384 results about "Magnetic storage" patented technology

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

The invention provides a data management method and system based on optomagnetic fusion storage, and belongs to the field of data management.The method comprises the steps that target data are obtained, data feature information is collected, and data popularity analysis is carried out; a basic storage scheme is determined according to data popularity, and intelligent decision-making of optical storage, magnetic storage or fusion storage is realized through data criticality analysis and popularity critical coefficient evaluation; predicting a storage loss parameter according to the data popularity and the storage scheme, and optimizing an error correction code or erasure code parameter in combination with the data criticality; and finally, implementing data management according to the determined storage scheme and optimization parameters. The technical problems that a traditional storage system cannot intelligently distribute storage media according to data characteristics, and access efficiency and storage safety are difficult to balance are solved, self-adaptive selection of a storage scheme and optimization of storage quality are achieved, and efficiency and reliability of data management are improved.

The present disclosure describes aspects of codeword interleaving over magnetic media surfaces. In some aspects, segments of a codeword are spread or interleaved across multiple surfaces of magnetic storage media. Data for one or more codewords may be received by a read / write channel and, for each codeword, a respective index is selected, received, or generated. The index may indicate which sector partitions of the multiple surfaces that segments of one of the codewords are to be written. The data of the codewords can be segmented and then arranged in an interleaver based on the respective index to which the codeword corresponds. The codeword segments are written from the interleaver to sectors of the multiple surfaces of the magnetic media. By so doing, codewords may be spread across multiple surfaces, such that a loss of a portion of a segment track does not prevent readback and decoding of the codewords.

A magnetic recording medium includes a substrate, an underlayer, a first magnetic layer, and a second magnetic layer in this order. The first magnetic layer includes magnetic grains having a L10 structure, and the second magnetic layer has a granular structure including magnetic grains having a L10 structure, and a grain boundary portion including hexagonal boron nitride. A (111) plane of the magnetic grains included in the first magnetic layer is covered with boron nitride at an interface with the second magnetic layer. The magnetic grains included in the second magnetic layer are epitaxially grown from a (001) plane of the magnetic grains included in the first magnetic layer. The magnetic grains included in the first magnetic layer and the magnetic grains included in the second magnetic layer are columnar crystals penetrating the first magnetic layer and the second magnetic layer, respectively.

The present invention provides a magnetic suction storage device that is adsorbed on a mobile device. A first through hole and a second through hole are drilled through one side of a first housing of the magnetic storage device, and a first magnetic element is disposed on the inside of the first housing, a base plate of a storage module is disposed above one of the first magnetic components, and a storage element, a first control element and a second control element are disposed above the base plate. An outer edge of the substrate is provided with a first connection port and a second connection port, and an outer edge of a second shell is connected to an outer edge of the first shell, so that the second shell and the first shell The body covers the first magnetic component and the storage module.

According to one embodiment, a magnetic memory includes: a magnet configured to store data and shift the data from a first area to a second area by domain wall movement caused by a shift operation; an interconnect spaced apart from the magnet and configured to apply a write field to the magnet at a time of a write operation; and a control circuit configured to cause a shift current for shifting the data to flow in the magnet and to cause a write current for generating the write field to flow in the interconnect, wherein the write current includes a first pulse supplied to the interconnect and a second pulse supplied to the interconnect after the first pulse, and a pulse width of the second pulse is smaller than a pulse width of the first pulse.

The present invention comprises: a ferromagnetic body 10 that exhibits an anomalous Hall effect; a first current terminal and a second current terminal (I+, I-) that supply an electrical current to the ferromagnetic body 10; a first voltage terminal and a second voltage terminal (V+, V-) that detect a voltage generated in the ferromagnetic body 10; and a resistance adjustment layer that lies either at an interface between the first current terminal / second current terminal and the ferromagnetic body, or between the first voltage terminal / second voltage terminal and the ferromagnetic body. The resistance adjustment layer includes a high-resistance region and a low-resistance region. The low-resistance region electrically conducts between the first current terminal / second current terminal and the ferromagnetic body, or between the first voltage terminal / second voltage terminal and the ferromagnetic body.

The present disclosure describes aspects of health management for magnetic storage media. In some aspects, a media health manager determines, with a read channel, read metrics for a sector of magnetic storage media that resides in a zone of magnetic storage media. The media health manager accesses read metrics of the zone and updates the read metrics of the zone based on the read metrics determined for the sector to provide updated read metrics for the zone of magnetic storage media. A health score for the zone of magnetic storage media is then determined with a neural network based on the updated read metrics of the zone of magnetic storage media. By so doing, gradual wear of the magnetic storage media may be predicted using the health score, enabling replacement of a magnetic storage media device before failure to improve reliability or availability of data stored to the device.

The invention provides a Mn2Sb-based alloy single crystal and a preparation method and application thereof, and the preparation method of the Mn2Sb-based alloy single crystal comprises the following steps: S1, weighing; s2, pipe sealing; s3, smelting is conducted; s4, oscillating and cooling; s5, cooling; and S6, quenching. According to the method for preparing the Mn2Sb-based alloy single crystal, the steps are simple, the growth period is short, the success rate is high, the obtained single crystal is free of impurity phases, high in quality, good in integrity and large in size, the method can be widely applied to multiple fields of magnetic refrigeration, magnetic storage, magnetic sensing and the like with higher requirements, and meanwhile the problem that the impurity phases exist when Mn2Sb-based alloy is prepared in the prior art is effectively avoided.

The invention discloses a multi-layer thin film structure capable of achieving vertical exchange bias and free of external field auxiliary total current overturning and a preparation method and application thereof, the multi-layer thin film structure sequentially comprises a heavy metal base layer, an atomic level intercalation layer, a ferromagnetic layer and an antiferromagnetic layer from bottom to top, and the multi-layer thin film structure is prepared through molecular beam epitaxy. According to the invention, anisotropic epitaxial strain is introduced into the antiferromagnetic layer, so that a remarkable vertical exchange bias effect at room temperature is realized. Meanwhile, a global uncompensated magnetic moment is generated in the anisotropic epitaxial strain induction antiferromagnetic layer, an energy barrier of vertical exchange bias flipping is reduced, current-driven exchange bias flipping without an external field is further realized through a spin-orbit moment effect, the dependence on an external magnetic field in the prior art is overcome, and the performance of the device is improved. And the integration and the application potential of the spinning electronic device are obviously improved. The technology lays a foundation for design and development of efficient and high-density magnetic storage and logic devices.

The present invention relates to the technical field of magnetic attraction lines, and in particular, to a magnetic attraction line convenient to store, including a line body and a connector, where line cores are connected into the line body, outer surfaces of the line cores are covered with an injection molding layer, an outer surface of the injection molding layer is coated with a magnetic attraction layer, an outer surface of the magnetic attraction layer is coated with a protection layer, and an isolation and protection layer is disposed between the magnetic attraction layer and the injection molding layer. Through a coating connection between the magnetic attraction layer and the injection molding layer, and under the action of the magnetic attraction layer, a magnetic attraction connection effect of the line bodies is achieved, and then a magnetic storage effect of the line bodies is achieved.

A ramp support for a magnetic storage device includes a first ramp, having a first-ramp receiving end and a first-ramp surface, and a second ramp, having a second-ramp receiving end, offset laterally from the first-ramp receiving end, and a second-ramp surface. A first first-ramp portion faces and is angled toward a virtual plane. A second first-ramp portion faces and is angled away from the virtual plane. A third first-ramp portion faces and is angled toward the virtual plane. A first second-ramp portion faces and is angled toward the virtual plane, and a second second-ramp portion faces and is angled away from the virtual plane. In the direction along the virtual plane, the first second-ramp portion extends further than the first first-ramp portion and terminates at the same location relative to the plane as the second second-ramp portion, and the third first-ramp portion extends further than the second second-ramp portion.

The utility model provides a magnetic storage device which is adsorbed on a mobile device, one side of a first shell of the magnetic storage device is provided with a first through hole and a second through hole in a penetrating mode, a first magnetic piece is arranged on one inner side of the first shell, a substrate of a storage module is arranged above the first magnetic piece, and the first magnetic piece is provided with a first through hole and a second through hole. A storage element, a first control element and a second control element are arranged above the base plate, a first port and a second port are formed in the outer edge of the base plate, and the outer edge of a second shell is connected with the outer edge of the first shell, so that the second shell and the first shell wrap the first magnetic attraction part and the storage module; wherein the first magnetic attraction piece attracts the mobile device, so that the magnetic attraction storage device is fixed on the mobile device.

The embodiment of the invention provides a physical unclonable function generator and a true random number generator. The physical unclonable function generator comprises a storage array and a control unit, a storage unit in the storage array comprises a magnetic storage device, and the magnetic storage device comprises a magnetic tunnel junction; the control unit is used for controlling the application of a magnetic field along a target direction to the storage array, and reading the resistance state of the storage unit to generate a physical unclonable function after the application of the magnetic field is stopped; wherein the target direction is perpendicular to or approximately perpendicular to the magnetic moment direction of the free layer in the magnetic tunnel junction in the in-plane direction, and the randomness and uniformity of the physical unclonable function are improved.

The invention provides a magnetic storage element and a manufacturing method thereof, relates to the technical field of semiconductors, and is used for solving the problem of low overturning efficiency of a free layer in the prior art. The magnetic storage element comprises a substrate, a spacing layer, a spin orbit moment layer and a magnetic tunnel junction which are sequentially stacked from bottom to top, and a first ferromagnetic structure and a second ferromagnetic structure which are independently arranged on two side walls of the spacing layer, the first ferromagnetic layer in the first ferromagnetic structure and the second ferromagnetic layer in the second ferromagnetic structure are opposite in magnetic moment direction, so that stray fields in opposite directions can be generated; the top surfaces of the first ferromagnetic structure and the second ferromagnetic structure are not higher than the top surface of the spin orbit moment layer and are electrically connected with the spin orbit moment layer to form a write-in path, and when write-in current flows through the first ferromagnetic structure or the second ferromagnetic structure, a stray field generated by the ferromagnetic structure through which the write-in current flows is weakened; a stray field generated by the ferromagnetic structure through which the write-in current does not flow assists the free layer in overturning, and the overturning efficiency of the free layer can be improved.

The invention discloses a quaternary ferrocolumbium cobalt sulfide crystal, a preparation method and application, and belongs to the technical field of magnetic materials, the quaternary ferrocolumbium cobalt sulfide crystal has remarkable in-plane and out-of-plane magnetic anisotropy, and the chemical general formula of the quaternary ferrocolumbium cobalt sulfide crystal is Nb3 (Fe, Co) S6; the preparation method comprises the following steps: (1) preparing and packaging raw materials; (2) vacuum packaging; (3) carrying out CVT reaction; and (4) cooling and sampling. An improved double-temperature-zone chemical vapor transport (CVT) method is adopted, and a proper transport agent is selected, so that a multi-component raw material can be transported and recrystallized in a gaseous form at a relatively low temperature, and a single crystal with uniform components and a complete structure is obtained. The material can be applied to spintronics devices, high-density magnetic storage units and magnetic sensors; and a new platform is provided for researching complex magnetic interaction, magnetic anisotropy sources, potential superconductivity, topological properties and the like.

The invention discloses a FeCoNbW alloy target material and a hot-pressing preparation method thereof, and belongs to the technical field of magnetic storage target material manufacturing. The method comprises the following steps: carrying out vacuum melting on Fe blocks, Co blocks and Nb blocks, and then carrying out gas atomization to obtain FeCoNb alloy powder; the FeCoNbW alloy target material is obtained by mixing the FeCoNbW alloy powder and W powder, and then sequentially carrying out sheathing, die filling, degassing, hot pressed sintering and machining on the FeCoNbW alloy powder and the W powder. The W powder is added into the FeCoNb alloy powder to be combined into mixed powder of target components, the FeCoNb alloy powder forms metal alloy due to the components, demagnetization can be achieved, and the final magnetic permeability of the target material is improved. And then target blank sintering is conducted in a vacuum hot pressing sintering mode, the problems that components are not uniform, the target blank cracks during conventional plastic deformation and the magnetic permeability is low are solved, and the yield of the FeCoNbW alloy target is effectively increased.

The invention provides a magnetic storage structure and a preparation method thereof, electronic equipment and a read-write method. The magnetic storage structure comprises a spin-orbit moment coupling layer and a plurality of magnetic storage elements. Wherein each magnetic storage element comprises a magnetic tunnel junction and a one-way conducting piece, the magnetic tunnel junctions in the multiple magnetic storage elements are arranged on the spin orbit moment coupling layer in parallel, and the one-way conducting pieces are connected to the sides, away from the spin orbit moment coupling layer, of the magnetic tunnel junctions. According to the magnetic storage structure, the storage states of a plurality of magnetic tunnel junctions can be operated through one spin-orbit moment coupling layer, so that the array density of the magnetic storage structure is effectively improved. In addition, the magnetic storage structure can also improve the sneak current problem and improve the read-write precision of the device.

The present invention belongs to the technical field of magnetic storage. Specifically, the present invention relates to a method and apparatus for generating Skyrmions on the basis of current pulses, and a magnetic field control method and apparatus therefor. The magnetic field control method comprises: acquiring a target sample, wherein the target sample comprises electrodes and a material layer; placing the target sample in a controllable magnetic field, and applying preset current pulses to the electrodes, so as to generate Skyrmions on the material layer on the basis of the controllable magnetic field and the preset current pulses; and controlling the erasure and writing of the Skyrmions by means of the controllable magnetic field. Therefore, the present invention solves the problems in the prior art of techniques being complex and the cost being high.

A first circuit outputs first information indicating presence / absence of a magnetic wall between two adjacent portions among portions of a magnetic body, and second information based on the combination of magnetization states of the two portions. A first storage circuit stores first bits corresponding to the portions. A most significant bit of the first bits has a value independent of a magnetization state of a corresponding one of the portions, and the first bits have a value based on the first information. A second storage circuit stores the second information. The second circuit causes the first storage circuit to output the first bits when a value of a least significant bit of the first bits matches a value of the second information, and otherwise third bits having inverse values of the first bits.

The utility model relates to the field of digital product auxiliary parts, in particular to a magnetic absorption data line with a silica gel layer. In order to solve the problem that a data line is inconvenient to store, the data line is messy in a storage state, not only occupies a larger storage space, but also is inconvenient to use. The data line body is sleeved with the silica gel sleeve layer, the data line body can be protected, damage to the surface of the data line body is avoided, the magnetic attraction assembly is arranged on the surface of the silica gel sleeve layer, the two storage blocks are matched, and the clamping sleeves are arranged in the clamping grooves formed in the surfaces of the storage blocks; the data line bodies are arranged between the storage blocks in a U-shaped structure through the magnetic attraction blocks mounted on the surface of the clamping sleeve, so that the storage attractiveness of the data line bodies is improved, the space occupancy rate is reduced, use and storage are convenient and simple, and the use experience is good; and in the using process, the two storage blocks can be further fixed, and the stabilizing effect is further improved.

The invention provides a preparation method of a magnetic storage unit, and the method comprises the steps: providing a substrate which comprises a magnetic storage unit bottom electrode; preparing a magnetic tunnel junction lamination layer on the bottom electrode, and obtaining more than one actual parameter of the magnetic tunnel junction lamination layer; comparing the actual parameter with a corresponding first preset parameter, and determining a comparison result; determining process parameters of a reference resistor corresponding to the magnetic tunnel junction lamination according to the comparison result; and forming the reference resistor according to the determined process parameters. According to the preparation method of the magnetic storage unit, the process parameters of the reference resistor needing to be prepared can be determined through the actual parameters after the magnetic tunnel lamination is prepared, so that the resistance value of the reference resistor is effectively controlled, and a sufficient read-out window is provided for the magnetic tunnel junction unit.

A magnetic recording medium includes a substrate, an underlayer, a first magnetic layer, and a second magnetic layer in this order. The first magnetic layer includes magnetic grains having a L10 structure, and the second magnetic layer has a granular structure including magnetic grains having a L10 structure, and a grain boundary portion including hexagonal boron nitride. A (111) plane of the magnetic grains included in the first magnetic layer is covered with boron nitride at an interface with the second magnetic layer. The magnetic grains included in the second magnetic layer are epitaxially grown from a (001) plane of the magnetic grains included in the first magnetic layer. The magnetic grains included in the first magnetic layer and the magnetic grains included in the second magnetic layer are columnar crystals penetrating the first magnetic layer and the second magnetic layer, respectively.

Provided is a magnetic storage element comprising a first stack composed of: a storage layer formed from a ferromagnetic body; a first fixed layer formed from a ferromagnetic body; a first spacer layer that is sandwiched by the storage layer and the first fixed layer, and that causes antiferromagnetic exchange coupling between the storage layer and the first fixed layer; and a tunnel barrier layer that is provided to the opposite-side surface of the storage layer from the first spacer layer and that is formed of a non-magnetic body. The first stack is sandwiched by a first electrode and a second electrode.

A magnetic recording medium includes a nonmagnetic substrate, an underlayer disposed above the nonmagnetic substrate, and a magnetic recording layer disposed above the underlayer. The magnetic recording layer includes a first magnetic layer disposed above the underlayer, and a second magnetic layer disposed above the first magnetic layer. Each of the first magnetic layer and the second magnetic layer has a granular structure including magnetic grains having a L10 structure and a grain boundary portion. The grain boundary portion of the first magnetic layer includes aluminum nitride, and the grain boundary portion of the second magnetic layer includes hexagonal boron nitride. An aluminum nitride content in the first magnetic layer is in a range of 15 vol % to 35 vol %, and a peak in a B1s spectrum of the grain boundary portion of the second magnetic layer observed using X-ray photoelectron spectroscopy is 191.6 eV or less.

1. The name of the design product: stackable magnetic storage box (39395). 2. The use of the design product: the design product is used for tool storage. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

A method for increasing readout speed of information encoded on magnetic storage media uses contactless circularly polarized X-rays, allowing real-time, high-fidelity readout. Magnetic information is encoded by magnetization value and direction stored on magnetic tapes or disk drives. The method includes providing first c+ and second c− circularly polarized X-ray beams, orienting the first and second X-ray beams towards the magnetic tape, simultaneously reading out the first and second X-ray beams after passage through the same region of the magnetic tape while advancing the magnetic tape, and determining magnetic information by the difference between two readout signals from the first and second x-ray beams based on X-ray magnetic circular dichroism. Based on beam splitting, real-time readout of the magnetic signal stored on the magnetic tape is achievable by intensity signal evaluation for the first and second X-ray beams.

A magnetoresistive effect element includes a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another, and a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer. The channel layer includes a first channel layer and a second channel layer, the first channel layer has electrical resistance larger than electrical resistance of the second channel layer, the second terminal is connected to the first channel layer, and the third terminal is connected to the second channel layer, a write current flows between the second terminal and the third terminal via the first channel layer and the second channel layer, and a read current flows between the first terminal and the third terminal.

To provide a magnetic memory with a small number of error bits.SOLUTION: A flow of data reading by a magnetic memory includes: setting a temporary value at a first bit of temporarily read data in a data latch 31; shifting a magnetic wall and moving a next reading target memory cell to a reading position when the acquisition of temporarily read data for all reading target memory cells has not been completed yet; determining the presence or absence of a magnetic wall between the memory cells; setting, at the first bit of the temporarily read data, the same value as a second bit; shifting the bit of the temporarily read data towards an upper bit side by one bit when the magnetic wall has been detected; setting, at the first bit, a value opposite to the value of the second bit; and using magnetization information to update a value of a magnetization information latch with a value based on a type of a change in the detected magnetic wall. When the acquisition of the temporarily read data has been completed for all the reading target memory cells, magnetization resolution is performed.SELECTED DRAWING: Figure 15

Provided is a storage device that has a computation function and comprises: a plurality of differential logic tree cells; a plurality of digital differential sense amplifiers for respectively reading the computation results of the plurality of differential logic tree cells; a plurality of write circuits for writing data to each of the plurality of differential logic tree cells; and a digital computation circuit for performing computations by using the computation results from the plurality of digital differential sense amplifiers. Each differential logic tree cell includes: a memory cell which includes first and second magnetic storage elements for storing the data based on a change in a resistance value; and a differential logic circuit for performing logical computations by using the data stored in the memory cell and external data input from the outside.