Square silicon nanometer hole and preparation method thereof

A silicon nano and hole technology, applied in the field of nano materials, can solve the problems of high cost, complex process, long process cycle, etc., and achieve the effect of improving efficiency, low cost and wide application prospect.

Inactive Publication Date: 2011-08-17
ZHENGZHOU UNIV
View PDF5 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the dry etching process has a long cycle, complicated process and high cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Square silicon nanometer hole and preparation method thereof
  • Square silicon nanometer hole and preparation method thereof
  • Square silicon nanometer hole and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Shake the cut monocrystalline silicon wafer with acetone and alcohol for 10 minutes and 5 minutes respectively, then treat it with a mixed solution of sulfuric acid and hydrogen peroxide with a volume ratio of 4:1 at 80°C for 1 hour to remove heavy metal ions on the surface, and finally Treat with a mixed solution of hydrogen peroxide: ammonia water: water = 1:1:3 (volume ratio) at 80°C for 1 hour. A silver film with a thickness of about 10 nm was vacuum evaporated on the cleaned silicon wafer. Put the silver-coated silicon wafer into a tube-type high-temperature furnace, anneal with 95 sccm argon as the protective gas, the temperature is 300°C, and the holding time is 60 minutes. Immerse the annealed silicon wafer with silver particles in the corrosion solution of hydrofluoric acid and hydrogen peroxide, wherein the concentration of hydrofluoric acid is 2.3-3.2 mol / L, the concentration of hydrogen peroxide is 0.2-0.38 mol / L, and the reaction temperature is 55°C , the ...

Embodiment 2

[0033] Shake the cut monocrystalline silicon wafer with acetone and alcohol for 10 minutes and 5 minutes respectively, then treat it with a mixed solution of sulfuric acid and hydrogen peroxide with a volume ratio of 4:1 at 80°C for 1 hour to remove heavy metal ions on the surface, and finally Treat with a mixed solution of hydrogen peroxide: ammonia water: water = 1:1:3 (volume ratio) at 80°C for 1 hour. A silver film with a thickness of about 8 nm was vacuum evaporated on the cleaned silicon wafer. Put the silver-coated silicon wafer into a tube-type high-temperature furnace, anneal with 95 sccm argon as the protective gas, the temperature is 300°C, and the holding time is 90 minutes. Immerse the annealed silicon wafer with silver particles in the corrosion solution of hydrofluoric acid and hydrogen peroxide, wherein the concentration of hydrofluoric acid is 3.2-4.0 mol / L, the concentration of hydrogen peroxide is 0.38-0.4 mol / L, and the reaction temperature is 65°C , the c...

Embodiment 3

[0035]Shake the cut monocrystalline silicon wafer with acetone and alcohol for 10 minutes and 5 minutes respectively, then treat it with a mixed solution of sulfuric acid and hydrogen peroxide with a volume ratio of 4:1 at 80°C for 1 hour to remove heavy metal ions on the surface, and finally Treat with a mixed solution of hydrogen peroxide: ammonia water: water = 1:1:3 (volume ratio) at 80°C for 1 hour. A silver film with a thickness of about 6 nm was vacuum evaporated on the cleaned silicon wafer. Put the silver-coated silicon wafer into a tube-type high-temperature furnace, anneal with 95 sccm argon as the protective gas, the temperature is 300°C, and the holding time is 90 minutes. Immerse the annealed silicon wafer with silver particles in the corrosion solution of hydrofluoric acid and hydrogen peroxide, wherein the concentration of hydrofluoric acid is 3.2-3.6 mol / L, the concentration of hydrogen peroxide is 0.3-0.38 mol / L, and the reaction temperature is 55°C , the co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
depthaaaaaaaaaa
depthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a square silicon nanometer hole, wherein a square silicon nanometer hole structure is prepared by adopting a method combining metal catalysis corrosion with a silicon wet etching technology. The preparation method comprises the following steps of: (1) depositing a metal film of 5-200 nanometers on the surface of a silicon slice; (2) carrying out heat treatment on the silicon slice with the deposited silicon slice to obtain metal nanoparticles with specific shapes; and (3) corroding the annealed silicon slice to form the square silicon nanometer hole. The invention does not need a mask technology and has the advantages of wet corrosion, such as low cost, easiness and convenience for operation and short using time and the advantages of dry corrosion, such as good corrosion uniformity and repeatability; and addition, the square silicon nanometer hole structure has wide application prospect on solar cells, integrated circuits, and the like.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a square silicon nanohole and a preparation method thereof. Background technique [0002] As an important semiconductor material, silicon is widely used in industries such as microelectronic systems and solar cells. Therefore, research on the processing technology of silicon materials has attracted much attention. One typical process is a series of photolithography and etching processes. According to the different etchant used, it can be divided into dry etching and wet etching, and can also be divided into anisotropic etching and isotropic etching according to the different etching rates of crystal planes. Wet etching is etching by chemical reaction. Generally, the silicon wafer is placed in an etching liquid with a certain chemical composition. The advantages of wet etching are simple operation, low cost, high output and high reliability, and excelle...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352B82Y40/00
CPCY02P70/50
Inventor 张迎九蔡永梅王晓霞汪素兰要峰
Owner ZHENGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap