294 results about "Magnetic storage" patented technology

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

The invention provides a data management method and system based on optomagnetic fusion storage, and belongs to the field of data management.The method comprises the steps that target data are obtained, data feature information is collected, and data popularity analysis is carried out; a basic storage scheme is determined according to data popularity, and intelligent decision-making of optical storage, magnetic storage or fusion storage is realized through data criticality analysis and popularity critical coefficient evaluation; predicting a storage loss parameter according to the data popularity and the storage scheme, and optimizing an error correction code or erasure code parameter in combination with the data criticality; and finally, implementing data management according to the determined storage scheme and optimization parameters. The technical problems that a traditional storage system cannot intelligently distribute storage media according to data characteristics, and access efficiency and storage safety are difficult to balance are solved, self-adaptive selection of a storage scheme and optimization of storage quality are achieved, and efficiency and reliability of data management are improved.

The present invention provides a magnetic suction storage device that is adsorbed on a mobile device. A first through hole and a second through hole are drilled through one side of a first housing of the magnetic storage device, and a first magnetic element is disposed on the inside of the first housing, a base plate of a storage module is disposed above one of the first magnetic components, and a storage element, a first control element and a second control element are disposed above the base plate. An outer edge of the substrate is provided with a first connection port and a second connection port, and an outer edge of a second shell is connected to an outer edge of the first shell, so that the second shell and the first shell The body covers the first magnetic component and the storage module.

According to one embodiment, a magnetic memory includes: a magnet configured to store data and shift the data from a first area to a second area by domain wall movement caused by a shift operation; an interconnect spaced apart from the magnet and configured to apply a write field to the magnet at a time of a write operation; and a control circuit configured to cause a shift current for shifting the data to flow in the magnet and to cause a write current for generating the write field to flow in the interconnect, wherein the write current includes a first pulse supplied to the interconnect and a second pulse supplied to the interconnect after the first pulse, and a pulse width of the second pulse is smaller than a pulse width of the first pulse.

The invention discloses a multi-layer thin film structure capable of achieving vertical exchange bias and free of external field auxiliary total current overturning and a preparation method and application thereof, the multi-layer thin film structure sequentially comprises a heavy metal base layer, an atomic level intercalation layer, a ferromagnetic layer and an antiferromagnetic layer from bottom to top, and the multi-layer thin film structure is prepared through molecular beam epitaxy. According to the invention, anisotropic epitaxial strain is introduced into the antiferromagnetic layer, so that a remarkable vertical exchange bias effect at room temperature is realized. Meanwhile, a global uncompensated magnetic moment is generated in the anisotropic epitaxial strain induction antiferromagnetic layer, an energy barrier of vertical exchange bias flipping is reduced, current-driven exchange bias flipping without an external field is further realized through a spin-orbit moment effect, the dependence on an external magnetic field in the prior art is overcome, and the performance of the device is improved. And the integration and the application potential of the spinning electronic device are obviously improved. The technology lays a foundation for design and development of efficient and high-density magnetic storage and logic devices.

The present invention relates to the technical field of magnetic attraction lines, and in particular, to a magnetic attraction line convenient to store, including a line body and a connector, where line cores are connected into the line body, outer surfaces of the line cores are covered with an injection molding layer, an outer surface of the injection molding layer is coated with a magnetic attraction layer, an outer surface of the magnetic attraction layer is coated with a protection layer, and an isolation and protection layer is disposed between the magnetic attraction layer and the injection molding layer. Through a coating connection between the magnetic attraction layer and the injection molding layer, and under the action of the magnetic attraction layer, a magnetic attraction connection effect of the line bodies is achieved, and then a magnetic storage effect of the line bodies is achieved.

A ramp support for a magnetic storage device includes a first ramp, having a first-ramp receiving end and a first-ramp surface, and a second ramp, having a second-ramp receiving end, offset laterally from the first-ramp receiving end, and a second-ramp surface. A first first-ramp portion faces and is angled toward a virtual plane. A second first-ramp portion faces and is angled away from the virtual plane. A third first-ramp portion faces and is angled toward the virtual plane. A first second-ramp portion faces and is angled toward the virtual plane, and a second second-ramp portion faces and is angled away from the virtual plane. In the direction along the virtual plane, the first second-ramp portion extends further than the first first-ramp portion and terminates at the same location relative to the plane as the second second-ramp portion, and the third first-ramp portion extends further than the second second-ramp portion.

The embodiment of the invention provides a physical unclonable function generator and a true random number generator. The physical unclonable function generator comprises a storage array and a control unit, a storage unit in the storage array comprises a magnetic storage device, and the magnetic storage device comprises a magnetic tunnel junction; the control unit is used for controlling the application of a magnetic field along a target direction to the storage array, and reading the resistance state of the storage unit to generate a physical unclonable function after the application of the magnetic field is stopped; wherein the target direction is perpendicular to or approximately perpendicular to the magnetic moment direction of the free layer in the magnetic tunnel junction in the in-plane direction, and the randomness and uniformity of the physical unclonable function are improved.

The invention provides a magnetic storage element and a manufacturing method thereof, relates to the technical field of semiconductors, and is used for solving the problem of low overturning efficiency of a free layer in the prior art. The magnetic storage element comprises a substrate, a spacing layer, a spin orbit moment layer and a magnetic tunnel junction which are sequentially stacked from bottom to top, and a first ferromagnetic structure and a second ferromagnetic structure which are independently arranged on two side walls of the spacing layer, the first ferromagnetic layer in the first ferromagnetic structure and the second ferromagnetic layer in the second ferromagnetic structure are opposite in magnetic moment direction, so that stray fields in opposite directions can be generated; the top surfaces of the first ferromagnetic structure and the second ferromagnetic structure are not higher than the top surface of the spin orbit moment layer and are electrically connected with the spin orbit moment layer to form a write-in path, and when write-in current flows through the first ferromagnetic structure or the second ferromagnetic structure, a stray field generated by the ferromagnetic structure through which the write-in current flows is weakened; a stray field generated by the ferromagnetic structure through which the write-in current does not flow assists the free layer in overturning, and the overturning efficiency of the free layer can be improved.

The invention discloses a quaternary ferrocolumbium cobalt sulfide crystal, a preparation method and application, and belongs to the technical field of magnetic materials, the quaternary ferrocolumbium cobalt sulfide crystal has remarkable in-plane and out-of-plane magnetic anisotropy, and the chemical general formula of the quaternary ferrocolumbium cobalt sulfide crystal is Nb3 (Fe, Co) S6; the preparation method comprises the following steps: (1) preparing and packaging raw materials; (2) vacuum packaging; (3) carrying out CVT reaction; and (4) cooling and sampling. An improved double-temperature-zone chemical vapor transport (CVT) method is adopted, and a proper transport agent is selected, so that a multi-component raw material can be transported and recrystallized in a gaseous form at a relatively low temperature, and a single crystal with uniform components and a complete structure is obtained. The material can be applied to spintronics devices, high-density magnetic storage units and magnetic sensors; and a new platform is provided for researching complex magnetic interaction, magnetic anisotropy sources, potential superconductivity, topological properties and the like.

The invention provides a magnetic storage structure and a preparation method thereof, electronic equipment and a read-write method. The magnetic storage structure comprises a spin-orbit moment coupling layer and a plurality of magnetic storage elements. Wherein each magnetic storage element comprises a magnetic tunnel junction and a one-way conducting piece, the magnetic tunnel junctions in the multiple magnetic storage elements are arranged on the spin orbit moment coupling layer in parallel, and the one-way conducting pieces are connected to the sides, away from the spin orbit moment coupling layer, of the magnetic tunnel junctions. According to the magnetic storage structure, the storage states of a plurality of magnetic tunnel junctions can be operated through one spin-orbit moment coupling layer, so that the array density of the magnetic storage structure is effectively improved. In addition, the magnetic storage structure can also improve the sneak current problem and improve the read-write precision of the device.

The present invention belongs to the technical field of magnetic storage. Specifically, the present invention relates to a method and apparatus for generating Skyrmions on the basis of current pulses, and a magnetic field control method and apparatus therefor. The magnetic field control method comprises: acquiring a target sample, wherein the target sample comprises electrodes and a material layer; placing the target sample in a controllable magnetic field, and applying preset current pulses to the electrodes, so as to generate Skyrmions on the material layer on the basis of the controllable magnetic field and the preset current pulses; and controlling the erasure and writing of the Skyrmions by means of the controllable magnetic field. Therefore, the present invention solves the problems in the prior art of techniques being complex and the cost being high.

The invention provides a preparation method of a magnetic storage unit, and the method comprises the steps: providing a substrate which comprises a magnetic storage unit bottom electrode; preparing a magnetic tunnel junction lamination layer on the bottom electrode, and obtaining more than one actual parameter of the magnetic tunnel junction lamination layer; comparing the actual parameter with a corresponding first preset parameter, and determining a comparison result; determining process parameters of a reference resistor corresponding to the magnetic tunnel junction lamination according to the comparison result; and forming the reference resistor according to the determined process parameters. According to the preparation method of the magnetic storage unit, the process parameters of the reference resistor needing to be prepared can be determined through the actual parameters after the magnetic tunnel lamination is prepared, so that the resistance value of the reference resistor is effectively controlled, and a sufficient read-out window is provided for the magnetic tunnel junction unit.

A magnetic recording medium includes a substrate, an underlayer, a first magnetic layer, and a second magnetic layer in this order. The first magnetic layer includes magnetic grains having a L10 structure, and the second magnetic layer has a granular structure including magnetic grains having a L10 structure, and a grain boundary portion including hexagonal boron nitride. A (111) plane of the magnetic grains included in the first magnetic layer is covered with boron nitride at an interface with the second magnetic layer. The magnetic grains included in the second magnetic layer are epitaxially grown from a (001) plane of the magnetic grains included in the first magnetic layer. The magnetic grains included in the first magnetic layer and the magnetic grains included in the second magnetic layer are columnar crystals penetrating the first magnetic layer and the second magnetic layer, respectively.

Provided is a magnetic storage element comprising a first stack composed of: a storage layer formed from a ferromagnetic body; a first fixed layer formed from a ferromagnetic body; a first spacer layer that is sandwiched by the storage layer and the first fixed layer, and that causes antiferromagnetic exchange coupling between the storage layer and the first fixed layer; and a tunnel barrier layer that is provided to the opposite-side surface of the storage layer from the first spacer layer and that is formed of a non-magnetic body. The first stack is sandwiched by a first electrode and a second electrode.

A magnetic recording medium includes a nonmagnetic substrate, an underlayer disposed above the nonmagnetic substrate, and a magnetic recording layer disposed above the underlayer. The magnetic recording layer includes a first magnetic layer disposed above the underlayer, and a second magnetic layer disposed above the first magnetic layer. Each of the first magnetic layer and the second magnetic layer has a granular structure including magnetic grains having a L10 structure and a grain boundary portion. The grain boundary portion of the first magnetic layer includes aluminum nitride, and the grain boundary portion of the second magnetic layer includes hexagonal boron nitride. An aluminum nitride content in the first magnetic layer is in a range of 15 vol % to 35 vol %, and a peak in a B1s spectrum of the grain boundary portion of the second magnetic layer observed using X-ray photoelectron spectroscopy is 191.6 eV or less.

1. The name of the design product: stackable magnetic storage box (39395). 2. The use of the design product: the design product is used for tool storage. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

A magnetoresistive effect element includes a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another, and a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer. The channel layer includes a first channel layer and a second channel layer, the first channel layer has electrical resistance larger than electrical resistance of the second channel layer, the second terminal is connected to the first channel layer, and the third terminal is connected to the second channel layer, a write current flows between the second terminal and the third terminal via the first channel layer and the second channel layer, and a read current flows between the first terminal and the third terminal.

Provided is a storage device that has a computation function and comprises: a plurality of differential logic tree cells; a plurality of digital differential sense amplifiers for respectively reading the computation results of the plurality of differential logic tree cells; a plurality of write circuits for writing data to each of the plurality of differential logic tree cells; and a digital computation circuit for performing computations by using the computation results from the plurality of digital differential sense amplifiers. Each differential logic tree cell includes: a memory cell which includes first and second magnetic storage elements for storing the data based on a change in a resistance value; and a differential logic circuit for performing logical computations by using the data stored in the memory cell and external data input from the outside.

According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.

1. The name of the design product: side-pull magnetic storage rack. 2. The use of the design product: for storing articles. 3. The design features of the design product: in shape. 4. The picture or photo that best indicates the design features: perspective view.

The invention provides a preparation method of a magnetic storage unit, and the method comprises the steps: providing a substrate which is provided with a bottom electrode; forming a spin orbit moment providing layer, a magnetic tunnel junction lamination layer and a first mask layer on the substrate; patterning the first mask layer, and patterning the magnetic tunnel junction lamination layer and the spin orbit moment providing layer according to the patterned first mask layer to form a first intermediate structure; filling the first intermediate structure with a dielectric material and carrying out planarization processing to form a second intermediate structure; forming a second mask layer on the second intermediate structure; and carrying out patterning on the second mask layer, and carrying out patterning on the magnetic tunnel junction lamination according to the patterned second mask layer. According to the preparation method of the magnetic storage unit, the area of the metal film layer to be etched can be reduced in the etching process of the magnetic tunnel junction, the gas concentration of metal atoms is reduced, and the problem of metal redeposition in the etching process of the magnetic tunnel junction is relieved.

A magnetic storage element according to one embodiment of the present disclosure comprises: a tunnel barrier layer; a storage layer provided to the tunnel barrier layer; and a voltage modulation enhancement layer provided on a surface of the storage layer on the side opposite to the tunnel barrier layer side.

Examples of the present disclosure include a suspension assembly for a magnetic storage device. The suspension assembly includes a load beam and a flexure. The load beam includes a flexure side and a substrate side opposite the flexure side. The load beam also includes a recess formed in the flexure side. The flexure is attached to the flexure side of the load beam at least partially within the recess.

An apparatus for electric power conversion includes a converter having a regulating circuit and switching network. The regulating circuit has magnetic storage elements, and switches connected to the magnetic storage elements and controllable to switch between switching configurations. The regulating circuit maintains an average DC current through a magnetic storage element. The switching network includes charge storage elements connected to switches that are controllable to switch between plural switch configurations. In one configuration, the switches forms an arrangement of charge storage elements in which at least one charge storage element is charged using the magnetic storage element through the network input or output port. In another, the switches form an arrangement of charge storage elements in which an element discharges using the magnetic storage element through one of the input port and output port of the switching network.

The invention discloses magnet inserting equipment, and relates to the technical field of automation equipment, the magnet inserting equipment comprises a machine table, a magnet storage device, a magnet inserting device and a magnet feeding device, the machine table is provided with a magnet storage position, a magnet feeding position and a magnet inserting position which are arranged at intervals, and the magnet inserting position is used for placing a to-be-inserted magnet product; the magnet storage device is arranged at the magnet storage position, the magnet storage device is provided with a magnet storage table, the magnet storage table is used for placing a material frame bearing a plurality of layers of material trays, and a magnet group is placed in each material tray; the magnet inserting device comprises a magnet inserting translation driving piece and a magnet inserting mechanism, the magnet inserting translation driving piece is arranged on the machine table, the magnet inserting mechanism is connected to the output end of the magnet inserting translation driving piece, and the magnet inserting mechanism is used for inserting a magnet into the product containing groove located in the magnet inserting position; the magnet feeding device comprises a magnet moving module and a magnet feeding module which are arranged on the machine table, the magnet moving module is used for transferring the material disc at the magnet storage position to the magnet feeding position, and the magnet feeding module is used for feeding the magnet set at the magnet feeding position to the magnet inserting mechanism. According to the technical scheme, automatic magnet feeding and magnet inserting are achieved, and the production efficiency is improved.

1. Name of the design product: magnetic storage box (2-layer book type) 2. Use of the design product: The design is used for organizing and storing eye shadow, blush and other makeup products. 3. Design points of the design product: in shape. 4. Picture or photo that best indicates the design points: perspective view. 5. Other circumstances that need to be explained: mark A as a mirror material.

The invention discloses a method for preparing an iron-platinum target blank through plasma ball milling and hot pressing sintering, and belongs to the technical field of iron-platinum targets. Pure platinum powder and pure iron powder are mixed by adopting a discharge plasma ball milling method, cold field discharge plasmas are introduced into mechanical ball milling, high-energy plasmas and vibration ball milling generate a synergistic effect, powder alloying is promoted, powder activity is activated, the iron platinum powder forms L10-phase iron platinum alloy under the action of the plasmas, and the L10-phase iron platinum alloy is obtained. And then the L10-phase iron-platinum alloy is placed in a graphite mold to be subjected to vacuum hot pressing sintering densification, and the L10-phase iron-platinum target material with high magnetocrystalline anisotropy and good storage performance is prepared. According to the method, the compactness and the magnetic storage performance of the iron-platinum target material blank are improved, the oxygen content is reduced, the controllability of the microstructure is achieved, and the service performance of the prepared iron-platinum target material is improved.

A magnetic storage device includes first and second magnetic layers and a non-magnetic layer, where the non-magnetic layer includes a first oxide layer containing magnesium and oxygen, a second oxide layer containing magnesium and oxygen, a third oxide layer containing zinc and oxygen, a fourth oxide layer containing a first predetermined element and oxygen, and a fifth oxide layer containing a second predetermined element and oxygen, and a crystal structure of an oxide of the first predetermined element and a crystal structure of an oxide of the second predetermined element are each a rock salt structure. The first predetermined element and the second predetermined element each have an oxide formation free energy greater than an oxide formation free energy of zinc, and the oxide of the first predetermined element and the oxide of the second predetermined element each have a bandgap narrower than a bandgap of an oxide of magnesium.

Examples of the present disclosure include a suspension assembly for a magnetic storage device. The suspension assembly includes a load beam and a flexure. The load beam includes a flexure side and a base-plate side opposite to the flexure side. The load beam also includes a recess formed in the flexure side. The flexure is attached to the flexure side of the load beam at least partially within the recess.