196results about "Magnetic layers" patented technology

The invention provides a flexible electromagnetic shielding film and a preparation method thereof. The preparation method comprises the following steps: mixing metal gallium and metal indium in a preset proportion to prepare a gallium-indium alloy; the preparation method comprises the following steps: putting a preset mass of gallium-indium alloy into an isopropanol solution, and treating through an ultrasonic cell disruption system to obtain a liquid metal particle suspension; stirring magnetic functional nanoparticles, an electrostatic spinning high-molecular elastomer and a solvent at normal temperature for a preset time to obtain an electrostatic spinning homogeneous solution; treating the electrostatic spinning homogeneous solution by adopting an electrostatic spinning process to obtain a magnetic nanofiber membrane; and spraying the liquid metal particle suspension onto the magnetic nanofiber membrane by adopting an electrostatic spraying process to obtain the flexible electromagnetic shielding film. According to the flexible electromagnetic shielding film and the preparation method thereof, the problem that the stability of an existing shielding material is reduced under the stretching effect can be solved.

To provide a new multilayer thin film exhibiting a tunnel magnetoresistance effect.SOLUTION: The present invention is a multilayer thin film having an insulating layer and a magnetic layer sandwiching the insulating layer. At least one of the magnetic layers is made of a Co-based alloy containing Al and / or Ga. For example, Co is contained in an amount of 58.5 to 63 at% with respect to the entire Co-based alloy. The Co-based alloy constituting a magnetic layer may be a β phase. The insulating layer is, for example, MgO or MgAl2O4. The magnetic layer on the other side of the insulating layer may be CoFeB (alloy) in addition to CoAl. Each layer is formed by sputtering, and planarization, crystallization, and the like are performed by heat treatment. A magnetic tunnel junction (MTJ) having the multilayer thin film of the present invention exhibits a high magnetoresistance change ratio (MR ratio), and can be applied to a next-generation magnetoresistance memory (MRAM) or the like.SELECTED DRAWING: Figure 3

A magnetic composite includes: a non-metallic inorganic base material; and a ferrite layer provided on a surface of the non-metallic inorganic base material, and the non-metallic inorganic base material has a thickness of 2.0 μm or more, the ferrite layer has a thickness (dF) of 2.0 μm or more and 50.0 μm or less, and contains spinel-type ferrite as a principal component, and a content of α-Fe2O3 in the ferrite layer is 3.0 mass % or more and 25.0 mass % or less.

A magnetic thin film laminated structure includes a first layer structure and a second layer structure stacked on the first layer structure. The first layer structure includes an adhesive layer on a substance, the adhesive layer being made of a material having compressive stress, at least one pair of layers on the adhesive layer, each pair of the at least one pair of layers including a magnetic film layer and an isolation layer, and an additional magnetic film layer on the at least one pair of layers. The second layer structure includes another adhesive layer on the first layer structure, another at least one pair of layers on the another adhesive layer, each pair of the another at least one pair of layers including a magnetic film layer and an isolation layer, and another additional magnetic film layer on the another at least one pair of layers.

A multilayer common mode filter of the present disclosure is a filter comprising a plurality of coils configuring mutually different channels, wherein a plurality of coil patterns, and a plurality of via conductors connecting the coil patterns are provided inside a coil stack, and the plurality of via conductors are arranged, on a floor plan of the coil stack, in positions where same do not overlap with each other.

[Problem] To electrically connect a lead layer and a protective film reliably even when the film thickness of a protective film that covers a functional film is extremely thin. [Solution] After the conductive protective film 51 is formed on the surface of the functional film 20, reverse sputtering is performed while a portion of the surface of the protective film 51 is covered with a mask 60, thereby physically restoring a natural oxide film 52 formed on the surface of the protective film 51 not covered by the mask 60. Thereafter, a lead layer 40 is formed on the surface of the protective film 51 not covered by the mask 60. Consequently, since the natural oxide film 52 formed on the surface of the protective film 51 can be removed without performing etching, the lead layer 40 and the protective film 51 can be connected electrically without damaging the functional layer 20 even when the film thickness of the protective film 51 is extremely thin.

The present invention relates to the technical field of magnetic code disk materials, and specifically discloses a FeCoCr / Al magnetic code disk material, a preparation method thereof, and an application thereof. The FeCoCr / Al magnetic code disk material comprises a substrate, a FeCoCr film, and an Al2O3 layer stacked in sequence, wherein the FeCoCr film comprises α-FeCoCr, γ-FeCoCr, and Co-Al alloy particles. The FeCoCr / Al magnetic code disk material provided by the present invention achieves a high coercive force, with an increase of up to 72% relative to the coercive force of a single FeCoCr film, meeting the practical application requirements of magnetic encoder code disks. At the same time, the dense Al2O3 passivation layer formed on the surface of the material makes the final device more environmentally compatible, thereby improving the service life of the device.

A computing element is provided. The computing element includes a) an artificial lattice comprising a multiplicity of connecting elements separated by pores; b) a plurality of input channels attached to the artificial lattice each configured to provide at least one of an electrical current and voltage to the artificial lattice; c) a plurality of readout channels attached to the artificial lattice, wherein each readout channel of the plurality of readout channels is connected to a common ground; and d) one or more sensing elements positioned at least one of perpendicular and along to the plurality of input channels and attached to the artificial lattice, wherein the one or more sensing elements configured to read a readout to create an output.

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (I), where ε t is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

To provide a method capable of manufacturing a spin wave excitation and detection structure improving a structure strength, improving the strength of a spin wave that can be excited, and widening a frequency bandwidth of the spin wave that can be excited.SOLUTION: The present invention relates to a method of manufacturing a spin wave excitation and a detection structure for exciting and detecting a spin wave. The manufacturing method of the spin wave excitation and detection structure includes the steps of: forming an insulation magnetic substance film on a donor substrate; manufacturing a laminated substrate by laminating a surface of the insulation magnetic substance film on the donor substrate with a surface of a support substrate while interposing a conductor film therebetween; removing the donor substrate from the laminated substrate; and forming a conductor line on the insulation magnetic substance film. Thus, the method manufactures the spin wave excitation and detection structure comprising the support substrate, the conductor film provided on the support substrate, the insulation magnetic substance film provided on the conductor film and the conductor line provided on the insulation magnetic substance film.SELECTED DRAWING: Figure 1

A magnetic storage element according to one embodiment of the present disclosure comprises: a tunnel barrier layer; a storage layer provided to the tunnel barrier layer; and a voltage modulation enhancement layer provided on a surface of the storage layer on the side opposite to the tunnel barrier layer side.

To reliably electrically connect the lead layer and protective film that covers a functional film even when the film thickness of the protective film is very small. After formation of a conductive protective film 51 on the surface of a functional film 20, reverse sputtering is performed with a part of the surface of the protective film 51 covered with a mask 60 to physically reduce a native oxide film 52 formed on a part of the surface of the protective film 51 that is not covered with the mask 60. Thereafter, a lead layer 40 is formed on a part of the surface of the protective film 51 that is not covered with the mask 60. This can remove the native oxide film 52 formed on the protective film 51 without requiring etching. Thus, even when the film thickness of the protective film 51 is very thin, it is possible to electrically connect the lead layer 40 and protective film 51 without damaging the functional film 20.

Device for detecting an object (6) above a primary coil (2) of an arrangement for inductive energy transmission with - a base plate (1) having the primary coil (2), and - a coil carrier (3) with magnetic field measuring coils arranged thereon, which is arranged above the primary coil (2), - measuring means (11) designed to detect the current through and / or the voltage at terminals of the measuring coils, wherein the voltage or the current is caused by a magnetic field generated by the primary coil (2), - comparison means (12) which are designed to compare the measured voltages and / or currents in the at least two measuring coils with each other or with reference voltages and / or reference currents, and - evaluation means (13) which are designed to determine the presence of an object (6) above the primary coil (2) from the comparison result, wherein the coil carrier (3) is elastically mounted so that when the object (6) is present, the position of the measuring coils in the magnetic field of the primary coil (2) changes, whereby the current through and / or the voltage at the terminals of the measuring coils changes, from which the presence of the object (6) can be inferred.

Wafer-bonded inductors, transformers, and related electronic components can be used in power electronics and provide low conduction loss in the MHz-GHz frequency range. The wafer bonding fabrication process and its thermal requirements offer relatively simple and low cost manufacturing. The resulting devices offer a unique combination of high power handling at high frequencies and small form factor.

To provide a magnetoresistance effect element with a large MR ratio.SOLUTION: A magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is arranged closer to the non-magnetic layer than the second layer. The first layer contains a heusler alloy which is at least partially crystallized. The second layer includes a ferromagnetic body which is at least partially crystallized, unlike the heusler alloy. The first layer and the second layer include a first atom added. The first atom is one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.SELECTED DRAWING: Figure 1

A P-type TBC solar cell and a manufacturing method therefor. The P-type TBC solar cell comprises P-type substrate silicon, wherein the backside of the P-type substrate silicon comprises a patterned N-type region; in the N-type region, a first tunneling layer, an N-type polysilicon layer, a first conductive shielding layer, a first passivation anti-reflection layer and a non-silver N fine finger are sequentially disposed outwards from the backside of the P-type substrate silicon; and the non-silver N fine finger penetrates the first passivation anti-reflection layer to come into contact with the first conductive shielding layer. In the present invention, a non-silver N fine finger is used as a metal electrode in an N-type region of the back face of a cell, such that the production costs of a P-type TBC solar cell can be greatly reduced; moreover, by means of providing a conductive shielding layer between the non-silver N fine finger and a corresponding polysilicon, metal slurry is prevented from coming into direct contact with the polysilicon during sintering of the non-silver N fine finger, such that the contact resistance is greatly reduced, fill factors of the cell are increased, an open-circuit voltage of the cell is increased and the photoelectric conversion efficiency of the cell is improved.

Provided herein are compositions comprising substrates that contain polymeric materials or non-magnetic, paramagnetic, or diamagnetic metal objects, and films or inks that contain ferromagnetic materials in which the films or the ferromagnetic materials are transparent. Also provided herein are methods of fabricating the substrates. Further provided herein are ferromagnetic material films containing transparent or translucent films that comprises ferromagnetic materials. The coating imparts functionality to the film such that the film is capable of being mechanically separated from the polymeric materials or non-magnetic, paramagnetic, or diamagnetic metal objects using a commercial magnetic separator. The transparent, food-safe ink composition, which can be printed using high-speed flexographic, gravure, intaglio, offset printing or pad printing consists of an ingestible magnetically susceptible pigment capable of rendering the printed template with magnetically active properties.

A multiple gate system for realizing the quantum anomalous Hall effect, including a top channel electrode which controls carrier density and electric field in a conduction channel, a first dielectric layer for the top channel gate, a patterned contact gate electrode which controls earner density on the contact and screens the top channel electrode's electric field on the contact, and a second dielectric layer for the contact gate, an electrically tunable material comprising semiconducting molybdenum ditelluride in the form of a first atomic sheet and a second atomic sheet, wherein first atomic sheet is rotated planarly from the second atomic sheet by about 2.5 to about 5 degrees, to form a geometrically stacked homobilayer moiré superlattice configured to host ferromagnetic states that spontaneously break time-reversal symmetry, where a perpendicular electric field is applied to the electrically tunable material, tuning the quantum anomalous Hall effect.

The present application relates to the technical field of electromagnetic-isolation shielding materials, and in particular to a heat-resistant nanocrystalline magnetic-isolation shielding material and a preparation method and application thereof. The preparation method comprises the following steps: S1, applying a double-sided adhesive tape onto a nanocrystalline soft-magnetic alloy ribbon to prepare a adhesive-coated nanocrystalline ribbon; S2, performing primary magnet cracking treatment on the adhesive-coated nanocrystalline ribbon to obtain a single-layered nanocrystalline magnetic layer; S3, performing multi-layer combination on the single-layered nanocrystalline magnetic layer to obtain a composite, and performing stress relief treatment on the composite to obtain a multi-layered nanocrystalline magnetic layer; and S4: performing secondary magnet cracking treatment on the multi-layered nanocrystalline magnetic layer to obtain a heat-resistant nanocrystalline magnetic-isolation shielding material. The preparation method of the heat-resistant nanocrystalline magnetic-isolation shielding material provided by the present application creatively adopts a process of two-stage magnet cracking treatment in combination with stress relief treatment and uses a specific double-sided adhesive tape, and thus the prepared magnetic-isolation shielding material has better thermal stability.

The invention relates to the technical field of magnetic materials. The invention provides a light metal-based vertical magnetic anisotropy thin film and a preparation method thereof. The light metal-based vertical magnetic anisotropy thin film structure is a light metal non-magnetic layer / CoFeB / MgO / Ta layer multi-layer film, the use of strong spin orbit coupled heavy metal materials such as W and Ta is avoided, and the preparation cost is reduced; according to the preparation method of the light metal-based vertical magnetic anisotropy thin film, atmosphere outside argon is not needed during magnetron sputtering of the thin film, the sputtering rate is controlled through off-axis sputtering to optimize the quality of a CoFeB / MgO interface, annealing machining is not needed, the low-cost vertical magnetic anisotropy thin film is obtained, meanwhile, a stainless steel mask plate in a Hall bar shape is combined, and the light metal-based vertical magnetic anisotropy thin film is obtained. The prepared thin film has a Hall bar shape, so that photoetching processing is not needed, a binding wire can be directly carried out, an abnormal Hall effect test is carried out in a magnetic field, and a rectangular Hall loop is obtained.

To provide a magnetic composite body having a ferrite layer which has comparatively thick film thickness, is excellent in various characteristics such as electric insulation property and has good adhesion, and an RFID tag having the magnetic composite body.SOLUTION: A magnetic composite body has a resin base material, and a ferrite layer provided on the surface of the resin base material, wherein the ferrite layer has a spinel type crystal phase as a base phase, thickness (dF) of 2.0 μm or more, and the full width at half maximum (FWHM) of a diffraction line (I311) based on a (311) plane of the spinel type crystal phase in X-ray diffraction analysis using Co-Kα as a radiation source of 1.000° or more and 1.200° or less.SELECTED DRAWING: Figure 5

To provide a hard magnetic material which does not contain rare earth metals but simultaneously exhibits high coercivity, high residual magnetism and high energy density.SOLUTION: An intermetallic compound has the following general composition of XaX'bYcZd. In the formula, X and X' are each independently a 3d transition metal with an unpaired electron, Y is a 4d or 5d transition metal of group 5, 8, 9 or 10, Z is a typical element of group 13, 14 or 15, a and d are each independently a number between 0.1 and 2.0, and b and c are each independently a number between 0.0 and 2.0, provided that a+b+c+d is between 3.0 and 4.0.SELECTED DRAWING: None

Disclosed are composite substrates and rechargeable lithium batteries. The composite substrate includes a first metal layer, a second metal layer, and a magnetic layer between the first metal layer and the second metal layer. A ratio of a thickness of the magnetic layer to a thickness of the composite substrate is in a range of about 0.01 to about 0.9. The magnetic layer includes a magnetic material and a polymeric material. The magnetic material includes at least one of neodymium (Nd), neodymium-iron-boron (NdFeB), ferrite, aluminum-nickel-cobalt (AlNiCo), samarium-cobalt (SmCo), and any combination thereof. A ratio of a weight of the magnetic material to a total weight of the magnetic layer is in a range of about 10 wt % to about 96 wt %.

To provide a laminate having an epitaxial thin film of Y-type hexaferrite which can be formed without using a buffer layer, and to provide an element and a device.SOLUTION: The laminate includes a substrate and a film formed on the substrate. The film has an epitaxial layer comprising Y-type hexaferrite. The Y-type hexaferrite is represented by the general formula (Ba1 - xSrx) 2Co2Fe12 - y - δ AlyX δ O22. X is at least one element selected from the group consisting of Cr, Sb, In, and V. 0 ≤ x ≤ 1, 1 <y ≤ 6, and 0 ≤ δ ≤ 1.SELECTED DRAWING: Figure 1

To provide an electromagnetic wave attenuation body capable of improving attenuation characteristics for electromagnetic wave, an electronic device, a film deposition device, and a film deposition method.SOLUTION: An electromagnetic wave attenuation body includes a first structure. The first structure includes: a first member including a first magnetic layer and a first nonmagnetic layer with conductivity provided alternately in a first direction as a lamination direction, a second member including a second magnetic layer and a second nonmagnetic layer with conductivity provided alternately in the first direction, and a third member including a third nonmagnetic layer with conductivity. The direction from the third member to the first member is along the first direction. The direction from the third member to the second member is along the first direction. A first magnetic layer thickness of the first magnetic layer along the first direction is larger than a second magnetic layer thickness of the second magnetic layer along the first direction.SELECTED DRAWING: Figure 1

The present disclosure generally relates to a magnetic sensor half bridge circuit. The half bridge circuit comprises a bias source connected to a first leg and a second leg. The first leg comprises one or more first spin-orbit torque (SOT) structures connected in series, each first SOT structure comprising a first ferromagnetic (FM) layer disposed on a first SOT layer. The first SOT layer has a first end connected to ground and a second end connected to a first voltage sensor. The second leg comprises one or more second SOT structures connected in series, each second SOT structure comprising a second FM layer disposed on a second SOT layer. The second SOT layer has a first end connected to a second voltage sensor and a second end connected to a ground. The first voltage sensor is disposed adjacent to the second voltage sensor.

The application relates to a preparation method of a high-coercivity high-remanence-ratio composite ferrite film material, which comprises the following steps: (1) preparing a BaFe9Al3O 19 ferrite target material;(2) depositing an amorphous BaFe9Al3O 19 ferrite film on an Al2O3 (000l) substrate by a pulse laser deposition method;(3) placing the grown amorphous BaFe9Al3O 19 ferrite film in a muffle furnace to perform annealing, so as to form BaFe2O4 and BaFe9Al3O 19 composite ferrite films.The application prepares a hexagonal ferrite target material with good compactness by solid-phase method and Al ion doping, and selects a pulse laser deposition technology to deposit a film; BaFe2O4 and BaFe9Al3O 19 composite films are formed by controlling the growth conditions of the film, the characteristics of soft and hard magnetic composite are fully exerted, the magnetic performance of the ferrite film is improved, and finally, the composite ferrite film material with the c-axis out-of-plane orientation and the high-coercivity characteristic is prepared.The application has the characteristics that the coercivity is greater than 1.83T, the remanence ratio reaches 93%, and the application has a good application prospect in the fields of self-biased microwave devices and magnetic recording.

The invention discloses a magnetic field adjustable spin wave excitation mode and magnetic damping magnetic material and a preparation method and application thereof. The magnetic material is Co1. 8Fe1Si1, and the crystal structure of the magnetic material is A2 or B2. The effective magnetic damping of the material is remarkably adjustable in an external magnetic field of 600-6600 Oe, and the maximum change range is 49.1 * 10 <-3 >-8.6 * 10 <-3 >; meanwhile, the number of spin wave excitation modes is increased from 3 to 5, and an MSSW mode, a Killion mode and a 1 / 2 / 3-order PSSW mode can be excited at the same time at most. The material is obtained by sequentially depositing a buffer layer and a Co1. 8Fe1Si1 alloy film on a substrate through vacuum magnetron sputtering and carrying out vacuum annealing. The magnetic material disclosed by the invention has an important application prospect in the field of reconfigurable spin electronic devices due to a spin wave excitation mode with an adjustable magnetic field and a magnetic damping characteristic.