108016 results about "Composite material" patented technology

Methods and devices are provided for actuating and/or articulating a circular stapler. In one exemplary embodiment, a circular stapler is provided having an elongate shaft with a stapling apparatus coupled thereto. An electrically expandable and contractible actuator, such as an electroactive polymer actuator, can be used to pivotally or angularly adjust a position of the stapling apparatus relative to the elongate shaft by delivering energy to the electroactive polymer actuator. In another embodiment, an electroactive polymer actuator can be used to actuate the stapling apparatus, thereby driving one or more staples, preferably in a substantially curved pattern, into tissue. The actuator can alternatively or additionally drive a blade distally to cut tissue being stapled.

The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In_2-xGa_xZnO_4-δ, where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFe₂O₄, and a method of producing the thin film transistor.

A process for producing nano-scaled graphene plates with each plate comprising a sheet of graphite plane or multiple sheets of graphite plane with the graphite plane comprising a two-dimensional hexagonal structure of carbon atoms. The process includes the primary steps of: (a) providing a powder of fine graphite particles comprising graphite crystallites with each crystallite comprising one sheet or normally a multiplicity of sheets of graphite plane bonded together; (b) exfoliating the graphite crystallites to form exfoliated graphite particles, which are characterized by having at least two graphite planes being either partially or fully separated from each other; and (c) subjecting the exfoliated graphite particles to a mechanical attrition treatment to further reduce at least one dimension of the particles to a nanometer scale, <100 nm, for producing the nano-scaled graphene plates.

Methods and intermediates for the preparation of oligomers containing diastereomerically enriched phosphorothioate and boranophosphate linkages are disclosed.

A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H₂ and/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.

The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent:

• • (x) an alkali-soluble group;
  • (y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and
  • (z) a group that decomposes by action of an acid,

wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.

Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.

A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

The catalyst for polymerization and copolymerization of olefine is one novel kind of group III to group XIII transition metal complex of tridentate ligand.

The present invention relates to a catalyst or catalyst system for polymerization and copolymerization of olefine and its synthesis process and the application in catalyzing olefine polymerization. The catalyst is a kind III to XI transition metal compound with multitooth ligand.

The invention relates to novel crosslinkable copolymers which are obtainable by (a) copolymerizing at least two different hydrophilic monomers selected from the group consisting of N,N-dimethyl acrylamide (DMA), 2-hydroxyethyl acrylate (HEA), glycidyl methacrylate (GMA), N-vinylpyrrolidone (NVP), acrylic acid (AA) and a C₁-C₄-alkoxy polyethylene glycol (meth)acrylate having a weight average molecular weight of from 200 to 1500, and at least one crosslinker comprising two or more ethylenically unsaturated double bonds in the presence of a chain transfer agent having a functional group; and (b) reacting one or more functional groups of the resulting copolymer with an organic compound having an ethylenically unsaturated group.

The present invention relates to a modified colorant comprising a colorant having attached at least one organic group. Various embodiments of the organic group are disclosed. For each of these embodiments, preferably the organic group has a defined calcium index value. Also disclosed are various uses for these modified colorants, including inkjet ink compositions.

The medical articles which comprise the following: (a) a ceramic or metallic region whose surface comprises a plurality of depressions, (b) a multilayer coating region comprising multiple polyelectrolyte layers deposited over the surface of the ceramic or metallic region; and (c) a therapeutic agent disposed beneath or within the multilayer coating region. According to another aspect of the present invention, medical articles are provided, which comprise: (a) a ceramic or metallic region, (b) a multilayer coating region comprising multiple polyelectrolyte layers deposited over a surface of the ceramic or metallic region, the multilayer coating region comprising a plurality of protuberances; and (c) a therapeutic agent disposed within regions beneath the protuberances. Also described herein are methods of making such medical articles, and methods of administering a therapeutic agent to a patent using such medical articles.

A hydrogenated styrene butadiene star copolymer is incorporated in a lubricant additive package. The star copolymer can include about 3 to 25% and about 97 to 75% butadiene. The star copolymer may further be incorporated in a lubricant additive in the amount of about 12 wt % of the star copolymer as compared to the base oil.

An apparatus and a method for forming a structure within a semiconductor processing apparatus are disclosed. The apparatus includes a first reaction chamber, the first reaction chamber configured to hold at least one substrate having a first layer. The apparatus also includes a precursor delivery system configured to perform an infiltration by sequentially pulsing a first precursor and a second precursor on the substrate. The apparatus may also include a first removal system configured for removing at least a portion of the first layer disposed on the substrate while leaving an infiltrated material, wherein the infiltration and the removing at least a portion of the first layer take place within the same semiconductor processing apparatus. A method of forming a structure within a semiconductor processing apparatus is also disclosed, the method including providing a substrate for processing in a reaction chamber, the substrate having a first layer disposed on the substrate. The method may also include performing a first layer infiltration by sequentially pulsing a first precursor and a second precursor on the substrate, wherein an infiltrated material forms in the first layer from the reaction of the first precursor and the second precursor. The method may also include removing at least a portion of the first layer disposed on the substrate after performing the infiltration, wherein the infiltration and the removing at least a portion of the first layer take place with the same semiconductor processing apparatus.