43 results about "Silicon nitride membrane" patented technology

Provided is a method that allows for the etching of a silicon nitride film with respect to a silicon oxide film with high selectivity and high precision while preventing a degradation in the shape of the silicon oxide film portion during etching. The etching method of dry etching a film structure which is formed in advance on a wafer disposed in a processing chamber and in which an end portion of a film stack including a silicon nitride film and silicon oxide films vertically sandwiching the silicon nitride film forms a sidewall of a trench or hole, by supplying a gas for processing into the processing chamber, without using plasma includes: forming, as a first process, a reaction layer on the silicon nitride film by reaction of hydrogen fluoride gas at 30° C. or higher and 55° C. or lower; removing, thereafter, as a second process, the reaction layer having been formed in the first process, through volatilization by performing heating at 70° C. or higher and 110° C. or lower without causing the hydrogen fluoride gas to flow; and etching the silicon nitride film from the end portion in a lateral direction by performing the first and second processes a plurality of times.

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

The application discloses a two-dimensional metal organic framework nanopore sensor and a preparation method and application thereof. The two-dimensional metal organic framework nanopore sensor comprises a two-dimensional metal organic framework film with first nanopores, a silicon nitride film with second nanopores and a silicon substrate which are sequentially stacked, the two-dimensional metal organic framework film is formed through liquid-liquid interface force self-assembly and is transferred in situ to the silicon nitride film to form. The two-dimensional nanopore film material adopted by the application is a metal organic framework of a porphyrin organic ligand, the hydrophobic porphyrin ligand has high affinity with DNA molecules and can interact with the DNA molecules, so that the speed of the DNA passing through the two-dimensional nanopore is slowed down, the problem of fast pore passing speed when the two-dimensional nanopore sensor detects and distinguishes short-chain DNA is solved, and the time resolution capability of the two-dimensional nanopore is greatly improved under the premise of guaranteeing high spatial resolution of the two-dimensional nanopore.

A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left. In the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film and the second silicon oxide film are etched together.

The present invention relates to a silicon oxide film etching liquid composition comprising hydrogen fluoride (HF), ammonium fluoride (NH4F), (C4-C20) alkylamine, an amine-based oligomeric compound, and an organic acid, the composition being capable of selectively etching a silicon oxide film while minimizing damage to metal and insulating films such as a silicon nitride film and a silicon oxyfluoride film.

A method of filling gaps with a flowable oxide film is provided. In one embodiment of the disclosure, the method includes forming a flowable silicon nitride film and then converting the silicon nitride film to a silicon oxide film. The silicon nitride film can be formed by supplying a power-activated oligomeric silicon source and a nitrogen source. The silicon nitride film can be converted to a silicon oxide film by supplying an oxygen source while applying vacuum UV radiation. The vacuum UV radiation can be applied in a pulsed mode.

Halosilyl-substituted cyclic silicon precursor compounds have a carbon-to-silicon ratio of at least 2: 1, and are defined by Formula I herein. A method of forming a film comprising silicon and oxygen and having a carbon content ranging from 10 at.% to 50 at.% by a thermal ALD process includes placing one or more substrates comprising surface features into a reactor; heating the reactor to one or more temperatures in the range of ambient temperature to about 600 DEG C and optionally maintaining the reactor at a pressure of 100 torr or less; introducing into the reactor at least one silicon precursor according to formula I; purging with inert gas; providing a nitrogen source into the reactor to react with the surface to form a carbon-doped silicon nitride film, purging with an inert gas to remove reaction by-products, repeating the steps to provide a carbon-doped silicon nitride film of a desired thickness, treating the resulting carbon-doped silicon nitride film with an oxygen source at one or more temperatures ranging from about ambient temperature to 1000 DEG C or from about 100 DEG C to 400 DEG C to convert the carbon-doped silicon nitride film to a carbon-doped silicon oxide film; and exposing the carbon-doped silicon oxide film to a plasma comprising hydrogen.

Provided is a polishing composition that can polish a carbon film at a high polishing removal rate, and can polish the carbon film at a high polishing removal rate with respect to a polishing removal rate of a silicon nitride film. A polishing composition, containing an anion-modified silica particle; a nonionic surfactant; and an anionic polymer, wherein a pH of the polishing composition is 1.0 or more and 5.0 or less.

To provide a semiconductor device that can suppress the degradation of its characteristics. [Solution] The semiconductor device comprises a semiconductor substrate, a source region and a drain region arranged with a gap between them on the upper surface of the semiconductor substrate, a body region arranged between the source region and the drain region, a drift region arranged between the body region and the drain region, a gate insulating film provided on the body region, a gate electrode provided on the gate insulating film, an insulating film provided on the drift region, a silicon oxynitride film provided on the insulating film, and a silicon nitride film provided on the silicon oxynitride film.

This invention relates to the field of photomask technology, and in particular to a photomask with an isolation layer. The photomask includes a base layer, a pattern layer on top of the base layer, and an isolation layer on top of the pattern layer. The isolation layer includes a silicon nitride film layer, a diamond carbon film layer bonded to the top of the silicon nitride film layer, and a silicon oxide reflective film layer bonded to the top of the diamond carbon film layer. This invention significantly improves the corrosion resistance and high-temperature resistance of the photomask, providing more comprehensive and reliable protection for the pattern layer. It effectively resists various corrosive factors in the process environment, extends the service life of the photomask, and reduces production costs. By setting the silicon oxide reflective film layer, it can achieve efficient anti-reflection for light within the wavelength range of the photolithography light source, greatly reducing reflection loss and interference during light transmission, allowing the pattern to be transferred more accurately onto the base layer, meeting the requirements of high-precision photolithography processes.

This application relates to a solar cell and its fabrication method, a tandem solar cell, and a photovoltaic module. The fabrication method of the solar cell includes: providing a cell body and a conductive material; printing the conductive material onto the cell body; sintering and laser processing the cell body to form electrodes; wherein the conductive material includes silver powder, glass powder, and additives, and the additives include bismuth oxide or antimony oxide. The technical solution of this application has at least the following advantages: precise interface control: through a unique glass system design, "gentle yet effective" etching of the silicon nitride film is achieved. This ensures reliable ohmic contact formation while effectively protecting the underlying shallow junction n+ emitter, significantly reducing the parallel resistance (Rsh) and leakage current of the TOPCon cell, and improving the open-circuit voltage (Voc) and short-circuit current (Isc).

The invention discloses low-radiation anti-reflection coated glass for an automobile skylight and a preparation method of the low-radiation anti-reflection coated glass, and belongs to the technical field of vacuum magnetron sputtering coated glass. The coated glass comprises a glass substrate layer and five coating layers sequentially deposited on the surface of the glass substrate layer through a vacuum magnetron sputtering method, wherein the five coating layers sequentially comprise a first silicon nitride film layer, a second silicon oxide film layer, a third indium tin oxide film layer, a fourth silicon oxide film layer and a fifth zirconium oxide film layer from inside to outside; wherein the outer surface of the coating layer is in a 25 [mu] m < 2 > measurement area, the surface average roughness Ra is greater than 1.5 nm, and the root-mean-square roughness Rq is greater than 1.5 nm. The high-hardness and high-toughness zirconium oxide film layer is combined with the compact and stable silicon oxide film layer, and the optical refractive index of each film layer material is optimized, so that the reflection and transmission characteristics of visible light are effectively regulated and controlled, the wear resistance and chemical stability of the film layers are improved, and meanwhile, low radiation, low reflection and good temperable performance are considered.

A film forming method includes forming a silicon nitride film in a recess in a substrate surface. Forming of the silicon nitride film includes: supplying an adsorption-inhibiting gas for inhibiting adsorption of a silicon-containing gas to the substrate surface in a form of a plasma; supplying the silicon-containing gas to the substrate surface; and supplying a nitriding gas for nitriding an adsorbate of the silicon-containing gas to the substrate surface in a form of a plasma. Nitriding gas contains N2 gas. Forming of the silicon nitride film includes supplying an adsorption-promoting gas for promoting adsorption of the silicon-containing gas to the substrate surface. Performing a process: including supplying of the adsorption-inhibiting gas; supplying of the silicon-containing gas; and supplying of the nitriding gas one or more times, and performing supplying of the adsorption-promoting gas one or more times are performed a plurality of times repeatedly.

A method for fabricating a MEMS thermoelectric device based on a phonon crystal includes: S1, etching a thermoelectric conversion structure (100) on the top silicon layer of an SOI substrate, the thermoelectric conversion structure (100) including a connecting portion and two ends connected to both ends of the connecting portion; S2, growing a silicon nitride film (102) on the upper surface of the structure obtained in step S1; S3, etching the silicon nitride film (102) to form a support arm and a support island; S4, depositing a first metal (103) on the support island and etching the first metal (104)... S3) Form a metal pattern; S5) Deposit a second metal (104) on the support arm and make the second metal (104) form an ohmic contact with the top silicon through an annealing process; S6) Prepare a phononic crystal at the connection of the thermoelectric conversion structure (100); S7) Grow a mask layer on the upper surface of the structure obtained in step S6 and the lower surface of the SOI substrate; S8) Etch the buried oxide layer (101) from the lower surface to the SOI substrate; S9) Remove the buried oxide layer (101); S10) Remove the mask layer on the upper surface.

An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates and low oxide trench dishing and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-and-fluorine containing compound; and at least one of non-ionic organic molecule having more than one hydroxyl functional group.

A substrate processing method according to the present application is a method of processing a substrate in which films including a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are stacked from the outermost side, and includes a first etching step of etching the first silicon oxide film and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left, and in the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film, and the second silicon oxide film are etched uniformly. The present application has an effect of etching the silicon nitride film and the silicon oxide film of an etching target region uniformly and, on the other hand, protecting the films of a non-etching target region.

Described examples include an integrated circuit that includes a trench extending into a semiconductor substrate. A silicon nitride body is located within the trench. A polysilicon electrode extends over the silicon nitride body, and a silicon oxynitride layer is located between the silicon nitride body and the polysilicon electrode.

This invention discloses a method for preparing a low-stress DLC film, comprising: pretreating the surface of a substrate; depositing a silicon nitride film on the surface of the pretreated substrate using magnetron sputtering; depositing a DLC sample film on the surface of the silicon nitride film; bombarding the surface of the DLC sample film with an ion beam and performing plasma-enhanced chemical vapor deposition to deposit a low-stress DLC film on the surface of the silicon nitride film; and performing post-treatment on the low-stress DLC film. The technical solution of this invention enables the preparation of DLC films with low stress, thereby ensuring the stable quality of the DLC film and making it suitable for large-scale preparation.

The present application relates to a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes a step of forming a first film containing carbon over a silicon nitride film and a first conductive film; a step of forming a first silicon oxide film surrounding the first film, the first silicon oxide film being formed over the silicon nitride film and the first conductive film; a step of removing the first film to form a first opening exposing at least a part of the silicon nitride film and at least a part of the first conductive film in the first silicon oxide film; and a step of forming a second conductive film over the first conductive film in the first opening in contact with the first conductive film.

The invention discloses an IBC photovoltaic cell sintering and annealing method, and relates to the technical field of photovoltaic cell preparation, the method is applied to slurry sintering and light injection annealing integrated equipment, and the method specifically comprises the following steps: taking a metallized printed cell, and successively carrying out a drying operation, a sintering operation, a first light injection annealing operation and a second light injection annealing operation, the light injection annealing specifically comprises the step of simultaneously carrying out light injection and heat treatment. Compared with a traditional drying and sintering technology, the method has the advantages that the drying operation temperature and the sintering operation temperature are adjusted, the fine gate electrode slurry has better height and width after being sintered, the two-step light injection annealing operation is adopted, the overflow rate of hydrogen in Poly silicon, aluminum oxide and silicon nitride is reduced, stress caused by hydrogen overflow is reduced, and the yield of the fine gate electrode slurry is improved. Damage of stress of hydrogen overflow to aluminum oxide and silicon nitride film layers is reduced, and then the passivation performance and the photoelectric conversion efficiency of a photovoltaic cell are improved.

A low to moderate temperature vapor deposition process is provided for depositing silicon-based thin films, such as silicon nitride films, silicon carbon nitride films, silicon oxide films, and silicon films. The process includes heating a substrate to a predetermined temperature in a single cycle, providing a precursor containing a gas phase N-alkyl substituted perhydridocyclotrisilazane to a reaction zone containing the substrate to form a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and is converted to a discrete atomic or molecular layer of the silicon-based thin film by dissociation and / or decomposition induced by or from the substrate surface. The cycle is then repeated to form the silicon-based thin film to a desired thickness.

The application relates to the technical field of anti-dazzle glass, in particular to AG glass and a preparation method thereof.The preparation method of the AG glass comprises the following steps: 1) coating: performing coating treatment on one surface of a glass substrate, the film layer is silicon nitride, and a glass substrate with a silicon nitride film layer is prepared; 2) etching: etching the glass substrate with the silicon nitride film layer by using an etching liquid, the etching liquid contains acid, and the acid is hydrofluoric acid.The preparation method provided in the application can obtain AG glass products with high roughness on the basis of not using traditional chemical frosting liquid, and compared with a traditional chemical frosting process, the preparation method has the advantages of simple process, small environmental pollution and the like.

The application discloses a film layer structure with same reflectivity in a visible light band and a film coating process, the film layer structure comprises, in sequence, a PET substrate layer, a single crystal silicon film layer, a silicon nitride film layer, a silicon oxide film layer, and a niobium pentoxide layer is further coated outside the silicon oxide film layer, and the silicon nitride film layer is composed of three silicon nitride layers; the application further discloses a preparation method for preparing the film layer structure with same reflectivity in the visible light band, and the preparation method comprises the following steps: S1, single crystal silicon deposition; S2, deposition of a first silicon nitride layer; S3, deposition of a second silicon nitride layer; S4, deposition of a third silicon nitride layer; and S5, deposition of a silicon oxide film layer; the film layer structure provided by the application has the same reflectivity in the visible light band, the color index approaches 0, the film layer structure looks transparent and colorless, when the film material is pasted to a back cover, the film material structure cannot be obviously distinguished by naked eyes; the visual beauty of glass is maintained, and the effects of scratch prevention and drop prevention are achieved.

The invention provides a saturation treatment method of a quartz boat and a saturated quartz boat. The method comprises the following steps: cleaning and decontaminating a quartz boat to be treated; and depositing a boat saturation film layer on the surface of the cleaned to-be-treated quartz boat, wherein the boat saturation film layer comprises at least one silicon nitride film layer or at least one silicon oxynitride film layer or a combination of the silicon nitride film layer and the silicon oxynitride film layer. According to the saturated quartz boat provided by the embodiment of the invention, the boat saturated film layer deposited on the surface of the saturated quartz boat can effectively block the etching of HF, effectively protect the quartz boat body in the cleaning process and realize ultra-low loss, so that the overall service life of the quartz boat body is prolonged to more than two years, and the production tool cost is effectively reduced.

The invention discloses a TOPcon battery structure with ultrathin intrinsic amorphous silicon and a preparation method, and relates to the technical field of battery preparation, the battery structure comprises a silicon substrate, the front surface of the silicon substrate is sequentially laminated with an ultrathin intrinsic amorphous silicon layer, an aluminum oxide film layer and a first silicon nitride film layer from inside to outside, a tunneling oxide layer, a doped polycrystalline silicon layer and a second silicon nitride film layer are sequentially stacked on the back face of the silicon substrate from inside to outside, metal grid lines are arranged on the surface of the first silicon nitride film layer and the surface of the second silicon nitride film layer respectively, and the tunneling oxide layer is a silicon dioxide layer. According to the method, the ultrathin intrinsic amorphous silicon layer is introduced, the passivation and contact functions are achieved, the contact resistance can be reduced, the filling factor and efficiency can be improved, compared with the traditional technology, an amorphous silicon deposition procedure is added between RCA cleaning and ALD deposition, implementation is easy on the basis of an existing production line, and good application prospects are achieved.

The invention discloses a film system structure of a strong electromagnetic shielding thermal image window antireflection film in a severe marine environment. The film system structure comprises a germanium substrate and an antireflection film system plated on the surface of the germanium substrate, the antireflection film system sequentially comprises a germanium oxide film layer, a germanium film layer, a germanium oxide film layer, a silicon oxide film layer and a silicon nitride film layer from inside to outside. Germanium oxide is introduced into the first layer to serve as a transition layer, the problem of poor adhesive force caused by mismatching of crystal lattices and expansion coefficients between the germanium substrate and the high-strength thin film is solved, and a complex structure of a metal mesh on the surface of a germanium window is compatible; and silicon nitride is used as the outermost protective layer, so that the mechanical strength and marine environment erosion resistance of the film system are remarkably improved. The average reflectivity of the thermal imaging window is as low as 0.236% in the 3.7-4.8 [mu] m medium-wave infrared band, and the thermal imaging window can pass severe environment tests such as wind tunnels, sand dust, damp heat, salt mist, raining and temperature shock, and can meet the long-term use requirements of strong electromagnetic shielding thermal imaging windows in severe marine environments.

This invention discloses a selective metallization method and inkjet printing apparatus for photovoltaic cells, comprising the following steps: providing a substrate having a TOPCon structure on its back side, the TOPCon structure including a tunneling oxide layer, a doped polycrystalline silicon layer, and a silicon nitride film layer sequentially disposed from a silicon substrate to its surface; printing functional etching ink on a selected area of ​​the silicon nitride film layer; removing the silicon nitride film layer; and selectively retaining or removing the doped polycrystalline silicon layer and the tunneling oxide layer to form an opening area exposing the doped polycrystalline silicon layer or the silicon substrate; printing conductive ink containing base metal particles on the opening area and a preset conductive gate pattern; and sintering the printed substrate to form continuous conductive electrodes from the base metal particles and ohmic contacts with the exposed doped polycrystalline silicon layer or the silicon substrate. This invention uses inkjet printing to achieve metallized openings and base metal deposition, effectively avoiding thermal damage to the underlying material and significantly reducing metallization costs.

A TFT layer is provided that includes a stack of, in sequence, display wires, a protective film, a first flattening film, a metal wire layer and a second flattening film; further, a frame region has a first trench and a second trench respectively provided in the first flattening film and the second flattening film and overlapping the display wires; further, a second electrode is provided to cover the first trench and the second trench; further the protective film includes a first protective film and a third protective film formed of a silicon oxide film, and a second protective film formed of a silicon nitride film.