The invention discloses a quantum dot display panel and manufacturing method thereof. The quantum dot display panel includes a substrate, a pixel electrode located in a substrate pixel electrode pattern region, a pixel bank layer in a peripheral region of the pixel electrode, a residual pixel bank layer on the pixel electrode, an electron transport layer, a quantum dot luminous layer, a hole transport layer, a hole injection layer and an anode layer in sequence from bottom to top. A residual bank film on the pixel electrode during pixel bank manufacture is used as an electron blocking layer, a QLED of an inverted structure is manufactured, due to an insulating characteristic of the bank film, charge injection of the pixel electrode to the QLED device is reduced, thereby achieving electron and hole injection balance in the QLED, improving device performance, at the same time, the problem of removing the residual bank film and the problem of easy color mixing caused by the process can also be avoided, the manufacturing cost is reduced, and the yield is improved.