5391 results about "Electron bunches" patented technology

The invention provides a preparation method of a transmission electron microscope ultrathin sample with a cross section of an electron beam sensitive material, which comprises the following steps: selecting a specific region as a to-be-extracted sample region for the electron beam sensitive material by adopting an electron beam imaging technology; depositing a protective layer on the surface of the to-be-extracted sample area by adopting an electron beam and / or an ion beam; bombarding a to-be-extracted sample area by utilizing a high-energy ion beam, extracting an electron beam sensitive material cross section sample from the to-be-extracted sample area, and fixing the extracted sample to a metal bracket; performing pre-thinning treatment on the extracted sample by using a focused ion beam to obtain a first thinned sample of which the thickness is reduced to be less than a first thickness; and transferring the first thinned sample into a micro-beam fixed-point ion thinning system, and carrying out multi-time stepped low-energy ion beam fine thinning treatment on the first thinned sample by using inert gas ion micro-beams to obtain a second thinned sample which is clean in surface and free of a surface ion damage layer and has the thickness reduced to be less than a second thickness, and taking the second thinned sample as a transmission electron microscope ultrathin sample.

The invention relates to a multi-layer composite black film and a preparation method thereof. The multi-layer composite black film is formed by sequentially stacking a base material layer, a multi-layer film system and a top covering layer, the multi-layer film system is formed by alternately stacking a plurality of absorption layers and a plurality of oxide layers, the number of the layers is 7-30, an initial layer is an oxide layer, the refractive indexes of the oxide layers are the same (1.4-1.5), the thickness ratio of the oxide layers to the absorption layers is larger than 2, and the thickness ratio of the top covering layer to the absorption layers is larger than 1. And the thicknesses of the two layers are increased and then reduced from the substrate layer to the top covering layer. A buffer layer with gradually changed oxygen content is arranged between the oxide layer and the absorption layer, and both the oxide layer and the top covering layer are made of silicon dioxide. The preparation method comprises the following steps: providing the substrate layer, alternately depositing the absorption layer and the oxide layer by using a magnetron sputtering or electron beam evaporation process to form a multilayer film system, then forming the top covering layer, controlling parameters such as vacuum degree, power, temperature and the like during deposition, and forming the buffer layer in the same cavity. The multilayer composite black film has the inner surface reflectivity of less than 1% and the appearance surface reflectivity of less than 5%, and is simple in structure and low in preparation cost.

The utility model relates to the technical field of electron beam transmission, in particular to a magnet system. Comprising a first shaping unit and a second shaping unit, and the first shaping unit comprises first quadrupole iron tightly attached to an outlet of the accelerating tube and first octupole iron arranged at the focus position of the first quadrupole iron; the second shaping unit comprises second quadrupole iron and second octupole iron, the second quadrupole iron and the first octupole iron meet a first preset distance, the second octupole iron is arranged at the focus position of the second quadrupole iron, and the second shaping unit and the radiation field area meet a second preset distance; the inner diameter of the first octupole iron and the inner diameter of the second octupole iron are both larger than or equal to the maximum size of an electron beam group. Therefore, the quadrupole iron and the octupole iron are utilized to form the shaping unit which is homogenized in one direction, so that the problems that in the prior art, in the electron beam transmission process, a large amount of dose is lost, the size of a radiation field is limited, and the radiation field cannot be adjusted at will are solved; therefore, the electron beam bunch generated by the linear accelerator can be expanded and homogenized in a short distance.

The invention relates to the technical field of regeneration of waste polyester, in particular to a polyester micro-plastic recycling and impurity removing method and equipment. According to the method, the irradiation technology is adopted for treating the polyester micro-plastic, the polyvinyl chloride is removed by combining electron beam irradiation with the specific gravity method, the radiation dosage and time are accurately controlled, the polyvinyl chloride in the polyester micro-plastic can be effectively removed, the color of the polyester micro-plastic is not affected, and the treated polyester micro-plastic can meet the spinning requirement. The equipment is used for realizing the impurity removal method and comprises irradiation treatment equipment, a separation tank, a cleaning tank, a dehydrator and a drying tower. The equipment is simple in structure and convenient to operate, the radiation dosage and time can be accurately controlled in the impurity removal process, the surface temperature of the polyester micro-plastic is effectively controlled, and production and popularization are easy.

The invention relates to the field of microelectronic manufacturing, and discloses a high-performance monocrystalline silicon nano wafer manufacturing process which comprises the following steps: preparing a monocrystalline silicon wafer, and obtaining a high-quality monocrystalline silicon wafer through fine cutting, chemical mechanical polishing and surface residual stress elimination treatment; multi-stage cleaning and surface treatment are carried out, and surface pollutants are removed through combination of molecular chromatography, electric field assisted ultrasonic cleaning and low-temperature plasma cleaning; and manufacturing a nano structure, and forming a complex nano structure by adopting multi-stage electron beam lithography, segmented reactive ion etching and self-adaptive deep etching regulation and control. The surface quality, the mechanical strength and the electrical property of the wafer are remarkably improved through the technologies of refined monocrystalline silicon wafer preparation, multi-stage cleaning, advanced nanostructure manufacturing, self-adaptive heat treatment and the like; and through surface functionalization and multi-layer high-precision packaging, the environmental tolerance and long-term reliability of the nanostructure are enhanced.

The invention discloses a laser electron beam composite additive manufacturing method and system, and relates to the field of laser directional energy deposition, an electron beam is used as a heat source to melt metal powder, and a molten pool is formed on the surface of a substrate; three indexes including the temperature, the form and depth and the surface defect of the molten pool are obtained in real time, and when the three indexes meet preset conditions at the same time, laser serves as a main heat source, electron beams serve as an auxiliary heat source, and the metal powder continues to be molten till deposition is formed; in the cooperative working process of the laser and the electron beam, an energy distribution diagram is constructed based on multiple pieces of detection data, and temperature and form distribution of a molten pool are obtained; laser parameters and electron beam power parameters are adjusted in real time based on the temperature and form changes of the molten pool; the preset conditions are that the average temperature of the molten pool reaches a set stable temperature interval, the surface fluctuation of the molten pool is reduced to a set standard range, and the defect occurrence rate is lower than a set threshold value. The deposition precision can be improved, the thermal stress influence can be reduced, defects can be reduced, and efficient energy utilization is achieved.

The invention relates to the technical field of medical instruments, and discloses an additive manufacturing bionic bone trabecula full-porous interbody fusion cage which is applied to spinal fusion surgery and is of a bionic bone trabecula full-porous structure made of medical metal through a laser melting or electron beam melting additive manufacturing technology. The interbody fusion cage comprises a front end face, a rear end face, a first side surface, a second side surface, an upper fusion face and a lower fusion face, the upper fusion face and the lower fusion face make direct contact with a vertebral body end plate of a spine, anti-skid teeth are arranged on the surfaces of the upper fusion face and the lower fusion face, and a bone grafting window penetrating through the upper fusion face and the lower fusion face is formed in the center of the interbody fusion cage. The interbody fusion cage has the structure and mechanical property similar to those of cancellous bone and trabecular bone of a human body, can improve the bone combination area and bone ingrowth space, has excellent initial and long-term stability, and can effectively reduce stress shielding so as to improve the bone fusion capability.

An apparatus includes a transmission x-ray source having a window including a target layer of at least one x-ray generating material and an internal aperture configured to allow a first portion of an electron beam to bombard the target layer and to block a second portion of the electron beam from bombarding the target. The first portion of the electron beam has a full-width-at-half-maximum width at the target less than or equal to 1 micron. The window is spaced from the internal aperture by a first distance D1. The apparatus further includes an x-ray detector system having a scintillator, an optical assembly, at least one image sensor configured to receive and respond to visible light by generating electrical signals, and a motorized stage configured to controllably adjust a position of the scintillator such that the scintillator is spaced from the window by a second distance D2, wherein D22 / (D1+D2)2 is less than 0.2.

The present invention relates to the field of titanium alloy smelting technology and discloses a method for preparing a high-performance two-phase titanium alloy at low cost by melting flat ingots in an electron beam cooling hearth furnace. The method comprises a two-phase titanium alloy, wherein the nominal composition of the two-phase titanium alloy is proportioned, with TC4 titanium alloy return material as the main material, supplemented by an intermediate compensating alloy, and an improved charging method. Subsequently, an electron beam cooling hearth furnace is used to melt the two-phase titanium alloy ingot. The present invention uses TC4 titanium alloy return material as the main material and melts the two-phase titanium alloy ingot in an electron beam cooling hearth furnace to produce a directly rolled two-phase titanium alloy ingot, eliminating the subsequent blanking and forging process. This not only reduces raw material costs but also shortens the process flow, thereby achieving the goal of low-cost production of the two-phase titanium alloy.

The invention relates to the technical field of data processing, in particular to an electron beam welding state detection method and system, and the method comprises the steps: obtaining a voltage data sequence in a welding process; interpolating missing data in the voltage data sequence by using an HTFE algorithm, calculating a correction value of a prediction interval error factor in the HTFE algorithm when each missing data is interpolated, and replacing the corresponding missing data by using the voltage data at the corresponding moment predicted based on the correction value to obtain a complete data sequence; and performing anomaly detection on the complete data sequence, and detecting the welding state based on an anomaly detection result. The welding state of the electron beam can be accurately detected.

The invention discloses a method for preparing titanium alloy flat ingots by the combination of a vacuum consumable skull melting furnace and an electron beam cold hearth furnace. By using a large proportion of TC4 return materials and adopting the combination process of a vacuum consumable skull melting furnace + an electron beam cold hearth furnace, titanium alloy flat ingots with high stability and suitable for direct rolling are prepared. The invention effectively reduces carbon emissions and production costs from the aspects of raw materials and preparation processes, and helps to realize the recycling of titanium resources and the short-process preparation of titanium alloys.

The invention discloses a method for preparing a titanium alloy slab ingot by duplex of a vacuum consumable skull furnace and an electron beam cold bed furnace, and the titanium alloy slab ingot which is high in stability and can be used for direct rolling is prepared by adopting a large-proportion TC4 return scrap through a duplex process of the vacuum consumable skull furnace and the electron beam cold bed furnace. According to the method, carbon emission and production cost are effectively reduced from the aspects of raw materials and the preparation process, and recycling of titanium resources and short-process preparation of the titanium alloy are facilitated.

The invention relates to electron beam evaporation coating equipment and an application method thereof. The electron beam evaporation coating equipment comprises an evaporation chamber, an electron gun system, a first vacuumizing system, a heating table mechanism, a sample table mechanism and an ion source system, the sample table mechanism is rotationally connected with the heating table mechanism, and the sample table mechanism comprises a substrate clamping part for clamping a substrate; the ion source system is connected with the top of the evaporation chamber and is used for cleaning the substrate; the first driving system is used for driving the first rotating shaft to rotate; the second driving system is used for driving the second rotating shaft to rotate; the second rotating shaft drives the heating table mechanism and the sample table mechanism to synchronously and integrally overturn; and when the sample table mechanism turns over to enable the substrate clamping part to be opposite to the ion source system, the substrate can be placed, cleaned and turned over. The device can be turned over to a specific angle, the interaction between film bases can be improved through special dip angle film coating, and the binding force is improved. The sample table mechanism can turn over to enable the substrate to directly face the ion source system.

The invention relates to the technical field of semiconductor equipment, in particular to a plating pot for electron beam evaporation coating, which comprises a vacuum cavity, an electron beam emission hole is arranged at the bottom in the vacuum cavity, a crucible is arranged in the vacuum cavity, a support is rotatably connected in the vacuum cavity, a plurality of planet pots are connected to the support, and planet shafts are arranged in the centers of the planet pots. The planet shaft is rotationally connected with the support through a rotating frame, a driving shaft is rotationally connected to the support, the axis of the driving shaft and the axis of the planet shaft are arranged in a staggered mode, and the driving shaft is connected with the planet shaft through an inclined connecting rod. The wafer is attached to the planetary pot, and the support drives the planetary pot to revolve for film coating. The driving shaft is started, the planet shaft rotates around the axis of the driving shaft, the planet pot continuously swings in a reciprocating mode, and the inclination angle of the planet pot during film coating is changed, especially for a film coating sample with an inclined side wall angle. The coating property of the inclined side wall of the sample can be greatly improved, and the situation that the side wall film coating is broken or the connection strength is not enough is avoided.

The invention relates to the technical field of metal materials, and discloses a preparation method of high-purity vanadium, which comprises the following steps: step 1, controlling the purity, granularity and content of raw materials for preparing a vanadium-aluminum intermediate alloy; 2, carrying out an aluminothermic reaction in a vacuum aluminothermic smelting furnace; thirdly, a plate ingot is smelted in a vacuum electron beam horizontal furnace for the first time; fourthly, the plate ingot is smelted in the vacuum electron beam horizontal furnace for the second time; and 5, smelting the high-purity vanadium ingot in a vacuum electron beam ingot pulling furnace. According to the method, traditional slag formers such as CaO are not used, so that alloy components are more stable in the smelting process, component fluctuation caused by the reaction of the slag formers and main reactants is reduced, the reaction temperature and degree are controlled by controlling the addition amount of the Al2O3 cooling material, energy is saved, and the smelting cost is reduced; the beneficial effects that a CaO slag former does not need to be used, and introduction of impurities is avoided are achieved.

The invention provides a fluorine-containing aromatic acid ligand modified zirconium metal oxide nano-cluster photoresist material as well as a preparation method and application thereof. The preparation method of the fluorine-containing aromatic acid ligand modified zirconium metal oxide nano-cluster photoresist material comprises the following steps: mixing a Zr6O4 (OH) 4 (MAA) 12 solution and a fluorine-containing aromatic acid ligand compound solution, and carrying out reaction, rotary evaporation and drying to obtain the fluorine-containing aromatic acid ligand modified zirconium metal oxide nano-cluster photoresist material. The preparation method is simple, cheap and easily available in raw materials, low in cost and suitable for industrial production. The fluorine-containing aromatic acid ligand modified zirconium metal oxide nano-cluster photoresist material can be suitable for ultraviolet lithography, electron beam lithography and extreme ultraviolet lithography, and the formed photoetched pattern has the advantages of low line edge roughness, high resolution and the like, and has wide application prospects.

The invention belongs to the technical field of vacuum coating, and particularly relates to a vacuum coating machine electron gun control method and system.The control method comprises the steps that in the coating process, key real-time parameters reflecting the working state of an electron gun and the evaporation process are continuously collected and fused, and the current coating state is evaluated in real time based on the key real-time parameters; and in combination with preset coating process requirements, an electron beam control target instruction set of a next control period is dynamically generated through a built-in decision mechanism and is sent to a power controller, a focusing coil controller and a scanning coil controller of the electron gun, and the electron gun is driven to adjust the power output, the focusing state and the scanning motion of the electron gun in real time. Through accurate and stable control of the evaporation rate, material characteristic changes are effectively coped with through a strong closed loop of power and the evaporation rate; the dynamically planned scanning path can actively compensate the non-uniformity of the thermal field of the crucible, and beam spot energy distribution is optimized in combination with focusing adjustment, so that the uniformity of the thermal field is remarkably improved.

The invention relates to a focused ion beam ultrathin section sample preparation pretreatment method for a wafer sample, and belongs to the technical field of wafer material microscopic experiments. The wafer sample preparation pretreatment method provided by the invention comprises the following steps: (1) depositing a metal oxide on the surface of a wafer sample by adopting an atomic layer deposition technology to obtain an ALD layer; (2) coating a curing glue solution on the surface of the ALD layer, and curing to obtain a curing glue layer; and (3) plating a conductive protection layer on the surface of the cured adhesive layer to finish sample preparation pretreatment. The sample preparation pretreatment method disclosed by the invention can well solve the problems of irradiation damage and deformation of a fine structure which is not resistant to electron beam irradiation, curtain effect in a cutting process, unobvious structural boundary in a shooting process and the like in focused ion beam ultrathin section sample preparation, and has good application prospects in the technical field of wafer material microscopic experiments. And the practical value is very high.

The invention discloses a pre-detection system and a pre-detection method for an electronic gun. The pre-detection system comprises a deflection lens cone, a measurement lens cone and a control module, the measuring lens cone and the deflection lens cone are respectively and electrically connected with the control module; during pre-detection, the to-be-detected electron gun lens cone is installed right above the deflection lens cone, and the control module is electrically connected with the electron gun lens cone. The control module is used for controlling the electron gun to emit an electron beam and controlling the electron beam to deflect in a first direction and a second direction through the deflection lens cone, so that the electron beam performs point-by-point scanning on a first scanning range; an electron beam collecting device in the measuring barrel lens is used for collecting a current value corresponding to each scanning point, and the control module is further used for generating a grayscale image based on the current values and adjusting the position of the electron gun according to the position of a hot spot in the grayscale image until the center of the hot spot coincides with the center of the image. The maintenance efficiency of the electron microscope equipment can be improved, the maintenance difficulty is reduced, and the downtime is shortened.

The invention discloses a method and device for predicting the fatigue life of a high-temperature alloy vacuum electron beam welding structure, and belongs to the technical field of aero-engines. The method comprises the following steps: acquiring fatigue experiment data of a target high-temperature alloy standard sample; extracting the maximum area of an initial defect, a defect shape factor and crack source position information; obtaining a stress intensity factor range considering defect morphological characteristics and a fatigue crack propagation threshold value of a material structure containing initial defects, and correcting a damage tolerance theoretical formula to obtain simulation data; fatigue test data and simulation data are fused to form an initial data set, a fatigue limit is calculated and expanded to the data set, the expanded data set serves as input, training is conducted through a support vector regression method, hyper-parameters are determined through Bayesian optimization, and a fatigue life prediction result of the high-temperature alloy vacuum electron beam welding structure is output. The method provided by the invention can well consider the influence of different morphology defects on the fatigue performance of the welded joint.

The invention discloses a nonlinear Hall terahertz rectifying device which comprises a substrate, an oxide layer, an absorption layer and an electrode from bottom to top. The substrate is made of intrinsic high-resistance silicon, the oxide layer is made of silicon dioxide, the absorption layer is a Weel semimetal film, and the electrode is a four-end metal electrode. The Weel semimetal thin film is a niobium iridium tellurium (NbIrTe4) thin film. A cross-shaped structure is etched on the niobium-iridium-tellurium thin film, and a four-end metal electrode is manufactured through electron beam exposure, electron beam evaporation and a stripping technology. According to the invention, a simple cross-shaped geometric structure on Weel semimetal is utilized to couple an oscillating terahertz light field radiated along the longitudinal direction, and the generation of a direct current electric signal at the transverse end is realized through a nonlinear Hall effect induced by the Bell curvature, and the process does not involve the help of any external field. According to the invention, the broadband terahertz response of 0.02-0.82 THz is realized, the power consumption is low, and integration is facilitated.

Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.

The invention relates to an electron beam additive manufacturing method and system for a titanium-aluminum intermetallic compound, and the electron beam additive manufacturing method for the titanium-aluminum intermetallic compound is realized through the electron beam additive manufacturing system for the titanium-aluminum intermetallic compound. The invention relates to a method for carrying out layer-by-layer stacking forming according to a preset track, carrying out follow-up scanning heating by adopting at least two electron beams and homogenizing a temperature field of a formed part, in particular to a rapid additive manufacturing method for a high-temperature material which is difficult to weld and needs a small temperature gradient and low stress in the forming process. The method can solve the problems of high manufacturing difficulty, high manufacturing cost and the like of the current common processing technology of intermetallic compound parts such as titanium and aluminum.

The invention discloses a rapid development method and system for a high-performance nodular cast iron material based on electronic metallurgy, and relates to the technical field of electronic metallurgy, and the rapid development method comprises the steps that a high-performance nodular cast iron raw material is smelted through multi-stage electron beams, and uniform molten metal is obtained; monitoring the chemical components and temperature change of the molten metal in real time, and dynamically adjusting the addition of the spheroidizing agent; the pouring speed and pressure of the molten metal subjected to spheroidizing treatment are intelligently controlled, and casting pouring is conducted; the internal stress change of the casting is monitored in real time through an embedded stress sensor, and the casting cooling process is adjusted; the cooled casting is subjected to surface treatment, heat treatment and machining; component detection and performance testing are conducted on the casting obtained after treatment and machining are completed; through the multi-stage electron beam melting technology, accurate control over the temperature and chemical components of the molten metal is achieved, and the uniformity and stability of the molten metal are ensured.

The invention relates to the technical field of aero-engines, in particular to a weak-rigidity welding casing blade bending deformation control method which mainly comprises the following steps: firstly, setting the steps of performing electron beam welding on a blade, an inner casing and an outer casing: positioned welding, penetration welding and modification welding; then setting the electron beam welding sequence of strip welding seams between the blade and the inner casing as well as between the blade and the outer casing as the third welding seam, the fourth welding seam, the first welding seam and the second welding seam; and finally, the electron beam welding step in the first step is executed on the four welding seams according to the electron beam welding sequence determined in the second step. According to the mechanism of generation of welding buckling deformation, the welding buckling deformation of the blade is compensated by setting the steps of weak-rigidity cartridge receiver blade electron beam welding and setting the welding sequence, the straightness of the cartridge receiver blade is controlled, meanwhile, the influence on stress concentration parts such as a blade body anti-icing groove hole is reduced, the probability of fatigue cracks is reduced, and the service life of the cartridge receiver blade is prolonged. Therefore, the service life of the engine case is prolonged.

The preparation method of the short-wave-pass ultraviolet optical filter comprises the following steps: S1, cleaning a product serving as a glass substrate of a lens; s2, putting the lens into a tool clamp, and hanging the lens into a coating machine; s3, vacuumizing and radio frequency ion source cleaning are carried out; s4, a short-wave pass film system 80.04 H, 90.05 L, 75.25 H, 79.63 L, 66.91 H, 101.42 L, 52.56 H, 105.14 L, 59.19 H, 92.56 L, 62.15 H, 98.59 L, 55.4 H, 102.89 L, 63.02 H, 95.45 L, 60.9 H, 107.93 L, 58.64 H and 55.22 L is plated on the first face of the lens, electron beam evaporation and radio frequency ion source assistance are used for evaporation, the Ta2O5 deposition rate is 0.4 nm / s, and the SiO2 deposition rate is 1 nm / s; s5, cooling and taking out; s6, repeating the steps S1 to S3; s7, plating the second surface of the lens with an antireflection film system of 16.53 H, 26.98 L, 28.44 H and 76.55 L; and S8, cooling and taking out.

An X-ray generator is presented comprising: an electron source generating an accelerated electron beam propagating along a first propagation path with a first general propagation direction; a first crystalline structure located in the first propagation path, and defining a first crystal plane oriented at a predetermined non-zero angle with the first propagation path, and configured to transmit the electron beam therethrough and generate parametric x-ray (PXR) emission being first directional emission along a second propagation path tilted with respect to the first general propagation direction; and a second crystalline structure located in the second propagation path and configured as a monochromator with respect to the PXR emission, and defining a second crystal plane oriented at the predetermined non-zero angle with respect to the second propagation path to thereby provide second directionality for the PXR emission.

The invention discloses a method for preparing a congruent-axis structure refractory medium-entropy alloy by regulating and controlling a liquid bridge transition mode in a double-wire additive manufacturing process and an application of the congruent-axis structure refractory medium-entropy alloy. The invention belongs to the technical field of additive manufacturing. The invention aims to solve the technical problems that liquid bridge transition in the whole process cannot be realized and columnar crystals are extremely easy to form in the process of preparing the refractory medium / high-entropy alloy by adopting an electron beam double-wire additive manufacturing process at present. The method comprises the following steps: firstly, carrying out three-dimensional modeling on a target component, and carrying out slicing treatment; then liquid bridge transition is controlled by regulating and controlling a double-wire feeding strategy; and finally carrying out 3D printing. A double-wire deposition strategy and a control method thereof are adopted, the relative position of the wire and the electron beam, the relative position between the double wires and the relative position of the melting position of the double wires and the melting pool are adjusted, heat input is controlled, stable liquid bridge transition of the double wires under the condition of the constant speed or the non-constant speed is guaranteed, and the welding quality is improved. And thus, the stability of the deposition process and the congruent-equiaxed crystal structure and excellent mechanical property of a deposited part are improved.

The invention discloses an amorphous tungsten superconducting nanowire single-photon detector, which comprises a photosensitive component, and is characterized in that the photosensitive component is an amorphous tungsten superconducting nanowire; the amorphous tungsten superconducting nanowire is prepared by the following steps: (1) growing an amorphous tungsten film on a substrate; and (2) etching the amorphous tungsten film into a roundabout nanowire structure by using electron beam exposure and reactive ion etching methods to obtain the amorphous tungsten superconducting nanowire. According to the invention, the tungsten nanowire with good stability is used as the main body material of the SNSPD, so that the robustness of the SNSPD preparation process is improved, and the service life of the SNSPD device in practical application is prolonged.

The invention relates to a vacuum electron beam welding method for an extra-thick double-sided stainless steel composite blank. The vacuum electron beam welding method comprises the steps that S1, a blank is prepared; s2, processing the surface of the base material carbon steel; s3, processing the surface of the composite stainless steel; s4, assembling and vacuum electron beam direct welding are carried out twice; s5, performing surface anti-oxidation spraying and packaging treatment on the double-sided composite blank after secondary welding; s6, heating the composite blank in a heating furnace, and rolling; and S7, the composite blank is rolled to the thickness required by the product according to the rolling ratio required by the finished product, and the stainless steel + carbon steel + stainless steel extra-thick double-sided stainless steel composite plate can be obtained after cooling. According to the method, the key technical bottleneck of producing the extra-thick double-sided stainless steel composite blank through the vacuum electron beam welding process is solved, particularly, the influence of vacuum electron beam welding magnetic blowing is eliminated, and powerful technical support can be provided for follow-up variety development and stable production.