70 results about "Quantum dot display" patented technology

The invention discloses a preparation method of a perovskite quantum dot based on a green solvent and application of the perovskite quantum dot in a white light LED device, and belongs to the field of quantum dot display. Green macro preparation of efficient and stable perovskite quantum dots is realized by introducing the green solvent in synthesis, optimizing the synthesis method and adopting a room-temperature one-step method; the production cost can be greatly reduced, the production efficiency can be improved, the environment and human health can be protected, and the concept of sustainable development is met. The powder material obtained after drying treatment can be used for manufacturing a white LED with high luminous efficiency, and reliable technical support is provided for commercial application of photoelectric devices.

The invention relates to the technical field of quantum dot material performance detection, in particular to a transient photoelectric detection method for the aging degree of a quantum dot display screen material. Comprising the following steps: repeating multiple groups of excitation tests, calibrating core photoelectric parameters of an unaged standard sample and constructing a dynamic threshold library, and performing synchronous photoelectric signal acquisition and real-time compensation correction on a to-be-detected sample in a controlled environment; the collected transient signals are corrected, and three core parameters of fluorescence decay lifetime, transient current peak and carrier mobility are extracted; dynamically adjusting the threshold weight according to the quantum dot type and the use environment, comparing the extraction parameter with the dynamic threshold, judging the non-aging grade and the aging grade according to the comparison result, and generating a judgment report; through the mode, the signal acquisition quality is improved, and the actual requirements of high precision, high efficiency and nondestructive testing are met.

The invention belongs to the technical field of quantum dot display and polymer composite materials, and particularly discloses a PVDC-based composite material, a preparation method and a quantum dot diffusion plate comprising the PVDC-based composite material. Polyvinylidene chloride (PVDC) resin, general purpose polystyrene (PS), polycarbonate (PC), CdSe quantum dots, styrene-maleic anhydride copolymer SMA, methyl methacrylate-glycidyl methacrylate copolymer PMMA-co-GMA, an antioxidant and a nano diffusant are used as raw materials, and the composite material is prepared through a multi-layer co-extrusion technology. According to the invention, a symmetric barrier layer is formed by PVDC resin, water and oxygen erosion is effectively isolated, strong interface bonding is formed by utilizing the interaction of anhydride groups of SMA and chlorine atoms of PVDC and the reaction of epoxy groups of PMMA-co-GMA and PC end groups, and efficient light conversion and uniform diffusion are realized through the synergistic optical effect of quantum dots and a diffusant.

To provide a quantum dot light emitting element having a light emitting layer containing quantum dots, exhibiting excellent element characteristics, low voltage drive, high luminous efficiency, and long drive life.SOLUTION: The composition for forming the light-emitting layer of a quantum dot light-emitting element includes quantum dots, a compound represented by the following formula (1), and an organic solvent. The quantum dot light emitting element has an anode 2, a cathode 7, and a light emitting layer 5, and the light emitting layer includes quantum dots and a compound represented by the following formula (1).SELECTED DRAWING: Figure 1

The present invention relates to a formulation for preparing an optical layer containing a metal oxide or mixture of metal oxides. The formulation may exhibit at least one of properties as an advanced material or as a high-performance material. The formulation may be used in the nanotechnology process to make semiconductor device / display device application, for example a Liquid crystal display (LCD), Light emitting diode display (LED display), organic light emitting display (OLED), micro-LED display, quantum dot display (QLED), AR display, VR display, MR display, plasma (PDP) display, electroluminescent (ELD) display fabricated on a substrate controlled by semiconductors.

The colored photosensitive resin composition of the present invention maintains excellent resolution, visibility, and the like while it has excellent reflectance RSCI measured by the SCI (specular component included) method, reflectance RSCE measured by the SCE (specular component excluded) method, and the ratio between them (RSCE / RSCI), and has a uniform film thickness in an appropriate range. Thus, it can be formed into a multilayer cured film that simultaneously satisfies such physical properties as a high reflectance and a high light-shielding property. In addition, when a cured film is formed from the composition, it is possible to form a pattern on a multilayer film in a single development process. Thus, it can be advantageously used for a quantum dot display device.

The application provides a quantum dot display device, comprising a light-emitting assembly and a display panel located on the light-emitting side of the light-emitting assembly, wherein the light-emitting assembly comprises a reflecting cavity, an excitation light source assembly and a plurality of pixel units; the reflecting cavity has an entrance; the reflecting cavity comprises a total reflection surface; the excitation light source assembly is used for emitting excitation light and making the excitation light enter the total reflection surface from the entrance for total reflection; each pixel unit comprises a plurality of sub-pixel filling cavities; the sub-pixel filling cavities are arranged in the reflecting cavity; the sub-pixel filling cavities are filled with quantum dots; and the quantum dots in different sub-pixel filling cavities in any pixel unit emit light of different colors after being excited by the excitation light. The application solves the problem of low color gamut caused by the limited light transmittance and brightness of the existing liquid crystal display.

A vehicle display system may include a light guide, a quantum dot film arranged adjacent with the light guide and configured to receive blue light from the light guide and convert the blue light to red and green light, at least one buffer film, and a blue color filter arranged between the quantum dot film and the at least one buffer film, the blue color filter configured to transmit blue light back to the quantum dot film to further convert the red and green light.

The present invention relates to an optical device (100) for a display device comprising: i) a substrate (110); ii) one or more of gratings (120) placed onto the substrate; and iii) one or more of recessed grooves (130) at least partly filled by a material (140). The optical device may be made by using an advanced material or by using a high-performance material. The optical device may be used to make display device application, for example, a Liquid crystal display (LCD), Light emitting diode display (LED display), organic light emitting display (OLED), micro-LED display, quantum dot display (QLED), Augmented Reality (AR) hardware, Virtual Reality (VR) hardware, Mixed Reality (MR) hardware, plasma (PDP) display and an electroluminescent (ELD) display.

The invention discloses a television display control method based on quantum dot display and a related device. The method comprises the steps that a smart television receives a television digital signal to be played sent by a signal source; the smart television performs video stream decoding processing on the television digital signal to be played to form video stream data to be played; extracting to-be-played video frame data in the to-be-played video stream data to obtain to-be-played video frame sequence data; performing image enhancement processing on each frame of video image data in the to-be-played video frame sequence data to form enhanced to-be-played video frame sequence data; and the smart television controls the enhanced to-be-played video frame sequence data to be displayed and output on the quantum dot display screen. In the embodiment of the invention, enhancement of each frame of video image data in the to-be-played video frame sequence data is realized, the sense of reality and visual impact of a display picture are improved, high resolution and definition of the display picture are ensured, and meanwhile, the best display effect and watching experience are provided.

The invention belongs to the technical field of quantum dot display, and particularly relates to a white light LED device based on zwitter-ion ligand passivated perovskite quantum dots and a preparation method thereof, zwitter-ion ligands are introduced in synthesis, the curing process of the perovskite quantum dots is effectively inhibited, and the size growth of the quantum dots is successfully controlled. The zwitterionic ligand can be more tightly combined with the surface of the perovskite quantum dot, surface defects are effectively passivated, the stability of the quantum dot is remarkably enhanced, the optical performance of the quantum dot is improved, and therefore efficient and stable light emitting is achieved. In addition, the synthesis method is optimized, and large-scale preparation of efficient and stable perovskite quantum dots is achieved through a room-temperature one-step method. The powder material obtained after drying treatment can be used for manufacturing a white LED with high luminous efficiency, and reliable technical support is provided for commercial application of photoelectric devices.

The application provides a quantum dot display panel and a display device. The quantum dot display panel comprises: a substrate substrate; a light-emitting chip arranged above the substrate substrate; a quantum dot unit arranged above the light-emitting chip; and a polaroid arranged around the light-emitting chip. The application changes the light path of the light emitted by the light-emitting chip by arranging the polaroid around the light-emitting chip, so that the originally diverging light is concentrated and emitted to the quantum dot unit along the vertical direction; the influence of other light-emitting chips around is reduced, and the crosstalk phenomenon is avoided.

The invention provides a quantum dot display module and a preparation method and application thereof.The quantum dot display module comprises a blocking light conversion layer, a first bonding layer and a second bonding layer are arranged on the two sides of the blocking light conversion layer respectively, a first protection layer is arranged on the side, away from the blocking light conversion layer, of the first bonding layer, and a second protection layer is arranged on the side, away from the blocking light conversion layer, of the second bonding layer; a second protective layer is arranged on one side, far away from the barrier light conversion layer, of the second bonding layer; and the barrier light conversion layer comprises quantum dots and a high-barrier organic polymer material. The quantum dots are embedded into the high-barrier organic polymer material in a melt extrusion mode, and the provided quantum dot display module has the advantages of being high in luminous efficiency, high in stability, good in compatibility with a polymer matrix, high in diaphragm transmittance and the like.

The invention relates to the technical field of quantum dot display, in particular to a photoetching patterning quantum dot and a preparation method of a quantum dot full-color overlay device. It can be understood that according to the technical scheme provided by the invention, the novel photosensitizer developed by the invention effectively solves the bottleneck problem of a traditional photoresist method in quantum dot patterning, and the efficiency and quality of photoetching and patterning quantum dots are improved; the quantum dots can be dispersed in a green solvent PGMEA through ligand exchange, and the requirements of environmental friendliness and future mass production are met; blue quantum dot pixel patterning is achieved, the method can be popularized to preparation of a full-color quantum dot overlay device, the method has important significance in the technical field of quantum dot display, and further development and industrial application of the quantum dot display technology are promoted.

The application discloses a synthesis method of quantum dot photoresist, which adopts long-chain ligands of oleic acid and oleylamine, takes a polar solvent as a reaction solvent, adds lead halide and a cesium source as precursor substances, generates high-quality perovskite quantum dots in one step, then removes surface ligands of the perovskite quantum dots through reagents to form surface defects, makes the perovskite quantum dots have electronegativity, and then adds halide ligands capped with ammonium to combine with defects on the surface of the quantum dots to prepare the photoresist. The application not only improves the stability of the quantum dot photoresist, but also enhances the force between the quantum dots and the photosensitive ligands, thereby realizing controllable preparation of a high-precision quantum dot display array device, facilitating mass production, solving the complex process of multi-color conversion of a small display screen, and having a simpler process, higher stability, higher color purity and larger display color gamut compared with other existing products, and being helpful to promote Mini LED / Micro LED colorization application.

The present invention relates to a composition, preferably being a coating composition for forming an optical layer, comprising one or more of nanoparticles; and a silsesquioxane polymer. The composition of the present invention be used to make display device application, for example, a Liquid crystal display (LCD), Light emitting diode display (LED display), organic light emitting display (OLED), micro-LED display, quantum dot display (QLED), Augmented Reality (AR) hardware, Mixed Reality (MR) hardware, plasma (PDP) display and an electroluminescent (ELD) display.

The invention discloses a quantum dot display panel processing method and device, equipment and a medium, and generally relates to the technical field of display panels. The display panel comprises a plurality of pixel units, wherein each pixel unit comprises a backlight layer and a transmission layer; obtaining the current radiation protection parameter of each pixel unit in the display panel and the current transmission efficiency of the pixel unit; if the current radiation protection parameter does not conform to the standard radiation protection parameter and / or the current transmission efficiency does not conform to the preset transmission efficiency, determining the current radiation protection parameter according to the type of the pixel unit, the current first backlight wavelength of the pixel unit and the current first backlight layer thickness of the pixel unit; determining a second backlight wavelength of the pixel unit and a second backlight layer thickness of the pixel unit; the radiation protection parameter of the pixel unit under the excitation of the second backlight wavelength meets the standard radiation protection parameter, and the transmission efficiency of the pixel unit under the thickness of the backlight layer meets the preset transmission efficiency; and generating processing information.

The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a substrate, a light-emitting functional layer and a color conversion structure layer, the light-emitting functional layer comprises a plurality of light-emitting units with the same light-emitting color; the color conversion structure layer is arranged on the side, away from the substrate, of the light-emitting functional layer and comprises a plurality of quantum dot units, each quantum dot unit comprises quantum dot particles, and the orthographic projection of each quantum dot unit on the substrate and the orthographic projection of the light-emitting unit on the substrate are at least partially overlapped; the curing temperature of raw materials of the color conversion structure layer is smaller than or equal to the preset temperature. According to the quantum dot display panel, the product performance and the manufacturability of the quantum dot display panel are improved.

According to a method for manufacturing a quantum dot display device, according to exemplary embodiments of the present invention, a quantum dot light-emitting layer is formed on a first substrate. A double layer is formed by laminating an electron transport layer on the upper surface of the quantum dot light-emitting layer. The double layer is picked up using a stamp having a surface portion with a higher Young's modulus than a center portion. The double layer picked up using the stamp is transferred onto a second substrate. After the step of transferring onto the second substrate, the surface roughness of the lower surface of the quantum dot light-emitting layer is 0.1 nm to 10 nm.

The present invention relates to a photoresist, a display panel, and a method for manufacturing a display panel. The photoresist is obtained by introducing metal spheres with high reflectivity into a transparent colloid, thereby endowing the transparent colloid with light reflection properties. Since the reflectivity of the metal spheres is much higher than that of commonly used reflective materials, such as scattering particles like titanium dioxide, the photoresist has strong light reflection ability and can reflect rather than absorb the light emitted by the quantum dot film layer, thus improving the light utilization efficiency and further enhancing the brightness of the quantum dot display panel.

The application discloses a preparation method of an ultra-smooth organic film layer. The film coating is carried out on the surface of inorganic film layers such as silicon oxide and aluminum oxide, and the process comprises three process procedures of organic matter flashing, organic matter flowing and organic film layer polymerization. The organic film layer prepared by the method has the following effects: on the one hand, the inorganic film layer is planarized, and the roughness is reduced from 20 nm to within 3 nm; and on the other hand, the organic layer can compensate for microscopic defects such as pinholes and micro-cracks, prolong the path of gas molecules, and can prepare a high-barrier thin film. The organic diaphragm prepared by the application is obtained by flashing through the winding method on the surface of the oxide film layer, the thin film product has the ultra-smooth characteristic, the roughness is less than 3 nm by using an atomic force microscope, and can be applied in the fields of quantum dot display, photovoltaic, photoelectric material packaging and barrier film.

Disclosed is a quantum dot device and a quantum dot display apparatus including the same, the quantum dot device including: an anode disposed on a substrate and including a reflective layer; a hole auxiliary layer disposed on the anode and including a hole injection layer, a hole transport layer, or a combination thereof; a quantum dot layer disposed on the hole auxiliary layer and including quantum dots; an electron auxiliary layer disposed on the quantum dot layer; and a cathode disposed on the electron auxiliary layer, the cathode being a light transmitting electrode capable of transmitting at least a portion of light emitted from the quantum dot layer, wherein the quantum dot layer is configured to emit light of a first wavelength spectrum, the first wavelength spectrum being one of a blue wavelength spectrum, a green wavelength spectrum, and a red wavelength spectrum, the hole auxiliary layer has a thickness that causes a resonance wavelength of the quantum dot device to fall within the first wavelength spectrum, a peak emission wavelength of the quantum dot layer and a peak emission wavelength of light that passes through the cathode collectively belong to the first wavelength spectrum, and a full width at half maximum of an emission spectrum of the light that passes through the cathode is narrower than a full width at half maximum of an emission spectrum of the quantum dot layer.

The invention belongs to the technical field of nano material preparation and micro-nano pattern processing, and particularly relates to a nanocrystal capable of being directly subjected to photoetching patterning as well as a preparation method and application of the nanocrystal, a surface ligand of the nanocrystal comprises molecules containing a conjugated double bond structure, and light-induced free radical crosslinking can be generated under ultraviolet irradiation; the preparation method of the nanocrystal comprises the following steps: adding the molecule containing the conjugated double bond structure as a ligand into a reaction system in the synthesis process of the nanocrystal, so that the nanocrystal forms a photoetching surface interface; the nanocrystal material can be directly patterned under the conditions of no photoresist and no photoinitiator; the nanocrystal is used for photoetching patterning and has the characteristics of high patterning resolution, good film forming uniformity and the like, the luminescence property of the nanocrystal after photoetching is kept good, the environmental stability and mechanical strength of patterns can be enhanced, and the nanocrystal has wide applicability and expandability and can be widely applied to the field of photolithography. And an efficient and simple preparation means is provided for future high-resolution quantum dot display.

A quantum dot composition, a method for patterning a quantum dot film layer, and a quantum dot display device. The quantum dot composition comprises a mixed quantum dot material and a photosensitizer. The quantum dot material comprises a quantum dot body and a first quantum dot ligand on the surface of the quantum dot body; and the photosensitizer is configured to react with the first quantum dot ligand under illumination to form a second quantum dot ligand, wherein the molecular weight of the second quantum dot ligand is greater than that of the first quantum dot ligand, and the second quantum dot ligand and the first quantum dot ligand have different polarities. Photoetching patterning is directly carried out by utilizing the characteristic of a surface chemical property change of the quantum dot body, so that damage to the photoelectric properties of quantum dots caused by the introduction of a photoresist is avoided; in addition, the subsequent development mode is flexible. By selecting solvents having different polarities for development, a quantum dot film layer having a positive pattern or negative pattern can be obtained.

The application discloses a kind of high water oxygen barrier quantum dot diffusion composite material and preparation method and application, belong to optical display technical field, including the water oxygen barrier layer and quantum dot layer of alternative lamination.Its preparation method includes the following steps: water oxygen barrier layer blending granules and quantum dot layer blending granules are respectively dried, using alternative multilayer co-extrusion equipment is co-extruded, obtains the high water oxygen barrier diffusion composite material.The application also discloses the application of the high water oxygen barrier diffusion composite material in quantum dot display.The application not only simplifies the complex structure of backlight module, also realizes light diffusion, substantially improves the light, heat stability and fluorescence lifetime of quantum dot, provides new method for large-scale application of quantum dot display.The preparation method provided by the application is extrusion molding method, production process is simple, production efficiency is high, preparation process is continuous, simple, green, efficient, product batch stability is high, with wide application prospect.

The invention discloses a light-emitting element, a preparation method of the light-emitting element and a quantum dot display panel. The light-emitting element comprises a light-emitting layer, a first hole transport layer and a second hole transport layer, and the first hole transport layer is arranged on one side of the light-emitting layer; the second hole transport layer is arranged between the first hole transport layer and the light-emitting layer, the second hole transport layer comprises a second hole transport material main body and a photosensitive group cross-linked with the second hole transport material main body, and the hole mobility of the first hole transport layer is greater than that of the second hole transport layer. The light-emitting element provided by the invention is good in light-emitting performance.

The present application discloses a light-emitting element, a fabrication method for a light-emitting element, and a quantum dot display panel. The light-emitting element includes a light-emitting layer, a first hole transport layer, and a second hole transport layer, where the first hole transport layer is disposed at a side of the light-emitting layer; and the second hole transport layer is disposed between the first hole transport layer and the light-emitting layer, the second hole transport layer including a second hole transport material host and a plurality of photosensitive groups that crosslink the second hole transport material host, with a hole mobility of the first hole transport layer being greater than that of the second hole transport layer. The light-emitting element according to the present application exhibits good light-emitting performance.

The application discloses a deuterated 1-aryl-substituted carbazole compound and a preparation method and application thereof, and belongs to the technical field of organic optoelectronics. The 1-substituted carbazole compound containing a deuterium atom designed by the application is isotopic deuterium on a benzene ring of hydrogen. The introduction of deuterium can improve the charge transport performance of the compound and improve the thermal stability of the compound. The molecules can be used for a hole transport layer of a red, green and blue electroluminescent device. An organic electroluminescent device produced by taking the material as the hole transport layer can reduce a driving voltage, improve luminous efficiency, has excellent color purity, has a longer device life, and has great application potential. The 1-substituted carbazole compound containing the deuterium atom designed by the application is expected to be applied to a new generation of organic electronic device products such as an organic light emitting display and a quantum dot display.

The invention discloses a quantum dot display unit and a preparation method thereof. A sapphire substrate is provided with a groove and is filled with a filtering material to form a filtering unit; and arranging a water-oxygen blocking layer on the surface of the substrate to cover the light filtering unit. The light filtering material is arranged in the groove, the thermal expansion matching performance of the light filtering material is optimized, meanwhile, the smoothness of the sapphire substrate is beneficial to relieving stress concentration of the water and oxygen blocking layer, the adhesion and deposition uniformity of the water and oxygen blocking layer and the substrate are improved, and therefore the defects of the water and oxygen blocking layer are overcome. The optimization measures jointly act to improve the stability and reliability of the quantum dot display unit, the problem that in the prior art, the service life of the quantum dot display unit is shortened due to film layer stripping, cracking and the like is hopefully solved, and development and application of the quantum dot display technology are promoted.

To provide a quantum dot light-emitting device which has a luminous layer containing quantum dots, exhibits excellent device characteristics, is driven at low voltage, and has high luminous efficiency and a long driven life.SOLUTION: A composition for forming a luminous layer of a quantum dot light-emitting device comprises quantum dots, a compound represented by formula (1) in the figure, and an organic solvent. (In formula (1), Ar31, Ar32 and Ar33 each independently represent an optionally substituted C6-30 aromatic hydrocarbon group, an optionally substituted C3-30 heteroaromatic group, or a monovalent group in which 2-7 structures selected from optionally substituted C6-30 aromatic hydrocarbon groups and optionally substituted C3-30 heteroaromatic groups are linked.)SELECTED DRAWING: Figure 1