4811 results about "Electron bunches" patented technology

A process and apparatus for free form fabrication of a three-dimensional work piece comprising (a) feeding raw material in a solid state to a first predetermined location; (b) depositing the raw material onto a substrate as a molten pool deposit under a first processing condition; (c) monitoring the molten pool deposit for a preselected condition; (d) comparing information about the preselected condition of the monitored molten pool deposit with a predetermined desired value for the preselected condition of the monitored molten pool deposit; (e) solidifying the molten pool deposit; (f) automatically altering the first processing condition to a different processing condition based upon information obtained from the comparing step (d); and repeating steps (a) through (f) at one or more second locations for building up layer by layer a three-dimensional work piece. The apparatus is characterized by a detector that monitors a preselected condition of the deposited material and a closed loop electronic control device for controlling operation of one or more components of the apparatus in response to a detected condition by the detector.

A process (and apparatus for performing the process) for layer manufacturing a three-dimensional work piece comprising the steps of; feeding raw material in a solid state to a first predetermined location; exposing the raw material to an electron beam to liquefy the raw material; depositing the raw material onto a substrate as a molten pool deposit, the deposit having a forward edge region in an x-y plane with a forward edge region width and a trailing edge region in the x-y plane with a trailing edge region width, under at least one first processing condition; monitoring the molten pool deposit for at least one preselected condition using detecting of scatter from a scanning electron beam contemporaneously with the depositing step; solidifying the molten pool deposit; automatically altering the first processing condition to a different processing condition based upon information obtained from the comparing step; and repeating steps at one or more second locations for building up layer by layer, generally along a z-axis that is orthogonal to the x-y plane, a three-dimensional work piece.

A high resolution and high data rate spot grid array printer system is provided, wherein an image representative of patterns to be recorded on a reticle or on a layer of a semiconductor die is formed by scanning a substrate with electron beams. Embodiments include a printer comprising an optical radiation source for irradiating a photon-electron converter with a plurality of substantially parallel optical beams, the optical beams being individually modulated to correspond to an image to be recorded on the substrate. The photon-electron converter produces an intermediate image composed of an array of electron beams corresponding to the modulated optical beams. A de-magnifier is interposed between the photon-electron converter and the substrate, for reducing the size of the intermediate image. A movable stage introduces a relative movement between the substrate and the photon-electron converter, such that the substrate is scanned by the electron beams.

The invention is to a dual beam process for providing an ion-conducting membrane with a thin metal or metal-oxide film. The process includes the cleaning of a membrane surface with a low energy electron beam followed by the deposition of the metal or metal-oxide film by a high energy electron beam of ions.

A method for increasing the resolution when forming a three-dimensional article through successive fusion of parts of a powder bed, said method comprising providing a vacuum chamber, providing an electron gun, providing a first powder layer on a work table inside said vacuum chamber, directing an electron beam from said electron gun over said work table causing the powder layer to fuse in selected locations to form a first cross section of said three-dimensional article, providing a second powder layer on said work table, directing the electron beam over said work table causing said second powder layer to fuse in selected locations to form a second cross section of said three-dimensional article, reducing the pressure in the vacuum chamber from a first pressure level to a second pressure level between the providing of said first powder layer and said second powder layer.

The present invention relates to technology and apparatus with high energy beam to sinter or melt and deposit material successively to realize laminated solid manufacture. The present invention features that the electronic beam scan controller controls the electronic beam to scan fast in pattern projection mode for heating powder homogeneously. Each scanning of the electronic beam has short time in the selected area, so that the scan initiating point has no great temperature change generated during the whole scanning course. Through one or several frames of scanning, the material in the forming area has temperature synchronously raised to reach the sintering or re-melting temperature for deposition onto the forming area before synchronous cooling. The present invention has greatly reduced heat stress and raised forming precision and quality.

The invention discloses equipment for manufacturing a large-size metal part in a high energy beam additive manufacturing mode and a control method of the equipment. The equipment comprises a work cavity, a worktable, a control system, a high energy beam scanning generator, a powder storage hopper, a powder laying device and a gas purification module, wherein the worktable is composed of a forming cylinder and a powder recycling cylinder, and the upper surface of the forming cylinder and the upper surface of the powder recycling cylinder are coplanar and form a work plane. The control system controls the high energy beam scanning generator and the powder laying device to move opposite to the worktable in the powder laying direction. The equipment for manufacturing the large-size metal part in the high energy beam additive manufacturing mode and the control method of the equipment largely shorten the waiting time caused by pre-installation of a powder bed when a common laser/electron beam selective melting technology is used for processing a part, thereby obviously improving the forming efficiency of high energy beam additive manufacturing. Through the application of the equipment for manufacturing the large-size metal part in the high energy beam additive manufacturing mode and the control method of the equipment, a metal part with a meter-grade size, high performance, high accuracy and a complex structure can be manufactured efficiently and rapidly.

An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

A substrate measuring apparatus includes a reference value storage unit, an electron irradiator, a current measuring device, and a property value calculating device. The reference value storage unit stores data on the relationship between current flow in a sample substrate with a contact hole of known characteristics that is irradiated by an electron beam. The current measuring device measures current flow in a test substrate. The property value calculating device calculates the property value of the contact hole formed in a material layer of the test substrate using the current flow in the test substrate and the data stored in the reference value storage unit. The property values of the contact hole may be a surface area of underlying substrate exposed by a contact hole or an amount of residual material remaining in the contact hole.

The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible. To provide high accuracy, the apparatus is configured such that the axes of its optical systems can be aligned, and aberrations corrected, by a variety of methods.

In one aspect, the present invention relates to a microfluidic chamber. In one embodiment, the microfluidic chamber has a first sub-chamber and at least one second sub-chamber. The first sub-chamber has a first window and a second window. Both the first window and the second window are transparent to electrons of certain energies. The second window is positioned substantially parallel and opposite to the first window defining a first volume therebetween. The first window and the second window are separated by a distance that is sufficiently small such that an electron beam that enters from the first window can propagate through the first sub-chamber and exit from the second window. The at least one second sub-chamber is in fluid communication with the first sub-chamber and has a second volume that is greater than the first volume of the first sub-chamber.

An electron beam apparatus is configured for dark field imaging of a substrate surface. Dark field is defined as an operational mode where the image contrast is sensitive to topographical features on the surface. A source generates a primary electron beam, and scan deflectors are configured to deflect the primary electron beam so as to scan the primary electron beam over the substrate surface whereby secondary and/or backscattered electrons are emitted from the substrate surface, said emitted electrons forming a scattered electron beam. A beam separator is configured to separate the scattered electron beam from the primary electron beam. The apparatus includes a cooperative arrangement which includes at least a ring-like element, a first grid, and a second grid. The ring-like element and the first and second grids each comprises conductive material. A segmented detector assembly is positioned to receive the scattered electron beam after the scattered electron beam passes through the cooperative arrangement. Other embodiments, aspects and features are also disclosed. The apparatus is configured to yield good topographical contrast, high signal to noise ratio, and to accommodate a variety of scattered beam properties that result from different primary beam and scan geometry settings.

The invention discloses a flexible substrate used for optoelectronic devices and comprises a flexible substrate; the invention is characterized in that a bonding layer and a conductive thin film are arranged on the surface of the flexible substrate; the conductive thin film is deposited on the surface of the bonding layer; and the material of the bonding layer is an adhesive with a double-curing system comprising UV curing-thermal curing or UV curing-microwave curing or UV curing-anaerobic curing or UV curing-electron beam curing. The substrate solves the problem of poor adhesion between the deposited conductive thin film and the substrate due to low surface energy of the flexible substrate and improves the barrier properties of the substrate on water and oxygen, and also achieves good smoothing effect on the surface of the substrate; besides, the preparation method is simple and effective, which can significantly reduce the substrate production cost and process difficulty and increase the substrate yield rate in the etching process.

There is provided both an electron beam apparatus and a lens array, capable of correcting a curvature of field aberration under various optical conditions. The electron beam apparatus comprises the lens array having a plurality of electrodes, and multiple openings are formed in the respective electrodes. An opening diameter distribution with respect to the respective opening diameters of the plural openings formed in the respective electrodes are individually set, and voltages applied to the respective electrodes are independently controlled to thereby independently adjust an image forming position of a reference beam, and a curvature of the lens array image surface.

A computed tomography imaging scanner (10) acquires helical cone beam projection data for a volume of interest (46) using at least two source trajectory helices. A reconstruction processor (62) reconstructs the projection data for each helix to generate a corresponding time skewed image representation. A voxel time processor (66) computes an acquisition time for each voxel in each time skewed image representation. A voxel interpolator (68) computes an interpolated voxel value for each voxel based on values of the voxel in the time skewed image representations and corresponding voxel acquisition times. In an electronic embodiment, the computed tomography scanner (10) includes an x-ray source (12) with an axially oriented cylindrical anode (92), an electron source (96₁, 96₂) irradiating the cylindrical anode (92) to produce an x-ray beam (120, 122, 124, 126), and an electron beam deflector (98, 100) that deflects the electron beam along the anode (92) to axially sweep the x-ray beam.