83results about "Magnetic layers" patented technology

A computing element is provided. The computing element includes a) an artificial lattice comprising a multiplicity of connecting elements separated by pores; b) a plurality of input channels attached to the artificial lattice each configured to provide at least one of an electrical current and voltage to the artificial lattice; c) a plurality of readout channels attached to the artificial lattice, wherein each readout channel of the plurality of readout channels is connected to a common ground; and d) one or more sensing elements positioned at least one of perpendicular and along to the plurality of input channels and attached to the artificial lattice, wherein the one or more sensing elements configured to read a readout to create an output.

Wafer-bonded inductors, transformers, and related electronic components can be used in power electronics and provide low conduction loss in the MHz-GHz frequency range. The wafer bonding fabrication process and its thermal requirements offer relatively simple and low cost manufacturing. The resulting devices offer a unique combination of high power handling at high frequencies and small form factor.

To provide a magnetoresistance effect element with a large MR ratio.SOLUTION: A magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is arranged closer to the non-magnetic layer than the second layer. The first layer contains a heusler alloy which is at least partially crystallized. The second layer includes a ferromagnetic body which is at least partially crystallized, unlike the heusler alloy. The first layer and the second layer include a first atom added. The first atom is one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.SELECTED DRAWING: Figure 1

A P-type TBC solar cell and a manufacturing method therefor. The P-type TBC solar cell comprises P-type substrate silicon, wherein the backside of the P-type substrate silicon comprises a patterned N-type region; in the N-type region, a first tunneling layer, an N-type polysilicon layer, a first conductive shielding layer, a first passivation anti-reflection layer and a non-silver N fine finger are sequentially disposed outwards from the backside of the P-type substrate silicon; and the non-silver N fine finger penetrates the first passivation anti-reflection layer to come into contact with the first conductive shielding layer. In the present invention, a non-silver N fine finger is used as a metal electrode in an N-type region of the back face of a cell, such that the production costs of a P-type TBC solar cell can be greatly reduced; moreover, by means of providing a conductive shielding layer between the non-silver N fine finger and a corresponding polysilicon, metal slurry is prevented from coming into direct contact with the polysilicon during sintering of the non-silver N fine finger, such that the contact resistance is greatly reduced, fill factors of the cell are increased, an open-circuit voltage of the cell is increased and the photoelectric conversion efficiency of the cell is improved.

To provide a magnetic composite body having a ferrite layer which has comparatively thick film thickness, is excellent in various characteristics such as electric insulation property and has good adhesion, and an RFID tag having the magnetic composite body.SOLUTION: A magnetic composite body has a resin base material, and a ferrite layer provided on the surface of the resin base material, wherein the ferrite layer has a spinel type crystal phase as a base phase, thickness (dF) of 2.0 μm or more, and the full width at half maximum (FWHM) of a diffraction line (I311) based on a (311) plane of the spinel type crystal phase in X-ray diffraction analysis using Co-Kα as a radiation source of 1.000° or more and 1.200° or less.SELECTED DRAWING: Figure 5

To provide a hard magnetic material which does not contain rare earth metals but simultaneously exhibits high coercivity, high residual magnetism and high energy density.SOLUTION: An intermetallic compound has the following general composition of XaX'bYcZd. In the formula, X and X' are each independently a 3d transition metal with an unpaired electron, Y is a 4d or 5d transition metal of group 5, 8, 9 or 10, Z is a typical element of group 13, 14 or 15, a and d are each independently a number between 0.1 and 2.0, and b and c are each independently a number between 0.0 and 2.0, provided that a+b+c+d is between 3.0 and 4.0.SELECTED DRAWING: None

Disclosed are composite substrates and rechargeable lithium batteries. The composite substrate includes a first metal layer, a second metal layer, and a magnetic layer between the first metal layer and the second metal layer. A ratio of a thickness of the magnetic layer to a thickness of the composite substrate is in a range of about 0.01 to about 0.9. The magnetic layer includes a magnetic material and a polymeric material. The magnetic material includes at least one of neodymium (Nd), neodymium-iron-boron (NdFeB), ferrite, aluminum-nickel-cobalt (AlNiCo), samarium-cobalt (SmCo), and any combination thereof. A ratio of a weight of the magnetic material to a total weight of the magnetic layer is in a range of about 10 wt % to about 96 wt %.

To provide a laminate having an epitaxial thin film of Y-type hexaferrite which can be formed without using a buffer layer, and to provide an element and a device.SOLUTION: The laminate includes a substrate and a film formed on the substrate. The film has an epitaxial layer comprising Y-type hexaferrite. The Y-type hexaferrite is represented by the general formula (Ba1 - xSrx) 2Co2Fe12 - y - δ AlyX δ O22. X is at least one element selected from the group consisting of Cr, Sb, In, and V. 0 ≤ x ≤ 1, 1 <y ≤ 6, and 0 ≤ δ ≤ 1.SELECTED DRAWING: Figure 1

The application relates to a preparation method of a high-coercivity high-remanence-ratio composite ferrite film material, which comprises the following steps: (1) preparing a BaFe9Al3O 19 ferrite target material;(2) depositing an amorphous BaFe9Al3O 19 ferrite film on an Al2O3 (000l) substrate by a pulse laser deposition method;(3) placing the grown amorphous BaFe9Al3O 19 ferrite film in a muffle furnace to perform annealing, so as to form BaFe2O4 and BaFe9Al3O 19 composite ferrite films.The application prepares a hexagonal ferrite target material with good compactness by solid-phase method and Al ion doping, and selects a pulse laser deposition technology to deposit a film; BaFe2O4 and BaFe9Al3O 19 composite films are formed by controlling the growth conditions of the film, the characteristics of soft and hard magnetic composite are fully exerted, the magnetic performance of the ferrite film is improved, and finally, the composite ferrite film material with the c-axis out-of-plane orientation and the high-coercivity characteristic is prepared.The application has the characteristics that the coercivity is greater than 1.83T, the remanence ratio reaches 93%, and the application has a good application prospect in the fields of self-biased microwave devices and magnetic recording.

The invention discloses a magnetic field adjustable spin wave excitation mode and magnetic damping magnetic material and a preparation method and application thereof. The magnetic material is Co1. 8Fe1Si1, and the crystal structure of the magnetic material is A2 or B2. The effective magnetic damping of the material is remarkably adjustable in an external magnetic field of 600-6600 Oe, and the maximum change range is 49.1 * 10 <-3 >-8.6 * 10 <-3 >; meanwhile, the number of spin wave excitation modes is increased from 3 to 5, and an MSSW mode, a Killion mode and a 1 / 2 / 3-order PSSW mode can be excited at the same time at most. The material is obtained by sequentially depositing a buffer layer and a Co1. 8Fe1Si1 alloy film on a substrate through vacuum magnetron sputtering and carrying out vacuum annealing. The magnetic material disclosed by the invention has an important application prospect in the field of reconfigurable spin electronic devices due to a spin wave excitation mode with an adjustable magnetic field and a magnetic damping characteristic.

The application discloses a Sm-Fe-based permanent magnetic film and a preparation method and application thereof. The Sm-Fe-based permanent magnetic film comprises a Ta buffer layer, a Sm-Fe layer and a Ta cover layer which are sequentially arranged along the thickness direction of a substrate, the Sm-Fe layer has perpendicular magnetic anisotropy, and the Sm-Fe layer comprises pure SmFe x polycrystalline film, x = 1.8-2. The preparation method comprises the following steps: sequentially depositing a Ta buffer layer, a Sm-Fe layer and a Ta cover layer on a substrate by using a magnetron sputtering technology, and performing annealing heat treatment on the obtained composite film to prepare the Sm-Fe-based permanent magnetic film. The Sm-Fe-based permanent magnetic film has excellent magnetic anisotropy in the vertical direction and has higher coercivity. The successful preparation of the good perpendicular anisotropy magnetic film has important application value in the application of micro-electro-mechanical systems, micro-electronic systems, magnetic recording materials and spin electronic devices.

A magnetic field detection sensor with: a magnetic impedance element designed to exploit a magnetic impedance effect; a bias coil designed to apply a bias field to the magnetic impedance element; an oscillator circuit designed to apply an alternating current to the magnetic impedance element; a differentiating circuit designed to differentiate an output signal of the magnetic impedance element; a flip-flop circuit configured to output a high-level signal and a low-level signal based on a trigger signal output by the differentiating circuit; and a computing unit configured to detect an external magnetic field based on a time course with high and low of the high-level signal and low-level signal output by the flip-flop circuit, wherein the magnetic field detection sensor is configured to detect the external magnetic field based on an output signal obtained by applying the alternating current to the magnetic impedance element, the magnetic impedance element comprises a non-magnetic substrate and a magnetic layer provided on a surface of the non-magnetic substrate, wherein a magnetic field detection direction coincides with a longitudinal direction of the magnetic impedance element and the magnetic layer is configured to have magnetic anisotropy such that a direction of an axis of its easy magnetizability coincides with the magnetic field detection direction, and The computing unit is configured to send a reset signal to the flip-flop circuit at the time of a drop in an AC bias frequency, and to detect the external magnetic field based on the duration of an initial high-level signal following the reset signal.

To provide a thermal spraying shield film capable of magnetically shielding low-frequency magnetism.SOLUTION: In a magnetic shield material and a manufacturing method thereof that deposits a shield film that shields magnetism by spraying on at least a part of the surface of a base material, a shield film 3 is formed using powder of a soft magnetic material that shields by absorbing low-frequency magnetism as a thermal spray material, and the soft magnetic material is sendust, permalloy, silicon steel, and another metal material, ferrite, or another ceramic.SELECTED DRAWING: Figure 1

This invention provides a high-permeability multilayer flexible soft magnetic film, its preparation method, and its applications. The multilayer flexible soft magnetic film is composed of alternating layers of magnetic metal layers and polymer insulating dielectric layers. Each magnetic metal layer is precisely controlled to be 200–900 nm thick, and each polymer insulating dielectric layer is controlled to be 100–500 nm thick, with the total thickness of the magnetic metal layers accounting for 30%–80%. Through this structural design, the polymer insulating dielectric layer effectively blocks interlayer eddy current paths, significantly suppressing high-frequency eddy current losses. Simultaneously, the high proportion of magnetic layers provides sufficient magnetic flux and magnetic loss contribution, avoiding insufficient magnetic performance due to excessively thick insulating layers or exacerbated eddy current losses due to excessively thick magnetic layers. Therefore, the imaginary peak value of the film's effective permeability is greater than 400, exhibiting excellent high-frequency magnetic loss, wave absorption, and noise suppression capabilities. Furthermore, the structure is stable and flexible, making it suitable for high-frequency filtering, electromagnetic compatibility, and other applications.

The present invention is a method for producing a diamond substrate in which a diamond crystal layer having a nitrogen vacancy center is formed on a base substrate using a CVD method and using a starting material gas containing a hydrocarbon gas and a hydrogen gas, the method comprising: forming a diamond crystal layer having a nitrogen vacancy center on at least a portion of the diamond crystal; nitrogen gas or nitride gas is mixed into the raw material gas, and the hydrocarbon gas is set to 0.005-6.000 vol% with respect to the amount of each gas contained in the raw material gas. The amount of hydrogen is 93.500 vol% or more and less than 99.995 vol%; nitrogen gas or nitride gas is set to 5.0 * 10 <-5 > vol% or more and 5.0 * 10 <-1 > vol% or less. As a result, provided is a method for producing a diamond substrate, whereby a diamond crystal having a high density of nitrogen-vacancy centers and having an NV axis in a [111] height orientation can be formed on a base substrate by CVD under predetermined conditions.

[Problem] To provide an information processing method, an information processing apparatus, and a magnetic element that, without requiring power for input, can be used as an information processing device (such as a sensor) in an independent system not supplied with power, can be made compact, can be realized at low cost, and that have lower power consumption. [Solution] In the present invention, on an elastically deformable substrate 2, a magnetic body layer 3 is provided, the layer comprising one or a plurality of magnetic bodies 4 the orientation of magnetization of which is responsive to strain. Through detection of the magnetization state of the magnetic bodies 4 constituting the magnetic body layer 3, including at least the orientation of magnetization of the magnetic bodies 4, information on the magnetization state is output as a result of input of strain to the substrate.

The present application provides a film that can achieve a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm 2 The in-plane magnetization film has a thickness of 20 nm or more and 80 nm or less, contains 45 at% or more and 80 at% or less of the metal Co, contains 20 at% or more and 55 at% or less of the metal Pt, contains 3 vol% or more and 25 vol% or less of the oxide with respect to the entirety of the in-plane magnetization film, and has an average particle diameter in the in-plane direction of the magnetic crystal grains of 15 nm or more and 30 nm or less.

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (∇tε = ∂εt / ∂t), where εt is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

To provide a magnetic head and a magnetic recording device capable of improving characteristics.SOLUTION: The magnetic head 113 includes the reproducing portion 70. The reproducing part 70 includes the first shield 41 including the first shield region 41a, the second shield 42 including the second shield region 42b, the reproducing elements 20s, the first terminals 51 electrically connected to the first shield 41, the second terminals 52 electrically connected to the second shield 42, and the third terminals 53. The reproducing elements 20s include a first magnetic layer 21, a second magnetic layer 22, and a third magnetic layer 23. The first magnetic layer 21 is provided between the first shield region 41a and the second shield region 42b. At least a portion of the second magnetic layer 22 is provided between the first shield region 41a and the first magnetic layer 21. The third magnetic layer 23 is provided between the first shield 41 and at least a portion of the second magnetic layer 22. The third terminal 53 is electrically connected to the second magnetic layer 22.SELECTED DRAWING: Figure 4

A nanoparticle magnetic film has a structure in which a first phase is dispersed in a second phase. The nanoparticle magnetic film has a nano-sized metal phase containing Fe and Co as a first phase, and oxygen and nitrogen are contained in a second phase. The metal phase contains one or more crystal grains. The mode frequency of the crystal grain diameter of the crystal grains on a volume basis in the nanoparticle magnetic film is 1.5 nm or more and 6.0 nm or less.

To provide FeCo-based alloy and target material each having excellent corrosion resistance and sputtering property.SOLUTION: FeCo-based alloy for a soft magnetic layer includes TCR element and TAM element. The balance is Fe, Co and inevitable impurities. The content (at%) of each element satisfies formula (1) 0.1≤TCR≤10.0, formula (2) 11.0≤TAM≤25.0, formula (3) 16.0≤[TCR / 2+TAM]≤25.0, and formula (4) 0.20≤[Fe / (Fe+Co)]≤0.80. The FeCo-based alloy has microstructure that consisting of (Fe,CO) phases having Fe and / or Co as a main constituent, and intermetallic compound phases including TCR element or TAM element. In this microstructure, the number of (Fe,Co) phases in which the diameter of the minimum circumscribed circle surrounding the outside of the (Fe,Co) phase exceeds 30 μm is 0.SELECTED DRAWING: Figure 1

A device that produces spin waves includes a base substrate, a transducer that includes a first plane defined by a first magnetic film and a second plane defined by a plurality of metal strips, and a second magnetic film having a spin-wave phase velocity lower than the first magnetic film. The second magnetic film is adjacent to the first magnetic film, and the first plane and the second plane are parallel. The plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film. The second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave.

To provide a tetragonal thin film structure with better properties.SOLUTION: A tetragonal thin film structure has a support substrate 10 having at least a portion of a (110) oriented main surface and a crystal structure belonging to the cubic or tetragonal crystal, and a tetragonal thin film 20 formed on the (110) oriented main surface of the support substrate 10 and having an in-plane orientation of one axis in the plane in contact with the main surface.SELECTED DRAWING: Figure 1A

This ferromagnetic ferroelectric material has ferroelectricity and ferromagnetism, and contains a compound represented by any one of general formulae (1) to (3). Bi1-xA2+ xFe1-xM4+ xO3 ... (1) (In the formula, A is Mg, Ca, or Sr, and M is a 4d element or a 5d element that can form a tetravalent ion. x satisfies 0.02 ≤ x ≤ 0.15.) Bi1-xA+ xFe1-xM5+ xO3 ... (2) (In the formula, A is Na or K, and M is a 4d element or a 5d element that can form a pentavalent ion. x satisfies 0.02 ≤ x ≤ 0.15.) Bi1-2xA2+ 2xFe1-xM5+ xO3 ... (3) (In the formula, A is Mg, Ca, or Sr, and M is a 4d element or a 5d element that can form a pentavalent ion. x satisfies 0.02 ≤ x ≤ 0.15.)

A deposition device may deposit, on a substrate, a binder layer that includes a first set of magnetic flakes and a second set of magnetic flakes and may cause, when a temperature of the binder layer satisfies a temperature threshold (e.g., a Curie temperature of the first set of magnetic flakes), a magnetic field to be applied to the binder layer to cause the first set of magnetic flakes and the second set of magnetic flakes to be oriented according to the magnetic field. The deposition device may cause, when the temperature of the binder layer ceases to satisfy the temperature threshold, another magnetic field to be applied to the binder layer to cause only the second set of magnetic flakes to be oriented according to the other magnetic field.

There is provided a magnetic composite including a ferrite layer and having excellent heat resistance, the ferrite layer being dense, having a relatively large film thickness, having an excellent effect of reducing magnetic loss at a high frequency, and having excellent adhesion. The magnetic composite includes a non-metallic inorganic base material and a ferrite layer provided on a surface of the non-metallic inorganic base material. The non-metallic inorganic base material has a thickness (dM) of 2.0 µm or more. In addition, the ferrite layer has a thickness (dF) of 2.0 µm or more and 50.0 µm or less, and contains spinel-type ferrite as a principal component. Further, a content of α-Fe2O3 in the ferrite layer is 3.0 mass% or more and 25.0 mass% or less.

To provide a magnetic memory element capable of writing and reading information by a magnetic field at a room temperature.SOLUTION: A magnetic memory element comprises: a thin film composed of a chemical compound expressed by the following formula (1); a first electrode arranged at the thin film; and a second electrode arranged at the thin film. BiFe1-xAxO3...(1) [In the formula (1), A is Co or Mn, and x satisfies 0.05≤x<0.25.] The first electrode and the second electrode are arranged so that an electric field occurs in a direction parallel to the thin film by applying a voltage between the first electrode and the second electrode.SELECTED DRAWING: Figure 4

A magnetic assembly for use in a circulator application that includes a ferrite- based material having an elemental formula that identifies a number of formula units for each element in the formula; the elemental formula including both the elements of vanadium and aluminum with the number of formula units (x) for vanadium being less than or equal to 0.22 and the number of formula units (y) for aluminum being less than 0.60; and a dielectric material that surrounds at least a portion of the ferrite-based material. The ferrite-based material and the dielectric material directly form a chemical bond there between in the absence of any polymers, adhesives or glues. The ferrite- based material may include the composition described by the formula Y2.28Cao.72Fe4.23Zro.32VxAlyO12, wherein 0.15 < x < 0.22, 0.0 < y < 0.6, and 0.15 < x+y < 0.75.

A thermoelectric conversion element is made of an alloy including a transition metal. The alloy is a compound having a crystal structure including a Kagome lattice plane constituted by the transition metal, and exhibits an anomalous Nernst effect. A thermoelectric conversion device includes a substrate and a plurality of thermoelectric conversion elements on the substrate. Each of the plurality of thermoelectric conversion elements is defined as the thermoelectric conversion element described above and has a shape extending in one direction. The plurality of thermoelectric conversion elements are arranged in parallel in a direction perpendicular to the one direction and electrically connected in series.