73 results about "OXYGEN EXPOSURE" patented technology

It has been found that the insertion of a copper laminate within CoFe, or a CoFe / NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and / or the position and number of the oxygen treated copper laminates.

A mouthpiece that adjusts manually in the mouth and seals the treatment area. It includes light emitters and heat generators. Textured bands guide and direct light to diffuse evenly. A seal bead seals the gum above the teeth. For whitening, a whitening gel is first applied to the user's teeth, the mouthpiece is then positioned in the user's mouth, and the seal bead seals against the user's gums. Then, the light emitter(s) and heat generator(s) are activated to effect the whitening while causing an increase in the temperature enabling the user to mold the mouthpiece to their mouth.

It has been found that the insertion of a copper laminate within CoFe, or a CoFe / NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and / or the position and number of the oxygen treated copper laminates.

A CMOS structure is disclosed in which a first type FET contains a liner, which liner has oxide and nitride portions. The nitride portions are forming the edge segments of the liner. These nitride portions are capable of preventing oxygen from reaching the high-k dielectric gate insulator of the first type FET. A second type FET device of the CMOS structure has a liner without nitride portions. As a result, an oxygen exposure is capable to shift the threshold voltage of the second type of FET, without affecting the threshold value of the first type FET. The disclosure also teaches methods for producing the CMOS structure in which differing type of FET devices have their threshold values set independently from one another.

A mouthpiece that adjusts manually to accommodate a broad range of different size sets of upper and lower teeth in the mouth and yet seals the treatment area from oxygen exposure. The mouthpiece includes light emitting diodes and heat generating resistors all arranged in an array. A series of parallel texture bands are provides to guide and direct the light from the LEDs to diffuse generally evenly onto teeth to be treated. The seal arises from an inner surface of the mouthpiece titling inwardly so that a seal bead seals in the vicinity of the gum above the teeth to be treated.

FET device structures are disclosed with the PFET and NFET devices having high-k dielectric gate insulators, metal containing gates, and threshold adjusting cap layers. The NFET gate stack and the PFET gate stack each has a portion which is identical in the NFET device and in the PFET device. This identical portion contains at least a gate metal layer and a cap layer. Due to the identical portion, device fabrication is simplified, requiring a reduced number of masks. Furthermore, as a consequence of using a single layer of metal for the gates of both type of devices, the terminal electrodes of NFETs and PFETs can be butted with each other in direct physical contact. Device thresholds are further adjusted by oxygen exposure of the high-k dielectric. Threshold values are aimed for low power consumption device operation.

A mouthpiece that adjusts manually to accommodate a broad range of different size sets of upper and lower teeth in the mouth and yet seals the treatment area from oxygen exposure. The mouthpiece includes one or more light emitters and one or more heat generators. A series of parallel texture bands are provided to guide and direct the light from the light emitters to diffuse generally evenly onto teeth to be treated. The seal arises from an inner surface of the mouthpiece tilting inwardly so that a seal bead seals in the vicinity of the gum above the teeth to be treated. Method for effecting an oral treatment such as whitening or desensitizing teeth or treating gum disease. For whitening, a whitening gel is applied to the user's teeth, the mouthpiece is then positioned in the user's mouth such that a bite surface is between upper and lower arches, a main body is between a front surface of the teeth and an inner surface of the user's lips, and a seal bead is against the user's gums. Then, the light emitter(s) and heat generator(s) are activated to effect the whitening while causing an increase in the temperature of the main body thereby enabling the user to mold the main body and conform its shape to their mouth.

A mouthpiece that adjusts manually to accommodate a broad range of different size sets of upper and lower teeth in the mouth and yet seals the treatment area from oxygen exposure. The mouthpiece includes light emitting diodes and heat generating resistors all arranged in an array. A series of parallel texture bands are provides to guide and direct the light from the LEDs to diffuse generally evenly onto teeth to be treated. The seal arises from an inner surface of the mouthpiece tilting inwardly so that a seal bead seals in the vicinity of the gum above the teeth to be treated.

A mouthpiece that adjusts manually to accommodate a broad range of different size sets of upper and lower teeth in the mouth and yet seals the treatment area from oxygen exposure. The mouthpiece includes light emitting diodes and heat generating resistors all arranged in an array. A series of parallel texture bands are provides to guide and direct the light from the LEDs to diffuse generally evenly onto teeth to be treated. The seal arises from an inner surface of the mouthpiece titling inwardly so that a seal bead seals in the vicinity of the gum above the teeth to be treated.

A mouthpiece that adjusts manually to accommodate a broad range of different size sets of upper and lower teeth in the mouth and yet seals the treatment area from oxygen exposure. The mouthpiece includes light emitting diodes and heat generating resistors all arranged in an array. A series of parallel texture bands are provides to guide and direct the light from the LEDs to diffuse generally evenly onto teeth to be treated. The seal arises from an inner surface of the mouthpiece tilting inwardly so that a seal bead seals in the vicinity of the gum above the teeth to be treated.

Systems and methods for preserving a perishable material sensitive to oxygen and bacterial spoilage are taught. The systems in some embodiments comprise a pressurized source of a first gas other than oxygen and a container for the perishable material, the container having a sealable lid, a passage including a one-way valve through the lid connected by a gas conduit to the pressurized source, and a mechanism for venting the container. In various embodiments oxygen exposure to the perishable material in the container is diluted by at least one cycle of pressurizing the container with the first gas other than oxygen, and then venting the container. In some embodiments oxygen dilution is by vacuum.

A CMOS structure is disclosed in which both type of FET devices have gate insulators containing high-k dielectrics, and gates containing metals. The threshold of the two type of devices are adjusted in separate manners. One type of device has its threshold set by exposing the high-k dielectric to oxygen. During the oxygen exposure the other type of device is covered by a stressing dielectric layer, which layer also prevents oxygen penetration to its high-k gate dielectric. The high performance of the CMOS structure is further enhanced by adjusting the effective workfunctions of the gates to near band-edge values both NFET and PFET devices.

A CMOS structure is disclosed in which a first type FET has an extremely thin oxide liner. This thin liner is capable of preventing oxygen from reaching the high-k dielectric gate insulator of the first type FET. A second type FET device of the CMOS structure has a thicker oxide liner. As a result, an oxygen exposure is capable to shift the threshold voltage of the second type of FET, without affecting the threshold value of the first type FET. The disclosure also teaches methods for producing the CMOS structure in which differing type of FET devices have differing thickness liners, and the threshold values of the differing type of FET devices is set independently from one another.

The invention provides an automatic system based on the dynamic adaptability strategy for controlling oxygen concentration in blood of patients with fluctuating oxygen needs. The inventive system monitors patient's clinical measurement data and updates the system continuously, which provides changes in FiO2 and gas flow that are more patient specific and reduce the patient's unnecessary oxygen exposure.

A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

FET device structures are disclosed with the PFET and NFET devices having high-k dielectric gate insulators and metal containing gates. The metal layers of the gates in both the NFET and PFET devices have been fabricated from a single common metal layer. Due to the single common metal, device fabrication is simplified, requiring a reduced number of masks. Also, as a further consequence of using a single layer of metal for the gates of both type of devices, the terminal electrodes of NFETs and PFETs can be butted to each other in direct physical contact. Device thresholds are adjusted by the choice of the common metal material and oxygen exposure of the high-k dielectric. Threshold values are aimed for low power consumption device operation.

The invention discloses a method for preparing cerium dioxide having different morphologies. The method comprises the following steps: dispersing Ce(NO3)3.6H2O in a NaOH solution, carrying out a hydrothermal reaction at different temperatures, washing the obtained reaction product, drying the washed reaction product, and calcining the dried reaction product at a high temperature to obtain the cerium dioxide having different morphologies. Electrochemiluminescence performance studies show that the cerium oxide has different oxidabilities and different oxygen vacancies due to different structuresand different oxygen exposure ways, the electrochemiluminescence performance of the cerium oxide has no close relationship with the oxidability, but is related to the oxygen vacancies, and the smallcontent of the oxygen vacancies facilitates the electrochemiluminescence reaction. The cubic cerium dioxide has a strong and stable electrochemiluminescence signal, and has a strongest electrochemiluminescence intensity, so the cubic cerium dioxide can be used to construct an electrochemiluminescence sensor, and the sensor has the characteristics of fast analysis speed and high sensitivity when used to detect heavy metal ions, biological micro-molecules, tumor markers and the like.

It is known to provide a reoxidation step in the manufacture of a MOSFET that serves a number of structural purposes in relation to the MOSFET. However, the need to provide materials of high dielectric constant for gate insulator layers of MOSFETs to accommodate a drive for smaller integrated circuits has led to excessive growth of an SiO2 interfacial layer between the gate insulator layer and a substrate. Excessive growth of the SiO2 layer results in an Effective Oxide Thickness that leads to increased leakage current in the MOSFET. Further, the replacement of polysilicon with metals as electrodes precludes oxygen exposure during processing. Consequently, the present invention provides replacing or preceding the reoxidation step with the deposition of an oxygen barrier layer over at least side walls of a gate electrode of the MOSFET, thereby providing a barrier for oxygen diffusion to the dielectric interface and metal gate electrode that prevents EOT increase and preserves metal gate electrode integrity.

FET device structures are disclosed with the PFET and NFET devices having high-k dielectric gate insulators, metal containing gates, and threshold adjusting cap layers. The NFET gate stack and the PFET gate stack each has a portion which is identical in the NFET device and in the PFET device. This identical portion contains at least a gate metal layer and a cap layer. Due to the identical portion, device fabrication is simplified, requiring a reduced number of masks. Furthermore, as a consequence of using a single layer of metal for the gates of both type of devices, the terminal electrodes of NFETs and PFETs can be butted with each other in direct physical contact. Device thresholds are further adjusted by oxygen exposure of the high-k dielectric. Threshold values are aimed for low power consumption device operation.

The invention relates to a method for producing a high-macroelement liquid organic special fertilizer. The method comprises the following steps: selecting raw materials, pretreating the raw materials, performing anaerobic fermentation, performing slag-liquid separation, performing oxygen exposure filtration, mixing and blending and performing refined filtration filling. The content of the macroelement is improved to a high level, and the topdressing problem of organic cultivation is solved; and moreover, the production efficiency is high, the cost is low, and the problems that waste of biogas slurry and sewage is severe even the environment is polluted are solved.

A method for fabricating an FET device is disclosed. The method includes providing a body over an insulator, with the body having at least one surface adapted to host a device channel. Selecting the body to be Si, Ge, or their alloy mixtures. Choosing the body layer to be less than a critical thickness defined as the thickness where agglomeration may set in during a high temperature processing. Such critical thickness may be about 4 nm for a planar devices, and about 8 nm for a non-planar devices. The method further includes clearing surfaces of oxygen at low temperature, and forming a raised source / drain by selective epitaxy while using the cleared surfaces for seeding. After the clearing of the surfaces of oxygen, and before the selective epitaxy, oxygen exposure of the cleared surfaces is being prevented.

The detrimental effect of oxygen exposure on the formation of polyacrylamide electrophoresis gels in oxygen-permeable plastic cassettes is reduced or eliminated either by the use of an oxygen barrier material over the surfaces of the plastic walls of the cassette through which oxygen would otherwise pass into the cassette cavity, or by the incorporation of an oxygen scavenger in the plastic from which the cassette walls are made, or both.

A CMOS structure is disclosed in which a first type FET contains a liner, which liner has oxide (20) and nitride (20') portions. The nitride portions are forming the edge segments of the liner. Thesenitride portions are capable of preventing oxygen from reaching the high-k dielectric gate insulator (10) of the first type FET. A second type FET device of the CMOS structure has a liner without nitride portions (21). As a result, an oxygen exposure is capable to shift the threshold voltage of the second type of FET, without affecting the threshold value of the first type FET. The disclosure alsoteaches methods for producing the CMOS structure in which differing type of FET devices have their threshold values set independently from one another.

This method includes an electrode pad forming process for forming an electrode pad on a substrate, a solder bump forming process for forming a solder bump on the electrode pad, at least part of the surface of the solder bump being covered with a flux, and an oxygen exposure process for supplying an oxygen gas having reactive properties, such as an ozone (O3) gas, to the solder bump.

The invention discloses a eutrophic water body repairing compound ecosystem construction method and an artificial reef. In construction, a tip of the artificial reef with submerged plants is insertedinto water body bottom mud, alga organisms are put into a water body after the submerged plants grow stably and appropriate oxygen exposure is performed, biological compound bacteria are put into after the alga organism population is stable, and appropriate maintenance is performed until a system is complete. The artificial reef comprises a hollow artificial reef body made of volcanic rock, wherein gel containing plant root stem bottom ends is added into the hollow position of the artificial reef body, the surface of the artificial reef body is coated with a solidified layer of a sodium alginate gel solution, the hollow artificial reef body is optimally in a conical shape, and the conical tip is inserted into the bottom mud. The compound ecosystem disclosed by the invention has the advantages of simpleness in construction operation, short period, low cost, strong applicability, ability in keeping the water body clear to the bottom for a long time, certain kitchen garbage treatment capability and certain capability in ecologically breeding loaches with high nutritional value.

The invention relates to a preparation method of a cross linker of reducing-complex polymer chrome. (1), water and sodium acid chromate are added into a reactor; (2), oxalic acid is added in batches under stirring; (3), the temperature is raised between 60 and 80 DEG C and then a stirring reaction with a constant temperature is carried out for 1 to 2 hours; (4) aqueous alkali is slowly added under stirring and reacted for 1 hour; the mol ratio of Cr(III) to the oxalic acid is 1:7 to 9; the mass ratio of the sodium acid chromate to water is 1:2 to 4.8; the aqueous alkali is the water liquor of sodium hydroxide or potassium hydroxide with a concentration of 10 to 50 percent and the dosage of the aqueous alkali is 2.2 to 11.3 percent of the mass of the oxalic acid; the material varieties are less; the preparation process is simply operated; the cross linker has no pungent smells and has the advantages of gelatinizing performance delaying, adjustable gelatinizing time, large scale of the gelatinizing concentration, low using amount and low polymer consumption; the lowest gelatinizing concentration of HPAM can achieve 600mg / L; a formed gelatinizing system is stable in performance which can be stable for more than 60 days under the oxygen exposure condition of 60 DEG C.