121results about How to "Reduce defect density" patented technology

The invention belongs to the technical field of semiconductor photoelectric devices, and particularly discloses a preparation method for realizing growth of ultralow-defect perovskite single crystals based on steric hindrance control, which comprises the following steps: preparing a perovskite single crystal precursor solution: dissolving a perovskite single crystal precursor in a homogeneous solvent with coordination capability to prepare the precursor solution; and generating a perovskite single crystal seed crystal: heating the prepared perovskite single crystal precursor solution until microcrystals appear, selecting to form good crystals, drying, and storing as the seed crystal for future use. And growing the perovskite single crystal: putting the generated perovskite single crystal seed crystal into the perovskite single crystal precursor solution, heating, and growing to obtain the perovskite single crystal. The preparation method comprises the following steps: dissolving a precursor in a homogeneous solvent with coordination capability through a temperature reversal crystallization method, and adjusting the temperature to carry out single crystal growth; according to the steric hindrance theory, the growth temperature is selected by regulating and controlling the solvent proportion, and the perovskite single crystal with ultralow defect density is obtained.

The utility model relates to the technical field of mobile phone heat dissipation films, in particular to a high-heat-conduction mobile phone middle frame graphite heat dissipation film which comprises a heat dissipation film body, the heat dissipation film body sequentially comprises matte black single-faced adhesive tape, a high-heat-conduction graphite layer and double-faced adhesive tape from top to bottom, the high-heat-conduction graphite layer is formed by stacking low-temperature carbonization layers and is 0.2 mm in thickness, and the high-heat-conduction graphite layer is formed by stacking low-temperature carbonization layers. The low-temperature carbonization layer is formed by graphene through low-temperature carbonization treatment, the heat conductivity coefficient reaches 2000-2100 W / M.K, energy consumption is reduced through low-temperature treatment, the production cost is indirectly reduced due to the low temperature requirement, the graphene is subjected to low-temperature carbonization treatment, the lattice defect density is reduced, and the stability of the heat conductivity coefficient is ensured; and meanwhile, the 0.2 mm high-thermal-conductivity graphite layer is formed by stacking the low-temperature carbonization layers, so that the occupied space of the heat dissipation film body in the middle frame is reduced.

The invention relates to a method for generating a perovskite in-situ film through assistance of an interface protonation reaction, and the method comprises the following steps: S1, spin coating: carrying out the spin coating of a perovskite precursor solution on an acidic substrate, and forming a complex intermediate phase; the perovskite precursor solution comprises a tin halide, a monovalent cation halide, thiocyanate and an ethylenediamine derivative; s2, annealing: heating and annealing the intermediate phase of the complex on a heating stage, and inducing conversion of the intermediate phase of the complex to the tin-based perovskite thin film through a protonation reaction between the acidic substrate and the ethylenediamine derivative; the chemical structure of the tin-based perovskite is ASnX3. According to the method, the protonation reaction of the acidic substrate and the perovskite interface is utilized to assist in generating high-quality perovskite, the morphology of the thin film is effectively improved, and a high-brightness PeLED device is further prepared.

The invention belongs to the field of photoelectric materials, and particularly relates to a vacuum vapor deposition perovskite material crystallization method, which is characterized in that vacuum vapor deposition of a perovskite precursor is carried out step by step, and a specific additive containing amide, amino, carboxyl and other functional groups is introduced in the deposition process to realize dynamic regulation and control of perovskite grain growth. According to the method, the perovskite crystallization kinetic process can be regulated and controlled, so that the crystallization of perovskite is optimized, the quality of the film is improved, the defects of the perovskite film are reduced, and the fluorescence quantum yield is improved.

The invention discloses a method for preparing single crystal diamond based on a carbon dioxide / methane mixed gas carbon source, which adopts a microwave plasma chemical vapor deposition method and takes CH4 / CO2 mixed gas as the carbon source to prepare the high-quality single crystal diamond, and obviously improves the growth rate of the single crystal diamond. The method solves the problems that the existing carbon dioxide methanation conversion rate is not high, and the carbon dioxide / methane mixed gas output after conversion cannot be directly converted into the high-value single crystal diamond, and the method has important significance for converting the carbon dioxide into the diamond.

The present invention belongs to the technical field of two-dimensional material preparation, and relates to a preparation method and application of a two-dimensional molybdenum disulfide material. Using molybdenum source and sulfur powder as raw materials, and inert gas as carrier gas, the raw materials are transported to the molten glass surface through an intermediate evaporation process to be deposited as solid molybdenum sulfide, and in the subsequent etching-spreading-sulfurization-precipitation process, an ultra-high-quality and ultra-large-area molybdenum disulfide single crystal domain grown at normal pressure and without hydrogenation is obtained. The single crystal domain size of the prepared two-dimensional molybdenum disulfide material can reach 1.5 cm, and then grow into a wafer-level two-dimensional molybdenum disulfide material with a size of 2 inches, and the thickness can be 1-2 layers.

The invention discloses a two-dimensional field effect transistor with high-temperature thermal stability and a preparation method thereof, and mainly solves the problem that a two-dimensional material in an existing two-dimensional field effect transistor can be oxidized and decomposed at high temperature. The device comprises a substrate (1), an insulation packaging protection bottom layer (2), a two-dimensional material film layer (3), an insulation packaging protection top layer (6) and a gate electrode (7) from bottom to top, a source electrode (4) and a drain electrode (5) are arranged at the two ends of the film layer (3), and the packaging protection bottom layer and the packaging protection top layer both adopt any one or combination of more of aluminum nitride, hexagonal boron nitride or silicon nitride. Oxygen molecules in the air are prevented from diffusing to the two-dimensional material film layer for reaction at high temperature, so that the two-dimensional material film layer plays a role in high-temperature protection; the two-dimensional material film layer is made of molybdenum disulfide or tungsten disulfide or tungsten diselenide. The high temperature resistance of the two-dimensional field effect transistor is improved, oxygenolysis of the two-dimensional material at high temperature is avoided, and the two-dimensional field effect transistor can be used for aerospace, deep well drilling or other high-temperature environments.

The invention provides a preparation method of a solar cell and the solar cell, and the method comprises the steps: firstly, providing an initial wafer; processing the initial wafer by adopting a laser process to obtain a substrate layer of which the first surface is provided with a plurality of groove regions and non-groove regions; a first tunneling dielectric layer is formed on the first surface, and the thickness of the first tunneling dielectric layer located in the groove area is larger than that of the first tunneling dielectric layer located in the non-groove area; then, an amorphous silicon layer is formed on the side, away from the substrate layer, of the first tunneling dielectric layer, and the thickness of the amorphous silicon layer located in the groove area is larger than that of the amorphous silicon layer located in the non-groove area; carrying out doping treatment on the amorphous silicon layer to obtain a doped layer; and finally, forming a first electrode on a part of the surface of the groove region. The preparation method of the solar cell can improve the performance of the solar cell.

The invention discloses a method for processing and preparing a hole transport layer of an organic solar cell, and relates to the technical field of solar cells, and the method comprises the following steps: S1, preparing a nickel oxide hole transport layer film, and cleaning the nickel oxide film with deionized water; s2, preparing a to-be-adjusted liquid, and measuring the initial pH value of the to-be-adjusted liquid; s3, calculating the volume of the required sodium hydroxide aqueous solution, and adding a proper amount of the sodium hydroxide aqueous solution into the to-be-adjusted liquid in the step S2 to adjust the pH value of the solution to a proper range; s4, uniformly spreading the solution in the step S3 on the surface of the cleaned nickel oxide hole transport layer thin film, and soaking for 1-15 minutes to ensure sufficient reaction; s5, the nickel oxide hole transport layer thin film is washed with deionized water, redundant sodium hydroxide aqueous solution is removed, then the washed thin film is dried, and aftertreatment is completed; according to the invention, the problem of disordered arrangement of the ionic liquid at the interface is solved, and the performance and stability of the perovskite device are improved.

The invention provides an interface modification method of zinc oxide and a perovskite photoelectric device preparation method using the same, and belongs to the field of perovskite materials. According to the invention, the surface of the zinc oxide (ZnO) layer is spin-coated with an alcohol polymer, a polyvinylpyrrolidone solution or a polyvinyl carbazole solution, and annealing is carried out to form an ultrathin modification layer, so that interface modification of the ZnO transmission layer is realized; the interface modification layer used in the invention can reduce the potential barrier between the electron transport layer and the perovskite layer, and helps perovskite to form a light-emitting layer film with low defect density and good surface appearance; in addition, the operation stability of a perovskite light-emitting diode device can be remarkably improved through the perovskite thin film modified by the ZnO interface of the light-emitting layer of the perovskite photoelectric device.

The application provides a kind of passivation material, passivation layer and perovskite solar cell, with general structure as shown in formula I: X1, X2, X3, X4, X5, X6, X7, X8, X9, X 10 Each independently selected from C or N, and at least one selected from N; R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 Each independently selected from H, C1-C5 alkyl, C1-C5 alkyl nitrile or C1-C5 alkyl hydroxyl, and at least one selected from alkyl nitrile or alkyl hydroxyl. The perovskite solar cell using the passivation layer defined in the application has better fill factor and photoelectric conversion efficiency.

The application relates to the technical field of nanomaterial preparation, and particularly discloses a carbon nanotube preparation method based on carbon source and plasma time sequence cooperation and a carbon nanotube. In the gas phase deposition process, carbon source gas is input in a pulse mode, and a pulse type plasma is synchronously applied, wherein the carbon source input pulse and the plasma output pulse are time-differently matched, the carbon source supply window and the plasma action window form a non-fully-synchronized time sequence coupling relationship, the carbon source activation, transportation, deposition and structure reconstruction process are controlled in the time dimension, and meanwhile, the carbon source gas is introduced from a position close to the plasma action area to maintain the pulse opening and closing characteristics. The method can improve the growth selectivity of the carbon nanotube, reduce the defect density, and is suitable for controllable preparation of single-wall carbon nanotubes. The single-wall carbon nanotube with a semiconductor content greater than or equal to 83% can be prepared with high selectivity, and the product has the advantages of few defects, high purity and high yield.

The present invention proposes a method for ion implantation to enhance multi-layer thin film silicide. The method for ion implantation to enhance multi-layer thin film silicide is to penetrate a single layer or multiple layers of metal film that has been deposited on a semiconductor silicon substrate, bombard the single layer or multiple layers of metal film with argon ions, thereby forming a silicide layer on the surface of an ohmic contact region through the single layer or multiple layers of metal film. Specifically, it comprises: step 1, forming a semiconductor device region on a silicon wafer with a crystal orientation of 100; step 2, forming a single layer or multiple layers of metal film on the semiconductor silicon substrate of the semiconductor device region; step 3, bombarding the silicon wafer substrate with argon ions through the single layer or multiple layers of metal film, and forming a silicide layer on the surface of the ohmic contact region.

The application discloses a preparation method of a sodium ion battery hard carbon negative electrode material based on step-by-step synergistic regulation, and comprises the following steps: S1, biomass pretreatment; S2, low-temperature pre-carbonization to obtain biomass pre-carbonized carbon; S3, physical activation: the pre-carbonized carbon is placed in an activation atmosphere to perform medium-temperature activation, and biomass activated carbon is obtained; S4, high-temperature carbonization: the biomass activated carbon is placed in an inert atmosphere to perform high-temperature carbonization, and a hard carbon intermediate is obtained; S5, chemical vapor deposition coating: the hard carbon intermediate is placed in a mixed atmosphere of a coating carbon source and an inert gas to perform chemical vapor deposition coating, and a surface-coated biomass hard carbon negative electrode material is obtained. The application can realize a higher closed pore volume at a milder temperature, and the synergistic regulation pore forming mode of activating and forming pores first and then high-temperature closing pores also avoids the insufficient closed pores caused by single high-temperature treatment.

This invention discloses a method for preparing a partitioned buffer layer, a patterned composite substrate, and the same method. The preparation method includes: providing a patterned substrate; the three-dimensional pattern on the surface of the patterned substrate has inclined sidewalls, and gap planes exist between adjacent three-dimensional patterns; forming an argon ion accumulation layer, utilizing the repulsive effect between argon ions to bombard the patterned substrate, making the inclined sidewalls positively charged; sputtering negatively charged aluminum atoms that electrostatically adsorb onto the inclined sidewalls to form an aluminum atom thin film; the sputtered aluminum atoms react with at least nitrogen gas to form a first thin film on the gap plane, and the aluminum atom thin film reacts with nitrogen and oxygen gas to form a second thin film on the inclined sidewalls; the first and second thin films constitute a buffer layer. This invention achieves partitioned film formation of a buffer layer on a patterned substrate, where the film elements, proportions, and crystal quality differ and are controllable in different regions, effectively matching the stress and crystal quality during epitaxial growth and reducing defect density.

The embodiment of the utility model provides an epitaxial layer structure of a gallium nitride power device. The epitaxial layer structure comprises a substrate, a high-resistance structural layer, a high-resistance GaN layer, a channel layer and a barrier layer which are sequentially stacked from bottom to top, the high-resistance structural layer comprises a Si-containing material layer and an Al-containing material layer, and the Al-containing material layer is located between the high-resistance GaN and the Si-containing material layer; the constituent elements of the Al-containing material layer comprise Al and N; and the high-resistance GaN layer is a non-doped layer. According to the epitaxial layer structure of the gallium nitride power device, through matching of the Si-containing material layer and the Al-containing material layer, the resistance of the gallium nitride layer is improved, the voltage withstanding characteristic of the gallium nitride device is improved, and meanwhile side effects caused by additional doping are avoided.

The present application discloses a method for preparing a tin-based oxyfluoride compound, comprising the following steps: S1: mixing raw materials SnO, SnF2, TiO2 and Nb2O5, adding ethanol or deionized water, and grinding evenly to obtain a raw material mixture; S2: adding the raw material mixture to a quartz glass tube containing a corundum tube, placing the raw material mixture in the corundum tube, sealing the quartz glass tube, and then placing the sealed quartz glass tube in a muffle furnace at 500-800°C for calcination for 5-10 hours; S3: subjecting the product of step S2 to molten salt treatment to obtain the tin-based oxyfluoride compound. The tin-based oxyfluoride compound material synthesized by the method of the embodiment of the present invention has fewer defects and improved crystallinity, which effectively improves its photocatalytic reaction activity.

The invention provides a preparation method of a tin-doped scaly nano gallium oxide thin film solar blind ultraviolet photoelectric detector. The preparation method comprises the following steps: carrying out cleaning pretreatment on a single crystal GaN substrate; depositing an Au thin film on the pretreated single crystal GaN substrate to serve as a catalyst layer; the preparation method comprises the following steps: mixing Ga2O3, diamond and SnO2 powder according to a certain mass ratio to prepare a precursor; putting the single crystal GaN substrate deposited with the Au thin film and a precursor into a CVD furnace, and growing according to preset gas flow, pressure intensity, reaction temperature and reaction time to obtain a tin-doped scaly nano gallium oxide thin film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide thin film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method. The conductivity of the thin film is improved through tin doping, the specific surface area and light absorption are increased through the scaly nanostructure, high-performance deep ultraviolet photoelectric detection is achieved, and the technical problem that in the prior art, the dark current of a device is high is solved.

This invention provides a light-emitting diode epitaxial wafer and its fabrication method. The light-emitting diode epitaxial wafer includes a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The buffer layer includes a nitrided graphene buffer layer, an h-BN buffer layer, and a B-type GaN layer sequentially deposited on the substrate. x Al 1‑x N buffer layer, AlN buffer layer, wherein, the B x Al 1‑x The boron content in the N-buffer layer gradually decreases along the growth direction of the epitaxial layer. This invention achieves this by sequentially arranging a graphene nitride buffer layer, an h-BN buffer layer, and a boron buffer layer between the substrate and the epitaxial structure. x Al 1‑x N-buffer layers and AlN-buffer layers reduce lattice mismatch between structures, lower defect density, and improve the overall quality of LED epitaxial wafers.

This application relates to the field of two-dimensional semiconductor material preparation technology, specifically to a method for preparing monolayer molybdenum disulfide by dual-sulfur source chemical vapor deposition, comprising the following steps: Step 1, providing a chemical vapor deposition reaction chamber having an upstream region, a growth region, and a downstream region; Step 2, arranging a molybdenum-containing precursor in the growth region, and arranging a substrate above or opposite to the molybdenum-containing precursor; Step 3, arranging a first sulfur-containing precursor in the upstream region and a second sulfur-containing precursor in the downstream region; Step 4, introducing a carrier gas into the reaction chamber and heating it to cause the first sulfur-containing precursor, the second sulfur-containing precursor, and the molybdenum-containing precursor to volatilize and undergo a chemical vapor deposition reaction on the substrate surface to form a monolayer molybdenum disulfide. This invention employs a dual-sulfur source strategy, achieving large-size, uniform, and low-defect preparation of monolayer MoS2, facilitating widespread application.

The invention relates to the technical field of organic synthesis, in particular to a small-molecule electron transport material containing a naphthalimide terminal group and preparation and application thereof.4-bromo-1, 8-naphthalic anhydride is used as a raw material, brominated naphthalimide terminal groups are obtained through imidization, then different conjugated fused ring core units are used as raw materials, and the small-molecule electron transport material containing the naphthalimide terminal group is prepared through a one-step method. And coupling the conjugated fused ring core unit with naphthalimide through a coupling reaction to obtain the small-molecule electron transport material containing the naphthalimide terminal group. By virtue of high electron affinity, strong electron withdrawing property, good thermal stability and morphological stability and relatively strong designability of structure and function of naphthalimide, the micromolecule electron transport material shows excellent electron mobility, tight intermolecular accumulation and good three-dimensional charge transport characteristic; surface / interface defects can be effectively passivated, trap-assisted recombination is inhibited, and the photoelectric conversion efficiency and the stability of the perovskite solar cell are synergistically improved.

The invention discloses a preparation method of an efficient light-emitting silver-indium-sulfur and silver-indium-zinc-sulfur composite nano material, and belongs to the technical field of light-emitting nano materials and preparation. The preparation method comprises the following steps: by taking silver dibutyl dithiocarbamate, indium dibutyl dithiocarbamate and zinc carboxylate as precursors, uniformly mixing at a dodecane neutralization pretreatment temperature to form a mixed solution A; naturally cooling, adding dodecanethiol, and uniformly stirring and mixing to obtain a mixed solution B; at the reaction temperature, decomposing part of silver dibutyldithiocarbamate in the mixed solution B to generate silver sulfide clusters; the activity of the silver sulfide cluster is closely related to the size, the silver sulfide cluster is used as a seed to induce growth of silver-indium-zinc-sulfur, meanwhile, silver sulfide is converted into silver-indium-sulfur, finally, the silver-indium-sulfur and silver-indium-zinc-sulfur composite nano material is obtained, the band gap is 2.0-2.8 eV, the luminous efficiency is 52% or above, and the luminous efficiency can still be kept at 78% or above after five months. The preparation process disclosed by the invention is low in raw material cost and good in process controllability.

The invention discloses a methylamine formamidino perovskite single crystal, a preparation method thereof and an X-ray detector, and belongs to the technical field of perovskite single crystal X-ray detectors. Methyl iodide amine, formamidino hydriodate and lead iodide are used as raw materials, anhydrous acetic acid is used as an additive, growth is carried out in a solvent through a seed crystal method, and the methylamine formamidino perovskite single crystal is obtained. Anhydrous acetic acid and formamidine generate hydrogen-bond interaction, formamidine is pulled to enter crystal lattices, so that phase separation is eliminated, acetate and Pb coordinate to delay formation of a lead-iodine framework, the speed of methylamine and formamidine entering the crystal lattices is balanced, meanwhile, the stability of a methylamine formamidine perovskite precursor solution is improved, stable growth of methylamine formamidine perovskite single crystals is achieved, and the methylamine formamidine perovskite single crystals are obtained. The single crystal has the advantages of high crystallinity, low defect density, large size and favorable X-ray response performance. The methylamine formamidine perovskite single crystal is high in controllability in the growth process, and the preparation method is high in operability, simple and easy to implement, short in preparation period, low in equipment requirement and low in cost.

The invention relates to the technical field of solar cells, in particular to a perovskite thin film and a preparation method and application thereof, the perovskite thin film is prepared by a two-step method, and after a metal halide thin film is prepared, a passivator is pre-spin-coated on the metal halide thin film to obtain a pre-spin coating. The purpose of the pre-spin-coating process is to repair or supplement the metal halide thin film which may be changed or damaged due to heat treatment by covering the metal halide thin film again after annealing, so that the defect density is reduced, and the consistency and quality stability in the perovskite thin film preparation process can be ensured.

This invention provides a wide-bandgap perovskite thin film, a perovskite tandem solar cell, and a method for preparing the same, relating to the field of photovoltaic technology. The method for preparing the perovskite thin film includes: adding a perovskite structural material and an organic additive to an organic solvent to obtain a perovskite precursor solution; spin-coating the perovskite precursor solution onto a substrate; and annealing the substrate to obtain the perovskite thin film. The organic additive includes a material containing a thiophene dioxide framework. The organic additive used in this invention can effectively regulate the crystallization rate of mixed halides, delay crystallization, enhance the uniform distribution of the mixed halide phase, reduce the defect density in the wide-bandgap perovskite thin film, and significantly improve the power conversion efficiency and stability of the solar cell, thereby obtaining a high-performance tandem solar cell.

The application discloses an oxide semiconductor thin film transistor and a preparation method thereof. The oxide semiconductor thin film transistor comprises a substrate, a gate electrode on the substrate, a gate dielectric layer on the gate electrode, an effective induction layer, the effective induction layer comprising a channel layer a, a channel layer b and a channel particle layer arranged from bottom to top, the channel layer a being on the gate dielectric layer, an induction layer on the channel particle layer, and a source electrode and a drain electrode arranged on the gate dielectric layer and the effective induction layer. The oxide semiconductor thin film transistor has high mobility and stability.

The invention relates to an application of a pyrimidine-based additive in a perovskite solar cell. A pyrimidine derivative with moderate Lewis alkalinity is selected as the additive and forms a moderate and stable coordination intermediate with a lead iodide precursor, so that nucleation of alpha-phase formamidine lead iodide can be accelerated and defect generation can be inhibited; the method is suitable for planar formal and trans-structure devices, the photoelectric conversion efficiency of 25% or above is achieved in the formal structure and the trans-structure, and excellent stability is kept under the long-time operation and storage conditions. The invention provides an additive design principle based on pyrimidine molecules, and provides a theoretical basis and a technical path for development of high-performance and long-life perovskite photovoltaic devices.

The application discloses a kind of perovskite laminated solar cell and preparation method thereof, photovoltaic module and photovoltaic device, belong to solar cell technical field.The perovskite laminated solar cell from light-receiving front to light-receiving back successively includes substrate, bottom electrode, first hole transport layer, wide band gap perovskite layer, first electron transport layer, barrier layer, intermediate interconnection layer, narrow band gap perovskite layer, second electron transport layer, hole blocking layer, top electrode;The intermediate interconnection layer includes first sublayer, self-assembled monolayer and second sublayer, first sublayer faces first electron transport layer, second sublayer faces narrow band gap perovskite layer, and self-assembled monolayer is located between first sublayer and second sublayer.The application can inhibit interface scattering and reduce wide-angle reflection loss under oblique incidence, while maintaining excellent electrical transmission to promote carrier transfer and recombination, significantly improve the overall photovoltaic performance of device.

This invention belongs to the field of solar cell technology, specifically relating to a top-down defect passivation perovskite solar cell. It includes, from bottom to top, a transparent conductive substrate, an electron transport layer, a first passivator layer, a perovskite layer, a second passivator layer, a hole transport layer, and a back electrode. The perovskite layer has an inverse opal structure, comprising perovskite and spherical pores. Several layers of spherical pores are arranged sequentially from top to bottom within the perovskite layer, with several pores per layer. This invention utilizes the three-dimensional continuous through-holes of the inverse opal perovskite structure to promote the penetration of the passivator to the buried interface, thereby achieving overall defect passivation of the perovskite bulk phase and the perovskite / carrier transport layer interface. Furthermore, the slow-light effect of the inverse opal structure helps to prolong the interaction time between incident light and the perovskite, enhancing light absorption performance. Ultimately, a perovskite solar cell with high photoelectric conversion efficiency and good long-term stability is obtained.

This invention relates to the field of nanomaterial preparation and polycrystalline thin film preparation technology, specifically providing a method for controlling the orientation of polycrystalline thin films using antisolvents. This aims to solve the problems of existing preparation methods, such as cumbersome implementation, incompatibility with industrial production, and potential negative impacts on the integrity of the polycrystalline thin film. To this end, the method for controlling the orientation of polycrystalline thin films using antisolvents includes: coating a pre-prepared precursor solution onto a substrate; coating an antisolvent corresponding to a specific target orientation onto the substrate containing the precursor solution; and subjecting the coated substrate containing the precursor solution and antisolvent to low-temperature annealing to obtain a polycrystalline thin film with the specific target orientation. The annealing time is negatively correlated with the annealing temperature. The polycrystalline thin films prepared by the method of this invention exhibit high orientation consistency, low defect density, high carrier mobility, and a more compact and flat film morphology.