252 results about "Silicon nitride membrane" patented technology

The present disclosure relates to methods for providing a silicon nitride film. In particular, the film can be a carbon-doped, silicon nitride film. Methods can include depositing a doped silicon nitride and then plasma treating the doped silicon nitride to provide a conformal film.

A high-stress, thermally-stable compressive nitride film is deposited on a semiconductor substrate. The compressive nitride film may be deposited by plasma-enhanced chemical vapor deposition (PECVD) under conditions that produce a compressive nitride film with high compressive film stress and with a minimal stress shift when exposed to a temperature greater than a deposition temperature of the compressive nitride film. In some implementations, the compressive nitride film is a silicon nitride film. The PECVD conditions may reduce a number of Si—H bonds in the silicon nitride to obtain improved thermal stability. In some implementations, the high-stress, thermally-stable nitride film is deposited on a backside of the semiconductor substrate for wafer bow compensation.

An acoustic wave device includes a silicon support substrate, a silicon nitride film on the support substrate, a silicon oxide film on the silicon nitride film, a piezoelectric layer on the silicon oxide film and using Y-cut X-SAW propagation lithium tantalate, and an IDT electrode on the piezoelectric layer. A film thickness of the piezoelectric layer is equal to or less than about 1λ, Euler angles of the piezoelectric layer are (0±5°, θ, 0±5°) or (0±5°, θ, 180±5°), θ in the Euler angles of the piezoelectric layer is about 95.5°≤θ<117.5° or about −84.5°≤θ<−62.5°, and a relationship between θ in the Euler angles of the piezoelectric layer and a film thickness of the silicon nitride film is a combination shown in Table 1 or Table 2.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

A substrate-processing method is provided for filling a recess formed in a surface of a substrate with a silicon nitride film. The substrate-processing method includes: a) repeating a cycle that includes i) supplying a silicon precursor gas to form an adsorption layer on the substrate, ii) supplying a nitrogen-containing gas to cause nitriding of the adsorption layer, and iii) supplying a helium-containing gas and generating helium plasma in a processing chamber to expose the substrate to the helium plasma, thereby forming an adsorption inhibition region on the substrate; and b) changing conditions for generating the helium plasma according to an increase in a number of the cycles repeated.

Even when used for polishing a semiconductor wafer provided with a silicon nitride film, there is provided sulfonic acid-modified colloidal silica capable of forming a highly flat polished surface at high speed. Sulfonic acid-modified colloidal silica, wherein the sulfur content of the silica particles is 700 mass ppm or more and less than 3000 mass ppm per 1 g of the silica particles, the sulfur content in the solvent is 250 mass ppm or less per 1 g of the solvent, and the content of coarse particles having a particle size of 0.2 μm or more contained in the silica particles is 10,000,000 particles / mL or less when the silica particle concentration is 1 mass%.

Provided are a method and an apparatus for forming a silicon nitride film. A method for forming a silicon nitride film on a substrate housed in a processing chamber, the method comprising: a step (a) in which a gas containing a silicon halide gas is supplied into the processing chamber without supplying high-frequency power; a step (b) in which, after the step (a), the supply of the gas containing the silicon halide gas is stopped, and the inside of the processing chamber is exhausted; a step (c), after the step (b), supplying a nitrogen-containing gas into the processing chamber; a step (d), after the steps (c), for generating plasma by supplying high-frequency power into the processing chamber; after the steps (e) and (d), stopping the supply of the nitrogen-containing gas and the supply of the high-frequency power, and exhausting the inside of the processing chamber; and repeating the steps of (a) to (e) for X times (X > = 1) until a silicon nitride film having a predetermined film thickness is formed, wherein the substrate temperature is controlled to 100 DEG C or less in the steps (a) to (e).

The invention discloses a cerium oxide polishing solution. The cerium oxide polishing solution comprises the following components in percentage by mass: 0.1%-10% of cerium oxide grinding particles, 0.1%-5% of a polishing inhibitor, 0.01%-5% of a dispersing agent, 0.01%-2% of a pH regulator, 50-500 ppm of an anionic surfactant and water. According to the cerium oxide polishing solution, the removal rate of the polishing solution can be controlled and regulated, and the loss of trench oxides is reduced; compared with a silicon nitride film, the silicon nitride film can selectively remove the silicon oxide film, and has a good application prospect. The method has the advantages that the silicon oxide film can be selectively removed, the removal rate of SiO2 can be reduced, and the dishing amount of the groove part in a 100 mu m / 100 mu m area can be reduced.

Provided is a method for etching a silicon nitride film with high accuracy and high selectivity with respect to a silicon oxide film, while preventing deterioration of the shape of a silicon oxide film portion during etching. A dry etching method according to the present invention is used for etching a film structure that is formed in advance on a wafer disposed in a processing chamber, and that is configured such that an end portion of a film layer obtained by laminating a silicon nitride film so as to be vertically sandwiched by silicon oxide films constitutes a side wall of a groove or a hole, in a state in which a gas for processing is supplied into the processing chamber and no plasma is used, wherein: the method comprises (a) a step for reacting a hydrogen fluoride gas at a prescribed temperature to form a reaction layer on the silicon nitride film, (b) a step for channeling a gas of a polar solvent to process the reaction layer formed in step (a), and (c) a step for performing heating at a temperature higher than that in step (a) in a state in which no hydrogen fluoride gas is channeled and volatilizing the reaction layer formed in step (a) and processed in step (b) to remove the reaction layer; and steps (a) to (c) are repeated a plurality of times.

Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a vacuum UV radiation. The vacuum UV radiation may be applied in a pulsed mode.

A substrate-treatment method includes (a) providing a substrate at a stage, the substrate including a silicon nitride-containing film, in which a recess defined by a top, a side wall, and a bottom is formed, and a silicon film exposed from the bottom of the recess; (b) forming a silicon oxide film along the recess; (c) exposing the silicon oxide film to a plasma of a process gas containing a hydrogen gas, thereby modifying the silicon oxide film at the top and bottom of the recess selectively relative to the side wall by an anisotropic plasma treatment; and (d) selectively removing the modified silicon oxide film at the top and bottom of the recess through chemical etching without using a plasma, thereby retaining the silicon oxide film at the side wall of the recess.

A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.

Provided is a method that allows for the etching of a silicon nitride film with respect to a silicon oxide film with high selectivity and high precision while preventing a degradation in the shape of the silicon oxide film portion during etching. The etching method of dry etching a film structure which is formed in advance on a wafer disposed in a processing chamber and in which an end portion of a film stack including a silicon nitride film and silicon oxide films vertically sandwiching the silicon nitride film forms a sidewall of a trench or hole, by supplying a gas for processing into the processing chamber, without using plasma includes: forming, as a first process, a reaction layer on the silicon nitride film by reaction of hydrogen fluoride gas at 30° C. or higher and 55° C. or lower; removing, thereafter, as a second process, the reaction layer having been formed in the first process, through volatilization by performing heating at 70° C. or higher and 110° C. or lower without causing the hydrogen fluoride gas to flow; and etching the silicon nitride film from the end portion in a lateral direction by performing the first and second processes a plurality of times.

An object of the invention is to provide a plasma processing method for preventing generation of deposition from an underlying metal film and attaining an anisotropic shape in hard mask etching. The plasma processing method for forming a mask using a film to be etched whose underlying layer is a metal film according to the invention includes: a first step of etching, using a plasma generated by mixed gas containing O2 gas, CHF3 gas, NF3 gas, Ar gas, and He gas, while supplying pulse-modulated radio frequency power to a sample stage on which a sample having the film to be etched is placed; and a second step of etching while supplying continuous wave (CW) radio frequency power to the sample stage after the first step. The film to be etched is a TEOS film and a silicon nitride film, and the continuous wave (CW) radio frequency power is smaller than a product of the pulse-modulated radio frequency power and a pulse-modulated duty ratio and is smaller than 50 W.

The present invention relates to a polishing composition containing abrasive grains and a dispersing medium, in which a pH is less than 5.0, the abrasive grains are surface-modified silica particles in which an organic acid is immobilized on a surface thereof, a surface coverage of silanol groups present on the surface of the surface-modified silica particles is more than 0% and 6.0% or less, and an average primary particle diameter of the abrasive grains is 20 nm or more and 100 nm or less. According to the present invention, there is provided a means capable of improving a polishing removal rate of a silicon oxide film and polishing a silicon oxide film and a silicon nitride film at the substantially same rate.

The invention belongs to the technical field of back contact batteries, and discloses a preparation method of a back contact battery anti-reflection film for improving silicon nitride dust. The method comprises the following steps: feeding a silicon wafer into PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, sequentially heating, keeping constant temperature, vacuumizing and keeping constant pressure, introducing ammonia gas for ionization, vacuumizing after ionization is finished, and completing pre-film cleaning of the silicon wafer; sequentially depositing three layers of silicon nitride films; and finally, nitrogen is introduced for membrane back-blowing. Before the silicon nitride film layer is deposited, the ionized ammonia gas is used for performing pre-film cleaning on the silicon wafer, so that the problem of dust particulate matter pollution before deposition can be effectively improved; after the three silicon nitride film layers are deposited, nitrogen is introduced to perform post-film purging and cleaning on the silicon wafer, so that the post-film dust particulate matter pollution problem can be effectively improved.

A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.

The invention relates to the technical field of solar cells, and particularly discloses a method for improving UV attenuation of an N-type crystalline silicon solar cell and the N-type crystalline silicon solar cell. The method comprises the following steps: depositing an aluminum oxide film layer on the surface of N-type crystalline silicon; then, bombardment gas is adopted for conducting gas ionization bombardment treatment on the surface of the aluminum oxide film layer, and the bombardment gas is one or more combinations of laughing gas and rare gas and at least comprises laughing gas; and finally depositing a silicon nitride film layer. The laughing gas ionization bombardment can form a more compact aluminum nitride or aluminum oxynitride hydrogen blocking layer and release hydrogen, and the rare gas ionization bombardment can increase the negative charge density of the aluminum oxide film layer. Silicon nitride deposition, silk-screen printing, sintering and light injection processes do not need to be adjusted, no negative influence is caused on the short-circuit current and contact resistivity of the cell, the field passivation effect can be improved while the hydrogen passivation proportion is reduced, UV attenuation is effectively improved, and the full-life-cycle power generation amount of the cell is improved.

The invention discloses a workpiece with a diamond-like carbon film. The workpiece comprises a base material, a first diamond-like carbon film layer, a silicon nitride film layer, a second diamond-like carbon film layer and an elastomer layer, the first-type diamond film layer is arranged on the base material, the silicon nitride film layer is arranged on the first-type diamond film layer, the second-type diamond film layer is arranged on the silicon nitride film layer, the first-type diamond film layer, the silicon nitride film layer and the second-type diamond film layer form a diamond-like composite film structure, and the elastomer layer is arranged on the second-type diamond film layer. In addition, the ratio of the total thickness of the first diamond-like carbon film layer, the silicon nitride film layer and the second diamond-like carbon film layer to the thickness of the elastomer layer is 11: 10-29: 15, so that the elastomer layer can play a good role in improving the bending performance of the diamond-like carbon composite film structure.

The invention discloses application of a cerium oxide polishing solution. The cerium oxide polishing solution is applied to a chemical mechanical polishing process in integrated circuit manufacturing and comprises the following components in percentage by mass: 0.1%-10% of cerium oxide grinding particles, 0.1%-5% of a light inhibitor, 0.01%-5% of a dispersing agent, 0.01%-2% of a pH regulator, 50-500 ppm of an anionic surfactant and water. According to the cerium oxide polishing solution, the removal rate of the polishing solution can be controlled and regulated, and the loss of trench oxides is reduced; compared with a silicon nitride film, the silicon nitride film can selectively remove the silicon oxide film, and has a good application prospect. The method has the advantages that the silicon oxide film can be selectively removed, the removal rate of SiO2 can be reduced, and the dishing amount of the groove part in a 100 mu m / 100 mu m area can be reduced.

A silicon carbide semiconductor device includes an n-type epitaxial layer provided on a SiC substrate, a front surface electrode provided on the epitaxial layer, and a p-type electric field relieving region provided in the upper layer of the epitaxial layer in a terminal region. On the epitaxial layer, a first protective film composed of an interlayer insulating film and a protective oxide film that covers at least a part of the electric field relieving region is provided. A second protective film composed of a polyimide protective film is provided via a silicon nitride film so as to cover the outer end portion of the surface electrode, the first protective film, and at least a part of the epitaxial layer. The silicon nitride film protrudes from the second protective film at both an inner side end portion and an outer side end portion.

A substrate processing method according to the present disclosure comprises: a silicidation step in which a processing gas is supplied to a substrate that is provided with a recess in which the bottom wall is formed of a silicon-containing layer and the side wall is formed of a silicon nitride film, and a metal silicide film is formed on the surface of the silicon-containing layer; a nitriding step in which a nitriding gas is supplied to the substrate so as to nitride the surface of the metal silicide film and a first metal film that is formed on the side wall of the recess so as to cover the silicon nitride film in the silicidation step; an etching step in which an etching gas is supplied to the substrate so as to remove the first metal film; and a film formation step in which a film formation gas is supplied to the substrate so as to fill the recess with a second metal film.

The present invention specifically discloses a PECVD process for improving the film explosion of TOPCON batteries, comprising the following steps: (1) placing a graphite boat filled with silicon wafers in a furnace tube; (2) filling the furnace tube with nitrogen for protection; (3) performing step-by-step heating and constant-temperature hydrogen passivation treatment; (4) evacuating the furnace tube; (5) introducing NH3 and N2O into the furnace tube for ionization; (6) depositing silicon nitride; (7) evacuating the furnace tube and filling the furnace tube with nitrogen to return to atmospheric pressure; and (8) transporting the graphite boat out of the furnace tube. The present invention effectively reduces the film explosion rate of TOPCon batteries during the preparation process and improves the efficiency of the battery; in particular, by step-by-step heating and adding nitrous oxide and ammonia ionization before the silicon nitride film layer, N-H bonds are formed inside the film layer, thereby reducing hydrogen overflow and improving film explosion, thereby achieving a better hydrogen passivation effect.

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

The application discloses a two-dimensional metal organic framework nanopore sensor and a preparation method and application thereof. The two-dimensional metal organic framework nanopore sensor comprises a two-dimensional metal organic framework film with first nanopores, a silicon nitride film with second nanopores and a silicon substrate which are sequentially stacked, the two-dimensional metal organic framework film is formed through liquid-liquid interface force self-assembly and is transferred in situ to the silicon nitride film to form. The two-dimensional nanopore film material adopted by the application is a metal organic framework of a porphyrin organic ligand, the hydrophobic porphyrin ligand has high affinity with DNA molecules and can interact with the DNA molecules, so that the speed of the DNA passing through the two-dimensional nanopore is slowed down, the problem of fast pore passing speed when the two-dimensional nanopore sensor detects and distinguishes short-chain DNA is solved, and the time resolution capability of the two-dimensional nanopore is greatly improved under the premise of guaranteeing high spatial resolution of the two-dimensional nanopore.

A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left. In the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film and the second silicon oxide film are etched together.

The invention relates to a solar cell which comprises a passivation anti-reflection film structure, the passivation anti-reflection film structure comprises an aluminum oxide film and at least one layer of silicon nitride film which are sequentially laminated from inside to outside, the thickness of the aluminum oxide film is larger than or equal to 5 nm, a layer of first silicon nitride film exists in the silicon nitride film, and the refractive index of the first silicon nitride film is larger than or equal to 2.3; moreover, when the thickness of the aluminum oxide film is increased by 1 nm, the refractive index of the first silicon nitride film is increased by 0.03-0.06. According to the solar cell passivation anti-reflection film structure provided by the invention, the solar cell passivation interface loss caused by ultraviolet radiation can be improved, the attenuation rate of 50kWh ultraviolet radiation is less than 1%, the light radiation stability of the solar cell is greatly improved, and the photoelectric conversion efficiency of the solar cell is effectively guaranteed.

A WDS microprobe optimized for lithium detection in a sample, comprising a Castaing microprobe coupled to a WDS spectrometer. It includes: a multilayer pseudocrystal having a spectral range including the emission wavelengths of lithium in its metallic form and in at least one of its oxide forms; a first and a second separation window disposed respectively at an interface between the WDS spectrometer and the chamber, and at an input of a proportional counter; each window being a silicon nitride film, 18 nm to 22 nm thick; each silicon nitride film being supported by a polycrystalline silicon grid, with a thickness between 7.5 µm and 8.5 µm, deposited on one face of the silicon nitride film;The silicon nitride film of the second separation window further comprises an aluminum film, with a thickness between 1 nm and 2 nm, deposited on the other side of the silicon nitride film; when the sample is bombarded by the electron beam, the WDS spectrometer is intended to be maintained at a pressure below 9.1 x 10⁻¹ Pa and the Castaing microprobe chamber is intended to be maintained at a pressure between 9.3 x 10⁻⁵ Pa and 2.5 x 10⁻⁵ Pa; a means for protecting the first separation window from overpressure or underpressure during the introduction or removal of the sample from the Castaing microprobe chamber. Figure for abstract: none.

The invention relates to a preparation method of a perovskite-TOPCon laminated cell with local silver electrode interconnection, which comprises the following steps: by taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, boron diffusion, high-temperature oxidation, etching and polishing, thin film preparation (a tunneling oxide layer, a polycrystalline silicon layer and a silicon nitride film), and silk-screen printing and sintering to form a back metal electrode and a front local silver electrode interconnection layer; and preparing an ITO contact conductive layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, an ITO transparent conductive layer and a front metal electrode in sequence to obtain the perovskite-TOPCon laminated cell. According to the invention, the problems of back corrosion risk caused by corrosion of a front silicon nitride film with an HF solution, effective area loss caused by edge cutting, tedious process, poor passivation performance, low conversion efficiency and the like in existing perovskite-TOPCon laminated cell preparation are solved, full-size manufacturing is realized, the process is simplified, the performance is improved, and industrialization is facilitated.