95 results about "Nanohole" patented technology

A system for sequencing a polynucleotide strand including a device with a layer stack on a silicon wafer. The layer stack may include a first electrode and a second electrode separated by a dielectric insulating layer and a nanohole drilled through the layer stack so that the first and second electrodes are rotationally arranged around the nanohole. A polynucleotide strand with at least one nucleotide and at least one electroactive label may be pulled through the nanohole. The system may additionally include a controller that may apply an electrical signal to the first and second electrodes, measure a current (I) as a function of an applied potential (V) when an electroactive label is guided through the nanohole of the device, and adjust an electrical voltage to pull the polynucleotide strand through the nanohole at a predetermined speed.

The invention reduces the energy level of fast-ignation lasers required for whispering gallery mode magnetic inertial fusion to the millijoule level by applying dual-wavelength laser irradiation to the central plate of a cryogenic deuterium target, which is typically a cubic target. In the center of the cubic target located in a biased magnetic field, there is a nanometer hole for generating a new magnetic field. The target also contains lithium nanoparticles that enhance energy deposition and produce tritium through lithium-neutron reactions, further improving the overall efficiency of the fusion process.

A negative electrode active material which includes a silicon-based composite represented by SiOa (0≤a<1), and a carbon coating layer distributed on a surface of the silicon-based composite, and which has a bimodal pore structure including nanopores and mesopores. In a lithium secondary battery including the negative electrode active material, an oxygen content in the silicon-based composite can be controlled to improve initial efficiency and capacity characteristics, and a specific surface area can also be controlled, and thus a side reaction with electrolyte can be reduced.

The invention discloses a nanofluidic calculator and chip based on ion transmission, the nanofluidic calculator comprises a nanofluidic ion calculation module, the nanofluidic ion calculation module uses the behavior and process of ion transmission in a nanopore channel to complete calculation, and the nanofluidic ion calculation module is composed of a plurality of nanofluidic ion memristors. The device further comprises an input module, a control module, a nanofluidic ion calculation module and a display module. The input module is an array keyboard and is positioned below the front surface of the calculator; the control module is composed of a micro-control chip and a peripheral circuit of the micro-control chip and located in the calculator. The nanofluidic ion calculation module is positioned above the front surface of the calculator and consists of a plurality of nanofluidic ion memristors; the display module is a display screen, is used for displaying numbers and calculation results and is positioned in the middle of the calculator; and the control module is connected with the nanofluidic ion calculation module, and is used for controlling the input voltage of the nanofluidic ion calculation module and reading a calculation result.

The invention discloses an on-chip spectrum sensing structure, a pixel unit and a preparation method and application thereof. The on-chip spectrum sensing structure comprises a metal layer, a dielectric layer and a detector, nano-pore channels are formed in the metal layer and the dielectric layer, and the nano-pore channels extend into the dielectric layer from the surface of the metal layer; near-infrared light forms surface plasmon resonance at the interface of the metal layer and the dielectric layer in the nanopore channel, so that part of near-infrared light in a selected narrow wavelength range is transmitted to the detector, and a corresponding electric signal is formed. According to the on-chip spectrum sensing structure provided by the invention, near-infrared broadband calculation spectrum sensing with high spectral fidelity can be realized, radiation and ohmic loss are effectively inhibited by a nonlinear parameterized design framework, and high transmission efficiency is ensured; the multi-channel super-pixel system structure generated by the method realizes simultaneous point spectrum and snapshot hyperspectral imaging, and shows the potential of the compact platform for field deployment and chip spectrum sensing application.

The invention provides a COF material, a perovskite battery, a preparation method of the perovskite battery and an electric device. X ions in the COF material are positive ions containing imidazole. The COF material for the perovskite solar cell, provided by the invention, has very strong adsorption capacity on I2; besides, the COF nanopore contains a plurality of N-containing and O-containing electron-rich groups and also contains pi electron conjugated structures such as a benzene ring and imidazole, and imidazole ions also serve as hydrogen bond donors, so that dynamic active sites in the COF nanopore are increased, and adsorption of I2 is further promoted through the synergistic effect of hydrogen bonds and electron-rich sites; therefore, the COF material can weaken the chemical reaction between the metal electrode and the perovskite, thereby inhibiting the corrosion of the metal electrode in the perovskite solar cell. The COF material also contains a plurality of passivation groups such as an oxygen-containing functional group and a nitrogen-containing functional group, and the passivation groups can passivate Pb < 2 + > defects in the perovskite layer.

A system for sequencing a polynucleotide strand including a device with a layer stack on a silicon wafer. The layer stack may include a first electrode and a second electrode separated by a dielectric insulating layer and a nanohole drilled through the layer stack so that the first and second electrodes are rotationally arranged around the nanohole. A polynucleotide strand with at least one nucleotide and at least one electroactive label may be pulled through the nanohole. The system may additionally include a controller that may apply an electrical signal to the first and second electrodes, measure a current (I) as a function of an applied potential (V) when an electroactive label is guided through the nanohole of the device, and adjust an electrical voltage to pull the polynucleotide strand through the nanohole at a predetermined speed.

The invention belongs to the field of micro-nano structures, and relates to a double-layer gold nanopore structure supported by a nano needle tip as well as a preparation method and application of the double-layer gold nanopore structure. According to the preparation method, the double-layer gold nanopore structure supported by the nano needle tip is obtained through an electron beam thermal evaporation system, a polystyrene microsphere self-assembly technology and reactive ion etching (RIE), the preparation process is simple, the cost is low, the repeatability is good, the structural stability is good, and the tolerance is high. Compared with a single-layer gold nanopore structure, the single-layer gold nanopore structure not only has more modes, but also presents complex multi-mode response dependent on pumping wavelength.

The invention provides an electrolyzer system and a method of electrode manufacturing. The electrolyzer system may include a first vessel in communication with the electrolyzer stack, a power source, an electrode, a separator, a membrane, and a second vessel in communication with the electrolyzer stack. The electrode may include a catalytic material and a microporous and / or nanopore structure. A method of electrode fabrication may include providing a substrate, contacting the substrate with an acidic solution, applying an electrical current to the substrate while depositing a primary material and a support material comprising a sacrificial material onto the substrate, and leaching the sacrificial material.

The invention provides a micro-glass nanopore manufacturing method which comprises the following steps: drawing a glass capillary into a micro-glass test tube with one closed end through a laser micro-tube drawing instrument for setting drawing parameters; acquiring image data of the closed end of the micro-glass test tube; analyzing and processing the image data of the closed end of the micro-glass test tube, judging whether the closed end of the current micro-glass test tube is matched with target drawing data or not, if so, stopping the drawing process of the micro-glass test tube, otherwise, adjusting drawing parameters, and drawing the micro-glass test tube again; placing the needle-shaped micro-electrode into the micro-glass test tube through the open end of the micro-glass test tube; a micro-glass test tube nano-pore preparation environment control chamber is constructed in advance, environment parameters of the micro-glass test tube nano-pore preparation environment control chamber are regulated and controlled, and a nano-pore is formed in the closed end of the micro-glass test tube through a dielectric breakdown method. The method provided by the invention is low in cost, and the formed nano aperture is controllable.

A plastic composite structure, a preparation method therefor and an application thereof. The plastic composite structure comprises: a first metal layer and a second metal layer which are stacked and connected to each other, wherein the first metal layer and the second metal layer are made of different materials; and a first oxide film layer and a first plastic layer which are sequentially stacked on the surface of the first metal layer that is not connected to the second metal layer, and / or a second oxide film layer and a second plastic layer which are sequentially stacked on the surface of the second metal layer that is not connected to the first metal layer. The first oxide film layer comprises a plurality of first nanopores, and the minimum distance between two adjacent first nanopores is less than or equal to 50 nm; and / or the second oxide film layer comprises a plurality of second nanopores, and the minimum distance between two adjacent second nanopores is less than or equal to 50 nm.

The utility model discloses a fluid pool for clamping a solid nanopore chip, belongs to the technical field of fluid pools, and aims to solve the problems that an existing device is complex in design and high in cost, the chip is easily damaged due to misoperation, the rapid liquid injection efficiency is low, a product is damaged due to repeated disassembly, and the service life and the detection effect are influenced. The sample adding device comprises an integrated sample adding pool, sample adding holes are symmetrically formed right above the two sides of the integrated sample adding pool, a push-pull type clamping groove is formed in the middle of the interior of the integrated sample adding pool, a groove is formed in the middle of the clamping groove, the nanopore chip is placed in the groove, a solution flows through a solution hole in the middle, and the nanopore chip is placed in the solution hole in the middle of the integrated sample adding pool. The left side and the right side of the integrated sample adding pool are respectively provided with a silver wire electrode interface located right above the integrated sample adding pool, and the silver wire electrode interfaces are located at the inner sides of the sample adding holes.

The application relates to a semiconductor gas sensor based on a double-through porous substrate, which at least comprises: a first electrode used for conducting electrical changes in a sensing reaction in a powered state; a second electrode used for forming a current path with the first electrode; a sensing layer composed of a double-through porous substrate with a gas-sensitive material for detecting gas deposited on the surface, and the double-through porous substrate is formed by a plurality of nanotube arrays. The first electrode and the second electrode are staggered on both sides of the sensing layer in a third direction in a non-overlapping manner, so that at least one tube opening of the nanotube on the sensing layer can be connected with the outside. The sensing electrode is improved, the phenomenon that part of the nanotubes cannot detect gas due to the nanotubes being covered when the sensing electrode is arranged is avoided, and the detection efficiency of the semiconductor gas sensor is improved.

The invention discloses a nanopore current detection system, and relates to the technical field of integrated circuits and biosensing, and the system comprises an analog front-end module which comprises a low-noise integrator and a continuous direct current feedback loop, the input end of the low-noise integrator is connected with a nanopore sensor, and the output end of the low-noise integrator is connected with an output end of the nanopore sensor; the continuous direct-current feedback loop is bridged between the output end and the input end of the low-noise integrator; the input end of the analog-to-digital converter is connected to the output end of the low-noise integrator; and the input end of the digital signal processing module is connected to the output end of the analog-to-digital converter, and the digital signal processing module is configured to execute differential operation on the digitized signal so as to restore the original current waveform of the nanopore sensor. The inherent defects that a traditional analog integral-differentiating circuit is large in noise, poor in stability and easy to saturate under high-bandwidth work are effectively overcome, and therefore unification of high bandwidth, high sensitivity, high dynamic range and high system stability is achieved in nanopore current detection.

A nanopore cell includes a conductive layer. The nanopore cell further includes a titanium nitride (TiN) working electrode disposed above the conductive layer. The nanopore cell further includes insulating walls disposed above the TiN working electrode, wherein the insulating walls and the TiN working electrode form a well into which an electrolyte may be contained. In some embodiments, the TiN working electrode comprises a spongy and porous TiN working electrode that is deposited by a deposition technique with conditions tuned to deposit sparsely-spaced TiN columnar structures or columns of TiN crystals above the conductive layer.

The present disclosure provides a method for realizing nano-pore processing by twice photoetching and twice negative development, and relates to the field of photoetching technology, and comprises the following steps: forming, on a substrate, a to-be-etched film layer, a first photosensitive film layer, a medium layer and a second photosensitive film layer which are sequentially stacked, and the to-be-etched film layer is close to the substrate; performing once exposure on the second photosensitive film layer by using a nano-pore mask, and then performing once negative development to form a nano-pillar photoetching structure on the second photosensitive film layer; transferring the pattern of the nano-pillar photoetching structure to the medium layer to form a pillar pattern structure; performing twice exposure on the first photosensitive film layer by using the pillar pattern structure as a shielding pattern, and then performing twice negative development to form a nano-pore pattern structure on the first photosensitive film layer; and transferring the pattern of the nano-pore pattern structure to the to-be-etched film layer to obtain a nano-pore structure.

This invention discloses a defective graphene-reinforced battery composite electrode and its preparation method, comprising a current collector, a defective graphene conductive coating, and an electrode active material layer; the defective graphene conductive coating is disposed on both sides of the current collector; the electrode active material layer is coated on the defective graphene conductive coating on both sides or on one side; and / or the electrode active material layer is doped with defective graphene nanosheets, or the composite electrode is in the form of a self-supporting electrode, composed of multilayer stacked defective graphene conductive films, the films containing nanopores and defect sites. This invention fully utilizes the high chemical activity of graphene defect sites, enabling it to have the triple functions of conductive additive, bonding bridge, and active lithium storage medium, synergistically optimizing the electrode microstructure and interface performance.

The application provides a sequencing chip based on a solid-state nanopore array and a preparation method thereof. The chip comprises, from bottom to top, a silicon substrate, a first dielectric layer, a second dielectric layer and a plurality of electrodes, the materials of the first dielectric layer and the second dielectric layer are different; a plurality of independent sample cavities are formed in the silicon substrate and penetrate the silicon substrate; a plurality of nanopores are formed in the first dielectric layer and penetrate the first dielectric layer; a plurality of cavities are formed in the second dielectric layer and penetrate the second dielectric layer; the plurality of independent sample cavities, the plurality of nanopores, the plurality of cavities and the plurality of electrodes are arranged one by one in a one-to-one correspondence; the plurality of electrodes are arranged in a corresponding manner in the plurality of cavities and the surface of the second dielectric layer, and meanwhile, a part of each electrode exposed in a corresponding cavity forms a bridge-shaped structure. The chip is based on a mature silicon microfabrication process combined with the breakdown principle of dielectric materials, has small and controllable process fluctuation, low cost and simple process, is suitable for controllable large-scale parallel formation of a nanopore array, and is thus suitable for industrial mass production.

This invention discloses a GaN-based LED epitaxial structure and its fabrication method, relating to the field of LED device technology. The GaN-based LED epitaxial structure includes a substrate, and a mask layer, a U-GaN layer, an N-GaN layer, a multiple quantum well layer, an electron blocking layer, and a p-GaN layer sequentially stacked on the substrate. The mask layer contains a plurality of nanopores that penetrate the mask layer along its thickness direction. GaN nanopillars are disposed within the nanopores, with one end connected to the substrate and the other end extending to the outside of the mask layer, such that a portion of the GaN nanopillar structure protrudes from the surface of the mask layer. The U-GaN layer covers the surfaces of the mask layer and the GaN nanopillars. Using this invention, defect density can be effectively reduced, epitaxial layer quality improved, thereby slowing down the hydrolysis reaction of GaN and enhancing the hydrolysis resistance of the GaN-based LED epitaxial structure.

The invention discloses a femtosecond laser directional induction etching system and method based on nanopore anchoring. The system comprises a femtosecond laser, a beam expander L1, a half-wave plate L2, a polarization beam splitter L3, a first reflector L4, a second reflector L5, a long-wave-pass dichroscope L6, a non-polarization beam splitter L7, an infinity correction objective lens L8, a semi-reflecting and semi-transmitting mirror L9, a convex lens L10, a third reflector L11, a sleeve lens L12, a power meter and a CCD camera. And in the multi-pulse irradiation process, by means of the local field enhancement effect, a subsequent structure is induced to be etched in the direction perpendicular to laser polarization with the nanopore as the starting point, and controllable machining of the nanostructure with the line width as low as 15 nm on the surface of the dielectric material is achieved. According to the invention, the growth path of the groove structure is determined by the anchoring position of the nanopore and the polarization direction of the laser, so that the method has good processing control capability and system stability.

The present application relates to an unpolarized electrochemical structural color pixel. According to embodiments of the present application, the unpolarized structural color pixel can dynamically express vivid and diverse colors without depending on specific polarization (that is, under non-polarizer conditions) by integration of an electrochemical deposition-dissolution technique of a metal and a nanohole metasurface of a dielectric layer.

Disclosed herein are devices, systems, and methods that can improve the SNR of nanopore measurements by mitigating the effect of parasitic capacitance between the sense electrode and the counter electrode. In some embodiments, a feedback circuit is used to inject a charge into the sense electrode to at least partially cancel the parasitic capacitance between the sense electrode and the counter electrode. In some embodiments, bootstrapping of a signal from the amplifier output or from the sense electrode is used to inject a charge on the counter electrode to substantially cancel the parasitic capacitance.

The application provides a covalent organic framework self-supporting film for precision filtration of CMP ultra-pure cleaning solution and a preparation method thereof. The preparation method comprises the following steps: dissolving a first organic monomer, a second organic monomer and a sulfonamide additive in an organic solvent to obtain a coating solution; coating the coating solution on a substrate surface and performing programmed temperature treatment; evaporating most of the organic solvent at a temperature lower than the melting point of the additive to form a precursor film, and then performing a melting polymerization reaction at a temperature higher than the melting point of the additive to form a covalent organic framework film; and finally, peeling, washing and activating to obtain a covalent organic framework self-supporting film connected by imine bonds, olefin bonds or imide bonds. The method is green and universal, and is easy to scale up. The prepared film has a regular nanopore size and high purity, can be used for preparing a semiconductor CMP post-cleaning solution filtration device, can effectively intercept nanoscale pollutants, and can prevent wafer scratching, and has good application potential and commercial value in the field of semiconductor polishing.

Secondary battery comprising a cathode foil, an anode foil and a separating film, wherein, the cathode foil comprises a cathode collector and a cathode film layer arranged on the surface of at least one side of the cathode collector, wherein the density of the cathode film layer is 2.0 g / cm³ 3 up to 3.0 g / cm³ 3 amounts; wherein the anode foil comprises an anode collector and an anode film layer arranged on at least one surface of the anode collector, wherein the density of the anode film layer is 1.4 g / cm³ 3 up to 1.85 g / cm³ 3 amounts; wherein the separating film comprises a base film having a thickness of 4 µm to 12 µm, wherein the base film has nanopores having an average pore size of 10 nm to 300 nm.

The utility model relates to a kind of medicine concentration detection chip and medicine concentration detection assembly, comprising: chip body, detection area is equipped on chip body, and detection flow passage is equipped in detection area;The two ends of detection flow passage are communicated with liquid inlet flow passage and liquid outlet flow passage, and liquid inlet flow passage includes: liquid inlet, the first liquid inlet flow passage is communicated with liquid inlet, the other end of first liquid inlet flow passage is communicated with first buffer flow passage, the other end of first buffer flow passage is communicated with second buffer flow passage, and first buffer flow passage and second buffer flow passage are equipped with confluence cavity between, first buffer flow passage, confluence cavity and second buffer flow passage form the buffer area that cross section is v-shaped, and the other end of second buffer flow passage is communicated with detection flow passage by the third buffer flow passage of inclination arrangement.This utility model is respectively arranged buffer flow passage in the two ends of detection channel, avoid adding liquid flow rate too fast and cause liquid in detection area not to be able to contact with the nanometer hole channel array on PCB board fully and cause the liquid in each nanometer hole channel uneven and affect the problem of detection precision.

The present disclosure provides a plasmonic light-emitting diode device. The device includes a first conductivity-type semiconductor layer disposed of on a substrate, a multiple quantum well sheet positioned over the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer disposed on the multiple quantum well sheet. Additionally, a contact layer is positioned over the second conductivity-type semiconductor layer, wherein the contact layer establishes an ohmic contact. The nanoholes are formed within the first conductivity-type semiconductor layer, wherein a plasmonic metal is at least partially deposited within each nanohole to facilitate surface plasmon resonance.

The application belongs to the technical field of organic optoelectronic materials, and particularly relates to a conjugated fused macrocyclic material containing selenium atoms and a preparation method and application thereof. 30 alkoxy, C1-C 30 alkoxy-substituted phenyl or phenyl; R2 is C1-C 30 alkyl, C1-C 30 alkyl-substituted phenyl or phenyl. The raw material of the application has the advantages of simple structure, low cost, easy preparation, etc. In addition, the conjugated fused macrocyclic material has a unique electronic structure and nanopore structure, and is an excellent organic optoelectronic material. When the conjugated fused macrocyclic material is applied to a field effect transistor device, a hole mobility of more than 0.5 cm 2 V ‑1 s ‑1 can be obtained.

The invention belongs to the technical field of microelectronics, and particularly relates to an artificial synaptic device based on a vertical nanowire array and a preparation method and application of the artificial synaptic device. The synaptic device comprises a substrate, a bottom electrode layer, an insulating template, a vertex electrode layer and a nanowire array. And the bottom electrode layer, the insulating template and the top electrode layer form a sandwich structure. The insulating template internally comprises a large number of vertically through nanopores, and the nanowire array is filled in the nanopores and is formed by a chalcogenide semiconductor material or a topological insulator material with rich defect states; one end of the nanowire array is electrically contacted with the bottom electrode layer, and a barrier layer is arranged between the other end of the nanowire array and the top electrode layer. Reversible switching of the device between a volatile threshold switching mode and a non-volatile resistive random access memory mode can be realized by adjusting the magnitude and the direction of a scanning voltage and a limiting current applied between the top electrode and the bottom electrode; the device overcomes the defects of a traditional device in the aspects of functional flexibility and structural reliability.

The application discloses a simple pore drilling and reaming device and method for controllable aperture nanometer holes on a thin film chip, which comprises a liquid pool one, a liquid pool two, a liquid pool three, a direct current voltage module, a clamp, a standard nanometer hole chip and a to-be-processed thin film chip; the standard nanometer hole chip clamp plate is clamped between the liquid pool one and the liquid pool two, the to-be-processed thin film chip is arranged between the liquid pool two and the liquid pool three, the liquid pool one, the liquid pool two and the liquid pool three are fixed on the clamp through screws, and the direct current voltage module outputs a constant voltage; the application does not need to use a computer system and a digital source table to monitor current feedback control bias voltage, and controllable nanometer hole manufacturing can be realized by using the constant direct current voltage module; only by selecting a direct current voltage value and a standard nanometer hole chip, setting a manufacturing time, and then different aperture nanometer holes can be stably manufactured on the to-be-processed thin film chip, and an experimental personnel does not need to confirm nanometer hole size through current feedback, so that the experimental cost and difficulty of the control breakdown pore drilling method are reduced.

The invention discloses a preparation method of a ternary positive electrode material, the ternary positive electrode material and application, and relates to the technical field of lithium ion batteries. Through in-situ construction of a core-shell / gradient structure, surface side reactions are inhibited, high capacity characteristics are maintained, and energy density and cycling stability are both considered. Through nanopore channels are constructed in single crystal particles, particle cracking is inhibited, and the rate capability is improved; through plasma treatment, lithium ion de-intercalation active sites are increased, the wettability of an electrolyte is improved, interface contact is optimized, and the reaction kinetics performance is improved; boron / phosphorus-containing functional molecules are introduced to react with surface residual lithium, a stable CEI film containing components such as Li3PO4 and LiF is generated in situ, interface side reaction is inhibited, interface stability is improved, and metal impurities are not introduced. The energy density, the cycling stability and the rate capability of the material can be considered at the same time through the preparation processes of core-shell gradient structure construction, nanopore modification, surface defect regulation and control modification and surface coating modification.