Method of controlling the film properties of a CVD-deposited silicon nitride film

a technology of silicon nitride and film properties, which is applied in the direction of coatings, chemical vapor deposition coatings, semiconductor devices, etc., can solve the problems of instability problems, inconvenient use of pecvd sinsub>x/sub>h dielectric films, and the a-si:h tfts with sinsub>x/sub>:h gate dielectric are said to have instability problems, etc., to achieve greater control
US20060019502A1Inactive Publication Date: 2006-01-26APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
APPLIED MATERIALS INC
Publication Date
2006-01-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4 / NH3 / N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
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Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention pertains to a method of controlling the film properties of a silicon nitride film deposited by PECVD (plasma-enhanced chemical vapor deposition) over a substrate having a large surface area, and to the film deposited by the method. In particular, the uniformity of the density of the silicon nitride film across the substrate surface is improved by controlling the film-forming precursors.

[0003] 2. Brief Description of the Background Art

[0004] Current interest in thin film transistor (TFT) arrays is particularly high because these devices are used in liquid crystal active matrix displays of the kind often employed for computer and television flat panels. The liquid crystal active matrix displays may also contain light emitting diodes for back lighting. Further, organic light emitting diodes (OLEDs) have been used for active matrix displays, and these organic light emitting diodes require TFTs fo...

Claims

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