Barrier Film For Flexible Copper Substrate And Sputtering Target For Forming Barrier Film

a barrier film and copper substrate technology, applied in the direction of vacuum evaporation coating, transportation and packaging, chemical coating, etc., can solve the problems of short circuit in the wiring on the circuit board, ineffectiveness, and barrier film peeling from the polyimide film, so as to prevent film peeling and achieve sufficient barrier
US20070209547A1Inactive Publication Date: 2007-09-13JX NIPPON MINING& METALS CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
JX NIPPON MINING& METALS CORP
Publication Date
2007-09-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

Provided are a barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co, having a film thickness of 3 to 150 nm, and film thickness uniformity of 10% or less at 1σ; and a sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co, wherein the relative magnetic permeability in the in-plane direction of the sputtered face is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling in inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch, and have barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.
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Description

TECHNICAL FIELD

[0001] The present invention relates to a barrier film for a flexible copper substrate and a sputtering target for forming such barrier film capable of effectively inhibiting the diffusion of copper to a resin film such as polyimide. BACKGROUND ART

[0002] Conventionally, a copper layer is formed on a resin film such as polyimide, which is to become the base film, upon manufacturing a flexible copper substrate, Specifically, a copper seed layer is formed on the polyimide film by sputtering or electroless deposition, and a thick copper plated layer is formed thereon. Thereafter, the copper is subject to etching so as to form a copper circuit pattern.

[0003] The problem here is that the copper formed on the polyimide film easily diffuses (migrates) in the polyimide film, and causes a short circuit in the wiring on the circuit board.

[0004] In order to inhibit this kind of diffusion of Cu to the polyimide film, proposed is a method of forming in advance a barrier layer f...

Claims

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