148 results about "Thin body" patented technology

An electronic apparatus 20 is of a portable type and has a thin body integral with a display screen holdable by both hands HR, HL of a user for viewing purposes. Disposed on a front of the body 21 are a flat display panel 22 and various operation buttons 23–27, and first and second touch sensors 28 and 29. The first touch sensor 28 is disposed on the apparatus at a position where when the body 21 is held by both the hands of the user, a touch surface of the first sensor 28 is easily operated vertically by a finger of the user's right-hand HR whereas the second touch sensor 29 is disposed at a position where when the body 21 is held by both the hands of the user, its touch surface is easily operated horizontally by a finger of the user's left-hand HL.

The present invention is a semiconductor device comprising a semiconducting low doped vertical super-thin body (VSTB) formed on Dielectric Body Wall (such as STI-wall as isolating substrate) having the body connection to bulk semiconductor wafer on the bottom side, isolation on the top side, and the channel, gate dielectric, and gate electrode on opposite to STI side surface. The body is made self-aligned to STI hard mask edge allowing tight control of body thickness. Source and Drain are made by etching holes vertically in STI at STI side of the body and filling with high doped crystalline or poly-Si appropriately doped with any appropriate silicides/metal contacts or with Schottky barrier Source/Drain. Gate first or Gate last approaches can be implemented. Many devices can be fabricated in single active area with body isolation between the devices by iso-plugs combined with gate electrode isolation by iso-trenches. The body can be made as an isolated nano-plate or set nano-wire MOSFET's on the STI wall to form VSTB SOI devices.

A complementary metal-oxide semiconductor (CMOS) device includes an NMOS thin body channel including a silicon epitaxial layer. An NMOS insulating layer is formed on a surface of the NMOS thin body channel and surrounds the NMOS thin body channel. An NMOS metal gate is formed on the NMOS insulating layer. The CMOS device further includes a p-channel metal-oxide semiconductor (PMOS) transistor including a PMOS thin body channel including a silicon epitaxial layer. A PMOS insulating layer is formed on a surface of and surrounds the PMOS thin body channel. A PMOS metal gate is formed on the PMOS insulating layer. The NMOS insulating layer includes a silicon oxide layer and the PMOS insulating layer includes an electron-trapping layer, the NMOS insulating layer includes a hole trapping dielectric layer and the PMOS insulating layer includes a silicon oxide layer, or the NMOS insulating layer includes a hole-trapping dielectric layer and the PMOS insulating layer includes an electron-trapping dielectric layer.

The present invention relates to the use of an exothermic composition having, as essential components, a water absorptive polymer and/or tackifier, carbon component and/or metal chloride and features that the product is as a whole ink-like or cream-like in a method of manufacturing an exothermic device.

The present invention is a semiconductor device comprising a semiconducting low doped vertical super-thin body (VSTB) formed on Dielectric Body Wall (such as STI-wall as isolating substrate) having the body connection to bulk semiconductor wafer on the bottom side, isolation on the top side, and the channel, gate dielectric, and gate electrode on opposite to STI side surface. The body is made self-aligned to STI hard mask edge allowing tight control of body thickness. Source and Drain are made by etching holes vertically in STI at STI side of the body and filling with high doped crystalline or poly-Si appropriately doped with any appropriate silicides/metal contacts or with Schottky barrier Source/Drain. Gate first or Gate last approaches can be implemented. Many devices can be fabricated in single active area with body isolation between the devices by iso-plugs combined with gate electrode isolation by iso-trenches. The body can be made as an isolated nano-plate or set nano-wire MOSFET's on the STI wall to form VSTB SOI devices.

The invention discloses a folding mobile terminal. The folding mobile terminal comprises a body and a flexible screen component. The body comprises a first structural part, a second structural part and a bending part. The end surfaces of the first structural part and the second structural part are respectively provided with a first slide cavity and a second slide cavity. The first structural part and the second structural part are connected with each other through the bending part. According to the folding mobile terminal, connecting components consist of meshing components and two slide rods. The meshing components allow the body to fold through hierarchical gear meshing, so that the meshing components are thin, and the folding mobile terminal can be thinner accordingly. The bending area of the flexible screen component is contacted with a fixed part, so that the bending area of the flexible screen component is supported by a flat part, and the press flexibility of the bending area of the flexible screen component is improved. The folding mobile terminal has a thinner body and higher press flexibility.

An ultra-thin body transistor and a method for manufacturing an ultra-thin body transistor are disclosed. The ultra-thin body transistor comprises: a semiconductor substrate; a gate structure on the semiconductor substrate; and a source region and a drain region in the semiconductor substrate and on either side of the gate structure; in which the gate structure comprises a gate dielectric layer, a gate embedded in the gate dielectric layer, and a spacer on both sides of the gate; the ultra-thin body transistor further comprises: a body region and a buried insulated region located sequentially under the gate structure and in a well region; two ends of the body region and the buried insulated region are connected with the source region and the drain region respectively; and the body region is isolated from other regions in the well region by the buried insulated region under the body region. The ultra-thin body transistor has a thinner body region, which decreases the short channel effect. In the method for manufacturing an ultra-thin body transistor together with the replacement-gate process, the forming of the buried insulated region is self-aligned with the gate, which reduces the parasitic resistance under the spacer.

In semiconductor devices, and methods of formation thereof, both planar-type memory devices and vertically oriented thin body devices are formed on a common semiconductor layer. In a memory device, for example, it is desirable to have planar-type transistors in a peripheral region of the device, and vertically oriented thin body transistor devices in a cell region of the device. In this manner, the advantageous characteristics of each type of device can be applied to appropriate functions of the memory device.

A method for fabricating a thin-silicon-on-insulator transistor with borderless self-aligned contacts is disclosed. A gate stack is formed on a silicon layer that is above a buried oxide layer. The gate stack includes a gate oxide layer on the silicon layer and a gate electrode layer on the gate oxide layer. A hard mask on top of the gate stack is formed. An off-set spacer is formed surrounding the gate stack. A raised source/drain region is epitaxially formed adjacent to the off-set spacer. The raised source/drain region is grown slightly about a height of the gate stack including the hard mask. The raised source/drain region forms borderless self-aligned contact.

A removable insert adapted for use with a spiral or other ring-type binder includes a thin body member, a hooking element connected to, or integral with, the body member which defines a longitudinally extending recess configured to receive at least a first page retaining member, and a fastener connected to, or integral with, the body member configured to detachably secure the body member to a second page retaining member. The hooking element includes a journal bearing about which the first page retaining member may be rotated. The fastener includes a constricted channel adjacent to the edge of the insert and an enlarged portion disposed inwardly from the edge.

The invention provides an antenna system and a mobile terminal. A first metal frame of the antenna system is connected with a metal floor through connection bar positions; a first slot is formed between the first metal frame and the metal floor; one end of a second metal frame is connected with the metal floor; the second metal frame is extended parallel to the lateral side of the metal floor; a second slot is formed between the second metal frame and the metal floor; the end of the first metal frame faces the end of the second metal frame; a slot for providing coupling excitation is arrangedbetween the opposing ends of the first and second metal frames. A radio frequency signal source is electrically connected with the first metal frame or the second metal frame through a matching network so as to form a multi-frequency antenna. The antenna system herein can provide multi-frequency signal communication through one antenna, antenna layout area is saved, antenna design cost is reduced,and implementation of a light and thin body of the mobile terminal is benefited.

Flange assembly for supporting a structure that provides scavenging air supply to an internal combustion engine at the carburetor to the engine. The assembly includes a thin-body flange that is configured to be abuttingly installed upon an end surface of the carburetor. The carburetor has its combustion air intake or port exposed at an outer surface for intaking air for the combustion process. The thin construction of the flange enables advantageous positioning of the adaptive flange. The relative dimensioning of the thin-body flange also contributes to its low-impact as a modification to air inlet arrangement. A combustion air aperture is provided that extends through the thin-body flange. The combustion air aperture is located in the flange for alignment with the combustion air intake. By this alignment, fluid communication is established across the flange and into the carburetor when the flange is abuttingly installed upon the carburetor. A scavenging air aperture also extends through the thin-body flange and is spaced apart from the combustion air aperture. A valve assembly is operatively coupled to the thin-body flange and has a valve element positioned at the scavenging air aperture for opening and closing the scavenging air aperture.

A body composition measuring apparatus includes electrodes for a right hand to be contacted with the right hand of a subject and electrodes for a left hand to be contacted with the left hand of the subject in an apparatus body for measuring an impedance of the body of the subject. The apparatus body includes a right hand grip having electrodes for a right hand and extending like a rod, a left hand grip having electrodes for a left hand and extending like a rod, and a base to which right hand grip and left hand grip are attached. Right hand grip is attached to base in a freely rotatable manner, and the extending direction of right hand grip and the direction along which the rotation axis of right hand grip extends are arranged to be different from each other. Thus, a small-sized, thin body composition measuring apparatus capable of being carried along can be obtained.

A faucet structure includes a main body, a water collecting base, a water output head and a water control valve. The main body is tubular with thin body wall, having a receiving space that receives the water collecting base having two water inlet holes and one water outlet hole on lower portion thereof, and a water inlet channel and a water outlet channel extends from the water inlet hole and water outlet hole. A valve base is formed on sideway of the water inlet channel and the water outlet channel. The faucet includes the main body and the water collecting base respectively, so the complexity of the main body is reduced, and the manufacturing process is simplified. Also, the structure of the main body can be simplified to a thin-wall structure to reduce material and further reduce manufacturing costs.

A multi-purpose, heat-resistant mat that comprises a single, flexible, thin body of elastomer material, which is preferably silicone, to provide thermal insulation. The solid planar body of elastomer material of the mat further includes numerous indicia providing grooves that score the bottom surface of the elastomer material for indicia aligned visual reference to permit cutting the original mat to a smaller size for custom fitting a particular pan or bowl. The mat may be cut linearly along one or more grooves to reduce the mat to a shape and size desired by the user. The mat also acts to cushion heated dishes and breakable cookware on hard surfaces so as to prevent damage to or breakage of the dishes against the hard surface while protecting the countertop surface from burning, scorching, and other physical abrasions.

An improved shim construction incorporating a thin body exhibiting a profile generally matching a selected mounting ear of a lower assembleable receiver, the shim including an arcuate perimeter with an flat interconnected base surface. The body exhibits an aperture defined therein such that, upon placement between an inner facing surface of the ear and an intermediate positioned cylindrical shaped portion, a subsequent widthwise traversing installation of a pivot pin causes the shim body to be sandwiched between the receivers to occupys an excess tolerance, thereby reducing or eliminating instances of misaligning slop or play exhibited between the receivers. The shim may exhibit a thickness in a range of 0.001″ to 0.010″. A plurality of shims can be provided as a kit and which are applied in scalable fashion to compensate for varying excess tolerance established between the receivers.

A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film-and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO₂) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.

A permanent-magnet motor composed of an irony barrel, a magnet set, a magnet holder, and a rotor. The irony barrel includes a thin body. The magnet set includes a plurality of magnets. The magnet holder is received inside the irony holder and includes a plurality of retaining pieces located at an internal edge thereof for holding the magnet set. The rotor includes a rotor silicon steel sheet, a deflector, a rotary shaft, a front bearing, and a rear bearing, being inserted inside the magnet set. In light of this, the magnet set can not only maintain the same thickness as that of the conventional irony barrel but also reduce the thickness of the front and rear parts of the irony barrel, so that the production cost of the irony material can be effectively decreased. Besides, the magnet holder can definitely space and position the magnets to enhance the assembly efficiency.