13314results about How to "Improve properties" patented technology

A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

An osteogenic osteoimplant in the form of a flexible sheet comprising a coherent mass of bone-derived particles, the osteoimplant having a void volume not greater than about 32% and a method of making an osteogenic osteoimplant having not greater than about 32% void volume, the method comprising: providing a coherent mass of bone-derived particles; and, mechanically shaping the coherent mass of bone-derived particles to form an osteogenic osteoimplant in the form of a flexible sheet.

A bicomposite material based on collagen is prepared which has two closely bound layers and is biocompatible, non-toxic, hemostatic and biodegradable in less than a month, and can be used in surgery to achieve hemostasis and prevent post-surgical adhesion. To prepare the material, a solution of collagen or gelatin, which may contain glycerine and a hydrophilic additive such as polyethylene glycol or a polysaccharide, is poured onto an inert support to form a layer 30 .mu.m to less than 100 .mu.m thick. Then a polymeric porous fibrous layer is applied during gelling of the collagen or gelatin, and the resultant material is dried. The polymeric porous fibrous layer may be made of collagen or a polysaccharide, and have a density of not more than 75 mg / cm.sup.2, a pore size from 30 .mu.m to 300 .mu.m and a thickness of 0.2 cm to 1.5 cm.

Composite materials formed from biocompatible polymer fibers and biodegradable polymers are disclosed. The heat treatment conditions for the reinforcing fibers are described so that the mechanical properties of the fibers can be retained during composite consolidation process. The processing conditions and set-ups to consolidations are constrained to the temperatures lower than fiber heat treatment temperatures. The reinforcing fibers are restrained under tension so that the minimum relaxation occurs during consolidation process.

Soft, durable and bulky tissue products comprising non-wood fibers and more particularly high yield hesperaloe pulp fibers are disclosed. The tissue products preferably comprise at least about 5 percent, by weight of the product, high yield hesperaloe pulp fiber and have relatively modest tensile strengths, such as a geometric mean tensile (GMT) less than about 1,000 g / 3″, and improved durability and cross-machine direction (CD) properties, such as a CD Stretch greater than about 10 percent. Additionally, at the foregoing tensile strengths the products are not overly stiff. For example the tissue products may have a Stiffness Index less than about 10.0.

Thermoplastic starch compositions that include a particulate filler, e.g. an inorganic filler component, and optional fibrous component The compositions include a thermoplastic phase comprising a thermoplastic starch melt that contains, at a minimum, starch blended with an appropriate plasticizing agent under conditions in order for the starch to form a thermoplastic melt. The thermoplastic phase may also include one or more additional thermoplastic polymers and other optional reactants, liquids or cross-linking agents to improve the water-resistance, strength, and / or other mechanical properties of the thermoplastic melt, particularly upon solidification. The inorganic filler component may affect the mechanical properties but will mainly be added to reduce the cost of the thermoplastic starch compositions by displacing a significant portion of the more expensive starch or starch / polymer melt. Fibers may optionally be included in order to improve the mechanical properties of the thermoplastic starch compositions. The thermoplastic starch compositions may be shaped into a wide variety of useful articles, such as sheets, films, containers, and packaging materials. Because the thermoplastic starch compositions will typically include a thermoplastic phase that is biodegradable, and because the other components will either constitute a naturally occurring mineral and optionally a natural fiber, the overall composition will typically be more environmentally friendly compared to conventional thermoplastic materials.

The present invention relates to circular anastomosis stapler and kits comprising reinforcing buttress materials and fixation tools that are slidably installed on the anvil shaft of such staplers which provides a temporary mechanical fixation of a reinforcing buttress to the anvil surface of a circular stapler during the insertion of the anvil into the tubular tissue. When the anvil, loaded with the buttress, is in the desired location, the fixation tool is pulled back along the anvil shaft and removed. The shaft is then connected to the stapling head and the stapling is performed. The present invention also relates to methods for using the kits and devices therein.

In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450 DEG C., and, after crystallization, keeping the maximum processing temperature at or below 350 DEG C. In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.

The invention relates to an aqueous emulsion polymerization of fluorinated monomers using perfluoropolyethers of the following formula (I) or (II). In particular, the perfluoropolyether surfactants correspond to formula (I) or (II) CF3—(OCF2)m—O—CF2—X  (I) wherein m has a value of 1 to 6 and X represents a carboxylic acid group or salt thereof, CF3—O—(CF2)3—(OCF(CF3)—CF2)z—O-L-Y  (II) wherein z has a value of 0, 1, 2 or 3, L represents a divalent linking group selected from —CF(CF3)—, —CF2— and —CF2CF2— and Y represents a carboxylic acid group or salt thereof. The invention further relates to an aqueous dispersion of a fluoropolymer having the aforementioned perfluoropolyether surfactant(s).

The present invention provides compositions comprising cationic lipids, liposomes and nucleic acid-lipid particles comprising the cationic lipids, and methods of using such compositions, liposomes, and nucleic acid-lipid particles.

This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.

This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Disclosed is a novel compound useful as a constituent of an organic EL device. Also disclosed is a practical organic EL device using this compound. This organic EL device has low driving voltage, long life, and reduced leakage current. Specifically disclosed is a compound characterized by having at least one structure (1) shown below in a molecule. Structure (1)

An optical interference color display comprising a transparent substrate, an inner-front optical diffusion layer, a plurality of first electrodes, a patterned support layer, a plurality of optical films and a plurality of second electrodes is provided. The inner-front optical diffusion layer is on the transparent substrate and the first electrodes are on the inner-front optical diffusion layer. The patterned support layer is on the inner-front optical diffusion layer between the first electrodes. The optical film is on the first electrodes and the second electrodes are positioned over the respective first electrodes. The second electrodes are supported through the patterned support layer. Furthermore, there is an air gap between the second electrodes and their respective first electrodes.

A wafer processing chamber and a method for transferring wafer in the same are provided to prevent the arcing issue. In the embodiments, a wafer is positioned on the focus ring, and a lifting apparatus is provided outside the wafer such as corresponding to the focus ring. The lifting apparatus of the embodiment could be positioned below or above the focus ring. The wafer and the focus ring are lifted together by the lifting apparatus, and transferred together by a transferring unit.

A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

The present invention provides protease compositions particularly suited for dishwashing applications.

A light emitting apparatus has a light emitting element with an emission wavelength in the range of 360 to 550 nm and a rare-earth element doped oxide nitride phosphor or cerium ion doped lanthanum silicon nitride phosphor. Part of light radiated from the light emitting element is wavelength-converted by the phosphor. The light emitting apparatus radiates white light generated by a mixture of the wavelength-converted light and the other part of light radiated from the light emitting element.

Oligonucleotide and nucleotide amine analogs and methods of preparing and using these compounds are provided by the present invention.

Ophthalmically compatible contact lenses include lens bodies configured for placement on a cornea of an animal or human eye. The lens bodies are made of a hydrophilic silicon-containing polymeric material. The lens bodies have oxygen permeabilities, water content, surface wettabilities, flexibilities, and / or designs to be worn by a lens wearer even during sleep. The present lenses can be worn on a daily basis, including overnight, or can be worn for several days, such as about thirty days, without requiring removal or cleaning.

The present invention provides compositions comprising cationic lipids, liposomes and nucleic acid-lipid particles comprising the cationic lipids, and methods of using such compositions, liposomes, and nucleic acid-lipid particles.

Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various embodiments, the methods may be used to remove hydroxyl bonds, increase film density, reduce or eliminate seams and voids, and optimize film properties such as dielectric constant, refractive index and stress for particular applications. In certain embodiments, the methods are used to form conformal films deposited by a technique such as PDL. The methods may be used in applications requiring low thermal budgets.

A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and / or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.

A transistor includes: a source region and a drain region that are formed in a substrate to be spaced apart from each other; a trench formed in the substrate between the source region and the drain region; and a buried gate electrode inside the trench, wherein the buried gate electrode includes: a lower buried portion which includes a high work-function barrier layer including an aluminum-containing titanium nitride, and a first low-resistivity layer disposed over the high work-function barrier layer; and an upper buried portion which includes a low work-function barrier layer disposed over the lower buried portion and overlapping with the source region and the drain region, and a second low-resistivity layer disposed over the low work-function barrier layer.