The invention relates to the technical field of semiconductors, and discloses a deep
ultraviolet LED structure and a preparation method thereof, the deep
ultraviolet LED structure comprises an LED substrate, and the LED substrate comprises a substrate, a non-doped AlN buffer layer, a GaN / AlN
superlattice layer, an n-type AlGaN layer, an
active layer, a p-type AlGaN layer and a p-type GaN cover layer which are stacked in sequence; openings of the plurality of nanoholes are located in the surface of one side, back to the p-type AlGaN layer, of the p-type GaN cover layer, and the nanoholes penetrate through the p-type GaN cover layer, the p-type AlGaN layer and the
active layer; the isolating layer is positioned on the inner wall of the
nanopore; and the
metal nanoparticles are located on the surface of one side, back to the p-type AlGaN layer, of the p-type GaN cover layer and cover the surface of one side, back to the inner wall of the
nanopore, of the
isolation layer. According to the deep
ultraviolet LED structure, the LSPR effect between the
metal nanoparticles and the
active layer can be enhanced, the light output intensity and effect are improved, and the forward light output intensity and effect of the deep ultraviolet LED structure are improved.