126results about "Magnetic layers" patented technology

[Problem] To electrically connect a lead layer and a protective film reliably even when the film thickness of a protective film that covers a functional film is extremely thin. [Solution] After the conductive protective film 51 is formed on the surface of the functional film 20, reverse sputtering is performed while a portion of the surface of the protective film 51 is covered with a mask 60, thereby physically restoring a natural oxide film 52 formed on the surface of the protective film 51 not covered by the mask 60. Thereafter, a lead layer 40 is formed on the surface of the protective film 51 not covered by the mask 60. Consequently, since the natural oxide film 52 formed on the surface of the protective film 51 can be removed without performing etching, the lead layer 40 and the protective film 51 can be connected electrically without damaging the functional layer 20 even when the film thickness of the protective film 51 is extremely thin.

A computing element is provided. The computing element includes a) an artificial lattice comprising a multiplicity of connecting elements separated by pores; b) a plurality of input channels attached to the artificial lattice each configured to provide at least one of an electrical current and voltage to the artificial lattice; c) a plurality of readout channels attached to the artificial lattice, wherein each readout channel of the plurality of readout channels is connected to a common ground; and d) one or more sensing elements positioned at least one of perpendicular and along to the plurality of input channels and attached to the artificial lattice, wherein the one or more sensing elements configured to read a readout to create an output.

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (I), where ε t is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

To provide a method capable of manufacturing a spin wave excitation and detection structure improving a structure strength, improving the strength of a spin wave that can be excited, and widening a frequency bandwidth of the spin wave that can be excited.SOLUTION: The present invention relates to a method of manufacturing a spin wave excitation and a detection structure for exciting and detecting a spin wave. The manufacturing method of the spin wave excitation and detection structure includes the steps of: forming an insulation magnetic substance film on a donor substrate; manufacturing a laminated substrate by laminating a surface of the insulation magnetic substance film on the donor substrate with a surface of a support substrate while interposing a conductor film therebetween; removing the donor substrate from the laminated substrate; and forming a conductor line on the insulation magnetic substance film. Thus, the method manufactures the spin wave excitation and detection structure comprising the support substrate, the conductor film provided on the support substrate, the insulation magnetic substance film provided on the conductor film and the conductor line provided on the insulation magnetic substance film.SELECTED DRAWING: Figure 1

To reliably electrically connect the lead layer and protective film that covers a functional film even when the film thickness of the protective film is very small. After formation of a conductive protective film 51 on the surface of a functional film 20, reverse sputtering is performed with a part of the surface of the protective film 51 covered with a mask 60 to physically reduce a native oxide film 52 formed on a part of the surface of the protective film 51 that is not covered with the mask 60. Thereafter, a lead layer 40 is formed on a part of the surface of the protective film 51 that is not covered with the mask 60. This can remove the native oxide film 52 formed on the protective film 51 without requiring etching. Thus, even when the film thickness of the protective film 51 is very thin, it is possible to electrically connect the lead layer 40 and protective film 51 without damaging the functional film 20.

Wafer-bonded inductors, transformers, and related electronic components can be used in power electronics and provide low conduction loss in the MHz-GHz frequency range. The wafer bonding fabrication process and its thermal requirements offer relatively simple and low cost manufacturing. The resulting devices offer a unique combination of high power handling at high frequencies and small form factor.

To provide a magnetoresistance effect element with a large MR ratio.SOLUTION: A magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is arranged closer to the non-magnetic layer than the second layer. The first layer contains a heusler alloy which is at least partially crystallized. The second layer includes a ferromagnetic body which is at least partially crystallized, unlike the heusler alloy. The first layer and the second layer include a first atom added. The first atom is one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.SELECTED DRAWING: Figure 1

A P-type TBC solar cell and a manufacturing method therefor. The P-type TBC solar cell comprises P-type substrate silicon, wherein the backside of the P-type substrate silicon comprises a patterned N-type region; in the N-type region, a first tunneling layer, an N-type polysilicon layer, a first conductive shielding layer, a first passivation anti-reflection layer and a non-silver N fine finger are sequentially disposed outwards from the backside of the P-type substrate silicon; and the non-silver N fine finger penetrates the first passivation anti-reflection layer to come into contact with the first conductive shielding layer. In the present invention, a non-silver N fine finger is used as a metal electrode in an N-type region of the back face of a cell, such that the production costs of a P-type TBC solar cell can be greatly reduced; moreover, by means of providing a conductive shielding layer between the non-silver N fine finger and a corresponding polysilicon, metal slurry is prevented from coming into direct contact with the polysilicon during sintering of the non-silver N fine finger, such that the contact resistance is greatly reduced, fill factors of the cell are increased, an open-circuit voltage of the cell is increased and the photoelectric conversion efficiency of the cell is improved.

Provided herein are compositions comprising substrates that contain polymeric materials or non-magnetic, paramagnetic, or diamagnetic metal objects, and films or inks that contain ferromagnetic materials in which the films or the ferromagnetic materials are transparent. Also provided herein are methods of fabricating the substrates. Further provided herein are ferromagnetic material films containing transparent or translucent films that comprises ferromagnetic materials. The coating imparts functionality to the film such that the film is capable of being mechanically separated from the polymeric materials or non-magnetic, paramagnetic, or diamagnetic metal objects using a commercial magnetic separator. The transparent, food-safe ink composition, which can be printed using high-speed flexographic, gravure, intaglio, offset printing or pad printing consists of an ingestible magnetically susceptible pigment capable of rendering the printed template with magnetically active properties.

A multiple gate system for realizing the quantum anomalous Hall effect, including a top channel electrode which controls carrier density and electric field in a conduction channel, a first dielectric layer for the top channel gate, a patterned contact gate electrode which controls earner density on the contact and screens the top channel electrode's electric field on the contact, and a second dielectric layer for the contact gate, an electrically tunable material comprising semiconducting molybdenum ditelluride in the form of a first atomic sheet and a second atomic sheet, wherein first atomic sheet is rotated planarly from the second atomic sheet by about 2.5 to about 5 degrees, to form a geometrically stacked homobilayer moiré superlattice configured to host ferromagnetic states that spontaneously break time-reversal symmetry, where a perpendicular electric field is applied to the electrically tunable material, tuning the quantum anomalous Hall effect.

The present application relates to the technical field of electromagnetic-isolation shielding materials, and in particular to a heat-resistant nanocrystalline magnetic-isolation shielding material and a preparation method and application thereof. The preparation method comprises the following steps: S1, applying a double-sided adhesive tape onto a nanocrystalline soft-magnetic alloy ribbon to prepare a adhesive-coated nanocrystalline ribbon; S2, performing primary magnet cracking treatment on the adhesive-coated nanocrystalline ribbon to obtain a single-layered nanocrystalline magnetic layer; S3, performing multi-layer combination on the single-layered nanocrystalline magnetic layer to obtain a composite, and performing stress relief treatment on the composite to obtain a multi-layered nanocrystalline magnetic layer; and S4: performing secondary magnet cracking treatment on the multi-layered nanocrystalline magnetic layer to obtain a heat-resistant nanocrystalline magnetic-isolation shielding material. The preparation method of the heat-resistant nanocrystalline magnetic-isolation shielding material provided by the present application creatively adopts a process of two-stage magnet cracking treatment in combination with stress relief treatment and uses a specific double-sided adhesive tape, and thus the prepared magnetic-isolation shielding material has better thermal stability.

The invention relates to the technical field of magnetic materials. The invention provides a light metal-based vertical magnetic anisotropy thin film and a preparation method thereof. The light metal-based vertical magnetic anisotropy thin film structure is a light metal non-magnetic layer / CoFeB / MgO / Ta layer multi-layer film, the use of strong spin orbit coupled heavy metal materials such as W and Ta is avoided, and the preparation cost is reduced; according to the preparation method of the light metal-based vertical magnetic anisotropy thin film, atmosphere outside argon is not needed during magnetron sputtering of the thin film, the sputtering rate is controlled through off-axis sputtering to optimize the quality of a CoFeB / MgO interface, annealing machining is not needed, the low-cost vertical magnetic anisotropy thin film is obtained, meanwhile, a stainless steel mask plate in a Hall bar shape is combined, and the light metal-based vertical magnetic anisotropy thin film is obtained. The prepared thin film has a Hall bar shape, so that photoetching processing is not needed, a binding wire can be directly carried out, an abnormal Hall effect test is carried out in a magnetic field, and a rectangular Hall loop is obtained.

To provide a magnetic composite body having a ferrite layer which has comparatively thick film thickness, is excellent in various characteristics such as electric insulation property and has good adhesion, and an RFID tag having the magnetic composite body.SOLUTION: A magnetic composite body has a resin base material, and a ferrite layer provided on the surface of the resin base material, wherein the ferrite layer has a spinel type crystal phase as a base phase, thickness (dF) of 2.0 μm or more, and the full width at half maximum (FWHM) of a diffraction line (I311) based on a (311) plane of the spinel type crystal phase in X-ray diffraction analysis using Co-Kα as a radiation source of 1.000° or more and 1.200° or less.SELECTED DRAWING: Figure 5

To provide a hard magnetic material which does not contain rare earth metals but simultaneously exhibits high coercivity, high residual magnetism and high energy density.SOLUTION: An intermetallic compound has the following general composition of XaX'bYcZd. In the formula, X and X' are each independently a 3d transition metal with an unpaired electron, Y is a 4d or 5d transition metal of group 5, 8, 9 or 10, Z is a typical element of group 13, 14 or 15, a and d are each independently a number between 0.1 and 2.0, and b and c are each independently a number between 0.0 and 2.0, provided that a+b+c+d is between 3.0 and 4.0.SELECTED DRAWING: None

Disclosed are composite substrates and rechargeable lithium batteries. The composite substrate includes a first metal layer, a second metal layer, and a magnetic layer between the first metal layer and the second metal layer. A ratio of a thickness of the magnetic layer to a thickness of the composite substrate is in a range of about 0.01 to about 0.9. The magnetic layer includes a magnetic material and a polymeric material. The magnetic material includes at least one of neodymium (Nd), neodymium-iron-boron (NdFeB), ferrite, aluminum-nickel-cobalt (AlNiCo), samarium-cobalt (SmCo), and any combination thereof. A ratio of a weight of the magnetic material to a total weight of the magnetic layer is in a range of about 10 wt % to about 96 wt %.

To provide a laminate having an epitaxial thin film of Y-type hexaferrite which can be formed without using a buffer layer, and to provide an element and a device.SOLUTION: The laminate includes a substrate and a film formed on the substrate. The film has an epitaxial layer comprising Y-type hexaferrite. The Y-type hexaferrite is represented by the general formula (Ba1 - xSrx) 2Co2Fe12 - y - δ AlyX δ O22. X is at least one element selected from the group consisting of Cr, Sb, In, and V. 0 ≤ x ≤ 1, 1 <y ≤ 6, and 0 ≤ δ ≤ 1.SELECTED DRAWING: Figure 1

To provide an electromagnetic wave attenuation body capable of improving attenuation characteristics for electromagnetic wave, an electronic device, a film deposition device, and a film deposition method.SOLUTION: An electromagnetic wave attenuation body includes a first structure. The first structure includes: a first member including a first magnetic layer and a first nonmagnetic layer with conductivity provided alternately in a first direction as a lamination direction, a second member including a second magnetic layer and a second nonmagnetic layer with conductivity provided alternately in the first direction, and a third member including a third nonmagnetic layer with conductivity. The direction from the third member to the first member is along the first direction. The direction from the third member to the second member is along the first direction. A first magnetic layer thickness of the first magnetic layer along the first direction is larger than a second magnetic layer thickness of the second magnetic layer along the first direction.SELECTED DRAWING: Figure 1

The application relates to a preparation method of a high-coercivity high-remanence-ratio composite ferrite film material, which comprises the following steps: (1) preparing a BaFe9Al3O 19 ferrite target material;(2) depositing an amorphous BaFe9Al3O 19 ferrite film on an Al2O3 (000l) substrate by a pulse laser deposition method;(3) placing the grown amorphous BaFe9Al3O 19 ferrite film in a muffle furnace to perform annealing, so as to form BaFe2O4 and BaFe9Al3O 19 composite ferrite films.The application prepares a hexagonal ferrite target material with good compactness by solid-phase method and Al ion doping, and selects a pulse laser deposition technology to deposit a film; BaFe2O4 and BaFe9Al3O 19 composite films are formed by controlling the growth conditions of the film, the characteristics of soft and hard magnetic composite are fully exerted, the magnetic performance of the ferrite film is improved, and finally, the composite ferrite film material with the c-axis out-of-plane orientation and the high-coercivity characteristic is prepared.The application has the characteristics that the coercivity is greater than 1.83T, the remanence ratio reaches 93%, and the application has a good application prospect in the fields of self-biased microwave devices and magnetic recording.

The invention discloses a magnetic field adjustable spin wave excitation mode and magnetic damping magnetic material and a preparation method and application thereof. The magnetic material is Co1. 8Fe1Si1, and the crystal structure of the magnetic material is A2 or B2. The effective magnetic damping of the material is remarkably adjustable in an external magnetic field of 600-6600 Oe, and the maximum change range is 49.1 * 10 <-3 >-8.6 * 10 <-3 >; meanwhile, the number of spin wave excitation modes is increased from 3 to 5, and an MSSW mode, a Killion mode and a 1 / 2 / 3-order PSSW mode can be excited at the same time at most. The material is obtained by sequentially depositing a buffer layer and a Co1. 8Fe1Si1 alloy film on a substrate through vacuum magnetron sputtering and carrying out vacuum annealing. The magnetic material disclosed by the invention has an important application prospect in the field of reconfigurable spin electronic devices due to a spin wave excitation mode with an adjustable magnetic field and a magnetic damping characteristic.

The application discloses a Sm-Fe-based permanent magnetic film and a preparation method and application thereof. The Sm-Fe-based permanent magnetic film comprises a Ta buffer layer, a Sm-Fe layer and a Ta cover layer which are sequentially arranged along the thickness direction of a substrate, the Sm-Fe layer has perpendicular magnetic anisotropy, and the Sm-Fe layer comprises pure SmFe x polycrystalline film, x = 1.8-2. The preparation method comprises the following steps: sequentially depositing a Ta buffer layer, a Sm-Fe layer and a Ta cover layer on a substrate by using a magnetron sputtering technology, and performing annealing heat treatment on the obtained composite film to prepare the Sm-Fe-based permanent magnetic film. The Sm-Fe-based permanent magnetic film has excellent magnetic anisotropy in the vertical direction and has higher coercivity. The successful preparation of the good perpendicular anisotropy magnetic film has important application value in the application of micro-electro-mechanical systems, micro-electronic systems, magnetic recording materials and spin electronic devices.

The present application belongs to the field of ferrite thick film preparation, and particularly relates to a high orientation degree hexagonal ferrite thick film and a hot-pressing preparation method thereof. The present application aims at the problem that high orientation degree and high density of the hexagonal ferrite thick film are difficult to be realized simultaneously, and proposes a two-step hot-pressing sintering method to improve the orientation degree of the thick film. The low-temperature hot-pressing magnetic field orientation process and the high-temperature hot-pressing sintering process are organically combined to form a two-step hot-pressing sintering method for preparing the high-orientation and dense BaFe 12 O 19 thick film. The electromagnet and the heating plate in the low-temperature hot-pressing magnetic field orientation equipment are combined in a discrete manner, which effectively improves the stability of the magnetic field and is beneficial to the improvement of the orientation degree of the thick film.

A magnetic field detection sensor with: a magnetic impedance element designed to exploit a magnetic impedance effect; a bias coil designed to apply a bias field to the magnetic impedance element; an oscillator circuit designed to apply an alternating current to the magnetic impedance element; a differentiating circuit designed to differentiate an output signal of the magnetic impedance element; a flip-flop circuit configured to output a high-level signal and a low-level signal based on a trigger signal output by the differentiating circuit; and a computing unit configured to detect an external magnetic field based on a time course with high and low of the high-level signal and low-level signal output by the flip-flop circuit, wherein the magnetic field detection sensor is configured to detect the external magnetic field based on an output signal obtained by applying the alternating current to the magnetic impedance element, the magnetic impedance element comprises a non-magnetic substrate and a magnetic layer provided on a surface of the non-magnetic substrate, wherein a magnetic field detection direction coincides with a longitudinal direction of the magnetic impedance element and the magnetic layer is configured to have magnetic anisotropy such that a direction of an axis of its easy magnetizability coincides with the magnetic field detection direction, and The computing unit is configured to send a reset signal to the flip-flop circuit at the time of a drop in an AC bias frequency, and to detect the external magnetic field based on the duration of an initial high-level signal following the reset signal.

The invention discloses a micron-sized SmCo-based multi-layer composite film as well as a preparation method and application of the micron-sized SmCo-based multi-layer composite film. The micron-sized SmCo-based multi-layer composite film comprises a transition metal layer-SmCo layer alternating laminated structure and a covering layer covering the surface of the transition metal layer-SmCo layer alternating laminated structure, the alternating frequency of transition metal layers and SmCo layers in the transition metal layer-SmCo layer alternating laminated structure is larger than or equal to 1, and the transition metal layers comprise one of Cr, Mo and Ta. The micron-sized SmCo-based multilayer composite film has the advantages of large thickness, large coercive force, high remanence ratio, excellent magnetic performance and the like and can be used for a micro electro mechanical system, and the preparation method is simple and easy to operate and control, low in production cost, high in production efficiency and suitable for large-scale industrial production and application.

To provide a thermal spraying shield film capable of magnetically shielding low-frequency magnetism.SOLUTION: In a magnetic shield material and a manufacturing method thereof that deposits a shield film that shields magnetism by spraying on at least a part of the surface of a base material, a shield film 3 is formed using powder of a soft magnetic material that shields by absorbing low-frequency magnetism as a thermal spray material, and the soft magnetic material is sendust, permalloy, silicon steel, and another metal material, ferrite, or another ceramic.SELECTED DRAWING: Figure 1

The embodiment of the invention provides a reversible magnetic thin film material, a magnetism regulation and control method, a preparation method and a memory, the reversible magnetic thin film material is used for reversible magnetism regulation and control, the reversible magnetic thin film material comprises an Sb-Co alloy type thin film, and the atomic ratio of Sb to Co is 3: 1. According to the reversible magnetic thin film material provided by the embodiment of the invention, a highly reversible block metal magnetic switch is realized, the magnetic modulation amplitude of block ferromagnetic metal is improved, the metal shielding effect is broken through to realize volume phase regulation and control, stable operation at room temperature is ensured, and the reversible magnetic thin film material has reversible and non-volatile operation characteristics; therefore, a way is laid for practicability of high-performance magnetic electronic devices.

The invention provides a magnetic thin film. The magnetic thin film comprises a substrate and a composite layer, the composite layer comprises a plurality of laminated magnetic layers and a plurality of insulated dielectric layers, and the plurality of magnetic layers and the plurality of dielectric layers are laminated and alternately arranged on one side of the substrate. The thickness of each magnetic layer ranges from 2 nm to 100 nm. And the thickness of each dielectric layer is 2 nm to 10 nm. The composite layer includes a plurality of cracks distributed aperiodically. At least part of the cracks extend in different directions along the cross section perpendicular to the lamination direction of the composite layer, and at least part of the cracks extend non-linearly along the cross section perpendicular to the lamination direction of the composite layer. The invention also provides an electronic device and a semiconductor packaging module applying the magnetic thin film, and a preparation method of the magnetic thin film. And the magnetic film is a wave-absorbing material with high magnetic conductivity in a radio frequency microwave frequency band. The magnetic thin film still has high magnetic conductivity and high resistivity under the condition that the thickness reaches the micron order.

This invention provides a high-permeability multilayer flexible soft magnetic film, its preparation method, and its applications. The multilayer flexible soft magnetic film is composed of alternating layers of magnetic metal layers and polymer insulating dielectric layers. Each magnetic metal layer is precisely controlled to be 200–900 nm thick, and each polymer insulating dielectric layer is controlled to be 100–500 nm thick, with the total thickness of the magnetic metal layers accounting for 30%–80%. Through this structural design, the polymer insulating dielectric layer effectively blocks interlayer eddy current paths, significantly suppressing high-frequency eddy current losses. Simultaneously, the high proportion of magnetic layers provides sufficient magnetic flux and magnetic loss contribution, avoiding insufficient magnetic performance due to excessively thick insulating layers or exacerbated eddy current losses due to excessively thick magnetic layers. Therefore, the imaginary peak value of the film's effective permeability is greater than 400, exhibiting excellent high-frequency magnetic loss, wave absorption, and noise suppression capabilities. Furthermore, the structure is stable and flexible, making it suitable for high-frequency filtering, electromagnetic compatibility, and other applications.

The invention relates to a magnetoelastic transducer (TME1, TME2) comprising an element made of monocrystalline ferromagnetic material (EFM1, EFM2) having an anisotropic magnetoelastic tensor, said element having a geometric axis of cylindrical symmetry (ASG) aligned with a crystalline axis of symmetry (ASC) having a discrete rotation symmetry of order nJc≥2 and having at least one resonance between a magnetic oscillation mode (MAG) and an elastic oscillation mode (MAL).It also relates to a system for generating or detecting elastic waves having a total angular momentum of non-zero index comprising at least one magnetoelastic transducer according to one of the preceding claims and an antenna (ANT1, ANT2) configured to generate and / or detect, in correspondence with the ferromagnetic element of said transducer, an electromagnetic mode (MEL) suitable for exciting or capable of being generated by said magnetic oscillation mode of the ferromagnetic element. Figure for the abstract: figure 2A.

The invention belongs to the technical field of soft magnetic high-entropy alloy materials and magnetron sputtering, and particularly relates to a nitrogen-doped high-entropy alloy film inductance material and a preparation method thereof.The high-entropy alloy components comprise B and / or Zr, Fe, Co and Ni elements, and the nitrogen-doped high-entropy alloy film inductance material is obtained through a magnetron sputtering method. The method specifically comprises the steps that in the sputtering process of the high-entropy alloy film, nitrogen with certain partial pressure is introduced, and the nitrogen element is deposited into the high-entropy alloy film and forms nitride with a high-entropy alloy element; the high resistivity characteristic of the material is improved, magnetic performance deterioration caused by introduction of a non-magnetic phase is weakened, meanwhile, the material has excellent magnetic performance, the performance of the film is regulated and controlled by controlling nitrogen partial pressure, nitrides of various different structures are formed, the regulation and control mode is more accurate, the nitrogen doping effect is more uniform, cost is reduced, and the preparation method is suitable for industrial production. The method is suitable for large-scale industrial production.