114731 results about "Composite material" patented technology

A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

A method for making an imprint mold uses sidewall spacer line doubling, but without the need to transfer the sidewall spacer patterns into the mold substrate. A base layer is deposited on the mold substrate, followed by deposition and patterning of a mandrel layer into stripes with tops and sidewalls. A layer of spacer material is deposited on the tops and sidewalls of the mandrel stripes and on the base layer between the mandrel stripes. The spacer material on the tops of the mandrel stripes and on the base layer between the mandrel stripes is then removed. The mandrel stripes are then etched away, leaving stripes of sidewall spacer material on the base layer. The resulting mold is a substrate with pillars of sidewall spacer material patterned as stripes and extending from the substrate, with the sidewall spacers serving as the mold features for imprinting.

Methods and intermediates for the preparation of oligomers containing diastereomerically enriched phosphorothioate and boranophosphate linkages are disclosed.

A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and / or Si—C bonds in the film; and then curing the low-k SiOCH film.

Aminoalcohol lipidoids are prepared by reacting an amine with an epoxide-terminated compound are described. Methods of preparing aminoalcohol lipidoids from commercially available starting materials are also provided. Aminoalcohol lipidoids may be prepared from racemic or stereochemically pure epoxides. Aminoalcohol lipidoids or salts forms thereof are preferably biodegradable and biocompatible and may be used in a variety of drug delivery systems. Given the amino moiety of these aminoalcohol lipidoid compounds, they are particularly suited for the delivery of polynucleotides. Complexes, micelles, liposomes or particles containing the inventive lipidoids and polynucleotide have been prepared. The inventive lipidoids may also be used in preparing microparticles for drug delivery. They are particularly useful in delivering labile agents given their ability to buffer the pH of their surroundings.

A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and / or Si—C bonds in the film; and then curing the low-k SiOCH film.