430 results about "Copper substrate" patented technology

The invention belongs to the field of module parasitic parameter reduction, and discloses a multi-loop decoupling-based low electromagnetic parasitic parameter SiC power semiconductor module, which is characterized in that an independent copper substrate is adopted as an alternating current copper layer to be laminated on a DBC (Direct Bond Copper) ceramic substrate, and a lower tube chip is flipped and then welded on the lower DBC substrate which is disconnected from a radiator; an upper tube chip and a lower tube chip are connected with a copper substrate above through a copper-molybdenum-copper cushion block, and an alternating current output end of the module is suspended above the DBC substrate through the chips and the cushion block. According to the invention, parasitic capacitance of the module AC output end to the grounding radiator can be almost completely eliminated, power-heat transfer loop capacitive decoupling is realized, common-mode current of a SiC device under high-speed switching is significantly reduced, and electromagnetic interference of a high-frequency switching circuit to a driving circuit and a control system is effectively reduced. And meanwhile, the parasitic inductance of the module is remarkably reduced, and orthogonal decoupling of a signal-power loop magnetic flux space is realized.

The invention provides a preparation method of a copper-clad substrate and the copper-clad substrate. The preparation method comprises the following steps: providing a copper-clad substrate for forming an inner-layer core plate; the copper-clad substrate comprises a copper-clad plate base material and a copper foil arranged on the surface of the copper-clad plate base material; executing an interface modification process on the surface of the copper foil; forming a dry film photoetching film on the surface of the copper foil after interface modification; performing exposure and development processing on the dry film photoetching film to form a dry film photoetching film with a circuit pattern; and the dry film photoetching film is used as a mask to execute an etching process so as to form a circuit pattern on the copper-clad substrate, so that the technical effect of improving the wiring precision is realized.

The invention relates to the technical field of superconducting material processing, in particular to a preparation method of an Nb3Sn superconducting wire. The method mainly comprises the steps that Nb-Zr alloy is loaded into the exterior and / or the center of a Sn-Cu single-core rod, oxide powder is filled between the Nb-Zr alloy and the Sn-Cu single-core rod, then the Sn-Cu single-core rod and the Nb-Zr alloy are loaded into a copper substrate, and Nb3Sn subcomponents are obtained after multi-pass stretching, forming and fixed-length cutting; and uniformly arranging the Nb3Sn sub-components in the copper pipe along the circumferential direction to form a bundle, and after multi-pass stretching, carrying out heat treatment and cutting to obtain the Nb3Sn superconducting wire. By introducing the artificial point pinning array in density gradient distribution, the critical current density of the Nb3Sn superconducting wire in a high magnetic field of 8T-16T is enhanced, the problems that an existing uniform artificial point pinning center scheme generates a matching effect and limits the actual application of the superconducting wire are solved, and the decline degree of the critical current density of the Nb3Sn superconducting wire in the high field is relieved.

The invention relates to a method for constructing a composite super-hydrophobic coating through double bonding. The preparation method comprises the following steps: taking a clean copper sheet which is not pretreated as a substrate, dipping the copper sheet in a suspension consisting of nanoparticles and sulfydryl-containing siloxane ethanol, taking out, washing, drying, dipping in a perfluoromercaptan ethanol solution, taking out, washing, and drying to obtain the copper-based super-hydrophobic surface coating. The coating prepared by the method has excellent super-hydrophobicity, icing resistance and stability. Different from an existing conventional preparation method, the method has the advantages that pretreatment operation such as abrasive paper polishing, strong acid etching or anodic oxidation does not need to be carried out on a copper sheet, and micro-nano roughening and low-surface-energy self-assembly can be completed on the copper surface only through two-step normal-temperature dipping. The method is simple in preparation process, mild in condition, free of expensive equipment, thin in coating thickness and small in influence on electric conduction and heat conduction of the copper substrate, intrinsic performance of copper can be reserved, the electric conduction / heat conduction characteristic of the copper substrate is considered, and the method has wide application value and prospects.

The invention discloses a composite two-phase flow micro-channel radiator for high-density heat flow, and belongs to the technical field of heat dissipation, the composite two-phase flow micro-channel radiator for high-density heat flow comprises a vapor chamber for heat transfer, a manifold copper substrate is arranged on the vapor chamber, a diversion trench is formed in the bottom surface of the manifold copper substrate, a liquid inlet is formed in one side surface of the manifold copper substrate, and the liquid inlet is communicated with the diversion trench; a flow guide groove is formed in one side face of the manifold copper substrate, a liquid outlet is formed in the other side face of the manifold copper substrate and communicated with the flow guide groove, protruding strips are arranged on the temperature equalizing plate and arranged in the flow guide groove, a liquid conveying groove is formed between every two adjacent protruding strips, a first cavity is formed in the temperature equalizing plate, a second cavity is formed in each protruding strip, and the first cavity is communicated with the second cavity. The heat dissipation device has the advantages that heat rapidly increased in unit area of equipment can be timely and effectively dissipated, and the overall heat dissipation efficiency and the heat dissipation effect are improved.

The invention provides a packaging structure and a packaging method for improving the heat dissipation performance of an IGBT power module. The packaging structure comprises a copper substrate, a first epoxy glue layer, an epoxy resin-based composite material layer, a second epoxy glue layer, an upper bridge copper layer, a lower bridge copper layer, a chip solder layer and a power chip which are sequentially arranged from bottom to top, wherein the upper bridge copper layer and the lower bridge copper layer are integrally arranged; the power chip comprises an upper bridge chip and a lower bridge chip; the chip solder layer comprises an upper bridge chip solder layer and a lower bridge chip solder layer; the upper bridge chip solder layer is arranged on the upper bridge copper layer, and the upper bridge chip is arranged on the upper bridge chip solder layer; the lower bridge chip solder layer is arranged on the lower bridge copper layer, and the lower bridge chip is arranged on the lower bridge chip solder layer. According to the packaging structure, the epoxy resin-based composite material layer is adopted as the insulating layer, copper and a welding layer are reduced in heat flow transmission, the heat resistance from the chip to the shell is reduced, and the heat dissipation performance is improved; the copper layers of the upper and lower bridge arms are integrated, leads between the upper and lower bridges are reduced, the power loss of the IGBT is reduced, and the heat is reduced.

The invention belongs to the technical field of electro-catalysis carbon dioxide reduction, and particularly relates to a three-dimensional porous copper oxide-zinc bimetallic film electrode for electro-reduction of carbon dioxide and preparation and application of the three-dimensional porous copper oxide-zinc bimetallic film electrode. The preparation method comprises the following steps: firstly, carrying out surface pretreatment on a copper substrate, then carrying out pulse current electrodeposition and dynamic etching on the surface of an electrode in a mixed electrolyte containing zinc salt, copper salt and sodium salt, and finally, carrying out constant current structure reconstruction on the electrode by adopting a long-time reduction method to prepare the three-dimensional porous copper oxide-zinc bimetallic film electrode. The electrode has a unique nano pore channel structure, rapid transfer of interface charges is promoted, and the electrode has rich active sites due to the synergistic effect of a heterostructure. The preparation method has the dynamic regulation and control advantage of pulse deposition and the structural stability of constant-current deposition, a template agent does not need to be added in the preparation process, and the process controllability is high. The obtained electrode shows excellent CO product selectivity, activity and stability in an electro-catalysis carbon dioxide reduction reaction.

The invention is suitable for the technical field of heat pipe experiment systems, and provides a heat pipe experiment system and method based on visual visualization and dual-seal temperature control, and the system comprises a visual heat pipe, a temperature adjustment module, a data collection module, a liquid injection module and a glass temperature monitoring feedback module. The visual heat pipe adopts an aluminum alloy cover plate, visual glass and a copper substrate to form a double-sealing structure. The system integrates a glass temperature monitoring and feedback mechanism, prevents the observation window from fogging, prevents the temperature of the observation window from being too high, and guarantees high-definition visual observation. And the data acquisition module synchronously records the thermal parameters and the dynamic image of the condensed liquid drop, and quantitatively analyzes the behavior of the liquid drop through an image processing technology. The system can realize high-definition observation, high-precision temperature control and quantitative analysis of the internal condensation process of the flat heat pipe at different inclination angles and under different working conditions, and is suitable for in-depth research of a phase-change heat exchange mechanism and heat pipe performance.

The invention relates to the technical field of composite metal materials, in particular to a silver-coated graphene copper composite material and a preparation method thereof, and aims at solving the problems that traditional silver-coated copper powder is high in silver consumption, copper is oxidized due to the fact that a silver layer is prone to being damaged, and conductivity is insufficient. The method comprises the steps that a graphene coating layer is formed on a copper powder substrate in situ through chemical vapor deposition, and graphene copper powder is obtained; performing etching treatment on the graphene copper powder to controllably expose part of the copper substrate so as to form anchoring points for silver ion deposition; carrying out reduction treatment on the etched graphene copper powder so as to ensure that an anchoring site has chemical activity; in a reductive liquid phase environment, enabling a chemical silver plating solution to react with the graphene copper powder subjected to reduction treatment, and guiding silver ion deposition by utilizing an anchoring point, so as to form a silver coating layer on the surface of the graphene coating layer; and separating and drying the reacted system to obtain the silver-coated graphene copper composite material. The material is better in oxidation resistance and conductivity, and the process is free of waste liquid.

The invention relates to the technical field of copper substrate feeding equipment, in particular to a multilayer thermoelectric separation copper substrate production processing feeding device which comprises a feeding table, a supporting frame fixed to the top end of the feeding table and a storage table fixed to the top end of the supporting frame. A suction cup mechanical arm is fixedly installed on one side of the top end of the conveyor, a containing base is arranged in the bottom end of the storage table, and two disassembling assemblies are arranged on the side edge of the storage table, so that when the multi-layer thermoelectric separation copper substrate producing, machining and feeding device is used, the multiple layers of thermoelectric separation copper substrates are separated; the multiple copper substrates stacked at the top end of the containing base can be sequentially limited, lifted and separated, so that oil film adhesion is effectively broken, each multi-layer thermoelectric separation copper substrate is independently placed in a suspended mode, subsequent precise adsorption of a suction cup mechanical arm is facilitated, feeding faults are solved, the situation that two or more copper substrates are fed at a time is avoided, and the production efficiency is improved. And therefore, the overall feeding stability and the production efficiency are improved.

The invention provides a multi-channel high-precision resistance temperature coefficient test system and method, and the system comprises a vacuum system module which is used for a vacuum test environment, a temperature control heating module which is a heating device with programmable temperature control, and a multi-channel test module which comprises a resistance tester, a multi-channel acquisition card and a connection interface, the multi-channel acquisition card is connected with the resistance tester through an interface, the multi-channel acquisition card is connected with the aviation plug through a test line, the aviation plug is detachably connected with a sample to be tested through the test line, and the temperature monitoring module adopts a thermocouple to test temperature. The data acquisition terminal records and processes multichannel resistance values and corresponding temperature data in real time, the sample table module is used for placing multichannel test samples and is placed in the temperature control heating module, and a sample table adopts an aluminum-based PCB (printed circuit board) or a copper-based PCB subjected to aluminum nitride ceramic or insulation treatment and can bear at least two test samples at the same time.

A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.

The invention discloses a double-frequency constant-temperature crystal oscillator and a manufacturing method thereof, and relates to the technical field of crystal oscillators, and the double-frequency constant-temperature crystal oscillator comprises a ceramic base and a ceramic bottom plate which are integrally formed by adopting an LTCC (Low Temperature Co-Fired Ceramic) process; the high-frequency quartz crystal and the low-frequency quartz crystal are respectively arranged in independent closed cavities, and unified heating and accurate temperature control are realized through the high-heat-conduction diamond copper substrate, the metalized heat conduction holes and the partitioned temperature sensing chips; the two paths of signals are output through independent interconnection paths, and the crosstalk is lower than-50dBm. According to the invention, the dual-frequency high-stability low-noise output is realized under the similar volume, and the requirements of a flight control system on a high-integration-level and high-reliability frequency source are met.

The invention discloses three-layer porous graphene and a preparation method thereof, and belongs to the field of nano materials. The preparation method of the three-layer porous graphene comprises the following steps: growing graphene on a copper substrate by adopting a chemical vapor deposition method to obtain the three-layer porous graphene, wherein hydrogen, shielding gas, methane and oxygen-containing gas or pure oxygen are introduced in the chemical vapor deposition process; the growth temperature of the chemical vapor deposition enables the copper substrate to be molten into a liquid state. Compared with the traditional method, the method provided by the invention does not need complex manpower and material resources, does not need special treatment on the substrate, and provides a method capable of realizing more efficient growth of the three-layer porous single crystal graphene.

The invention discloses an accelerator neutron source solid-state lithium target cooling device, and relates to the technical field of accelerator neutron source medical application. An annular heat pipe is arranged on the outer ring of the side portion of an oxygen-free copper substrate, a plurality of liquid absorption cores are arranged on the inner wall of the heat pipe, and meanwhile an inner cavity of the heat pipe is filled with a working medium; when heat is generated, the heat is firstly transferred to the oxygen-free copper substrate, the evaporation section of the heat pipe is heated, the working medium in the wick is quickly evaporated and gasified, the generated steam flows to the condensation section under the driving of differential pressure and is condensed into liquid in the condensation section and releases heat, and the liquid generated by condensation returns to the evaporation section again under the capillary action of the wick. The space of the arranged heat pipe is large, and in the aspect of heat dissipation, the working medium is subjected to gas-liquid phase change in the heat pipe under the action of the liquid absorption core, so that the accelerator is rapidly dissipated, heat on the solid target material film can be rapidly taken away, and the cooling effect on the accelerator is greatly improved.

This invention discloses a conveniently detachable, actively water-cooled solid-state deuterium target based on a compact neutron source, comprising a micron-sized solid titanium film, a titanium film carrier, and a water-cooled substrate. Deuterium is deposited in the solid titanium film by bombarding it with a deuterium ion beam, and neutrons are generated by collisions with the subsequent deuterium ion beam. Oxygen-free copper, with its high thermal conductivity, is used as the carrier for the titanium film. The threaded structure on the side of the titanium film carrier allows for convenient installation and removal from the water-cooled substrate. The oxygen-free copper substrate, with multiple annular water-cooling structures inside, enables rapid and effective removal of heat flux from the target, preventing deuterium particles deposited in the solid titanium film from desorbing due to excessive temperature, thus avoiding impact on neutron yield. This invention provides a conveniently detachable, actively water-cooled solid-state deuterium target suitable for compact deuterium-deuterium neutron generators, providing a sound technical foundation for the widespread application of compact accelerator neutron source systems in production and daily life.

This utility model relates to an ultra-thin rolled copper stamped fuse assembly. The fuse assembly includes a sheet copper substrate made of rolled copper with a thickness in the micrometer range, a first PI thermosetting film and a second PI thermosetting film respectively covering the upper and lower surfaces of the sheet copper substrate; the sheet copper substrate has a wavy fuse portion with a line width of 0.15±0.02mm. This utility model uses a high-precision die-cutting method to punch the ultra-thin rolled copper foil, directly forming a fuse semi-finished product. In particular, the extremely fine fuse portion is punched in one step, avoiding defects such as edge deformation caused by multiple punchings, ensuring stable dimensions and performance of the fuse portion. High-speed rotary die-cutting is then used for efficient and precise production, encapsulating the fuse portion within the film material, exposing the opening area and end area for electrical connection, improving production efficiency and subsequent use efficiency. The overall production efficiency can be increased to 5000pcs / H, and the yield rate to approximately 95%.

The application discloses a packaging structure with a selective copper-coated and chip-integrated unit and a preparation method thereof, and relates to the technical field of electronic packaging. The preparation method comprises the following steps: patterning a ceramic substrate, and attaching a first green body layer and a second green body layer to the surface of a first metallized layer of the patterning ceramic substrate and the surface of a heat dissipation plate, respectively; the first green body layer and the second green body layer are composed of solid-state diffusible metal particles, the conductive circuit area is stacked with a copper sheet through the first green body layer, the chip attaching area is stacked with a chip through the first green body layer, and bagging, sealing and sintering are performed. The four process steps of patterning a ceramic substrate, attaching a chip, copper-coating a conductive circuit and integrating a substrate and a heat dissipation plate are integrated into a one-time pressure sintering process, integrated packaging is realized, the packaging process is simplified, the production efficiency is improved, the thermal stress control is excellent, and the device performance and reliability are improved.

This invention provides a battery. The battery includes a negative electrode sheet, which includes a negative electrode current collector and a negative electrode active material layer disposed on at least one surface of the negative electrode current collector. The negative electrode active material layer includes a first negative electrode active material layer and a second negative electrode active material layer, with the first negative electrode active material layer located between the negative electrode current collector and the second negative electrode active material layer. The first negative electrode active material layer includes a carbon-based active material, and the second negative electrode active material layer includes a silicon-based active material. The particle size Dv90 of the silicon-based active material is smaller than the thickness Bμm of the first negative electrode active material layer. The negative electrode current collector includes a copper substrate and a protective layer disposed on at least one surface of the copper substrate. The thickness Anm of the protective layer satisfies: 20≤A≤100. The negative electrode sheet satisfies: 0.5≤A / B≤6. The battery provided by this invention has a low interface resistance of the negative electrode sheet, a low degree of copper deposition, good structural stability of the negative electrode current collector, and high cycle performance.

The application discloses a copper-bismuth bimetallic catalyst and a preparation method and application thereof. The copper-bismuth bimetallic catalyst comprises a copper substrate and copper-bismuth nanowires grown on the copper substrate, the copper-bismuth nanowires comprise copper nanowires and a metal bismuth layer loaded on the copper nanowires, and the mass fraction of bismuth in the copper-bismuth nanowires is 40% to 60%. The preparation method of the catalyst comprises the following steps: after in-situ growth of copper hydroxide nanowires on the copper substrate, the copper-bismuth bimetallic catalyst is prepared through heat treatment, electrochemical reduction treatment and bismuth deposition. Meanwhile, the copper-bismuth bimetallic catalyst can not only make full use of the copper and bismuth bimetallic effect, effectively improve the activity, stability and selectivity of electrocatalytic reduction of carbon dioxide, but also has the advantages of simple and controllable preparation, wide application potential window and wide application environment.

The LED flashlight comprises a base and a connecting pipe, a containing space is arranged in the connecting pipe, a copper substrate is fixedly connected in the containing space, an LED light source is fixedly arranged on the copper substrate and connected in an electric control mode, a light source adjusting structure is arranged in front of the copper substrate, and the light source adjusting structure is connected with the copper substrate in an electric control mode. The lower end of the copper substrate is fixedly connected with a supporting plate. According to the LED flashlight capable of adjusting and switching the high beam and the low beam, the convex lens and the concave lens are arranged in front of the light source, the concave lens is transversely arranged in a normal state, light only irradiates the convex lens to form the low beam, the concave lens is driven by the air cylinder to overturn by 90 degrees to be overlapped with the convex lens, the light is gathered after passing through the convex lens and the concave lens, and at the moment, the light is the high beam; two groups of optical pieces are not needed, and the structure is simple while the cost is saved.

The invention relates to the technical field of circuit board manufacturing, in particular to a composite target manufacturing method which comprises the steps that a composite target circuit pattern needing to be etched on the inner-layer circuit surface in a copper substrate is obtained, the inner-layer circuit surface comprises an upper-layer circuit surface and a lower-layer circuit surface, copper at the position corresponding to a hole site is etched off on the upper-layer circuit surface, and the lower-layer circuit surface is etched off on the lower-layer circuit surface; on the surface of the lower layer circuit, copper at the corresponding position of the composite target is etched, a plurality of inner layer boards to be laminated are laminated on the surface of the etched inner layer circuit after being laminated in sequence to form a multi-layer circuit board, and the position information of the composite target on the plurality of multi-layer circuit boards is obtained through a target drilling machine, the composite target on the multilayer circuit board comprises an alignment center and an alignment target point. Therefore, according to the composite target obtained through manufacturing, the position alignment of the drilling hole and the laser hole can be considered at the same time, the alignment degree of the line and the two different hole primitives is guaranteed to the maximum degree, and therefore the alignment precision of the graph is improved.

The invention belongs to the technical field of red copper cold forging dies, and particularly discloses a red copper IGBT heat dissipation substrate cold forging die which comprises a lower die plate and an upper die plate, the upper die plate is located above the lower die plate, an upper die assembly is arranged at the bottom of the upper die plate, a lower die assembly is arranged at the top of the lower die plate, and a floating type structure is arranged at the top of the lower die assembly. A red copper substrate is placed in a groove formed between the top of a lower die pressure block and a lower die inner plate and between the top of a material returning block and the top of the lower die inner plate, in the process that an upper die assembly is pressed downwards and is combined with a lower die assembly, a floating structure can be driven to integrally descend, meanwhile, a belleville spring is compressed, and in the process that the floating structure integrally descends, the belleville spring is pressed. And the lower die pressure block and the material returning block which are located in the middle of the floating type structure are kept static, so that an extrusion cavity is formed in a groove formed between the top of the lower die pressure block and the top of the material returning block and the top of the lower die inner plate in the descending process of the floating type structure to extrude the red copper substrate.

The utility model provides a cold plate of the base structure of the even temperature plate for high -power consumption chip heat dissipation, including cold plate lower cover, cold plate spade tooth bottom board and cold plate upper cover, wherein, cold plate lower cover is opposite with high -power consumption chip, cold plate lower cover is away from high -power consumption chip one end with cold plate spade tooth bottom board fixed connection, cold plate spade tooth bottom board is away from cold plate lower cover one end with cold plate upper cover fixed connection, and cold plate spade tooth bottom board is equipped with cold plate spade tooth fin, the utility model discloses a cold plate of the base structure of the even temperature plate for high -power consumption chip heat dissipation, utilizes the base structure of even temperature plate to replace pure copper base plate and is more applicable to high -power consumption high heat flux density's chip to high -power consumption chip surface even temperature nature is better, in addition directly takes cold plate spade tooth bottom board as even temperature plate upper cover, has saved traditional even temperature plate upper cover and the thermal resistance of soldering tin cream, has reduced the thermal resistance of whole heat transfer path, has improved heat transfer efficiency.

The invention discloses a high-density large-current LED (light-emitting diode) module based on an improved copper substrate circuit, which is characterized in that a traditional single'lane 'is widened into a plurality of'lanes' by additionally arranging a third bonding pad which is not electrically connected with an anode and a cathode at the bottom of a lamp bead and an auxiliary current path which is arranged on a copper substrate and corresponds to the third bonding pad; a low-resistance path is provided for current, and the current capacity, the packaging density, the heat dissipation performance and the welding yield are remarkably improved. Meanwhile, the adjacent welding bosses belonging to the same electrical network are connected through one or more solder paste flowing channels. The solder paste flowing channel is an exposed copper foil channel formed after etching. In the reflow soldering process, molten soldering tin can flow in the boss and the channel system which are communicated with each other to automatically compensate the tin quantity difference on each bonding pad, so that the uniformity of the welding height is realized, and the defects of tombstone standing, deviation, pseudo soldering and the like are effectively prevented.

The utility model discloses an efficient grinding device for a ceramic copper-clad substrate. The efficient grinding device comprises a workbench, and a containing table is fixedly installed in the middle of the surface of the workbench. The placing table is used for bearing the ceramic copper-clad substrate; polishing devices are arranged on the surface of the workbench and located on the two sides of the containing table in the first direction correspondingly, and a moving assembly is arranged on the workbench and used for driving the two polishing devices to get close to each other or get away from each other. Positioning assemblies are arranged on the surface of the workbench and located on the two sides, in the second direction, of the containing table correspondingly. The two positioning assemblies are used in cooperation and used for clamping and fixing the ceramic copper-clad substrate. The second direction is perpendicular to the first direction, and the positioning assembly is arranged, so that the two sides, which are not polished, of the copper-clad plate can be positioned and extruded, the stability of the copper-clad plate can be ensured, and the copper-clad plate cannot move when the polishing assembly polishes the two sides of the copper-clad plate.

The application discloses a preparation method of an alumina copper-clad plate with reduced black spots, and belongs to the field of advanced ceramic preparation. The alumina copper-clad plate is obtained through a direct copper-cladding sintering method and black spot removal. The black spot proportion of the alumina copper-clad plate is less than 1%, and the bending strength reduction proportion is 0, so that the product yield is greatly improved, and the overall manufacturing cost is reduced.

The invention belongs to the technical field of printed circuit board materials, and discloses a heat-resistant high-toughness PCB and a preparation method thereof. The preparation method comprises the following steps: carrying out hydrosilylation polymerization reaction on epoxy-terminated polybutadiene and polymethylhydrosiloxane in the presence of a catalyst and an organic solvent to obtain a polysiloxane modified epoxy-terminated polybutadiene solution, then uniformly mixing the polysiloxane modified epoxy-terminated polybutadiene solution with epoxy resin, an amino silsesquioxane curing agent and an inorganic filler, and carrying out extrusion molding to obtain the epoxy-terminated polybutadiene modified epoxy resin. A modified epoxy resin glue solution is obtained; the obtained modified epoxy resin glue solution is adopted to conduct glue dipping treatment on a non-conductive base material, then single-face or double-face copper foil coating is conducted, hot pressing curing is conducted, and a copper-coated base plate is obtained; and then cutting, drilling, copper deposition, etching and surface treatment are carried out to obtain the heat-resistant high-toughness PCB. The epoxy resin is modified by polysiloxane modified epoxy-terminated polybutadiene, so that the heat resistance and toughness of the obtained copper-clad substrate and PCB can be remarkably improved, and relatively high adhesive property can be kept.

The invention discloses a manufacturing method, particularly discloses a manufacturing method for a high-thermal-conductivity silicon nitride copper-clad substrate, and belongs to the technical field of design and manufacturing of ceramic electronic devices. The invention provides the manufacturing method for the high-thermal-conductivity silicon nitride copper-clad substrate, which can be used for effectively manufacturing a precise circuit on the ceramic substrate bonded with the copper foil. The manufacturing method comprises a ceramic bottom plate, and comprises the following steps: firstly, compounding a layer of high-strength copper foil metal bottom layer on two side surfaces of the ceramic bottom plate by adopting a copper brazing process, and then carrying out graphical processing on the high-strength copper foil metal bottom layer by adopting a photoetching process to at least partially remove the high-strength copper foil metal bottom layer except a graph, and thickening a dam layer on the high-strength copper foil metal bottom layer obtained by photoetching by adopting an electroplating process, and finally, removing the manufacturability brazing material layer and / or the manufacturability electroplating conductive layer outside the pattern by adopting an etching process to obtain the high-thermal-conductivity silicon nitride copper-clad substrate with the pattern meeting the requirement.

The copper base substrate of the present invention is a copper base substrate in which a copper substrate, an insulating layer, and a circuit layer are sequentially stacked, the ratio of the thickness (unit: μm) of the insulating layer to the elastic modulus (unit: GPa) of the insulating layer at 100°C is 50 or more, and the elastic modulus of the circuit layer at 100°C is 100 GPa or less.