1073 results about "Metal membrane" patented technology

The invention relates to the technical field of isotope production, in particular to a welding-free target capsule for isotope production and a manufacturing method of the welding-free target capsule. The welding-free target capsule comprises a target material used for generating isotopes under bombardment of high-energy particles; the first metal film covers one side of the target material; the second metal film covers the other side of the target material; wherein the first metal film and the second metal film are made of materials with ductility; the edge of the first metal film and the edge of the second metal film are attached to each other on the peripheral side of the target material and are folded into an annular sealing structure. In the invention, the metal film with good ductility is used as a coating material of the target material, and the sealing structure is formed by folding the connecting part of the metal film, so that the target capsule can be ensured to efficiently dissipate heat in a water-cooling environment, the manufacturing mode of the sealing structure can be improved, the manufacturing steps of the sealing structure are simple and easy to implement, and the manufacturing cost of the target capsule is further reduced.

The invention discloses a multi-mode reconfigurable diamond solar-blind ultraviolet photoelectric transistor and a preparation method thereof, and aims to solve the problem of separation of sensing, storage and calculation frameworks of an existing artificial vision system. According to the diamond solar blind ultraviolet photoelectric transistor, a terminal is arranged on the surface of a diamond substrate, a first metal film layer is deposited on the upper surface of the diamond substrate to serve as a first contact electrode, the first contact electrode is Schottky contact, and a second contact electrode is a metal probe. The second contact electrode is in needle point contact with the upper surface of the diamond substrate, a second metal film layer is deposited on the lower surface of the diamond substrate to serve as a third contact electrode, and the third contact electrode is Schottky contact. According to the reconfigurable diamond solar blind ultraviolet photoelectric transistor, different functions of an avalanche detector, an optical memory, visual synapse and the like are integrated in one device, and large gain rising of the diamond detector and multi-mode intelligent sensing of a single device are achieved.

The invention discloses a metal diaphragm capacitor composite vacuum gauge, and relates to the technical field of vacuum gauges, the metal diaphragm capacitor composite vacuum gauge comprises a vacuum gauge body and a control module, the lower side of the vacuum gauge body is fixedly connected with a lower sealing block, the lower side of the lower sealing block is fixedly connected with a connecting pipe, and the connecting pipe is communicated with the interior of the vacuum gauge body. The upper side of the inner wall of the vacuum gauge body is fixedly connected with an electrode, the lower side of the electrode is provided with a capacitor diaphragm, the electrode is not in contact with the capacitor diaphragm, a buffer cavity is formed in the connecting pipe, a buffer mechanism is arranged in the buffer cavity, and a detection mechanism is arranged on the outer side of the connecting pipe. According to the invention, through the arrangement of the connecting pipe, the gas channel and the stop block, high-speed gas upwelling can be effectively blocked when gas flow recoil occurs, instantaneous impact on the capacitor diaphragm is relieved, reading deviation or device damage caused by diaphragm deformation quantity overrun is avoided, and the system has the characteristics of high practicability and improvement of the adaptability of the system to complex working conditions.

The invention relates to the technical field of superconducting quantum computing, and discloses a hole structure metallization deposition method and system, a sacrificial layer is deposited on the surface of a silicon substrate, a hole structure with a preset depth-to-width ratio is etched on a to-be-processed substrate, a substrate with the hole structure is obtained, a first metal material is used for surface deposition of the substrate with the hole structure, and a metallization deposition layer is formed on the surface of the substrate with the hole structure. The preparation method comprises the following steps: forming a hole structure on a substrate, forming a metal induction layer on the surfaces of the substrate and the hole structure to obtain a substrate with the metal induction layer, performing magnetron sputtering on the substrate with the metal induction layer by using a second metal material, and applying a magnetic field around the substrate with the metal induction layer to form a metal film on the surface of the metal induction layer, and obtaining the substrate with the hole structure subjected to metallization deposition. The metal coverage in the holes can be improved by using a metal induction mode, and the deposition uniformity of particles in the holes can be ensured by combining a magnetic field applying mode, so that a deep hole scene can be well dealt with.

The invention provides a finite element analysis method and system for geometric design of a flow regulating valve, and relates to the technical field of data processing.The method comprises the steps that 1, spatial geometric feature analysis is conducted on each data point in a discrete contour coordinate dataset, the principal curvature value of each data point on the sealing surface of a metal diaphragm is solved, and the principal curvature value of each data point is calculated; determining a point with the maximum average curvature value on the sealing surface of the metal diaphragm as a core morphology reference point; step 2, establishing a local coordinate system by taking the core morphology reference point as an original point, screening four sealing state points from the discrete contour coordinate data set, solving a corresponding space plane equation, and calculating a space intersection line between the space plane and the sealing surface of the metal diaphragm; according to the method, through accurate positioning of the core reference point, definition of the analysis sub-domain, grid division, mechanical solution, leakage rate calculation and parameter optimization, the dynamic particulate matter problem is effectively improved, and the sealing performance and the micro flow adjusting precision are improved.

The invention discloses a magnetron sputtering coating method with uniform coating and high target material utilization rate, and belongs to the technical field of film preparation, and the method realizes high-precision coating through whole-process collaborative optimization of pretreatment, sputtering, deposition and post-treatment. The substrate is cleaned in cooperation with radio-frequency pulse focusing bombardment; an electromagnetic coil group containing a temperature compensation coil is used for target sputtering, a magnetic field is dynamically adjusted in combination with laser profile sensing and a PID self-adaptive algorithm, and a direct current pulse-radio frequency composite power supply is matched to solve the target problem; in the deposition stage, a quartz crystal instrument is used for closed-loop film thickness control, metal film pulse gas supply and compound film reaction gas phase adjustment; gradient temperature rise is carried out according to data of an X-ray stress meter in post-treatment, and argon is used for dynamic protection and impurity prevention. According to the magnetron sputtering coating method with uniform coating and high target material utilization rate, the uniformity of coating and the target material utilization rate are improved, and the technological adaptability and stability of coating are improved.

The invention relates to the technical field of thermal insulation material preparation, and discloses an aerogel composite metal film thermal insulation material and a preparation method thereof, and the preparation method comprises the following steps: metal film surface treatment; performing fiber-metal film needling; through mold forming and porosity control, a fiber-metal film prefabricated part with a specific shape and a high-porosity structure is prepared; soaking and aging the sol, realizing efficient permeation and filling of the sol in the fiber-metal film prefabricated member through staged pressure control, and completing conversion from the sol to gel in a low-temperature aging stage, so that a uniform and stable nano-particle continuous phase is constructed in the fiber-metal film prefabricated member, and a gel-containing fiber-metal film prefabricated member is formed; the preparation method comprises the following steps: preparing a fiber-metal film preform, performing supercritical drying, thoroughly removing a solvent under the condition of not damaging a gel network structure by utilizing the characteristic that alcohol fluid has no gas-liquid interface surface tension in a supercritical state aiming at the fiber-metal film preform containing gel, and further preparing the aerogel composite metal film heat insulation material.

To suppress generation of residue when forming an open hole by performing metal assist chemical etching from both surfaces of a substrate.SOLUTION: A liquid discharge head manufacturing method includes: a first etching process in which a first metal film is formed on a first face which is one plate face of a semiconductor substrate, and a first hole is formed at a position of a first flow path by metal assist chemical etching using the first metal film; and a second etching process in which after the first etching process, a second metal film is formed on a second face which is a plate face opposite to the first face of the semiconductor substrate, and a second hole is formed at a position of a second flow path by metal assist chemical etching using the second metal film. A first region, in which the first metal film is provided, involves a second region in which the second metal film is provided when viewed in a thickness direction of the semiconductor substrate.SELECTED DRAWING: Figure 3

The invention discloses a preparation method of a flexible infrared super-surface absorber based on MDM, and belongs to the field of micro-nano machining patterning. The method comprises the following steps: pretreating a polymer material; depositing a layer of bottom metal film on the pretreated substrate by adopting magnetron sputtering; a metal reflecting layer, a dielectric insulating layer and a metal surface functional layer are sequentially deposited through magnetron sputtering, a periodic nano microstructure is constructed on the surface of a flexible composite film, a nano round pit array is etched in situ on a surface metal layer of an MDM structure by using a femtosecond laser selective etching process, and an MDM laminated structure is formed. According to the invention, stable integration of the MDM structure and the flexible substrate can be realized, and meanwhile, high absorptivity and good flexibility of the device in an infrared band are ensured. The absorber prepared by the invention can generate resonance absorption on incident infrared electromagnetic waves through a surface plasmon and F-P cavity resonance coupling mechanism, and meanwhile, the characteristic size variation is changed through physical excitation, so that effective absorption and frequency regulation of the electromagnetic waves at the infrared band of 3-14 microns are realized.

The invention belongs to the technical field of coated glass, and particularly provides a deposition method of a metal seed layer in TGV metallization and magnetron sputtering equipment. The invention aims to solve the problem of serious surface discharge phenomenon caused by low adhesive force between a metal film and a glass substrate, low metal coverage rate and step rate in a through hole and high accumulated charge on the surface of glass in the existing TGV metallization process. The independent and controllable ion source is introduced to assist deposition, the ion source is started at different stages of metal film deposition, and directional and high-energy positive ion flow generated by the ion source is utilized to bombard the surface of the glass substrate so as to assist the magnetron sputtering process, so that the surface of the glass substrate is subjected to magnetron sputtering. Through shallow ion implantation, enhancement of surface migration energy of deposited metal atoms and neutralization of negative charges accumulated on the glass surface, the adhesive force between metal and a glass substrate is improved, the metal coverage rate and the step rate in a through hole are improved, surface discharge is inhibited, and therefore the process stability is improved.

The invention belongs to the technical field of graphite metal composite heat dissipation devices, and provides a flexible graphene film heat conduction cable and a preparation method thereof.The preparation method comprises the steps that the surface of a graphene film is cleaned and punched, and the graphene film with micron-sized pores in the surface is obtained; sequentially plating a layer of active metal film and a layer of heat-conducting metal film on the surface of the graphene film, and cutting to obtain a graphene film; graphene films are overlaid layer by layer to obtain a laminated material, and the two ends of the laminated material are clamped to a hot-pressing mold to be subjected to hot-pressing welding treatment, so that a locally connected flexible heat conduction section is obtained; and the flexible heat conduction section and the heat conduction metal shell are assembled, a soldering lug is placed for brazing and finish machining, and the flexible graphene film heat conduction cable is obtained. According to the method, the internal connection problem of the flexible section is solved by establishing a synergistic process of surface punching, double-layer coating and hot pressing, the heterogeneous connection problem of the flexible section and the shell is solved in a manner of sampling coating and brazing, and through the synergistic effect of all links, the overall performance and reliability of the heat-conducting cable are remarkably improved.

The present application relates to the technical field of biological sensing, and discloses a composite functional porous metal membrane and detection system for monitoring and identifying airborne microorganisms, and a method for monitoring and identifying airborne microorganisms. The monitoring and identification method comprises: applying an electric field to the composite functional porous metal membrane, causing the membrane to freely switch charge and capture airborne microorganisms to be tested; adding a fluorescent probe to the composite functional porous metal membrane, which binds with the microorganisms to be tested to obtain a fluorescent sample, and collecting imaging of light emitted after irradiation of excitation light, to achieve preliminary determination and addressing of the microorganisms to be tested; performing Raman spectroscopy scanning on individual bacteria, and comparing with a standard Raman spectrum library to achieve species identification of the individual bacteria. Relying on the "composite functional porous metal membrane," an integrated process of "selective enrichment-total bacteria monitoring-species identification" is realized; the present invention takes selective enrichment of the microorganisms to be tested as an entry point, lays the foundation for preliminary judgment accuracy and species identification accuracy, and improves the efficiency and precision of monitoring and identifying airborne microorganisms.

To suppress occurrence of fogging in a high temperature and high humidity environment and roughness in a low temperature and low humidity environment, through an endurance use in a system in which a processing speed is fast.SOLUTION: A process cartridge has: developer; a developer carrier; and a developer layer thickness restriction member of which at least a part restricts a layer thickness of the developer to be carried on the developer carrier. The process cartridge is detachably attached to a main body of an electro-photographic image formation device, and the developer carrier has: a substrate; and a resin layer that exists on an outermost surface side of the substrate. A metal film is directly provided on an outer surface of the developer carrier, and measured impedance is equal to or more than 1.00*106 Ω, and let ionization potential of the developer be I(T), and ionization potential of the outer surface of the developer carrier be I(R), the I(T) and I(R) satisfy a specific relationship, and a maximum value of electric potential when measuring the outer surface of the developer carrier is less than 20.0 V.SELECTED DRAWING: Figure 1

The invention provides a method for improving the uniformity of the aperture of a TGV through hole, relates to the technical field of communication packaging, and provides a TGV glass substrate with the thickness of 500 microns. A laser reflecting layer pattern is manufactured on the substrate, the laser reflecting layer is a metal film layer, the pattern is in a circular ring shape, the inner diameter of the pattern ranges from 5 micrometers to 200 micrometers, and the outer diameter of the pattern is 10%-30% larger than the inner diameter of the pattern. According to the method, the annular laser reflecting layer pattern is firstly manufactured on the TGV glass substrate, the diameter of a laser induction light spot is between the inner diameter and the outer diameter of the laser reflecting layer pattern, and when laser induction is carried out on the TGV glass substrate, the light spot of a laser induction area coincides with the center position of the annular laser reflecting layer. Therefore, due to the limitation of the laser reflection pattern, the size of the laser induction area is consistent, and even if the spot size of the induction laser slightly fluctuates, the uniformity of the finally formed TGV through hole can be ensured.

The invention discloses a high-binding-force composite current collector, a preparation method and a lithium ion battery, the high-binding-force composite current collector comprises a polymer base film layer, adhesive layers and a metal layer, the adhesive layers are respectively arranged on two sides of the polymer base film layer, and the metal layer is arranged on the two sides of the polymer base film layer. The metal layers are respectively arranged on one side, far away from the macromolecular base film layer, of the adhesive layer; wherein the adhesive layer is prepared by preparing a coating on the surface of the macromolecular base film layer by using an adhesive through a spraying or coating technology and curing the coating; the metal layer comprises a first metal film and a second metal film. According to the high-binding-force composite current collector disclosed by the embodiment of the invention, the additive is bonded with the metal layer on the basis of the emulsion and the filler additive in the adhesive, so that the binding force between the macromolecular base film layer and the metal layer is improved, the phenomenon that the metal layer falls off is effectively avoided, and meanwhile, the energy density and the safety performance of the composite current collector are further improved; and the yield of products is increased.

An optical component including: a substrate on which an optical element is mounted; a transparent sealing member disposed above the substrate and configured to seal the optical element; and a bonded portion in which a plurality of metal films are laminated, and which is configured to bond the transparent sealing member and the substrate. The bonded portion includes: one or more stress relaxation layers constituted by one or more metal films having a Young's modulus of less than or equal to 150 GPa, the one or more stress relaxation layers having a total thickness of greater than or equal to 1.2 μm; and a diffusion prevention layer disposed on each of both sides in a thickness direction of each of the one or more stress relaxation layers, and configured to prevent diffusion of metal constituting the stress relaxation layer.

A heat dissipation member according to the present invention includes: a copper-diamond composite body in which a plurality of diamond particles are dispersed in a metal matrix containing copper; and a metal film that is bonded to at least one surface of the copper-diamond composite body, in which in at least one cross section of the heat dissipation member in a stacking direction, the copper-diamond composite body has a coarse particle layer containing the diamond particles that are coarse particles having a large particle diameter, and a fine particle layer containing the diamond particles that are fine particles having a smaller particle diameter than the coarse particles, and has a structure in which the fine particle layer is disposed closer to a bonding surface side between the copper-diamond composite body and the metal film than the coarse particle layer.

The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a wafer wet etching method and a wafer produced thereby. The wafer comprises a substrate and a composite metal layer; the composite metal layer covers a preset surface of the substrate; the composite metal layer comprises a first metal layer and a second metal layer; and the first metal layer covers the surface of the second metal layer. By means of the wet etching process provided by the present invention, different masks are provided for different metal layers and the widths of transparent areas of the masks are controlled, so that the problem of dimensional distortion of a bottom metal layer when a conventional process is used for wet etching of a composite metal film is effectively solved, thereby improving the dimensional precision of the bottom layer during wet etching of the composite metal film, and also improving the yield rate and reliability of wafer production.

The invention discloses a method for efficiently extracting and recovering valuable elements from tailings. The method comprises the steps of gradient crushing-morphology separation, rotational flow reselection-flotation coupling, enhanced alkaline leaching, biological oxidation-acid leaching collaboration, membrane electrolysis enrichment, extraction resin deep recovery and tail water zero discharge treatment. According to the method, metal is pre-enriched through gradient crushing-morphology separation; after rotational flow classification, minerals of different size fractions are recycled through gravity separation and flotation; metal with different chemical forms is dissolved through three-stage synergism of alkaline leaching, biological oxidation and acid leaching; selective deposition of valuable metal in the solution is realized through membrane electrolysis; adsorbing and recovering rare earth by using extraction resin; and tail water closed-loop treatment. According to the method, the aim of multi-element collaborative recovery is achieved, meanwhile, the recovery rate of coarse-grain gold is increased, meanwhile, high-temperature roasting is replaced with biological oxidation, energy consumption is reduced, full recycling of waste water can be achieved, and the method is quite suitable for efficient recovery of valuable elements in metal mine tailings.

The invention relates to the technical field of etching solutions, and discloses a molybdenum-aluminum-niobium etching solution for a TFT-LCD (Thin Film Transistor Liquid Crystal Display), which comprises the following components in percentage by mass: 50 to 60 percent of phosphoric acid, 3 to 8 percent of nitric acid, 5 to 10 percent of glacial acetic acid, 1 to 5 percent of aluminum nitrate, 0.1 to 0.5 percent of diphenyl thiourea, 1 to 5 percent of etidronic acid, 3.0 to 5.0 percent of sodium hexametaphosphate, 0.1 to 0.2 percent of fatty alcohol-polyoxyethylene ether, 0.5 to 0.8 percent of amino trimethylene phosphonic acid and the balance of ultrapure water. The invention further discloses a preparation method of the molybdenum-aluminum-niobium etching solution. According to the invention, a phosphorus nitrate vinegar system, a composite additive, a novel corrosion inhibitor, a metal ion chelating agent and a surfactant matched with the etching liquid are adopted, so that the molybdenum-aluminum-niobium multi-layer composite metal film can be simultaneously etched at one time; the etching solution has the advantages of being uniform in etching, capable of inhibiting Mo / Nb etching, high in selectivity, controllable in etching rate, free of residues, long in service life, high in stability and the like.

The invention provides an etching solution compatible with Cu / Mo and Cu / MTD and application of the etching solution. The etching solution comprises a main agent and an auxiliary agent, the main agent comprises the following components in parts by weight: 5-22 parts of an oxidizing agent, 1-15 parts of organic acid, 0.01-5 parts of inorganic acid, 0.5-15 parts of organic alkali, 0.01-5 parts of a stabilizer, 0.01-1 part of a metal inhibitor and 1-100 parts of water. The etching solution provided by the invention can be effectively compatible with two different metal structures, namely Cu / Mo and Cu / MTD, and can realize a good etching effect on different metal film layers in the etching process, so that the problem of poor etching caused by poor compatibility of the etching solution is reduced, and the yield of products is improved; the etching solution has excellent etching performance on Cu / Mo and Cu / MTD alloy double-layer films and the like, no residue is left after etching, substrate materials such as a glass substrate and the like cannot be damaged, and the high requirement of the modern electronic manufacturing process on the etching solution is met.

An electronic device according to the present disclosure includes a semiconductor substrate, a chip, and a bump. The chip has a thermal expansion coefficient different from that of the semiconductor substrate. The bump connects the connection pads provided on the opposing principal surfaces of the semiconductor substrate and the chip. The bump has a porous metal layer and a metal film. The metal film is provided on at least one of a portion between the connection pad provided on the semiconductor substrate and the porous metal layer and a portion between the connection pad provided on the chip and the porous metal layer, and on the side surfaces of the porous metal layer.

The present invention relates to a film system structure, comprising a substrate (1) and a film group (2) plated on the substrate (1), wherein the film group (2) comprises a high-refractive-index film layer (21), a low-refractive-index film layer (22), and a metal film layer (23). The metal film layer of the present invention can ensure the reflectivity and reliability of the film system structure composed of the metal film layer.

A filter includes a first filter circuit and an additional circuit. The first filter circuit includes a resonator electrode and a main wire. The main wire includes first and second metal films, the second metal film being in contact with the first metal film. The additional circuit includes an IDT electrode group including IDT electrodes and a sub-wire connecting the IDT electrode group to the first filter circuit. At least a portion of the sub-wire includes a third metal film connected to the IDT electrode group. The third metal film is covered with a fourth metal film with an insulating layer interposed therebetween, the insulating layer being provided on the third metal film. The fourth metal film is connected to a ground terminal on a substrate.

The invention relates to manufacturing of a Micro OLED (Organic Light Emitting Diode), in particular to a preparation method of a Micro OLED anode structure for improving side luminous intensity, which comprises the following steps of: sequentially preparing a first SiO2 film layer and a SiN film layer on a substrate, and spin-coating a first photoresist layer on the surface of the SiN film layer; preparing a reflection bowl structure based on different etching rates of the first SiO2 film layer and the SiN film layer; preparing a metal film layer on the surface of the reflection bowl structure, spin-coating a second photoresist layer on the surface of the metal film layer, and only reserving the metal film layer in the reflection bowl; second SiO2 film layers with different thicknesses are prepared on the surfaces of the metal film layer in the reflection bowl and the SiN film layers on the two sides, ITO film layers are prepared on the surfaces of the second SiO2 film layers, and reflection bowl type Micro OLED anode structures with different gradients are obtained; according to the technical scheme provided by the invention, the defect of relatively low display brightness of an OLED (Organic Light Emitting Diode) product can be overcome.

The application discloses a preparation method of a multi-layer composite film system, a conductive thin film and a semiconductor device. The preparation method of the multi-layer composite film system comprises the following steps: preparing a first layer of metal film on a substrate by a vacuum coating method; performing surface roughening treatment on the first layer of metal film; and preparing a second layer of metal film on the first layer of metal film after the surface roughening treatment by the vacuum coating method. The preparation method of the multi-layer composite film system can enhance the adhesion between the film layers by performing the surface roughening treatment on the first layer of metal film, so that the mechanical combination mode is adopted between the film layers, the adhesion between the film layers is improved, some film layers which cannot be combined under vacuum can be effectively connected in the mechanical combination mode, the equipment investment cost is reduced, the multi-layer film system of various types is prepared by a single device, the substrate rework is effectively reduced or prevented, and the production cost is greatly reduced.

The application provides an electromagnetic shock wave generator, comprising an electromagnetic generating assembly and an electromagnetic induction assembly, the electromagnetic generating assembly is arranged on one side of the electromagnetic induction assembly; wherein the electromagnetic generating assembly comprises a coil and a conductive piece connected with each other, the electromagnetic induction assembly comprises a clamping piece and a metal diaphragm fixed at least partially to the periphery of the clamping piece, the metal diaphragm is arranged on one side of the coil and can vibrate under the action of the coil; wherein a metal sheet is arranged on the side of the metal diaphragm away from the coil, the radial dimension of the metal sheet is smaller than the radial dimension of the metal diaphragm, and the metal sheet is arranged at the middle part of the metal diaphragm. The electromagnetic shock wave generator provided by the application can generate shock waves, and the metal diaphragm generating the shock waves will not be damaged due to external microjet impact and other factors, meanwhile, the shock waves will not be excessively lost, the service life is prolonged and the functionality is not reduced.

The invention relates to an etching liquid composition for a copper-based metal film. The etching liquid composition for the copper-based metal film according to the invention comprises hydrogen peroxide, a hydrogen peroxide stabilizer, tetrazole substituted by amino, tetrazole substituted by (C1-C4) alkyl, an ammonium compound and organic acid containing one carboxyl group.

A first stacked structure and a first sidewall spacer are formed in a first region. A second stacked structure including a metal film is formed in a second region. In the first region, an epitaxial layer is formed on a semiconductor layer. The first sidewall spacer is removed. A first silicon oxide film is formed on a surface of the epitaxial layer exposed from a first insulating film. A thickness of each of the first insulating film and the first silicon oxide film is reduced by performing a cleaning treatment using an aqueous solution containing ammonia and an activator on each of the first insulating film and the first silicon oxide film. An extension region is formed in each of the semiconductor layer and the epitaxial layer by performing an ion implantation so as to pass through each of the first insulating film and the first silicon oxide film.

The parabolic reflector antenna is widely applied to occasions such as satellite communication, electromagnetic signals are reflected by the reflector, and the signals have perfect directivity. A parabolic reflecting surface is usually made of a hard material, and has the problems of complex structure, inconvenience in carrying and particularly high cost. In order to solve the problems of complicated structure, inconvenience in carrying, higher cost and the like, the utility model provides a reflecting surface scheme which is simple in structure and low in cost, and is particularly suitable for emergency and disposable occasions. The scheme of the utility model is as follows: two circular plastic films are compressed on the periphery, one plastic film is made of wave-transparent material, the other plastic film is a plastic film covered with a metal film, an inflating and deflating nozzle is arranged on the plastic film, the plastic film can be in a folded state when being stored, the plastic film is inflated on site when being used, one side of the film with the metal film is in a paraboloid shape after being inflated, and the other side of the film with the metal film is in a paraboloid shape. The plane points to a communication object, and microwave signals can be transmitted or received through a feed source.