Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same

Abstract

The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one β-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.

Description

BACKGROUND [0001] The scaling down of integrated circuit devices has created a need to incorporate high dielectric constant materials into capacitors and gates. The search for new high dielectric constant materials and processes is becoming more important as the minimum size for current technology is practically constrained by the use of standard dielectric materials. Dielectric materials containing alkaline earth metals can provide a significant advantage in capacitance compared to conventional dielectric materials. For example, the perovskite material SrTiO3 has a disclosed bulk dielectric constant of up to 500. [0002] Unfortunately, the successful integration of alkaline earth metals into vapor deposition processes has proven to be difficult. For example, although atomic layer deposition (ALD) of alkaline earth metal diketonates has been disclosed, these metal diketonates have low volatility, which typically requires that they be dissolved in organic solvent for use in a liquid i...

AI Technical Summary

Benefits of technology

The present invention provides metal-containing compounds that have reduced symmetry compared to known homoleptic complexes with symmetrical ligands. This reduced symmetry may result from the unsymmetrical β-diketiminate ligands, the coordination of different types of ligands, or both. The reduced symmetry compounds have desirable properties for use in vapor deposition methods, such as higher vapor pressure, lower melting point, and lower sublimation point. The invention also provides methods of making and using the metal-containing compounds.

Problems solved by technology

Unfortunately, the successful integration of alkaline earth metals into vapor deposition processes has proven to be difficult.

In addition to low volatility, these metal diketonates generally have poor reactivity, often requiring high substrate temperatures and strong oxidizers to grow a film, which is often contaminated with carbon.

Other alkaline earth metal sources, such as those including substituted or unsubstituted cyclopentadienyl ligands, typically have poor volatility as well as low thermal stability, leading to undesirable pyrolysis on the substrate surface.

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