172results about How to "Reduce defect density" patented technology

The invention belongs to the technical field of semiconductor photoelectric devices, and particularly discloses a preparation method for realizing growth of ultralow-defect perovskite single crystals based on steric hindrance control, which comprises the following steps: preparing a perovskite single crystal precursor solution: dissolving a perovskite single crystal precursor in a homogeneous solvent with coordination capability to prepare the precursor solution; and generating a perovskite single crystal seed crystal: heating the prepared perovskite single crystal precursor solution until microcrystals appear, selecting to form good crystals, drying, and storing as the seed crystal for future use. And growing the perovskite single crystal: putting the generated perovskite single crystal seed crystal into the perovskite single crystal precursor solution, heating, and growing to obtain the perovskite single crystal. The preparation method comprises the following steps: dissolving a precursor in a homogeneous solvent with coordination capability through a temperature reversal crystallization method, and adjusting the temperature to carry out single crystal growth; according to the steric hindrance theory, the growth temperature is selected by regulating and controlling the solvent proportion, and the perovskite single crystal with ultralow defect density is obtained.

The invention provides a preparation method and system for improving the reliability of a gallium nitride transistor, and relates to the technical field of manufacturing, and the method comprises the steps: placing a pretreated sapphire substrate in metal organic chemical vapor deposition equipment, introducing trimethyl gallium and ammonia gas as precursors, and carrying out the epitaxial growth of gallium nitride; an alternating pulse supply technology is adopted, and trace iron doping is introduced in the epitaxial growth process so as to reduce the background carrier concentration in the gallium nitride layer; forming a source electrode structure, a drain electrode structure and a grid electrode structure on the gallium nitride epitaxial layer by adopting photoetching and plasma etching technologies; then, a layer of hafnium oxide with the thickness of 5-10 nanometers is deposited in the grid electrode area through the atomic layer deposition technology to serve as a grid dielectric layer; then a plasma enhanced chemical vapor deposition technology is adopted; and finally, the whole device is processed by using a laser annealing technology, and the annealing process is carried out in a nitrogen atmosphere so as to eliminate an interface state and reduce leakage current.

The invention relates to a perovskite solar cell, which comprises a substrate, a hole transport layer, a perovskite film layer, an electron transport layer and an electrode layer, the perovskite film layer comprises a perovskite material ABX3 and an additive, the additive contains an electron withdrawing group, the additive and the perovskite material are mixed to form the perovskite film layer, and the hole transport layer is arranged between the hole transport layer and the perovskite film layer. A modification material layer is arranged between the perovskite film layer and the electron transport layer, and the modification material layer forms n-type doping on a contact interface of the perovskite film layer. According to the cell, diethyl (3-(trifluoromethyl) benzyl) phosphonate is doped in a perovskite film layer, so that intrinsic weak n-type perovskite is converted into a p-type perovskite at a position close to a hole transport layer, and a surface modification material is arranged between the perovskite film layer and an electron transport layer, so that the perovskite film layer close to the electron transport layer is converted into an n-type perovskite film layer, an efficient p-n junction is formed, and the photoelectric conversion efficiency of the cell is improved. And the efficiency of the perovskite cell is improved.

The utility model relates to the technical field of mobile phone heat dissipation films, in particular to a high-heat-conduction mobile phone middle frame graphite heat dissipation film which comprises a heat dissipation film body, the heat dissipation film body sequentially comprises matte black single-faced adhesive tape, a high-heat-conduction graphite layer and double-faced adhesive tape from top to bottom, the high-heat-conduction graphite layer is formed by stacking low-temperature carbonization layers and is 0.2 mm in thickness, and the high-heat-conduction graphite layer is formed by stacking low-temperature carbonization layers. The low-temperature carbonization layer is formed by graphene through low-temperature carbonization treatment, the heat conductivity coefficient reaches 2000-2100 W / M.K, energy consumption is reduced through low-temperature treatment, the production cost is indirectly reduced due to the low temperature requirement, the graphene is subjected to low-temperature carbonization treatment, the lattice defect density is reduced, and the stability of the heat conductivity coefficient is ensured; and meanwhile, the 0.2 mm high-thermal-conductivity graphite layer is formed by stacking the low-temperature carbonization layers, so that the occupied space of the heat dissipation film body in the middle frame is reduced.

The invention provides a perovskite solution, a perovskite thin film, a preparation method of the perovskite thin film and a photovoltaic device, the perovskite solution comprises a precursor solution and an amino acid additive, and the concentration of the amino acid additive in the perovskite solution is 0.001-0.1 mmol / mL; the amino acid additive comprises any one or a combination of at least two of histidine, a histidine derivative, aspartic acid and an aspartic acid derivative. According to the invention, the influence of air moisture can be avoided, the stability is high, and a photovoltaic device with high photoelectric conversion efficiency can be obtained.

The invention provides an intrinsic magnetic MXene material and a preparation method and application thereof, the preparation method comprises the following steps: S1, mixing an aqueous solution of MXene with an alkaline reagent, and carrying out ultrasonic dispersion to obtain a mixed dispersion liquid; freezing the mixed dispersion liquid into a solid by liquid nitrogen; the alkaline reagent is potassium hydroxide or sodium hydroxide; s2, the obtained solid is subjected to freeze drying, and the Archimedes screw type MXene aerogel is obtained; s3, the Archimedes spiral type MXene aerogel is subjected to heat treatment under the protection of inert gas, and the intrinsic magnetic MXene material is obtained. The invention designs and develops a single-component pure MXene electromagnetic wave absorbing material on the premise of not introducing magnetic nanoparticles.

The invention relates to a method for generating a perovskite in-situ film through assistance of an interface protonation reaction, and the method comprises the following steps: S1, spin coating: carrying out the spin coating of a perovskite precursor solution on an acidic substrate, and forming a complex intermediate phase; the perovskite precursor solution comprises a tin halide, a monovalent cation halide, thiocyanate and an ethylenediamine derivative; s2, annealing: heating and annealing the intermediate phase of the complex on a heating stage, and inducing conversion of the intermediate phase of the complex to the tin-based perovskite thin film through a protonation reaction between the acidic substrate and the ethylenediamine derivative; the chemical structure of the tin-based perovskite is ASnX3. According to the method, the protonation reaction of the acidic substrate and the perovskite interface is utilized to assist in generating high-quality perovskite, the morphology of the thin film is effectively improved, and a high-brightness PeLED device is further prepared.

The invention belongs to the field of photoelectric materials, and particularly relates to a vacuum vapor deposition perovskite material crystallization method, which is characterized in that vacuum vapor deposition of a perovskite precursor is carried out step by step, and a specific additive containing amide, amino, carboxyl and other functional groups is introduced in the deposition process to realize dynamic regulation and control of perovskite grain growth. According to the method, the perovskite crystallization kinetic process can be regulated and controlled, so that the crystallization of perovskite is optimized, the quality of the film is improved, the defects of the perovskite film are reduced, and the fluorescence quantum yield is improved.

The invention discloses fluorite-pyrochlore double-phase high-entropy oxide ceramic powder and a preparation method thereof, and relates to the technical field of high-performance ceramics. The preparation method comprises the following steps: (1) weighing ZrO2 powder, HfO2 powder, Pr6O11 powder, La2O3 powder and Sm2O3 powder with equal atomic percent, putting the ZrO2 powder, the HfO2 powder, the Pr6O11 powder, the La2O3 powder and the Sm2O3 powder into a crucible, and calcining in a muffle furnace to remove moisture and impurities; (2) carrying out ball-milling mixing on the calcined ZrO2 powder, HfO2 powder, Pr6O11 powder, La2O3 powder and Sm2O3 powder, and drying and grinding in a drying box after ball-milling to obtain high-entropy ceramic oxide precursor powder; and (3) putting the high-entropy ceramic oxide precursor powder into a muffle furnace, carrying out heat treatment in an air atmosphere, and cooling and grinding to obtain the high-entropy oxide ceramic powder with the fluorite-pyrochlore dual-phase structure. The chemical formula of the prepared double-phase high-entropy ceramic powder material is (Zr, Hf, Pr, La, Sm) O < 2-delta >, and the double-phase high-entropy ceramic powder material is of a fluorite-pyrochlore double-phase structure, and has low heat conductivity, high thermal expansion coefficient and good heat-conducting property.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing LID, a preparation method of the back contact cell and a cell assembly. The back contact cell capable of reducing the LID comprises a silicon wafer, and a light-receiving surface passivation layer and an anti-reflection layer which are sequentially arranged on a light-receiving surface of the silicon wafer, and the light-receiving surface passivation layer comprises a first tunneling oxide layer and a hydrogen-doped and carbon-doped silicon layer which are sequentially arranged; the silicon layer is amorphous silicon or polycrystalline silicon; the anti-reflection layer comprises a hydrogen-doped silicon carbide film layer, the hydrogen-doped silicon carbide film layer comprises a first hydrogen-doped silicon carbide layer and a second hydrogen-doped silicon carbide layer which are sequentially arranged, the carbon doping concentration of the first hydrogen-doped silicon carbide layer is smaller than that of the second hydrogen-doped silicon carbide layer, the thickness of the first hydrogen-doped silicon carbide layer is 10-30 nm, and the thickness of the second hydrogen-doped silicon carbide layer is 50-100 nm. According to the invention, the passivation effect, the optical effect and the LID anti-attenuation capability can be considered, the LID is reduced, the battery stability is improved, and the battery reliability is improved.

The invention discloses a preparation method of a high-quality beta-Ga2O3 film based on Van der Waals epitaxial growth. The preparation method of the high-quality beta-Ga2O3 thin film comprises the following steps: S1, placing a fluorine crystal mica F-micro substrate in MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and growing a gallium oxide low-temperature nucleating layer on the substrate at a first temperature by taking triethyl gallium as a gallium source and O2 as an oxygen source; s2, taking triethyl gallium as a gallium source and O2 as an oxygen source, and growing a gallium oxide high-temperature epitaxial layer on the gallium oxide low-temperature nucleating layer at a second temperature to obtain the high-quality beta-Ga2O3 thin film, the second temperature is higher than the first temperature. According to the beta-Ga2O3 thin film prepared by the method, the crystal quality is equivalent to that of a thin film obtained by a traditional rigid sapphire substrate, the problem that a high-quality gallium oxide thin film is difficult to prepare by an organic flexible substrate is solved, and the beta-Ga2O3 thin film is separated from the substrate and can be transferred to any target substrate; and the solar-blind ultraviolet photoelectric detector with high performance, flexibility and a vertical structure can be constructed.

The invention discloses a method for preparing single crystal diamond based on a carbon dioxide / methane mixed gas carbon source, which adopts a microwave plasma chemical vapor deposition method and takes CH4 / CO2 mixed gas as the carbon source to prepare the high-quality single crystal diamond, and obviously improves the growth rate of the single crystal diamond. The method solves the problems that the existing carbon dioxide methanation conversion rate is not high, and the carbon dioxide / methane mixed gas output after conversion cannot be directly converted into the high-value single crystal diamond, and the method has important significance for converting the carbon dioxide into the diamond.

The invention is applicable to the technical field of semiconductor materials, and provides a gallium oxide single crystal preparation method which comprises the following steps: cutting a gallium oxide seed crystal into a cuboid, and processing the bottom of the cuboid gallium oxide seed crystal into a wedge shape to obtain a first gallium oxide seed crystal; sequentially carrying out annealing and surface treatment on the first gallium oxide seed crystal to obtain a second gallium oxide seed crystal; and during seeding, lowering the lower part of the second gallium oxide seed crystal to be in contact with the melt, and then sequentially carrying out lifting, shouldering, diameter equalizing, ending and cooling procedures to obtain the gallium oxide single crystal. The quality of gallium oxide crystals is improved, the defect concentration is reduced, and the risk of polycrystal is reduced.

The invention relates to the technical field of silicon carbide single crystal growth, in particular to n-type 4H silicon carbide single crystal growth equipment and a growth method thereof.The growth equipment comprises an equipment frame platform, an operation platform, a power system, a control system, an elevator assembly and a vacuum cavity assembly; the operating platform, the power system and the control system are all arranged on one side of the equipment frame platform, the vacuum cavity assembly is arranged on the equipment frame platform, the elevator assembly corresponding to the vacuum cavity assembly is arranged on the equipment frame platform, and the power system and the control system are both electrically connected with the vacuum cavity assembly. The vacuum furnace further comprises a gas circuit panel assembly, a circulating cooling water supply system, a vacuum detection device and a temperature field lifting and rotating assembly. The vacuum cavity assembly comprises a vacuum chamber, a vacuum furnace cover, a low vacuum pumping device, a high vacuum pumping device, an infrared thermometer and a deflation valve. The wafer size of the silicon carbide single crystal material can be continuously increased, and the defect density is reduced.

The present invention belongs to the technical field of two-dimensional material preparation, and relates to a preparation method and application of a two-dimensional molybdenum disulfide material. Using molybdenum source and sulfur powder as raw materials, and inert gas as carrier gas, the raw materials are transported to the molten glass surface through an intermediate evaporation process to be deposited as solid molybdenum sulfide, and in the subsequent etching-spreading-sulfurization-precipitation process, an ultra-high-quality and ultra-large-area molybdenum disulfide single crystal domain grown at normal pressure and without hydrogenation is obtained. The single crystal domain size of the prepared two-dimensional molybdenum disulfide material can reach 1.5 cm, and then grow into a wafer-level two-dimensional molybdenum disulfide material with a size of 2 inches, and the thickness can be 1-2 layers.

The invention discloses a two-dimensional field effect transistor with high-temperature thermal stability and a preparation method thereof, and mainly solves the problem that a two-dimensional material in an existing two-dimensional field effect transistor can be oxidized and decomposed at high temperature. The device comprises a substrate (1), an insulation packaging protection bottom layer (2), a two-dimensional material film layer (3), an insulation packaging protection top layer (6) and a gate electrode (7) from bottom to top, a source electrode (4) and a drain electrode (5) are arranged at the two ends of the film layer (3), and the packaging protection bottom layer and the packaging protection top layer both adopt any one or combination of more of aluminum nitride, hexagonal boron nitride or silicon nitride. Oxygen molecules in the air are prevented from diffusing to the two-dimensional material film layer for reaction at high temperature, so that the two-dimensional material film layer plays a role in high-temperature protection; the two-dimensional material film layer is made of molybdenum disulfide or tungsten disulfide or tungsten diselenide. The high temperature resistance of the two-dimensional field effect transistor is improved, oxygenolysis of the two-dimensional material at high temperature is avoided, and the two-dimensional field effect transistor can be used for aerospace, deep well drilling or other high-temperature environments.

The invention provides a preparation method of a solar cell and the solar cell, and the method comprises the steps: firstly, providing an initial wafer; processing the initial wafer by adopting a laser process to obtain a substrate layer of which the first surface is provided with a plurality of groove regions and non-groove regions; a first tunneling dielectric layer is formed on the first surface, and the thickness of the first tunneling dielectric layer located in the groove area is larger than that of the first tunneling dielectric layer located in the non-groove area; then, an amorphous silicon layer is formed on the side, away from the substrate layer, of the first tunneling dielectric layer, and the thickness of the amorphous silicon layer located in the groove area is larger than that of the amorphous silicon layer located in the non-groove area; carrying out doping treatment on the amorphous silicon layer to obtain a doped layer; and finally, forming a first electrode on a part of the surface of the groove region. The preparation method of the solar cell can improve the performance of the solar cell.

The invention discloses a method for processing and preparing a hole transport layer of an organic solar cell, and relates to the technical field of solar cells, and the method comprises the following steps: S1, preparing a nickel oxide hole transport layer film, and cleaning the nickel oxide film with deionized water; s2, preparing a to-be-adjusted liquid, and measuring the initial pH value of the to-be-adjusted liquid; s3, calculating the volume of the required sodium hydroxide aqueous solution, and adding a proper amount of the sodium hydroxide aqueous solution into the to-be-adjusted liquid in the step S2 to adjust the pH value of the solution to a proper range; s4, uniformly spreading the solution in the step S3 on the surface of the cleaned nickel oxide hole transport layer thin film, and soaking for 1-15 minutes to ensure sufficient reaction; s5, the nickel oxide hole transport layer thin film is washed with deionized water, redundant sodium hydroxide aqueous solution is removed, then the washed thin film is dried, and aftertreatment is completed; according to the invention, the problem of disordered arrangement of the ionic liquid at the interface is solved, and the performance and stability of the perovskite device are improved.

The invention relates to the technical field of LED epitaxial wafers, and discloses a GaN-based LED epitaxial wafer and a preparation method thereof, and the GaN-based LED epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer, and a P-type semiconductor layer. Wherein the N-type semiconductor layer sequentially comprises a first porous low-temperature GaN layer, a second porous AlGaN / GaN superlattice layer, a third high-temperature GaN layer, a fourth porous AlGaN / GaN superlattice layer and a fifth high-temperature GaN layer. By adopting the invention, the generation of defects in the growth process of the epitaxial material can be reduced, the dislocation density of the material is reduced, and the quality of the epitaxial wafer material is remarkably improved, so that the radiation recombination efficiency in the active region of the light-emitting diode is improved, and meanwhile, the proportion of the photon escape body material in the active region can be remarkably improved.

The invention provides an interface modification method of zinc oxide and a perovskite photoelectric device preparation method using the same, and belongs to the field of perovskite materials. According to the invention, the surface of the zinc oxide (ZnO) layer is spin-coated with an alcohol polymer, a polyvinylpyrrolidone solution or a polyvinyl carbazole solution, and annealing is carried out to form an ultrathin modification layer, so that interface modification of the ZnO transmission layer is realized; the interface modification layer used in the invention can reduce the potential barrier between the electron transport layer and the perovskite layer, and helps perovskite to form a light-emitting layer film with low defect density and good surface appearance; in addition, the operation stability of a perovskite light-emitting diode device can be remarkably improved through the perovskite thin film modified by the ZnO interface of the light-emitting layer of the perovskite photoelectric device.

The application provides a kind of passivation material, passivation layer and perovskite solar cell, with general structure as shown in formula I: X1, X2, X3, X4, X5, X6, X7, X8, X9, X 10 Each independently selected from C or N, and at least one selected from N; R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 Each independently selected from H, C1-C5 alkyl, C1-C5 alkyl nitrile or C1-C5 alkyl hydroxyl, and at least one selected from alkyl nitrile or alkyl hydroxyl. The perovskite solar cell using the passivation layer defined in the application has better fill factor and photoelectric conversion efficiency.

The application relates to the technical field of nanomaterial preparation, and particularly discloses a carbon nanotube preparation method based on carbon source and plasma time sequence cooperation and a carbon nanotube. In the gas phase deposition process, carbon source gas is input in a pulse mode, and a pulse type plasma is synchronously applied, wherein the carbon source input pulse and the plasma output pulse are time-differently matched, the carbon source supply window and the plasma action window form a non-fully-synchronized time sequence coupling relationship, the carbon source activation, transportation, deposition and structure reconstruction process are controlled in the time dimension, and meanwhile, the carbon source gas is introduced from a position close to the plasma action area to maintain the pulse opening and closing characteristics. The method can improve the growth selectivity of the carbon nanotube, reduce the defect density, and is suitable for controllable preparation of single-wall carbon nanotubes. The single-wall carbon nanotube with a semiconductor content greater than or equal to 83% can be prepared with high selectivity, and the product has the advantages of few defects, high purity and high yield.

The invention discloses an atmosphere post-processing method of a perovskite thin film and a perovskite solar cell, and belongs to the technical field of solar cells. The atmosphere post-processing method of the perovskite thin film comprises the following steps: S1, preparing a perovskite precursor solution into a perovskite precursor thin film, and carrying out heat treatment on the perovskite precursor thin film to form a perovskite thin film; s2, placing the perovskite thin film in a constant-temperature and constant-humidity atmosphere condition for perovskite thin film recrystallization; and S3, cooling the recrystallized perovskite thin film in a dry environment to room temperature to prepare a perovskite layer. According to the perovskite thin film, due to the recrystallization and defect passivation effects assisted by the constant-temperature and constant-humidity atmosphere, the grain size of the perovskite thin film is increased, the crystallization quality is improved, the grain boundary of perovskite is reduced, the defect density is reduced, a perovskite layer which is uniform in coverage and smooth in surface can be prepared, and then the photoelectric performance of a battery is efficiently improved.

The present invention proposes a method for ion implantation to enhance multi-layer thin film silicide. The method for ion implantation to enhance multi-layer thin film silicide is to penetrate a single layer or multiple layers of metal film that has been deposited on a semiconductor silicon substrate, bombard the single layer or multiple layers of metal film with argon ions, thereby forming a silicide layer on the surface of an ohmic contact region through the single layer or multiple layers of metal film. Specifically, it comprises: step 1, forming a semiconductor device region on a silicon wafer with a crystal orientation of 100; step 2, forming a single layer or multiple layers of metal film on the semiconductor silicon substrate of the semiconductor device region; step 3, bombarding the silicon wafer substrate with argon ions through the single layer or multiple layers of metal film, and forming a silicide layer on the surface of the ohmic contact region.

The application discloses a preparation method of a sodium ion battery hard carbon negative electrode material based on step-by-step synergistic regulation, and comprises the following steps: S1, biomass pretreatment; S2, low-temperature pre-carbonization to obtain biomass pre-carbonized carbon; S3, physical activation: the pre-carbonized carbon is placed in an activation atmosphere to perform medium-temperature activation, and biomass activated carbon is obtained; S4, high-temperature carbonization: the biomass activated carbon is placed in an inert atmosphere to perform high-temperature carbonization, and a hard carbon intermediate is obtained; S5, chemical vapor deposition coating: the hard carbon intermediate is placed in a mixed atmosphere of a coating carbon source and an inert gas to perform chemical vapor deposition coating, and a surface-coated biomass hard carbon negative electrode material is obtained. The application can realize a higher closed pore volume at a milder temperature, and the synergistic regulation pore forming mode of activating and forming pores first and then high-temperature closing pores also avoids the insufficient closed pores caused by single high-temperature treatment.

This invention discloses a method for preparing a partitioned buffer layer, a patterned composite substrate, and the same method. The preparation method includes: providing a patterned substrate; the three-dimensional pattern on the surface of the patterned substrate has inclined sidewalls, and gap planes exist between adjacent three-dimensional patterns; forming an argon ion accumulation layer, utilizing the repulsive effect between argon ions to bombard the patterned substrate, making the inclined sidewalls positively charged; sputtering negatively charged aluminum atoms that electrostatically adsorb onto the inclined sidewalls to form an aluminum atom thin film; the sputtered aluminum atoms react with at least nitrogen gas to form a first thin film on the gap plane, and the aluminum atom thin film reacts with nitrogen and oxygen gas to form a second thin film on the inclined sidewalls; the first and second thin films constitute a buffer layer. This invention achieves partitioned film formation of a buffer layer on a patterned substrate, where the film elements, proportions, and crystal quality differ and are controllable in different regions, effectively matching the stress and crystal quality during epitaxial growth and reducing defect density.

The embodiment of the utility model provides an epitaxial layer structure of a gallium nitride power device. The epitaxial layer structure comprises a substrate, a high-resistance structural layer, a high-resistance GaN layer, a channel layer and a barrier layer which are sequentially stacked from bottom to top, the high-resistance structural layer comprises a Si-containing material layer and an Al-containing material layer, and the Al-containing material layer is located between the high-resistance GaN and the Si-containing material layer; the constituent elements of the Al-containing material layer comprise Al and N; and the high-resistance GaN layer is a non-doped layer. According to the epitaxial layer structure of the gallium nitride power device, through matching of the Si-containing material layer and the Al-containing material layer, the resistance of the gallium nitride layer is improved, the voltage withstanding characteristic of the gallium nitride device is improved, and meanwhile side effects caused by additional doping are avoided.

The present application discloses a method for preparing a tin-based oxyfluoride compound, comprising the following steps: S1: mixing raw materials SnO, SnF2, TiO2 and Nb2O5, adding ethanol or deionized water, and grinding evenly to obtain a raw material mixture; S2: adding the raw material mixture to a quartz glass tube containing a corundum tube, placing the raw material mixture in the corundum tube, sealing the quartz glass tube, and then placing the sealed quartz glass tube in a muffle furnace at 500-800°C for calcination for 5-10 hours; S3: subjecting the product of step S2 to molten salt treatment to obtain the tin-based oxyfluoride compound. The tin-based oxyfluoride compound material synthesized by the method of the embodiment of the present invention has fewer defects and improved crystallinity, which effectively improves its photocatalytic reaction activity.

The invention provides a preparation method of a tin-doped scaly nano gallium oxide thin film solar blind ultraviolet photoelectric detector. The preparation method comprises the following steps: carrying out cleaning pretreatment on a single crystal GaN substrate; depositing an Au thin film on the pretreated single crystal GaN substrate to serve as a catalyst layer; the preparation method comprises the following steps: mixing Ga2O3, diamond and SnO2 powder according to a certain mass ratio to prepare a precursor; putting the single crystal GaN substrate deposited with the Au thin film and a precursor into a CVD furnace, and growing according to preset gas flow, pressure intensity, reaction temperature and reaction time to obtain a tin-doped scaly nano gallium oxide thin film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide thin film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method. The conductivity of the thin film is improved through tin doping, the specific surface area and light absorption are increased through the scaly nanostructure, high-performance deep ultraviolet photoelectric detection is achieved, and the technical problem that in the prior art, the dark current of a device is high is solved.

This invention provides a light-emitting diode epitaxial wafer and its fabrication method. The light-emitting diode epitaxial wafer includes a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The buffer layer includes a nitrided graphene buffer layer, an h-BN buffer layer, and a B-type GaN layer sequentially deposited on the substrate. x Al 1‑x N buffer layer, AlN buffer layer, wherein, the B x Al 1‑x The boron content in the N-buffer layer gradually decreases along the growth direction of the epitaxial layer. This invention achieves this by sequentially arranging a graphene nitride buffer layer, an h-BN buffer layer, and a boron buffer layer between the substrate and the epitaxial structure. x Al 1‑x N-buffer layers and AlN-buffer layers reduce lattice mismatch between structures, lower defect density, and improve the overall quality of LED epitaxial wafers.