1883results about "Ion implantation coating" patented technology

A rotatable drum is provided for supporting a substrate. The rotatable drum includes a curved drum surface for supporting the substrate. The curved drum surface includes a dielectric portion and an electrode coupled to a power source. The electrode is electrically coupled to the curved drum surface and capable of chucking and dechucking the substrate from the curved drum surface at one or more circumferential segments of the curved drum surface.

The invention relates to a method for fabricating a two-dimensional (2D) heterostructure comprising depositing graphene on a substrate in an ultrahigh vacuum (UHV) chamber at a first temperature and a first chamber pressure to form sub-monolayer graphene on the substrate; and subsequently depositing borophene onto the sub-monolayer graphene on the substrate in the UHV chamber at a second temperature and a second chamber pressure so as to couple the borophene with the graphene on the substrate to form a 2D borophene-graphene heterostructure comprising lateral and / or vertical heterostructures.

The present application relates to the technical field of target material, in particular to a preparation method of high-density tin-zinc-zirconium oxide target material. The preparation method comprises the following steps: preparing tin oxide powder, zirconium oxide powder and zinc oxide powder into a mixed slurry, and then performing sand milling, granulation, molding, sintering to obtain the high-density tin-zinc-zirconium oxide target material, wherein the mass ratio of the tin oxide powder, the zirconium oxide powder and the zinc oxide powder is 100:0.1-0.5:9-11. The high-density tin-zinc-zirconium oxide target material prepared by the preparation method has high relative density and low resistivity, and the sputtered film thereof has high transmittance in the visible light range, can replace the traditional indium tin oxide target material, and can be widely applied in the fields of semiconductor integrated circuits, LEDs, displays, touch screens, solar photovoltaics and chemical industry.

The present application provides a mask manufacturing method, a mask manufactured thereby, and a display device manufacturing method. The mask manufacturing method includes the steps of forming an organic substance layer on a mask substrate, patterning a hard mask on the organic substance layer, etching the organic substance layer to form a mask piece including a through hole, removing the hard mask disposed on the mask piece, forming a conductive substance layer on the mask piece, and etching the conductive substance layer to form a conductive layer.

The application discloses a deposition device based on a programmable electrode array and a patterning deposition method, which comprises the following steps: generating charged particles and / or mist droplets by a charged particle source; an insulating substrate comprises a front surface for receiving deposition and a back surface opposite to the front surface; a programmable electrode array is arranged on the back surface of the insulating substrate and used for guiding the deposition of the charged particles and / or the mist droplets; a voltage driving unit is used for providing independent voltage signals for the electrode unit, and the voltage signals are pulse signals or direct current signals; and a control unit is used for programming and controlling the output of the voltage driving unit according to a target pattern, so that the programmable electrode array forms a spatial electric field corresponding to the target pattern on the front surface of the insulating substrate. Through the deposition device based on the programmable electrode array and the patterning deposition method, any pattern can be generated and changed instantly through programming of an electric field, and a physical mask is replaced by an electric mask, so that the physical mask is not needed, and the flexibility is extremely high.

The method for producing an oxide sintered body according to the present invention uses, as a raw material, an oxide including two or more elements selected from In, Ga, and Zn, the method satisfying (a) to (c). (a) An oxide having a purity of 6N or more is used as the raw material. (b) The medium for pulverization and mixing is formed from an oxide including no element other than the elements selected as the raw material. (c) Slurry is obtained by using ultrapure water as a dispersion medium.

This invention relates to a pre-fabricated tritium target based on a polycrystalline film and its manufacturing method, belonging to the field of plasma technology. The pre-fabricated tritium target includes an oxygen-free copper target substrate, a first zirconium film, a high-entropy ceramic tritium-blocking layer, and a second zirconium film sequentially deposited on its surface. The manufacturing method includes: pre-treating the oxygen-free copper target substrate; sequentially depositing multiple layers of films using a magnetron sputtering process to form a polycrystalline film layer; purging the oxygen-free copper target substrate with the polycrystalline film layer with tritium; and bonding the oxygen-free copper target substrate to an oxygen-free copper target holder. The pre-fabricated tritium target based on a polycrystalline film of this invention solves the problem of balancing heat dissipation and tritium blocking performance in traditional processes, achieving a balance between heat dissipation and tritium blocking capabilities. This allows the prepared pre-fabricated tritium target to be reused, improving the utilization rate of the pre-fabricated tritium target and reducing the cost of using neutron tubes.

The application discloses a cutter and a preparation method, and relates to the technical field of drilling cutters.The application combines an ultrafine nanocrystalline cemented carbide base body with a functionally gradient composite coating, the bottom layer made of CrAlN material in the composite coating is firmly combined with the tungsten carbide cutter base body, the top layer made of TiSiCN has hardness and lubricity, cutting force and cutting heat are reduced, the intermediate layer made of AlCrSiN material provides core ultra-high hardness and thermal stability, the long service life of the cutter is ensured, a transition layer with gradient change in silicon content is further arranged between the bottom layer and the intermediate layer, stress between the bottom layer and the intermediate layer can be effectively buffered, the base body toughness, coating bonding strength, overall wear resistance and surface lubricity of the cutting cutter, especially the drill bit, are comprehensively improved, and the application has extremely high market value.

This film formation device comprises: a measurement means that optically measures a film thickness by emitting light onto a film which is has been formed on a substrate; and a substrate holding means that holds the substrate during the measurement by the measurement means, wherein, on the surface of the substrate holding means which faces the substrate, a reflection reduction treatment has been performed in a prescribed range positioned in the light emission direction, said reflection reduction treatment reducing reflection, in the direction of the measurement means, of the light emitted from the measurement means, as compared to the surface of the substrate holding means that faces the substrate outside the prescribed range.

Embodiments provide a deposition mask. a method for manufacturing the deposition mask and an electronic device fabricated using the deposition mask. The deposition mask includes a mask frame, an inorganic layer disposed on the mask frame, a plurality of nitride layers sequentially stacked on the inorganic layer, and an alignment member disposed between the plurality of nitride layers.

The application discloses a low-stress Al2O3 / YAG transparent ceramic gradient film, a preparation method and application, the Al2O3 / YAG transparent ceramic gradient film is deposited on a sapphire substrate, through sintering, yttrium ions in the YAG film and aluminum ions in the Al2O3 film diffuse with each other, the continuous and gentle change of the thermal expansion coefficient is realized, so that the prepared gradient film can effectively disperse thermal stress.The preparation method comprises the following steps: pretreating the sapphire substrate; using an Al2O3 ceramic target and a YAG ceramic target, depositing each layer in turn through magnetron sputtering, and then performing high-temperature sintering to form the gradient film structure.The film has the characteristics of obvious thermal stress buffering effect, optical transparency and strong film-substrate bonding force, and can be applied to the fields of optical crystal bonding, semiconductor and electronic packaging, high-temperature protection and thermal barrier coating and the like.

This laminated structure includes a first glass substrate, a first layer, a second layer, and a second glass substrate. The first layer includes one or more selected from tungsten oxide represented by the general formula WO3-x (0 ≤ x ≤ 0.28), silicon oxynitride represented by the general formula SiOaNb, and aluminum oxide. The second layer includes tungsten bronze. The first layer, the second layer, and the second glass substrate are arranged in the stated order from the position closest to the first glass substrate.

This invention relates to a sputtering target (10), a coating system (30), and a coating method thereof. The sputtering target (10) includes a base (12) with a target plate (14) fixed to the base and made of a first sputtering material. The target plate has a surface (16) and a plurality of recesses (18) formed in the surface. A plurality of inserts (20) are arranged in the recesses (18). At least some of the inserts (20) are made of a second sputtering material, wherein the second sputtering material has a higher sputtering rate than the first sputtering material. The object of the invention is to obtain a particularly uniform coating. This is achieved by molding the inserts (20) made of the second sputtering material such that the lengths (D1, D2) of the inserts, measured in a direction parallel to the surface (14), increase in the depth direction (T) from the surface (14) to the base (12).

The application belongs to the technical field of photoelectric materials and devices, and discloses a quasi-two-dimensional perovskite light-emitting layer, a preparation method thereof and a perovskite light-emitting diode. The preparation method comprises the following steps: at least one group of organic A-site cation halides is deposited on a substrate by a sequential thermal evaporation method, and then B-site divalent cation halides are deposited, so that a perovskite precursor film is obtained; the organic A-site cation comprises first and second organic A-site cations, the first organic A-site cation is a macromolecular organic A-site cation, and no inorganic A-site cation is introduced in the whole deposition process; then, annealing treatment is performed, so that the perovskite precursor film undergoes a solid-phase diffusion reaction, and a quasi-two-dimensional perovskite light-emitting layer is formed. Through the combination of material optimization, sequential evaporation and subsequent annealing, the present application is beneficial to the induced formation of a low-dimensional phase and the adjustment of phase distribution, so that the effective control of the dimensional structure of the perovskite light-emitting layer is realized, and a high-quality quasi-two-dimensional perovskite light-emitting layer is formed.

The present application relates to the field of dental prosthesis manufacturing, and particularly relates to a 3D printing device and method for customized design of dental prosthesis. The device comprises a printing box, a 3D printing device, a cleaning assembly, a printing base, a donor membrane assembly, an accumulator, a deposition assembly and a prosthesis assembly assembly. The 3D printing device is arranged on the top of the printing chamber; the cleaning assembly is arranged on one side of the 3D printing device; the printing base is arranged at the bottom of the printing chamber and is configured to be reversibly movable; the donor membrane assembly is arranged on the other side of the cleaning assembly; the deposition assembly is arranged in the ring-shaped structure of the membrane; and the prosthesis assembly assembly is arranged through the installation chamber. The present application solves the industry problem of easy collapse of the thin-walled metal base of the dental prosthesis by means of integrated design and laser deposition innovative process, while realizing full-process automatic production, significantly improving efficiency and precision.

This application discloses a wafer carrier tray and an epitaxial growth apparatus, relating to the field of semiconductor epitaxial growth technology. By setting the first surface of the wafer carrier tray to support the wafer as a convex structure, the center of the wafer is in direct contact with the center of the first surface of the wafer carrier tray, while there is a gap between the periphery of the wafer and the periphery of the first surface of the wafer carrier tray. This results in the temperature at the periphery of the wafer being lower than the temperature at the center of the wafer, and consequently, the epitaxial growth rate at the periphery is lower than that at the center of the wafer. Ultimately, this yields an epitaxial wafer with a more stable thickness model during the epitaxial growth process, characterized by a higher center and lower edges. This reduces the impact of uneven density distribution of the wafer carrier tray and the wafer's own curvature on the thickness model of the epitaxial wafer, thereby reducing the probability of product scrap due to changes in the thickness model and improving the stability of the epitaxial growth process and product quality.

This invention relates to a method for preparing gallium-based liquid metal ultrafine nanodroplets, belonging to the field of nanomaterial preparation technology. The method involves ultrasonically cleaning the substrate surface to remove contaminants and drying it to obtain a clean substrate. The clean substrate undergoes surface modification treatment to obtain a modified substrate. The modified substrate is placed in a vacuum evaporation chamber, and a high-purity gallium-based liquid metal source is placed in the evaporation source container. The vacuum evaporation chamber is then evaporated to a working vacuum level. The temperature of the modified substrate in the vacuum evaporation chamber is controlled to a preset deposition temperature. The evaporation source container is heated to the evaporation temperature to evaporate the high-purity gallium-based liquid metal source, which is then deposited onto the modified substrate surface for in-situ condensation, nucleation, and growth into a discrete array of gallium-based liquid metal nanodroplets. The resulting gallium-based liquid metal ultrafine nanodroplet dispersion is obtained by physical peeling. This invention offers a simple, one-step process. By adjusting the substrate temperature and evaporation parameters, precise control over the size and distribution of the gallium-based liquid metal ultrafine nanodroplets can be achieved.

To provide a barrier laminate excellent in adhesion of a barrier coat layer and an acid modified polyolefin layer.SOLUTION: A barrier laminate includes a paper substrate layer, a barrier layer, and a sealant layer in this order, and further includes an acid modified polyolefin layer between the paper substrate layer and the barrier layer or between the barrier layer and the sealant layer. In a barrier film, the barrier layer includes a base material film, a first inorganic oxide vapor-deposited layer, and a barrier coat layer in this order. The barrier coat layer is a cured film of a hydrolyzed product of metalalkoxide and a water-soluble polymer. When a surface of the barrier coat layer is measured by X-ray photoelectron spectroscopy (XPS), a ratio (M / C) of metal atoms (M) and carbon atoms (C) is 1.35 or less. The barrier coat layer has a thickness of 155 nm or more. The acid modified polyolefin layer abuts on the barrier coat layer.SELECTED DRAWING: Figure 1

Efficiently perform film deposition using different types of deposition materials. [Solution] A film deposition apparatus for depositing multiple element rows on a substrate, comprising: a substrate support means; a mask support means; a deposition means equipped with multiple deposition sources of different deposition materials; a moving means for relatively moving the substrate support means and the deposition means in the column direction of the element row; a first changing means for changing the relative position of the substrate support means and the deposition means in the row direction of the element row; and a second changing means for changing the relative position of the substrate support means and the mask support means. One film deposition operation is performed by releasing the deposition material from the deposition means onto the substrate while relatively moving the substrate support means and the deposition means in the column direction using the moving means. For each film deposition operation, the combination of the deposition source and the film deposition region of the substrate is changed by the first changing means, and the combination of the element row and the opening row of the mask is changed by the second changing means.

This application discloses an adaptive control method and electronic device for PVD and micro-arc oxidation equipment. The method includes: constructing a parameter inversion model characterized by a forward mapping relationship between prior distributions of process parameters and physical constraints; establishing a causal topology based on the mapping relationship, and identifying anomaly types by calculating the joint probability density of the two hypotheses; executing different strategies according to the anomaly type: shielding faulty sensors and reconstructing signals when measurement anomalies occur, and calculating parameter corrections through online optimization when mechanistic anomalies occur; performing safety verification and smoothing filtering on the corrections based on safety constraint envelopes; and generating an interpretable report containing root causes, contribution levels, and maintenance guidelines. This application achieves accurate anomaly type differentiation and robust adaptive control through physical-data decoupling modeling and causal reasoning, significantly improving the stability, safety, and interpretability of processes in complex industrial environments.

The application provides an indium oxide / tin hydroxide composite and a preparation method of an ITO target material, and belongs to the field of ITO target materials. The application provides a preparation method of an indium oxide / tin hydroxide composite, which comprises the following steps: mixing nano indium oxide, a tin salt solution, an inorganic base containing hydroxyl ions and water to perform a precipitation reaction, and granulating the obtained precipitation reaction product to obtain the indium oxide / tin hydroxide composite; the molar ratio of indium elements in the nano indium oxide to tin elements in the tin salt solution is 20-100:1. The nano indium oxide is directly introduced in the application, so that the operation of a large amount of precipitation is avoided; the trace-doped tin hydroxide is obtained by using the precipitation method, so that the uniform distribution of the tin hydroxide on the surface of the indium oxide can be ensured, the distribution of tin oxide in the ITO target material prepared by the method is uniform, and the density of the ITO target material is improved.

The application relates to a narrow-band-gap SnO2 film and a preparation method and application thereof, and belongs to the field of semiconductor film and preparation and application. The application utilizes a magnetron sputtering method to prepare a metal Sn film with N solid solution, and then carries out heat treatment under a certain vacuum degree to obtain a narrow-band-gap SnO2 film with an orthogonal phase structure, a band gap of 2.34-2.57 eV, far less than 3.6 eV, and good conductivity. The narrow-band-gap SnO2 film can simultaneously serve as an electrode and a light absorption layer of a solar cell, simplifies the structure of the solar cell, and reduces the cost.

This invention discloses a composite thermal spray powder for wear-resistant coatings and its preparation method, relating to the field of thermal spray materials technology. The composite thermal spray powder for wear-resistant coatings comprises, by weight, the following components: 18-26 parts of a metal matrix material, 54-66 parts of a hard reinforcing phase, 8.5-12.5 parts of nano-Ti powder, 2.6-3.3 parts of a reactive carbon source, 0.8-1.5 parts of a buffer carbon source, 0.8-1.2 parts of a transient liquid phase additive, 1.5-2.5 parts of a lubricating functional component, and 0.5-1.5 parts of a modified coating material. The composite thermal spray powder for wear-resistant coatings provided by this invention has the following beneficial effects: precise and stable introduction of the reinforcing phase, and stable self-lubricating properties.

The application provides a receiving end filter and a preparation method thereof, and a combined filter, and belongs to the field of coating technology. The application solves the problem that the existing receiving end filter is relatively single. The receiving end filter comprises a glass substrate, a narrow-band pass film system and an anti-reflection film system. The narrow-band pass film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The anti-reflection film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The receiving end filter has the advantages that the overlapping high transmittance is achieved within an angle range of 0°-60° of an incident angle, and the demand cut-off spectrum band has the effect of inhibiting the transmission of light signals within the angle range of 0°-60° of the incident angle.

The embodiment of the present application provides a magnetron magnet system, a magnetron sputtering device and a preparation method of the magnetron magnet system, relates to the film coating technical field, and the magnetron magnet system comprises a shell and a magnet arranged in a chamber, a vacuum is formed in the chamber, and the magnet is exposed to the vacuum. Compared with the prior art, the present application provides a whole sealing environment through the shell, can realize effective isolation of the magnet assembly and cooling water, and can realize the purpose of prolonging the service life, providing a stable magnetic field and avoiding unstable products by exhausting the blocking gas through the air exchange channel to form a vacuum in the chamber.

This invention relates to a graphene spin device, its construction method, and a method for measuring nonlocal signals. The construction method of the graphene spin device includes the step of setting electrodes on the graphene surface; wherein, the electrodes are set by magnetron sputtering, using a direct current, and the magnetron sputtering power is 200±10W. This invention creates defects at the contact point between the graphene and the electrodes through magnetron sputtering under specific conditions, forming serrated graphene edges. Then, it utilizes the unique magnetism of graphene to construct a spin device. This spin device has high spin polarization and long spin transport distance. More importantly, this spin device relies solely on the magnetism of the graphene itself for spin injection and spin detection, providing a new approach for the development of graphene spin devices. It can be used for nonlocal measurements at room temperature, has low requirements for experimental environmental conditions, and is beneficial for exploring some nontrivial electrical mechanisms.

This invention relates to the field of semiconductor materials technology, specifically to a method and film for growing layered tungsten disulfide thin films on photonic chips, comprising the following steps: using tungsten disulfide solid powder as the growth raw material, placing the growth raw material in the heating zone of a tube furnace, and placing the photonic chip on which tungsten disulfide is to be grown in the heat preservation zone of the tube furnace; introducing a protective gas into the tube furnace at a flow rate of 40-80 sccm, with the gas flow direction from the heating zone to the heat preservation zone; heating the area containing the tungsten disulfide solid powder to the tungsten disulfide growth temperature and maintaining the temperature to achieve the growth of layered tungsten disulfide thin films on the photonic chip; this invention avoids the growth of blocky or dendritic scattering sources, thereby improving the size of the film.