2295 results about "Metal membrane" patented technology

A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.

To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.

A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.

The invention discloses a current collector, and an application of the current collector in a lithium ion battery, and concretely relates to a composite current collector, and a lithium ion secondary battery applying the current collector. The composite current collector comprises an upper metal layer, a lower metal layer and a nonmetal layer arranged between the upper metal layer and the lower metal layer, vacuum electroplating, electrolytic electroplating or composite bonding compounding is carried out between the upper metal layer and the nonmetal layer and between the nonmetal layer and the lower metal layer, and the thickness of the nonmetal layer is controlled to be 2-20 [mu]m; and the thickness of each of the upper metal layer and the lower metal layer is controlled to be 1-10 [mu]m. The above structure reduces the weight of the current collector and guarantees that the composite current collector have excellent tensile strength and excellent flexibility; the outer layer of the current collector is the metal layer, and has a conductive effect; and the above reasonable structure design substantially improves the mass energy density of the produced lithium ion secondary battery and effectively prolongs the cycle life of the battery.

A flow imaging system is used to implement surface plasmon resonance (SPR) detection to study bio-molecular interactions. The flow imaging system is used to capture SPR absorption spectra of large numbers of objects, where each object includes both a metal film capable of exhibiting SPR, and detecting molecules. Analyte molecules are added to a solution of such objects, and the result is introduced into the flow imaging system which collects full SPR spectral data from individual objects. The objects can be nanoparticles or larger particles that support metal island films. The SPR spectral data can be used to determine specificity, kinetics, affinity, and concentration with respect to the interactions between the detecting molecules and the analyte molecules.

A solution for manufacturing a nitride-based heterostructure, semiconductor, device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-III nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-III metal film on the surface in a substantially nitrogen-free atmosphere. The group-III metal film is grown such that it covers substantially an entire area of the surface. Next, the group-III metal film is nitridated to form a group-III nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-III nitride film. The islands can be used to subsequent group-III nitride growth to form the group-III nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics.

Transparent conductive films for flat panel displays and methods for producing them are disclosed. In general, a method according to the present invention comprises: (1) providing a flexible plastic substrate; (2) depositing a multi-layered conductive metallic film on the flexible plastic substrate by a thin-film deposition technique to form a composite film, the multi-layered conductive metallic film comprising two layers of an alloy selected from the group consisting of indium cerium oxide (InCeO) and indium tin oxide (ITO) surrounding a layer of an alloy of silver, palladium, and copper (Ag/Pd/Cu); and (3) collecting the composite film in continuous rolls. Typically, the thin-film deposition technique is DC magnetron sputtering. Another aspect of the invention is a composite film produced by a method according to the present invention. Still another aspect of the invention is a composite film comprising a multilayered film as described above formed on a flexible plastic substrate, wherein the composite film has a combination of properties including: transmittance of at least 80% throughout the visible region; an electrical resistance of no greater than about 10 Omega/square; a root-mean-square roughness of no greater than about 2.5 nm; and an interlayer adhesion between the multi-layered metallic film and the remainder of the composite film that is sufficiently great to survive a 180° peel adhesion test.

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate and forming fins over the semiconductor substrate. Each fin is formed with sidewalls. The method further includes conformally depositing a metal film stack on the sidewalls of each fin. In the method, the metal film stack is annealed to form a metal silicide film over the sidewalls of each fin.

The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below −50° C.

To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.

The invention provides a method of forming a metallic pattern including: (a) forming, in a pattern form on a substrate, a polymer layer which contains a polymer that has a functional group that interacts with an electroless plating catalyst or a precursor thereof; (b) imparting the electroless plating catalyst or precursor thereof onto the polymer layer; and (c) forming a metallic film in the pattern form by subjecting the substrate having the polymer layer to electroless plating using an electroless plating solution, wherein the substrate is treated using a solution comprising a surface charge modifier or 1×10⁻¹⁰ to 1×10⁻⁴ mmol/l of a plating catalyst poison before or during the (c) forming of the metallic film. The invention further provides a metallic pattern obtained thereby. Furthermore, the invention provides a printed wiring board and a TFT wiring board, each of which uses the metallic pattern as a conductive layer.

A polymeric film or sheet comprising an acid copolymer composition comprising acid copolymer of an alpha olefin and about 1 to about 30 wt % of alpha,beta-ethylenically unsaturated carboxylic acid having 3 to 8 carbons, based on the total weight of the acid copolymer composition, wherein the acid copolymer has a Melt Index of about 75 to about 600 g/10 min. The acid copolymer composition preferably comprises an additive selected from the group consisting of silane coupling agent, organic peroxide, and combinations thereof. In addition, an article comprising an interlayer formed of the polymeric film or sheet and an additional layer selected from the group consisting of glass, other polymeric interlayer sheets, polymeric film layers, and metal films or sheets. Examples of articles include safety windows and solar cells.

The invention relates to an organic wastewater treatment film reactor utilizing solar energy photo-assisted electro-catalysis, which comprises a storage tank of water to be processed, a flow controllable constant flow pump, a photoelectric chemical reactor, a clear water storage tank and a solar battery component, wherein a photo anode and a cathode are correspondingly arranged in the reactor; the photo anode takes a porous metal membrane as a base body, and a TiO2 nano tube or a TiO2 mesoporous membrane is formed on the surface of a porous titanium membrane (net) by an electrochemical anisotropic etching technology; a porous channel film is used as the base body; a metal oxide coating electrode with high electrochemical catalytic activity and high electrical conductivity is prepared by a dipping film-forming method, simultaneously, by doping and modifying operations, the electrode material has photo catalytic activity and the reaction efficiency is improved. The reactor integrates electrochemistry, photocatalysis and film separation technologies; the three technologies are coupled to enhance a synergistic effect; the wastewater treatment efficiency can be improved; a solar component is adopted as a power supply; the clean solar energy is utilized to the maximal degree, and the organic wastewater treatment film reactor has social benefits of reducing environment load and economic benefits of reducing cost.

The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a film stack structure and a metal film filled, via the barrier metal film, in a connecting hole opened in an insulating film. The manufacturing method of a semiconductor device includes the steps of: forming a contact hole and exposing a nickel silicide layer from the bottom of the contact hole; forming a thermal reaction Ti film by a thermal reaction using a TiCl₄ gas, forming a plasma reaction Ti film by a plasma reaction using a TiCl₄ gas, carrying out plasma treatment with an H₂ gas to decrease the chlorine concentration of the plasma reaction Ti film and at the same time to reduce an oxide film on the surface of the nickel silicide layer; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film and at the same time reducing the oxide film on the surface of the nickel silicide layer by thermal nitridation treatment with an NH₃ gas and plasma treatment with an NH₃ gas.

A direct touch type metal diaphragm valve, wherein durability of the valve, that is to say, the ensured number of continuous open/close operations of the valve, is substantially increased under conditions that an appropriate flow rate coefficient Cv is maintained, and changes of the afore-mentioned Cv value over time are mitigated by means of restricting the deformation of the valve seat over time. The afore-mentioned metal diaphragm is formed in a round, reverse-dish shape by laminating a plural number of thin stainless steel plates and a thin Nickel.Cobalt alloy plate, and its center part is bulged upward, and the maximum valve stroke of the valve is regulated to be 55% to 70% of the distance of the maximum bulge height Δh of the afore-mentioned metal diaphragm.

Sensors for determining the ambient amount (e.g., concentration) of a chemical (e.g., molecular hydrogen in a gas or vapor) are disclosed. Preferred embodiments of these sensors comprise a dense thin metal (e.g., palladium or a palladium alloy) film disposed on a microcantilever beam that is suspended above a stationary baseplate. The dense thin metal film is configured to absorb, for example, hydrogen, thereby causing the film to expand which in turn causes the microcantilever beam to deform. The deformation can be measured, for example, as a change in capacitance between the microcantilever beam and the stationary baseplate. The measured change in capacitance is indicative of the ambient hydrogen concentration.