115 results about "Silicon nitride membrane" patented technology

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

Provided is a method for etching a silicon nitride film with high accuracy and high selectivity with respect to a silicon oxide film, while preventing deterioration of the shape of a silicon oxide film portion during etching. A dry etching method according to the present invention is used for etching a film structure that is formed in advance on a wafer disposed in a processing chamber, and that is configured such that an end portion of a film layer obtained by laminating a silicon nitride film so as to be vertically sandwiched by silicon oxide films constitutes a side wall of a groove or a hole, in a state in which a gas for processing is supplied into the processing chamber and no plasma is used, wherein: the method comprises (a) a step for reacting a hydrogen fluoride gas at a prescribed temperature to form a reaction layer on the silicon nitride film, (b) a step for channeling a gas of a polar solvent to process the reaction layer formed in step (a), and (c) a step for performing heating at a temperature higher than that in step (a) in a state in which no hydrogen fluoride gas is channeled and volatilizing the reaction layer formed in step (a) and processed in step (b) to remove the reaction layer; and steps (a) to (c) are repeated a plurality of times.

A substrate-treatment method includes (a) providing a substrate at a stage, the substrate including a silicon nitride-containing film, in which a recess defined by a top, a side wall, and a bottom is formed, and a silicon film exposed from the bottom of the recess; (b) forming a silicon oxide film along the recess; (c) exposing the silicon oxide film to a plasma of a process gas containing a hydrogen gas, thereby modifying the silicon oxide film at the top and bottom of the recess selectively relative to the side wall by an anisotropic plasma treatment; and (d) selectively removing the modified silicon oxide film at the top and bottom of the recess through chemical etching without using a plasma, thereby retaining the silicon oxide film at the side wall of the recess.

A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.

Provided is a method that allows for the etching of a silicon nitride film with respect to a silicon oxide film with high selectivity and high precision while preventing a degradation in the shape of the silicon oxide film portion during etching. The etching method of dry etching a film structure which is formed in advance on a wafer disposed in a processing chamber and in which an end portion of a film stack including a silicon nitride film and silicon oxide films vertically sandwiching the silicon nitride film forms a sidewall of a trench or hole, by supplying a gas for processing into the processing chamber, without using plasma includes: forming, as a first process, a reaction layer on the silicon nitride film by reaction of hydrogen fluoride gas at 30° C. or higher and 55° C. or lower; removing, thereafter, as a second process, the reaction layer having been formed in the first process, through volatilization by performing heating at 70° C. or higher and 110° C. or lower without causing the hydrogen fluoride gas to flow; and etching the silicon nitride film from the end portion in a lateral direction by performing the first and second processes a plurality of times.

A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.

The invention relates to the technical field of solar cells, and particularly discloses a method for improving UV attenuation of an N-type crystalline silicon solar cell and the N-type crystalline silicon solar cell. The method comprises the following steps: depositing an aluminum oxide film layer on the surface of N-type crystalline silicon; then, bombardment gas is adopted for conducting gas ionization bombardment treatment on the surface of the aluminum oxide film layer, and the bombardment gas is one or more combinations of laughing gas and rare gas and at least comprises laughing gas; and finally depositing a silicon nitride film layer. The laughing gas ionization bombardment can form a more compact aluminum nitride or aluminum oxynitride hydrogen blocking layer and release hydrogen, and the rare gas ionization bombardment can increase the negative charge density of the aluminum oxide film layer. Silicon nitride deposition, silk-screen printing, sintering and light injection processes do not need to be adjusted, no negative influence is caused on the short-circuit current and contact resistivity of the cell, the field passivation effect can be improved while the hydrogen passivation proportion is reduced, UV attenuation is effectively improved, and the full-life-cycle power generation amount of the cell is improved.

A silicon carbide semiconductor device includes an n-type epitaxial layer provided on a SiC substrate, a front surface electrode provided on the epitaxial layer, and a p-type electric field relieving region provided in the upper layer of the epitaxial layer in a terminal region. On the epitaxial layer, a first protective film composed of an interlayer insulating film and a protective oxide film that covers at least a part of the electric field relieving region is provided. A second protective film composed of a polyimide protective film is provided via a silicon nitride film so as to cover the outer end portion of the surface electrode, the first protective film, and at least a part of the epitaxial layer. The silicon nitride film protrudes from the second protective film at both an inner side end portion and an outer side end portion.

A substrate processing method according to the present disclosure comprises: a silicidation step in which a processing gas is supplied to a substrate that is provided with a recess in which the bottom wall is formed of a silicon-containing layer and the side wall is formed of a silicon nitride film, and a metal silicide film is formed on the surface of the silicon-containing layer; a nitriding step in which a nitriding gas is supplied to the substrate so as to nitride the surface of the metal silicide film and a first metal film that is formed on the side wall of the recess so as to cover the silicon nitride film in the silicidation step; an etching step in which an etching gas is supplied to the substrate so as to remove the first metal film; and a film formation step in which a film formation gas is supplied to the substrate so as to fill the recess with a second metal film.

The present invention specifically discloses a PECVD process for improving the film explosion of TOPCON batteries, comprising the following steps: (1) placing a graphite boat filled with silicon wafers in a furnace tube; (2) filling the furnace tube with nitrogen for protection; (3) performing step-by-step heating and constant-temperature hydrogen passivation treatment; (4) evacuating the furnace tube; (5) introducing NH3 and N2O into the furnace tube for ionization; (6) depositing silicon nitride; (7) evacuating the furnace tube and filling the furnace tube with nitrogen to return to atmospheric pressure; and (8) transporting the graphite boat out of the furnace tube. The present invention effectively reduces the film explosion rate of TOPCon batteries during the preparation process and improves the efficiency of the battery; in particular, by step-by-step heating and adding nitrous oxide and ammonia ionization before the silicon nitride film layer, N-H bonds are formed inside the film layer, thereby reducing hydrogen overflow and improving film explosion, thereby achieving a better hydrogen passivation effect.

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

The application discloses a two-dimensional metal organic framework nanopore sensor and a preparation method and application thereof. The two-dimensional metal organic framework nanopore sensor comprises a two-dimensional metal organic framework film with first nanopores, a silicon nitride film with second nanopores and a silicon substrate which are sequentially stacked, the two-dimensional metal organic framework film is formed through liquid-liquid interface force self-assembly and is transferred in situ to the silicon nitride film to form. The two-dimensional nanopore film material adopted by the application is a metal organic framework of a porphyrin organic ligand, the hydrophobic porphyrin ligand has high affinity with DNA molecules and can interact with the DNA molecules, so that the speed of the DNA passing through the two-dimensional nanopore is slowed down, the problem of fast pore passing speed when the two-dimensional nanopore sensor detects and distinguishes short-chain DNA is solved, and the time resolution capability of the two-dimensional nanopore is greatly improved under the premise of guaranteeing high spatial resolution of the two-dimensional nanopore.

A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left. In the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film and the second silicon oxide film are etched together.

The invention relates to a solar cell which comprises a passivation anti-reflection film structure, the passivation anti-reflection film structure comprises an aluminum oxide film and at least one layer of silicon nitride film which are sequentially laminated from inside to outside, the thickness of the aluminum oxide film is larger than or equal to 5 nm, a layer of first silicon nitride film exists in the silicon nitride film, and the refractive index of the first silicon nitride film is larger than or equal to 2.3; moreover, when the thickness of the aluminum oxide film is increased by 1 nm, the refractive index of the first silicon nitride film is increased by 0.03-0.06. According to the solar cell passivation anti-reflection film structure provided by the invention, the solar cell passivation interface loss caused by ultraviolet radiation can be improved, the attenuation rate of 50kWh ultraviolet radiation is less than 1%, the light radiation stability of the solar cell is greatly improved, and the photoelectric conversion efficiency of the solar cell is effectively guaranteed.

The invention relates to a preparation method of a perovskite-TOPCon laminated cell with local silver electrode interconnection, which comprises the following steps: by taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, boron diffusion, high-temperature oxidation, etching and polishing, thin film preparation (a tunneling oxide layer, a polycrystalline silicon layer and a silicon nitride film), and silk-screen printing and sintering to form a back metal electrode and a front local silver electrode interconnection layer; and preparing an ITO contact conductive layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, an ITO transparent conductive layer and a front metal electrode in sequence to obtain the perovskite-TOPCon laminated cell. According to the invention, the problems of back corrosion risk caused by corrosion of a front silicon nitride film with an HF solution, effective area loss caused by edge cutting, tedious process, poor passivation performance, low conversion efficiency and the like in existing perovskite-TOPCon laminated cell preparation are solved, full-size manufacturing is realized, the process is simplified, the performance is improved, and industrialization is facilitated.

A substrate processing method is a method of performing an etching process on a substrate with an etching solution in a processing tank. The substrate includes silicon oxide films and silicon nitride films stacked alternately. The etching solution contains phosphoric acid. The substrate processing method includes immersing the substrate in the etching solution, and replenishing the etching solution in the processing tank with phosphoric acid during the etching process on the substrate to cause a silicon concentration in the etching solution to vary.

The invention provides a method of forming a coated nanopore in a silicon nitride membrane on a silica substrate, comprising (i)Depositing layers of SiNx on opposing surfaces of a sheet of a silica substrate to form opposed SiNx membranes; followed by steps (ii-a) and (iii-a), or (ii-b) and (iii-b): (ii-a) Removing a portion of one of the SiNx membranes and a portion of the silica substrate to form a cavity in the silica substrate which is open on one side and bounded by the opposed membrane of SiNx on the other; (iii-a) Forming a nanopore aperture through the opposed membrane of SiNx, in the region of the cavity to form a continuous channel; or (ii-b) Forming a nanopore aperture through one of the membranes of SiNx; (iii-b) Removing a portion of the other SiNx membrane and a portion of the silica substrate in the region of the nanopore aperture to form a cavity in the silica substrate in the form of a continuous channel; wherein steps (ii-a) and (iii-a) or (ii-b) and (iii-b) are followed by steps (iv) and (v): (iv) Forming a layer of SiO2 on exposed surfaces, including the surface of the nanopore aperture formed in step (iii) and the substrate surfaces; (v) Modifying the layer formed in (iv) by chemical or physical means. Chips comprising nanopores obtainable by this method, and uses in nanomedicine and resistive pulse sensing methods, are also provided.

The present invention belongs to the technical field of back-contact batteries, and specifically relates to a combined passivation back-contact battery and a preparation method thereof, comprising the following steps: S4, depositing a mask layer on a first semiconductor layer, the mask layer comprising a doped amorphous layer and a silicon nitride film layer formed in sequence, wherein the doping element of the doped amorphous layer is N or C; S5, forming a second semiconductor opening region arranged at intervals; S6, performing texturing and cleaning, simultaneously forming a velvet surface on the front side of the silicon wafer and the second semiconductor opening region, and removing a portion of the mask layer; S7, sequentially depositing a passivation layer and an anti-reflection layer on the front side of the silicon wafer; S8, performing a secondary cleaning to remove the wrap-around coating naturally formed on the back side during S7, followed by backwashing; S9, depositing a second semiconductor layer on the back side obtained in S8. The present invention can completely remove the wrap-around coating layer on the back side, thereby improving the open circuit voltage and short circuit current of the battery, thereby improving the battery efficiency.

The present invention relates to a silicon oxide film etching liquid composition comprising hydrogen fluoride (HF), ammonium fluoride (NH4F), (C4-C20) alkylamine, an amine-based oligomeric compound, and an organic acid, the composition being capable of selectively etching a silicon oxide film while minimizing damage to metal and insulating films such as a silicon nitride film and a silicon oxyfluoride film.

A plasma processing method includes: (a) providing a substrate having an etching target film including a silicon oxide film and a silicon nitride film, and a mask film defining an opening over the etching target film, on a substrate support in a chamber of a plasma processing apparatus; (b) generating a first plasma from a first processing gas including HF gas, CxFy gas (x and y are integers of 1 or more) or CsHtFu gas (s, t, and u are integers of 1 or more), and an oxygen-containing gas to etch the silicon nitride film; and (c) generating a second plasma from a second processing gas including HF gas, CvFw gas (v and w are integers of 1 or more), and an oxygen-containing gas to etch the silicon oxide film. In (b) and (c), a temperature of the substrate support is set to 0° C. or lower.

A method of filling gaps with a flowable oxide film is provided. In one embodiment of the disclosure, the method includes forming a flowable silicon nitride film and then converting the silicon nitride film to a silicon oxide film. The silicon nitride film can be formed by supplying a power-activated oligomeric silicon source and a nitrogen source. The silicon nitride film can be converted to a silicon oxide film by supplying an oxygen source while applying vacuum UV radiation. The vacuum UV radiation can be applied in a pulsed mode.

Halosilyl-substituted cyclic silicon precursor compounds have a carbon-to-silicon ratio of at least 2: 1, and are defined by Formula I herein. A method of forming a film comprising silicon and oxygen and having a carbon content ranging from 10 at.% to 50 at.% by a thermal ALD process includes placing one or more substrates comprising surface features into a reactor; heating the reactor to one or more temperatures in the range of ambient temperature to about 600 DEG C and optionally maintaining the reactor at a pressure of 100 torr or less; introducing into the reactor at least one silicon precursor according to formula I; purging with inert gas; providing a nitrogen source into the reactor to react with the surface to form a carbon-doped silicon nitride film, purging with an inert gas to remove reaction by-products, repeating the steps to provide a carbon-doped silicon nitride film of a desired thickness, treating the resulting carbon-doped silicon nitride film with an oxygen source at one or more temperatures ranging from about ambient temperature to 1000 DEG C or from about 100 DEG C to 400 DEG C to convert the carbon-doped silicon nitride film to a carbon-doped silicon oxide film; and exposing the carbon-doped silicon oxide film to a plasma comprising hydrogen.

Provided is a polishing composition that can polish a carbon film at a high polishing removal rate, and can polish the carbon film at a high polishing removal rate with respect to a polishing removal rate of a silicon nitride film. A polishing composition, containing an anion-modified silica particle; a nonionic surfactant; and an anionic polymer, wherein a pH of the polishing composition is 1.0 or more and 5.0 or less.

To provide a semiconductor device that can suppress the degradation of its characteristics. [Solution] The semiconductor device comprises a semiconductor substrate, a source region and a drain region arranged with a gap between them on the upper surface of the semiconductor substrate, a body region arranged between the source region and the drain region, a drift region arranged between the body region and the drain region, a gate insulating film provided on the body region, a gate electrode provided on the gate insulating film, an insulating film provided on the drift region, a silicon oxynitride film provided on the insulating film, and a silicon nitride film provided on the silicon oxynitride film.

A method for selective plasma etching of silicon oxide relative to silicon nitride is described. The method includes providing a substrate containing a silicon oxide film and a silicon nitride film, and selectively etching the silicon oxide film relative to the silicon nitride film by: a1) exposing the substrate to a plasma-excited passivation gas containing carbon, sulfur, or both carbon and sulfur, wherein the plasma-excited passivation gas is free of fluorine or hydrogen, and b1) exposing the substrate to a plasma-excited etching gas containing a fluorine-containing gas. The method can further include an additional step a2) between a1) and b1): exposing the substrate to a plasma-excited additional passivation gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a hydrochlorocarbon gas, a hydrochlorofluorocarbon gas, or a hydrocarbon gas or a combination thereof.

The present invention discloses a silicon nitride film layer on the back of a battery, a PERC battery and a preparation method, belonging to the field of single-crystal PERC battery manufacturing. Aiming at the problems existing in the prior art, such as the low reflectivity of the back film of the battery, the low conversion efficiency of the battery, and the high temperature requirement, high energy consumption and high cost of the back film manufacturing process, the present invention provides a PERC battery. The battery includes a front silicon nitride film layer, a back aluminum oxide film layer and a back silicon nitride film layer. The back silicon nitride film layer has a five-layer structure. When manufacturing the battery, the back aluminum oxide film layer is deposited first, then the front silicon nitride film layer is deposited, and finally the back silicon nitride film layer is deposited. Using a low-temperature manufacturing process not only improves the photoelectric conversion efficiency of the battery chip and the performance of the single-crystal PERC battery product, but also reduces the energy consumption during the manufacturing process, shortens the manufacturing time, improves the production efficiency, and is suitable for wide application.

A solar cell. The solar cell comprises a passivation anti-reflection film structure (1), and the passivation anti-reflection film structure (1) comprises an aluminum oxide film (10) and at least one layer of silicon nitride film (20), which are sequentially arranged from inside to outside in a stacked manner, wherein the thickness of the aluminum oxide film (10) is greater than or equal to 5 nm; the silicon nitride film (20) comprises at least one first film (20a), and the refractive index of the first film (20a) is greater than or equal to 2.3; and when the thickness of the aluminum oxide film (10) is increased by 1 nm, the refractive index of the first film (20a) is increased by 0.03-0.06.

The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of:i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate; and ii) adsorbing a metal film precursor, metal oxide film precursor, metal nitride film precursor or silicon nitride film precursor on a surface of a substrate on which the growth inhibitor is adsorbed, wherein the growth inhibitor for forming a thin film is represented by Chemical Formula 1 below, and the metal is at least one selected from a group consisting of tungsten, cobalt, chrome, aluminum, hafnium, vanadium, niobium, germanium, lanthanide, actinoids, gallium, tantalum, zirconium, ruthenium, copper, titanium, is nickel, iridium and molybdenum.AnBmXo  [Chemical Formula 1]wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1.According to the present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film, even when the thin film is formed on a substrate having a complex structure.

This invention relates to the field of photomask technology, and in particular to a photomask with an isolation layer. The photomask includes a base layer, a pattern layer on top of the base layer, and an isolation layer on top of the pattern layer. The isolation layer includes a silicon nitride film layer, a diamond carbon film layer bonded to the top of the silicon nitride film layer, and a silicon oxide reflective film layer bonded to the top of the diamond carbon film layer. This invention significantly improves the corrosion resistance and high-temperature resistance of the photomask, providing more comprehensive and reliable protection for the pattern layer. It effectively resists various corrosive factors in the process environment, extends the service life of the photomask, and reduces production costs. By setting the silicon oxide reflective film layer, it can achieve efficient anti-reflection for light within the wavelength range of the photolithography light source, greatly reducing reflection loss and interference during light transmission, allowing the pattern to be transferred more accurately onto the base layer, meeting the requirements of high-precision photolithography processes.

This application relates to a solar cell and its fabrication method, a tandem solar cell, and a photovoltaic module. The fabrication method of the solar cell includes: providing a cell body and a conductive material; printing the conductive material onto the cell body; sintering and laser processing the cell body to form electrodes; wherein the conductive material includes silver powder, glass powder, and additives, and the additives include bismuth oxide or antimony oxide. The technical solution of this application has at least the following advantages: precise interface control: through a unique glass system design, "gentle yet effective" etching of the silicon nitride film is achieved. This ensures reliable ohmic contact formation while effectively protecting the underlying shallow junction n+ emitter, significantly reducing the parallel resistance (Rsh) and leakage current of the TOPCon cell, and improving the open-circuit voltage (Voc) and short-circuit current (Isc).