156 results about "Silicon nitride membrane" patented technology

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

A substrate-processing method is provided for filling a recess formed in a surface of a substrate with a silicon nitride film. The substrate-processing method includes: a) repeating a cycle that includes i) supplying a silicon precursor gas to form an adsorption layer on the substrate, ii) supplying a nitrogen-containing gas to cause nitriding of the adsorption layer, and iii) supplying a helium-containing gas and generating helium plasma in a processing chamber to expose the substrate to the helium plasma, thereby forming an adsorption inhibition region on the substrate; and b) changing conditions for generating the helium plasma according to an increase in a number of the cycles repeated.

Even when used for polishing a semiconductor wafer provided with a silicon nitride film, there is provided sulfonic acid-modified colloidal silica capable of forming a highly flat polished surface at high speed. Sulfonic acid-modified colloidal silica, wherein the sulfur content of the silica particles is 700 mass ppm or more and less than 3000 mass ppm per 1 g of the silica particles, the sulfur content in the solvent is 250 mass ppm or less per 1 g of the solvent, and the content of coarse particles having a particle size of 0.2 μm or more contained in the silica particles is 10,000,000 particles / mL or less when the silica particle concentration is 1 mass%.

The invention discloses a cerium oxide polishing solution. The cerium oxide polishing solution comprises the following components in percentage by mass: 0.1%-10% of cerium oxide grinding particles, 0.1%-5% of a polishing inhibitor, 0.01%-5% of a dispersing agent, 0.01%-2% of a pH regulator, 50-500 ppm of an anionic surfactant and water. According to the cerium oxide polishing solution, the removal rate of the polishing solution can be controlled and regulated, and the loss of trench oxides is reduced; compared with a silicon nitride film, the silicon nitride film can selectively remove the silicon oxide film, and has a good application prospect. The method has the advantages that the silicon oxide film can be selectively removed, the removal rate of SiO2 can be reduced, and the dishing amount of the groove part in a 100 mu m / 100 mu m area can be reduced.

Provided is a method for etching a silicon nitride film with high accuracy and high selectivity with respect to a silicon oxide film, while preventing deterioration of the shape of a silicon oxide film portion during etching. A dry etching method according to the present invention is used for etching a film structure that is formed in advance on a wafer disposed in a processing chamber, and that is configured such that an end portion of a film layer obtained by laminating a silicon nitride film so as to be vertically sandwiched by silicon oxide films constitutes a side wall of a groove or a hole, in a state in which a gas for processing is supplied into the processing chamber and no plasma is used, wherein: the method comprises (a) a step for reacting a hydrogen fluoride gas at a prescribed temperature to form a reaction layer on the silicon nitride film, (b) a step for channeling a gas of a polar solvent to process the reaction layer formed in step (a), and (c) a step for performing heating at a temperature higher than that in step (a) in a state in which no hydrogen fluoride gas is channeled and volatilizing the reaction layer formed in step (a) and processed in step (b) to remove the reaction layer; and steps (a) to (c) are repeated a plurality of times.

A substrate-treatment method includes (a) providing a substrate at a stage, the substrate including a silicon nitride-containing film, in which a recess defined by a top, a side wall, and a bottom is formed, and a silicon film exposed from the bottom of the recess; (b) forming a silicon oxide film along the recess; (c) exposing the silicon oxide film to a plasma of a process gas containing a hydrogen gas, thereby modifying the silicon oxide film at the top and bottom of the recess selectively relative to the side wall by an anisotropic plasma treatment; and (d) selectively removing the modified silicon oxide film at the top and bottom of the recess through chemical etching without using a plasma, thereby retaining the silicon oxide film at the side wall of the recess.

A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.

Provided is a method that allows for the etching of a silicon nitride film with respect to a silicon oxide film with high selectivity and high precision while preventing a degradation in the shape of the silicon oxide film portion during etching. The etching method of dry etching a film structure which is formed in advance on a wafer disposed in a processing chamber and in which an end portion of a film stack including a silicon nitride film and silicon oxide films vertically sandwiching the silicon nitride film forms a sidewall of a trench or hole, by supplying a gas for processing into the processing chamber, without using plasma includes: forming, as a first process, a reaction layer on the silicon nitride film by reaction of hydrogen fluoride gas at 30° C. or higher and 55° C. or lower; removing, thereafter, as a second process, the reaction layer having been formed in the first process, through volatilization by performing heating at 70° C. or higher and 110° C. or lower without causing the hydrogen fluoride gas to flow; and etching the silicon nitride film from the end portion in a lateral direction by performing the first and second processes a plurality of times.

The present invention relates to a polishing composition containing abrasive grains and a dispersing medium, in which a pH is less than 5.0, the abrasive grains are surface-modified silica particles in which an organic acid is immobilized on a surface thereof, a surface coverage of silanol groups present on the surface of the surface-modified silica particles is more than 0% and 6.0% or less, and an average primary particle diameter of the abrasive grains is 20 nm or more and 100 nm or less. According to the present invention, there is provided a means capable of improving a polishing removal rate of a silicon oxide film and polishing a silicon oxide film and a silicon nitride film at the substantially same rate.

A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.

The invention relates to the technical field of solar cells, and particularly discloses a method for improving UV attenuation of an N-type crystalline silicon solar cell and the N-type crystalline silicon solar cell. The method comprises the following steps: depositing an aluminum oxide film layer on the surface of N-type crystalline silicon; then, bombardment gas is adopted for conducting gas ionization bombardment treatment on the surface of the aluminum oxide film layer, and the bombardment gas is one or more combinations of laughing gas and rare gas and at least comprises laughing gas; and finally depositing a silicon nitride film layer. The laughing gas ionization bombardment can form a more compact aluminum nitride or aluminum oxynitride hydrogen blocking layer and release hydrogen, and the rare gas ionization bombardment can increase the negative charge density of the aluminum oxide film layer. Silicon nitride deposition, silk-screen printing, sintering and light injection processes do not need to be adjusted, no negative influence is caused on the short-circuit current and contact resistivity of the cell, the field passivation effect can be improved while the hydrogen passivation proportion is reduced, UV attenuation is effectively improved, and the full-life-cycle power generation amount of the cell is improved.

The invention discloses a workpiece with a diamond-like carbon film. The workpiece comprises a base material, a first diamond-like carbon film layer, a silicon nitride film layer, a second diamond-like carbon film layer and an elastomer layer, the first-type diamond film layer is arranged on the base material, the silicon nitride film layer is arranged on the first-type diamond film layer, the second-type diamond film layer is arranged on the silicon nitride film layer, the first-type diamond film layer, the silicon nitride film layer and the second-type diamond film layer form a diamond-like composite film structure, and the elastomer layer is arranged on the second-type diamond film layer. In addition, the ratio of the total thickness of the first diamond-like carbon film layer, the silicon nitride film layer and the second diamond-like carbon film layer to the thickness of the elastomer layer is 11: 10-29: 15, so that the elastomer layer can play a good role in improving the bending performance of the diamond-like carbon composite film structure.

The invention discloses application of a cerium oxide polishing solution. The cerium oxide polishing solution is applied to a chemical mechanical polishing process in integrated circuit manufacturing and comprises the following components in percentage by mass: 0.1%-10% of cerium oxide grinding particles, 0.1%-5% of a light inhibitor, 0.01%-5% of a dispersing agent, 0.01%-2% of a pH regulator, 50-500 ppm of an anionic surfactant and water. According to the cerium oxide polishing solution, the removal rate of the polishing solution can be controlled and regulated, and the loss of trench oxides is reduced; compared with a silicon nitride film, the silicon nitride film can selectively remove the silicon oxide film, and has a good application prospect. The method has the advantages that the silicon oxide film can be selectively removed, the removal rate of SiO2 can be reduced, and the dishing amount of the groove part in a 100 mu m / 100 mu m area can be reduced.

A silicon carbide semiconductor device includes an n-type epitaxial layer provided on a SiC substrate, a front surface electrode provided on the epitaxial layer, and a p-type electric field relieving region provided in the upper layer of the epitaxial layer in a terminal region. On the epitaxial layer, a first protective film composed of an interlayer insulating film and a protective oxide film that covers at least a part of the electric field relieving region is provided. A second protective film composed of a polyimide protective film is provided via a silicon nitride film so as to cover the outer end portion of the surface electrode, the first protective film, and at least a part of the epitaxial layer. The silicon nitride film protrudes from the second protective film at both an inner side end portion and an outer side end portion.

A substrate processing method according to the present disclosure comprises: a silicidation step in which a processing gas is supplied to a substrate that is provided with a recess in which the bottom wall is formed of a silicon-containing layer and the side wall is formed of a silicon nitride film, and a metal silicide film is formed on the surface of the silicon-containing layer; a nitriding step in which a nitriding gas is supplied to the substrate so as to nitride the surface of the metal silicide film and a first metal film that is formed on the side wall of the recess so as to cover the silicon nitride film in the silicidation step; an etching step in which an etching gas is supplied to the substrate so as to remove the first metal film; and a film formation step in which a film formation gas is supplied to the substrate so as to fill the recess with a second metal film.

The present invention specifically discloses a PECVD process for improving the film explosion of TOPCON batteries, comprising the following steps: (1) placing a graphite boat filled with silicon wafers in a furnace tube; (2) filling the furnace tube with nitrogen for protection; (3) performing step-by-step heating and constant-temperature hydrogen passivation treatment; (4) evacuating the furnace tube; (5) introducing NH3 and N2O into the furnace tube for ionization; (6) depositing silicon nitride; (7) evacuating the furnace tube and filling the furnace tube with nitrogen to return to atmospheric pressure; and (8) transporting the graphite boat out of the furnace tube. The present invention effectively reduces the film explosion rate of TOPCon batteries during the preparation process and improves the efficiency of the battery; in particular, by step-by-step heating and adding nitrous oxide and ammonia ionization before the silicon nitride film layer, N-H bonds are formed inside the film layer, thereby reducing hydrogen overflow and improving film explosion, thereby achieving a better hydrogen passivation effect.

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

The application discloses a two-dimensional metal organic framework nanopore sensor and a preparation method and application thereof. The two-dimensional metal organic framework nanopore sensor comprises a two-dimensional metal organic framework film with first nanopores, a silicon nitride film with second nanopores and a silicon substrate which are sequentially stacked, the two-dimensional metal organic framework film is formed through liquid-liquid interface force self-assembly and is transferred in situ to the silicon nitride film to form. The two-dimensional nanopore film material adopted by the application is a metal organic framework of a porphyrin organic ligand, the hydrophobic porphyrin ligand has high affinity with DNA molecules and can interact with the DNA molecules, so that the speed of the DNA passing through the two-dimensional nanopore is slowed down, the problem of fast pore passing speed when the two-dimensional nanopore sensor detects and distinguishes short-chain DNA is solved, and the time resolution capability of the two-dimensional nanopore is greatly improved under the premise of guaranteeing high spatial resolution of the two-dimensional nanopore.

A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left. In the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film and the second silicon oxide film are etched together.

The invention relates to a solar cell which comprises a passivation anti-reflection film structure, the passivation anti-reflection film structure comprises an aluminum oxide film and at least one layer of silicon nitride film which are sequentially laminated from inside to outside, the thickness of the aluminum oxide film is larger than or equal to 5 nm, a layer of first silicon nitride film exists in the silicon nitride film, and the refractive index of the first silicon nitride film is larger than or equal to 2.3; moreover, when the thickness of the aluminum oxide film is increased by 1 nm, the refractive index of the first silicon nitride film is increased by 0.03-0.06. According to the solar cell passivation anti-reflection film structure provided by the invention, the solar cell passivation interface loss caused by ultraviolet radiation can be improved, the attenuation rate of 50kWh ultraviolet radiation is less than 1%, the light radiation stability of the solar cell is greatly improved, and the photoelectric conversion efficiency of the solar cell is effectively guaranteed.

A WDS microprobe optimized for lithium detection in a sample, comprising a Castaing microprobe coupled to a WDS spectrometer. It includes: a multilayer pseudocrystal having a spectral range including the emission wavelengths of lithium in its metallic form and in at least one of its oxide forms; a first and a second separation window disposed respectively at an interface between the WDS spectrometer and the chamber, and at an input of a proportional counter; each window being a silicon nitride film, 18 nm to 22 nm thick; each silicon nitride film being supported by a polycrystalline silicon grid, with a thickness between 7.5 µm and 8.5 µm, deposited on one face of the silicon nitride film;The silicon nitride film of the second separation window further comprises an aluminum film, with a thickness between 1 nm and 2 nm, deposited on the other side of the silicon nitride film; when the sample is bombarded by the electron beam, the WDS spectrometer is intended to be maintained at a pressure below 9.1 x 10⁻¹ Pa and the Castaing microprobe chamber is intended to be maintained at a pressure between 9.3 x 10⁻⁵ Pa and 2.5 x 10⁻⁵ Pa; a means for protecting the first separation window from overpressure or underpressure during the introduction or removal of the sample from the Castaing microprobe chamber. Figure for abstract: none.

The invention relates to a preparation method of a perovskite-TOPCon laminated cell with local silver electrode interconnection, which comprises the following steps: by taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, boron diffusion, high-temperature oxidation, etching and polishing, thin film preparation (a tunneling oxide layer, a polycrystalline silicon layer and a silicon nitride film), and silk-screen printing and sintering to form a back metal electrode and a front local silver electrode interconnection layer; and preparing an ITO contact conductive layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, an ITO transparent conductive layer and a front metal electrode in sequence to obtain the perovskite-TOPCon laminated cell. According to the invention, the problems of back corrosion risk caused by corrosion of a front silicon nitride film with an HF solution, effective area loss caused by edge cutting, tedious process, poor passivation performance, low conversion efficiency and the like in existing perovskite-TOPCon laminated cell preparation are solved, full-size manufacturing is realized, the process is simplified, the performance is improved, and industrialization is facilitated.

A substrate processing method is a method of performing an etching process on a substrate with an etching solution in a processing tank. The substrate includes silicon oxide films and silicon nitride films stacked alternately. The etching solution contains phosphoric acid. The substrate processing method includes immersing the substrate in the etching solution, and replenishing the etching solution in the processing tank with phosphoric acid during the etching process on the substrate to cause a silicon concentration in the etching solution to vary.

The invention provides a method of forming a coated nanopore in a silicon nitride membrane on a silica substrate, comprising (i)Depositing layers of SiNx on opposing surfaces of a sheet of a silica substrate to form opposed SiNx membranes; followed by steps (ii-a) and (iii-a), or (ii-b) and (iii-b): (ii-a) Removing a portion of one of the SiNx membranes and a portion of the silica substrate to form a cavity in the silica substrate which is open on one side and bounded by the opposed membrane of SiNx on the other; (iii-a) Forming a nanopore aperture through the opposed membrane of SiNx, in the region of the cavity to form a continuous channel; or (ii-b) Forming a nanopore aperture through one of the membranes of SiNx; (iii-b) Removing a portion of the other SiNx membrane and a portion of the silica substrate in the region of the nanopore aperture to form a cavity in the silica substrate in the form of a continuous channel; wherein steps (ii-a) and (iii-a) or (ii-b) and (iii-b) are followed by steps (iv) and (v): (iv) Forming a layer of SiO2 on exposed surfaces, including the surface of the nanopore aperture formed in step (iii) and the substrate surfaces; (v) Modifying the layer formed in (iv) by chemical or physical means. Chips comprising nanopores obtainable by this method, and uses in nanomedicine and resistive pulse sensing methods, are also provided.

A method of manufacturing a semiconductor device includes providing a bit line structure on a substrate, and the bit line structure is located between a pair of spacers containing air gaps. The method further includes depositing a silicon nitride film to seal the air gaps. Depositing the silicon nitride film includes providing gases from a showerhead into a process chamber. The showerhead and a wafer on a carrier have a first distance therebetween. Depositing the silicon nitride film further includes purging the process chamber, and lifting up the showerhead such that the first distance is increased to a second distance greater than the first distance.

The present invention belongs to the technical field of back-contact batteries, and specifically relates to a combined passivation back-contact battery and a preparation method thereof, comprising the following steps: S4, depositing a mask layer on a first semiconductor layer, the mask layer comprising a doped amorphous layer and a silicon nitride film layer formed in sequence, wherein the doping element of the doped amorphous layer is N or C; S5, forming a second semiconductor opening region arranged at intervals; S6, performing texturing and cleaning, simultaneously forming a velvet surface on the front side of the silicon wafer and the second semiconductor opening region, and removing a portion of the mask layer; S7, sequentially depositing a passivation layer and an anti-reflection layer on the front side of the silicon wafer; S8, performing a secondary cleaning to remove the wrap-around coating naturally formed on the back side during S7, followed by backwashing; S9, depositing a second semiconductor layer on the back side obtained in S8. The present invention can completely remove the wrap-around coating layer on the back side, thereby improving the open circuit voltage and short circuit current of the battery, thereby improving the battery efficiency.

The present invention relates to a slurry composition for chemical-mechanical polishing, wherein the polishing rate for a low dielectric film is higher than the polishing rate for a silicon nitride film.

The present invention relates to a silicon oxide film etching liquid composition comprising hydrogen fluoride (HF), ammonium fluoride (NH4F), (C4-C20) alkylamine, an amine-based oligomeric compound, and an organic acid, the composition being capable of selectively etching a silicon oxide film while minimizing damage to metal and insulating films such as a silicon nitride film and a silicon oxyfluoride film.

A plasma processing method includes: (a) providing a substrate having an etching target film including a silicon oxide film and a silicon nitride film, and a mask film defining an opening over the etching target film, on a substrate support in a chamber of a plasma processing apparatus; (b) generating a first plasma from a first processing gas including HF gas, CxFy gas (x and y are integers of 1 or more) or CsHtFu gas (s, t, and u are integers of 1 or more), and an oxygen-containing gas to etch the silicon nitride film; and (c) generating a second plasma from a second processing gas including HF gas, CvFw gas (v and w are integers of 1 or more), and an oxygen-containing gas to etch the silicon oxide film. In (b) and (c), a temperature of the substrate support is set to 0° C. or lower.

A method of filling gaps with a flowable oxide film is provided. In one embodiment of the disclosure, the method includes forming a flowable silicon nitride film and then converting the silicon nitride film to a silicon oxide film. The silicon nitride film can be formed by supplying a power-activated oligomeric silicon source and a nitrogen source. The silicon nitride film can be converted to a silicon oxide film by supplying an oxygen source while applying vacuum UV radiation. The vacuum UV radiation can be applied in a pulsed mode.