1114 results about "Magnetic storage" patented technology

A data storage and retrieval device and method is disclosed. The device includes at least one magnetic storage medium configured to store target data and at least one re-configurable logic device comprising an FPGA coupled to the at least one magnetic storage medium and configured to read a continuous stream of target data therefrom, having been configured with a template or as otherwise desired to fit the type of search and data being searched. The re-configurable logic device is configured to receive at least one search inquiry in the form of a data key and to determine a match between the data key and the target data as it is being read from the at least one magnetic storage medium. This device and method can perform a variety of searches on the target data including without limitation exact and approximate match searches, sequence match searches, image match searches and data reduction searches. This device and method may be provided as part of a stand-alone computer system, embodied in a network attached storage device, or can otherwise be provided as part of a computer LAN or WAN. In addition to performing search and data reduction operations, this device may also be used to perform a variety of other processing operations including encryption, decryption, compression, decompression, and combinations thereof.

An apparatus for concentrating electromagnetic energy comprises a metallic transducer including a first section and a second section, wherein the first section is wider than the second section and has a width to length aspect ratio greater than or equal to a width to length aspect ratio of the second section, and a condenser for directing electromagnetic radiation onto the transducer. A magnetic storage device that includes the apparatus is also provided.

Aspects include readers for magnetic storage media. Each reader is operable to read multiple tracks from the storage media simultaneously by using a plurality of active regions, each active region for reading a different track. The active regions may be disposed in rows of columns, and between rows, each active region in a row may be separated from other active regions in that row to prevent interference between those active regions. Active regions of different rows may be offset from each other such that no active region overlaps with another active region over the same data track. Active regions may share shielding and / or sense current conductors. Active regions may comprise AMR, CIP GMR, CPP GMR, including spin valve and tunneling varieties of flux sensors. Multiple active regions in a row may be defined from a single MR element by spaced apart voltage tabs. Readers may be integrally fabricated in layers.

A magnetic storage device which enables stable operation at the time of recording information into MRAM and the stable retention of recorded information. The die of the magnetic storage device has a substrate, first and second wirings, a magnetic storage element and a first magnetic shielding structure. The first magnetic shielding structure is formed to cover the magnetic storage element in a plan view. Second and third magnetic shielding structures sandwich the die in a thickness direction. A lead frame member has the die mounted thereon and contains a ferromagnetic material. The lead frame member overlaps with only part of the die in a plan view.

A magnetic storage device comprises an array of magnetic memory cells (50). Each cell (50) has, in electrical series connection, a magnetic tunnel junction (MTJ) (30) and a Zener diode (40). The MTJ (30) comprises, in sequence, a fixed ferromagnetic layer (FMF) (32), a non-magnetic spacer layer (33), a tunnel barrier layer (34), a further spacer layer (35), and a soft ferromagnetic layer (FMS) (36) that can change the orientation of its magnetic moment. The material type and thickness of each layer in the MTJ (30) is selected so that the cell (50) can be written by applying a voltage across the cell, which sets the orientation of the magnetic moments of the FMF (32) and FMS (36) relative to one another. The switching is effected by means of an induced exchange interaction between the FMS and FMF mediated by the tunneling of spin-polarised electrons in the MTJ (30). The cell (50) therefore has low power consumption during write operations allowing for fast writing and dense integration of cells (50) in an array. The mechanism used to control the array to write and sense the information stored in the cells (50) is simplified.