178 results about "Magnetic storage" patented technology

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

The embodiment of the invention provides a physical unclonable function generator and a true random number generator. The physical unclonable function generator comprises a storage array and a control unit, a storage unit in the storage array comprises a magnetic storage device, and the magnetic storage device comprises a magnetic tunnel junction; the control unit is used for controlling the application of a magnetic field along a target direction to the storage array, and reading the resistance state of the storage unit to generate a physical unclonable function after the application of the magnetic field is stopped; wherein the target direction is perpendicular to or approximately perpendicular to the magnetic moment direction of the free layer in the magnetic tunnel junction in the in-plane direction, and the randomness and uniformity of the physical unclonable function are improved.

The invention discloses a quaternary ferrocolumbium cobalt sulfide crystal, a preparation method and application, and belongs to the technical field of magnetic materials, the quaternary ferrocolumbium cobalt sulfide crystal has remarkable in-plane and out-of-plane magnetic anisotropy, and the chemical general formula of the quaternary ferrocolumbium cobalt sulfide crystal is Nb3 (Fe, Co) S6; the preparation method comprises the following steps: (1) preparing and packaging raw materials; (2) vacuum packaging; (3) carrying out CVT reaction; and (4) cooling and sampling. An improved double-temperature-zone chemical vapor transport (CVT) method is adopted, and a proper transport agent is selected, so that a multi-component raw material can be transported and recrystallized in a gaseous form at a relatively low temperature, and a single crystal with uniform components and a complete structure is obtained. The material can be applied to spintronics devices, high-density magnetic storage units and magnetic sensors; and a new platform is provided for researching complex magnetic interaction, magnetic anisotropy sources, potential superconductivity, topological properties and the like.

The invention provides a magnetic storage structure and a preparation method thereof, electronic equipment and a read-write method. The magnetic storage structure comprises a spin-orbit moment coupling layer and a plurality of magnetic storage elements. Wherein each magnetic storage element comprises a magnetic tunnel junction and a one-way conducting piece, the magnetic tunnel junctions in the multiple magnetic storage elements are arranged on the spin orbit moment coupling layer in parallel, and the one-way conducting pieces are connected to the sides, away from the spin orbit moment coupling layer, of the magnetic tunnel junctions. According to the magnetic storage structure, the storage states of a plurality of magnetic tunnel junctions can be operated through one spin-orbit moment coupling layer, so that the array density of the magnetic storage structure is effectively improved. In addition, the magnetic storage structure can also improve the sneak current problem and improve the read-write precision of the device.

The present invention belongs to the technical field of magnetic storage. Specifically, the present invention relates to a method and apparatus for generating Skyrmions on the basis of current pulses, and a magnetic field control method and apparatus therefor. The magnetic field control method comprises: acquiring a target sample, wherein the target sample comprises electrodes and a material layer; placing the target sample in a controllable magnetic field, and applying preset current pulses to the electrodes, so as to generate Skyrmions on the material layer on the basis of the controllable magnetic field and the preset current pulses; and controlling the erasure and writing of the Skyrmions by means of the controllable magnetic field. Therefore, the present invention solves the problems in the prior art of techniques being complex and the cost being high.

A magnetic recording medium includes a substrate, an underlayer, a first magnetic layer, and a second magnetic layer in this order. The first magnetic layer includes magnetic grains having a L10 structure, and the second magnetic layer has a granular structure including magnetic grains having a L10 structure, and a grain boundary portion including hexagonal boron nitride. A (111) plane of the magnetic grains included in the first magnetic layer is covered with boron nitride at an interface with the second magnetic layer. The magnetic grains included in the second magnetic layer are epitaxially grown from a (001) plane of the magnetic grains included in the first magnetic layer. The magnetic grains included in the first magnetic layer and the magnetic grains included in the second magnetic layer are columnar crystals penetrating the first magnetic layer and the second magnetic layer, respectively.

Provided is a magnetic storage element comprising a first stack composed of: a storage layer formed from a ferromagnetic body; a first fixed layer formed from a ferromagnetic body; a first spacer layer that is sandwiched by the storage layer and the first fixed layer, and that causes antiferromagnetic exchange coupling between the storage layer and the first fixed layer; and a tunnel barrier layer that is provided to the opposite-side surface of the storage layer from the first spacer layer and that is formed of a non-magnetic body. The first stack is sandwiched by a first electrode and a second electrode.

A magnetic recording medium includes a nonmagnetic substrate, an underlayer disposed above the nonmagnetic substrate, and a magnetic recording layer disposed above the underlayer. The magnetic recording layer includes a first magnetic layer disposed above the underlayer, and a second magnetic layer disposed above the first magnetic layer. Each of the first magnetic layer and the second magnetic layer has a granular structure including magnetic grains having a L10 structure and a grain boundary portion. The grain boundary portion of the first magnetic layer includes aluminum nitride, and the grain boundary portion of the second magnetic layer includes hexagonal boron nitride. An aluminum nitride content in the first magnetic layer is in a range of 15 vol % to 35 vol %, and a peak in a B1s spectrum of the grain boundary portion of the second magnetic layer observed using X-ray photoelectron spectroscopy is 191.6 eV or less.

1. The name of the design product: stackable magnetic storage box (39395). 2. The use of the design product: the design product is used for tool storage. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

A magnetoresistive effect element includes a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another, and a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer. The channel layer includes a first channel layer and a second channel layer, the first channel layer has electrical resistance larger than electrical resistance of the second channel layer, the second terminal is connected to the first channel layer, and the third terminal is connected to the second channel layer, a write current flows between the second terminal and the third terminal via the first channel layer and the second channel layer, and a read current flows between the first terminal and the third terminal.

According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.

1. The name of the design product: side-pull magnetic storage rack. 2. The use of the design product: for storing articles. 3. The design features of the design product: in shape. 4. The picture or photo that best indicates the design features: perspective view.

The invention provides a preparation method of a magnetic storage unit, and the method comprises the steps: providing a substrate which is provided with a bottom electrode; forming a spin orbit moment providing layer, a magnetic tunnel junction lamination layer and a first mask layer on the substrate; patterning the first mask layer, and patterning the magnetic tunnel junction lamination layer and the spin orbit moment providing layer according to the patterned first mask layer to form a first intermediate structure; filling the first intermediate structure with a dielectric material and carrying out planarization processing to form a second intermediate structure; forming a second mask layer on the second intermediate structure; and carrying out patterning on the second mask layer, and carrying out patterning on the magnetic tunnel junction lamination according to the patterned second mask layer. According to the preparation method of the magnetic storage unit, the area of the metal film layer to be etched can be reduced in the etching process of the magnetic tunnel junction, the gas concentration of metal atoms is reduced, and the problem of metal redeposition in the etching process of the magnetic tunnel junction is relieved.

Examples of the present disclosure include a suspension assembly for a magnetic storage device. The suspension assembly includes a load beam and a flexure. The load beam includes a flexure side and a substrate side opposite the flexure side. The load beam also includes a recess formed in the flexure side. The flexure is attached to the flexure side of the load beam at least partially within the recess.

An apparatus for electric power conversion includes a converter having a regulating circuit and switching network. The regulating circuit has magnetic storage elements, and switches connected to the magnetic storage elements and controllable to switch between switching configurations. The regulating circuit maintains an average DC current through a magnetic storage element. The switching network includes charge storage elements connected to switches that are controllable to switch between plural switch configurations. In one configuration, the switches forms an arrangement of charge storage elements in which at least one charge storage element is charged using the magnetic storage element through the network input or output port. In another, the switches form an arrangement of charge storage elements in which an element discharges using the magnetic storage element through one of the input port and output port of the switching network.

The invention discloses magnet inserting equipment, and relates to the technical field of automation equipment, the magnet inserting equipment comprises a machine table, a magnet storage device, a magnet inserting device and a magnet feeding device, the machine table is provided with a magnet storage position, a magnet feeding position and a magnet inserting position which are arranged at intervals, and the magnet inserting position is used for placing a to-be-inserted magnet product; the magnet storage device is arranged at the magnet storage position, the magnet storage device is provided with a magnet storage table, the magnet storage table is used for placing a material frame bearing a plurality of layers of material trays, and a magnet group is placed in each material tray; the magnet inserting device comprises a magnet inserting translation driving piece and a magnet inserting mechanism, the magnet inserting translation driving piece is arranged on the machine table, the magnet inserting mechanism is connected to the output end of the magnet inserting translation driving piece, and the magnet inserting mechanism is used for inserting a magnet into the product containing groove located in the magnet inserting position; the magnet feeding device comprises a magnet moving module and a magnet feeding module which are arranged on the machine table, the magnet moving module is used for transferring the material disc at the magnet storage position to the magnet feeding position, and the magnet feeding module is used for feeding the magnet set at the magnet feeding position to the magnet inserting mechanism. According to the technical scheme, automatic magnet feeding and magnet inserting are achieved, and the production efficiency is improved.

1. Name of the design product: magnetic storage box (2-layer book type) 2. Use of the design product: The design is used for organizing and storing eye shadow, blush and other makeup products. 3. Design points of the design product: in shape. 4. Picture or photo that best indicates the design points: perspective view. 5. Other circumstances that need to be explained: mark A as a mirror material.

A magnetic storage device includes first and second magnetic layers and a non-magnetic layer, where the non-magnetic layer includes a first oxide layer containing magnesium and oxygen, a second oxide layer containing magnesium and oxygen, a third oxide layer containing zinc and oxygen, a fourth oxide layer containing a first predetermined element and oxygen, and a fifth oxide layer containing a second predetermined element and oxygen, and a crystal structure of an oxide of the first predetermined element and a crystal structure of an oxide of the second predetermined element are each a rock salt structure. The first predetermined element and the second predetermined element each have an oxide formation free energy greater than an oxide formation free energy of zinc, and the oxide of the first predetermined element and the oxide of the second predetermined element each have a bandgap narrower than a bandgap of an oxide of magnesium.

Examples of the present disclosure include a suspension assembly for a magnetic storage device. The suspension assembly includes a load beam and a flexure. The load beam includes a flexure side and a base-plate side opposite to the flexure side. The load beam also includes a recess formed in the flexure side. The flexure is attached to the flexure side of the load beam at least partially within the recess.

The embodiment of the invention discloses a read-write head device structure, a magnetic head, a magnetic storage device and electronic equipment. The read-write head device structure comprises a coil and a magnetic path which are stacked on a substrate layer, wherein the coil and the magnetic path are embedded in an insulating dielectric layer; the magnetic path comprises a first magnetic conductive layer and a second magnetic conductive layer, the first magnetic conductive layer is arranged close to the substrate layer, and the second magnetic conductive layer is located on the side, away from the substrate layer, of the first magnetic conductive layer; the coil is spirally wound on the first magnetic conductive layer or the second magnetic conductive layer and is wound layer by layer in the first extending direction of the first magnetic conductive layer or the second magnetic conductive layer. According to the arrangement, the three-dimensional space of the read-write head is fully utilized to form the coil structure, the coil is spirally wound between the first end and the second end of the first magnetic conductive layer or the second magnetic conductive layer, the size of the read-write head device in the extending direction of the read-write surface can be reduced, and the read-write efficiency is improved by improving the magnetic field write-in density and the read-write efficiency. Good magnetic storage performance can be obtained, and the use requirements of different data high-density storage scenes can be met.

The application provides a magnetic storage device based on a multi-ferroelectric heterojunction and a storage information method, and the magnetic storage device based on the multi-ferroelectric heterojunction comprises a ferromagnetic reference layer, a tunneling layer made of ferroelectric material, one side of the tunneling layer is attached to the ferromagnetic reference layer, and the tunneling layer is applied with an external voltage, which is used to reduce the power consumption of the magnetic storage device, a ferromagnetic free layer, one side of which is attached to the other side of the tunneling layer, an anti-ferromagnetic layer made of non-mirror-symmetrical anti-ferromagnetic material, the anti-ferromagnetic layer is attached to the other side of the ferromagnetic free layer, and the anti-ferromagnetic layer is applied with an external charge current, which is used to make the vertical magnetic moment of the ferromagnetic free layer flip to store information. The magnetic storage device provided by the application greatly improves the thermal stability and the writing efficiency, simultaneously simplifies the magnetization flip process, further reduces the size and the power consumption, and provides technical support for the next generation of new storage devices with high performance and low power consumption.

The application relates to the technical field of magnetic storage, and discloses a magnetic recording device, which comprises a substrate and a strip-shaped information storage layer. The substrate comprises a base made of a flexible material, and the strip-shaped information storage layer comprises a plurality of ferromagnetic layers made of ferromagnetic material and a plurality of interval layers made of non-magnetic material, the interval layers are located between the ferromagnetic layers, and the ferromagnetic layers and the interval layers are alternately stacked on the substrate. Since the magnetization direction of each ferromagnetic layer can be changed through writing, the proportion of different magnetization directions of the ferromagnetic layers in the strip-shaped information storage layer can be changed to represent different data storage states by adjusting the energy level of an energy auxiliary device of a magnetic field writing head, the magnetization direction of the corresponding layers of ferromagnetic layers is flipped, multi-state storage is realized, the storage density is improved, and the upper limit of the data storage capacity is improved. The application further discloses a magnetic storage device.

Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnesium oxide (MgO). A cation can be added to allow the magnesium to hold onto the nitrogen dopant without highly oxidizing or nitriding the cation. The resulting nitrogen doped MgXO, where X is the cation, has a lower bandgap compared to a much similar barrier layer that has neither nitrogen nor a cation thus improving thermal and electrical reliabilities. The nitrogen doped MgXO is non-stoichiometric whereas comparably, an oxynitride is stoichiometric. Example cations that may be used include aluminum, titanium, vanadium, chromium, and scandium.

To solve the problem that there is anxiety about the speed of obtaining the result of a dice and stability after obtaining the result. In addition, a dice having a circular shape when viewed from the bottom has problems in many aspects such as time and cost until a result is determined and stability of the result, and such a shape has not been used for a dice.SOLUTION: A weight is put in a dice to enable anyone to quickly know the result, and the weight is put in to make it difficult to directly or indirectly intervene in the obtained rolled number. Improved magnetic storage, reduced risk of loss, and a new toy orientation are also provided.SELECTED DRAWING: Figure 1

A magnetic storage device, comprising a storage main body (1). The storage main body (1) is provided with at least one stacking surface (11), so that two or more storage main bodies (1) can be stacked by means of the stacking surfaces (11); and magnetic components capable of attracting each other are mounted on the stacking surfaces (11) of two adjacent stacked storage main bodies (1).

The application relates to the field of magnetic storage, in particular to a magnetic storage device, which comprises a fixed layer, a channel isolation layer and a free layer; the channel isolation layer is located between the fixed layer and the free layer; further comprising a non-magnetic layer, which is located on the free layer, and the material of the non-magnetic layer is different from that of the free layer. The application can effectively reduce the critical current for changing the magnetization direction of the free layer of the MTJ and reduce the volume of the magnetic storage device.

The invention discloses an all-optomagnetic turnover magnetic film as well as a preparation method and application thereof. The all-optical magnetic turnover magnetic film comprises a Ta layer, a first Pt layer, a Co layer, a Ru layer, a Gd layer and a second Pt layer which are sequentially stacked on the surface of a substrate, wherein the thickness of the Ru layer is 0.8 nm, 1.3 nm or 1.5 nm. The preparation method of the all-optical magnetic flipping magnetic film comprises the following steps: sequentially depositing a Ta layer, a first Pt layer, a Co layer, a Ru layer, a Gd layer and a second Pt layer on the surface of a substrate by adopting ultrahigh vacuum direct current magnetron sputtering to obtain the all-optical magnetic flipping magnetic film. The all-optical magnetic flipping magnetic film has the advantages of high switching efficiency, low switching energy, wide energy window, easiness in regulation and control, stability in repeated writing and the like, can be applied to the fields of high-density ultrafast magnetic storage, information processing and the like, and is suitable for large-scale application.

Magnetic storage devices, methods of manufacturing the same, and storage devices including the same are provided. A magnetic storage device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistive layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer the spin current generated from the SOT generation layer to the free layer.

The application relates to a two-dimensional ferromagnetic material and a preparation method of a Hall device, and belongs to the technical field of electronic materials. 0.29 TaS2, electrode preparation through ultraviolet lithography and magnetron sputtering, and Hall device preparation through mechanical peeling and transferring. Single-crystal Fe 0.29 The preparation method of the single-crystal Fe TaS2 is not only high in efficiency, but also has less iodine and impurities remaining on the single-crystal surface. The prepared Hall device exhibits good ferromagnetism and air stability. Under the action of an applied magnetic field, a huge topological Hall effect can be observed in the Hall device. Notably, even after relaxation effect measurement, the topological Hall effect still stably exists, showing excellent stability and reliability. The "robust" chiral spin texture brought by the huge topological Hall effect has application value in the fields of magnetic storage and magnetic information transmission.