18499 results about "Nitrogen gas" patented technology

Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.

Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.

An apparatus, system, and method are disclosed for generating a gas. One or more liquid permeable pouches each define a cavity that contains a solid anhydrous reactant, such as a chemical hydride. A reaction chamber made of a heat, chemical and/or pressure resistant material receives the one or more pouches from a pouch feeder that transfers the one or more pouches into the reaction chamber successively at a feed rate. One or more liquid sources inject a liquid reactant into the reaction chamber so that the liquid reactant contacts a portion of the one or more pouches. The one or more liquid sources inject the liquid reactant at an injection rate that corresponds to the feed rate. A gas outlet releases a gas, such as hydrogen, oxygen, ammonia, borazine, nitrogen, or a hydrocarbon, that is produced by a reaction between the solid reactant and the liquid reactant.

Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

In a method of forming a layer using an atomic layer deposition process, after a substrate is loaded into a chamber, a reactant is provided onto the substrate to form a preliminary layer. Atoms in the preliminary layer are partially removed from the preliminary layer using plasma formed from an inert gas such as an argon gas, a xenon gas or a krypton gas, or an inactive gas such as an oxygen gas, a nitrogen gas or a nitrous oxide gas to form a desired layer. Processes for forming the desired layer may be simplified. A highly integrated semiconductor device having improved reliability may be economically manufactured so that time and costs required for the manufacturing of the semiconductor device may be reduced.

Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.

A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) is generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.

A combustion analyzer apparatus and method for combustion analysing a sample, the analyzer comprising a combustion chamber (82) for receiving a sample for combustion therein to form combustion products, and a fluid supply apparatus for supplying fluid(s) into the chamber. The fluid supply apparatus (130-140) comprises a nitrogen oxides (NO_x) generating apparatus (140,190,210,240) and is arranged to supply NO_x into the combustion chamber. A yield of sulphur dioxide in the combustion products may thereby be improved. The NO_x generating apparatus may be operated at a raised working temperature. The NO_x generating apparatus may be provided by an ozonator with a supply of nitrogen and oxygen. A Venturi tube arrangement (246) may draw the generated NO_x into a (carrier or oxygen) gas line to the combustion chamber. Ozone may be supplied to the combustion products to convert nitrogen monoxide therein to nitrogen dioxide. The NO_x and ozone may be supplied by a single device (210,240).

Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si—H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm².

The present invention relates to an ultraviolet ray generator 101, and the generator 101 has an ultraviolet ray lamp 1, a protective tube 2 being made of a material which is transparent with respect to ultraviolet ray and housing the ultraviolet ray lamp 1, and gas introduction port 6a introducing nitrogen gas or inert gas into the protective tube 2.

A method of depositing an oxide film on a template for patterning in semiconductor fabrication, includes: (i) providing a template having patterned structures thereon in a reaction space; and (ii) depositing an oxide film on the template by plasma-enhanced atomic layer deposition (PEALD) using nitrogen gas as a carrier gas and also as a dilution gas, thereby entirely covering with the oxide film an exposed top surface of the template and the patterned structures.

A plasma composition and its use in a method for the dry etching of a stack of at least one material chemically too reactive towards the use of a Cl-based plasma are provided. Small amounts of nitrogen (5% up to 10%) can be added to a BCl₃ comprising plasma and used in an anisotropical dry etching method whereby a passivation film is deposited onto the vertical sidewalls of stack etched for protecting the vertical sidewalls from lateral attack such that straight profiles can be obtained.

Microstructured optical fiber and method of making. Glass soot is deposited and then consolidated under conditions which are effective to trap a portion of the consolidation gases in the glass to thereby produce a non-periodic array of voids which may then be used to form a void containing cladding region in an optical fiber. Preferred void producing consolidation gases include nitrogen, argon, CO₂, oxygen, chlorine, CF₄, CO, SO₂ and mixtures thereof.

A phosphor with high efficiency having an excitation band corresponding to light of the ultraviolet-visible (300 to 550 nm) wavelength region emitted from a light emitting portion which emits blue or ultraviolet light is provided. A nitride of Ca, a nitride of Al, a nitride QfSi, and an oxide of Eu are prepared, and respective raw materials are weighed so that a mol ratio of respective elements becomes Ca:Al:Si:Eu=0.985:3:1:0.015, mixed under a nitrogen atmosphere, and thereafter fired at 1500° C. in a nitrogen atmosphere to thereby produce a phosphor having a composition formula Ca_0.985SiAlN₃:Eu0.015.

A CF8C type stainless steel alloy and articles formed therefrom containing about 18.0 weight percent to about 22.0 weight percent chromium and 11.0 weight percent to about 14.0 weight percent nickel; from about 0.05 weight percent to about 0.15 weight percent carbon; from about 2.0 weight percent to about 10.0 weight percent manganese; and from about 0.3 weight percent to about 1.5 weight percent niobium. The present alloys further include less than 0.15 weight percent sulfur which provides high temperature strength both in the matrix and at the grain boundaries without reducing ductility due to cracking along boundaries with continuous or nearly-continuous carbides. The disclosed alloys also have increased nitrogen solubility thereby enhancing strength at all temperatures because nitride precipitates or nitrogen porosity during casting are not observed. The solubility of nitrogen is dramatically enhanced by the presence of manganese, which also retains or improves the solubility of carbon thereby providing additional solid solution strengthening due to the presence of manganese and nitrogen, and combined carbon.

The preparation process of phenolic hydroxyl group-containing polyimide powder includes the following steps: 1. reaction of phenolic hydroxyl group-containing aromatic diamine compound or its mixture with other diamine compound and aromatic binary anhydride in the molar ratio of 1 to 1 in strong polar non-protonic organic solvent under protection of nitrogen at 0-30 deg.c for 3-12 hr to obtain transparent ropy polyhydroxy amido acid solution; and 2. adding azeotropic dewatering agent in nitrogen atmosphere and heating to 120-160 deg.c to reflux, azeotropically dewater and imidize for 5-18 hr, cooling to room temperature, washing and vacuum drying to obtain phenolic hydroxyl group-containing polyimide powder. The industrial production process has environment friendship, simple operation, low cost and easy solvent recovery.

The silicon etching apparatus using XeF2 includes: a basic structure composed of a loading chamber tot loading XeF2, an expansion chamber for collecting sublimated XeF2 gas, and an etching chamber for performing an etching process; and a means for injecting nitrogen prior to the etching process to eliminate air moisture in the apparatus and thus preventing the formation of HF. The silicon etching apparatus using XeF2 further includes: an injector having a predefined shape provided in the etching chamber for uniformly injecting the XeF2 gas downward on to surface of a wafer; a feedback controller for feedback controlling the internal pressure of the loading chamber in order to prevent sublimation of the residual XeF2 in the loading chamber; and a weight scale for measuring the weight of XeF2 in the loading chamber.

A method of hydraulically fracturing a hydrocarbon-bearing subterranean formation ensures that the conductivity of water inflow below the productive zone of the subterranean formation is reduced. The method consists of two principal steps. In the first step, a fracture in and below the productive zone of the formation is initiated by introducing into the subterranean formation a fluid, free of a proppant, such as salt water, fresh water, brine, liquid hydrocarbon, and/or nitrogen or other gases. The proppant-free fluid may further be weighted. In the second step, a proppant laden slurry is introduced into the subterranean formation which contains a relatively lightweight density proppant. Either the fluid density of the proppant-free fluid is greater than the fluid density of the proppant laden slurry or the viscosity of the proppant-free fluid is greater than the viscosity of the proppant laden slurry. The method limits undesirable fracture height growth in the hydrocarbon-bearing subterranean formation during the fracturing.

Disclosed herein is a method and system for separating carbon dioxide (CO₂) from a CO2 containing gas stream containing water vapor and additional impurities, for example, nitrogen, oxygen, sulfur oxides, nitrogen oxides, and mercury. The CO2 is captured by subjecting the CO₂ gas feed stream to a temperature swing adsorption step. The temperature swing adsorption step comprises an adsorption step for producing a substantially dry carbon dioxide-depleted stream, and an adsorbent regeneration step comprising heating the adsorbent bed to produce a substantially water vapor-free carbon dioxide stream. Moisture from the gas stream containing CO₂ is optionally removed by pressure swing adsorption, temperature swing adsorption, membrane separation, or absorption prior to CO₂ capture.

A power plant including an air separation unit (ASU) arranged to separate nitrogen, oxygen, carbon dioxide and argon from air and produce a stream of substantially pure liquid oxygen, nitrogen, carbon dioxide and argon; a steam generator, fired or unfired, arranged to combust a fuel, e.g., natural gas, liquefied natural gas, synthesis gas, coal, petroleum coke, biomass, municipal solid waste or any other gaseous, liquid or solid fuel in the presence of air and a quantity of substantially pure oxygen gas to produce an exhaust gas comprising water, carbon dioxide, carbon monoxide, nitrogen oxides, nitrogen, sulfur oxides and other trace gases, and a steam-turbine-generator to produce electricity, a primary gas heat exchanger unit for particulate/acid gas/moisture removal and a secondary heat exchanger arranged to cool the remainder of the exhaust gases from the steam generator. Exhaust gases are liquefied in the ASU thereby recovering carbon dioxide, nitrogen oxides, nitrogen, sulfur oxides, oxygen, and all other trace gases from the steam generator exhaust gas stream. The cooled gases are liquefied in the ASU and separated for sale or re-use in the power plant. Carbon dioxide liquid is transported from the plant for use in enhanced oil recovery or for other commercial use. Carbon dioxide removal is accomplished in the ASU by cryogenic separation of the gases, after directing the stream of liquid nitrogen from the air separation unit to the exhaust gas heat exchanger units to cool all of the exhaust gases including carbon dioxide, carbon monoxide, nitrogen oxides, nitrogen, oxygen, sulfur oxides, and other trace gases.

A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.

A process for purifying glycerin recovered as a byproduct of biodiesel production comprises heating a glycerin effluent stream containing a low molecular weight alcohol, water and fatty acid esters of the low molecular weight alcohol to cause transesterification of the fatty acid esters to glycerides and additional low molecular weight alcohol. The reaction mixture is sparged with nitrogen to help remove water and low molecular weight alcohol, which drives the transesterification reaction towards glyceride formation. A wash water stream may also be added to the recovered glycerin stream from biodiesel production. Either before or following the transesterification reaction, an oil layer can be separated from the recovered glycerin stream by reducing the pH of the stream to below 7. Following separation of the oil layer and transesterification the glycerin stream is flash distilled to separate glycerin from water, salts, and glycerides.

A semiconductor device comprising an insulation film covering a semiconductor chip so as to expose electrodes or pads fabricated in the chip and wiring lines located on the insulation film and connected to the respective electrodes or pads is produced by a method which comprises: providing a semiconductor chip provided with an insulation film covering the chip so as to expose a conductor layer for electrodes or pads fabricated in the chip, ion milling the surface of the chip provided with the insulation film by a mixed gas of argon and hydrogen, forming a patterned conductor layer for wiring lines on the ion-milled surface of the chip, and dry etching the surface of the chip provided with the insulation film and the patterned conductor layer by nitrogen gas.

Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

Methods for fractional catalytic pyrolysis which allow for conversion of biomass into a slate of desired products without the need for post-pyrolysis separation are described. The methods involve use of a fluid catalytic bed which is maintained at a suitable pyrolysis temperature. Biomass is added to the catalytic bed, preferably while entrained in a non-reactive gas such as nitrogen, causing the biomass to become pyrolyzed and forming the desired products in vapor and gas forms, allowing the desired products to be easily separated.

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In_xGa_1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the In_xGa_1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

A method for the separation of a feed gas mixture comprising oxygen and nitrogen in which an oxidant gas and fuel are combusted in a combustion engine to generate shaft work and a hot exhaust gas, the feed gas mixture comprising oxygen and nitrogen is compressed, and the resulting compressed feed gas mixture is separated into two or more product gas streams with differing compositions. The shaft work of the combustion engine is utilized to provide at least a portion of the work required for compressing the feed gas mixture, one of the product gas streams by is heated by indirect heat exchange with the hot exhaust gas from the combustion engine, and the resulting heated product gas is work expanded to generate shaft work and yield an expanded product gas stream. The combustion engine may be a gas turbine combustion engine.

A method for the production of liquefied natural gas (“LNG”) and nitrogen is provided. The method may include the steps of: a) providing a nitrogen production facility, wherein nitrogen production facility comprises: a main heat exchanger, an air separation unit, a nitrogen recycle compressor, a first nitrogen refrigeration supply configured to provide refrigeration to the main heat exchanger for cooling a main air feed, b) providing a secondary refrigeration supply; c) liquefying a natural gas stream using refrigeration from the secondary refrigeration supply to form an LNG product stream; wherein the secondary refrigeration supply is configured to compress and expand a refrigerant to produce refrigeration, wherein the refrigerant of the secondary refrigeration supply is shared with refrigerant of the first nitrogen refrigeration supply

The invention discloses a device and method for preparing nitrogen foam cement. The preparing device comprises a foam cement producer, a liquid nitrogen evaporator, a liquid nitrogen plunger pump, a foam liquid plunger pump, a foam liquid tank, a heat exchange system, a liquid nitrogen pipeline, a high-pressure cement paste pipeline, a first pipeline, a foam cement discharge pipeline and a densitydetecting device. The heat generated by a power unit, a hydraulic system and other devices in a nitrogen foam well fixing device is recovered through the heat exchange system, the recovered heat is used as a heat source of the liquid nitrogen evaporator, energy conservation and environment protection are realized, the energy utilization rate is high, and equipment input is low. Liquid nitrogen and foam liquid are pressurized through a high-pressure liquid nitrogen plunger pump and a high-pressure foam liquid plunger pump, the mixing uniformity is increased, and the density of foam cement is reduced. The density of the foam cement is detected in real time through the density detecting device, the flow of the liquid nitrogen and/or foam liquid is adjusted according to the density, and the density is simply controlled. By arranging a clear water tank, after operation ends, the equipment and pipelines are flushed, and the service life is polonged.

The present invention relates to an enhanced oil recovery process that is integrated with a synthesis gas generation process, such as gasification or reforming, and an air separation process for generating (i) an oxygen stream for use, for example, in the syngas process or a combustion process, and (ii) a nitrogen stream for EOR use.