36 results about "Quantum dot display" patented technology

The invention relates to the technical field of quantum dot material performance detection, in particular to a transient photoelectric detection method for the aging degree of a quantum dot display screen material. Comprising the following steps: repeating multiple groups of excitation tests, calibrating core photoelectric parameters of an unaged standard sample and constructing a dynamic threshold library, and performing synchronous photoelectric signal acquisition and real-time compensation correction on a to-be-detected sample in a controlled environment; the collected transient signals are corrected, and three core parameters of fluorescence decay lifetime, transient current peak and carrier mobility are extracted; dynamically adjusting the threshold weight according to the quantum dot type and the use environment, comparing the extraction parameter with the dynamic threshold, judging the non-aging grade and the aging grade according to the comparison result, and generating a judgment report; through the mode, the signal acquisition quality is improved, and the actual requirements of high precision, high efficiency and nondestructive testing are met.

The invention belongs to the technical field of quantum dot display and polymer composite materials, and particularly discloses a PVDC-based composite material, a preparation method and a quantum dot diffusion plate comprising the PVDC-based composite material. Polyvinylidene chloride (PVDC) resin, general purpose polystyrene (PS), polycarbonate (PC), CdSe quantum dots, styrene-maleic anhydride copolymer SMA, methyl methacrylate-glycidyl methacrylate copolymer PMMA-co-GMA, an antioxidant and a nano diffusant are used as raw materials, and the composite material is prepared through a multi-layer co-extrusion technology. According to the invention, a symmetric barrier layer is formed by PVDC resin, water and oxygen erosion is effectively isolated, strong interface bonding is formed by utilizing the interaction of anhydride groups of SMA and chlorine atoms of PVDC and the reaction of epoxy groups of PMMA-co-GMA and PC end groups, and efficient light conversion and uniform diffusion are realized through the synergistic optical effect of quantum dots and a diffusant.

To provide a quantum dot light emitting element having a light emitting layer containing quantum dots, exhibiting excellent element characteristics, low voltage drive, high luminous efficiency, and long drive life.SOLUTION: The composition for forming the light-emitting layer of a quantum dot light-emitting element includes quantum dots, a compound represented by the following formula (1), and an organic solvent. The quantum dot light emitting element has an anode 2, a cathode 7, and a light emitting layer 5, and the light emitting layer includes quantum dots and a compound represented by the following formula (1).SELECTED DRAWING: Figure 1

The colored photosensitive resin composition of the present invention maintains excellent resolution, visibility, and the like while it has excellent reflectance RSCI measured by the SCI (specular component included) method, reflectance RSCE measured by the SCE (specular component excluded) method, and the ratio between them (RSCE / RSCI), and has a uniform film thickness in an appropriate range. Thus, it can be formed into a multilayer cured film that simultaneously satisfies such physical properties as a high reflectance and a high light-shielding property. In addition, when a cured film is formed from the composition, it is possible to form a pattern on a multilayer film in a single development process. Thus, it can be advantageously used for a quantum dot display device.

The application provides a quantum dot display device, comprising a light-emitting assembly and a display panel located on the light-emitting side of the light-emitting assembly, wherein the light-emitting assembly comprises a reflecting cavity, an excitation light source assembly and a plurality of pixel units; the reflecting cavity has an entrance; the reflecting cavity comprises a total reflection surface; the excitation light source assembly is used for emitting excitation light and making the excitation light enter the total reflection surface from the entrance for total reflection; each pixel unit comprises a plurality of sub-pixel filling cavities; the sub-pixel filling cavities are arranged in the reflecting cavity; the sub-pixel filling cavities are filled with quantum dots; and the quantum dots in different sub-pixel filling cavities in any pixel unit emit light of different colors after being excited by the excitation light. The application solves the problem of low color gamut caused by the limited light transmittance and brightness of the existing liquid crystal display.

The present invention relates to an optical device (100) for a display device comprising: i) a substrate (110); ii) one or more of gratings (120) placed onto the substrate; and iii) one or more of recessed grooves (130) at least partly filled by a material (140). The optical device may be made by using an advanced material or by using a high-performance material. The optical device may be used to make display device application, for example, a Liquid crystal display (LCD), Light emitting diode display (LED display), organic light emitting display (OLED), micro-LED display, quantum dot display (QLED), Augmented Reality (AR) hardware, Virtual Reality (VR) hardware, Mixed Reality (MR) hardware, plasma (PDP) display and an electroluminescent (ELD) display.

The application provides a quantum dot display panel and a display device. The quantum dot display panel comprises: a substrate substrate; a light-emitting chip arranged above the substrate substrate; a quantum dot unit arranged above the light-emitting chip; and a polaroid arranged around the light-emitting chip. The application changes the light path of the light emitted by the light-emitting chip by arranging the polaroid around the light-emitting chip, so that the originally diverging light is concentrated and emitted to the quantum dot unit along the vertical direction; the influence of other light-emitting chips around is reduced, and the crosstalk phenomenon is avoided.

The application discloses a synthesis method of quantum dot photoresist, which adopts long-chain ligands of oleic acid and oleylamine, takes a polar solvent as a reaction solvent, adds lead halide and a cesium source as precursor substances, generates high-quality perovskite quantum dots in one step, then removes surface ligands of the perovskite quantum dots through reagents to form surface defects, makes the perovskite quantum dots have electronegativity, and then adds halide ligands capped with ammonium to combine with defects on the surface of the quantum dots to prepare the photoresist. The application not only improves the stability of the quantum dot photoresist, but also enhances the force between the quantum dots and the photosensitive ligands, thereby realizing controllable preparation of a high-precision quantum dot display array device, facilitating mass production, solving the complex process of multi-color conversion of a small display screen, and having a simpler process, higher stability, higher color purity and larger display color gamut compared with other existing products, and being helpful to promote Mini LED / Micro LED colorization application.

The present invention relates to a composition, preferably being a coating composition for forming an optical layer, comprising one or more of nanoparticles; and a silsesquioxane polymer. The composition of the present invention be used to make display device application, for example, a Liquid crystal display (LCD), Light emitting diode display (LED display), organic light emitting display (OLED), micro-LED display, quantum dot display (QLED), Augmented Reality (AR) hardware, Mixed Reality (MR) hardware, plasma (PDP) display and an electroluminescent (ELD) display.

The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a substrate, a light-emitting functional layer and a color conversion structure layer, the light-emitting functional layer comprises a plurality of light-emitting units with the same light-emitting color; the color conversion structure layer is arranged on the side, away from the substrate, of the light-emitting functional layer and comprises a plurality of quantum dot units, each quantum dot unit comprises quantum dot particles, and the orthographic projection of each quantum dot unit on the substrate and the orthographic projection of the light-emitting unit on the substrate are at least partially overlapped; the curing temperature of raw materials of the color conversion structure layer is smaller than or equal to the preset temperature. According to the quantum dot display panel, the product performance and the manufacturability of the quantum dot display panel are improved.

According to a method for manufacturing a quantum dot display device, according to exemplary embodiments of the present invention, a quantum dot light-emitting layer is formed on a first substrate. A double layer is formed by laminating an electron transport layer on the upper surface of the quantum dot light-emitting layer. The double layer is picked up using a stamp having a surface portion with a higher Young's modulus than a center portion. The double layer picked up using the stamp is transferred onto a second substrate. After the step of transferring onto the second substrate, the surface roughness of the lower surface of the quantum dot light-emitting layer is 0.1 nm to 10 nm.

The application discloses a preparation method of an ultra-smooth organic film layer. The film coating is carried out on the surface of inorganic film layers such as silicon oxide and aluminum oxide, and the process comprises three process procedures of organic matter flashing, organic matter flowing and organic film layer polymerization. The organic film layer prepared by the method has the following effects: on the one hand, the inorganic film layer is planarized, and the roughness is reduced from 20 nm to within 3 nm; and on the other hand, the organic layer can compensate for microscopic defects such as pinholes and micro-cracks, prolong the path of gas molecules, and can prepare a high-barrier thin film. The organic diaphragm prepared by the application is obtained by flashing through the winding method on the surface of the oxide film layer, the thin film product has the ultra-smooth characteristic, the roughness is less than 3 nm by using an atomic force microscope, and can be applied in the fields of quantum dot display, photovoltaic, photoelectric material packaging and barrier film.

Disclosed is a quantum dot device and a quantum dot display apparatus including the same, the quantum dot device including: an anode disposed on a substrate and including a reflective layer; a hole auxiliary layer disposed on the anode and including a hole injection layer, a hole transport layer, or a combination thereof; a quantum dot layer disposed on the hole auxiliary layer and including quantum dots; an electron auxiliary layer disposed on the quantum dot layer; and a cathode disposed on the electron auxiliary layer, the cathode being a light transmitting electrode capable of transmitting at least a portion of light emitted from the quantum dot layer, wherein the quantum dot layer is configured to emit light of a first wavelength spectrum, the first wavelength spectrum being one of a blue wavelength spectrum, a green wavelength spectrum, and a red wavelength spectrum, the hole auxiliary layer has a thickness that causes a resonance wavelength of the quantum dot device to fall within the first wavelength spectrum, a peak emission wavelength of the quantum dot layer and a peak emission wavelength of light that passes through the cathode collectively belong to the first wavelength spectrum, and a full width at half maximum of an emission spectrum of the light that passes through the cathode is narrower than a full width at half maximum of an emission spectrum of the quantum dot layer.

The invention belongs to the technical field of nano material preparation and micro-nano pattern processing, and particularly relates to a nanocrystal capable of being directly subjected to photoetching patterning as well as a preparation method and application of the nanocrystal, a surface ligand of the nanocrystal comprises molecules containing a conjugated double bond structure, and light-induced free radical crosslinking can be generated under ultraviolet irradiation; the preparation method of the nanocrystal comprises the following steps: adding the molecule containing the conjugated double bond structure as a ligand into a reaction system in the synthesis process of the nanocrystal, so that the nanocrystal forms a photoetching surface interface; the nanocrystal material can be directly patterned under the conditions of no photoresist and no photoinitiator; the nanocrystal is used for photoetching patterning and has the characteristics of high patterning resolution, good film forming uniformity and the like, the luminescence property of the nanocrystal after photoetching is kept good, the environmental stability and mechanical strength of patterns can be enhanced, and the nanocrystal has wide applicability and expandability and can be widely applied to the field of photolithography. And an efficient and simple preparation means is provided for future high-resolution quantum dot display.

The application discloses a kind of high water oxygen barrier quantum dot diffusion composite material and preparation method and application, belong to optical display technical field, including the water oxygen barrier layer and quantum dot layer of alternative lamination.Its preparation method includes the following steps: water oxygen barrier layer blending granules and quantum dot layer blending granules are respectively dried, using alternative multilayer co-extrusion equipment is co-extruded, obtains the high water oxygen barrier diffusion composite material.The application also discloses the application of the high water oxygen barrier diffusion composite material in quantum dot display.The application not only simplifies the complex structure of backlight module, also realizes light diffusion, substantially improves the light, heat stability and fluorescence lifetime of quantum dot, provides new method for large-scale application of quantum dot display.The preparation method provided by the application is extrusion molding method, production process is simple, production efficiency is high, preparation process is continuous, simple, green, efficient, product batch stability is high, with wide application prospect.

The application discloses a deuterated 1-aryl-substituted carbazole compound and a preparation method and application thereof, and belongs to the technical field of organic optoelectronics. The 1-substituted carbazole compound containing a deuterium atom designed by the application is isotopic deuterium on a benzene ring of hydrogen. The introduction of deuterium can improve the charge transport performance of the compound and improve the thermal stability of the compound. The molecules can be used for a hole transport layer of a red, green and blue electroluminescent device. An organic electroluminescent device produced by taking the material as the hole transport layer can reduce a driving voltage, improve luminous efficiency, has excellent color purity, has a longer device life, and has great application potential. The 1-substituted carbazole compound containing the deuterium atom designed by the application is expected to be applied to a new generation of organic electronic device products such as an organic light emitting display and a quantum dot display.

To provide a quantum dot light-emitting device which has a luminous layer containing quantum dots, exhibits excellent device characteristics, is driven at low voltage, and has high luminous efficiency and a long driven life.SOLUTION: A composition for forming a luminous layer of a quantum dot light-emitting device comprises quantum dots, a compound represented by formula (1) in the figure, and an organic solvent. (In formula (1), Ar31, Ar32 and Ar33 each independently represent an optionally substituted C6-30 aromatic hydrocarbon group, an optionally substituted C3-30 heteroaromatic group, or a monovalent group in which 2-7 structures selected from optionally substituted C6-30 aromatic hydrocarbon groups and optionally substituted C3-30 heteroaromatic groups are linked.)SELECTED DRAWING: Figure 1

The application discloses a kind of water-based quantum dot microcrystal diffusion plate, it is related to water-based quantum dot microcrystal diffusion plate technical field, its technical scheme is: including bottom plate, the bottom plate top is equipped with T-shaped slot, four are symmetrically distributed in T-shaped slot front and back, the bottom plate top is equipped with auxiliary side plate, the auxiliary side plate is provided with four, four The auxiliary side plate is all set to T-shaped, four The auxiliary side plate bottom outer wall and T-shaped slot inner wall are slidably detachably connected, the bottom plate top is bonded glass plate, the present application is by bottom plate and glue layer one together into external oscillation equipment and is oscillated and most glue layer one is sealed, glue layer one periphery environment is extracted vacuum, eliminate residual oxygen bubble in glue layer one, eliminate residual oxygen in glue layer one periphery, to avoid oxygen into glue layer one inside influence red water-based quantum dot and green water-based quantum dot display effect when emitting light.

The invention discloses an optical film based on nano quantum dots and a preparation method thereof, and relates to the technical field of functional optical film materials for quantum dot display. The optical film based on the nano quantum dots is prepared by taking polyethylene glycol terephthalate as a base material and coating the base material with paint, the coating is prepared from the following raw materials in parts by weight: 1.4 to 2.0 parts of modified quantum dots, 65 to 80 parts of waterborne polyurethane, 16 to 23 parts of methyl methacrylate, 2.6 to 4.0 parts of modified nano silicon dioxide, 0.6 to 1.3 parts of polydimethylsiloxane, 3.5 to 5.5 parts of trimethylolpropane triacrylate, 0.4 to 0.7 part of benzophenone, 0.6 to 1.2 parts of aziridine, 27 to 42 parts of absolute ethyl alcohol, 5.5 to 9 parts of deionized water and 0.3 to 0.5 part of a silane coupling agent KH-560. The optical film is accurate in raw material ratio and contains the modified quantum dots and the modified nano silicon dioxide, so that the optical performance and the stability of the optical film can be effectively improved; the modification process is perfect, and the compatibility and temperature resistance of the particles are optimized; technologies such as gradient ultrasound and temperature-controlled defoaming are integrated to guarantee the quality of the film layer; the curing environment is controllable, film layer defects are reduced by means of nitrogen protection and secondary curing, and the comprehensive performance of the product is improved.

The invention relates to a photoluminescence quantum dot color conversion layer structure, which relates to the field of photoelectric display and comprises a substrate, a quantum dot color conversion unit and a black matrix, the inner wall of the black matrix is a reflecting material; first accommodating spaces are formed between adjacent black matrixes, and quantum dot color conversion layer units are loaded in the first accommodating spaces; the first accommodating space is wide in lower edge and narrow in upper edge, the lower edge of the first accommodating space is a laser light inlet, and the upper edge of the first accommodating space is a light outlet; incident laser is limited by the emission layer of the black matrix and is repeatedly reflected in the quantum dot color conversion layer unit, the quantum dot color conversion layer unit absorbs the incident laser and emits emergent light relative to the quantum dot color conversion layer, and the emergent light is output from the light outlet. According to the quantum dot display structure, the light extraction efficiency and the display performance are remarkably improved while the thickness of the quantum dot color conversion layer is reduced, and an innovative solution is provided for thickness sensitive type display equipment.

Embodiments of the present disclosure provide a quantum dot material including a quantum dot body and a primary ligand A″ and a secondary ligand B″ coated on a surface of the quantum dot body, and a carbon chain length of the primary ligand A″ is 1.3 to 4.5 times a carbon chain length of the secondary ligand B″.

The present invention relates to a method for fabricating an optical waveguide comprising following steps (A) to (D),(A) Selecting metal oxide precursor materials, or mixtures of metal oxide precursor materials, such that even when multiple cured films are produced separately, and exhibit differing refractive index (RI) values at 530 nm within the range of 1.7 to 2.3, preferably 1.8 to 2.2, the ratio of the refractive index at 450 nm (R450) to that at 630 nm (R630) consistently remains between 1.015 and 1.045, preferably between 1.015 and 1.040;(B) preparing a formulation containing the selected metal oxide precursor or the mixture of the metal oxide precursors;(C) providing the formulation obtained in step (B) over a surface of a substrate to form a curable composite, preferably by wet deposition process, more preferably by spin-coating or ink-jetting, even more preferably by ink-jetting; and(D) curing the formulation, preferably by heat, by UV irradiation to obtain a cured composite.Obtained optical waveguides may be used in display device applications, for example a Liquid crystal display (LCD), Light emitting diode display (LED display), organic light emitting display (OLED), micro-LED display, quantum dot display (QLED), AR display, VR display, MR display, plasma (PDP) display, electroluminescent (ELD) display fabricated on a substrate controlled by semiconductors.

The application discloses a quantum dot display panel and a preparation method thereof. The preparation method of the quantum dot display panel comprises the following steps: providing a transfer assembly plate, wherein the transfer assembly plate comprises a transfer substrate and a limiting mesh plate, a plurality of limiting holes are arranged on the limiting mesh plate, a plurality of accommodating grooves are arranged on the transfer substrate, and the limiting holes are located opposite to at least part of the accommodating grooves; forming a light-emitting material on the transfer assembly plate, wherein the light-emitting material is formed in the accommodating grooves, and the light-emitting material comprises quantum dot material; and aligning the transfer substrate carrying the light-emitting material with a receiving substrate, and transferring the light-emitting material to the receiving substrate. Through the above method, the quantum dot display can be mass-produced in a large area and at a low cost.

The utility model relates to a quantum dot display element structure. A quantum dot light-emitting layer is arranged between a first electrode layer on a first substrate and a second electrode layer on a second substrate; a first insulating layer on the first substrate comprises a plurality of structural units spaced by a spacer region, and the spacer region exposes the first electrode layer; a first layer auxiliary circuit arranged between the first insulating layer and the first electrode layer, connected with the first electrode layer and surrounding the plurality of structural units; a second insulating layer on the first insulating layer is provided with a second opening and a second-layer auxiliary circuit, the second opening is communicated with the interval area, and the second-layer auxiliary circuit surrounds the interval area. The quantum dot display element structure arranged in multiple layers allows wider wiring, so that the brightness and the uniformity of quantum dots generated by the quantum dot light-emitting layer are improved.

A quantum dot material includes: a quantum dot and a ligand for modifying the quantum dot. The ligand is coordinately bound to the quantum dot, has a photosensitive isomerization property, is a derivative of azobenzene, and contains a urea group and a pyrimidinone group.

The invention provides a quantum dot display panel, a preparation method thereof and a display device.The preparation method of the quantum dot display panel comprises the steps that S1, a transparent substrate is spin-coated with photoetching liquid, multiple pixel pits are developed through photoetching after curing, and a pixel defining layer is formed; s2, transparent ink is printed in pixel pits of the pixel defining layer, and a concave lens shape is formed through ink climbing; printing quantum dot ink to fill the pixel pits; s3, the transparent substrate in the step S2 is inverted and attached to a blue light backlight plate, and the quantum dot display panel is formed.

The invention discloses a nanoimprint-based ultrahigh-resolution ultrahigh-pixel-density quantum dot display device manufacturing process, and relates to the field of photoelectric display, and the nanoimprint-based ultrahigh-resolution ultrahigh-pixel-density quantum dot display device manufacturing process comprises the following steps: preparing a nanoscale concave pattern PDMS seal; a matrix Wheatstone bridge array is prepared on the back of the substrate, and the front of the substrate is covered with a polar material and pressed with a seal; the pressure distribution of the whole board is monitored in real time through a bridge array in the imprinting pressure maintaining stage, and the pressure is dynamically and finely adjusted in combination with a distributed piezoelectric actuator, so that the uniformity is ensured; and annealing, separating the seal, spin-coating an insulating material, depositing a functional layer (from a hole injection layer to a metal cathode), packaging a thin film, and etching to remove the bridge array on the back surface to obtain a clean display device. According to the process, through back sensing and active feedback control, the pressure fluctuation is controlled within the target value + / -5%, the yield is improved by 20% or above, the physical precision limitation of equipment can be broken through without ultrahigh-precision hardware, and the flexible substrate manufacturing requirement is met.

To provide a quantum dot light emitting element having a light emitting layer containing quantum dots, exhibiting excellent element characteristics, low voltage drive, high luminous efficiency, and long drive life.SOLUTION: A composition for forming the light-emitting layer of a quantum dot light-emitting element, comprising quantum dots, a compound represented by the following formula (1), and an organic solvent. (Ar21 and Ar22 are aromatic hydrocarbon groups having 6 to 30 carbons which may have substituents, aromatic heterocyclic groups having 3 to 30 carbons which may have substituents, or monovalent groups having 2 to 7 of these linked together.)SELECTED DRAWING: Figure 1

According to a method for manufacturing a multi-color quantum dot display element, of exemplary embodiments of the present invention, a quantum dot light-emitting layer is formed on a first substrate. A double layer is formed by stacking an electron transport layer on the quantum dot light-emitting layer. The double layer is picked up using a stamp having a surface portion with a Young's modulus higher than that of a center portion. The double layer picked up by the stamp is transferred onto a second substrate. The quantum dot light-emitting layer includes at least two from among a green quantum dot, a red quantum dot and a blue quantum dot.