteresisCurrent sheet
The present invention provides a magnetic sensing device capable of stably sensing a signal magnetic field with high sensitivity by suppressing occurrence of a hysteresis to reduce 1 / f noise. A magnetic sensing device has a stacked body including a pinned layer having a magnetization direction pinned to a predetermined direction (Y direction), a free layer having a magnetization direction which changes according to an external magnetic field and, when the external magnetic field is zero, becomes parallel to the magnetization direction of the pinned layer, and an intermediate layer sandwiched between the pinned layer and the free layer. Consequently, as compared with the case where the pinned layer and the free layer have magnetization directions which are orthogonal to each other when the external magnetic field is zero, variations in the spin directions of magnetic domains in the free layer can be reduced. In the case of passing read current, appearance of a hysteresis in the relation between a change in the external magnetic field and a resistance change can be suppressed. As a result, 1 / f noise is suppressed and a signal magnetic field can be stably sensed with high sensitivity.
Owner:TDK CORPARATION
Magnetic tunnel junction cell including multiple vertical magnetic domains
Magnetic tunnel junction cell including multiple vertical domains. In an embodiment, a magnetic tunnel junction (MTJ) structure is disclosed. The MTJ structure includes an MTJ cell. The MTJ cell includes multiple vertical side walls. Each of the multiple vertical side walls defines a unique vertical magnetic domain. Each of the unique vertical magnetic domains is adapted to store a digital value.
Owner:QUALCOMM INC
Magnetic memory element and memory device including same
InactiveUS6956257B2Low power operationEliminate the problemTransistorMagnetic-field-controlled resistorsMagnetic memoryNon magnetic
Various embodiments of a magnetic memory element, including a storage layer and a reference layer, are disclosed. The storage layer includes two conjugate magnetic domain segments having opposing helicities. The reference layer is permanently magnetized. A non-magnetic layer is interposed between the two magnetic layers. The boundaries of the two conjugate magnetic domain segments of the storage layer define domain walls along the radial direction thereof. The magnetic moment direction of one domain wall points inward and the magnetic moment direction of the other domain wall points outward. The two domain walls always attract each other, leaving one segment significantly larger than the other. These two different conditions (each longer the other) define two binary data states. By sending a vertical current through the magnetic memory element, transitions between the memory states can be achieved. Also disclosed are a memory cell, a memory device, and a computing device.
Owner:CARNEGIE MELLON UNIV
Recording head and information recording apparatus
To generate a satisfactory recording magnetic domain on a recording medium and to improve the durability of a recording head, an information recording apparatus for generating an optical near field and thermo-magnetically recording information on the recording medium is provided with a light source, a magnetic pole for applying a magnetic field to the recording medium and a diffuser that generates an optical near field in the vicinity of the recording medium when light from the light source is radiated. The diffuser is formed with it in contact with the magnetic pole so that the face which light from the light source irradiates is substantially perpendicular to the recording medium. Thereby, recording density in the information recording apparatus can be increased, simultaneously the reliability can be also enhanced and as a result, the cost can be reduced.
Owner:HITACHI LTD
Array substrate for fringe field switching mode liquid crystal display device
An array substrate for a fringe field switching mode liquid crystal display device includes a substrate including a plurality of pixel regions each having a first domain, a second domain and a domain boundary area between the first and second domains; gate and data lines on the substrate and crossing each other to define the pixel region; a thin film transistor in each pixel region and connected to the gate and data lines; a pixel electrode in each pixel region and connected to the thin film transistor; and a common electrode overlapping the pixel electrode with an insulating layer interposed between the common and pixel electrode, wherein a plurality of openings are formed through the common electrode or the pixel electrode, and each opening has a first angle in the first and second domains with respect to a rubbing direction and a second angle larger than the first angle in the domain boundary area with respect to the rubbing direction.
Owner:LG DISPLAY CO LTD
Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same
InactiveUS20050094427A1Comparable in costIncrease memory capacityLiquid applicationDigital storageShift registerSpins
A magnetic shift register uses the inherent, natural properties of domain walls in magnetic materials to store data. The shift register uses spin electronics without changing the physical nature of its constituent materials. The shift register comprises a fine track or strip of magnetic materials. Information is stored as domain walls in the track. An electric current is applied to the track to move the magnetic moments along the track past a reading or writing device. In a magnetic material with domain walls, a current passed across the domain wall moves the domain wall in the direction of the current flow. As the current passes through a domain, it becomes “spin polarized”. When this spin polarized current passes through the next domain and across a domain wall, it develops a circle of spin torque. This spin torque moves the domain wall.
Owner:GLOBALFOUNDRIES US INC
Method of fabricating data tracks for use in a magnetic shift register memory device
InactiveUS20050186686A1Solid-state devicesSemiconductor/solid-state device manufacturingShift registerDielectric
A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nm×100 nm are etched in this multilayered stack of alternating layers. Vias may be etched form smooth or notched walls. Vias are filled by electroplating layers of alternating types of ferromagnetic or ferrimagnetic metals. The alternating ferromagnetic or ferrimagnetic layers are comprised of magnetic materials with different magnetization or magnetic exchange or magnetic anisotropies. These different magnetic characteristics allow the pinning of magnetic domain walls at the boundaries between these layers. Alternatively, vias are filled with a homogeneous ferromagnetic material. Magnetic domain walls are formed by the discontinuity in the ferromagnetic or ferromagnetic material that occurs at the notches or at the protuberances along the via walls.
Owner:GLOBALFOUNDRIES INC
Method for magnetic recording on patterned multilevel perpendicular media using thermal assistance and fixed write current
ActiveUS6865044B1Improve noiseImprove recording densityNanoinformaticsPatterned record carriersPatterned mediaElectrical current
A method for magnetic recording uses a fixed write current with thermal assistance to record on a patterned perpendicular magnetic recording medium. The patterned medium has magnetic blocks or islands, each of which contains a stack of individual magnetic cells to provide multilevel recording. Each cell in an island is formed of a material or set of materials to provide the cell with perpendicular magnetic anisotropy and is a single magnetic domain. Each cell is magnetically decoupled from the other cells in its island by nonmagnetic spacer layers. Thus each cell can have a magnetization (magnetic moment) in one of two directions (into or out of the plane of the layer making up the cell), and this magnetization is independent of the magnetization of the other cells in its island. This permits multiple magnetic levels or states to be recorded in each magnetic island.
Owner:WESTERN DIGITAL TECH INC
Methods involving resetting spin-torque magnetic random access memory with domain wall
A method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a first conductor, wherein the first current is operative to propagate a magnetic domain wall in a ferromagnetic film layer and the propagation of the magnetic domain wall is further operative to change the direction of a magnetic state of a first free layer magnet, and inducing a second current only through a second conductor, wherein the second current is operative to further propagate the magnetic domain wall in the ferromagnetic film layer and the propagation of the magnetic domain wall is further operative to change the direction of a magnetic state of a second free layer magnet.
Owner:IBM CORP
Magnetic memory device and method for driving the same
InactiveUS20070242505A1Increase output ratioImprove reliabilityMagnetic-field-controlled resistorsSolid-state devicesMagnetic memoryNon magnetic
The magnetic memory device comprises a magnetoresistive effect element 54 including a magnetic layer 42 having a magnetization direction pinned in a first direction, a non-magnetic layer 50 formed on the magnetic layer 42, and a magnetic layer 52 formed on the non-magnetic layer 50 and having a first magnetic domain magnetized in a first direction and a second magnetic domain magnetized in a second direction opposite to the first direction; and a write current applying circuit for flowing a write current in the second magnetic layer 52 in the first direction or the second direction to shift a magnetic domain wall between the first magnetic domain and the second magnetic domain to control a magnetization direction of a part of the magnetic layer 52, opposed to the magnetic layer 42.
Owner:FUJITSU LTD
Magnetoresistive effect sensor with double-layered film protection layer
A manufacturing method of a MR sensor includes forming a MR multi-layered structure of a first anti-ferromagnetic material layer, a first ferromagnetic material layer (pinned layer) which receives bias magnetic field caused by exchange coupling with the first anti-ferromagnetic material layer, a nonmagnetic material layer and a second ferromagnetic material layer (free layer) which changes its magnetization direction in response to magnetic signal applied thereto, depositing a protection layer on the MR multi-layered structure, removing full depth of at least end regions of the protection layer and a partial depth of end regions of the second ferromagnetic material layer, and forming a second anti-ferromagnetic material layer for exchange coupling to control magnetic domain in the second ferromagnetic material layer, on at least the end regions of the second ferromagnetic material layer. The removing is executed before annealing for controlling magnetization direction of the first anti-ferromagnetic material layer.
Owner:TDK CORPARATION
Data Storage Device and Method
InactiveUS20080278998A1Improve scalabilityImprove storage densityNanotechSemiconductor/solid-state device manufacturingMass storageNanowire
A serial magnetic mass storage device and associated data storage method is provided based on magnetic nanowires that support single magnetic domains separated by domain walls. Each data-storing nanowire has a plurality of crossing nanowires along its length, forming cross junctions that constitute domain wall pinning sites. Data is fed through each data-storing nanowire by moving the magnetic domains under the action of a field that alternates between alignment and anti-alignment with the crossing nanowires. The data is encoded in the chirality of the domain walls, with up and down chirality transverse domain walls being used to encode 0's and 1's. Data is clocked into each nanowire with suitable nucleation generators capable of nucleating domains with domain walls of pre-defined chirality. Data is clocked out of each nanowire with suitable magnetic field sensors that sense the chirality.
Owner:INGENIA HLDG LTD
Devices and methods to form a randomly ordered array of magnetic beads and uses thereof
ActiveUS7682837B2Bioreactor/fermenter combinationsBiological substance pretreatmentsHigh throughput genotypingMagnetic bead
The invention includes devices and methods for forming random arrays of magnetic particles, arrays formed using these devices and methods, and to methods of using the arrays. The invention provides an assembly (chip) with magnetic domains that produce localized magnetic fields capable of immobilizing magnetic particles such as commercially available magnetic beads. Probe or sensor molecules can be coupled to the beads, which are then dispersed on the assembly, forming a random order array. The arrays can be used for analyzing samples, targets, and / or the interaction between samples and targets. The invention finds particular use in processes such as high-throughput genotyping and other nucleic acid hybridization-based assays.
Owner:THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIV
Method for magnetic recording on patterned multilevel perpendicular media using variable write current
InactiveUS6882488B1Improve noiseImprove recording densityDifferent record carrier formsRecord information storageElectrical currentWrite current
A magnetic recording method uses a patterned perpendicular magnetic recording medium where each magnetic block or island contains a stack of individual magnetic cells to providing multilevel recording. Each cell in an island is formed of a material or set of materials to provide the cell with perpendicular magnetic anisotropy and is a single magnetic domain. Each cell is magnetically decoupled from the other cells in its island by nonmagnetic spacer layers. Thus each cell can have a magnetization (magnetic moment) in one of two directions (into or out of the plane of the layer making up the cell), and this magnetization is independent of the magnetization of the other cells in its island. This permits multiple magnetic levels or states to be recorded in each magnetic island.
Owner:WESTERN DIGITAL TECH INC
Magneto-optical recording medium and reproducing method thereof
InactiveUS20050002318A1Effectively transferred and readGood effectMechanical recordingRecord information storageControl layerCoupling
A magneto-optical recording medium, including a recording layer, a transfer control layer magnetically coupled to the recording layer, and a reproduction layer. The recording layer includes a recording magnetic domain in which information is recorded by a magnetization direction vertical to the surface of the film. The reproduction layer includes a reproduction magnetic domain in which information in the recording layer is transferred and formed as a magnetization direction by magnetic coupling. The direction of magnetization of the recording magnetic domain of the recording layer and the direction of magnetization of the transfer control layer corresponding to the recording magnetic domain are in opposite directions in at least part of the range of temperatures less than a transfer temperature where the reproduction magnetic domain is transferred to the reproduction layer. The Curie point temperature of the transfer control layer is higher than this transfer temperature.
Owner:PANASONIC CORP
Magnetic recording system with patterned multilevel perpendicular magnetic recording
InactiveUS6906879B1Improve noiseImprove recording densityNanoinformaticsPatterned record carriersMagnetic momentRecording system
A magnetic recording system, such as a magnetic recording disk drive, uses a patterned perpendicular magnetic recording medium where each magnetic block or island contains a stack of individual magnetic cells to provide multilevel recording. Each cell in an island is formed of a material or set of materials to provide the cell with perpendicular magnetic anisotropy and is a single magnetic domain. Each cell is magnetically decoupled from the other cells in its island by nonmagnetic spacer layers. Thus each cell can have a magnetization (magnetic moment) in one of two directions (into or out of the plane of the layer making up the cell), and this magnetization is independent of the magnetization of the other cells in its island, This permits multiple magnetic levels or states to be recorded in each magnetic island.
Owner:WESTERN DIGITAL TECH INC
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