291 results about "Hafnium" patented technology

A component for use in a semiconductor processing chamber is provided. A metal or metal alloy component body has a process-facing surface. An intermediate aluminum oxide coating is disposed on the process-facing surface, the intermediate aluminum oxide coating being at least 99% pure by weight and having a porosity of less than 0.1% by volume, the intermediate aluminum oxide coating having a first thickness. A process-exposed layer is disposed on the intermediate aluminum oxide coating, the process-exposed layer comprising at least one of yttrium, hafnium, zirconium, lanthanum, magnesium, and a lanthanide, the process-exposed layer being at least 99% pure by weight, having a porosity of less than 0.1%, and having a second thickness, the second thickness being less than or equal to the first thickness.

A preparation method of porous hafnium carbide superhigh-temperature ceramic is characterized by comprising the following steps: dispersing graphene oxide in a solvent to form a graphene oxide dispersion liquid, mixing a monomer hafnium source solution with the graphene oxide dispersion liquid, and carrying out hydrothermal treatment on a hafnium oxide carbon precursor network structure to obtain the porous hafnium carbide superhigh-temperature ceramic. The organic-inorganic hybrid precursor is subjected to two-stage heat treatment, the first stage is inorganic treatment, the second stage is carbon thermal reduction reaction, and the porous hafnium carbide ultrahigh-temperature ceramic material is obtained. Graphene oxide is used as a structure-directing agent and an in-situ carbon source, a monomer hafnium source is uniformly anchored on the surface of a GO sheet layer on the molecular scale, an organic-inorganic hybrid precursor is formed, after the precursor is subjected to hydrothermal crosslinking, Hf species and a carbon skeleton are highly mixed on the nanoscale, and the Hf / GO composite material is obtained. And the subsequent carbon thermal reduction reaction can be efficiently completed in a low-temperature interval of 1300-1450 DEG C.

The invention relates to the technical field of hafnium oxide preparation, in particular to a method for preparing hafnium oxide with ultralow iron content, which comprises the following steps: based on N235 extraction separation in a hydrochloric acid system, crushing hafnium oxide raw stone, performing coarse grinding to obtain hafnium oxide powder, then sequentially performing alkali fusion decomposition treatment and acid leaching impurity removal treatment to obtain a zirconium-hafnium mixed solution, and then performing vacuum drying on the zirconium-hafnium mixed solution to obtain the hafnium oxide with ultralow iron content. The preparation method comprises the following steps: taking hafnium as a raw material, carrying out extraction and back extraction to obtain a hafnium-enriched solution, treating the hafnium-enriched solution with ion exchange resin to obtain a high-purity hafnium solution, finally adding saturated ammonia water, filtering and washing the obtained precipitate, drying, and firing to obtain the hafnium oxide with ultralow iron content. According to the invention, while zirconium and hafnium separation is realized, a small amount of contained metal cations, especially iron ions, are fully removed, and the iron content is reduced, so that hafnium oxide with ultralow iron content is obtained.

Disclosed herein is a method, system and apparatus for forming, by a cyclic process, a dopant concentration gradient in a doped hafnium zirconium oxide (HZO) layer on a substrate, the cyclic process includes, providing the substrate in a reaction chamber, a) pulsing a hafnium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the hafnium precursor(s), b) pulsing a zirconium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the zirconium precursor(s), c) pulsing an oxygen reactant(s) into the reaction chamber, where at least a part of the substrate is contacted with the oxygen reactant(s), d) pulsing a dopant precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the dopant precursor(s), and e) purging the reaction chamber.

The invention relates to a zirconium and hafnium extraction agent as shown in a formula I, an extraction system and a method for separating and purifying zirconium and hafnium. The zirconium and hafnium extraction agent shows excellent zirconium and hafnium separation performance and is suitable for efficient separation and high-purity preparation of zirconium and hafnium. According to the zirconium and hafnium separation and purification method, stable preparation of high-purity zirconium and hafnium products with the purity not lower than 99.99% is achieved. (I)

The utility model discloses a code disc for a reflective encoder, which relates to the technical field of encoder equipment and comprises a glass code disc, a low-reflection film is fixedly connected to the surface of the glass code disc, and a high-reflection film is fixedly connected to one side, far away from the glass code disc, of the low-reflection film. The low-reflection film is formed by plating acid-resistant alkali metal and metal oxide through a vacuum coating machine, the acid-resistant alkali metal comprises niobium, molybdenum, tantalum and hafnium, one of the niobium, the molybdenum, the tantalum and the hafnium is short for H, the metal oxide comprises sio2, sio, al2o3 and zro2, one of the sio, the al2o3 and the zro2 is short for L, and the plating sequence of the acid-resistant alkali metal and the metal oxide is LHLHLHLHLHL, and after the thickness of each layer of the acid-resistant alkali metal and the metal oxide is optimized, the thickness range is 10-150nm, so that the problems that the performance of a traditional material cannot reach an ideal level and the overall effect and the accuracy of equipment are reduced when the traditional glass code disc is in a working environment under high-intensity light or in a scene requiring high reflectivity are solved.

The invention provides a hafnium-zirconium-oxygen film, a preparation method thereof and a hafnium-zirconium-oxygen film sensor, and belongs to the technical field of piezoelectric sensors, the hafnium-zirconium-oxygen film is prepared from a hafnium-zirconium-oxygen material, the chemical general formula of the hafnium-zirconium-oxygen material is Aly-HfxZr1-xO2, x is greater than or equal to 0.3 and less than or equal to 0.7, and y is greater than or equal to 0.02 and less than or equal to 0.08. The lead-free hafnium-based oxide is selected as a piezoelectric core, HfxZr1-xO2 is adopted as a matrix, Al is doped to stabilize an orthogonal ferroelectric phase and inhibit oxygen vacancy, d33 = 85-95 pC / N within the thickness range of 10-200 nm and reaches 90% of that of an existing PZT film, and the Curie temperature is increased to 600 DEG C and is greatly increased compared with 350 DEG C of the PZT film. And the material is completely free of lead and conforms to the RoHS instruction.

The surface treatment agent is designed to improve adhesion to a coating film. This agent contains at least one metal component (A) selected from the group consisting of zirconium, titanium, and hafnium, as well as an alkyldiallylamine polymer (C). The metal component (A) has a content ranging from 10 ppm to 10,000 ppm by mass, in terms of metal element, relative to the total mass of the surface treatment agent. Furthermore, the alkyldiallylamine polymer (C) includes a segment with a heterocyclic structure represented by formula (1a) or (1b).

The invention relates to a wear part for an arc torch, plasma torch or plasma cutting torch, characterised in that the wear part or at least one part or a region of the wear part consists of an alloy formed from silver and zirconium, silver and hafnium, or silver and zirconium and hafnium.

This invention discloses a method for preparing high creep-resistant and high-temperature resistant titanium alloy powder, relating to the field of titanium-based alloy technology. The titanium alloy powder composition includes 4%–8% aluminum, 1%–6% tin, 2%–8% zirconium, 1%–10% niobium, 0.5%–5% molybdenum, 0.05%–0.8% silicon, 0.01%–0.5% yttrium, and 0.5%–5% hafnium, with the balance being titanium and impurities. The titanium alloy melt is obtained by vacuum melting, cooled into alloy ingots, remelted, and then conveyed to an atomization system under high pressure under inert argon protection. Spherical titanium alloy powder is obtained by gas atomization; after multi-stage sieving and deep purification, impurities are removed and the oxygen, nitrogen and hydrogen content is reduced. The purified titanium alloy powders of different particle sizes are mixed and stored in an inert atmosphere; the atomization pressure is 3MPa to 10MPa, the powder particle size is 15μm to 53μm or 45μm to 105μm, the sphericity is not less than 95%, and the oxygen content is ≤0.15wt%, nitrogen content is ≤0.03wt%, and hydrogen content is ≤0.01wt%. This invention has excellent high-temperature stability, high creep resistance and good formability.

A non-oriented electrical steel sheet according to an embodiment comprises 2.0 to 3.8 wt% of silicon (Si), 0.5 wt% or less (excluding 0) of manganese (Mn), 0.6 wt% or less (excluding 0) of aluminum (Al), 0.0015 wt% or less of scandium (Sc), 0.0015 wt% or less of hafnium (Hf), 0.0015 wt% or less of tantalum (Ta), and the balance being iron (Fe) and other inevitable elements, and thus may have mechanical properties suitable for use as a motor core material.

The invention relates to high-purity preparation of key metals, and discloses a production method of a high-purity hafnium compound, which comprises the following steps: S1, carrying out melting reaction on a hafnium-containing material, flux metal, zircon salt and a salt-containing material to obtain hafnium-containing molten salt; the smelting temperature during the melting reaction is 700-1250 DEG C, and the mass ratio of hafnium in the hafnium-containing material to zirconium in the zircon salt is greater than or equal to 2.0; the content of zirconium in the hafnium-containing molten salt is less than or equal to 0.5 wt%, and the content of hafnium is greater than or equal And S2, further separating the hafnium-containing molten salt obtained in the step S1 to obtain the high-purity hafnium compound. According to the method, the high-purity hafnium product can be prepared without repeated high-temperature fractionation or multi-stage extraction treatment, and the method has the advantages of being short in process, easy to operate and the like; the zirconium in the fused salt is removed, meanwhile, the problem of separation of zirconium and hafnium in the coarse zirconium salt is actually solved, and maximum utilization of the value of the raw materials is realized, so that the economic benefit of the process is better.

Ferroelectric diodes comprising materials such as aluminum scandium nitride (AlScN) or hafnium zirconium oxide (HfZrO2) may be formed atop semiconductor structures such as CMOS wafers to create storage memory cells, search Ternary Content Addressable Memory (TCAM) cells, and / neural circuitry. The diodes are non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, with high on / off and self-rectifying ratios. Cells may be formed, for example, with two diodes that are oppositely polarized, and may be achieved without transistors to form, for example, 0T-2R structures.

The invention relates to a γ / γ' nickel-based alloy comprising, in weight percentages, 16% to 18.5% chromium, 10% to 23% iron, 0% to 5% cobalt, 0.5% to 3% molybdenum, 1% to 2% titanium, 3% to 5% aluminum, 0% to 5% tungsten, 1% to 3.5% niobium, 0% to 0.5% hafnium, 0% to 0.03% carbon, 0% to 0.06% boron, 0% to 0.06% zirconium, 0% to 0.5% manganese, and 0% to 0.5% silicon, the remainder consisting of nickel and unavoidable impurities.

The invention belongs to the technical field of metal ion separation, and discloses a functional COFs (Covalent Organic Frameworks) material for zirconium and hafnium separation as well as a preparation method and application of the functional COFs material. The material is prepared by taking an aromatic monomer containing a conjugated structure as a skeleton through aldehyde amine condensation, crosslinking, carbonization and functional loading, and has stable imine bond connection and a three-stage through hole structure consisting of macropores, mesopores and micropores. A phosphate group and a P507 / Cyanex 302 mixed extraction agent are introduced into the surface of the material through a pre-modification and post-loading strategy. The material shows high-selectivity adsorption on zirconium ions, the separation coefficient beta Zr / Hf is larger than or equal to 3.5, the adsorption speed is high, the stability is excellent in strong acid, high temperature and irradiation environments, and the material can be recycled. The invention also provides a mild and controllable preparation method of the material and a specific application of the material in a zirconium and hafnium column separation process, the material is particularly suitable for purification preparation of nuclear-grade zirconium and hafnium, and the problems of heavy organic pollution, low efficiency and poor material stability in the existing separation technology are solved.

This invention discloses a method for controlling the polarization reversal characteristics of hafnium-based ferroelectric thin films through surface ion treatment, relating to the field of ferroelectric memory device technology. The method includes: providing a substrate; forming a hafnium-based ferroelectric thin film on the substrate; and after rapid thermal annealing of the hafnium-based ferroelectric thin film, introducing control ions onto the film surface through a surface ion treatment process to control the polarization reversal characteristics. The surface ion treatment process includes electrochemical treatment or plasma treatment, and the control ions include one or more of halide ions, hydrogen ions, hydroxide ions, sulfur-containing ions, and nitrogen-containing ions. This invention achieves effective control of the surface electric field distribution and polarization reversal barrier of the hafnium-based ferroelectric thin film through surface ion treatment, significantly reducing the coercive field and optimizing polarization stability, enabling ferroelectric domains to flip at lower voltages. This method is simple, low-cost, and compatible with CMOS processes, making it suitable for fabricating high-performance, low-power ferroelectric memory devices.

The invention relates to a novel functional material for X-ray protection, in particular to a liquid metal flexible shielding material and a preparation method and application thereof. The material comprises liquid metal and solid metal, the liquid metal serves as a solvent to be filled in gaps of the solid metal, the liquid metal is gallium, gallium indium, gallium indium tin, gallium indium tin zinc or mercury, and the solid metal is selected from one or more of indium, tin, gold, platinum, iridium, zirconium, niobium, molybdenum, ruthenium, osmium, rhenium, rhodium, tungsten, antimony, palladium, tantalum, hafnium, lutetium, lead, ytterbium, thulium, bismuth, silver, erbium, holmium, dysprosium, terbium, gadolinium, samarium, neodymium, lanthanum, praseodymium, cerium and europium. On the basis of compounding of the liquid metal solvent and the solid metal solute based on the liquid metal combinatology, the liquid metal and the solid metal are jointly used for protecting X-ray radiation, the comprehensive performance of X-ray protection is improved, and meanwhile the variety and number range of selectable metal elements is widened.

The application provides a hafnium-based thin film crystal structure regulation method, which comprises the following steps: providing a substrate; preparing a hafnium-based thin film on the substrate; changing the strain of the hafnium-based thin film by controlling the preparation parameters of the hafnium-based thin film; and performing thermal annealing on the thin film structure, and regulating the crystal structure of the hafnium-based thin film by controlling the annealing temperature based on the temperature-strain phase diagram of the hafnium-based thin film. The application introduces different sizes of strain into the thin film by regulating the parameters in the preparation process of the hafnium-based thin film, and then cooperatively controls the temperature and the strain of the hafnium-based thin film in the annealing process, so as to effectively and finely adjust the crystal structure of the hafnium-based thin film, and optimize the material performance. The regulation method of the application is more accurate and effective than the traditional single temperature or thin film parameter control.

The invention discloses a preparation method and application of a cubic phase hafnium carbide nano-material, and relates to the technical field of rapid preparation of electrocatalytic nano-materials, the cubic phase hafnium carbide nano-material is prepared by adopting a rapid high-temperature thermal shock Joule thermal synthesis method, and the defects of high temperature requirement and long annealing time of a traditional annealing method are overcome; hafnium carbide in the cubic phase nanometer material is in a nanometer particle shape, and the crystal structure is a cubic phase; the hafnium carbide nano material has good alkaline oxygen reduction reaction catalytic performance, and can be used as a cathode material of a zinc-air battery and a fuel cell.

A component for use in a semiconductor processing chamber is provided. A component body of a metal or metal alloy has a process facing surface. An intermediate aluminum oxide coating is on the process facing surface, wherein the intermediate aluminum oxide coating is at least 99% pure by weight and has a porosity of less than 0.1% by volume, and wherein the intermediate aluminum oxide coating has a first thickness. A process exposed layer is on the intermediate aluminum oxide coating, wherein the process exposed layer comprises at least one of yttrium, hafnium, zirconium, lanthanum, magnesium, and a lanthanide, and wherein the process exposed layer is at least 99% pure by weight and has a porosity of less than 0.1% and has a second thickness, wherein the second thickness is less than or equal to the first thickness.

The invention discloses a low-density low-rhenium nickel-based single-crystal high-temperature alloy which comprises the following chemical components in percentage by weight: 2.8 to 6 percent of chromium, 5.5 to 9 percent of cobalt, 4 to 7 percent of molybdenum, 4 to 6 percent of tungsten, 4 to 7 percent of tantalum, 4 to 7 percent of aluminum, 0.07 to 0.3 percent of hafnium, 2 to 4 percent of rhenium, 1.5 to 2.5 percent of ruthenium, 0 to 0.01 percent of yttrium and the balance of nickel. Wherein in percentage by weight, the content relation of the molybdenum and the tungsten is 0.7 lt; molybdenum / tungsten lt; the content relation of molybdenum and rhenium is that molybdenum / rhenium is greater than or equal to 1.1. The strength of the alloy is improved by increasing the content of molybdenum, the contents of tungsten and rhenium are reduced, precipitation of harmful phases is reduced by comprehensively regulating and controlling the proportion of elements in rows and columns, it is ensured that the creep life of the alloy reaches the fourth-generation single crystal level, meanwhile, the alloy has the room-temperature density not higher than 8.9 g / cm < 3 >, the high-temperature low-stress durability of the alloy reaches the typical fourth-generation single crystal high-temperature alloy level, and the service life of the alloy is prolonged. The method is suitable for manufacturing advanced aero-engines.

The invention relates to the technical field of electronic information materials and devices, in particular to a doped hafnium oxide material, a preparation method of the doped hafnium oxide material, a device and a preparation method of the device, the hafnium oxide material is doped with metal elements with the chemical valence ranging from + 3 valence states to + 5 valence states, the chemical formula of the doped hafnium oxide material is Hf < 0.5 > X < 0.5 > + m < O2 >, X is the metal element, and m is-0.4-0.8. The hafnium element is + 4 in valence, so that metal elements lower than or higher than + 4 in valence are used for doping hafnium oxide, an additional charge center can be provided in the material, and formation of a polar phase is further facilitated; if the metal element is equivalently doped with + 4 valence, the formation energy of the polar phase is reduced, and the content of the polar phase is further improved. In addition, the device based on the doped hafnium oxide material has the excellent characteristics of large polarization, high dielectric constant, high fatigue characteristic and low coercive field.

The invention discloses an N-alkanoyl alkylamide hafnium / zirconium mixed complex as well as a preparation method and application thereof. Under the protection of inert gas, quantitative N-alkanoyl alkylamide and a tetra (diamine) hafnium / zirconium compound are added into an anhydrous solvent; adding an anhydrous solvent, reacting for a period of time, filtering, and removing the solvent and byproducts from the filtrate by reduced pressure distillation to obtain a white solid; and recrystallizing and sublimating the white solid to obtain the target metal complex. The precursor of the complex is a mononuclear compound formed by the ligand with large steric hindrance, and has good volatility and appropriate thermal stability, the synthesized product has small pollution to the substrate, the synthesis method is simple and convenient, the process operation is simple, the yield is high, the cost is low, and the complex has good application value in the field of preparation of high-K materials.

The invention discloses a phenolic aldehyde and hafnium ceramic precursor composite material and a preparation method thereof. The composite material is prepared from high-carbon-content resin and filler according to the mass ratio of (15-40): (60-85). The hafnium oxide polymer is used as a filler and is mixed with the high-carbon-content resin to prepare the composite material, and the composite material has good high temperature resistance, ablation resistance and oxidation resistance and can be used as an ultrahigh-temperature thermal insulation material.

The present application relates to a battery and a method for manufacturing the battery. The battery includes an anode comprising aluminium or aluminium alloy, a cathode comprising a transition metal dichalcogenide of the formula MX2 and a transition metal oxide of the formula M′Oz; wherein:—O is oxygen;—M and M′ are each independently a transition metal selected from the group consisting of Ti (titanium), V (vanadium), Zr (zirconium), Nb (niobium), Mo (molybdenum), Sn (tin), Hf (hafnium), Ta (Tantalum), W (tungsten) or combinations thereof;—X is selected from S (sulphur), Se (selenium), Te (tellurium) and combinations thereof; and—z is 1, 2 or 3; and an electrolyte comprising ionic aluminium, wherein the electrolyte is disposed between the anode and the cathode.

The invention discloses a high-toughness refractory high-entropy alloy based on a hafnium element addition regulation and control deformation mechanism, the general formula of the high-entropy alloy is HfxNbTaTiZr, and x is more than or equal to 0.5 and less than or equal to 1.5; according to the high-entropy alloy, under the low-temperature and high-strain-rate deformation condition, dislocation slippage and twist belt nucleation and expansion are taken as main parts of a microscopic deformation mechanism, in addition, the invention further discloses a preparation method of the high-entropy alloy, and the preparation method comprises the steps that firstly, raw materials are prepared and weighed; 2, vacuum arc melting; (3) vacuumizing; 4, gas washing and argon filling; and 5, arc starting smelting is conducted, and the high-entropy alloy is obtained. According to the HfxNbTaTiZr high-strength and high-toughness refractory high-entropy alloy based on a hafnium element addition regulation and control deformation mechanism provided by the invention, on the premise of ensuring excellent retention of strength, the dynamic toughness of a material is remarkably improved, collaborative optimization of toughness performance is realized, and the defect that the toughness of existing NbTaTiZr and other refractory high-entropy alloys is insufficient under low-temperature and high-speed impact is overcome.

The application relates to the technical field of refractory materials, in particular to an aluminum-carbon brick for refining ladle walls and a preparation process thereof, which comprises tabular corundum aggregates, alpha-type alumina micropowder, flaky graphite, oxide composite powder, silicon carbide-based composite powder, lanthanum-hafnium composite oxide nanometer powder, aluminum powder, carbon black and thermosetting phenolic resin. The oxide composite powder accelerates the reduction reaction of ferrous oxide on the surface of the brick body, so that the ferrous oxide is rapidly consumed by carbon in a very shallow layer on the contact surface of the brick, and the penetration of the ferrous oxide into the interior of the brick body is prevented; the silicon carbide-based composite powder fixes the liquid iron obtained by surface reduction in situ, so that the liquid iron cannot freely flow and contact the refining slag again; the lanthanum-hafnium composite oxide nanometer powder strengthens the structural stability, and the obtained brick body can better meet the use requirements of long-term high-strength service of the refining ladle walls.

Catalyst systems comprising a procatalyst having a structure according to Formula (I) where M is a metal selected from titanium, zirconium, and hafnium, the metal having a formal oxidation state of +2, +3, or +4; each X is a monodentate or bidentate ligand; n is 1 or 2; Q is a monoanionic spectator ligand that is different from each X; RY is (C1−C30)hydrocarbyl (C1−C30)heterohydrocarbyl, (C6−C30)aryl, or (C3−‍C30)heteroaryl; R1 is (C1−‍C50)hydrocarbyl, (C1−C50)heterohydrocarbyl, (C6−‍C30)aryl, or (C3−‍C30)heteroaryl; each of R2 and R3 is independently selected from the group consisting of (C1−C30)hydrocarbyl, (C1−C30)heterohydrocarbyl, (C6−‍C30)aryl, (C3−C30)heteroaryl, −ORC, −Si(RC)3, −Ge(RC)3, halogen, and –H, wherein R2 and R3 are optionally covalently linked to form an aromatic or non-aromatic ring; and each RC is independently selected from the group consisting of (C1−C30)hydrocarbyl, (C1−C30)heterohydrocarbyl, (C6−‍C30)aryl, (C3−‍C30)heteroaryl, and −H.

The application relates to the technical field of materials, in particular to an anti-erosion low-carbon backing brick refractory material and a preparation method thereof, which comprises fused magnesia coarse aggregate, fused magnesia medium aggregate, fused magnesia fine powder, zircon carbide anchoring modified flaky graphite, boron-doped lignin-based titanium carbide composite powder, nano hafnium carbide and phenolic resin binder; the synergistic protection of the three functional components of the zircon carbide anchoring modified flaky graphite, the boron-doped lignin-based titanium carbide composite powder and the nano hafnium carbide effectively solves the problems that, under the VD vacuum degassing working condition, the MgO in the existing low-carbon magnesia-carbon backing brick reacts with residual carbon in the brick to cause gasification, and the antioxidation additive promotes the reaction and aggravates the damage to the brick structure.

The invention discloses low-heat-treatment-deformation hafnium microalloyed gear steel and a preparation method thereof, and belongs to the technical field of high-temperature carburized gear steel. The gear steel comprises the following components in percentage by mass: 0.17%-0.23% of C, 0.15%-0.35% of Si, 0.80%-1.10% of Mn, 1.00%-1.30% of Cr, 0.01%-0.10% of Ti, 0.02%-0.10% of Hf, less than or equal to 0.020% of P, less than or equal to 0.015% of S and the balance of Fe and impurities, and the ratio of Hf to Ti is controlled to be 0.4-1.5. The preparation method comprises the steps of smelting, continuous casting, rolling, controlled cooling and low-deformation heat treatment. Through Hf microalloying, the high-temperature stability of HfN / C and the thermal expansion property matched with a matrix are utilized, after carburization is conducted at the temperature larger than or equal to 930 DEG C, ASTM 8-grade or above superfine grains can still be kept, the quenching stress is remarkably reduced, the tooth direction deviation of the gear is smaller than or equal to 0.05 mm, unification of high-temperature efficient carburization and extremely low deformation is achieved, and the high-precision gear is suitable for manufacturing of new energy automobiles and other high-precision gears.