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1791 results about "Hydrogen content" patented technology

Barrier materials for display devices

Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g / cm3 or greater; a hydrogen content of about 4×1022 cm−3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.
Owner:VERSUM MATERIALS US LLC

Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing

Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of less than about 200° C. and is treated with helium plasma to reduce stress of the deposited layer to an absolute value of less than about 80 MPa. Plasma treatment reduces hydrogen content in the silicon oxide layer, and leads to low stress films that can also have high density and low roughness. In some embodiments, the film is deposited on a semiconductor substrate that contains one or more temperature-sensitive layers, such as layers of organic material or spin-on dielectric that cannot withstand temperatures of greater than 250° C. In some embodiments the silicon oxide film is deposited to a thickness of between about 100-200 Å, and is used as a hardmask layer during etching of other layers on a semiconductor substrate.
Owner:LAM RES CORP

Method of forming a thin film with a low hydrogen content on a semiconductor device

A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N2) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.
Owner:SAMSUNG ELECTRONICS CO LTD

Method of manufacturing a semiconductor device using a polymer film pattern

Claimed and disclosed is a method of manufacturing a semiconductor device, the method comprising the steps of forming a dummy gate on a semiconductor substrate, forming a source-drain diffusion region by introducing an impurity into the semiconductor substrate having the dummy gate as a mask, removing the dummy gate to form an opening, and forming a gate electrode within the opening with a gate insulating film formed below the gate electrode. The dummy gate is further formed by coating the semiconductor substrate with a polymer having a higher carbon content than hydrogen content so as to form a polymer film, forming a photoresist pattern on the polymer film, and transferring the pattern shape of the photoresist pattern onto the polymer film.
Owner:KK TOSHIBA

Solar cell and method of fabricating the same

A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.
Owner:SHIN ETSU CHEM IND CO LTD

Formation evaluation combination system for petrophysical well log analysis

A method of measuring characteristics of a geologic formation, using the time, energy and spatial spectra of gamma rays induced by an accelerator, which allows (i) the measurement of the photoelectric absorption (Pe) factor of the formation using a gamma-ray spectrum detected from gamma rays induced in the formation, (ii) the calculation of a neutron porosity of the formation using the gamma-ray spectrum, and (iii) the determination of a bulk density of the formation using the spectroscopic measurements. The Pe factor may be inferred by directly mapping the spectroscopic measurements. The porosity may be calculated by relating the gamma-ray spectrum to a hydrogen content of the formation. The density may be determined by computing a gamma diffusion length of the formation based on the gamma-ray spectrum. In addition to these measurements, the resistivity of the formation and its spontaneous potential may also be measured using an electromagnetic induction system.
Owner:PRECISION ENERGY SERVICES

Hydrogen production from an integrated electrolysis cell and hydrocarbon gasification reactor

An integrated process for hydrogen gas production includes:a. operating a water electrolysis cell with an external source of electricity to produce oxygen and hydrogen;b. optionally operating an air separation unit to produce additional oxygen for the process;c. introducing a hydrocarbon feedstock into a membrane wall gasification reactor with an ash-forming material and steam, and oxygen from the electrolysis cell and, optionally, oxygen from the air separation unit to produce hot raw synthesis gas;d. passing the hot raw synthesis gas from the gasification reactor to a steam-generating heat exchanger to produce steam and a cooled raw synthesis gas;e. introducing the steam generated in the heat exchanger into a turbine to produce electricity to operate the electrolysis cell; andf. recovering the hydrogen gas from the water electrolysis cell and, optionally, subjecting the synthesis gas to a water-gas shift reaction to increase the hydrogen content and recovering the hydrogen.
Owner:SAUDI ARABIAN OIL CO

Aluminum air fuel cell system

The invention relates to an aluminum air fuel cell system, and particularly relates to the aluminum air fuel cell system with a temperature control system, a hydrogen discharging system and a filtration system and having a circulating electrolyte. The system includes an electrolyte tank, a cell stack and a ventilation system; also includes an electrolyte supplied system, an electrolyte return system, the hydrogen discharging system, a temperature measurement system, the filtration system and a heat dissipation system. The system can realize circulation of the electrolyte, effectively separates precipitation, controls a hydrogen content and an internal temperature of cells, meets requirements of high power output and long time running, and can be widely applied to the field of power cells for electric vehicles and large standby power supplies.
Owner:CHONGQING WENNENG ENERGY SCI & TECH

Hydrogen-rich water and preparation method thereof

The invention relates to hydrogen-rich water and a preparation method thereof, and belongs to the field of food beverages. The hydrogen-rich water is prepared by the following steps: firstly introducing nitrogen into a closed pressure vessel, emptying the nitrogen, introducing hydrogen to 0.1-4 MPa, stirring for 10-30 minutes with the pressure being maintained at 0.1-4 MPa. After the hydrogen-rich water is filled, the hydrogen content within a shelf life of 12 months is 1.35-1.65 ppm; the redox potential is between -400 and -600 mV; and the elimination activity of active oxygen peroxide SOSA index is 7.0-9.0 units. The invention solves the problems that hydrogen is dissolved in water and does not precipitate; the prepared bottle-packed hydrogen-rich water finished product can be stored for a long time, is convenient for transportation and sale, can be drunk immediately when a bottle is opened; the preparation and filling methods of the hydrogen-rich water are simple and practical, do not consume a lot of equipment and energy, and has low cost.
Owner:CHENGDU LIST PHARMA

Quiescent transfer of melts

A quiescent melt handling system includes a holding furnace (2, 120, 320-720) for a molten metal melt. The holding furnace has a relatively large surface area and a relatively shallow depth, having a width to depth ratio in the range of 4-100 to 1. Also provided is structure (650-680) in the holding furnace for separating inclusions from the melt in the holding furnace. A quiescent transfer casting method includes melting a metal to form a melt and transferring the melt into a holding furnace. A hydrogen content in the melt is passively equilibrated with a dry atmosphere maintained in the holding furnace. Subsequently, the melt is withdrawn from the holding furnace.
Owner:ALOTECH LTD

Biogenic fuel gas generation in geologic hydrocarbon deposits

A method to stimulate the biogenic production of a metabolite with enhanced hydrogen content that includes forming an opening in a geologic formation to provide access to a consortium of microorganisms, and injecting water into the opening to disperse at least a portion of the consortium over a larger region of a hydrocarbon deposit. The method may also include measuring a change in the rate of production of the metabolite in the formation. Also, an method to stimulate biogenic production of a metabolite that includes measuring a salinity level of formation water in a geologic formation, and injecting water into the opening to reduce the salinity level of the formation water in the formation. The method may also include measuring a change in the rate of production of the metabolite in the formation.
Owner:TRANSWORLD TECH

Semiconductor integrated circuit device and process for manufacturing the same

In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.
Owner:RENESAS ELECTRONICS CORP

Oxide semiconductor device including insulating layer and display apparatus using the same

Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4 x 1021 atoms / cm3 or less, and the third insulating layer having a hydrogen content of more than 4 x 1021 atoms / cm3.
Owner:CANON KK
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