134results about How to "Reduce symmetry" patented technology

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and / or hydrogen and / or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

The invention discloses a micro-hemispherical resonant gyroscope based on borosilicate glass annealing forming and a manufacturing method thereof. A silicon wafer serves as a substrate to form a silicon substrate. A cylindrical cavity and a center supporting column in the circle center of the cavity are etched on the upper surface of the silicon wafer. The center supporting column is connected with the center of a hemispherical harmonic oscillator to form a suspended structure. Meanwhile, eight flat-plate electrodes are evenly distributed around the hemispherical harmonic oscillator and on the periphery of the cylindrical cavity of the upper surface of the silicon wafer. The eight flat-plate electrodes are composed of four drive electrodes and four detection electrodes, all the drive electrodes, the detection electrodes and the hemispherical harmonic oscillator are not in contact and have same gaps, and the drive electrodes and the detection electrodes are sequentially distributed at intervals. The glass metal blowing type micro-hemispherical resonant gyroscope manufactured through the method has stable performance and a wider application range because of the advantages of being simple in structure, low in surface stress, high in symmetry and the like.